CN116318009A - Method for manufacturing surface acoustic wave device, surface acoustic wave device and radio frequency module - Google Patents
Method for manufacturing surface acoustic wave device, surface acoustic wave device and radio frequency module Download PDFInfo
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims description 28
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000005520 cutting process Methods 0.000 claims abstract description 38
- 239000013078 crystal Substances 0.000 claims abstract description 28
- 238000004806 packaging method and process Methods 0.000 claims abstract description 24
- 229910000679 solder Inorganic materials 0.000 claims description 94
- 239000002184 metal Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 230000007704 transition Effects 0.000 claims description 29
- 238000002513 implantation Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 10
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 238000013508 migration Methods 0.000 description 2
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- 229910000990 Ni alloy Inorganic materials 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
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Abstract
The application provides a surface acoustic wave device, a manufacturing method and a radio frequency module, wherein the manufacturing method comprises the steps of forming a wafer bonding pad, implanting balls into the wafer bonding pad, thinning, cutting the thinned wafer to form crystal grains, flip-chip the crystal grains on the substrate bonding pad of a substrate, packaging to form a package body, and cutting. By the manufacturing method, the problem of connection failure caused by possible gaps and short circuits which are easy to cause when the package size is reduced can be avoided.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a method for manufacturing a surface acoustic wave device, and a radio frequency module.
Background
The manufacturing process of the surface acoustic wave device is generally divided into: die fabrication, front-end-of-line processing (wafer processing), and back-end-of-line processing (package testing). The surface acoustic wave device obtained by the existing manufacturing method of the surface acoustic wave device has thicker packaging form thickness, and does not meet the requirements of the current radio frequency module; and the packaging size is larger, and the current size miniaturization requirement is not met.
In the prior art, the die and the substrate are connected by adopting the way of flip-chip welding of a solder ball or arranging bumps on the die and the substrate, and the bump interconnection way is adopted, so that although the precision of the relative position can be kept, the temporary positioning effect is good, once the packaging size is reduced, namely the connection space is reduced, the short circuit is easily caused, the yield is reduced, and the gap can occur, so that the connection failure is caused.
Disclosure of Invention
The main object of the present invention is to overcome at least one of the above drawbacks of the prior art, and to provide a manufacturing method, a surface acoustic wave device and a radio frequency module capable of ensuring good performance and small size of the surface acoustic wave device.
In order to achieve the above purpose, the present application adopts the following technical scheme:
according to an aspect of the present application, there is provided a method of manufacturing a surface acoustic wave device, comprising the steps of:
s1, a wafer bonding pad forming step, namely providing a wafer, wherein the wafer is provided with a first wafer surface and a second wafer surface which are arranged oppositely, the first wafer surface is provided with a plurality of functional areas responding to surface acoustic waves and a non-functional area among the plurality of functional areas, and the wafer bonding pad is formed in the non-functional area;
s2, a ball mounting step, wherein a plurality of solder balls are formed on the surface of the wafer bonding pad, and the solder balls are in metallurgical connection with the wafer bonding pad;
s3, a thinning step, namely fixing the surface of the first wafer of the wafer on a clamping device, thinning the surface of the second wafer, wherein the thickness of the thinned wafer is less than or equal to 170um;
s4, a wafer cutting step, namely arranging cutting channels between adjacent solder balls in the wafer bonding pads, and cutting the wafer along the cutting channels to form a plurality of grains;
s5, a crystal grain flip-chip step, namely providing a substrate, wherein a substrate bonding pad is arranged on the surface of the substrate, and the crystal grain is flip-chip bonded to the substrate bonding pad through the solder ball;
s6, a packaging step, namely covering the surface of the substrate and the surface of the crystal grain, which is far away from the substrate, by a packaging structure to form a packaging body;
and S7, cutting the packaging body to form a plurality of surface acoustic wave devices.
According to an embodiment of the present application, in step S2, the solder wire is melted into a solder ball by spark discharge, and the solder ball is moved to the surface of the wafer pad for ultrasonic thermocompression bonding, so as to achieve metallurgical connection between the solder ball and the wafer pad.
According to one embodiment of the application, after the planting of the solder balls is completed at the first welding point on the surface of the wafer bonding pad, after the tail of the solder balls is cut, the wire tail of the solder balls moves from the first welding point to the second welding point, and the planting of the next solder balls is continued.
According to an embodiment of the present application, in step S2, the diameter of the solder wire is 15um to 22um, and the diameter of the solder ball is 40um to 80um.
According to an embodiment of the present application, in step S2, the process parameters of the ultrasonic thermocompression bonding are: the ultrasonic current is 10 mA-90 mA, the ball implantation time is 5ms-40ms, and the ball implantation pressure is 10 g-60 g.
According to an embodiment of the present application, the total projected area of the solder balls on the substrate is 10% -95% of the total projected area of the wafer pads on the substrate.
According to an embodiment of the present application, in step S3, a thinning device is used to thin the surface of the second wafer, a motion track is set along the surface of the second wafer, where the motion track is one or more of concentric circles, spiral lines and sine lines, and the thinning device moves along the motion track and rotates simultaneously.
According to an embodiment of the present application, in step S1, a pad width of the wafer pad is less than or equal to 100um.
According to an embodiment of the present application, in step S1, the wafer pad is in a stacked structure, and the stacked structure is composed of at least one first pad unit.
According to an embodiment of the present application, the first pad unit includes a first metal layer and a first transition layer, the first transition layer is disposed on a surface of the wafer pad, and the first metal layer is disposed on the first transition layer.
According to an embodiment of the present application, the material of the first transition layer is Ti or an alloy containing Ti as a main component.
According to an embodiment of the present application, the thickness of the first transition layer is 2000nm or less, preferably 1000nm or less, and more preferably 500nm or less.
According to an embodiment of the present application, the material of the first metal layer is Al or an alloy containing Al as a main component, or the material of the first metal layer is Au or an alloy containing Au as a main component.
According to an embodiment of the present application, the stacked structure further includes a second pad unit, the second pad unit includes a second metal layer and a second transition layer, the second transition layer is disposed on the first metal layer of the first pad unit, and the second metal layer is disposed on the second transition layer.
According to an embodiment of the present application, the material of the second metal layer is Al or an alloy containing Al as a main component, or the material of the second metal layer is Au or an alloy containing Au as a main component.
According to another aspect of the present application, there is provided a surface acoustic wave device manufactured by the above manufacturing method, the surface acoustic wave device including a substrate, a die, and a package structure. The crystal grain is arranged on the substrate in a flip-chip manner through a solder ball, and the thickness of the crystal grain is less than or equal to 170um; the package structure covers the substrate and the surface of the die away from the substrate.
According to one embodiment of the application, the die has a wafer pad, and the width of the wafer pad is less than or equal to 100um.
According to one embodiment of the present application, the diameter of the solder balls is 40-80um, and the number of the solder balls is at least one.
According to a third aspect of the present application, there is provided a radio frequency module, wherein the radio frequency module comprises one or more of a power amplifier, an antenna, a low noise amplifier, a switch, and a surface acoustic wave device as above.
As can be seen from the above technical solutions, the method for manufacturing a surface acoustic wave device according to the present application has the following advantages and positive effects:
according to the manufacturing method of the surface acoustic wave device, the wafer is subjected to the ball implantation step and then subjected to the thinning step, so that the thickness of the thinned wafer is less than or equal to 170um, the overall size of the surface acoustic wave device is smaller, and the wafer has enough strength in the ball implantation process. And the metallurgical connection between the solder balls and the wafer bonding pads can further avoid the problems of short circuit, connection failure and the like caused by smaller size. The manufacturing method of the surface acoustic wave device realizes miniaturization of the surface acoustic wave device and improves quality of the surface acoustic wave device.
Drawings
The above and other features and advantages of the present application will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
Fig. 1 is a block diagram showing steps of a method for manufacturing a surface acoustic wave device of the present application.
Fig. 2 is a schematic diagram of step S1 in the method of manufacturing a surface acoustic wave device of the present application.
Fig. 3 is a schematic diagram of step S2 in the method of manufacturing a surface acoustic wave device of the present application.
Fig. 4 is a schematic diagram of step S3 in the method of manufacturing a surface acoustic wave device of the present application.
Fig. 5 is a schematic diagram of step S4 in the method of manufacturing a surface acoustic wave device of the present application.
Fig. 6 is a schematic diagram of step S5 in the method of manufacturing a surface acoustic wave device of the present application.
Fig. 7 is a schematic diagram of step S6 in the method of manufacturing a surface acoustic wave device of the present application.
Fig. 8 is a schematic diagram of step S7 in the method of manufacturing a surface acoustic wave device of the present application.
Fig. 9 is a schematic diagram of an embodiment of step S1 in the method of manufacturing a surface acoustic wave device of the present application.
Fig. 10 is a schematic diagram of another embodiment of step S1 in the method of manufacturing a surface acoustic wave device of the present application.
Fig. 11 is a schematic structural diagram of a radio frequency module of the present application.
Wherein reference numerals are as follows:
1-wafer;
2-solder balls;
3-cutting the channel;
4-grains;
5-a substrate;
6-packaging structure;
7-a clamping device;
8-thinning means;
9-packaging;
10-a radio frequency module;
21-welding wire;
22-a firing rod;
23-chopper;
100-surface acoustic wave devices;
101-a first wafer surface;
102-a second wafer surface;
103-functional region;
104-nonfunctional area;
105-wafer pads;
200-a first pad unit;
201-a first metal layer;
202-a first transition layer;
300-a second pad unit;
301-a second metal layer;
302-second transition layer
503-substrate pads.
Detailed Description
Exemplary embodiments that exhibit the features and advantages of the present application are described in detail in the following description. It will be understood that the present application is capable of various modifications in the various embodiments, none of which depart from the scope of the present application, and that the description and drawings are intended to be illustrative in nature and not to be limiting of the present application.
In the following description of various exemplary embodiments of the present application, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustration various exemplary structures, systems, and steps in which aspects of the present application may be practiced. It is to be understood that other specific arrangements of parts, structures, example devices, systems, and steps may be utilized and structural and functional modifications may be made without departing from the scope of the present application. Moreover, although the terms "upper," "middle," "inner," and the like may be used in this specification to describe various example features and elements of the present application, these terms are used herein for convenience only, e.g., according to the orientation of the examples depicted in the drawings. Nothing in this specification should be construed as requiring a particular three-dimensional orientation of the structure to fall within the scope of this application.
In order that the above-recited objects, features and advantages of the present application will become apparent, a more particular description of embodiments of the present application will be rendered by reference to the appended drawings.
As shown in fig. 1 to 8, the method of manufacturing the surface acoustic wave device 100 of the present application includes:
s1, a wafer pad forming step, namely providing a wafer 1, wherein the wafer 1 is provided with a first wafer surface 101 and a second wafer surface 102 which are arranged oppositely, the first wafer surface 101 is provided with a plurality of functional areas 103 responding to surface acoustic waves and a non-functional area 104 among the plurality of functional areas 103, and a wafer pad 105 is formed in the non-functional area 104;
s2, a ball mounting step, wherein a plurality of solder balls 2 are formed on the surface of the wafer bonding pad 105, and the solder balls 2 are in metallurgical connection with the wafer bonding pad 105;
s3, a thinning step, namely fixing the first wafer surface 101 of the wafer 1 on the clamping device 7, thinning the second wafer surface 102, wherein the thickness of the thinned wafer 1 is less than or equal to 170um;
s4, a wafer cutting step, namely arranging cutting channels 3 between adjacent solder balls 2 in the wafer bonding pads 105, and cutting the wafer along the cutting channels 3 to form a plurality of crystal grains 4;
s5, a crystal grain flip-chip step, namely providing a substrate 5, wherein a substrate bonding pad 503 is arranged on the surface of the substrate 5, and the crystal grain 4 is flip-chip bonded to the substrate bonding pad 503 through a solder ball 2;
s6, a packaging step, namely covering the surface of the substrate 5 and the surface of the crystal grain 4, which is far away from the substrate 5, with a packaging structure 6 to form a packaging body 9;
s7, a cutting step, namely cutting the package 9 to form a plurality of surface acoustic wave devices 100.
According to the manufacturing method, the wafer is subjected to the ball implantation step and then subjected to the thinning step, so that the thickness of the thinned wafer is less than or equal to 170um, the overall size of the surface acoustic wave device is smaller, and the wafer has enough strength in the ball implantation process. The metallurgical connection between the solder balls and the wafer bonding pads can further avoid the problems of short circuit, connection failure and the like caused by smaller size, the ultra-thin package of the surface acoustic wave device is realized, the performance is good, and the miniaturization of the device is facilitated.
The thinning method includes a method using a grinding wheel or a cutter, or a method using a thinning liquid and a thinning cloth.
The number of crystal grains included in the surface acoustic wave device is not particularly limited in this application. The surface acoustic wave device referred to in the present application may be a surface acoustic wave device including a single die, or may be a surface acoustic wave device including a plurality of dies, for example, the number of dies may be 2, 3, 4, 5, 6 or more, and the surface acoustic wave device may be a double SAW composed of two identical dies, a triple SAW composed of three identical dies, a duplexer composed of two different dies, a triplexer composed of three different dies, or the like.
In step S4, the cutting mode adopts laser pulse cutting. The repetition rate of the laser pulses is in the range of 100kHz-10MHz, and the spot size of the laser pulses is in the range of 1-50 μm. By adopting laser pulse cutting, the residual stress of device processing can be reduced, the cutting depth and cutting rate can be controlled, chip edge breakage can be reduced, and the device yield can be improved.
As another embodiment of the present application, in step S4, the cutting mode is cutting with a diamond tool. Wherein the cutting width of the diamond cutter is 20-80um. Preferably, the wafer cutting comprises a first diamond tool cutting step and a second diamond tool cutting step, the width of the first diamond tool is larger than that of the second diamond tool, and a cutting channel with a wide upper part and a narrow lower part is formed together, so that residual stress of the wafer cutting can be reduced, chip edge damage is reduced, and device warping is reduced. For example, the first diamond tool may have a width of 40-80um and the second diamond tool may have a width of 20-50um.
In this embodiment, in step S2, the solder wire 21 is melted into the solder ball 2 by spark discharge, and the solder ball 2 is moved to the surface of the wafer pad 105 for ultrasonic thermocompression bonding, so that the metallurgical connection between the solder ball 2 and the wafer pad 105 is achieved. The metallurgical bonding of the solder balls to the wafer pads enables the solder balls to be more securely disposed on the wafer pads and facilitates electrical conduction.
It should be noted that the spark rod may be used for discharging, and the movement of the solder ball may be that the chopper is used for driving the solder ball to move.
In this embodiment, after the planting of the solder balls is completed at the first solder point on the surface of the wafer pad 105, the tail of the solder ball 2 is cut, and then the solder balls are moved from the first solder point to the second solder point, so as to continue the planting of the next solder ball. After the planting of the solder balls is completed at the first welding point, the wire tail of the solder balls is cut off, the wire tail of the solder balls moves from the first welding point to the second welding point, and the planting mode of the next solder balls is continued, so that the planting of the solder balls is continuous, and the production efficiency is improved.
In the present embodiment, the diameter of the solder wire 21 is 15um to 22um, and the diameter of the solder ball 2 is 40um to 80um. The welding wire with the diameter of 15-22 um is adopted to form the welding ball with the diameter of 40-80um, so that the welding ball of the surface acoustic wave device is miniature in size, the whole size is small, and the performance is good. Wherein the diameter of the solder balls may be selected from 40um, 41um, 43um, 45um, 47um, 49um, 50um, 51um, 53um, 55um, 57um, 58um, 59um, 60um, 63um, 67um, 70um, 73um, 75um, 77um.
In this embodiment, the process parameters of the ultrasonic thermocompression bonding are: the ultrasonic current is 10 mA-90 mA, the ball implantation time is 5ms-40ms, and the ball implantation pressure is 10 g-60 g. The wafer bonding pad and the solder ball are processed by adopting the process parameter ultrasonic hot-press welding, so that metallurgical connection can be generated between the wafer bonding pad and the solder ball, the metallurgical connection effect is stable, the conductivity is good, and the bonding between the solder ball and the wafer bonding pad is firm.
As another embodiment of the present application, the implanting of the ball may be performed in three stages:
the ultrasonic current in the first stage is set to be 10-30 mA, the ball planting time is 1-5 mS, and the ball planting pressure is 10-45g.
The ultrasonic current in the second stage is set to be 20-65mA, the ball implantation time is 3-9mS, and the ball implantation pressure is 25-50g.
In the third stage, the ultrasonic current is set to 55-90mA, the ball implantation time is 7-26mS, and the ball implantation pressure is 45-60g.
As another embodiment of the present application, the implanting of the ball may be performed in two stages:
the ultrasonic current in the first stage is set to be 10-45 mA, the ball planting time is 3-14 mS, and the ball planting pressure is 10-45g.
The ultrasonic current in the second stage is set to be 35-90mA, the ball implantation time is 7-26mS, and the ball implantation pressure is 35-60g.
In contrast, the implanting ball can comprise a single implanting ball stage without parameter change, or a stage comprising a plurality of changing parameters, can be flexibly adjusted according to different materials, and has higher suitability. In addition, the ultrasonic current, time and pressure are controlled, so that the firmness of the solder balls can be ensured, and the yield is improved. By means of mini ball implantation, a miniaturized packaging mode of the sound surface device can be guaranteed.
In this embodiment, the projected total area of the solder balls 2 on the substrate 5 is 10% -95% of the projected total area of the wafer pads 105 on the substrate 5. Therefore, a certain gap is formed between the solder balls, and the number of the solder balls on the wafer bonding pad is maximized as much as possible, so that the cost is reduced, and the productivity is improved.
In the present embodiment, in step S3, the thinning device 8 is used to thin the second wafer surface 102, and a motion track is set along the second wafer surface 102, where the motion track is one or more of concentric circles, a spiral line, and a sine line, and the thinning device 8 moves along the motion track and rotates at the same time. The thinning is performed by adopting a rotation and revolution mode, so that the surface quality of the second wafer after the surface of the second wafer is thinned can be ensured, and the thinning efficiency can be improved. The internal stress of the wafer caused by hot working can be effectively reduced, the damage and breakage of the wafer are reduced, and the yield is improved.
In this embodiment, the pad width of the wafer pad 105 is 100um or less. The width of the wafer bonding pad can ensure the size of a mini solder ball and the quality of the whole surface acoustic wave device.
In this embodiment, the wafer pad 105 has a stacked structure composed of at least one first pad unit 200. By adopting the laminated structure, the wafer bonding pad can be adaptively selected according to different sizes and requirements, and the production cost can be effectively reduced.
In this embodiment, the first pad unit 200 includes a first metal layer 201 and a first transition layer 202, the first transition layer 202 is disposed on the surface of the wafer pad 105, and the first metal layer 201 is disposed on the first transition layer 202. The arrangement of the first transition layer can reduce the cavity problem caused by component migration of the first metal layer when the surface acoustic wave filter works, and the service life of the surface acoustic wave device is prolonged.
In this embodiment, the material of the first transition layer 202 is Ti or an alloy containing Ti as a main component. The first transition layer is made of Ti or alloy taking Ti as a main component, so that the problem of cavity caused by component migration of the first metal layer when the surface acoustic wave filter works is solved, and the service life of the surface acoustic wave device is prolonged.
In the above embodiment, the thickness of the first transition layer 202 is less than 2000nm, preferably less than or equal to 1000nm, and more preferably less than or equal to 500nm. The thickness of the first transition layer is less than 2000nm, preferably 1000nm or less, more preferably 500nm or less, and can further migrate components, thereby avoiding the problem of voids.
In this embodiment, the material of the first metal layer 201 is Al or an alloy containing Al as a main component, or the material of the first metal layer 201 is Au or an alloy containing Au as a main component. The bonding strength of the first metal layer and the solder balls can be improved, and the device yield is improved. The material of the first metal layer can also be nickel or nickel alloy.
In this embodiment, the stacked structure further includes a second pad unit 300, where the second pad unit 300 includes a second metal layer 301 and a second transition layer 302, the second transition layer 302 is disposed on the first metal layer 201 of the first pad unit 200, and the second metal layer 301 is disposed on the second transition layer 302. The second bonding pad unit is arranged, so that the laminated structure of the wafer bonding pad is richer, and the selection of different surface acoustic wave devices is facilitated.
In this embodiment, the material of the second metal layer 301 is Al or an alloy containing Al as a main component, or the material of the second metal layer 201 is Au or an alloy containing Au as a main component. The material of the second metal layer is the same as or similar to the composition of the solder balls, so that the bonding strength of the second metal layer and the solder balls can be improved, and the yield of the device is improved. The laminated structure may be formed by a vacuum evaporation process film formation technique and then subjected to a heat treatment.
The present application also provides a surface acoustic wave device 100 manufactured by the above method. The acoustical surface device 100 comprises a substrate 5, a die 4 and a package structure 6. The crystal grain 4 is arranged on the substrate 5 in a flip-chip manner through the solder balls 2, and the thickness of the crystal grain 4 is less than or equal to 170um; the package structure 6 covers the substrate 5 and the surface of the die 4 remote from the substrate 5. The surface acoustic wave device manufactured by the method has the advantages that the thickness of the crystal grain is less than or equal to 170um, the overall size of the surface acoustic wave device is small, and the wafer has enough strength in the ball implantation process. The metallurgical connection between the solder balls and the wafer bonding pads can further avoid the problems of short circuit, connection failure and the like caused by small size, and the ultra-thin package of the surface acoustic wave device is realized and the performance is good.
In the present embodiment, the die 4 has a wafer pad 105, and the width of the wafer pad 105 is 100um or less. The width of the wafer bonding pad can ensure the size of a mini solder ball and the quality of the whole surface acoustic wave device.
In the present embodiment, the diameter of the solder balls 2 is 40 to 80um, and the number of the solder balls 2 is at least one. The solder balls with the size of 40-80um can lead the solder ball size of the surface acoustic wave device to be mini, thereby realizing smaller overall size and good performance.
The present application also provides a radio frequency module 10 comprising one or more of a power amplifier, an antenna, a low noise amplifier, a switch, and a surface acoustic wave device 100 as above. The radio frequency module of the surface acoustic wave device has small thickness and high quality.
In summary, the method for manufacturing the surface acoustic wave device provided by the application comprises the following steps: s1, a wafer bonding pad forming step, namely providing a wafer, wherein the wafer is provided with a first wafer surface and a second wafer surface which are arranged oppositely, the first wafer surface is provided with a plurality of functional areas responding to the surface acoustic wave and a non-functional area among the plurality of functional areas, and the wafer bonding pad is formed in the non-functional area; s2, a ball mounting step, wherein a plurality of solder balls are formed on the surface of the wafer bonding pad, and the solder balls are in metallurgical connection with the wafer bonding pad; s3, a thinning step, namely fixing the surface of the first wafer of the wafer on a clamping device, and thinning the surface of the second wafer, wherein the thickness of the thinned wafer is less than or equal to 170um; s4, a wafer cutting step, namely arranging cutting channels between adjacent solder balls in the wafer bonding pads, and cutting the wafer along the cutting channels to form a plurality of grains; s5, a crystal grain flip-chip step, namely providing a substrate, wherein a substrate bonding pad is arranged on the surface of the substrate, and the crystal grain is flip-chip bonded to the substrate bonding pad through a solder ball; s6, a packaging step, namely covering the surface of the substrate and the surface of the crystal grain, which is far away from the substrate, by the packaging structure to form a packaging body; s7, cutting, namely cutting the package body to form a plurality of surface acoustic wave devices.
According to the manufacturing method, the wafer is subjected to the ball implantation step and then subjected to the thinning step, so that the thickness of the thinned wafer is less than or equal to 170um, the overall size of the surface acoustic wave device is smaller, and the wafer has enough strength in the ball implantation process. The metallurgical connection between the solder balls and the wafer bonding pads can further avoid the problems of short circuit, connection failure and the like caused by small size, the ultra-thin packaging of the surface acoustic wave device is realized, the performance is good, the miniaturization of the device is facilitated, the production efficiency and the production capacity are improved, and the market demand for high-quality electronic devices is met.
The surface acoustic wave device is manufactured by the method, and comprises a substrate, crystal grains and a packaging structure. The crystal grain is arranged on the substrate in a flip-chip manner through the solder balls, and the thickness of the crystal grain is less than or equal to 170um; the package structure covers the substrate and the surface of the die away from the substrate. The surface acoustic wave device manufactured by the method has the advantages that the thickness of the crystal grain is less than or equal to 170um, the overall size of the surface acoustic wave device is small, and the wafer has enough strength in the ball implantation process. And the metallurgical connection between the solder balls and the wafer bonding pads can further avoid the problems of short circuit, connection failure and the like caused by smaller size. The surface acoustic wave device manufactured by the method has small thickness and good wafer surface quality, and can meet the current requirement on device miniaturization.
The radio frequency module comprises one or more of a power amplifier, an antenna, a low noise amplifier and a switch, and the surface acoustic wave device. The radio frequency module manufactured by the surface acoustic wave device has small thickness and good performance, and is beneficial to improving the production efficiency and reducing the cost.
Exemplary embodiments of a method of manufacturing a surface acoustic wave device, and a radio frequency module set forth in the present application are described and/or illustrated in detail above. Embodiments of the present application are not limited to the specific embodiments described herein, but rather, components and/or steps of each embodiment may be utilized independently and separately from other components and/or steps described herein. Each component and/or each step of one embodiment may also be used in combination with other components and/or steps of other embodiments. When introducing elements/components/etc. that are described and/or illustrated herein, the terms "a," "an," "the second," and "the above" etc. are intended to mean that there are one or more of the elements/components/etc. The terms "comprising," "including," and "having" are intended to be inclusive and mean that there may be additional elements/components/etc., in addition to the listed elements/components/etc.
The embodiments of the present application are not limited to the specific embodiments described herein, but rather, components of each embodiment may be utilized independently and separately from other components described herein. Each component of one embodiment may also be used in combination with other components of other embodiments. In the description of the present specification, the terms "one embodiment," "some embodiments," "other embodiments," and the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the embodiment. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above is only an alternative embodiment of the application embodiment, and is not intended to limit the application embodiment, and various modifications and changes may be made to the application embodiment by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the embodiments of the application should be included in the protection scope of the embodiments of the application.
Claims (19)
1. A method of manufacturing a surface acoustic wave device, comprising the steps of:
s1, a wafer bonding pad forming step, namely providing a wafer, wherein the wafer is provided with a first wafer surface and a second wafer surface which are arranged oppositely, the first wafer surface is provided with a plurality of functional areas responding to surface acoustic waves and a non-functional area among the plurality of functional areas, and the wafer bonding pad is formed in the non-functional area;
s2, a ball mounting step, wherein a plurality of solder balls are formed on the surface of the wafer bonding pad, and the solder balls are in metallurgical connection with the wafer bonding pad;
s3, a thinning step, namely fixing the surface of the first wafer of the wafer on a clamping device, thinning the surface of the second wafer, wherein the thickness of the thinned wafer is less than or equal to 170um;
s4, a wafer cutting step, namely arranging cutting channels between adjacent solder balls in the wafer bonding pads, and cutting the wafer along the cutting channels to form a plurality of grains;
s5, a crystal grain flip-chip step, namely providing a substrate, wherein a substrate bonding pad is arranged on the surface of the substrate, and the crystal grain is flip-chip bonded to the substrate bonding pad through the solder ball;
s6, a packaging step, namely covering the surface of the substrate and the surface of the crystal grain, which is far away from the substrate, by a packaging structure to form a packaging body;
and S7, cutting the packaging body to form a plurality of surface acoustic wave devices.
2. The method of manufacturing a surface acoustic wave device according to claim 1, wherein in step S2, the solder wire is melted into a solder ball by spark discharge, and the solder ball is moved to the surface of the wafer pad for ultrasonic thermocompression bonding, thereby achieving metallurgical connection of the solder ball and the wafer pad.
3. The method of manufacturing a surface acoustic wave device according to claim 2, wherein after the planting of the solder balls is completed at the first solder points on the surface of the wafer pad, the wire tails of the solder balls are cut, and then the solder balls are moved from the first solder points to the second solder points, and the planting of the next solder balls is continued.
4. The method of manufacturing a surface acoustic wave device according to claim 2, wherein in step S2, the wire diameter is 15um to 22um, and the solder ball diameter is 40um to 80um.
5. The method of manufacturing a surface acoustic wave device according to claim 2, wherein in step S2, the process parameters of the ultrasonic thermocompression bonding are: the ultrasonic current is 10 mA-90 mA, the ball implantation time is 5ms-40ms, and the ball implantation pressure is 10 g-60 g.
6. The method of manufacturing a surface acoustic wave device according to claim 1, wherein a projected total area of the solder balls on the substrate is 10% -95% of a projected total area of the wafer pads on the substrate.
7. The method of manufacturing a surface acoustic wave device according to claim 1, wherein in step S3, the second wafer surface is thinned by a thinning apparatus, a movement track is provided along the second wafer surface, the movement track is one or more of concentric circles, a spiral line, and a positive chord line, and the thinning apparatus moves along the movement track while rotating.
8. The method of manufacturing a surface acoustic wave device according to claim 1, wherein in step S1, a pad width of the wafer pad is 100um or less.
9. The method of manufacturing a surface acoustic wave device according to claim 1, wherein in step S1, the wafer pad is a laminated structure composed of at least one first pad unit.
10. The method of manufacturing a surface acoustic wave device according to claim 9, wherein the first pad unit includes a first metal layer and a first transition layer, the first transition layer being provided on a surface of the wafer pad, the first metal layer being provided on the first transition layer.
11. The method of manufacturing a surface acoustic wave device according to claim 10, wherein the first transition layer is made of Ti or an alloy containing Ti as a main component.
12. The method for manufacturing a surface acoustic wave device according to claim 10, wherein the thickness of the first transition layer is 2000nm or less, preferably 1000nm or less, and more preferably 500nm or less.
13. The method according to claim 10, wherein the first metal layer is made of Al or an alloy containing Al as a main component, or wherein the first metal layer is made of Au or an alloy containing Au as a main component.
14. The method of manufacturing a surface acoustic wave device according to claim 10, wherein the stacked structure further includes a second pad unit including a second metal layer and a second transition layer, the second transition layer being provided to the first metal layer of the first pad unit, the second metal layer being provided to the second transition layer.
15. The method according to claim 14, wherein the material of the second metal layer is Al or an alloy containing Al as a main component, or wherein the material of the second metal layer is Au or an alloy containing Au as a main component.
16. A surface acoustic wave device manufactured by the manufacturing method according to any one of claims 1 to 15, characterized in that the surface acoustic wave device comprises:
a substrate;
the crystal grain is arranged on the substrate in a flip-chip manner through a solder ball, and the thickness of the crystal grain is less than or equal to 170um;
and the packaging structure covers the substrate and the surface of the crystal grain, which is far away from the substrate.
17. The surface acoustic wave device of claim 16, wherein the die has a wafer pad having a width of 100um or less.
18. The surface acoustic wave device according to claim 16, wherein the diameter of the solder balls is 40um to 80um, and the number of the solder balls is at least one.
19. A radio frequency module comprising one or more of a power amplifier, an antenna, a low noise amplifier, a switch, and a surface acoustic wave device as claimed in any one of claims 16-18.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116722838A (en) * | 2023-06-29 | 2023-09-08 | 北京超材信息科技有限公司 | Surface acoustic wave filter, surface acoustic wave filter set, multiplexer and radio frequency module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116722838A (en) * | 2023-06-29 | 2023-09-08 | 北京超材信息科技有限公司 | Surface acoustic wave filter, surface acoustic wave filter set, multiplexer and radio frequency module |
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