CN116322165B - Pixel structure, display panel and display panel preparation method - Google Patents
Pixel structure, display panel and display panel preparation method Download PDFInfo
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- CN116322165B CN116322165B CN202310519906.3A CN202310519906A CN116322165B CN 116322165 B CN116322165 B CN 116322165B CN 202310519906 A CN202310519906 A CN 202310519906A CN 116322165 B CN116322165 B CN 116322165B
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Abstract
The application provides a pixel structure, a display panel and a display panel preparation method, and relates to the technical field of display, wherein the pixel structure comprises at least one target sub-pixel, and the luminous efficiency of the target sub-pixel is lower than that of the sub-pixel with the highest luminous efficiency in the pixel structure. The target sub-pixel comprises an anode unit, a light emitting layer, a first cathode unit, a second cathode unit, a pixel definition layer, a first conductive unit and a first eave structure; the first eave structure is positioned on one side, away from the anode unit, above the first conductive unit; the first cathode unit is positioned above the anode unit, the second cathode unit is positioned above the first conductive unit, and the first cathode unit is not communicated with the second cathode unit; one end of the first cathode unit, which is far away from the first eave structure, is overlapped with the first conductive unit of the adjacent sub-pixel; the second cathode unit, the light emitting layer and the first conductive unit form a compensation pixel. The technical scheme that this application provided can promote display panel's display effect.
Description
Technical Field
The application relates to the technical field of display, in particular to a pixel structure, a display panel and a display panel preparation method.
Background
Display panels based on light emitting devices such as organic light emitting diodes (Organic Light Emitting Diode, OLEDs) are increasingly being used in products such as televisions and cellular phones because of their light weight, energy saving, wide viewing angle, wide color gamut, and high contrast.
The display panel comprises a series of pixels, each pixel generally comprises 3 red, green and blue sub-pixels, wherein, as the luminous efficiency of the blue sub-pixels is lower than that of the red and green sub-pixels, the current required by the blue sub-pixels is higher during color matching, and the line voltage drop of the corresponding blue sub-pixels is larger, so that the brightness difference of the blue sub-pixels of the display panel is larger.
Disclosure of Invention
In view of this, the present application provides a pixel structure, a display panel and a method for manufacturing a display panel, which are used for reducing the brightness difference of each blue sub-pixel of the display panel and improving the display effect of the display panel.
To achieve the above object, in a first aspect, an embodiment of the present application provides a pixel structure, including:
a plurality of sub-pixels, wherein the plurality of sub-pixels comprise at least one target sub-pixel, and the luminous efficiency of the target sub-pixel is lower than that of the sub-pixel with highest luminous efficiency in the pixel structure;
the target sub-pixel comprises an anode unit, a light emitting layer, a first cathode unit, a second cathode unit, a pixel definition layer, a first conductive unit and a first eave structure;
the pixel definition layer is arranged around the anode unit, the first conductive unit is positioned above the pixel definition layer, and the first eave structure is positioned on one side, away from the anode unit, above the first conductive unit;
the light-emitting layer covers the anode unit, the pixel definition layer, the first conductive unit and the first eave structure;
the first cathode unit is positioned above the anode unit, the second cathode unit is positioned above the first conductive unit, and the first cathode unit and the second cathode unit are not communicated; one end of the first cathode unit, which is far away from the first eave structure, is overlapped with the first conductive unit of the adjacent sub-pixel;
the first cathode unit, the light emitting layer, and the anode unit form a display pixel; the second cathode unit, the light emitting layer and the first conductive unit form a compensation pixel;
the brightness of the compensation pixel far away from the target driving power supply is higher than that of the compensation pixel close to the target driving power supply, and the target driving power supply is the driving power supply of the display pixel of the target sub-pixel.
As an alternative implementation manner of the embodiment of the present application, an insulating column is disposed between the first cathode unit and the second cathode unit.
As an alternative implementation manner of the embodiment of the present application, a region of the second cathode unit near one side of the first cathode unit is etched.
As an alternative implementation of the embodiment of the present application, the second cathode unit covers a side of the first conductive unit close to the anode unit.
As an optional implementation manner of this embodiment of the present application, a second conductive unit is further disposed above the first eave structure, a second eave structure is disposed above the second conductive unit, and the second cathode unit is overlapped with the second conductive unit.
As an optional implementation manner of this embodiment of the present application, all the sub-pixels except the sub-pixel with the highest luminous efficiency in the pixel structure are the target sub-pixels.
As an optional implementation manner of the embodiment of the present application, the pixel structure includes a red sub-pixel, a blue sub-pixel, and a green sub-pixel, where the blue sub-pixel is the target sub-pixel.
As an alternative implementation of the embodiment of the present application, the compensation pixel is a ring-shaped structure disposed around the display pixel.
In a second aspect, embodiments of the present application provide a display panel, including: a substrate, a driving layer, an encapsulation layer, and a plurality of pixel structures as described in the first aspect or any one of the first aspects, wherein the pixel structures are located between the driving layer and the encapsulation layer.
As an optional implementation manner of this embodiment of the present application, the display panel includes a plurality of partitions, and the brightness of the compensation pixels in the same partition is the same, and the brightness of the compensation pixels in the partition far from the target driving power supply of the display panel is higher than the brightness of the compensation pixels in the partition near to the target driving power supply.
In a third aspect, an embodiment of the present application provides a method for preparing a display panel according to the second aspect or any one of the second aspects, where the method includes:
forming a driving layer on a substrate base plate, and forming each anode unit on the driving layer;
forming a pixel defining layer around each anode unit, forming each first conductive unit above the pixel defining layer, and forming a first eave structure above each first conductive unit;
forming a light emitting layer over the anode unit, the pixel defining layer, the first conductive unit, and the first eave structure;
forming a first cathode unit over the light emitting layer in a region corresponding to each of the anode units, and forming a second cathode unit over the light emitting layer in a region corresponding to each of the first conductive units;
and forming an encapsulation layer on the upper surfaces of the first cathode unit, the second cathode unit and the first eave structure.
According to the technical scheme, each pixel structure comprises a plurality of sub-pixels, each sub-pixel comprises at least one target sub-pixel, and the luminous efficiency of each target sub-pixel is lower than that of the sub-pixel with the highest luminous efficiency in the pixel structure. The target sub-pixel comprises an anode unit, a light emitting layer, a first cathode unit, a second cathode unit, a pixel definition layer, a first conductive unit and a first eave structure. The pixel definition layer is arranged around the anode unit, the first conductive unit is positioned above the pixel definition layer, and the first eave structure is positioned on one side, away from the anode unit, above the first conductive unit; the light-emitting layer covers the anode unit, the pixel definition layer, the first conductive unit and the first eave structure; the first cathode unit is positioned above the anode unit, the second cathode unit is positioned above the first conductive unit, and the first cathode unit is not communicated with the second cathode unit; one end of the first cathode unit, which is far away from the first eave structure, is overlapped with the first conductive unit of the adjacent sub-pixel; the first cathode unit, the light-emitting layer and the anode unit form display pixels, and the second cathode unit, the light-emitting layer and the first conductive unit form compensation pixels; the brightness of the compensation pixel far from the target driving power source is higher than the brightness of the compensation pixel close to the target driving power source, wherein the target driving power source is the driving power source of the display pixel of the target sub-pixel. In the above technical solution, the first conductive unit is multiplexed to form the compensation pixel with the light emitting layer and the second cathode unit above the first conductive unit, and the brightness of each compensation pixel is adjusted according to the distance between each compensation pixel and the target driving power source (i.e., the distance between each target subpixel and the target driving power source), so as to compensate the light emitting brightness of the display pixel of each target subpixel to different extents (the farther from the target driving power source, the more the compensation is), thereby improving the light emitting brightness of each target subpixel and reducing the brightness difference between each target subpixel.
Drawings
Fig. 1 is a top view of a pixel structure in a display panel according to an embodiment of the disclosure;
FIG. 2 is a cross-sectional view of the display panel along the direction A-A' in FIG. 1;
FIG. 3 is another cross-sectional view of the display panel along the direction A-A' in FIG. 1;
fig. 4 is a top view of a pixel structure in another display panel according to an embodiment of the disclosure;
FIG. 5 is a cross-sectional view of the display panel along the direction B-B' in FIG. 3;
fig. 6 is a schematic flow chart of a method for manufacturing a display panel according to an embodiment of the present application.
Reference numerals illustrate:
10-a substrate base; 20-a driving layer;
a 30-pixel structure; 40-packaging layer;
31-target subpixels;
311-anode unit; 312-a light emitting layer;
313-a pixel definition layer; 314-a first conductive element;
315-a first eave structure; 316-a first cathode unit;
317-a second cathode unit; 318-insulating columns;
319-a second conductive element; 320-a second eave structure;
321-a third eave structure; 322-a light emitting unit;
323-channel; 324-third cathode unit.
Detailed Description
Embodiments of the present application are described below with reference to the accompanying drawings in the embodiments of the present application. The terminology used in the description of the embodiments of the application is for the purpose of describing particular embodiments of the application only and is not intended to be limiting of the application. The following embodiments may be combined with each other, and some embodiments may not be repeated for the same or similar concepts or processes.
Fig. 1 is a top view of a pixel structure in a display panel according to an embodiment of the present application, and fig. 2 is a cross-sectional view of the display panel along a direction A-A' in fig. 1, as shown in fig. 1 and fig. 2, where the display panel according to an embodiment of the present application may include a substrate 10, a driving layer 20, a pixel structure 30, and an encapsulation layer 40 disposed from bottom to top.
The substrate 10 may be a rigid substrate or a flexible substrate, the material of the rigid substrate may be glass, and the material of the flexible substrate may be a polymer material such as polyimide.
The driving layer 20 is disposed above the substrate 10 and may include a plurality of thin film transistors (Thin Film Transistor, TFT) for driving the pixel structure 30 to emit light. The pixel structure 30 may include a plurality of sub-pixels, and is exemplified herein by the pixel structure 30 including a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B. The plurality of sub-pixels may include at least one target sub-pixel 31, and the target sub-pixel 31 has a lower luminous efficiency than the sub-pixel having the highest luminous efficiency in the pixel structure 30. Since the red sub-pixel R has higher luminous efficiency than the green sub-pixel G and the blue sub-pixel B, the target sub-pixel 31 in the pixel structure 30 may be the green sub-pixel G and the blue sub-pixel B, and the target sub-pixel 31 is exemplified as the blue sub-pixel B.
The target subpixel 31 may be a subpixel of other colors such as yellow, white, and purple, and the color of the target subpixel 31 is not particularly limited in this application.
The target subpixel 31 may include an anode unit 311, a light emitting layer 312, a pixel defining layer 313, a first conductive unit 314, a first eave structure 315, a first cathode unit 316, and a second cathode unit 317.
The anode unit 311 is disposed above the driving layer 20, and the material of the anode unit 311 may be a metal, for example, al (aluminum), au (gold), ag (silver), cu (copper), etc., and the material of the anode unit 311 may also be a conductive metal oxide, for example, indium Tin Oxide (ITO), etc.
The pixel defining layer 313 is disposed around the anode unit 311. The material of the pixel defining layer 313 may be organic polyimide, or may be inorganic SiNx, siOx, siOxNx, or the like.
The first conductive unit 314 is located above the pixel defining layer 313, and is configured to output a fixed voltage to the cathode layer of the adjacent sub-pixel (or the second cathode unit 317 of the adjacent target sub-pixel 31) to reduce the voltage drop generated by the routing of the cathode layer, where the material of the first conductive unit 314 may be copper, silver, or other metals.
A first eave structure 315 is disposed above the first conductive unit 314, and the first eave structure 315 is located on a side, away from the anode unit 311, above the first conductive unit 314. The first eave structure 315 is used for protecting the overlapping area of the cathode layer of the adjacent sub-pixel (the second cathode unit 317 of the adjacent target sub-pixel 31 may also be) and the first conductive unit 314 during maskless evaporation, so that the overlapping area of the cathode layer of the adjacent sub-pixel and the first conductive unit 314 is not affected by etching liquid during photolithography patterning.
The light emitting layer 312 covers over the anode unit 311, the pixel defining layer 313, the first conductive unit 314, and the first eave structure 315, and the light emitting layer 312 may include light emitting materials of various colors of red, green, blue, yellow, violet, and the like.
The first cathode unit 316 is located above the anode unit 311, the second cathode unit 317 is located above the first conductive unit 314, and the material of the first cathode unit 316 may be a metal material such as aluminum, gold, silver, copper, etc., and the material of the first cathode unit 316 may also be a transparent conductive metal oxide, etc. The material of the second cathode unit 317 may be the same as that of the first cathode unit 316.
One end of the first cathode unit 316, which is far from the first eave structure 315, is overlapped with the first conductive unit 314 of the adjacent sub-pixel.
The first cathode unit 316, the light emitting layer 312, and the anode unit 311 form a display pixel, and the second cathode unit 317, the light emitting layer 312, and the first conductive unit 314 form a compensation pixel. The compensation pixels may be disposed in a portion of the orientations around the display pixels.
The luminance of the compensation pixel far from the target driving power source, which is the driving power source of the display pixel of the target sub-pixel 31, may be higher than the luminance of the compensation pixel close to the target driving power source.
By multiplexing the first conductive unit 314, the compensation pixel is formed with the light emitting layer 312 and the second cathode unit 317 above the first conductive unit 314, and the brightness of each compensation pixel is adjusted according to the distance between each compensation pixel and the target driving power source (i.e., the distance between each target subpixel and the target driving power source), so as to compensate the light emitting brightness of the display pixel of each target subpixel to different extents (the farther from the target driving power source, the more the compensation is), thereby improving the light emitting brightness of each target subpixel and reducing the brightness difference between each target subpixel.
The display panel can be further provided with a plurality of partitions, the brightness of the compensation pixels in the same partition can be the same, and the brightness of the compensation pixels in the partition far away from the target driving power supply can be higher than the brightness of the compensation pixels in the partition close to the target driving power supply, so that the compensation pixels in the same partition can share one driving power supply, the number of the driving power supplies of the compensation pixels in the display panel can be reduced, and the complexity of the display panel is reduced.
It can be understood that the scheme can also be adopted to compensate for other sub-pixels except for the sub-pixel with the highest luminous efficiency in the display panel, so that the luminous brightness of the sub-pixels with the same color tends to be consistent, and the display effect of the display panel is further improved.
In addition, in the use process of the display panel, the attenuation degree of the light-emitting brightness of different sub-pixels is also different, so that the attenuation proportion of the light-emitting brightness of each target sub-pixel 31 can be determined at intervals according to the light-emitting brightness of each target sub-pixel 31, and the compensation pixel of each target sub-pixel 31 can be adjusted according to the attenuation proportion of the light-emitting brightness of each target sub-pixel 31, so that the brightness of each target sub-pixel 31 can be compensated, and the color cast problem of the white picture of the display panel after long-time use can be improved.
The first cathode unit 316 and the second cathode unit 317 may not communicate. By controlling the compensation pixels individually, brightness compensation of different degrees for the target sub-pixel 31 can be achieved, thereby achieving a more accurate compensation effect.
Specifically, the first cathode unit 316 and the second cathode unit 317 may be disconnected by providing an insulating column 318 between the first cathode unit 316 and the second cathode unit 317 as shown in fig. 2.
The cross section of the insulating column 318 may be circular or elliptical, or may be triangular or quadrangular. The projection of the upper end surface of the insulating column 318 onto the substrate 10 may overlap with the projection of the lower end surface thereof onto the substrate 10, or may be located within the projection of the lower end surface thereof onto the substrate 10.
The insulating column 318 may be disposed on a side of the first conductive unit 314 close to the anode unit 311, and the insulating column 318 may be disposed over the pixel defining layer 313 between the first conductive unit 314 and the anode unit 311 (where the second cathode unit 317 covers a side of the first conductive unit 314 close to the anode unit 311) to increase an aperture ratio of the compensation pixel.
In addition, the first cathode unit 316 and the second cathode unit 317 may be disconnected by etching a region of the second cathode unit 317 near the first cathode unit 316 during the manufacturing process, and the etched region of the second cathode unit 317 may be located above the pixel defining layer 313 between the first conductive unit 314 and the anode unit 311.
The encapsulation layer 40 may be disposed over the pixel structure 30, and the material of the encapsulation layer 40 may include silicon nitride, silicon oxynitride, or a combination thereof.
Fig. 3 is another cross-sectional view of the display panel along the direction A-A' in fig. 1, as shown in fig. 3, a second conductive unit 319 may be further disposed above the first eave structure 315, where the second conductive unit 319 may output a fixed voltage to the second cathode unit 317 to reduce a voltage drop generated by the wiring of the second cathode unit 317, and the material of the second conductive unit 319 may be copper, silver, or other metals.
A second eave structure 320 may be disposed above the second conductive unit 319, and the second cathode unit 317 overlaps the second conductive unit 319. The second eave structure 320 is used for protecting the overlapping area of the second cathode unit 317 and the second conductive unit 319 during maskless evaporation, so that the overlapping area of the second cathode unit 317 and the second conductive unit 319 is not affected by etching liquid during photolithography patterning.
Fig. 4 is a top view of a pixel structure in another display panel provided in this embodiment, and fig. 5 is a cross-sectional view of the display panel along the direction B-B' in fig. 4, as shown in fig. 4 and fig. 5, the compensation pixels may also have a ring structure around the display pixels, so that the opening ratio of the compensation pixels is maximized, thereby achieving a better compensation effect.
Specifically, a third eave structure 321 may be further disposed on the first conductive unit 314 above the pixel defining layer 313 corresponding to the side of the anode unit 311 away from the second cathode unit 317, a light emitting unit 322 may be disposed on the upper surface of the third eave structure 321, a channel 323 may be disposed above the third eave structure 321, and the light emitting unit 322 contacts with the corresponding first conductive unit 314 through the corresponding channel 323.
The channel 323 may be formed in the middle of the third eave structure 321, or may be formed in another position above the third eave structure, which is not limited in this embodiment.
The upper surface of the light emitting unit 322 may be covered with the third cathode unit 324, and the light emitting unit 322 and the corresponding first conductive unit 314 and third cathode unit 324 may form new compensation pixels, so that the compensation pixels at the periphery of the display pixels may form a ring structure around the display pixels.
Fig. 6 is a schematic flow chart of a method for manufacturing a display panel according to an embodiment of the present application, and as shown in fig. 6, the method for manufacturing a display panel according to an embodiment of the present application may include the following steps:
s110, forming a driving layer on the substrate base plate, and forming each anode unit on the driving layer.
Specifically, the driving layer 20 may be formed on the base substrate 10 first, and then each anode unit 311 may be formed on the driving layer 20 through a sputtering process.
S120, forming a pixel definition layer around each anode unit, forming each first conductive unit above the pixel definition layer, and forming a first eave structure and a third eave structure above each first conductive unit.
Specifically, a pixel defining layer 313 may be formed around each anode unit 311 using a plasma enhanced chemical vapor deposition, sputtering, atomic layer deposition, etc., and then each first conductive unit 314 of the pixel defining layer 313 may be formed over each first conductive unit 314 by a sputtering process, and then a first eave structure 315 and a third eave structure 321 may be formed over each first conductive unit 314, wherein the first eave structure 315 is located on a side of the corresponding first conductive unit 314 away from the anode unit 311.
S130, forming a light emitting layer above the anode units, the pixel defining layer, the first conductive units and the first eave structure 315, forming a first cathode unit above the light emitting layer in a region corresponding to each anode unit, and forming a second cathode unit above the light emitting layer in a region corresponding to each first conductive unit.
Specifically, the light emitting layer 312 may be formed at an area where the anode unit 311, the pixel defining layer 313, the first conductive unit 314, and the first eave structure 315 are not covered using an evaporation process. A cathode layer may then be formed over the light emitting layer 312 using an evaporation process, and then the cathode layer over the pixel defining layer 313 between the first conductive unit 314 and the anode unit 311 is etched to form a first cathode unit 316 and a second cathode unit 317 that are not connected to each other.
An insulating column 318 may be further provided between the first cathode unit 316 and the second cathode unit 317 to prevent the first cathode unit 316 and the second cathode unit 317 from communicating.
S140, forming a channel above the third eave structure, forming a light-emitting unit above the channel and the third eave structure, and forming a third cathode unit above the light-emitting unit.
Specifically, the third eave structure 321 may be etched to form a channel 323 over the third eave structure 321, and then a light emitting unit 322 and a third cathode unit 324 may be sequentially formed over the channel 323 and the third eave structure 321 using an evaporation process, and the light emitting unit 322 may be in contact with the corresponding first conductive unit 314.
S150, forming a second conductive unit above the first eave structure, and forming a second eave structure on the second conductive unit.
Specifically, the second conductive units 319 may be formed over the first eave structure 315 such that each second cathode unit 317 overlaps a corresponding second conductive unit 319, and then the second eave structure 320 is formed on each second conductive unit 319.
S160, forming an encapsulation layer on the upper surfaces of the first cathode unit, the second cathode unit, the third cathode unit and the third eave structure.
Specifically, the encapsulation layer 40 may be formed on the upper surfaces of the first cathode unit 316, the second cathode unit 317, the third cathode unit 324, and the third eave structure 321 using a plasma enhanced chemical vapor deposition, a sputtering, an atomic layer deposition, or the like.
According to the technical scheme, each pixel structure comprises a plurality of sub-pixels, each sub-pixel comprises at least one target sub-pixel, and the luminous efficiency of each target sub-pixel is lower than that of the sub-pixel with the highest luminous efficiency in the pixel structure. The target sub-pixel comprises an anode unit, a light emitting layer, a first cathode unit, a second cathode unit, a pixel definition layer, a first conductive unit and a first eave structure. The pixel definition layer is arranged around the anode unit, the first conductive unit is positioned above the pixel definition layer, and the first eave structure is positioned on one side, away from the anode unit, above the first conductive unit; the light-emitting layer covers the anode unit, the pixel definition layer, the first conductive unit and the first eave structure; the first cathode unit is positioned above the anode unit, the second cathode unit is positioned above the first conductive unit, and the first cathode unit is not communicated with the second cathode unit; one end of the first cathode unit, which is far away from the first eave structure, is overlapped with the first conductive unit of the adjacent sub-pixel; the first cathode unit, the light-emitting layer and the anode unit form display pixels, and the second cathode unit, the light-emitting layer and the first conductive unit form compensation pixels; the brightness of the compensation pixel far from the target driving power source is higher than the brightness of the compensation pixel close to the target driving power source, wherein the target driving power source is the driving power source of the display pixel of the target sub-pixel. In the above technical solution, the first conductive unit is multiplexed to form the compensation pixel with the light emitting layer and the second cathode unit above the first conductive unit, and the brightness of each compensation pixel is adjusted according to the distance between each compensation pixel and the target driving power source (i.e., the distance between each target subpixel and the target driving power source), so as to compensate the light emitting brightness of the display pixel of each target subpixel to different extents (the farther from the target driving power source, the more the compensation is), thereby improving the light emitting brightness of each target subpixel and reducing the brightness difference between each target subpixel.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and in part, not described or illustrated in any particular embodiment, reference is made to the related descriptions of other embodiments.
In addition, the dimensional relationships between the components in the drawings are merely illustrative, and do not reflect actual dimensional relationships between the components.
In the description of the present application, the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus are not to be construed as limiting the present invention.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art in a specific case.
It should be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
In the description of the present application, unless otherwise indicated, "/" means that the associated object is an "or" relationship, e.g., a/B may represent a or B; the term "and/or" in this application is merely an association relation describing an association object, and means that three kinds of relations may exist, for example, a and/or B may mean: there are three cases, a alone, a and B together, and B alone, wherein a, B may be singular or plural.
Also, in the description of the present application, unless otherwise indicated, "a plurality" means two or more than two. "at least one of the following" or similar expressions thereof, means any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c may represent: a, b, c, a-b, a-c, b-c, or a-b-c, wherein a, b, c may be single or plural.
Furthermore, in the description of the present application and the appended claims, the terms "first," "second," "third," and the like are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments described herein may be implemented in other sequences than those illustrated or otherwise described herein.
Reference in the specification to "one embodiment" or "some embodiments" or the like means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," and the like in the specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments" unless expressly specified otherwise.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.
Claims (10)
1. A pixel structure, comprising: a plurality of sub-pixels, wherein the plurality of sub-pixels comprise at least one target sub-pixel, and the luminous efficiency of the target sub-pixel is lower than that of the sub-pixel with highest luminous efficiency in the pixel structure;
the target sub-pixel comprises an anode unit, a light emitting layer, a first cathode unit, a second cathode unit, a pixel definition layer, a first conductive unit and a first eave structure;
the pixel definition layer is arranged around the anode unit, the first conductive unit is positioned above the pixel definition layer, and the first eave structure is positioned on one side, away from the anode unit, above the first conductive unit;
the light-emitting layer covers the anode unit, the pixel definition layer, the first conductive unit and the first eave structure;
the first cathode unit is positioned above the anode unit, the second cathode unit is positioned above the first conductive unit, and the first cathode unit and the second cathode unit are not communicated; one end of the first cathode unit, which is far away from the first eave structure, is overlapped with the first conductive unit of the adjacent sub-pixel;
the first cathode unit, the light emitting layer, and the anode unit form a display pixel; the second cathode unit, the light emitting layer and the first conductive unit form a compensation pixel;
the brightness of the compensation pixel far away from the target driving power supply is higher than that of the compensation pixel close to the target driving power supply, and the target driving power supply is the driving power supply of the display pixel of the target sub-pixel.
2. The pixel structure according to claim 1, wherein an insulating column is provided between the first cathode unit and the second cathode unit.
3. The pixel structure according to claim 1, wherein a region of the second cathode unit adjacent to a side of the first cathode unit is etched.
4. The pixel structure according to claim 1, wherein the second cathode unit covers a side of the first conductive unit near the anode unit.
5. The pixel structure of claim 1, wherein a second conductive element is further disposed above the first eave structure, a second eave structure is disposed above the second conductive element, and the second cathode element overlaps the second conductive element.
6. The pixel structure according to claim 1, wherein all the other sub-pixels except the sub-pixel with the highest luminous efficiency in the pixel structure are the target sub-pixels.
7. A pixel structure according to any one of claims 1-6, wherein the compensation pixels are ring-shaped structures arranged around the display pixels.
8. A display panel, comprising: a substrate, a driving layer, an encapsulation layer, and a plurality of pixel structures as claimed in any one of claims 1 to 7, arranged from bottom to top, the pixel structures being located between the driving layer and the encapsulation layer.
9. The display panel according to claim 8, wherein the display panel includes a plurality of partitions, and the brightness of the compensation pixels in the same partition is the same, and the brightness of the compensation pixels in the partition distant from the target drive power source of the display panel is higher than the brightness of the compensation pixels in the partition close to the target drive power source.
10. A method for manufacturing a display panel according to claim 8 or 9, wherein the method comprises:
forming a driving layer on a substrate base plate, and forming each anode unit on the driving layer;
forming a pixel defining layer around each anode unit, forming each first conductive unit above the pixel defining layer, and forming a first eave structure above each first conductive unit;
forming a light emitting layer over the anode unit, the pixel defining layer, the first conductive unit, and the first eave structure;
forming a first cathode unit over the light emitting layer in a region corresponding to each of the anode units, and forming a second cathode unit over the light emitting layer in a region corresponding to each of the first conductive units;
and forming an encapsulation layer on the upper surfaces of the first cathode unit, the second cathode unit and the first eave structure.
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