CN116334562A - Preparation method of agate color coating - Google Patents

Preparation method of agate color coating Download PDF

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Publication number
CN116334562A
CN116334562A CN202310375052.6A CN202310375052A CN116334562A CN 116334562 A CN116334562 A CN 116334562A CN 202310375052 A CN202310375052 A CN 202310375052A CN 116334562 A CN116334562 A CN 116334562A
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Prior art keywords
coating
layer
agate
target
targets
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赵明华
汪达文
洪胜
汪经纬
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Shenzhen Senfung Vacuum Plating Co ltd
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Shenzhen Senfung Vacuum Plating Co ltd
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Priority to CN202310375052.6A priority Critical patent/CN116334562A/en
Publication of CN116334562A publication Critical patent/CN116334562A/en
Priority to CN202410151378.5A priority patent/CN117778947A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0015—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to a preparation method of an agate color coating, which comprises the following steps: s1, depositing a transition layer on a substrate material by adopting a vacuum magnetron sputtering mode; s2, depositing an intermediate layer on the transition layer by adopting a magnetron sputtering mode; and S3, depositing and generating an agate coating (TiAlSiN layer) by adopting a magnetron sputtering mode. In the step S3, the sputtering power of the Si target is controlled so that the percentage of Si element in the deposited agate coating (TiAlSiN layer) is 7% -8%. The invention obtains a special agate coating with high hardness and wear resistance.

Description

Preparation method of agate color coating
Technical Field
The invention relates to the technical field of PVD sputtering, in particular to a preparation method of an agate color coating.
Background
Physical vapor deposition (Physical Vapor Deposition, PVD) is a thin film fabrication technique that physically deposits a material on a workpiece to be plated under vacuum conditions, and is widely used in surface treatment and thin film fabrication. Magnetron sputtering is one of PVD, and a general sputtering method can be used for preparing multiple materials such as metal, semiconductor, insulator and the like, and has the advantages of simple equipment, easiness in control, large coating area, strong adhesive force and the like.
The color types of the coating on the market at present can not meet all customer requirements, and some coating with gorgeous colors can not be produced.
Thus, there is a need in the art for improvements.
Disclosure of Invention
The invention provides a preparation method of an agate coating, which solves the problem that no agate coating exists in the market, and has better hardness and wear resistance than other color film systems.
The invention provides a preparation method of an agate color coating, which adopts the following technical method:
a method for preparing an agate coating comprises the following steps,
s1, depositing a transition layer on a substrate material by adopting a magnetron sputtering mode;
s2, depositing an intermediate layer on the transition layer by adopting a magnetron sputtering mode;
s3, depositing and generating an agate coating (TiAlSiN layer) by adopting a magnetron sputtering mode;
in the step S3, the sputtering power of the Si target is controlled so that the percentage of Si element in the deposited agate coating (TiAlSiN layer) is 7% -8%.
Preferably, in step S1, the method specifically includes the following steps: ar is introduced into the coating chamber until the air pressure reaches 0.3-0.5 Pa, the bias voltage is set to-50 Pa, the target is opened, and the transition layer is deposited.
Preferably, in step S2, the method specifically includes the following steps:
s21, introducing reaction gas N into the film coating chamber 2 Adjusting the air pressure to be 0.40-0.44 Pa, and simultaneously starting a Ti target and an Al target to obtain an intermediate layer (TiAlN layer);
s22, continuously introducing reaction gas N into the coating chamber 2 Adjusting the air pressure to be 0.40-0.44 Pa, and simultaneously starting a Ti target and an Al target to obtain a compact intermediate layer (TiAlN layer);
preferably, in step S3, the method specifically includes the following steps: and (3) introducing a reaction gas N2 into the coating chamber, adjusting the air pressure to be 0.46-0.50 Pa, and simultaneously starting a Ti target, an Al target and a Si target to obtain an agate color coating (TiAlSiN layer).
Preferably, in step S1, a pair of Ti targets, a pair of Al targets and a pair of Si targets are disposed in the plating chamber, the Ti targets and the Si targets being disposed in a pair of targets at one end of the plating chamber, and the Al targets being disposed in a pair of targets at the other end of the plating chamber.
Preferably, before the transition layer is deposited on the surface of the substrate material in step S1, the substrate material is subjected to a cleaning pretreatment.
Preferably, the cleaning pretreatment comprises the following steps: firstly, ultrasonic cleaning is carried out on a substrate material, then, vacuumizing and heating treatment are carried out on a coating chamber, ar is introduced into the coating chamber when the air pressure in the coating chamber is 0.001Pa, and ion cleaning is carried out on the substrate material when the air pressure reaches-2-0 Pa and the bias voltage is set to-300V.
Preferably, in step S11, the ion cleaning of the substrate material is performed by arc bombardment cleaning.
Preferably, in step S12, a pure Ti layer is used as the transition layer.
The beneficial effects are that:
the invention adopts magnetron sputtering technology to prepare agate color coating (TiAlSiN layer), firstly adopts ultrasonic cleaning to the substrate material to clean the pollutant on the surface of the substrate material, improves the adhesive force between the transition layer (Ti layer) and the substrate material, ensures that the TiAlSiN layer can be better deposited on the substrate material, and further carries out arc bombardment cleaning to the substrate material to further enhance the adhesive force between the substrate material and the transition layer (Ti layer), increases the microscopic roughness of the substrate material, thoroughly exposes the surface atoms of the substrate material, improves the polarization rate of the atoms and ensures that the bonding between the substrate material and the transition layer (Ti layer) is more compact; according to the invention, the intermediate layer (TiAlN layer) is further deposited on the transition layer, so that the bonding force between the agate color coating (TiAlSiN layer) and the transition layer (Ti layer) can be enhanced, and the agate color coating (TiAlSiN layer) can be better deposited on the substrate material; meanwhile, the invention adjusts the proportion of each element in the agate color coating (TiAlSiN layer), increases the content of silicon element, and enhances the wear resistance of the agate color coating (TiAlSiN layer).
Drawings
FIG. 1 is a schematic illustration of a 48 hour abrasion resistance test for a product according to an embodiment of the present invention;
FIG. 2 is a schematic view of another angle of the product obtained in the example of the present invention after 48 hours of abrasion resistance test;
FIG. 3 is a schematic representation of the product of the comparative example of the present invention after 48 hours of abrasion resistance testing;
FIG. 4 is a schematic view of another angle of the product of the comparative example of the present invention after 48 hours of abrasion resistance test.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. It is to be understood that the following description is intended to be illustrative of the invention and not restrictive.
The terms "comprising," "including," "having," "containing," or any other variation thereof, as used herein, are intended to cover a non-exclusive inclusion. For example, a composition, step, method, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such composition, step, method, article, or apparatus.
When an equivalent, concentration, or other value or parameter is expressed as a range, preferred range, or a range bounded by a list of upper preferable values and lower preferable values, this is to be understood as specifically disclosing all ranges formed from any pair of any upper range limit or preferred value and any lower range limit or preferred value, regardless of whether ranges are separately disclosed. For example, when ranges of "1 to 5" are disclosed, the described ranges should be construed to include ranges of "1 to 4", "1 to 3", "1 to 2 and 4 to 5", "1 to 3 and 5", and the like. When a numerical range is described herein, unless otherwise indicated, the range is intended to include its endpoints and all integers and fractions within the range.
The technical features of the respective embodiments of the present invention may be combined with each other as long as they do not collide with each other.
In one embodiment of the present invention, there is provided a method for preparing an agate color coating, comprising the steps of:
s1, depositing a transition layer on a substrate material by adopting a magnetron sputtering mode;
s2, depositing an intermediate layer on the transition layer by adopting a magnetron sputtering mode;
s3, depositing and generating an agate coating (TiAlSiN layer) by adopting a magnetron sputtering mode;
in the step S3, the sputtering power of the Si target is controlled so that the percentage of Si element in the deposited agate coating (TiAlSiN layer) is 7% -8%.
By adopting the technical scheme, the invention adopts the magnetron sputtering technology to deposit the agate color coating (TiAlSiN layer) on the substrate material, the magnetron sputtering instrument in the technology can emit electrons and apply an electric field to the electrons, and Ar and N are introduced into the coating chamber 2 The argon atoms and electrons collide under the action of an electric field to ionize a large amount of argon ions, the argon ions bombard the Ti target, the Al target and the Si target in the magnetron sputtering coating machine in an accelerating way under the action of the electric field to sputter a large amount of titanium atoms, aluminum atoms and silicon atoms, meanwhile, nitrogen molecules collide with the electrons under the action of the electric field to ionize a large amount of nitrogen atoms, and the titanium atoms, the aluminum atoms, the silicon atoms and the nitrogen atoms are deposited on a substrate material to finish coating.
Meanwhile, the proportion of each element in the agate color coating (TiAlSiN layer) is changed, the content of silicon element is increased to 7% -8%, and a covalent bond can be formed between silicon atoms and nitrogen atom junctions to form a large amount of Si-N-Si hard grid structures, so that the wear resistance of the coating is greatly enhanced.
Preferably, in step S1, the method specifically includes the following steps: ar is introduced into the coating chamber until the air pressure reaches 0.3-0.5 Pa, the bias voltage is set to-50 Pa, the target is opened, and the transition layer is deposited.
By adopting the technical scheme, argon is firstly introduced into the film coating chamber, high-energy argon ions are generated through glow discharge of the argon, and the high-energy argon ions bombard the substrate material at a high speed under the action of a magnetic field, so that attachments adhered to the surface of the substrate material are cleaned. In addition, the invention also deposits the transition layer between coating and base material, make agate color coating (TiAlSiN layer) deposit on base material better, improve the deposition quality of the coating.
Preferably, in step S2, the method specifically includes the following steps:
s21, introducing reaction gas N into the film coating chamber 2 Adjusting the air pressure to be 0.40-0.44 Pa, and simultaneously starting a Ti target and an Al target to obtain an intermediate layer (TiAlN layer);
s22, continuously introducing reaction gas N into the coating chamber 2 And adjusting the air pressure to be 0.40-0.44 Pa, and simultaneously starting the Ti target and the Al target to obtain a compact intermediate layer (TiAlN layer).
By adopting the technical scheme, the invention further deposits the intermediate layer (TiAlN layer) between the transition layer (pure Ti layer) and the agate coating (TiAlSiN layer), and the arrangement of the intermediate layer can effectively relieve contradictions of insufficient coating binding force and the like caused by unmatched physical properties such as elastic modulus and the like between the coatings and improve the interlayer binding force.
Preferably, in step S3, the method specifically includes the following steps: introducing reaction gas N into the film coating chamber 2 And (3) adjusting the air pressure to be 0.46-0.50 Pa, and simultaneously starting a Ti target, an Al target and a Si target to obtain an agate color coating (TiAlSiN layer).
By adopting the technical scheme, under the deposition condition, the deposited TiAlSiN layer has ultrahigh hardness and wear resistance, improves the quality of the coating, and prolongs the service life of the coating product.
Preferably, in step S1, a pair of Ti targets, a pair of Al targets and a pair of Si targets are disposed in the plating chamber, the Ti targets and the Si targets being disposed in a pair of targets at one end of the plating chamber, and the Al targets being disposed in a pair of targets at the other end of the plating chamber.
By adopting the technical scheme, three pairs of targets are placed according to specific positions, so that an intermediate layer (TiAlN layer) can be well deposited, a coating deposited on the surface of a substrate material is stable in color, uniform in film thickness and stable in optical effect.
Preferably, before the transition layer is deposited on the surface of the substrate material in step S1, the substrate material is subjected to a cleaning pretreatment.
By adopting the technical scheme, the substrate material is also subjected to cleaning pretreatment before coating so as to improve the quality of coating, thereby destroying the adsorption of pollutants and the surface of the workpiece, leading the pollutants to be stripped from the surface of the workpiece, completing the cleaning of the workpiece and improving the coating effect on the workpiece.
Preferably, the cleaning pretreatment comprises the following steps: firstly, ultrasonic cleaning is carried out on a substrate material, then, vacuumizing and heating treatment are carried out on a coating chamber, ar is introduced into the coating chamber when the air pressure in the coating chamber is 0.001Pa, and ion cleaning is carried out on the substrate material when the air pressure reaches-2-0 Pa and the bias voltage is set to-300V.
By adopting the technical scheme, the ultrasonic cleaning machine in the technology can convert the sound energy of a power ultrasonic frequency source into mechanical vibration, the ultrasonic cleaning machine irradiates ultrasonic waves to the cleaning liquid in the tank through the cleaning tank wall, and the cleaning liquid in the tank generates micro bubbles and keeps vibrating due to the irradiation of the ultrasonic waves, so that the absorption of pollutants and the surface of a workpiece is destroyed, the pollutants are peeled off from the surface of the workpiece, the cleaning of the workpiece is completed, and in order to further clean the substrate, the ion cleaning is also carried out on the substrate.
Preferably, in step S11, the ion cleaning of the substrate material is performed by arc bombardment cleaning.
By adopting the technical scheme, the arc bombardment cleaning is also carried out on the substrate material, the high-voltage electric field is applied to the gas in the coating chamber, so that the gas ion beam bombards the substrate material, the bombardment energy of the gas ion beam can be transmitted to lattice atoms of the substrate material, the lattice structure of the substrate material is damaged, the microscopic roughness of the substrate material is increased, the surface atoms of the substrate material are thoroughly exposed, the polarizability of the atoms is improved, the distance between the transition layer and the surface atoms of the substrate material is reduced when the substrate material is coated, the contact area between the transition layer and the surface of the substrate material is increased, and the mechanical locking force between the transition layer and the surface of the substrate material is obviously enhanced, so that the prepared TiAlSiN layer can be deposited on the surface of the substrate material better.
Preferably, in step S12, a pure Ti layer is used as the transition layer.
By adopting the technical scheme, the pure Ti layer is adopted as the transition layer between the substrate material and the TiAlSiN layer, ti can reduce residual stress between the substrate material and the coating, and enhance the binding force between the TiAlSiN layer and the substrate material, so that the TiAlSiN layer can be more tightly deposited on the substrate material, and the deposition effect is further improved.
Examples
A method for preparing an agate color coating, comprising the following steps:
cleaning pretreatment: firstly, adopting a mixed solution of potassium permanganate and hydrogen peroxide as cleaning liquid, putting a substrate material to be coated into an ultrasonic cleaner for cleaning for 20min,
s1, firstly adopting an oil removal and wax removal solution as a cleaning liquid, putting a substrate material to be coated into an ultrasonic cleaner for cleaning for 20min, putting a Ti target and a Si target at one end of a coating chamber in a target-to-target mode, putting an Al target at the other end of the coating chamber far away from the Ti target and the Si target in a target-to-target mode, vacuumizing the coating chamber by using an air extractor until the air pressure reaches 0.001Pa, heating the coating chamber, and keeping the temperature at 150 ℃; then argon is introduced into the film plating chamber, so that when the air pressure reaches 0.4Pa, the bias voltage parameter is set to be 300V, then an intermediate frequency film plating power supply is started, the current parameter of a Ti target is set to be 30A, and the substrate material is sputtered for 20min, so that a transition layer (pure Ti layer) is obtained;
s2, introducing N into the film plating chamber 2 When the air pressure is regulated to be stable at 0.42Pa, simultaneously starting a Ti target and an Al target, setting the current parameter of the Ti target to be 30A and the current parameter of the Al target to be 15A, and depositing a substrate material for 20min to obtain an intermediate layer (TiAlN layer); continuing to introduce N into the film plating chamber 2 And regulating the air pressure to be stable and then 0.45-Pa, and depositing the substrate material for 30min to obtain a compact intermediate layer (TiAlN layer).
S3, continuously introducing N into the coating chamber 2 When the air pressure is regulated to be stable at 0.42Pa, regulating the air pressure to be stable at 0.48Pa, and simultaneously starting a Ti target, an Al target and a Si target, wherein the current parameter of the Ti target is set to 10A, the current parameter of the Al target is set to 15A, the current parameter of the Si target is set to 20A, depositing a substrate material for 42min to obtain an agate coating (TiAlSiN layer), and ending film plating; wherein, the percentage of Si element in the TiAlSiN layer is controlled to be 7% -8%, and the percentage of Si element in the prepared TiAlSiN layer is controlled to be 7.6%.
Comparative example
The difference from the examples is that: a magnetron sputtering technique is used to deposit a TiON film system (TiAlON coating) on the substrate material.
Performance test
The coated products prepared in examples and comparative examples were tested for abrasion resistance according to the ISO23160 standard.
The testing method comprises the following steps: putting a grinding stone with the volume of 4L into a cleaned vibration disc, slowly adding 24ml of grinding fluid into the vibration disc, starting the vibration disc, after the grinding fluid is uniformly distributed on the vibration disc, slowly adding 800ml of clear water, after a small amount of grinding fluid foam is kept around a central cylinder of the vibration disc, putting a product to be tested into the vibration disc, and testing for 24 hours and 48 hours.
Test results: the product prepared by the embodiment can be tested for 48 hours, and the surface coating of the product is not peeled off; the product prepared by the comparative example can pass the 24-hour test and can not pass the 48-hour test, and after 48 hours, the surface coating of the product is subject to falling off.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes using the descriptions and drawings of the present invention or directly or indirectly applied to other related technical fields are included in the scope of the invention.

Claims (9)

1. A method for preparing an agate coating comprises the following steps,
s1, depositing a transition layer on a substrate material by adopting a magnetron sputtering mode;
s2, depositing an intermediate layer on the transition layer by adopting a magnetron sputtering mode;
s3, depositing and generating an agate coating (TiAlSiN layer) by adopting a magnetron sputtering mode;
the method is characterized in that in the step S3, the sputtering power of the Si target is controlled so that the percentage of Si element in the deposited agate color coating (TiAlSiN layer) is 7% -8%.
2. The method for preparing an agate coating according to claim 1, wherein in step S1, the method specifically comprises the following steps: ar is introduced into the coating chamber until the air pressure reaches 0.3-0.5 Pa, the bias voltage is set to-50 Pa, the target is opened, and the transition layer is deposited.
3. The method for preparing an agate coating according to claim 1, wherein in step S2, the method specifically comprises the following steps:
s21, introducing reaction gas N into the film coating chamber 2 Adjusting the air pressure to be 0.40-0.44 Pa, and simultaneously starting a Ti target and an Al target to obtain an intermediate layer (TiAlN layer);
s22, continuously introducing reaction gas N into the coating chamber 2 And adjusting the air pressure to be 0.40-0.44 Pa, starting the Ti target and the Al target at the same time, and depositing for a long time to obtain a compact intermediate layer (TiAlN layer).
4. The method for preparing an agate coating according to claim 1, wherein in step S3, the method specifically comprises the following steps: introducing reaction gas N into the film coating chamber 2 And (3) adjusting the air pressure to be 0.46-0.50 Pa, and simultaneously starting a Ti target, an Al target and a Si target to obtain an agate color coating (TiAlSiN layer).
5. The method for preparing an agate coating according to claim 1, wherein in the step S1, a pair of Ti targets, a pair of Al targets and a pair of Si targets are disposed in the coating chamber, the Ti targets and the Si targets are disposed in a form of a pair of targets at one end of the coating chamber, and the Al targets are disposed in a form of a pair of targets at the other end of the coating chamber.
6. The method for preparing an agate coating according to claim 1, wherein the substrate is subjected to a cleaning pretreatment before the transition layer is deposited on the surface of the substrate in step S1.
7. The method for preparing an agate color coating according to claim 6, wherein the cleaning pretreatment comprises the steps of: firstly, ultrasonic cleaning is carried out on a substrate material, then, vacuumizing and heating treatment are carried out on a coating chamber, ar is introduced into the coating chamber when the air pressure in the coating chamber is 0.001Pa, and ion cleaning is carried out on the substrate material when the air pressure reaches-2-0 Pa and the bias voltage is set to-300V.
8. The method of preparing an agate coating according to claim 2, wherein in step S11, the ion cleaning of the substrate material is performed by arc bombardment cleaning.
9. The method of claim 1, wherein in step S12, a pure Ti layer is used as the transition layer.
CN202310375052.6A 2023-04-10 2023-04-10 Preparation method of agate color coating Withdrawn CN116334562A (en)

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