CN116313283A - Superconducting thin film, preparation method adopting glancing angle deposition and superconducting transition edge detector - Google Patents
Superconducting thin film, preparation method adopting glancing angle deposition and superconducting transition edge detector Download PDFInfo
- Publication number
- CN116313283A CN116313283A CN202211736873.XA CN202211736873A CN116313283A CN 116313283 A CN116313283 A CN 116313283A CN 202211736873 A CN202211736873 A CN 202211736873A CN 116313283 A CN116313283 A CN 116313283A
- Authority
- CN
- China
- Prior art keywords
- film layer
- superconducting
- film
- thin film
- glancing angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
- H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
- H01B12/06—Films or wires on bases or cores
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
The application relates to the technical field of light detection, in particular to a superconducting thin film, a preparation method adopting glancing angle deposition and a superconducting transition edge detector. The method solves the problems that the superconducting transition temperature and the heat capacity cannot be reduced simultaneously in the related art, so that the energy resolution is not improved, and the improvement of sensing efficiency and the like is not facilitated. A method for producing a superconducting thin film, comprising: forming a first film layer and a second film layer stacked on a substrate, the first film layer comprising a material comprising: the superconducting metal material and the material of the second film layer comprise: a normal state metal material; wherein the first film layer and/or the second film layer is formed by glancing angle deposition.
Description
Technical Field
The application relates to the technical field of light detection, in particular to a superconducting thin film, a preparation method adopting glancing angle deposition and a superconducting transition edge detector.
Background
The superconducting edge transition detector (Transition edge sensor, TES) is a thin film device for estimating photon energy by measuring tiny temperature changes, photons falling on the top surface of an absorber are converted from light energy into heat energy to be absorbed by the absorber, the heat is conducted to the TES through the absorber, and the TES converts the tiny temperature changes into electric signals to be read.
Compared with the traditional semiconductor photon detector, the TES senses temperature change by utilizing the characteristic that the resistance suddenly approaches zero when the temperature of a certain substance is reduced to a certain temperature, has higher quantum efficiency, excellent photon number resolution capability and energy resolution capability, and almost negligible dark count rate, is widely applied to the technical fields of astronomical detection, quantum communication, biological fluorescence sensors and the like, and particularly has higher quantum efficiency, so that the TES becomes an ideal photon detector in the aspect of single photon metering.
The energy resolution is a very important indicator in superconducting edge transition detectors, which are typically operated in very low temperature regions, e.g. around tens to hundreds of mK, in order to achieve good energy resolution. The currently known metal superconducting transition temperature is typically between several hundred and several thousand mK, for example, the superconducting transition temperature of titanium is 390mK and the superconducting transition temperature of molybdenum is 920mK. To achieve superconducting transition characteristics at the corresponding temperatures, it is often necessary to deposit normal metal films, such as copper, gold, platinum, etc., on or under the superconducting metal film. By means of proximity effect, a superconducting/normal state metal double-layer or multi-layer film is formed, and the superconducting transition temperature of the whole superconducting film is further lowered.
The proximity effect is due to the interface between the superconducting metal film and the normal metal film, electrons are injected into the superconducting metal interface from one end of the normal metal film, a cavity is formed when the electrons are reflected back to the normal state, one base pair at one end of the superconducting metal is destroyed, and the total result is considered to be that one base pair is transferred from one end of the superconducting metal to one end of the normal metal film, so that the superconducting transition temperature can be reduced. And the more obvious the diffusion between the superconducting metal film and the normal state metal film is, the more favorable the exertion of the superconducting effect is.
Meanwhile, since energy resolution is an important characteristic of the superconducting edge transition detector, the superconducting transition temperature and the heat capacity of the detector have direct influence on the energy resolution, and in order to pursue the extremely high energy resolution, the superconducting transition temperature and the heat capacity of TES are generally required to have lower values. However, at present, the thickness of the normal metal film is generally increased by adjusting the thickness ratio of the normal metal film and the superconducting metal film, for example, reducing the thickness of the superconducting metal film, but such adjustment and control generally changes the heat capacity of the detector. While the heat capacity is generally reduced by reducing the thickness of the superconducting metal film and reducing the area of the device, such a method can result in a reduction of the sensing area of the absorber, which is disadvantageous for maintaining and improving the sensing efficiency.
Disclosure of Invention
Based on the above, the application provides a superconducting thin film, a preparation method adopting glancing angle deposition and a superconducting transition edge detector, which are used for solving the problems that the superconducting transition temperature and the heat capacity cannot be reduced simultaneously in the related technology, thereby being unfavorable for improving the energy resolution ratio, further being unfavorable for improving the sensing efficiency and the like.
In a first aspect, a method for preparing a superconducting thin film is provided, including:
forming a first film layer and a second film layer stacked on a substrate, the first film layer comprising a material comprising: the superconducting metal material and the material of the second film layer comprise: a normal state metal material;
wherein the first film layer and/or the second film layer is formed by glancing angle deposition.
Optionally, when the glancing angle deposition is adopted to prepare the first film layer and/or the second film layer, an included angle between a normal line of the substrate and a normal line of a plane in which the adopted target material is positioned is 40-89 degrees.
Alternatively, the glancing angle deposition is performed at an operating gas pressure of 0.1 to 0.5Pa, and the power density of sputtering is less than or equal to 24W/cm 2 。
Optionally, glancing angle deposition is performed by means of magnetron sputtering and/or thermal evaporation.
Optionally, glancing angle deposition is also performed using electron beam assisted evaporation.
In a second aspect, there is provided a superconducting thin film prepared by the method as described in the first aspect.
Optionally, the first film layer and/or the second film layer are/is a film with a nano inclined columnar structure.
Optionally, the inclination angle of the nano inclined columnar structure is larger than 0 ° and smaller than or equal to 60 °.
Optionally, the first film layer and/or the second film layer has a porosity of 10% to 50%; and/or the number of the groups of groups,
the surface roughness of the first film layer and/or the second film layer is 1 nm-5 nm.
Optionally, the thickness of the first film layer is 20-400 nm, the thickness of the second film layer is 10-400 nm, and the ratio of the thickness of the first film layer to the thickness of the second film layer is 0.5:1-6:1.
In a third aspect, there is provided a superconducting edge transition detector comprising:
the superconducting thin film as described in the second aspect.
Compared with the prior art, the application has the following beneficial effects:
because the first film layer and/or the second film layer are formed by adopting glancing angle deposition, the first film layer and/or the second film layer can be films with nanometer inclined column structures, and compared with films with compact structures, certain gaps are formed between the nanometer inclined column structures in the first film layer and/or the second film layer, so that the first film layer and/or the second film layer has certain porosity, and the heat capacity of the superconducting films can be effectively reduced; meanwhile, the first film layer and/or the second film layer are/is formed by adopting glancing angle deposition, so that the deposition speed of the first film layer and/or the second film layer is slower, and the deposition time of the first film layer and/or the second film layer is controllable in the preparation process, so that a clear interface can be formed between the first film layer and the second film layer, thereby being beneficial to the exertion of superconducting effect, effectively reducing the superconducting transition temperature of the superconducting film, and further achieving the purpose of simultaneously reducing the superconducting transition temperature and the heat capacity of the superconducting film. Meanwhile, as the first film layer and/or the second film layer are/is the films with the inclined column-shaped nano structures, the first film layer and the second film layer can be combined in a mutual engagement mode, so that diffusion between the first film layer and the second film layer is more obvious, the proximity effect can be deepened, and the superconducting transition temperature can be further reduced. The problems that the superconducting transition temperature and the heat capacity cannot be reduced simultaneously in the related technology, so that the energy resolution is not facilitated to be improved, and the sensing efficiency and the like are not facilitated to be improved are solved.
Drawings
Fig. 1 is a schematic diagram showing an SEM cross-sectional view of a metal thin film obtained by sputtering at a glancing angle of 80 ° according to an embodiment of the present application.
Detailed Description
The present application is described in further detail below in connection with specific embodiments. This application may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
The numbering of the components itself, e.g. "first", "second", etc., is used herein merely to distinguish between the described objects and does not have any sequential or technical meaning. The terms "coupled" and "connected," as used herein, are intended to encompass both direct and indirect coupling (coupling), unless otherwise indicated. In the description of the present application, it should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," etc. indicate or refer to an orientation or positional relationship based on that shown in the drawings, merely for convenience of description and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
In this application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
Based on the above technical problems, some embodiments of the present application provide a method for preparing a superconducting thin film, including:
forming a first film layer and a second film layer stacked on a substrate, the first film layer comprising a material comprising: the superconducting metal material and the material of the second film layer comprise: a normal state metal material; wherein the first film layer and/or the second film layer is formed by glancing angle deposition.
Deposition is a process in which vapor phase particles are formed by sputtering or evaporation, and the vapor phase particles are brought into contact with a substrate to thereby form a film by cooling.
Glancing angle refers to the angle between the gas phase particle flow direction and the normal direction of the substrate.
Glancing angle deposition, which may also be referred to as tilt angle deposition, refers herein to the fact that the substrate is no longer facing perpendicularly to the gas phase particle stream, but is tilted at an angle. Thus, a thin film with a nano inclined column structure can be obtained.
In this case, the first film layer is formed by glancing angle deposition, and compared with conventional deposition, the first film layer has larger porosity under the condition that the thickness of the first film layer is fixed, so that the heat capacity of the first film layer can be reduced, and the heat capacity of the whole superconducting film can be reduced. Thereby achieving the purpose of simultaneously and effectively reducing the superconducting transition temperature and the heat capacity of the superconducting film.
Similar to the above-mentioned first film layer formed by glancing angle deposition, when the second film layer formed by glancing angle deposition, the purpose of simultaneously and effectively reducing the superconducting transition temperature and heat capacity of the superconducting film can be achieved.
In the preparation method of the superconducting thin film provided by the embodiment of the application, the first thin film layer and/or the second thin film layer are formed by glancing angle deposition, so that the porosity of the superconducting thin film can be effectively increased and the heat capacity of the superconducting thin film can be reduced under the condition that the thickness of the superconducting thin film is the same, and meanwhile, the interface form between the first thin film layer and the second thin film layer can be effectively adjusted by controlling the deposition time, a clear interface is formed between the first thin film layer and the second thin film layer, and the clear interface is beneficial to the exertion of superconducting effect, so that the superconducting transition temperature of the superconducting thin film can be effectively reduced. In this process, the heat capacity of the superconducting thin film can be reduced while the superconducting transition temperature of the superconducting thin film is reduced, so that the energy resolution can be improved. Meanwhile, as the first film layer and/or the second film layer are/is the films with the inclined column-shaped nano structures, the first film layer and the second film layer can be combined in a mutual engagement mode, so that diffusion between the first film layer and the second film layer is more obvious, the proximity effect can be deepened, and the superconducting transition temperature can be further reduced. The problems that the contradiction between the light-sensitive area and the heat capacity of the superconducting film in a certain thickness range in the related art is unfavorable for improving the energy resolution ratio and further unfavorable for improving the sensing efficiency and the like are solved.
The specific angle of the glancing angle is not limited, as long as the substrate is not vertically facing the gas phase particle stream, but is inclined at a certain angle.
In some embodiments, the angle between the normal line of the substrate and the normal line of the plane of the target is 40 ° to 89 ° when the first film layer and/or the second film layer are prepared by glancing angle deposition.
In these embodiments, by controlling the included angle between the normal line of the substrate and the normal line of the plane of the target material to be used to be 40 ° to 89 °, the included angle between the gas phase particle flow direction and the normal line direction of the substrate can be controlled to be 40 ° to 89 °, that is, the glancing angle is 40 ° to 89 °, so that a film having an inclined pillar-shaped nanostructure can be formed, and further the first film layer and/or the second film layer can have a certain porosity, thereby effectively reducing the heat capacity of the superconducting film.
In some embodiments, according to the correspondence described above, when the first film layer is prepared by glancing angle deposition, the target used may include: superconducting metal. At this time, the first film layer is a superconducting metal film. In preparing the second film layer using glancing angle deposition, the targets used may include: normal state metal. At this time, the second film layer is a normal state metal film.
In some embodiments, the superconducting metal may include: one or both of titanium and molybdenum. The normal state metal may include: copper, gold, and platinum.
In some embodiments, the glancing angle deposition uses an operating gas pressure of 0.1 to 0.5Pa and the deposition uses a sputtering power density of less than or equal to 24W/cm 2 。
In these examples, by controlling the working gas pressure of sputtering and the power density of sputtering within the above-described ranges, the surface and cross-sectional morphology of the sputtered film and the like can be adjusted, so that a film having a nano-tilt column structure can be obtained.
Wherein the power density used for sputtering is also different for different materials.
For example, in the case where the material of the first film layer is titanium, the power density of sputtering is less than or equal to 8W/cm 2 In the case where the material of the first film layer is molybdenum, the power density of sputtering is less than or equal to 24W/cm 2 In the case that the material of the second film layer is gold, the power density of sputtering is less than or equal to 16W/cm 2 。
The working gas used for the glancing angle deposition is not particularly limited, and may be any inert gas, which does not affect the sputter deposition.
In some embodiments, the working gas used for glancing angle deposition is argon.
In some embodiments, the sputtering may be direct current sputtering or radio frequency sputtering.
In the case where the sputtering is radio frequency sputtering, the frequency of the radio frequency sputtering may be 10 to 100KHz.
In some embodiments, glancing angle deposition is performed using magnetron sputtering and/or thermal evaporation.
The magnetron sputtering is to adopt special distribution of orthogonal electromagnetic fields to control the motion track of electrons in an electric field, the electrons move in a cycloid mode under the action of the orthogonal electromagnetic fields and are bound on the surface of a target, so that the motion track of the electrons in plasma is prolonged, the processes of gas molecular collision and ionization are increased, more ions are ionized, the ionization rate of gas is improved, meanwhile, the electrons can be prevented from being directly accelerated to a substrate, the temperature rise of the substrate is reduced, and the discharge can be maintained under lower gas pressure.
Thermal evaporation is one way of vacuum evaporation, and electron beam evaporation is one way of thermal evaporation, and is a method of directly bombarding a target material by using electron beams under vacuum conditions, gasifying and transporting materials to a substrate, and condensing and forming a film on the substrate.
In these embodiments, when magnetron sputtering is employed, the gas pressure during sputtering can be reduced, and at the same time, the sputtering efficiency and deposition rate can be improved, and at the same time, low-temperature deposition can be achieved, whereas when sputtering is performed by electron beam evaporation, the sputtering energy of the sputtered coating film is large, the adhesion to the substrate is good, but the uniformity of the film layer is slightly poor. By combining the two, the uniformity of the film layer can be improved while the adhesive property of the film layer is improved.
In some embodiments, prior to forming the stacked first film layer and second film layer on the substrate, the method may further comprise:
and cleaning the substrate by using a semiconductor cleaning agent.
In these embodiments, the quality of deposition of the first film layer and the second film layer on the substrate may be improved, avoiding the introduction of impurities at the interface between the first film layer and/or the second film layer and the substrate.
In some embodiments, the semiconductor cleaning agent includes solvents such as acetone, isopropyl alcohol, and ultrapure water.
Cleaning the substrate with a semiconductor cleaning agent may include:
the substrate is ultrasonically cleaned for 4-30 min by adopting acetone, then ultrasonically cleaned for 4-30 min by adopting isopropanol, then ultrasonically cleaned for 4-30 min by adopting alcohol, and finally ultrasonically cleaned for 4-30 min by adopting ultrapure water.
In some embodiments, the method further comprises: after the cleaning is completed, the substrate is dried for standby by adopting nitrogen.
Some embodiments of the present application provide a superconducting thin film prepared by the method as described above.
The first film layer and/or the second film layer in the superconducting film are/is formed by adopting glancing angle deposition, so that the first film layer and/or the second film layer are/is films with nanometer inclined columnar structures, the heat capacity of the whole superconducting film can be effectively reduced under the condition that the thicknesses of the first film layer and the second film layer are certain, and the deposition speed is slower when the first film layer and/or the second film layer are/is deposited by adopting glancing angle deposition, so that the deposition time is relatively controllable, a clearer interface can be formed between the first film layer and the second film layer, the exertion of superconducting effect is facilitated, and the superconducting transition temperature of the whole superconducting film can be effectively reduced under the condition that the thicknesses of the first film layer and the second film layer are certain, thereby achieving the purpose of simultaneously reducing the superconducting transition temperature and the heat capacity of the superconducting film. Meanwhile, by controlling the inclination angle and the like of the inclined column-shaped nano structure of the first film layer and/or the second film layer, the first film layer and the second film layer can be combined in a mutual engagement mode, so that diffusion between the first film layer and the second film layer is more obvious, the proximity effect can be deepened, and the superconducting transition temperature can be further reduced.
The surface and the cross-section morphology of the first film layer and/or the second film layer are not particularly limited. So long as the first film layer and/or the second film layer is formed by the glancing angle deposition method described above.
In some embodiments, the first film layer and/or the second film layer is a thin film having a nano-pillar structure.
In these embodiments, thin films having nano-tilt columnar structures may be formed by glancing angle deposition, and certain gaps are formed between the nano-tilt columnar structures, so that the thin films have a certain porosity, and thus the heat capacity of the superconducting thin films may be effectively reduced.
In some embodiments, the inclination angle of the nano inclined columnar structure is greater than 0 ° and less than or equal to 60 °.
The nano inclined columnar structure refers to that the nano rod or the nano column is inclined relative to the substrate, and an included angle between the inclined direction and the plane of the substrate forms an inclined angle of the nano inclined columnar structure, and the included angle is the inclined angle.
In these embodiments, the gap between the nano inclined pillar structures can be effectively improved, so as to improve the porosity and the surface roughness of the film, further reduce the heat capacity of the superconducting film, and simultaneously, the interface between the first film layer and the second film layer is mutually engaged for combination, so that the interface combination strength between the first film layer and the second film layer can be improved, that is, the diffusion between the first film layer and the second film layer is more obvious, thereby deepening the influence of the proximity effect and reducing the superconducting transition temperature.
In some embodiments, the first film layer and/or the second film layer has a porosity of 10% to 50%.
In these embodiments, by limiting the porosity of the first film layer and/or the second film layer to the above-described range, the heat capacity of the superconducting thin film can be effectively reduced.
In some embodiments, the surface roughness of the first film layer and/or the second film layer is 1nm to 5nm.
In some embodiments, the first film layer has a thickness of 20-400 nm, the second film layer has a thickness of 10-400 nm, and the ratio of the thickness of the first film layer to the thickness of the second film layer is 0.5:1-6:1.
In these embodiments, by limiting the thicknesses of the first film layer and the second film layer to the above-described ranges, a visible light-detecting superconducting film and an x-ray light-detecting superconducting film can be obtained.
Some embodiments of the present application provide a superconducting edge transition detector comprising: such as the superconducting thin film described above.
The superconducting edge transition detector can further comprise a lead wire layer, wherein the lead wire layer is connected with the superconducting thin film and used for converting an optical signal received by the superconducting thin film into an electric signal to be output, so that the detection function is achieved.
In some embodiments, the superconducting edge transition detector may further include an optical resonant cavity, and the superconducting thin film may be disposed in the optical resonant cavity, and photon absorption efficiency of the superconducting thin film may be effectively improved by light being reflected back and forth in the optical resonant cavity.
In some embodiments, the photosensitive area of the superconducting thin film is greater than or equal to 1 square micron and less than or equal to 2500 square microns.
In the embodiments, the superconducting thin film can be used for manufacturing superconducting edge transition detectors with different sensitivity requirements so as to meet the use requirements of different application scenes of the superconducting edge transition detectors.
In order to objectively evaluate the technical effects provided by the present application, the present application will be described in detail by way of examples below.
In the following examples, all the raw materials were purchased commercially and, in order to maintain the reliability of the experiment, the raw materials used in the following examples all had the same physical and chemical parameters or were subjected to the same treatment.
Example 1
The preparation method of the superconducting thin film in example 1 is as follows:
step 1), sequentially carrying out ultrasonic cleaning on the 2inch single polished silicon wafer by adopting acetone, isopropanol, alcohol and ultrapure water, wherein the cleaning time is respectively 10 minutes, and finally drying the silicon wafer for standby by adopting nitrogen.
Step 2), placing a silicon wafer, a Ti target (purity 99.995%) and an Au target (purity 99.99%) in a magnetron sputtering deposition system, sequentially preparing a Ti film and an Au film by adopting a magnetron sputtering deposition mode, vacuumizing the system and then introducing argon (purity 99.9999%) into the system in the preparation process of the Ti film, wherein the working pressure of the argon is 0.4Pa, and the power density of the sputtering is 8W/cm by adopting direct current sputtering 2 The glancing angle was 80 °, and the sputtering rate was controlled to 60nm film thickness. In the Au film preparation process, firstly, the system is vacuumized, then argon (purity 99.9999%) is introduced into the system, the working pressure of the argon is 0.4Pa, direct current sputtering is adopted, and the power density of sputtering is 16W/cm 2 The glancing angle was 80 °, and the sputtering rate was controlled until the film thickness was 50 nm.
Example 2
The preparation method of the superconducting film in example 2 was substantially the same as that of example 1, except that argon (purity: 99.9999%) was introduced into the system at a working pressure of 0.1Pa during the preparation of the Ti film in step 2) in example 2, and DC sputtering was employed at a power density of 6W/cm 2 The glancing angle is 89 °. In the Au film preparation process, argon (purity 99.9999%) is introduced into the system, the working pressure of the argon is 0.1Pa, and the power density of sputtering is 15W/cm 2 The glancing angle is 89 °.
Example 3
Example 3 superThe method for producing the conductive film was substantially the same as that of the superconducting film in example 1, except that argon (purity: 99.9999%) was introduced into the system at a working pressure of 0.5Pa during the production of the Ti film in step 2) in example 3, and DC sputtering was employed at a power density of 7W/cm 2 The glancing angle is 40 °. In the Au film preparation process, argon (purity 99.9999%) is introduced into the system, the working pressure of the argon is 0.5Pa, direct current sputtering is adopted, and the power density of sputtering is 15W/cm 2 The glancing angle is 40 °.
Test results:
as shown in fig. 1, the SEM cross-sectional structure of the metal thin film obtained by sputtering at a glancing angle of 80 ° is shown in fig. 1: the grazing angle sputtering mode is adopted, so that the porosity of the film at a certain thickness can be increased, and the heat capacity of the film with the same thickness is further reduced. Meanwhile, the interface characteristic between the double-layer films can be adjusted by changing the glancing angle to adjust the heat capacity, for example, the first film layer and the second film layer can be mutually meshed and combined, the combination firmness between the first film layer and the second film layer is improved, even if diffusion between the first film layer and the second film layer is more obvious, the exertion of superconducting effect is facilitated, and the superconducting transition temperature can be effectively reduced. The problems that the superconducting transition temperature and the heat capacity cannot be reduced simultaneously in the related technology, so that the energy resolution is not facilitated to be improved, and the sensing efficiency and the like are not facilitated to be improved are solved.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the claims. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (10)
1. The preparation method of the superconducting film is characterized by comprising the following steps:
forming a first film layer and a second film layer stacked on a substrate, the material of the first film layer including: the superconducting metal material, the material of the second film layer comprises: a normal state metal material;
wherein the first film layer and/or the second film layer is formed by glancing angle deposition.
2. The method of claim 1, wherein the step of determining the position of the substrate comprises,
when the glancing angle deposition is adopted to prepare the first film layer and/or the second film layer, the included angle between the normal line of the substrate and the normal line of the plane of the adopted target material is 40-89 degrees.
3. The method of claim 1, wherein the step of determining the position of the substrate comprises,
the working air pressure adopted by the glancing angle deposition is 0.1-0.5 Pa, and the power density of sputtering adopted by the deposition is less than or equal to 24W/cm 2 。
4. A method according to any one of claim 1 to 3, wherein,
the glancing angle deposition is performed by means of magnetron sputtering and/or thermal evaporation.
5. A superconducting thin film prepared by the method according to any one of claims 1 to 4.
6. The superconducting thin film according to claim 5, wherein,
the first film layer and/or the second film layer is/are a film with a nano inclined columnar structure.
7. The superconducting thin film according to claim 6, wherein,
the inclination angle of the nano inclined columnar structure is more than 0 degrees and less than or equal to 60 degrees.
8. The superconducting thin film according to claim 5, wherein,
the porosity of the first film layer and/or the second film layer is 10% -50%; and/or the number of the groups of groups,
the surface roughness of the first film layer and/or the second film layer is 1 nm-5 nm.
9. The superconducting thin film according to claim 5, wherein,
the thickness of the first film layer is 20-400 nm, the thickness of the second film layer is 10-400 nm, and the ratio of the thickness of the first film layer to the thickness of the second film layer is 0.5:1-6:1.
10. A superconducting edge transition detector, comprising:
the superconducting thin film according to any one of claims 5 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211736873.XA CN116313283A (en) | 2022-12-31 | 2022-12-31 | Superconducting thin film, preparation method adopting glancing angle deposition and superconducting transition edge detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211736873.XA CN116313283A (en) | 2022-12-31 | 2022-12-31 | Superconducting thin film, preparation method adopting glancing angle deposition and superconducting transition edge detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116313283A true CN116313283A (en) | 2023-06-23 |
Family
ID=86812078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211736873.XA Pending CN116313283A (en) | 2022-12-31 | 2022-12-31 | Superconducting thin film, preparation method adopting glancing angle deposition and superconducting transition edge detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116313283A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6206065B1 (en) * | 1997-07-30 | 2001-03-27 | The Governors Of The University Of Alberta | Glancing angle deposition of thin films |
| CN111640854A (en) * | 2020-05-18 | 2020-09-08 | 中国计量科学研究院 | Method for preparing multilayer superconducting film of superconducting transition edge detector and detector |
| CN113299819A (en) * | 2021-05-21 | 2021-08-24 | 上海科技大学 | Superconducting transition edge detector and preparation method thereof |
| CN113659067A (en) * | 2021-10-14 | 2021-11-16 | 清华大学 | Superconducting transition edge sensor, preparation method and micro energy device |
-
2022
- 2022-12-31 CN CN202211736873.XA patent/CN116313283A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6206065B1 (en) * | 1997-07-30 | 2001-03-27 | The Governors Of The University Of Alberta | Glancing angle deposition of thin films |
| CN111640854A (en) * | 2020-05-18 | 2020-09-08 | 中国计量科学研究院 | Method for preparing multilayer superconducting film of superconducting transition edge detector and detector |
| CN113299819A (en) * | 2021-05-21 | 2021-08-24 | 上海科技大学 | Superconducting transition edge detector and preparation method thereof |
| CN113659067A (en) * | 2021-10-14 | 2021-11-16 | 清华大学 | Superconducting transition edge sensor, preparation method and micro energy device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4619450B2 (en) | Vacuum thin film forming equipment | |
| US9017535B2 (en) | High-frequency sputtering device | |
| Dane et al. | Bias sputtered NbN and superconducting nanowire devices | |
| US11599016B2 (en) | Physical vapor deposition system and processes | |
| US20140224646A1 (en) | Silver selenide film stoichiometry and morphology control in sputter deposition | |
| Ayesh et al. | Fabrication of size-selected bimetallic nanoclusters using magnetron sputtering | |
| JPH0333778B2 (en) | ||
| Motegi et al. | Long‐throw low‐pressure sputtering technology for very large‐scale integrated devices | |
| Mukhtar et al. | Microstructure of ZnO thin films produced by magnetron sputter oblique deposition | |
| Hou et al. | Characterization of Sputtered Nano-Au Layer Deposition on Silicon Wafer | |
| CN113684453A (en) | Film with low secondary electron emission coefficient and preparation method thereof | |
| CN116313283A (en) | Superconducting thin film, preparation method adopting glancing angle deposition and superconducting transition edge detector | |
| CN110318027A (en) | A method of low reflection silver-molybdenum alloy film is prepared on silver strip surface | |
| Ali et al. | Fabrication of Mo/Cu multilayer and bilayer transition edge sensors | |
| JP5190316B2 (en) | High frequency sputtering equipment | |
| Landi et al. | High density flux of Co nanoparticles produced by a simple gas aggregation apparatus | |
| Wang et al. | Self-assembled Co nanorods in diamond-like carbon thin films synthesized by plasma-assisted magnetron sputtering | |
| Li et al. | Fabrication and characterization of non-evaporable porous getter films | |
| JP2011184706A (en) | Film deposition method and thin film material produced by using the film deposition method | |
| Manova et al. | Filtered arc deposition and implantation of aluminium nitride | |
| CN111129279B (en) | Superconducting TES single photon detector integrated with multilayer optical film and preparation method | |
| Wasa et al. | Sputtering in a crossed electromagnetic field | |
| Hiruma et al. | Performance and quality analysis of Mo–Si multilayers formed by ion-beam and magnetron sputtering for extreme ultraviolet lithography | |
| Jang et al. | Crossover of the preferred growth orientation of AlN/Si (001) films during off-axis radio frequency sputter growth | |
| Jing et al. | Dependence of characteristics of LaB6 films on DC magnetron sputtering power |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |