CN116333729A

CN116333729A - Luminescent material and luminescent device comprising same

Info

Publication number: CN116333729A
Application number: CN202310057455.6A
Authority: CN
Inventors: 刘荣辉; 段谟斌; 刘元红; 薛原; 马小乐; 陈晓霞
Original assignee: Hebei Xiongan Rare Earth Functional Material Innovation Center Co ltd; Grirem Advanced Materials Co Ltd; Grirem Hi Tech Co Ltd
Current assignee: Hebei Xiongan Rare Earth Functional Material Innovation Center Co ltd; Grirem Advanced Materials Co Ltd; Grirem Hi Tech Co Ltd
Priority date: 2022-01-28
Filing date: 2023-01-17
Publication date: 2023-06-27

Abstract

Embodiments of the present invention relate to a light emitting material including an inorganic compound having a structure similar to SrAl and a light emitting device including the same ₂ Si ₂ O ₈ The same crystal structure ensures that the absorption efficiency of the doped element in the excitation wavelength range is obviously improved by selecting the element types, the element contents, the doping proportion and the like contained in the inorganic compound, and the improvement of the emission intensity and the external quantum efficiency is promoted, so that the luminous intensity of the luminescent material is obviously improved. The luminescent material provided by the embodiment of the invention is matched with the corresponding light source and luminescent material, so that the luminescent device can emit light with high luminous efficiency and high color rendering, and the color gamut of the luminescent device can be effectively improved, thereby meeting the application requirements in the fields of ultra-high color gamut liquid crystal display backlight sources and the likeThe requirement is that.

Description

Luminescent material and luminescent device comprising same

Technical Field

The embodiment of the invention relates to the technical field of luminescent materials, in particular to a luminescent material and a luminescent device containing the luminescent material.

Background

With the continuous development of information technology, flat panel display devices are increasingly developed toward light weight, high resolution, high color saturation, and the like. The liquid crystal display is still the mainstream flat panel display technology at present because of the advantages of stable performance, lower energy consumption, longer service life and the like. As one of the key technologies of LCD, the selection of backlight source plays a critical role in improving the display color gamut, such as image definition and color saturation. Compared with multi-chip composite, the white light LED with single chip combined with one or more fluorescent powder has the characteristics of long service life, small light attenuation, low cost, stable light color and the like, gradually replaces the cold cathode ray tube and other technologies of the traditional LCD backlight source, and becomes a main stream backlight source in the field of liquid crystal display. At present, the fluorescent conversion type white light LED mainly has the following three implementation modes, wherein the blue light LED chip is matched with the combination mode of red fluorescent powder and green fluorescent powder, and the types and the proportions of the red fluorescent powder and the green fluorescent powder can be regulated and controlled to meet the light source requirements of various application scenes, so that the blue light LED chip gradually develops into the mainstream LED white light implementation mode.

Color gamut (color gamut) is one of the main parameters evaluating display devices, and is represented by color reproduction capability to the real world. The larger the color gamut (color space), the larger the coverage of the representative colors, and the more vivid the color of the display. Compared with some novel display technologies, such as OLED and QLED, the liquid crystal display technology using LED as backlight source has the advantages of long service life, mature production process, low cost and the like, but the current color gamut is low, and the ever-increasing visual demands of people cannot be met. Therefore, further improvement of the color gamut is an important development direction in the field of liquid crystal display.

The working principle of liquid crystal display shows that the light of the backlight source needs to pass through a color filter to obtain 3 independent R, G, B spectrums, and then the spectrums are combined into different colors. Only the backlight source with the spectrum similar to that of the optical filter can better transmit, and the luminous intensity is not lost. Therefore, the half-widths of the emission spectra of the green and red phosphors constituting the white LED are required to be narrow, and to be matched with the wavelength of the filter. Red phosphors for display at present, e.g. K ₂ SiF ₆ :Mn ⁴⁺ And the half-peak width of the emission spectrum is about 5nm, the color coordinates are close to the right lower end of the horseshoe-shaped graph, and the improvement on the color gamut is close to the maximum value. However, the existing green fluorescent powder has lower color purity, wider emission spectrum and larger difference of color coordinate values corresponding to different half-peak widths and peak wavelengths, so that development of a novel narrow-band green fluorescent powder system is needed to realize further improvement of color gamut.

At present, the green fluorescent powder is mainly concentrated on Ce ³⁺ 、Eu ²⁺ Or Mn of ²⁺ In systems where the ion acts as an activation center. Wherein Ce is ³⁺ Since the outer layer 4f energy level has only one electron, when excited to 5d energy level, the light emitting performance is seriously affected by the surrounding crystal field due to the shielding of the outer layer s and p electrons, the energy level is easily split, and the light emitting device is presentedBroad spectrum emission, half-peak width is typically greater than 100nm. Eu (Eu) ²⁺ The 5d energy level of the ion is exposed to the outside and is easily influenced by the surrounding crystal field to generate energy level splitting, but Eu ²⁺ In some crystal structures with stronger rigidity, such as beta-SiAlON and the like, the energy level splitting degree is reduced, and the half-peak width of an emission spectrum can be reduced to about 50 nm. And Mn of ²⁺ Is 3d in electronic configuration ⁵ The crystal has the advantages that the crystal generally presents 510-540 nm green luminescence in a tetrahedral crystal field, has narrower half-peak width (18-45 nm), concentrated energy and higher color purity, can be excited by a blue light chip, and can promote Mn by modes of matrix element proportion regulation, doping substitution, sensitization and the like ²⁺ The luminous intensity is improved, but the current luminous efficiency is not high.

In summary, the problems of low overall luminous efficiency, wide half-peak width and the like of the green phosphor for ultra-high color gamut display at present still have a certain gap from practical production and application, and development of a novel narrow-band green phosphor capable of being excited by a blue light chip is needed to meet the application requirements of the field of backlight sources for ultra-high color gamut display.

Disclosure of Invention

Based on the above situation in the prior art, an object of an embodiment of the present invention is to provide a light emitting material and a light emitting device including the light emitting material, so as to solve the problems of low light emitting efficiency of a narrow band green phosphor and low color gamut of a light emitting device for display in the prior art.

In order to achieve the above object, according to one aspect of the present invention, there is provided a light emitting material comprising an inorganic compound having a composition formula including an a element, a D element, an E element, a G element, an M element, and an X element;

the A element includes one or two of Ca, sr and Ba elements, the D element includes one or two of La, Y, gd and Lu elements, the E element includes one or two of Al, ga and In elements, the G element includes one or two of Si and Ge elements, the M element includes one or two of O, N and F elements, the X element includes one or two of Mn, eu and Ce elements, the Mn element is necessary, and the inorganic compound has a formula similar to SrAl ₂ Si ₂ O ₈ The same crystal structure.

Further, the inorganic compound is represented by the formula A _1-a D _d E _2+e G _2-g M _m X _x Expressed by the formula, a is more than or equal to 0.001 and less than or equal to 0.55,0.001, d is more than or equal to 0.001 and less than or equal to 0.55,0.001, e is more than or equal to 0.55,0.001, g is more than or equal to 0.55,7.8, m is more than or equal to 8.2,0.001, and x is more than or equal to 0.3.

Further, e/g is more than or equal to 0.8 and less than or equal to 1.2.

Further, a/d is more than or equal to 0.8 and less than or equal to 1.2.

Further, d/e is more than or equal to 0.8 and less than or equal to 1.2.

Further, d is more than or equal to 0.2 and less than or equal to 0.4.

Further, the element A is Sr and the element D is La.

Further, the E element is an Al element, and the G element is an Si element.

According to another aspect of the present invention there is provided a light emitting device comprising an excitation light source and a luminescent material comprising a luminescent material according to the first aspect of the present invention.

Further, the excitation light source is a semiconductor chip with an emission peak wavelength range of 400-470 nm.

In summary, embodiments of the present invention provide a light emitting material and a light emitting device including the light emitting material, wherein the light emitting material includes an inorganic compound having a structure similar to SrAl ₂ Si ₂ O ₈ The same crystal structure ensures that the absorption efficiency of the doped element in the excitation wavelength range is obviously improved by selecting the element types, the element contents, the doping proportion and the like contained in the inorganic compound, and the improvement of the emission intensity and the external quantum efficiency is promoted, so that the luminous intensity of the luminescent material is obviously improved. The luminescent material provided by the embodiment of the invention is matched with the corresponding light source and luminescent material, so that the luminescent device can emit light with high luminous efficiency and high color rendering, and the color gamut of the luminescent device can be effectively improved, thereby meeting the application requirements in the fields of ultra-high color gamut liquid crystal display backlights and the like.

Drawings

Fig. 1 is a schematic view of a light emitting device according to an embodiment of the present invention;

FIG. 2 is an XRD diffraction pattern of a luminescent material sample prepared in example 1 of the present invention;

FIG. 3 is a graph showing excitation and emission spectra of a luminescent material sample prepared in example 1 of the present invention; FIG. 3 (a) is a 515nm excitation spectrum of the luminescent material sample prepared in example 1, and FIG. 3 (b) is a 450nm excitation emission spectrum of the luminescent material sample prepared in example 1.

Reference numerals illustrate:

1-semiconductor chip, 2-glue adds luminescent material, 3-pin, 4-base, 5-plastic lens.

Detailed Description

The objects, technical solutions and advantages of the present invention will become more apparent by the following detailed description of the present invention with reference to the accompanying drawings. It should be understood that the description is only illustrative and is not intended to limit the scope of the invention. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the present invention.

In an embodiment of the present invention, there is provided a light emitting material including an inorganic compound having a composition formula including an a element, a D element, an E element, a G element, an M element, and an X element. Wherein the element A includes one or two of Ca, sr and Ba, the element D includes one or two of La, Y, gd and Lu, the element E includes one or two of Al, ga and In, the element G includes one or two of Si and Ge, the element M includes one or two of O, N and F, the element O, the element X includes one or two of Mn, eu and Ce, the element Mn, and the inorganic compound has a chemical formula similar to SrAl ₂ Si ₂ O ₈ The same crystal structure. At SrAl ₂ Si ₂ O ₈ :Mn ²⁺ In the luminescent material system, al ³⁺ With Si ⁴⁺ Occupy the same lattice site and is identical to O ^2- Respectively form [ AlO ] ₄ ]And [ SiO ] ₄ ]Tetrahedra, forming SrAl ₂ Si ₂ O ₈ Three-dimensional network structure frame of Sr ²⁺ Occupying the structural channels and forming a multi-ligand with O. And the luminous center Mn ²⁺ Occupies four coordination Al sites and produces green light emission. But Mn of ²⁺

With Al ³⁺ />

The difference between the radius and the charge of the crystal lattice tends to cause the increase of the degree of distortion of the local crystal lattice and the generation of lattice defects such as vacancies, thereby leading to Mn ²⁺ The actual entering lattice has limited concentration and low luminous efficiency. At the same time due to small radius Si ⁴⁺ />

With Al ³⁺ The average ionic radius of the actual Al/Si lattice sites is further reduced by occupying the same lattice sites, mn ²⁺ Is more difficult to introduce. Therefore, by partially substituting Si in G with Al in E, the average radius of the lattice site can be increased, and Mn is added without introducing other impurity elements ²⁺ The radius difference with Al/Si lattice sites is reduced, the doping concentration is correspondingly increased, and the luminous intensity of the material is improved. At the same time due to SiO ₂ The method has the advantages of strong dissolution assisting effect, abnormal growth of particles, serious agglomeration and poor overall appearance of most silicate luminescent materials in the sintering process, and is unfavorable for practical production and application. While Al-Si substitution enables SiO ₂ The dosage of the particles is reduced, the particle size is uniform, and the morphology is controllable. In the element A, the same main group alkaline earth metal Ba ²⁺ />

Sr ²⁺ />

Ca ²⁺ />

The ion radius of (a) is similar to that of (b) canThe mutual substitution is performed without changing the matrix structure, and the light emitting performance can be adjusted as required. The element D is composed of rare earth elements, has similar chemical properties and occupies the same lattice position as the element A. The D element is introduced to be used as a replacement element, and the difference of charges and radii between the D element and Ba, sr and Ca is utilized to effectively regulate the structural defect, lattice distortion and band gap of the material, promote the improvement of luminescence and thermal stability, for example, the replacement of Ba and Sr in the A element by La, Y, gd, lu with small radius or the replacement of Ca in the A element by Y, gd and Lu can lead the corresponding lattice to shrink, and the adjacent Al-O tetrahedron expands accordingly, thereby being beneficial to Mn ²⁺ Into the lattice. On the other hand, the combination of the substitution of the A-D element and the substitution of the E-G element can further improve the substitution effect of two lattice sites and mutually alleviate lattice distortion and vacancy defects generated during non-equivalent substitution. By BaAl ₂ Si ₂ O ₈ :Mn ²⁺ For example, when the substitution amount of al—si increases, local lattice expansion is caused, lattice distortion is serious, and light emission performance is affected with increase of anion vacancies. Trivalent rare earth element La in D element ³⁺ />

Y ³⁺ />

Gd ³⁺

Lu ³⁺ />

The ion can be used as a co-dopant ion to partially replace Ba, and the cell over-expansion is restrained on the basis of balancing charges. While for CaAl ₂ Si ₂ O ₈ :Mn ²⁺ In other words, the ratio Ca can be used ²⁺ Y having a small ionic radius ³⁺ 、Gd ³⁺ 、Lu ³⁺ As an alternative element, the distortion degree of the matrix crystal lattice is reduced, and a more stable environment is provided for the luminous center, so that the enhancement of light efficiency and the improvement of thermal stability are realized. Ga, in and Al In the E element are In the same main group, the element properties are similar, and the ion radius In of four coordination is ³⁺ />

Ga ³⁺ />

Close to Mn ²⁺ />

The unit cell parameters and the crystal field characteristics can be adjusted by adopting proper In or Ga to replace Al according to the requirement, so that the regulation and control of the luminous characteristics are realized. Among G elements, si ⁴⁺

Ge ⁴⁺ />

The element properties are similar, and the Ge part does not cause larger structural distortion when replacing Si, so that the substitution proportion of Ge-Si can be regulated and controlled according to the requirement, and the effective regulation of the spectral performance is realized. In the M element, O, N, F substitution is to realize spectrum controllable tuning by utilizing the characteristic that the electronegativity difference of anions affects the crystal field environment of the luminescence center. In the X element, eu or Ce is doped in an energy transfer mode, so that the absorption efficiency of the original singly doped Mn in an excitation wavelength range is improved, and the improvement of emission intensity and external quantum efficiency is promoted.

According to certain embodiments, the inorganic compound is represented by the formula A _1-a D _d E _2+e G _2-g M _m X _x Expressed by the formula, a is more than or equal to 0.001 and less than or equal to 0.55,0.001, d is more than or equal to 0.001 and less than or equal to 0.55,0.001, e is more than or equal to 0.55,0.001, g is more than or equal to 0.55,7.8, m is more than or equal to 8.2,0.001, and x is more than or equal to 0.3. Within this condition, the luminescent material remains substantially the same as SrAl ₂ Si ₂ O ₈ The crystal structure type of (a) is the same.

According to some embodiments, 0.8.ltoreq.e/g.ltoreq.1.2 in the inorganic compound of the luminescent material. e. g represents the content of E, G element from the stoichiometric ratio, respectively. Since E, G elements are in the same position, the above composition formula can be regarded as that part of G elements are replaced by E elements, so that E/G is equivalent to the substitution ratio of E elements to G elements. In the range of satisfying 0.8-1.2, E element and G element are fully replaced, so that serious lattice defects such as vacancies and interstitials are not caused, the relative stability of the main phase structure can be maintained, and after the E-G element is substituted, the lattice around the E/G is expanded to Mn due to the fact that the average ion radius of the whole E element is larger than that of the G element ²⁺ Provides a more relaxed introduction condition.

According to some embodiments, 0.8.ltoreq.a/d.ltoreq.1.2 in the inorganic compound of the luminescent material. a/D represents the ratio between the amount of substitution of the A element and the content of the D element in the A/D lattice, and corresponds to the ratio of substitution of the A element with the D element. Under the condition that a/D is more than or equal to 0.8 and less than or equal to 1.2, the alkaline earth metal element in the element A is fully replaced by the rare earth element in the element D, so that the stoichiometric ratio of the whole A/D lattice site is kept in a relatively stable pure phase interval, and no impurity phase is generated.

According to some embodiments, 0.8.ltoreq.d/e.ltoreq.1.2 in the inorganic compound of the luminescent material. D/E represents the ratio of the content of the rare earth element D to the content of the element E deviating from the ideal component, and is used for measuring the influence of the relative content of the two lattice substitutions on the overall structure and the luminous performance. When the Ba, sr and Ca elements in the A/D lattice site are partially replaced by the La, Y, gd, lu element in the D element, the charge imbalance caused by mutual replacement of E, G elements can be relieved, and the phase purity can be improved or the degree of lattice distortion can be changed. However, the concentrations of the two substitution modes need to be matched with each other, compared with single lattice site substitution, the embodiment of the invention has the advantages that the lattice sites A-D and E-G are simultaneously substituted, the ratio of D/E which is more than or equal to 0.8 and less than or equal to 1.2 is satisfied, and the luminous intensity is improved more obviously through the synergistic effect of the two lattice sites.

According to some embodiments, 0.2.ltoreq.d.ltoreq.0.4 in the inorganic compound of the luminescent material. By optimizing the dopingThe proportion of impurities in the matrix structure of the luminescent material remains relatively stable in this range, compared to undoped modified pure SrAl ₂ Si ₂ O ₈ :Mn ²⁺ The luminous intensity is obviously improved.

According to certain embodiments, in the inorganic compound of the luminescent material, the element a is Sr and the element D is La. SrAl ₂ Si ₂ O ₈ The volume of Al-O tetrahedron is

With BaAl ₂ Si ₂ O ₈ />

And CaAl ₂ Si ₂ O ₈

Maximum compared with Mn ²⁺ Under the pure-phase matrix, the concentration of the crystal lattice which can enter is larger, which is favorable for the subsequent structural optimization by means of element doping and the like. The a element therefore selects pure Sr element as part of the main phase structure. The D element selects pure La rare earth element as a doping system, the ion radius is larger and is slightly smaller than Sr at the same time ²⁺ The La-Sr substitution does not cause excessive lattice distortion, has relatively large substitution concentration, can be used as an equilibrium element in E-G substitution, and maintains the balance of charge and the relative stability of the whole crystal structure.

According to certain embodiments, in the inorganic compound of the luminescent material, the E element is an Al element and the G element is an Si element. Because the ionic radius of Al and Si elements is relatively small, [ AlO ] ₄ ]And [ SiO ] ₄ ]The three-dimensional network structure formed by tetrahedra is stable, and Al and Si occupy the same lattice site, which means that the proportion adjustment range between the two lattice sites is larger, and the lattice sites can be arranged in disorder. And Al and Si belong to adjacent main group elements in the same period, have similar chemical properties and relatively stable valence states, and are mutuallyThe degree of lattice distortion caused to the matrix structure upon substitution is small.

SrAl described in the embodiment of the invention ₂ Si ₂ O ₈ In the structural material, if the stoichiometric ratio of the elements A+ D, E, G, M is not strictly in the relation of 1:2:2:8, the structural material is regarded as SrAl on the basis of not changing the main crystal structure or not changing the basic luminous performance ₂ Si ₂ O ₈ And the like crystal structures.

In an embodiment of the present invention, there is also provided a method for preparing the above luminescent material, including the steps of:

according to formula A of inorganic matter contained in the luminescent material _1-a D _d E _2+e G _2-g M _m X _x Corresponding oxide, carbonate, nitrate, fluoride and the like are weighed according to the stoichiometric ratio as raw materials, and the symmetrically-taken raw materials are ground and mixed to obtain a raw material mixture.

Putting the ground raw material mixture into a high-temperature furnace, and introducing N ₂ The method comprises the steps of carrying out a first treatment on the surface of the Then heating to 1250-1500 ℃ according to the heating rate of 1-15 ℃/min, preferably, the heating rate of a high-temperature furnace is 5-8 ℃/min, preserving heat for 2-10 hours at 1250-1500 ℃, and then cooling to room temperature along with the furnace to obtain the sintered body.

Grinding the cooled sintered body, washing with water, sieving, and drying to obtain the final product of luminescent material.

In an embodiment of the present invention, there is also provided a light emitting device including an excitation light source and a light emitting material including the light emitting material referred to in the above embodiment. Fig. 1 shows a schematic structure of the light emitting device, as shown in fig. 1, an excitation light source is, for example, a semiconductor chip 1 with an emission peak wavelength range of 400-470nm, the semiconductor chip 1 is arranged on a base 4, the semiconductor chip 1 is wrapped inside by glue and a luminescent material 2, a plastic lens 5 is covered outside the semiconductor chip 1, and pins 3 are led out from two ends of the base 4 respectively. Preferably, the excitation light source is, for example, a semiconductor chip 1 with an emission peak wavelength in the range of 400-470 nm. The luminescent material has a characteristic excitation peak at 450nm, and has higher excitation efficiency in the wavelength range. Preferably, the luminescent material further comprises fluorescent powder with an emission wavelength ranging from 620 nm to 680nm, quantum dot material, semiconductor chip and the like. The color gamut of the light-emitting device can be effectively improved by utilizing the light-emitting material of the invention to be compositely packaged with the fluorescent powder with the wavelength of 620-680nm, the quantum dot material and the semiconductor chip.

The luminescent material provided by the invention is matched with the light source and the luminescent material, so that the luminescent device emits light with high luminous efficiency and high color rendering, and the application requirements of the fields of ultra-high color gamut liquid crystal display backlights and the like are met.

Specific examples and comparative examples are described below.

Comparative example 1

Molecular formula is SrAl _1.98 Si ₂ O _7.99 Mn _0.02 The compound (composition elements are shown in Table 1) was sintered by a high-temperature solid phase method, and the luminous intensity under excitation of 450nm blue light was set to 100.

Example 1

Use of SrCO ₃ 、La ₂ O ₃ 、Al ₂ O ₃ 、SiO ₂ 、MnCO ₃ To obtain a composition Sr as a raw powder _0.7 La _0.3 Al _2.28 Si _1.7 O _7.99 Mn _0.02 The compound represented by (composition elements are shown in Table 1), and 27.71% by weight of SrCO was weighed ₃ 13.11% by weight of La ₂ O ₃ 31.17% by weight of Al ₂ O ₃ 27.39% by weight of SiO ₂ And 0.62% by weight of MnCO ₃ Grinding and mixing the raw materials uniformly, loading the mixture into a crucible, and sintering the mixture in a high-temperature furnace at 1350 ℃ for 4 hours; cooling to room temperature along with a furnace to obtain a sintered sample; and ball milling, water washing and sieving the sample to obtain the luminescent material. The luminescent material obtained in example 1 was examined by X-ray spectroscopy (Co target), and its XRD diffraction pattern was consistent with PDF#38-1454 and was SrAl ₂ Si ₂ O ₈ The XRD diffractogram of the luminescent material sample prepared in this example 1 is shown in figure 2 for the monoclinic structure. Example 1 was performed using a fluorescence spectrometerAnd (3) performing line analysis, wherein the luminescent material has narrow-spectrum luminescence with a green spectrum under the excitation of 450nm blue light, the peak wavelength of the luminescent material is 515nm, and the relative luminescence intensity of the luminescent material is 350. The excitation and emission spectra of the luminescent material sample prepared in example 1 are shown in fig. 3, wherein fig. 3 (a) is a 515nm excitation spectrum of the luminescent material sample prepared in example 1, and fig. 3 (b) is a 450nm excitation emission spectrum of the luminescent material sample prepared in example 1. As can be seen from FIG. 3, the luminescent material has higher absorption intensity in the blue light region, the emission spectrum range is between 500 and 550nm, and the half-peak width is about 35 nm.

Example 2

Use of SrCO ₃ 、La ₂ O ₃ 、Al ₂ O ₃ 、SiO ₂ 、MnCO ₃ To obtain a composition Sr as a raw powder _0.6 La _0.4 Al _2.38 Si _1.6 O _7.99 Mn _0.02 The compound (the composition elements are shown in table 1) is prepared by weighing the corresponding raw materials according to the stoichiometric ratio, sintering in a high-temperature furnace and performing post-treatment. The material of example 2 was analyzed by fluorescence spectrometer, which has a narrow spectrum luminescence of green spectrum under excitation of 450nm blue light, with a peak wavelength of 515nm and a relative luminescence intensity of 336.

Example 3

Use of SrCO ₃ 、La ₂ O ₃ 、Al ₂ O ₃ 、SiO ₂ 、MnCO ₃ To obtain a composition Sr as a raw powder _0.8 La _0.2 Al _2.18 Si _1.8 O _7.99 Mn _0.02 The compound (the composition elements are shown in table 1) is prepared by weighing the corresponding raw materials according to the stoichiometric ratio, sintering in a high-temperature furnace and performing post-treatment. The material of example 3 was analyzed by fluorescence spectrometer, which has a narrow spectrum luminescence of green spectrum under excitation of 450nm blue light, with a peak wavelength of 515nm and a relative luminescence intensity of 268.

The compositions of comparative example 1, examples 1-29 and the relative luminescence intensities under excitation at a 450nm light source are shown in Table 1. The preparation of examples 4-29 was similar to that of examples 1-3 above, with the original powders and the final compounds employed as shown in Table 1.

Table 1 comparative example 1, chemical formulas and luminescence properties of each example

As can be seen from the data of the comparative example and each example, the luminescent material provided by the embodiment of the invention has higher luminous intensity under the excitation of the blue light chip, solves the problem of lower luminous efficiency of the narrow-band green fluorescent powder in the prior art, and meets the application requirements of the field of the backlight source for the ultra-high color gamut display.

As can be seen from examples 1-10, the SrAl is co-substituted with La-Al ₂ Si ₂ O ₈ :Mn ²⁺ The luminescent material system is structurally modified, so that on one hand, lattice distortion caused by single substitution of La-Sr or Al-Si can be balanced with each other, and the relative stability of the overall structure of the matrix is maintained; on the other hand, the two non-equivalent substitutions can mutually compensate charges, reduce the generation of lattice defects such as anion vacancies and cation vacancies and effectively avoid Mn ²⁺ The change in valence state in the incorporated crystal lattice results in a decrease in the luminous intensity. Meanwhile, through the regulation and control of the d/e ratio, the fact that when two substitution modes of La-Sr and Al-Si are matched with each other, namely d/e is approximately equal to 1, the relative luminous intensity of the luminous material reaches a peak value is found, and the improvement effect of the modification means on luminous performance is further verified. In addition, compared with examples 24 to 29, the luminescent material obtained by the above-mentioned scheme of element combination does not change the original SrAl ₂ Si ₂ O ₈ On the basis of the matrix phase structure, the overall relative emission intensity is higher. As can be seen from examples 3, 22 and 23, the Eu or Ce can function as a sensitizer to a certain extent to promote Mn under the condition that the concentration of the activator ions is the same ²⁺ The luminous intensity is effectively improved.

In summary, embodiments of the present invention relate to a luminescent material and a light-emitting device including the luminescent materialThe material comprises an inorganic compound and the inorganic compound has a chemical structure with SrAl ₂ Si ₂ O ₈ The same crystal structure ensures that the absorption efficiency of the doped element in the excitation wavelength range is obviously improved by selecting the element types, the element contents, the doping proportion and the like contained in the inorganic compound, and the improvement of the emission intensity and the external quantum efficiency is promoted, so that the luminous intensity of the luminescent material is obviously improved. The luminescent material provided by the embodiment of the invention is matched with the corresponding light source and luminescent material, so that the luminescent device can emit light with high luminous efficiency and high color rendering, and the color gamut of the luminescent device can be effectively improved, thereby meeting the application requirements in the fields of ultra-high color gamut liquid crystal display backlights and the like.

It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explanation of the principles of the present invention and are in no way limiting of the invention. Accordingly, any modification, equivalent replacement, improvement, etc. made without departing from the spirit and scope of the present invention should be included in the scope of the present invention. Furthermore, the appended claims are intended to cover all such changes and modifications that fall within the scope and boundary of the appended claims, or equivalents of such scope and boundary.

Claims

1. A light-emitting material comprising an inorganic compound having a composition formula including an element a, an element D, an element E, an element G, an element M, and an element X;

2. According to the weightsThe luminescent material as claimed in claim 1, wherein the inorganic compound is represented by the formula A _1-a D _d E _2+e G _2- _g M _m X _x Expressed by the formula, a is more than or equal to 0.001 and less than or equal to 0.55,0.001, d is more than or equal to 0.001 and less than or equal to 0.55,0.001, e is more than or equal to 0.55,0.001, g is more than or equal to 0.55,7.8, m is more than or equal to 8.2,0.001, and x is more than or equal to 0.3.

3. The luminescent material as claimed in claim 2, wherein 0.8.ltoreq.e/g.ltoreq.1.2.

4. A luminescent material as claimed in claim 3, characterized in that 0.8. Ltoreq.a/d. Ltoreq.1.2.

5. The luminescent material as claimed in claim 4, wherein 0.8.ltoreq.d/e.ltoreq.1.2.

6. The luminescent material according to claim 5, wherein d is 0.2.ltoreq.d.ltoreq.0.4.

7. The luminescent material according to claim 6, wherein the element A is Sr and the element D is La.

8. The light-emitting material according to any one of claims 1 to 7, wherein the E element is an Al element and the G element is an Si element.

9. A light-emitting device comprising an excitation light source and a luminescent material, characterized in that the luminescent material comprises a luminescent material as claimed in any one of claims 1-8.

10. The light-emitting device according to claim 9, wherein the excitation light source is a semiconductor chip having an emission peak wavelength in a range of 400 to 470 nm.