CN116318202A - Interference device for radio frequency front-end circuit with limiter - Google Patents
Interference device for radio frequency front-end circuit with limiter Download PDFInfo
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- CN116318202A CN116318202A CN202310300401.8A CN202310300401A CN116318202A CN 116318202 A CN116318202 A CN 116318202A CN 202310300401 A CN202310300401 A CN 202310300401A CN 116318202 A CN116318202 A CN 116318202A
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- 238000010168 coupling process Methods 0.000 claims abstract description 14
- 238000005859 coupling reaction Methods 0.000 claims abstract description 14
- 230000000694 effects Effects 0.000 claims description 13
- 230000004044 response Effects 0.000 claims description 9
- 230000003595 spectral effect Effects 0.000 claims 1
- 230000000670 limiting effect Effects 0.000 abstract description 9
- 239000000969 carrier Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
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- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B1/0475—Circuits with means for limiting noise, interference or distortion
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0416—Circuits with power amplifiers having gain or transmission power control
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
Abstract
The application belongs to the technical field of receivers, and discloses an interference device for a radio frequency front-end circuit with a limiter, wherein the device comprises: the ultra-wideband pulse generator, the transmitting antenna, the coupling antenna, the diode limiter and the radio frequency front-end circuit are sequentially connected; the ultra-wideband pulse generator is used for generating ultra-wideband electromagnetic pulses and transmitting the ultra-wideband electromagnetic pulses to the transmitting antenna; the transmitting antenna is used for transmitting the received ultra-wideband electromagnetic pulse to the coupling antenna; the coupling antenna is used for receiving the ultra-wideband electromagnetic pulse and sending the ultra-wideband electromagnetic pulse to the diode limiter; the diode limiter is used for receiving the ultra-wideband electromagnetic pulse and generating peak leakage so that the ultra-wideband electromagnetic pulse enters the radio frequency front-end circuit. The ultra-wideband electromagnetic pulse power amplifier can enable the diode limiter to generate peak leakage and lose the limiting capacity, so that the ultra-wideband electromagnetic pulse smoothly enters a radio frequency front-end circuit and generates interference.
Description
Technical Field
The present disclosure relates to the field of receiver technologies, and in particular, to an interference device for a radio frequency front-end circuit with a limiter.
Background
In the design of a radio receiver in the satellite navigation field, the burn-out resistance is often taken into consideration, which is to prevent high-power signals from directly reaching a radio frequency front-end circuit of the receiver and burning out sensitive devices in the radio frequency front-end circuit, so that the burn-out resistance needs to be added before the radio frequency front-end circuit is subjected to low noise. The limiter is used as the most powerful protection means of the radio frequency front-end circuit and is usually arranged at the front stage of the low-noise amplifier so as to ensure that the low-noise amplifier is not affected by the interference pulse. The most used limiter is a PIN diode limiter at present, and the limiter can well reduce the power of interference pulses, so that the influence of the limiter on a subsequent circuit is reduced, and the anti-interference purpose is achieved. A common interfering technology is high power microwave pulsing (HPM). The high-power microwave is a carrier modulated narrow-band pulse, generally referred to as a transient electromagnetic wave with a peak power of the microwave source greater than 100MW, and has extremely high pulse peak power, so that the high-power microwave has extremely high harm to various electronic devices and systems.
In recent years, as the limiting circuit is continuously optimized, the protection of the diode limiter on the HPM pulse is more and more perfect, so that the HPM pulse interference effect is greatly reduced. Therefore, the problem of poor interference effect of HPM pulse on the radio frequency front-end circuit with the diode limiter exists in the prior art.
Disclosure of Invention
The application provides an interference device for a radio frequency front-end circuit with a limiter, which can enable the diode limiter to generate peak leakage and lose the limiting capacity, so that ultra-wideband electromagnetic pulse smoothly enters the radio frequency front-end circuit and generates interference.
The embodiment of the application provides an interference device for a radio frequency front-end circuit with a limiter, which comprises:
the ultra-wideband pulse generator, the transmitting antenna, the coupling antenna, the diode limiter and the radio frequency front-end circuit are sequentially connected;
the ultra-wideband pulse generator is used for generating ultra-wideband electromagnetic pulses and transmitting the ultra-wideband electromagnetic pulses to the transmitting antenna; the transmitting antenna is used for transmitting the received ultra-wideband electromagnetic pulse to the coupling antenna;
the coupling antenna is used for receiving the ultra-wideband electromagnetic pulse and sending the ultra-wideband electromagnetic pulse to the diode limiter; the diode limiter is used for receiving the ultra-wideband electromagnetic pulse and generating peak leakage so that the ultra-wideband electromagnetic pulse enters the radio frequency front-end circuit.
Further, the radio frequency front-end circuit comprises a low-noise amplifier module, a band-pass filter, a mixer and an automatic gain control module which are connected in sequence; the diode limiter is connected with the low-noise amplifier module and is used for sending ultra-wideband electromagnetic pulse to the low-noise amplifier module after peak leakage occurs.
Further, the low noise amplifier module is used for generating saturation effect after receiving the ultra-wideband electromagnetic pulse and transmitting the ultra-wideband electromagnetic pulse to the mixer through the band-pass filter.
Further, the mixer is used for generating saturation effect and generating higher harmonic after receiving the ultra-wideband electromagnetic pulse, and transmitting the ultra-wideband electromagnetic pulse to the automatic gain control module.
Further, the automatic gain control module is used for reducing the output control voltage after receiving the ultra-wideband electromagnetic pulse.
Further, the rise time of the ultra-wideband electromagnetic pulse generated by the ultra-wideband pulse generator is between 100 picoseconds and 500 picoseconds.
Further, the peak power of the ultra-wideband electromagnetic pulse generated by the ultra-wideband pulse generator is between 2 kilowatts and 130 kilowatts.
Further, the maximum value of the frequency spectrum range of the ultra-wideband electromagnetic pulse generated by the ultra-wideband pulse generator is 5 gigahertz.
Further, the response time of the diode limiter is between 5 nanoseconds and 50 nanoseconds.
Further, the device also comprises a post-stage circuit, and the post-stage circuit is connected with the output end of the automatic gain control module.
In summary, compared with the prior art, the technical scheme provided by the embodiment of the application has the beneficial effects that at least:
according to the interference device for the radio frequency front-end circuit with the limiter, ultra-wideband electromagnetic pulses generated by the ultra-wideband pulse generator are input into the diode limiter through the transmitting antenna and the coupling antenna, compared with HPM pulses, the ultra-wideband electromagnetic pulses have shorter rising time and pulse duration, generally in the picosecond order, and meanwhile, the peak power of the ultra-wideband electromagnetic pulses reaches the gigawatt order, so that the diode limiter can generate peak leakage and lose the limiting capacity, and the ultra-wideband electromagnetic pulses smoothly enter the radio frequency front-end circuit to interfere the radio frequency front-end circuit.
Drawings
Fig. 1 is a block diagram of an interference device for a radio frequency front-end circuit with a limiter according to an embodiment of the present application.
Fig. 2 is a block diagram of an interference device for a radio frequency front-end circuit with a limiter according to another embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
Referring to fig. 1, an embodiment of the present application provides an interference device for a radio frequency front-end circuit with a limiter, where the device may specifically include: an ultra-wideband pulse generator 101, a transmitting antenna 102, and a coupling antenna 103, a diode limiter 104, and a radio frequency front end circuit 105 connected in sequence.
The ultra-wideband pulse generator 101 is configured to generate ultra-wideband electromagnetic pulses and transmit the ultra-wideband electromagnetic pulses to the transmitting antenna 102; the transmitting antenna 102 is used for transmitting the received ultra-wideband electromagnetic pulse to the coupling antenna 103; the coupling antenna 103 is used for receiving the ultra-wideband electromagnetic pulse and sending the ultra-wideband electromagnetic pulse to the diode Guan Xianfu device 104; the diode limiter 104 is configured to receive the ultra-wideband electromagnetic pulse and generate spike leakage such that the ultra-wideband electromagnetic pulse enters the radio frequency front end circuit 105.
The Ultra wideband pulse generator 101 is an Ultra Wideband (UWB) pulse, the Ultra wideband electromagnetic pulse is an UWB electromagnetic pulse, and the diode limiter 104 may be a PIN diode limiter.
The ideal PIN diode is composed of a heavily doped P region, an N region and an intrinsic semiconductor I layer sandwiched between the two regions. In a direct current signal input state, when in zero bias, carriers of the P layer and the N layer diffuse to the I layer respectively due to concentration difference, but the doping concentration of the I layer is low, so that a thinner space charge layer is formed at the boundary, further diffusion of holes and electrons to the I layer is further prevented, at the moment, the I layer of the PIN diode is non-conductive, and the conductivity is extremely low and is in a high-impedance state; in forward bias, the external electric field is applied to make electrons and holes continuously enter the layer I and recombine in the layer I, and balance is achieved when the number of injected electron hole pairs is equal to the number of recombined electron hole pairs besides the concentration difference. At the moment, a large number of carriers are stored in the layer I, the conductivity is high, the conduction to the outside is realized, and the resistance can be approximately regarded as small resistance; when reverse bias is carried out, the external electric field makes the space charge area wider, and when the reverse bias is increased to a certain threshold value, the whole I layer is penetrated, and the diode is in a high-resistance state.
In the ac signal input state, the characteristics exhibited by the PIN diode are affected by the signal frequency. The alternating current signal has a larger period and longer duration of positive and negative half cycles at low frequency, so that the characteristic of the alternating current signal is equal to the positive bias voltage of the direct current signal at the positive half cycle of the alternating current signal, and the alternating current signal is in a low-resistance conduction state; the characteristic of the AC signal is equal to the reverse bias state of the DC signal in the negative half cycle, and the AC signal is in a high-blocking state. The characteristic is unidirectional conductivity as a whole. The alternating current signal period is smaller at high frequency, the positive half cycle conversion time is faster, the electron holes diffuse from two ends to the I region when the signal is in the positive half cycle, and the carriers in the intrinsic region are sucked out when the signal is converted into the negative half cycle, but the service life of the carriers is longer than that of the half cycle of the alternating current signal, and the carriers are not sucked out completely and are converted into the positive half cycle, so that a certain amount of carriers exist in the I region all the time in the whole process. Thus, after several rounds of conversion, the charge storage of the I area reaches a stable state, the I area has low impedance characteristic to the outside, and the conductivity is increased.
The main technical indexes of the diode limiter 104 include limited threshold power, power capacity, response time and the like, but the relationship among the three is mutually inhibited. The peak leakage of the diode limiter 104 is the most significant cause of damage to itself and the radio frequency front end circuit 105. When the rise time of the signal pulse received by the diode limiter 104 is less than the response time of the diode Guan Xianfu limiter 104, the spike leakage effect leaves the signal pulse free of the limiting effect of the diode limiter 104. The peak leakage refers to that the diode in the diode limiter 104 is in a high-resistance state before the carrier concentration of the I layer reaches a stable level, the limiting effect on the high-power microwave radio frequency signal is weak, and the main factor causing the peak leakage is that the rising time of the signal pulse is short and the response time of the diode is slow.
Ultra wideband electromagnetic pulses, due to their extremely short rise times, typically on the order of picoseconds, tend to cause spike leakage from diode limiter 104, which is directly transferred into rf front-end circuit 105 without amplitude limiting.
In the interference device for the rf front-end circuit with the limiter provided in the above embodiment, the ultra-wideband electromagnetic pulse generated by the ultra-wideband pulse generator 101 is input into the diode limiter 104 through the transmitting antenna 102 and the coupling antenna 103, and compared with the HPM pulse, the ultra-wideband electromagnetic pulse has a shorter rise time and pulse duration, generally in the picosecond order, and the peak power of the ultra-wideband electromagnetic pulse reaches the gigawatt order, so that the diode limiter 104 can generate peak leakage and lose the limiting capability, and the ultra-wideband electromagnetic pulse smoothly enters the rf front-end circuit 105 to interfere with the rf front-end circuit 105.
Referring to fig. 2, in some embodiments, the radio frequency front-end circuit 105 may specifically include a low noise amplifier module 51, a band-pass filter 52, a mixer 53, and an automatic gain control module 54 connected in sequence; the diode limiter 104 is connected to the low noise amplifier module 51, and the diode limiter 104 is configured to send ultra-wideband electromagnetic pulses to the low noise amplifier module 51 after spike leakage occurs.
The low noise amplifier module 51 is a low noise amplifier, the automatic gain control module 54 is abbreviated as AGC, and the automatic gain control is an automatic control method for automatically adjusting the gain of the amplifying circuit according to the signal strength.
In some embodiments, the low noise amplifier module 51 is configured to generate a saturation effect after receiving the ultra-wideband electromagnetic pulse, and send the ultra-wideband electromagnetic pulse to the mixer 53 through the band-pass filter 52.
In some embodiments, the mixer 53 is configured to generate saturation effects and higher harmonics after receiving the ultra-wideband electromagnetic pulse, and send the ultra-wideband electromagnetic pulse to the automatic gain control module 54.
The low noise amplifier module 51, the mixer 53, and the like in the above embodiments are divided into a linear region, a saturation region, and a breakdown region as the input power of the signal increases. Under the condition of normal signal input, the input power is lower, the device is in a linear working state, and the normal signal is effectively amplified. However, when the ultra wideband electromagnetic pulse successfully passes through the diode limiter 104 and enters the radio frequency front end circuit 105, the instantaneous power level of the ultra wideband electromagnetic pulse is far higher than the receiving sensitivity of the receiver, and a saturation effect is caused on sensitive devices such as the low noise amplifier module 51, the mixer 53 and the like, so that the low noise amplifier module 51 loses the signal amplification effect, the mixer 53 loses the mixing effect and generates higher harmonics, and thus, the interference on the radio frequency front end circuit 105 is successfully caused.
In some embodiments, the automatic gain control module 54 is configured to reduce the output control voltage after receiving the ultra-wideband electromagnetic pulse.
The automatic gain control module 54 in the above embodiment greatly reduces the output control voltage in a longer time after receiving the ultra-wideband electromagnetic pulse, resulting in a great reduction in the gain of the whole receiver, and the useful signal is not effectively amplified in a time before the control voltage is restored to the normal state, thereby realizing interference suppression on the rf front-end circuit 105.
In some embodiments, the rise time of the ultra-wideband pulse generated by the ultra-wideband pulse generator 101 is between 100 picoseconds and 500 picoseconds.
In some embodiments, the peak power of the ultra-wideband electromagnetic pulse generated by the ultra-wideband pulse generator 101 is between 2 kilowatts and 130 kilowatts.
In some embodiments, the ultra-wideband pulse generator 101 generates an ultra-wideband pulse having a maximum of 5 gigahertz.
The above embodiments demonstrate that the ultra wideband electromagnetic pulse generated by the ultra wideband pulse generator 101 in this application has very little rise time, far less than the response time of the diode Guan Xianfu limiter 104, can quickly disable the limiter function of the diode limiter 104, and because the power and frequency are very high, far higher than the receiver sensitivity, thus causing interference suppression to the rf front end circuit 105.
In one embodiment, the response time of diode limiter 104 is between 5 nanoseconds and 50 nanoseconds.
The above embodiment illustrates that the response time of the diode limiter 104 is in nanoseconds, and the rise time of the ultra-wideband electromagnetic pulse is in picoseconds, which is far less than the response time of the diode Guan Xianfu limiter 104, so that the diode limiter 104 must generate spike leakage after receiving the ultra-wideband electromagnetic pulse, so that the ultra-wideband electromagnetic pulse enters the radio frequency front-end circuit 105.
In one embodiment, the apparatus further includes a post-stage circuit coupled to the output of the automatic gain control module 54.
Specifically, the anti-interference measures of the receiver are mainly divided into front-end protection and back-end protection, the front-end protection is aimed at the interference signal pulse entering from the radio frequency front-end circuit 105, and the back-end protection is aimed at the interference signal pulse entering from the back-end circuit. The anti-interference measures of the post-stage circuit based on signal processing comprise an adaptive zeroing technology, a high-speed frequency hopping technology, a digital beam forming technology and the like.
The rear-stage circuit in the above embodiment cannot resist the ultra-wideband electromagnetic pulse entering the radio-frequency front-end circuit 105, and cannot exert the anti-interference effect thereof, so that the ultra-wideband electromagnetic pulse can interfere with various targets such as radar, communication, navigation and the like, can also interfere with various system targets such as single/multiple antennas and the like, and has very wide application occasions.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples merely represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (10)
1. An interference device for a radio frequency front-end circuit with a limiter is characterized by comprising an ultra-wideband pulse generator, a transmitting antenna, a coupling antenna, a diode limiter and the radio frequency front-end circuit which are sequentially connected;
the ultra-wideband pulse generator is used for generating ultra-wideband electromagnetic pulses and transmitting the ultra-wideband electromagnetic pulses to the transmitting antenna; the transmitting antenna is used for transmitting the received ultra-wideband electromagnetic pulse to the coupling antenna;
the coupling antenna is used for receiving ultra-wideband electromagnetic pulses and sending the ultra-wideband electromagnetic pulses to the diode Guan Xianfu device; the diode limiter is used for receiving the ultra-wideband electromagnetic pulse and generating peak leakage so that the ultra-wideband electromagnetic pulse enters the radio frequency front-end circuit.
2. The apparatus of claim 1, wherein the radio frequency front-end circuit comprises a low noise amplifier module, a band-pass filter, a mixer, and an automatic gain control module connected in sequence;
the diode Guan Xianfu device is connected with the low-noise amplifier module, and the diode limiter is used for sending the ultra-wideband electromagnetic pulse to the low-noise amplifier module after the peak leakage occurs.
3. The apparatus of claim 2, wherein the low noise amplifier module is configured to generate a saturation effect after receiving the ultra-wideband electromagnetic pulse and to transmit the ultra-wideband electromagnetic pulse to the mixer through the band-pass filter.
4. The apparatus of claim 3, wherein the mixer is configured to generate a saturation effect and generate higher harmonics upon receipt of the ultra-wideband electromagnetic pulse, the ultra-wideband electromagnetic pulse being sent to the automatic gain control module.
5. The apparatus of claim 4, wherein the automatic gain control module is configured to reduce the output control voltage after receiving the ultra-wideband electromagnetic pulse.
6. The apparatus of claim 1, wherein a rise time of the ultra-wideband electromagnetic pulse generated by the ultra-wideband pulse generator is between 100 picoseconds and 500 picoseconds.
7. The apparatus of claim 1, wherein the peak power of the ultra-wideband electromagnetic pulse generated by the ultra-wideband pulse generator is between 2 kilowatts and 130 kilowatts.
8. The apparatus of claim 1, wherein the ultra-wideband electromagnetic pulse generated by the ultra-wideband pulse generator has a spectral range maximum of 5 gigahertz.
9. The apparatus of claim 1, wherein the response time of the diode limiter is between 5 nanoseconds and 50 nanoseconds.
10. The apparatus of claim 2, further comprising a post-stage circuit coupled to the output of the automatic gain control module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310300401.8A CN116318202A (en) | 2023-03-16 | 2023-03-16 | Interference device for radio frequency front-end circuit with limiter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310300401.8A CN116318202A (en) | 2023-03-16 | 2023-03-16 | Interference device for radio frequency front-end circuit with limiter |
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| Publication Number | Publication Date |
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| CN116318202A true CN116318202A (en) | 2023-06-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202310300401.8A Pending CN116318202A (en) | 2023-03-16 | 2023-03-16 | Interference device for radio frequency front-end circuit with limiter |
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| CN (1) | CN116318202A (en) |
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- 2023-03-16 CN CN202310300401.8A patent/CN116318202A/en active Pending
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