CN116316067A - Electrical heating wide tuning range narrow linewidth DFB laser and manufacturing method thereof - Google Patents
Electrical heating wide tuning range narrow linewidth DFB laser and manufacturing method thereof Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 69
- 239000002184 metal Substances 0.000 claims abstract description 69
- 230000010363 phase shift Effects 0.000 claims abstract description 58
- 238000002161 passivation Methods 0.000 claims description 22
- 238000005253 cladding Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000005485 electric heating Methods 0.000 abstract description 7
- 230000008859 change Effects 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses an electric heating DFB laser with wide tuning range and narrow linewidth and a manufacturing method thereof, wherein the structure comprises a DFB epitaxial structure, a cathode metal, an anode metal and a heating electrode metal, and the front surface of the epitaxial structure is provided with a ridge waveguide; the epitaxial structure comprises a phase shift region and a gain region along the cavity length direction of the DFB laser, and one end of the cavity length direction is a reflecting end face, wherein the phase shift region is close to the reflecting end face; the epitaxial structure of the gain region comprises a grating, the epitaxial structure of the phase shift region does not comprise a grating, the anode metal covers more than 70% of the gain region and the ridge waveguide of the phase shift region, and the heating electrode metal is positioned on one side of the ridge waveguide of the phase shift region. According to the invention, the heating electrode metal is introduced into the chip reflecting end, and the epitaxial design of part of gratings is combined, so that the current-controlled rapid and wide-range laser tuning is realized, and the function of fine mode-jump-free frequency tuning is realized.
Description
Technical Field
The invention belongs to the technical field of lasers, and particularly relates to an electric heating wide tuning range and narrow linewidth DFB laser and a manufacturing method thereof.
Background
The laser radar adopting the Frequency Modulation Continuous Wave (FMCW) technology has the advantages of simultaneously measuring distance and speed, strong capability of resisting ambient light interference and the like, and is an important development direction of the laser radar. The FMCW radar needs a laser (about 20 GHz) with a narrow linewidth (about 100 kHz), a fast mode-jump-free and a wide tuning range, and the narrow linewidth semiconductor laser has small volume and high efficiency and has ideal application prospect in the field of FMCW radar light sources.
The conventional narrow linewidth semiconductor laser mainly comprises: distributed feedback lasers (DFB), distributed bragg reflector lasers (DBR), and external cavity semiconductor lasers (ECL). The narrow linewidth DFB has the advantages of large-scale mass production and low cost because of simpler and mature epitaxy and production process, but the mode-jump-free tuning range is generally smaller, and the requirement of a wide tuning range is difficult to meet.
The prior heating technology heats the whole cavity of the DFB laser, can change the period and equivalent refractive index of the DFB grating, has a larger tuning range, but on one hand, mode jump is easy to occur and tuning is unstable; on the other hand, negative effects such as reduced internal quantum efficiency, reduced output power, and increased threshold value are generated. The above problems limit its application to FMCW laser radars.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides an electric heating DFB laser with wide tuning range and narrow linewidth and a manufacturing method thereof.
In order to achieve the above object, the technical scheme of the present invention is as follows:
an electrically heated wide tuning range narrow linewidth DFB laser, characterized by: the device comprises a DFB epitaxial structure, a negative electrode metal, a positive electrode metal and a heating electrode metal, wherein a ridge waveguide is arranged on the front surface of the epitaxial structure; the epitaxial structure comprises a phase shift region and a gain region along the cavity length direction of the DFB laser, and one end of the cavity length direction is a reflecting end face, wherein the phase shift region is close to the reflecting end face; the epitaxial structure of the gain region comprises a grating, the epitaxial structure of the phase shift region does not comprise a grating, the anode metal covers more than 70% of the gain region and the ridge waveguide of the phase shift region, and the heating electrode metal is positioned on one side of the ridge waveguide of the phase shift region.
Optionally, the epitaxial structure includes a substrate, a lower cladding layer, an active layer, an upper cladding layer and a contact layer from bottom to top, wherein the active layer penetrates through the phase shift region and the gain region, and the grating is disposed above or below the active layer of the gain region.
Optionally, the upper cladding layer or the lower cladding layer includes a grating forming layer therein, the grating forming layer of the gain region is etched to form a grating pattern, and the phase shift region does not include the grating forming layer or includes the grating forming layer but is not etched.
Optionally, the negative electrode metal is an N-electrode metal; the negative electrode metal is arranged on the back surface of the substrate, or the n-type doped region of the epitaxial structure is exposed by front surface etching of the epitaxial structure, and the negative electrode metal is arranged on the n-type doped region.
Optionally, the phase shift region occupies 5% -20% of the cavity length of the laser.
Optionally, the front surface of the epitaxial structure is further covered with a passivation layer, the passivation layer is provided with an opening on the ridge waveguide, the anode metal and the heating electrode metal are arranged on the passivation layer, and the anode metal is in contact with the ridge waveguide through the opening.
Optionally, the passivation layer is a silicon dioxide or silicon nitride film with the thickness of 100nm-1000nm; the heating electrode metal is a platinum or titanium metal film, the thickness is 100-1000nm, the width is 5-50um, the length is more than 70% of the length of the phase shift region, the resistance of the heating electrode is more than 100 omega, and the distance between the heating electrode and the ridge waveguide is less than 50um.
Optionally, the types of the gratings include a uniform grating, a 1/4 phase shift grating, a multi-phase shift grating, and a period modulation grating, and the period of the grating is determined according to the emission wavelength of the laser.
The manufacturing method of the electrically heated DFB laser with wide tuning range and narrow linewidth comprises the following steps:
1) Growing a primary epitaxial layer of the DFB laser on a substrate, defining a phase shift region and a gain region, manufacturing a partial grating pattern through electron beam exposure, and forming a partial grating through etching, wherein the partial grating is positioned in the gain region;
2) Performing secondary epitaxy;
3) Manufacturing a ridge waveguide;
4) Depositing metal on the ridge waveguides of the phase shift region and the gain region and the corresponding metal wire bonding region as positive metal;
5) Depositing metal on one side of the ridge waveguide of the phase shift region to manufacture heating electrode metal;
6) And depositing negative electrode metal.
Wherein, the steps 4) to 6) have no sequence.
Optionally, between the step 3) and the step 4), a step of depositing a passivation layer on the surface of the structure formed in the step 3) and opening the passivation layer over the ridge waveguide is further included.
The beneficial effects of the invention are as follows:
1) The epitaxial structure forms a gain region and a phase shift region close to a reflecting end through the design of part of the grating, heating electrode metal is introduced into the phase shift region, and the grating-free part of the waveguide is heated by electric heating power to form refractive index change, so that the change of phase and wavelength is caused, the rapid and wide-range laser tuning of current control is realized, the function of fine mode-jump-free frequency tuning is realized, the tuning range and the tuning rate of the DFB laser are improved, and the FMCW radar application is sufficient at the expiration;
2) Only the heating electrode metal is introduced into the reflecting end, so that the junction temperature of the whole active layer is less influenced, and the threshold value and the inclined efficiency are less influenced; the structural design of partial grating is adopted, the integrity of an active region in a cavity is reserved, the function of generating gain by a phase shift region is maintained, and the threshold value of a laser is reduced and the power is improved;
3) The manufacturing process is simple and the cost is low.
Drawings
Fig. 1 is a schematic top view of the electrically heated DFB laser of example 1 with wide tuning range and narrow linewidth;
FIG. 2 is a cross-sectional view taken along the direction a-a' in FIG. 1;
FIG. 3 is a cross-sectional view taken along the direction b-b' in FIG. 1;
fig. 4 is a schematic cross-sectional view (corresponding to the cross-section of fig. 2) of the electrically heated DFB laser of example 2 with a wide tuning range and a narrow linewidth.
Detailed Description
The invention is further explained below with reference to the drawings and specific embodiments. The drawings of the present invention are merely schematic to facilitate understanding of the present invention, and specific proportions thereof may be adjusted according to design requirements. The definition of the context of the relative elements and the front/back of the figures described herein should be understood by those skilled in the art to refer to the relative positions of the elements and thus all the elements may be reversed to represent the same elements, which are all within the scope of the present disclosure.
Example 1
Referring to fig. 1 to 3, the electrically heated DFB laser of embodiment 1 with a wide tuning range and a narrow linewidth has an epitaxial structure 1 including a substrate 11, a lower cladding layer 12, an active layer 13, an upper cladding layer 14, and a contact layer 15 from bottom to top, and the front surface of the epitaxial structure 1 is formed with a ridge waveguide 16 along the cavity length direction (shown as x direction in the drawing). The epitaxial structure 1 comprises a phase shift region A and a gain region B along the length direction of the cavity, one end of the DFB laser in the length direction of the cavity is a reflecting end face HR, and the phase shift region A is close to the reflecting end face HR. The contact layer 15 is covered with a passivation layer 2, the passivation layer 2 is provided with an opening on the ridge waveguide 16, the opening length can be a full cavity length range, for example, and the positive electrode metal 3 covers the ridge waveguide 16 in the whole cavity length direction and contacts with the ridge waveguide 16 through the opening. In this embodiment, the positive electrode metal 3 extends from the ridge waveguide 16 to the surface of the passivation layer 2 on both sides in the gain region B, and extends from the ridge waveguide 16 to the surface of the passivation layer 2 on one side in the phase shift region a. The heating electrode metal 4 is arranged on the passivation layer 2 on the other side of the ridge waveguide of the phase shifting region A. The epitaxial structure of the gain region B comprises a grating 17 and the epitaxial structure of the phase shift region a does not comprise a grating. The negative metal 5 is located on the back side of the substrate 11. Wherein the gain region B provides optical gain and grating fundamental mode selection functions, the phase shift region A provides fine mode-skip-free frequency tuning functions, and the length of the phase shift region A occupies 1/10 of the cavity length.
Conventional DFB laser epitaxial structures may be applied to this embodiment. Wherein the active layer 13 extends through the phase shift region a and the gain region B, i.e. covers the full range of the laser cavity length. The grating 17 may be disposed above or below the active layer 13 in the gain region B. For example, the upper cladding layer 14 includes a grating formation layer, a grating cladding layer, an upper waveguide layer, and the like, and when the grating is manufactured by etching the grating formation layer, a partial etching process is used to etch only the gain region B and not the phase shift region a, thereby forming a partial grating structure. The grating types include uniform gratings, 1/4 phase shift gratings, multi-phase shift gratings, periodic modulation gratings, etc., and the period of the grating is determined according to the emission wavelength of the laser. In addition, in other structures, the phase shift region a may not include the grating formation layer.
A conventional DFB laser ridge waveguide structure may be applied to the present embodiment. For example, two trenches 18 are etched on the front surface of the epitaxial structure 1, bottoms of the two trenches 18 are formed at any position between the contact layer 15 and the active layer 13, and a ridge waveguide 16 is formed between the two trenches 18. The ridge waveguide 16 has a width of, for example, about 2-3um and the trench 18 has a width of about 15um. In this embodiment, in the phase shift region a, the positive electrode metal 3 is located on one side of the ridge waveguide 16, covers the surface of the one side trench 18, the surface of the ridge waveguide 16, and extends to cover at least part of the bottom of the other side trench 18. The positive electrode metal 3 covers the edge of the reflecting end face to the surface of the phase shift region a to avoid light absorption. The heater electrode metal 4 is located on the surface outside the other side groove 18 of the phase shift region a, extending in the cavity length direction and having positive and negative access regions at both ends. The heating electrode metal 4 is a strip-shaped platinum metal film, the thickness is about 500nm, the width is about 10um, the length accounts for more than 70% of the length of the phase shift region, the resistance of the heating electrode is more than 100 omega, and the distance between the heating electrode metal and the ridge waveguide 16 is 20um. The passivation layer 2 is a silicon dioxide or silicon nitride film with the thickness of about 300nm, and is an insulator, and has the function of isolating current.
When the DFB active layer is not modulated, the period and equivalent refractive index of the DFB grating are kept stable, and the resonant frequency is mainly influenced by the cavity length, and is specifically expressed as follows: v<n a >*La+<n p >* Lp) =m×c/2. Wherein, v is the resonant frequency,<na>、<np>the equivalent refractive indexes of the DFB gain region and the phase shift region are respectively, la and Lp are the lengths of the DFB gain region and the phase shift region respectively, c is the speed of light in vacuum, and m represents the number of longitudinal modes. Keeping the temperature and current of the DFB gain region unchanged<n a >* La remained stable. When the refractive index of the material of the phase shifting region is slightly changed, the mode m is kept unchanged, and the resonance frequency is free from jumpingAnd (5) mode tuning.
The refractive index of the phase shift region is affected by temperature, and the refractive index of the phase shift region can be controlled by heating, so that the tuning of the laser is achieved. In the embodiment, a thin metal heating plate is introduced at a high reflection film plating end (HR) of a chip, and a part of grating epitaxy design is combined, and the grating-free part waveguide is heated by using electric heating power to form refractive index change, so that the change of phase and wavelength is caused, and the rapid and wide-range laser tuning of current control is realized. Because the heating plate is only introduced at the HR end, the junction temperature of the whole active layer is less influenced, and the threshold value and the oblique efficiency are less influenced. The tuning range and tuning rate of the DFB laser are increased to expire sufficient for FMCW radar applications.
In this embodiment, the phase shift region is a grating-free active waveguide, and the phase shift region has the same structure as the active region of the gain region, so that the integrity of the active region in the cavity is maintained, and the phase shift region can be formed only by one epitaxial growth. On one hand, the method is compatible with the conventional DFB technology without butt joint growth of passive waveguides, and on the other hand, the function of generating gain by a phase shift region is maintained, so that the method is beneficial to reducing the threshold value of a laser and improving the power.
The manufacturing method of the DFB laser with the wide tuning range and the narrow linewidth by electric heating comprises the following process steps:
1) Growing a primary epitaxial layer of the DFB laser on a substrate, defining a phase shift region and a gain region, manufacturing a partial grating pattern on the primary epitaxial layer through electron beam exposure, forming a partial grating through etching, wherein the partial grating is positioned in the gain region, and the phase shift region is not etched;
2) Performing secondary epitaxy, including ridge waveguide structure materials, contact layers and the like;
3) Manufacturing a ridge waveguide by adopting a conventional chip manufacturing process;
4) Depositing a passivation layer, and opening the passivation layer on the ridge waveguide;
5) Depositing metal on the ridge waveguide of the phase shift area and the gain area and the corresponding metal wire bonding area to manufacture positive metal, wherein the positive metal is contacted with the contact layer of the ridge waveguide;
6) Depositing metal on one side of the ridge waveguide of the phase shift region to manufacture heating electrode metal;
7) A negative metal is deposited on the back side of the substrate.
Based on the conventional DFB structure, the grating adopts a partial grating design, and utilizes the electric heating effect at the HR end to realize rapid and wide-range tuning of current, without butt-jointing a passive waveguide, and the manufacturing method has small difference with the existing DFB and low cost.
Conventionally, the positive electrode metal is P-electrode metal, and the negative electrode metal is N-electrode metal. In other embodiments, the n-doped region of the epitaxial layer (e.g., the substrate 11 or the lower cladding layer 12) may also be etched through the epitaxial layer to expose the n-doped region with a negative metal to provide another way of connecting wires.
Example 2
Referring to fig. 4, embodiment 2 differs from embodiment 1 in that the opening of the passivation layer 2 on the ridge waveguide is not to the edge of the light exit end (the antireflection film coated end AR, opposite to the reflection end face HR in the cavity length direction) but to the edge 10um, i.e., the passivation layer 2 remains partially unopened. The structure can prevent electric injection and improve the catastrophic cavity surface damage (COD) of the end face of the laser, thus being beneficial to improving the reliability of the laser.
The above embodiment is only used to further illustrate an electrically heated DFB laser with a wide tuning range and a narrow linewidth and a method for manufacturing the same, but the invention is not limited to the embodiment, and any simple modification, equivalent variation and modification of the above embodiment according to the technical substance of the invention falls within the scope of the technical solution of the invention.
Claims (10)
1. An electrically heated wide tuning range narrow linewidth DFB laser, characterized by: the device comprises a DFB epitaxial structure, a negative electrode metal, a positive electrode metal and a heating electrode metal, wherein a ridge waveguide is arranged on the front surface of the epitaxial structure; the epitaxial structure comprises a phase shift region and a gain region along the cavity length direction of the DFB laser, and one end of the cavity length direction is a reflecting end face, wherein the phase shift region is close to the reflecting end face; the epitaxial structure of the gain region comprises a grating, the epitaxial structure of the phase shift region does not comprise a grating, the anode metal covers more than 70% of the gain region and the ridge waveguide of the phase shift region, and the heating electrode metal is positioned on one side of the ridge waveguide of the phase shift region.
2. The electrically heated wide tuning range narrow linewidth DFB laser of claim 1, wherein: the epitaxial structure comprises a substrate, a lower cladding layer, an active layer, an upper cladding layer and a contact layer from bottom to top, wherein the active layer penetrates through the phase shift region and the gain region, and the grating is arranged above or below the active layer of the gain region.
3. The electrically heated wide tuning range narrow linewidth DFB laser of claim 2, wherein: the upper cladding layer or the lower cladding layer comprises a grating forming layer, the grating forming layer of the gain region is etched to form a grating pattern, and the phase shifting region does not contain the grating forming layer or contains the grating forming layer but is not etched.
4. The electrically heated wide tuning range narrow linewidth DFB laser of claim 1, wherein: the length of the heating electrode metal accounts for more than 70% of the length of the phase shifting region, and the distance between the heating electrode metal and the ridge waveguide is less than 50um; the resistance of the heating electrode metal is more than 100 omega.
5. The electrically heated wide tuning range narrow linewidth DFB laser of claim 1, wherein: the phase shift region accounts for 5% -20% of the cavity length of the laser.
6. The electrically heated wide tuning range narrow linewidth DFB laser of claim 1, wherein: the front surface of the epitaxial structure is also covered with a passivation layer, the passivation layer is provided with an opening on the ridge waveguide, the anode metal and the heating electrode metal are arranged on the passivation layer, and the anode metal is contacted with the ridge waveguide through the opening.
7. The electrically heated wide tuning range narrow linewidth DFB laser of claim 6, wherein: the passivation layer is a silicon dioxide or silicon nitride film with the thickness of 100nm-1000nm; the heating electrode metal is a platinum or titanium metal film, the thickness is 100-1000nm, and the width is 5-50um.
8. The electrically heated wide tuning range narrow linewidth DFB laser of claim 1, wherein: the types of gratings include uniform gratings, 1/4 phase shift gratings, multiphasic gratings, and periodic modulated gratings, the period of which is determined according to the emission wavelength of the laser.
9. A method of fabricating an electrically heated wide tuning range narrow linewidth DFB laser as recited in any of claims 1-8 comprising the steps of:
1) Growing a primary epitaxial layer of the DFB laser on a substrate, defining a phase shift region and a gain region, manufacturing a partial grating pattern through electron beam exposure, and forming a partial grating through etching, wherein the partial grating is positioned in the gain region;
2) Performing secondary epitaxy;
3) Manufacturing a ridge waveguide;
4) Depositing metal on the ridge waveguides of the phase shift region and the gain region and the corresponding metal wire bonding region as positive metal;
5) Depositing metal on one side of the ridge waveguide of the phase shift region to manufacture heating electrode metal;
6) And depositing negative electrode metal.
10. The method of manufacturing according to claim 9, wherein: and between the step 3) and the step 4), the method further comprises the step of depositing a passivation layer on the surface of the structure formed in the step 3) and opening the passivation layer on the ridge waveguide.
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| CN202310089224.3A CN116316067A (en) | 2023-02-09 | 2023-02-09 | Electrical heating wide tuning range narrow linewidth DFB laser and manufacturing method thereof |
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| CN202310089224.3A CN116316067A (en) | 2023-02-09 | 2023-02-09 | Electrical heating wide tuning range narrow linewidth DFB laser and manufacturing method thereof |
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