CN116333604A - 一种用于单晶硅片制绒的粗抛助剂 - Google Patents
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Abstract
本发明提供一种用于硅片制绒的粗抛助剂,属于光伏技术领域。其各组分质量百分比为:清洗组分:1%‑10%,分散组分:0.1%‑5%,脱泡组分:0.1%‑5%,减重控制组分0.1%‑10%,络合组分1%‑10%,其余为水。所得粗抛助剂可以应用于金刚线切割的单晶制绒工艺的碱液粗抛槽中。与不添加本助剂相比,可明显减少对前端硅片洁净度的依赖,并且可以有效控制减重,防止硅片反应过程中飘栏、跳片,减少由于前端硅片清洗不足产生的脏污问题,一定程度上提高转化率。
Description
技术领域
本发明涉及一种用于硅片制绒工艺中粗抛槽的粗抛助剂,属于光伏技术领域,尤其涉及光伏制绒工艺领域。
背景技术
随着人们对能源需求不断加大,对环境保护越来越重视,利用太阳能成为人类社会的迫切需要,光伏发电即为利用太阳能的一个重要应用。通过制绒工艺增加硅片表面对光的吸收,不仅可提高晶体硅太阳电池的效率,还可降低晶体硅太阳电池的生产成本。采用化学法制绒技术对硅片表面腐蚀,制造出大小均匀、粗糙度较好和反射率合适的绒面,可有效提高太阳电池的光电转换效率。
对于我国的光伏市场,近些年发展也越来越迅速,产能逐步增大,形成一套较完整的生产体系,对生产过程要求也越来越严格。其中在制绒过程中用到的制绒添加剂在单晶和多晶制绒中起到非常重要的作用,可有效提高电池效率。在制绒工艺中,对前端硅片洁净度要求较高,实验验证前端硅片清洗脏污率较高时,后端制绒出现白斑、缺失、跳片、漂篮的比例也会增加。虽然在制绒工艺前面有类似碱/双氧水或者HCL的粗抛助剂槽,但是作用有限,并且此槽减重通过药剂和时间控制,并且控制不当有飘栏风险,难以满足粗抛助剂清洗的要求。
发明内容
有鉴于此,本发明的目的在于提供一种用于硅片制绒的粗抛助剂,可以应用于金刚线切割单晶碱液制绒,与不添加本助剂相比,可明显减少对前端硅片洁净度的依赖,并且根据要求可以有效控制减重,防止硅片反应过程中飘栏、跳片,减少由于前端硅片清洗不足产生的脏污问题,一定程度上提高转化率。本发明的制备工艺简单,适合工业化生产。
为了实现上述发明目的,本发明提供以下技术方案:
本发明的目的在于提供一种用于硅片制绒的粗抛助剂, 其特征在于,所述各组分重量百分比为:
清洗组分:1%-10%,
分散组分:0.1%-5%,
脱泡组分;0.1%-5%,
减重控制组分0.1%-10%,
络合组分1%-10%,
其余为水。
将上述组分按一定比例投入反应釜中混合均匀,即可得到所述硅片制绒的粗抛助剂。
优选地,所述清洗组分为异己二醇、乙二醇丁醚、二乙二醇丁醚、三乙二醇丁醚一种或多种复配而得,总重量为1%-10%。
优选地,所述分散组分为木质素磺酸钠、聚丙烯酸、聚丙烯酸马来酸酐共聚物的一种或多种复配,总用量为0.1%-5%。
优选地,所述脱泡组分为聚乙烯醇、聚乙烯吡咯烷酮、羧甲基纤维素钠的一种或多种复配,总重量为0.1%-5%。
1、优选地,所述减重控制组分为聚乙二醇,其分子量为200、400、600、1000的一种或多种复配,总重量为0.1%-10%。
优选地,所述络合组分为EDTA、柠檬酸钠、葡萄糖酸钠、三乙醇胺的一种或多种复配,总重量为1%-10%。
优选地,所述水为超纯水,总用量60-90%。
具体实施方式
本发明的目的在于提供一种用于硅片制绒的粗抛助剂, 其特征在于,所述各组分重量百分比为:
清洗组分:1%-10%,
分散组分:0.1%-5%,
脱泡组分;0.1%-5%,
减重控制组分0.1%-10%,
络合组分1%-10%,
其余为水。
将上述组分按一定比例投入反应釜中混合均匀,即可得到所述硅片制绒的粗抛助剂。
所述清洗组分为异己二醇、乙二醇丁醚、二乙二醇丁醚、三乙二醇丁醚一种或多种复配而得,总重量为1%-10%。优选的异己二醇3%-8%、三乙二醇丁醚1%-5%。
所述分散组分为木质素磺酸钠、聚丙烯酸、聚丙烯酸马来酸酐共聚物的一种或多种复配,总用量为0.1%-5%。优选的总用量0.5%-3%。
所述脱泡组分为聚乙烯醇、聚乙烯吡咯烷酮、羧甲基纤维素钠的一种或多种复配,总重量为0.1%-5%。优选的聚乙烯醇0.1%-0.5%,羧甲基纤维素钠0.1%-0.5%。
所述减重控制组分为聚乙二醇,其分子量为200、400、600、1000的一种或多种复配,总重量为0.1%-10%。优选的碱重0.1g以下时,聚乙二醇1000为0.5%-3%。优选的减重0.1g-0.5g时,聚乙二醇400为0.1%-5%
所述络合组分为EDTA、柠檬酸钠、葡萄糖酸钠、三乙醇胺的一种或多种复配,总重量为1%-10%。优选的总质量为2%-8%
所述水为去离子水,总用量60-90%。
下面结合实施例对本发明提供的一种用于硅片制绒的粗抛助剂进行详细的说明,但是不能把它们理解为对本发明保护范围的限定。
实施例1
单晶硅片制绒的粗抛助剂,减重要求在0.1g以下:
异己二醇:5%,
三乙二醇丁醚:3%
木质素磺酸钠:1%,
羧甲基纤维素钠:0.2%
聚乙烯醇;0.1%,
聚乙二醇1000:0.7%,
柠檬酸:2%,
其余为水
将上述组分按一定比例投入反应釜中混合均匀,即可得到所述硅片碱液制绒的添加剂。工艺步骤如下:
1.将6.5kg氢分散钾溶于350kg去离子水中,配置得到质量分数为1.8%的氢分散钾溶液。
2.在步骤1中的氢氧化钾溶液中按重量添加0.5%实施例1的粗抛助剂。
3.将太阳能电池用单晶硅片浸泡在步骤2中溶液中,粗抛助剂温度控制在60-85℃,时间110s。
4.后续步骤按制绒工艺进行,硅片为某时段异常片源导致制绒脏污较高批次。
表1 实验对比
空白组 | 添加剂组 | |
减重 | 0.1g-0.5g | 0.01g-0.08g |
制绒脏污率 | 0.216% | 0.037% |
转化率 | 22.21% | 22.30% |
实施例2
单晶硅片制绒的粗抛助剂,减重要求在0.1g-0.5之间:
异己二醇:3%,
三乙二醇丁醚:1%
木质素磺酸钠:1%,
羧甲基纤维素钠:0.3%
聚乙烯醇:0.15%,
聚乙二醇400:0.5%,
柠檬酸:2%,
其余为水
将上述组分按一定比例投入反应釜中混合均匀,即可得到所述硅片碱液制绒的添加剂。工艺步骤如下:
1.将6.5kg氢分散钾溶于350kg去离子水中,配置得到质量分数为1.8%的氢分散钾溶液。
2.在步骤1中的氢分散钾溶液中按重量添加0.5%实施例1的粗抛助剂。
3.将太阳能电池用单晶硅片浸泡在步骤2中溶液中,粗抛助剂温度控制在60-85℃,时间110s。
4.后续步骤按制绒工艺进行,硅片为某时段异常片源导致制绒脏污较高批次。
表1 实验对比
空白组 | 添加剂组 | |
减重 | 0.1g-0.5g | 0.2g-0.3g |
脏污率 | 0.216% | 0.024% |
转化率 | 22.21% | 22.38% |
Claims (7)
1.一种用于硅片制绒的粗抛助剂, 其特征在于,所述硅片碱洗助剂重量百分比为:
清洗组分:1%-10%,
分散组分:0.1%-5%,
脱泡组分;0.1%-5%,
减重控制组分0.1%-10%,
络合组分1%-10%,
其余为水。
2.根据权利要求1所述硅片制绒的粗抛助剂,其特征在于,所述清洗组分为异己二醇、乙二醇丁醚、二乙二醇丁醚、三乙二醇丁醚一种或多种复配而得,总重量为1%-10%。
3.根据权利要求1所述硅片制绒的粗抛助剂,其特征在于,所述分散组分为木质素磺酸钠、聚丙烯酸、聚丙烯酸马来酸酐共聚物的一种或多种复配,总用量为0.1%-5%。
4.根据权利要求1所述硅片制绒的粗抛助剂,其特征在于,所述脱泡组分为聚乙烯醇、聚乙烯吡咯烷酮、羧甲基纤维素钠的一种或多种复配,总重量为0.1%-5%。
5.根据权利要求1所述硅片制绒的粗抛助剂,其特征在于,所述减重控制组分为聚乙二醇,其分子量为200、400、600、1000的一种或多种复配,总重量为0.1%-10%。
6.根据权利要求1所述硅片制绒的粗抛助剂,其特征在于,所述络合组分为EDTA、柠檬酸钠、葡萄糖酸钠、三乙醇胺的一种或多种复配,总重量为1%-10%。
7.根据权利要求1所述硅片制绒的粗抛助剂,其特征在于,所述水为去超纯水,总用量60-90%。
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