CN116314144A - High-heat-dissipation electromagnetic shielding packaging structure and manufacturing method thereof - Google Patents
High-heat-dissipation electromagnetic shielding packaging structure and manufacturing method thereof Download PDFInfo
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- CN116314144A CN116314144A CN202310001975.5A CN202310001975A CN116314144A CN 116314144 A CN116314144 A CN 116314144A CN 202310001975 A CN202310001975 A CN 202310001975A CN 116314144 A CN116314144 A CN 116314144A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052802 copper Inorganic materials 0.000 claims abstract description 67
- 239000010949 copper Substances 0.000 claims abstract description 67
- 239000002184 metal Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 230000017525 heat dissipation Effects 0.000 claims abstract description 14
- 238000009713 electroplating Methods 0.000 claims abstract description 12
- 238000007789 sealing Methods 0.000 claims abstract description 9
- 229910000679 solder Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 238000011161 development Methods 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000012858 packaging process Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 description 6
- 238000003825 pressing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention discloses a high heat dissipation electromagnetic shielding packaging structure and a manufacturing method thereof, wherein the packaging structure comprises: the copper electroplating device comprises a copper carrier and an electroplated copper layer, wherein the electroplated copper layer is arranged on the copper carrier and is provided with a groove; the chip is embedded in the groove of the electroplated copper layer and is provided with a conductive structure, and the conductive structure of the chip faces to the outer side; a plastic sealing layer which wraps the chip, and the conductive structure of the chip is exposed outside the plastic sealing layer; at least one layer of metal circuit structure which is arranged above the chip and is electrically connected with the conductive structure of the chip; at least one insulating medium layer pressed on the metal circuit structure; and the electric lead-out structure is electrically connected with the metal circuit structure. The packaging structure has better heat dissipation effect and electromagnetic shielding effect, and can solve the problem of warping.
Description
Technical Field
The invention relates to the technical field of semiconductor chip packaging, in particular to a high-heat-dissipation electromagnetic shielding packaging structure and a manufacturing method thereof.
Background
With the high-speed development of modern electronic technology, the high heat dissipation requirement of electronic packaging products is higher and higher; the existing packaging technology cannot realize the heat dissipation requirement of higher power consumption due to the self structural limitation, and the problem of warping easily occurs. In addition, in highly integrated circuit boards, electronic products are required to achieve electromagnetic shielding effects; in the existing packaging structure, the electromagnetic shielding mode of the chip has low accuracy and poor electromagnetic shielding effect.
Disclosure of Invention
In order to solve the above technical problems, the present invention is directed to a high heat dissipation electromagnetic shielding package structure and a method for manufacturing the same. The packaging structure has better heat dissipation effect and electromagnetic shielding effect, and can solve the problem of warping.
In order to achieve the technical purpose and the technical effect, the invention is realized by the following technical scheme:
a high heat dissipation electromagnetic shielding package structure, comprising:
the copper electroplating device comprises a copper carrier and an electroplated copper layer, wherein the electroplated copper layer is arranged on the copper carrier and is provided with a groove;
the chip is embedded in the groove of the electroplated copper layer and is provided with a conductive structure, and the conductive structure of the chip faces to the outer side;
a plastic sealing layer which wraps the chip, and the conductive structure of the chip is exposed outside the plastic sealing layer;
at least one layer of metal circuit structure which is arranged above the chip and is electrically connected with the conductive structure of the chip;
at least one insulating medium layer pressed on the metal circuit structure;
and the electric lead-out structure is electrically connected with the metal circuit structure.
Further, the chip is attached to the grooves of the electroplated copper layer through conductive glue or a conductive DAF film.
Furthermore, the packaging structure also comprises a solder mask layer positioned at the outermost side, and the solder mask layer is pressed on the metal circuit structure.
Further, the electrical guiding structure is a solder ball.
The invention further provides a manufacturing method of the high-heat-dissipation electromagnetic shielding packaging structure, which comprises the following steps:
s1, providing a copper plate as a copper carrier, laminating a photosensitive film on the copper carrier, removing the redundant film through exposure and development, and forming an electroplated copper layer through an electroplating process; grooves are distributed in the electroplated copper layer;
s2, mounting and embedding a chip with a conductive structure on the front surface into a groove of the electroplated copper layer; the conductive structure of the chip faces to the outer side;
s3, forming a plastic layer for wrapping the chip through a plastic packaging process;
s4, thinning the plastic sealing layer to expose the conductive structure of the chip;
s5, forming at least one layer of metal circuit structure electrically connected with the conductive structure of the chip above the chip, and laminating an insulating medium layer on the metal circuit structure;
s6, forming an electrical lead-out structure on the metal circuit structure of the outermost layer;
s7, obtaining the single package structure through cutting.
In step S5, a solder mask layer is further formed on the outermost side of the metal circuit structure.
Further, the metal circuit structure is prepared by sputtering a seed layer, exposing, developing, electroplating and etching which are sequentially carried out.
The beneficial effects of the invention are as follows:
the invention adopts the copper carrier as the substrate, and can effectively improve the warping problem of the packaging structure by utilizing the higher elastic modulus of the copper carrier.
The invention adopts the copper carrier as the substrate, and can effectively improve the heat dissipation performance of the packaging structure.
According to the invention, the copper carrier is used as the substrate, the electroplated copper layer with the grooves is formed on the copper carrier in an electroplating way, and the chip is embedded in the grooves of the electroplated copper layer, so that a better electromagnetic shielding effect can be realized through the cooperation of the copper carrier, the electroplated copper layer and the metal circuit structure of fan-out arrangement.
The copper carrier in the invention can endow the packaging structure with the property of ground or power network, and improve the overall power performance of the packaged product.
Drawings
Fig. 1 is a schematic structural diagram of a high heat dissipation electromagnetic shielding package structure according to an embodiment of the invention.
Fig. 2 is a flow chart of a method for manufacturing a high heat dissipation electromagnetic shielding package structure according to an embodiment of the invention.
Detailed Description
The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby making clear and defining the scope of the present invention.
The preferred embodiment of the high heat dissipation electromagnetic shielding package structure shown in fig. 1 comprises:
a copper carrier 1 and an electroplated copper layer 2, the electroplated copper layer 2 being provided on the copper carrier 1, and the electroplated copper layer 2 having a recess;
a chip 3 embedded in the groove of the electroplated copper layer 2, wherein the chip 3 has a conductive structure, and the conductive structure of the chip 3 faces to the outer side;
a plastic layer 4 which encapsulates the chip 3, and the conductive structure of the chip 3 is exposed outside the plastic layer 4;
at least one layer of metal circuit structure 5 arranged above the chip 3 and electrically connected with the conductive structure of the chip 3;
at least one insulating dielectric layer 6, which is pressed on the metal circuit structure 5;
and an electrical lead-out structure 7 electrically connected to the metal wiring structure 5.
Wherein, the chip 3 is attached to the groove of the electroplated copper layer 2 through conductive glue or conductive DAF film. In this embodiment, the chip 3 is mounted in the recess of the electroplated copper layer 2 by means of conductive glue.
In this embodiment, the metal line structure 5 has two layers, the insulating dielectric layer 6 has two layers, the first layer metal line structure is directly connected with the conductive structure of the chip 3, the first layer insulating dielectric layer is pressed with the first layer metal line structure, the second layer insulating dielectric layer is arranged on the first insulating dielectric layer, the second layer insulating dielectric layer is provided with a through hole, and the second layer metal line structure is formed in the through hole of the second insulating dielectric layer; the outermost side of the packaging structure is also provided with a solder mask layer 8; the solder mask layer 8 is provided with openings corresponding to the positions of the second-layer metal circuit structures, bonding pads are formed in the openings, and an electrical lead-out structure 7 electrically connected with the metal circuit structures 5 is formed on the bonding pads. In this embodiment, the electrical lead-out structure 7 is a solder ball, specifically a solder ball.
The manufacturing method of the high-heat-dissipation electromagnetic shielding packaging structure comprises the following steps:
s1, providing a copper plate as a copper carrier 1, laminating a photosensitive film on the copper carrier 1, removing the redundant film through exposure and development according to a pattern design, and then forming an electroplated copper layer 2 through an electroplating process; grooves 21 are distributed in the electroplated copper layer 2;
s2, attaching and embedding the chip 3 with the conductive structure on the front surface into the groove 21 of the electroplated copper layer 2; the conductive structure of the chip 3 faces outward;
s3, forming a plastic layer 4 for wrapping the chip 3 through a plastic packaging process;
s4, grinding and thinning the plastic sealing layer 4; in this embodiment, after thinning, both the surface of the electroplated copper layer 2 and the conductive structure of the chip 3 are exposed;
s5, forming a metal circuit structure 5 electrically connected with the conductive structure of the chip above the chip 3 through processes such as sputtering seed layer, exposure, development, electroplating and etching which are sequentially performed, then pressing two insulating medium layers 6, forming a through hole on the insulating medium layers 6 through a laser drilling process, and forming a second layer of metal circuit structure 5 in the through hole through processes such as sputtering seed layer, exposure, development, electroplating and etching which are sequentially performed; then, pressing a solder mask layer 8 on the second insulating dielectric layer 6 and the metal circuit structure 5 of the second layer;
s6, forming an opening corresponding to the position of the metal circuit structure 5 of the second layer on the solder mask layer 8, forming a bonding pad in the opening, implanting balls at the bonding pad, and forming an electrical lead-out structure 7 electrically connected with the metal circuit structure 5;
s7, obtaining the single package structure through cutting.
Compared with the prior art, the invention has the following advantages:
the copper carrier 1 is used as the substrate, and the higher elastic modulus of the copper carrier can be used for effectively improving the warping problem of the packaging structure;
according to the invention, the copper carrier 1 is used as a substrate, so that the heat dissipation performance of the packaging structure can be effectively improved;
according to the invention, the copper carrier 1 is adopted as a substrate, the electroplated copper layer 2 with the groove is formed on the copper carrier 1 in an electroplating way, and the chip 3 is embedded into the groove of the electroplated copper layer 2, so that a better electromagnetic shielding effect can be realized through the cooperation of the copper carrier 1, the electroplated copper layer 2 and the fan-out arranged metal circuit structure 5;
the copper carrier 1 in the invention can endow the packaging structure or the power network with the property, and improve the overall power performance of the packaged product.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present invention.
Claims (7)
1. The utility model provides a high heat dissipation electromagnetic shield packaging structure which characterized in that includes:
the copper electroplating device comprises a copper carrier and an electroplated copper layer, wherein the electroplated copper layer is arranged on the copper carrier and is provided with a groove;
the chip is embedded in the groove of the electroplated copper layer and is provided with a conductive structure, and the conductive structure of the chip faces to the outer side;
a plastic sealing layer which wraps the chip, and the conductive structure of the chip is exposed outside the plastic sealing layer;
at least one layer of metal circuit structure which is arranged above the chip and is electrically connected with the conductive structure of the chip;
at least one insulating medium layer pressed on the metal circuit structure;
and the electric lead-out structure is electrically connected with the metal circuit structure.
2. The high heat dissipation electromagnetic shielding package structure of claim 1, wherein the chip is mounted in the groove of the electroplated copper layer by conductive glue or conductive DAF film.
3. The package structure of claim 1, further comprising an outermost solder mask layer bonded to the metal circuit structure.
4. The package of claim 1, wherein the electrical lead-out structure is a solder ball.
5. The manufacturing method of the high-heat-dissipation electromagnetic shielding packaging structure is characterized by comprising the following steps of:
s1, providing a copper plate as a copper carrier, laminating a photosensitive film on the copper carrier, removing the redundant film through exposure and development, and forming an electroplated copper layer through an electroplating process; grooves are distributed in the electroplated copper layer;
s2, mounting and embedding a chip with a conductive structure on the front surface into a groove of the electroplated copper layer; the conductive structure of the chip faces to the outer side;
s3, forming a plastic layer for wrapping the chip through a plastic packaging process;
s4, thinning the plastic sealing layer to expose the conductive structure of the chip;
s5, forming at least one layer of metal circuit structure electrically connected with the conductive structure of the chip above the chip, and laminating an insulating medium layer on the metal circuit structure;
s6, forming an electrical lead-out structure on the metal circuit structure of the outermost layer;
s7, obtaining the single package structure through cutting.
6. The method of claim 5, wherein in step S5, a solder mask layer is further formed on the outermost side of the metal circuit structure.
7. The method of claim 5, wherein the metal circuit structure is prepared by sequentially performing sputtering seed layer, exposure, development, electroplating and etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310001975.5A CN116314144A (en) | 2023-01-03 | 2023-01-03 | High-heat-dissipation electromagnetic shielding packaging structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310001975.5A CN116314144A (en) | 2023-01-03 | 2023-01-03 | High-heat-dissipation electromagnetic shielding packaging structure and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN116314144A true CN116314144A (en) | 2023-06-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310001975.5A Pending CN116314144A (en) | 2023-01-03 | 2023-01-03 | High-heat-dissipation electromagnetic shielding packaging structure and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116995013A (en) * | 2023-09-25 | 2023-11-03 | 甬矽电子(宁波)股份有限公司 | Fan-out type packaging method and fan-out type packaging structure |
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2023
- 2023-01-03 CN CN202310001975.5A patent/CN116314144A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116995013A (en) * | 2023-09-25 | 2023-11-03 | 甬矽电子(宁波)股份有限公司 | Fan-out type packaging method and fan-out type packaging structure |
| CN116995013B (en) * | 2023-09-25 | 2023-12-08 | 甬矽电子(宁波)股份有限公司 | Fan-out type packaging method and fan-out type packaging structure |
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