CN116332645A - Molybdenum oxide tantalum target material and preparation method and application thereof - Google Patents

Molybdenum oxide tantalum target material and preparation method and application thereof Download PDF

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Publication number
CN116332645A
CN116332645A CN202310318909.0A CN202310318909A CN116332645A CN 116332645 A CN116332645 A CN 116332645A CN 202310318909 A CN202310318909 A CN 202310318909A CN 116332645 A CN116332645 A CN 116332645A
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molybdenum
pressureless sintering
tantalum
mixture
cold pressing
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姚力军
潘杰
黄洁文
王学泽
吴东青
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Ningbo Jiangfeng Electronic Material Co Ltd
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Ningbo Jiangfeng Electronic Material Co Ltd
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Abstract

The invention provides a molybdenum tantalum oxide target material, a preparation method and application thereof, wherein the preparation method comprises the following steps: (1) Uniformly mixing molybdenum trioxide powder and tantalum powder to obtain a mixture; (2) Uniformly mixing the binder solution and the mixture obtained in the step (1), and then cold pressing; (3) And (5) performing pressureless sintering after cold pressing to obtain the molybdenum oxide tantalum target. According to the preparation method provided by the invention, the binding agent is added into the mixture to enhance the strength among particles, and then the compactness of the obtained molybdenum oxide tantalum target is improved in a mode of combining cold pressing and pressureless sintering, so that the problem of low compactness caused by sublimation of molybdenum oxide at a high temperature is avoided.

Description

Molybdenum oxide tantalum target material and preparation method and application thereof
Technical Field
The invention belongs to the technical field of semiconductors, relates to a target material and a preparation method and application thereof, and particularly relates to a molybdenum oxide tantalum target material and a preparation method and application thereof.
Background
Molybdenum oxide layers are low in optical reflection, whether for reliable separation of sub-pixels, ideal coverage of conductor tracks, or for preventing disturbing ambient light reflections, and therefore have found wide application in modern flat screens. However, with the increasing size and high precision of flat panel displays, the requirements on specific resistance, corrosion resistance and thermal stability of materials are higher and higher, and tantalum metal has the characteristics of high melting point and excellent chemical corrosion resistance, high temperature resistance, thermal conductivity and electrical conductivity, so in order to adjust the etching property and chemical resistance of a molybdenum oxide layer, it is necessary to dope tantalum element into molybdenum oxide to synthesize a molybdenum-tantalum oxide target.
Currently, methods for preparing molybdenum oxide targets include sintering processes, and temperatures typically above 600 ℃. For example, CN104611673a discloses a method for preparing a molybdenum alloy target, which comprises the following steps: (1) Mixing molybdenum powder with powder of carbon and at least one metal element selected from titanium, chromium, niobium and tantalum groups to form uniform alloy powder; (2) Adding the alloy powder into a pressurized container, performing a degassing process in a vacuum descending pressurized container, and sealing an air outlet; (3) Pressurizing and heating by using a hot isostatic pressing process, and adding oxygen into the pressurizing container to make the alloy powder into an alloy blank; (4) annealing the alloy blank in a high temperature furnace; (5) The alloy is cut, refined and machined into molybdenum alloy target finished products.
CN113614278A discloses a sputter target for preparing a molybdenum oxide layer, comprising at least one of the following metal oxides: a metal oxide of molybdenum as a main component of the metal; and at least one metal oxide doped with element M selected from the group consisting of tantalum, niobium, vanadium and titanium. Based on the polished cross section of the target, the target comprises a material consisting of mixed oxide (Mo 1-x M x ) 5 O 14 A matrix phase of composition, wherein 0.01.ltoreq.x.ltoreq.0.13, wherein M in the mixed oxide is one or more elements selected from the group consisting of tantalum, niobium, vanadium and titanium.
CN114737159a discloses a molybdenum trioxide sputtering target, a preparation method and a target mold, the preparation method is to spray and granulate the molybdenum trioxide powder solution as raw material to obtain a spherical molybdenum trioxide powder, then fill the spherical molybdenum trioxide powder into the target mold, and sequentially perform hydraulic pressing, hot pressing treatment and processing treatment to obtain the molybdenum trioxide sputtering target. The molybdenum trioxide sputtering target is finally obtained by combining a spray granulation and hot pressing process and matching with a special target mold.
But MoO 3 Obvious sublimation phenomenon exists at the temperature of above 600 ℃, so that MoO with higher density is difficult to obtain by the conventional sintering method 3 A target; the sintering temperature is controlled below 600 ℃ to inhibit sublimation, but the compactness cannot be obviously improved, and the problems are also caused when the molybdenum oxide tantalum target material is prepared.
Aiming at the problems existing in the prior art, it is necessary to provide a method for preparing high-density molybdenum oxide tantalum target material and a preparation method and application thereof.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a molybdenum oxide tantalum target material, and a preparation method and application thereof.
To achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a method for preparing a molybdenum tantalum oxide target, the method comprising the steps of:
(1) Uniformly mixing molybdenum trioxide powder and tantalum powder to obtain a mixture;
(2) Uniformly mixing the binder solution and the mixture obtained in the step (1), and then cold pressing;
(3) And (5) performing pressureless sintering after cold pressing to obtain the molybdenum oxide tantalum target.
The preparation method provided by the invention enhances the bonding strength between particles through the use of the binder; cold pressing to obtain a green body with regular shape and higher density; and then adopting a pressureless sintering mode to prepare the molybdenum-tantalum oxide target, so that the problem of low density caused by sublimation of molybdenum oxide at high temperature is avoided.
Preferably, the cold pressing in step (2) has a pressure of 20-40MPa.
Preferably, the dwell time of the cold pressing of step (2) is 2-5min.
Preferably, the absolute pressure of the pressureless sintering in the step (3) is less than or equal to 50Pa.
Preferably, the temperature rising rate of the pressureless sintering in the step (3) is 2-5 ℃/min.
Preferably, the pressureless sintering temperature in step (3) is 550-700 ℃.
Preferably, the pressureless sintering in step (3) has a holding time of 8-15 hours.
Preferably, the binder solution of step (2) comprises a polyvinyl alcohol solution.
Preferably, the concentration of the polyvinyl alcohol solution is 3 to 8wt%.
Preferably, the binder in the binder solution in step (2) is 0.2-1wt% of the mixture.
Preferably, the particle diameter D50 of the molybdenum trioxide powder in the step (1) is 5-10 mu m.
Preferably, the particle size D50 of the tantalum powder in the step (1) is 20-40 μm.
Preferably, the mass of the molybdenum trioxide powder in the step (1) is 80-95wt% of the mixture.
Preferably, the molybdenum trioxide powder in the step (1) is obtained by baking ammonium molybdate.
In a second aspect, the invention provides a molybdenum tantalum oxide target, which is prepared by the preparation method in the first aspect.
In a third aspect, the present invention provides an application of the molybdenum tantalum oxide target material in the first aspect, wherein the molybdenum tantalum oxide target material is used for magnetron sputtering.
Compared with the prior art, the invention has the beneficial effects that:
the preparation method provided by the invention enhances the bonding strength between particles through the use of the binder; cold pressing to obtain a green body with regular shape and higher density; and then adopting a pressureless sintering mode to prepare the molybdenum-tantalum oxide target, so that the problem of low density caused by sublimation of molybdenum oxide at high temperature is avoided.
Detailed Description
An embodiment of the present invention provides a method for preparing a molybdenum tantalum oxide target, including the following steps:
(1) Uniformly mixing molybdenum trioxide powder and tantalum powder to obtain a mixture;
(2) Uniformly mixing the binder solution and the mixture obtained in the step (1), and then cold pressing;
(3) And (5) performing pressureless sintering after cold pressing to obtain the molybdenum oxide tantalum target.
The preparation method provided by the invention enhances the bonding strength between particles through the use of the binder; cold pressing to obtain a green body with regular shape and higher density; and then, by adopting a pressureless sintering mode and controlling the temperature rising speed and the heat preservation time in the pressureless sintering process, the prepared molybdenum oxide tantalum target material has higher density, and the problem of low density caused by sublimation of molybdenum oxide at high temperature is avoided.
The preparation method also comprises a conventional furnace-following cooling process after pressureless sintering, and the invention is not repeated here.
In certain embodiments, the cold pressing in step (2) is performed at a pressure of 20-40MPa, such as 20MPa, 25MPa, 30MPa, 35MPa, or 40MPa, but not limited to the recited values, and other non-recited values within the range are equally applicable.
In certain embodiments, the dwell time of the cold pressing in step (2) is 2-5min, such as 2min, 3min, 4min or 5min, but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
In some embodiments, the absolute pressure of the pressureless sintering in step (3) is less than or equal to 50Pa, such as 10Pa, 20Pa, 30Pa, 40Pa, or 50Pa, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
The pressureless sintering in the step (3) is performed in a protective atmosphere, and illustratively, after vacuumizing to the absolute pressure of less than or equal to 50Pa, protective gas is introduced and the absolute pressure is maintained, and pressureless sintering is started.
The shielding gas includes, but is not limited to, nitrogen and/or an inert gas including helium and/or argon.
In certain embodiments, the pressureless sintering in step (3) has a ramp rate of 2-5 ℃ per minute, such as 2 ℃, 3 ℃, 4 ℃ per minute, or 5 ℃ per minute, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
In certain embodiments, the pressureless sintering in step (3) is performed at a temperature of 550-700 ℃, such as 550 ℃, 600 ℃, 650 ℃, or 700 ℃, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
In certain embodiments, the pressureless sintering in step (3) is maintained for a period of 8-15 hours, such as 8 hours, 10 hours, 12 hours, 14 hours, or 15 hours, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
In certain embodiments, the binder solution of step (2) comprises a polyvinyl alcohol solution.
In certain embodiments, the polyvinyl alcohol solution has a concentration of 3-8wt%, such as 3wt%, 4wt%, 5wt%, 6wt%, or 8wt%, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
In certain embodiments, the binder in the binder solution in step (2) is 0.2-1wt% of the mixture, for example, 0.2wt%, 0.4wt%, 0.5wt%, 0.6wt%, 0.8wt% or 1wt%, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
When the binder accounts for lower mass percent of the mixture, the good effect of improving the density cannot be achieved; when the binder accounts for higher mass percent of the mixture, the binder is decomposed during pressureless sintering, so that the density of the obtained molybdenum oxide tantalum target is not improved.
In certain embodiments, the molybdenum trioxide powder of step (1) has a particle size D50 of 5-10 μm, such as 5 μm, 6 μm, 8 μm, 9 μm, or 10 μm, but is not limited to the recited values, as other non-recited values within the range of values are equally applicable.
In certain embodiments, the tantalum powder of step (1) has a particle size D50 of 20-40 μm, such as 20 μm, 25 μm, 30 μm, 35 μm or 40 μm, but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
The mass purity of the molybdenum trioxide powder is more than 99.5%; the purity of the tantalum powder is more than 6N.
In certain embodiments, the molybdenum trioxide powder of step (1) is 80-95wt% of the blend, such as 80wt%, 85wt%, 88wt%, 90wt% or 95wt%, but is not limited to the recited values, as other non-recited values within the range of values are equally applicable.
In certain embodiments, the molybdenum trioxide powder of step (1) is obtained from the torrefaction of ammonium molybdate.
The baking process refers to a process of carrying out high-temperature treatment on ammonium molybdate in an oxygen-containing atmosphere to generate decomposition reaction so as to obtain molybdenum trioxide powder. The invention is not limited to specific parameters of the torrefaction as long as the conversion of ammonium molybdate into molybdenum trioxide powder can be achieved.
The torrefaction temperature is, for example, 400-600 ℃, and may be, for example, 300 ℃, 350 ℃, 400 ℃, 450 ℃, 500 ℃, 550 ℃, or 600 ℃, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
The baking time is 60-100min, for example, 60min, 70min, 80min, 90min or 100min, but not limited to the recited values, and other non-recited values in the range of values are equally applicable.
In some embodiments, the method for preparing a molybdenum tantalum oxide target comprises the steps of:
(1) Uniformly mixing molybdenum trioxide powder with the particle size D50 of 5-10 mu m and tantalum powder with the particle size D50 of 20-40 mu m to obtain a mixture; the mass of the molybdenum trioxide powder is 80-95wt% of the mixture;
(2) Uniformly mixing a polyvinyl alcohol solution with the concentration of 3-8wt% with the mixture obtained in the step (1), and then cold pressing; the polyvinyl alcohol accounts for 0.2 to 1 weight percent of the mixture; the pressure of the cold pressing is 20-40MPa, and the pressure maintaining time is 2-5min;
(3) Carrying out pressureless sintering after cold pressing, and carrying out furnace-following cooling after pressureless sintering to obtain the molybdenum tantalum oxide target; the pressureless sintering is carried out in a protective atmosphere, and the absolute pressure of the pressureless sintering is less than or equal to 50Pa; the temperature rising rate of the pressureless sintering is 2-5 ℃/min, the temperature is 550-700 ℃, and the heat preservation time is 8-15h.
The numerical ranges recited herein include not only the above-listed point values, but also any point values between the above-listed numerical ranges that are not listed, and are limited in space and for the sake of brevity, the present invention is not intended to be exhaustive of the specific point values that the stated ranges include.
The technical scheme of the invention is further described by the following specific embodiments. In order to more clearly illustrate the technical scheme of the invention, the molybdenum trioxide powder in the specific embodiment is obtained by baking ammonium molybdate, wherein the purity of the molybdenum trioxide powder is more than 99.5 percent, and the purity of the tantalum powder is more than 6N.
Example 1
The embodiment provides a preparation method of a molybdenum tantalum oxide target, which comprises the following steps:
(1) Uniformly mixing molybdenum trioxide powder with the particle size D50 of 8 mu m and tantalum powder with the particle size D50 of 30 mu m to obtain a mixture; the mass of the molybdenum trioxide powder is 90wt% of the mixture;
(2) Uniformly mixing a polyvinyl alcohol solution with the concentration of 5wt% with the mixture obtained in the step (1), and then cold pressing; the polyvinyl alcohol is 0.5wt% of the mixture; the pressure of the cold pressing is 30MPa, and the pressure maintaining time is 4min;
(3) Carrying out pressureless sintering after cold pressing, and carrying out furnace-following cooling after pressureless sintering to obtain the molybdenum tantalum oxide target; the pressureless sintering is carried out in a protective atmosphere, and the absolute pressure of the pressureless sintering is 50Pa; the temperature rising rate of the pressureless sintering is 4 ℃/min, the temperature is 580 ℃, and the heat preservation time is 12h.
Example 2
The embodiment provides a preparation method of a molybdenum tantalum oxide target, which comprises the following steps:
(1) Uniformly mixing molybdenum trioxide powder with the particle size D50 of 5 mu m and tantalum powder with the particle size D50 of 20 mu m to obtain a mixture; the mass of the molybdenum trioxide powder is 90wt% of the mixture;
(2) Uniformly mixing a polyvinyl alcohol solution with the concentration of 3wt% with the mixture obtained in the step (1), and then cold pressing; the polyvinyl alcohol is 0.2wt% of the mixture; the pressure of the cold pressing is 20MPa, and the pressure maintaining time is 5min;
(3) Carrying out pressureless sintering after cold pressing, and carrying out furnace-following cooling after pressureless sintering to obtain the molybdenum tantalum oxide target; the pressureless sintering is carried out in a protective atmosphere, and the absolute pressure of the pressureless sintering is 50Pa; the temperature rising rate of the pressureless sintering is 2 ℃/min, the temperature is 550 ℃, and the heat preservation time is 15h.
Example 3
The embodiment provides a preparation method of a molybdenum tantalum oxide target, which comprises the following steps:
(1) Uniformly mixing molybdenum trioxide powder with the particle size D50 of 10 mu m and tantalum powder with the particle size D50 of 40 mu m to obtain a mixture; the mass of the molybdenum trioxide powder is 90wt% of the mixture;
(2) Uniformly mixing a polyvinyl alcohol solution with the concentration of 8wt% with the mixture obtained in the step (1), and then cold pressing; the polyvinyl alcohol is 1wt% of the mixture; the pressure of the cold pressing is 40MPa, and the pressure maintaining time is 2min;
(3) Carrying out pressureless sintering after cold pressing, and carrying out furnace-following cooling after pressureless sintering to obtain the molybdenum tantalum oxide target; the pressureless sintering is carried out in a protective atmosphere, and the absolute pressure of the pressureless sintering is 50Pa; the temperature rising rate of the pressureless sintering is 5 ℃/min, the temperature is 600 ℃, and the heat preservation time is 8h.
Example 4
This example provides a method for preparing a molybdenum tantalum oxide target, which is the same as example 1 except that the pressureless sintering temperature is 640 ℃.
Example 5
This example provides a method for preparing a molybdenum tantalum oxide target, which is the same as example 1 except that the pressureless sintering temperature is 660 ℃.
Example 6
This example provides a method for preparing a molybdenum tantalum oxide target, which is the same as example 1 except that the pressureless sintering temperature is 700 ℃.
Example 7
The present example provides a method for preparing a molybdenum tantalum oxide target, which is the same as example 1 except that the pressureless sintering temperature rising rate in step (3) is 1 ℃/min.
Example 8
The present example provides a method for preparing a molybdenum tantalum oxide target, which is the same as example 1 except that the pressureless sintering temperature rising rate in step (3) is 6 ℃/min.
Example 9
The present embodiment provides a method for preparing a molybdenum tantalum oxide target, which is the same as that of embodiment 1 except that the pressureless sintering in step (3) has a heat preservation time of 6 hours.
Example 10
The present example provides a method for preparing a molybdenum tantalum oxide target, which is the same as example 1 except that the polyvinyl alcohol in step (2) is 0.1wt% of the mixture.
Example 11
The present example provides a method for preparing a molybdenum tantalum oxide target, which is the same as example 1 except that the polyvinyl alcohol in step (2) is 1.1wt% of the mixture.
Example 12
The present example provides a method for preparing a molybdenum tantalum oxide target, which is the same as example 1 except that the mass of molybdenum trioxide powder is 80wt% of the mixture.
Example 13
The present example provides a method for preparing a molybdenum tantalum oxide target, which is the same as example 1 except that the mass of molybdenum trioxide powder is 95wt% of the mixture.
Comparative example 1
The comparative example provides a preparation method of a molybdenum tantalum oxide target, which comprises the following steps:
(1) Uniformly mixing molybdenum trioxide powder with the particle size D50 of 8 mu m and tantalum powder with the particle size D50 of 30 mu m to obtain a mixture; the mass of the molybdenum trioxide powder is 90wt% of the mixture;
(2) Cold pressing the mixture obtained in the step (1); the pressure of the cold pressing is 30MPa, and the pressure maintaining time is 4min;
(3) Carrying out pressureless sintering after cold pressing, and carrying out furnace-following cooling after pressureless sintering to obtain the molybdenum tantalum oxide target; the pressureless sintering is carried out in a protective atmosphere, and the absolute pressure of the pressureless sintering is 50Pa; the temperature rising rate of the pressureless sintering is 4 ℃/min, the temperature is 580 ℃, and the heat preservation time is 12h.
Comparative example 2
The comparative example provides a preparation method of a molybdenum tantalum oxide target, which comprises the following steps:
(1) Uniformly mixing molybdenum trioxide powder with the particle size D50 of 8 mu m and tantalum powder with the particle size D50 of 30 mu m to obtain a mixture; the mass of the molybdenum trioxide powder is 90wt% of the mixture;
(2) Cold pressing the mixture obtained in the step (1); the pressure of the cold pressing is 30MPa, and the pressure maintaining time is 4min;
(3) Carrying out pressureless sintering after cold pressing, and carrying out furnace-following cooling after pressureless sintering to obtain the molybdenum tantalum oxide target; the pressureless sintering is carried out in a protective atmosphere, and the absolute pressure of the pressureless sintering is 50Pa; the temperature rising rate of the pressureless sintering is 4 ℃/min, the temperature is 660 ℃, and the heat preservation time is 12h.
The compactness of the molybdenum tantalum oxide targets provided in examples 1-11 and comparative examples 1-2 was tested and the results obtained are shown in table 1.
TABLE 1
Density (%)
Example 1 99.8
Example 2 99.7
Example 3 99.6
Example 4 99.7
Example 5 99.6
Example 6 99.5
Example 7 99.8
Example 8 99.5
Example 9 99.5
Example 10 99.3
Example 11 99.0
Example 12 99.8
Example 13 99.8
Comparative example 1 99.1
Comparative example 2 99.2
In summary, the preparation method provided by the invention enhances the bonding strength between particles through the use of the binder; cold pressing to obtain a green body with regular shape and higher density; and then adopting a pressureless sintering mode to prepare the molybdenum-tantalum oxide target, so that the problem of low density caused by sublimation of molybdenum oxide at high temperature is avoided.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be had by the present invention, it should be understood that the foregoing description is merely illustrative of the present invention and that no limitations are intended to the scope of the invention, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the invention.

Claims (10)

1. The preparation method of the molybdenum tantalum oxide target material is characterized by comprising the following steps:
(1) Uniformly mixing molybdenum trioxide powder and tantalum powder to obtain a mixture;
(2) Uniformly mixing the binder solution and the mixture obtained in the step (1), and then cold pressing;
(3) And (5) performing pressureless sintering after cold pressing to obtain the molybdenum oxide tantalum target.
2. The method of claim 1, wherein the cold pressing in step (2) is performed at a pressure of 20-40MPa;
preferably, the dwell time of the cold pressing of step (2) is 2-5min.
3. The method according to claim 1 or 2, wherein the absolute pressure of the pressureless sintering in step (3) is 50Pa or less.
4. A method according to any one of claims 1 to 3, wherein the pressureless sintering in step (3) has a rate of rise of 2 to 5 ℃/min;
preferably, the pressureless sintering temperature in step (3) is 550-700 ℃;
preferably, the pressureless sintering in step (3) has a holding time of 8-15 hours.
5. The method of any one of claims 1-4, wherein the binder solution of step (2) comprises a polyvinyl alcohol solution;
preferably, the concentration of the polyvinyl alcohol solution is 3 to 8wt%.
6. The method according to any one of claims 1 to 5, wherein the binder in the binder solution in step (2) is 0.2 to 1wt% of the mixture.
7. The method according to any one of claims 1 to 6, wherein the molybdenum trioxide powder in step (1) has a particle diameter D50 of 5 to 10 μm;
preferably, the particle size D50 of the tantalum powder in the step (1) is 20-40 mu m;
preferably, the mass of the molybdenum trioxide powder in the step (1) is 80-95wt% of the mixture.
8. The method according to any one of claims 1 to 7, wherein the molybdenum trioxide powder of step (1) is obtained by calcination of ammonium molybdate.
9. A molybdenum tantalum oxide target, characterized in that the molybdenum tantalum oxide target is prepared by the preparation method of any one of claims 1-8.
10. Use of a molybdenum tantalum oxide target according to any of claims 1-8 for magnetron sputtering.
CN202310318909.0A 2023-03-29 2023-03-29 Molybdenum oxide tantalum target material and preparation method and application thereof Pending CN116332645A (en)

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CN116813346A (en) * 2023-08-17 2023-09-29 宁波江丰电子材料股份有限公司 Preparation method and application of niobium oxide target
CN116813342A (en) * 2023-06-30 2023-09-29 宁波江丰电子材料股份有限公司 Preparation method of high-density molybdenum tantalum oxide target
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CN112110721A (en) * 2020-09-21 2020-12-22 先导薄膜材料（广东）有限公司 Preparation method of indium tin tantalum oxide target material
CN114875369A (en) * 2022-05-12 2022-08-09 宁波江丰电子材料股份有限公司 Low-oxygen tantalum target material and preparation method thereof

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CN103626495A (en) * 2013-11-27 2014-03-12 中国科学院上海硅酸盐研究所 Preparation method for CIGS target material through pressureless sintering
CN112110721A (en) * 2020-09-21 2020-12-22 先导薄膜材料（广东）有限公司 Preparation method of indium tin tantalum oxide target material
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CN116813342A (en) * 2023-06-30 2023-09-29 宁波江丰电子材料股份有限公司 Preparation method of high-density molybdenum tantalum oxide target
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