CN116311595A - Vehicle MOS tube supervision method, device, medium and program product - Google Patents
Vehicle MOS tube supervision method, device, medium and program product Download PDFInfo
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- G07C5/00—Registering or indicating the working of vehicles
- G07C5/08—Registering or indicating performance data other than driving, working, idle, or waiting time, with or without registering driving, working, idle or waiting time
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Abstract
The invention discloses a vehicle MOS tube supervision method, equipment, medium and program product, wherein a voltage-stabilizing diode is arranged between a grid electrode and a source electrode of a MOS tube, and the method comprises the following steps: monitoring the current working state of the MOS tube in real time; judging whether the current working state has abnormal conditions or not; when the current working state has abnormal conditions, the working parameters of the MOS tube are adjusted; acquiring a historical working state of the MOS tube; based on the historical working state and the current working state, analyzing the service life and the fault probability of the MOS tube; based on the analysis result, a processing suggestion is generated. The invention can effectively prevent the MOS tube from being ablated on the basis of not affecting the performance of the MOS tube, and realize the effective and reliable protection effect on the MOS tube.
Description
Technical Field
The invention relates to the technical field of joint control of vehicle subsystems, in particular to a vehicle MOS (metal oxide semiconductor) tube supervision method, equipment, medium and program product.
Background
The MOS tube is a common electronic element, is widely applied to the fields of power electronics, communication, computers and the like, and has the advantages of high switching speed, low driving voltage, small conduction loss and the like.
The MOS transistor may be used as a switch to control the current. The current is the flow of electrons, which are negatively charged tiny particles that can move freely in the conductor. A conductor is a material that is capable of passing an electrical current, such as copper, iron, etc. The MOS transistor has three pins, which are called drain, gate and source, respectively. The drain and source are two conductors with an insulating layer between them, which is a material that does not allow current to pass through, such as plastic, rubber, etc. The grid electrode is a control end, and can apply a voltage to the insulating layer, wherein the voltage is the potential energy difference of electrons, and can drive the electrons to move. When a voltage is applied to the gate electrode, an electric field is generated in the insulating layer, which is a field that can generate a force on the charged particles. The electric field can form a conduction channel between the drain electrode and the source electrode, and the conduction channel is a path through which current can pass, so that the MOS tube is opened, and the current can flow from the drain electrode to the source electrode; when no voltage is applied to the gate, no electric field is applied to the insulating layer, and the conduction channel disappears, so that the MOS transistor is closed, and current cannot flow from the drain to the source.
However, MOS transistors also have problems such as ablation. Ablation refers to the phenomenon that the junction temperature of the MOS tube is too high or the MOS tube is broken down to damage due to the reasons of overcurrent, overvoltage, static electricity, miller effect and the like in the working process of the MOS tube, namely, the structure inside the MOS tube is damaged due to the reasons, the MOS tube cannot be normally closed, and current always flows from a drain electrode to a source electrode, so that the MOS tube is overheated or even burnt. Ablation not only can affect the performance and service life of the MOS tube, but also can cause faults and potential safety hazards of a circuit.
In order to prevent ablation of the MOS tube, the prior technical proposal mainly comprises the following steps:
(1) And a resistor or a capacitor is added on the grid electrode of the MOS tube so as to slow down the switching speed of the MOS tube and inhibit oscillation and overcurrent caused by the Miller effect. In the switching process of the MOS tube, due to parasitic capacitance between the grid electrode and the drain electrode, a Miller effect is generated, namely, the grid voltage changes along with the change of the drain electrode voltage, so that the grid current is increased, and the junction temperature of the MOS tube is increased or broken down. To prevent this, a capacitor may be added to the gate to slow the change in gate voltage and reduce the effect of the miller effect.
(2) And a fuse or a current limiting resistor is added on the drain electrode of the MOS tube to limit the current of the drain electrode and prevent the drain electrode from being burnt out due to overcurrent.
(3) And a protection circuit or a feedback circuit is added into the driving circuit of the MOS tube so as to detect and control the working state of the MOS tube and cut off or regulate the driving signal of the MOS tube in time. In the working process of the MOS tube, the MOS tube may be affected by adverse factors such as overcurrent, overvoltage, static electricity and the like, so that the MOS tube is damaged. In order to prevent the situation, a protection circuit or a feedback circuit can be added into the driving circuit, and the real-time monitoring and protection of the MOS tube can be realized through means of sampling, comparison, amplification, logic and the like.
In the process of realizing the technical scheme of the embodiment of the invention, the inventor at least discovers that the following technical problems exist in the prior art:
(1) The resistor or the capacitor can increase the charge and discharge time of the grid electrode, prolong the switching time of the MOS tube, increase the switching loss and heat, and influence the service life of the MOS tube.
(2) The fuse or current limiting resistor increases the voltage drop and loss of the drain, reducing output efficiency and power.
(3) The protection circuit or feedback circuit may increase the complexity and cost of the driving circuit, and may introduce disturbances and malfunctions.
To sum up, although the prior art can prevent the ablation of the MOS tube to a certain extent, the performance of the MOS tube can be affected.
Disclosure of Invention
The embodiment of the invention provides a vehicle MOS tube supervision method, device, medium and program product, which solve the technical problem that the performance of an MOS tube is affected although the ablation of the MOS tube can be prevented to a certain extent in the prior art.
In one aspect, the embodiment of the invention provides a vehicle MOS tube supervision method, a zener diode is arranged between a grid electrode and a source electrode of a MOS tube, and temperature field distribution of the MOS tube is measured through a first temperature sensor array and a single second temperature sensor to obtain a test temperature data set; based on the test temperature data set, performing iterative computation through a cloud intelligent algorithm, and training an MOS tube service life and fault probability analysis algorithm based on a temperature field measured by the second temperature sensor as input, wherein the method comprises the following steps: monitoring the current working state of the MOS tube in real time; judging whether the current working state has abnormal conditions or not; when the current working state has abnormal conditions, the working parameters of the MOS tube are adjusted; acquiring a historical working state of the MOS tube; analyzing the service life and the fault probability of the MOS tube based on the historical working state and the current working state; based on the analysis result, a processing suggestion is generated.
Optionally, the current working state of the real-time monitoring MOS tube specifically includes: monitoring the current source-drain voltage of the MOS tube in real timeV DS Drain currentI DS Junction temperatureT J At least one of them.
Optionally, after the monitoring the working state of the MOS transistor in real time, the method further includes: acquiring a historical working state of the MOS tube; analyzing the service life and the fault probability of the MOS tube based on the historical working state and the current working state; based on the analysis result, a processing suggestion is generated.
Optionally, after the analyzing the life and the fault probability of the MOS transistor, the method further includes: and generating the ablation risk level of the MOS tube based on preset thresholds of different risk levels.
Optionally, after generating the processing suggestion based on the analysis result, the method further includes: and adjusting the working parameters of the MOS tube based on the processing suggestion.
Optionally, the adjusting the working parameters of the MOS transistor specifically includes: and adjusting the current of the MOS tube, adjusting the voltage of the MOS tube or cutting off the power supply of the MOS tube.
The embodiment of the invention also provides computer equipment, which comprises a memory and a processor, wherein the memory stores a computer program, and the processor realizes the steps of the vehicle MOS tube supervision method when executing the computer program.
The embodiment of the invention also provides a computer readable storage medium, on which a computer program is stored, and the computer program realizes the steps of the vehicle MOS tube supervision method when being executed by a processor.
The embodiment of the invention also provides a computer program product, which comprises a computer program, wherein the computer program realizes the steps of the vehicle MOS tube supervision method when being executed by a processor.
One or more technical solutions provided in the embodiments of the present invention at least have the following technical effects or advantages:
a vehicle MOS tube supervision method comprises the steps of arranging a voltage-stabilizing diode between a grid electrode and a source electrode of a MOS tube, measuring the temperature field distribution of the MOS tube through a first temperature sensor array and a single second temperature sensor, and obtaining a test temperature data set; based on the test temperature data set, performing iterative computation through a cloud intelligent algorithm, and training an MOS tube service life and fault probability analysis algorithm based on a temperature field measured by the second temperature sensor as input, wherein the method comprises the following steps: monitoring the current working state of the MOS tube in real time; judging whether the current working state has abnormal conditions or not; when the current working state has abnormal conditions, the working parameters of the MOS tube are adjusted; acquiring a historical working state of the MOS tube; analyzing the service life and the fault probability of the MOS tube based on the historical working state and the current working state; based on the analysis result, a processing suggestion is generated. According to the invention, the vehicle MOS tube is monitored in a mode of combining software and hardware, so that the technical problem that the performance of the MOS tube is affected while the MOS tube is prevented from being ablated to a certain extent only in a hardware mode in the prior art is effectively solved. In terms of hardware, the voltage-stabilizing diode is arranged between the grid electrode and the source electrode of the MOS tube, so that the voltage between the source electrode and the grid electrode can be limited, overvoltage breakdown of the source electrode is prevented, the loss and the failure rate of the MOS tube are reduced, the reverse breakdown voltage of the voltage-stabilizing diode can be selected according to the type and the working condition of the MOS tube so as to adapt to different application occasions, the influence on the normal working of the MOS tube can be reduced by the parallel connection mode of the voltage-stabilizing diode, and the performance and the stability of the MOS tube are improved; in terms of software, the current working state of the MOS tube is monitored in real time, abnormal conditions of the MOS tube can be timely found and timely processed, the abnormal conditions of the MOS tube can be pre-judged in advance, intelligent management and maintenance of the MOS tube are realized, the service efficiency and service life of the MOS tube are improved, and safety accidents caused by damage of the MOS tube are prevented. The invention can effectively prevent the MOS tube from being ablated on the basis of not affecting the performance of the MOS tube, and realize the effective and reliable protection effect on the MOS tube.
Further, the current working state of the real-time monitoring MOS tube is specifically: monitoring the current source-drain voltage of the MOS tube in real timeV DS Drain currentI DS Junction temperatureT J At least one of them. The method can collect multiple types of working states and is used for timely finding abnormal conditions of the MOS tube.
Still further, after the analyzing the life and the failure probability of the MOS transistor, the method further includes: and generating the ablation risk level of the MOS tube based on preset thresholds of different risk levels. The ablation risk of the MOS tube can be classified, so that the ablation risk is finely managed, and corresponding risk elimination treatment is conveniently carried out aiming at ablation problems of different risk grades.
Still further, after generating the processing advice based on the analysis result, further comprising: and adjusting the working parameters of the MOS tube based on the processing suggestion. The working parameters of the MOS tube can be flexibly adjusted according to the service life of the MOS tube and the fault probability analysis result, and the ablation of the MOS tube is effectively prevented.
Furthermore, the adjusting the working parameters of the MOS transistor specifically includes: and adjusting the current of the MOS tube, adjusting the voltage of the MOS tube or cutting off the power supply of the MOS tube. The problem caused by the abnormal condition of the MOS tube can be effectively prevented in various modes, the ablation phenomenon is prevented, the MOS tube is automatically controlled and protected, and the risks of manual intervention and misoperation are reduced.
Drawings
FIG. 1 is a flow chart of a method for monitoring a vehicle MOS transistor according to an embodiment of the invention;
FIG. 2 is a block diagram of a vehicle MOS transistor monitoring system according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a vehicle MOS transistor supervision system using a resistive sensing circuit according to an embodiment of the present invention.
Detailed Description
The embodiment of the invention provides a vehicle MOS tube supervision method, device, medium and program product, which solve the technical problem that the performance of an MOS tube is affected although the ablation of the MOS tube can be prevented to a certain extent in the prior art.
The technical scheme of an embodiment of the invention aims to solve the problems, and the general idea is as follows:
a vehicle MOS tube supervision method comprises the steps of arranging a voltage-stabilizing diode between a grid electrode and a source electrode of a MOS tube, measuring the temperature field distribution of the MOS tube through a first temperature sensor array and a single second temperature sensor, and obtaining a test temperature data set; based on the test temperature data set, through iterative computation of a cloud intelligent algorithm, training an MOS tube life and fault probability analysis algorithm based on a temperature field measured by a second temperature sensor as input, wherein the method comprises the following steps: monitoring the current working state of the MOS tube in real time; judging whether the current working state has abnormal conditions or not; when the current working state has abnormal conditions, the working parameters of the MOS tube are adjusted; acquiring a historical working state of the MOS tube; based on the historical working state and the current working state, analyzing the service life and the fault probability of the MOS tube; based on the analysis result, a processing suggestion is generated. According to the invention, the vehicle MOS tube is monitored in a mode of combining software and hardware, so that the technical problem that the performance of the MOS tube is affected while the MOS tube is prevented from being ablated to a certain extent only in a hardware mode in the prior art is effectively solved. In terms of hardware, the voltage-stabilizing diode is arranged between the grid electrode and the source electrode of the MOS tube, so that the voltage between the source electrode and the grid electrode can be limited, overvoltage breakdown of the source electrode is prevented, the loss and the failure rate of the MOS tube are reduced, the reverse breakdown voltage of the voltage-stabilizing diode can be selected according to the type and the working condition of the MOS tube so as to adapt to different application occasions, the influence on the normal working of the MOS tube can be reduced by the parallel connection mode of the voltage-stabilizing diode, and the performance and the stability of the MOS tube are improved; in terms of software, the current working state of the MOS tube is monitored in real time, abnormal conditions of the MOS tube can be timely found and timely processed, the abnormal conditions of the MOS tube can be pre-judged in advance, intelligent management and maintenance of the MOS tube are realized, the service efficiency and service life of the MOS tube are improved, and safety accidents caused by damage of the MOS tube are prevented. The invention can effectively prevent the MOS tube from being ablated on the basis of not affecting the performance of the MOS tube, and realize the effective and reliable protection effect on the MOS tube.
In order to better understand the above technical solutions, the following detailed description will refer to the accompanying drawings and specific embodiments. It will be apparent that the described embodiments of the invention are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The embodiment provides a vehicle MOS tube supervision method which is applied to a vehicle MOS tube supervision system. The vehicle MOS pipe supervision system comprises: MOS pipe, monitoring module, big data early warning module, controller and zener diode. And a voltage stabilizing diode is arranged between the grid electrode and the source electrode of the MOS tube, the monitoring module and the controller are sequentially connected, and the MOS tube, the big data early warning module and the controller are sequentially connected.
The voltage stabilizing diode is used for preventing overvoltage breakdown of the source grid electrode and protecting the MOS tube. The voltage stabilizing diode is connected with the source electrode and the grid electrode of the MOS tube in parallel, when the voltage of the source electrode and the grid electrode exceeds the reverse breakdown voltage of the voltage stabilizing diode, the voltage stabilizing diode is conducted, and redundant current is led away, so that the voltage of the source electrode and the grid electrode is limited within a safe range.
The monitoring module is used for monitoring the working state of the MOS tube in real time, such as source-drain voltageV DS Drain currentI DS Junction temperatureT J And parameters, and sending the current working state to the controller. The monitoring module comprises a sensor and a data processing unit, wherein the sensor comprises at least one of a voltage sensor, a current sensor and a temperature sensor. The voltage sensor is used for measuring source-drain voltage of the MOS tubeV DS The current sensor is used for measuring drain current of the MOS tubeI DS The temperature sensor is used for measuring junction temperature of the MOS tubeT J . The data processing unit is used for receiving signals of the voltage sensor, the current sensor and the temperature sensor, converting, filtering, amplifying and the like, and then sending the signals to the controller in a wireless communication mode.
The big data early warning module is used for analyzing the service life and the fault probability of the MOS tube according to the historical working state and the current working state, giving ablation risk level and processing advice according to a preset threshold value, and sending the result to the controller. The historical working state used by big data comes from a hardware test bed built in the early stage of development. The test bed consists of a high-precision temperature sensor array and a single common temperature sensor, and is arranged near a key MOS tube to measure temperature field distribution. And a large amount of test data acquired by the high-precision sensor and the single common sensor are transmitted to a cloud intelligent algorithm as a test temperature data set for iterative computation, and an MOS tube service life and fault probability analysis algorithm based on a temperature field measured by the common sensor as input is trained, so that the estimated precision and the stability performance of the MOS tube service life and fault probability analysis algorithm reach the expected targets. In the later-stage product, the high-precision temperature sensor can be removed, and only the common temperature sensor is reserved.
The controller is used for receiving the data of the monitoring module and the result of the big data early warning module, and adjusting the current or the voltage of the MOS tube according to the processing suggestion, or cutting off the power supply of the MOS tube so as to prevent ablation. The controller comprises a data receiving unit, a decision executing unit and a driving output unit. The data receiving unit is used for receiving data and results sent by the monitoring module and the big data early warning module, and performing decoding, verification and other processes. The decision execution unit is used for generating corresponding control signals according to the processing suggestions. The driving output unit is used for converting the control signal into current or voltage suitable for driving the MOS tube and outputting the current or voltage to the MOS tube.
As shown in fig. 2, the MOS transistor 1 is connected to a vehicle battery 2 and a vehicle motor 3 for controlling the operation of the vehicle. The monitoring module 4 is connected with the MOS tube 1 and is used for monitoring the working state of the MOS tube 1 in real time. The big data early warning module 5 is connected with the monitoring module 4 and is used for sending the service life and the fault probability of the MOS tube 1 according to the data sent by the monitoring module. The zener diode 6 is connected with the source electrode of the MOS tube 1 and the grid electrode of the MOS tube 1 and is used for preventing overvoltage breakdown of the source grid electrode. The controller 7 is connected with the monitoring module 4, the big data early warning module 5 and the MOS tube 1, and is used for receiving the data sent by the monitoring module 4 and the result sent by the big data early warning module, and adjusting or cutting off the power supply or the voltage of the MOS tube 1 according to the processing advice.
As shown in FIG. 3, the invention realizes detection and protection of MOS tube ablation in a resistance induction mode. Mainly comprises the following steps.
Step one, a resistor is connected in series between the drain electrode and the source electrode of the MOS tube. A resistor is an element that blocks the passage of current, which causes the current to flow through it to be reduced and a voltage drop to be produced in proportion thereto. This characteristic is used to detect whether the MOS transistor is ablated. When the MOS tube works normally, the voltage between the drain electrode and the source electrode is low, so that the resistance connected in series between the drain electrode and the source electrode is also small or close to zero; when the ablation phenomenon occurs in the MOS tube, the voltage between the drain electrode and the source electrode is increased, so that the resistance connected in series between the drain electrode and the source electrode is increased or reaches a certain threshold value.
And step two, a resistance type induction circuit is arranged and connected with the resistor and used for detecting the resistance value change of the resistor and outputting a control signal according to the change. A resistive sensing circuit is a circuit capable of sensing resistance change, and can be implemented by simple components, such as a comparator, a reference voltage source and an output terminal. A comparator is an element capable of comparing two input voltages, and outputs a high-level or low-level signal according to the difference between the two input voltages. The reference voltage source is an element that provides a stable voltage value and can be used as an input of the comparator. The output terminal is an element capable of outputting a control signal, and can be used for connecting a control circuit. The two ends of the resistor are respectively connected to the other input end of the comparator and the ground wire, and the voltage drop of the resistor can be used as one input signal of the comparator. When the resistance value of the resistor is smaller or is close to zero, the voltage drop of the resistor is smaller or is close to zero, and the output signal of the comparator is at a low level; when the resistance of the resistor increases or reaches a certain threshold, the voltage drop of the resistor also increases or reaches a certain value, and the output signal of the comparator is at a high level. Thus, the output signal of the comparator is used as a control signal to reflect whether the MOS tube is ablated.
And thirdly, setting a control circuit which is connected with the resistance type induction circuit and used for receiving the control signal and generating a driving signal for adjusting or cutting off the MOS tube according to the control signal. The control circuit is a circuit capable of controlling the switching state of the MOS transistor, and can be realized by simple elements, such as a delay, a switch and a driving end. A delay is an element that can delay an output signal, and can be used to avoid false triggering or jitter. The switch is an element capable of controlling signal on-off, and can be used for cutting off or regulating the driving signal of the MOS tube. The driving end is an element which can provide driving signals for the MOS tube, and the driving end can be used for connecting the grid electrode of the MOS tube. The output end of the resistance type sensing circuit is connected to the input end of the delay device, and a control signal can be output after delay; the output end of the delay device is connected to the control end of the switch, so that the state of the switch can be controlled according to the delayed control signal; the input end of the switch is connected to the driving end, and a driving signal can be transmitted to the MOS tube through the switch; the output end of the switch is connected to the grid electrode of the MOS tube, so that the switch state of the MOS tube can be controlled. When the resistance type sensing circuit does not output a control signal, the delay device does not output a signal, the switch is in an on state, the driving signal is normally transmitted to the MOS tube, and the MOS tube normally works; when the resistance type induction circuit outputs a control signal, after delaying for a certain time, the delay device also outputs a signal, the switch is in an off state, the driving signal is cut off or regulated, the MOS tube is closed or provided with a control circuit, the control circuit is connected with the resistance type induction circuit and is used for receiving the control signal, and the driving signal of the MOS tube is regulated or cut off according to the control signal.
According to the invention, the temperature field distribution of the MOS tube is measured through the first temperature sensor array and the single second temperature sensor to obtain a test temperature data set; based on the test temperature data set, through iterative computation of a cloud intelligent algorithm, an MOS tube life and fault probability analysis algorithm based on a temperature field measured by a second temperature sensor as input is trained.
In a specific implementation, for example: the hardware test stand consists of a first temperature sensor array and a single second temperature sensor, and is arranged near the critical MOS tube to measure the temperature field distribution. The first temperature sensor array is a high-precision sensor array, and the second temperature sensor is a common temperature sensor.
High precision temperature sensor arrays and common temperature sensors are common terminology in the art for distinguishing between temperature sensors of different performance and price.
Wherein, the high-precision temperature sensor array refers to a group of temperature sensors with higher measurement precision and resolution. The high-precision temperature sensor is a sensor capable of measuring the temperature field distribution of the MOS tube, such as PT100, within the range of-40-125 ℃ with the resolution of 0.1 ℃ and the precision of +/-0.5 ℃. The sensors are arranged around the critical area of the MOS tube and are arranged at certain intervals to acquire more accurate temperature distribution data. The sensor array may include micro thermocouples, infrared sensors, or other high-precision temperature measurement devices. The sensors are connected to the data acquisition module, and the measured temperature data are transmitted to the cloud intelligent algorithm for processing and analysis.
A single common temperature sensor refers to a sensor that is typically used for conventional temperature measurement, with relatively low measurement accuracy. The common temperature sensor is a sensor capable of measuring the temperature field distribution of the MOS tube within the range of-55-150 ℃ with the resolution of 1 ℃ and the accuracy of +/-2 ℃, and can be a common thermistor (such as NTC thermistor) or a thermocouple. In an embodiment, a single common temperature sensor is arranged at a specific location near the MOS transistor to obtain nearby temperature information.
The temperature field distribution of the MOS tube refers to the distribution of heat generated by the MOS tube during operation in the internal and surrounding spaces. The temperature values in different positions and directions are different, so that a three-dimensional temperature field is formed.
Temperature field distribution of MOS tube and working state parameters (source-drain voltageV DS Drain currentI DS Junction temperatureT J ) Closely related, different operating conditions may result in different heat dissipation and heat flow. Therefore, by measuring the temperature field distribution of the MOS tube, the working state parameters of the MOS tube can be reversely deduced, and the service life and the fault probability of the MOS tube can be estimated according to the working state parameters.
The service life and failure probability of the MOS tube refer to the possibility that the MOS tube fails or performance is reduced in a certain time under a certain working condition. Service life, fault probability and junction temperature of MOS tubeT J There is a great relationship. Generally, junction temperatureT J The higher the lifetime, the shorter the failure probability. Therefore, the service life of the MOS tube can be effectively prolonged and the fault probability of the MOS tube can be reduced by controlling and monitoring the junction temperature of the MOS tube.
The high-precision sensor and the single common sensor measure the temperature field distribution of the MOS tube, and a large amount of collected test data are used as a test temperature data set. And transmitting the data acquired by the hardware test bed and the recorded result to a cloud intelligent algorithm for iterative computation, and training an algorithm for analyzing the service life and the fault probability of the MOS tube based on the temperature field measured by the common sensor as input, wherein the estimated accuracy and the stability of the algorithm reach the expected targets. The algorithm may be a machine-learned or deep-learned model, such as a neural network, support vector machine, decision tree, etc. The algorithm obtains a function or formula capable of estimating the service life and the fault probability of the MOS tube according to the temperature field measured by the common sensor by learning the relation between the data of the high-precision temperature sensor array and the single common temperature sensor and the relation between the temperature field distribution and the service life and the fault probability of the MOS tube. In the later-stage products, the high-precision temperature sensor can be removed due to the consideration of cost and complexity, only the common temperature sensor is reserved, and the accuracy and the stability of the intelligent algorithm are not affected. And embedding an algorithm obtained by iterative computation of the cloud intelligent algorithm into the big data early warning module. When a single common temperature sensor measures a temperature field around the MOS tube, the big data early warning module can utilize an algorithm obtained by iterative computation of a cloud intelligent algorithm, predict the service life and the fault probability of the MOS tube according to the temperature field as input parameters, give ablation risk level and processing suggestion according to a preset threshold, and send the result to the controller.
The cloud intelligent algorithm iterative computation refers to performing iterative computation on a test temperature dataset for a plurality of times by utilizing the massive parallel computing capability provided by the cloud computing platform so as to optimize parameters and models of the MOS tube service life and fault probability analysis algorithm. The method can improve the calculation efficiency and accuracy and reduce the requirement and cost of local calculation resources.
The MOS tube life and fault probability analysis algorithm refers to the working state parameters (source-drain voltage) based on the MOS tubeV DS Drain currentI DS Junction temperatureT J ) And a test temperature data set, wherein the service life and the fault probability of the MOS tube under different working conditions are predicted by adopting Weibull distribution or other suitable statistical models. The method can provide risk assessment and treatment suggestions required by the MOS tube ablation protection system, and improves the reliability and safety of the MOS tube.
In the prior art, only a single common temperature sensor is generally used for measuring junction temperature of the MOS tube, and the service life and the fault probability of the MOS tube are estimated according to an empirical formula or a simplified model, but the influence of temperature field distribution around the MOS tube on the MOS tube is not considered, so that the estimated result is inaccurate or unstable. According to the invention, iterative computation is performed through a cloud intelligent algorithm, and the temperature field distribution is used as an input parameter, so that the accuracy and stability of MOS tube service life and fault probability analysis are improved. In particular, the invention has the following advantages:
according to the invention, a large amount of test data acquired by the high-precision temperature sensor array and a single common temperature sensor can be fully utilized, and an algorithm capable of estimating the service life and the fault probability of the MOS tube according to the temperature field measured by the common sensor is trained through iterative calculation of a cloud intelligent algorithm instead of simply using an empirical formula or a simplified model. Therefore, the invention can more accurately reflect the influence of the temperature field distribution around the MOS tube on the service life and the fault probability of the MOS tube, and improve the reliability of the estimated result.
According to the invention, the high-precision temperature sensor array can be removed from the later-stage product, only a single common temperature sensor is reserved, and an algorithm obtained by iterative computation of the cloud intelligent algorithm is embedded into the big data early warning module. Thus, the present invention can reduce cost and complexity and improve operability and workability.
Referring to fig. 1, a method for supervising a vehicle MOS transistor in an embodiment of the present invention will be described in detail.
Step 101: monitoring the current working state of the MOS tube in real time;
step 102: judging whether the current working state has abnormal conditions or not;
step 103: when the current working state has abnormal conditions, the working parameters of the MOS tube are adjusted;
step 104: acquiring a historical working state of the MOS tube;
step 105: based on the historical working state and the current working state, analyzing the service life and the fault probability of the MOS tube;
step 106: based on the analysis result, a processing suggestion is generated.
When the vehicle starts, step 101 is started: and monitoring the current working state of the MOS tube in real time.
Step 101 is implemented in the following steps: the monitoring module monitors data representing the current working state of the MOS tube in real time.
After obtaining the current operating state of the MOS transistor, step 102 is started to be executed: judging whether the current working state has abnormal conditions or not.
Step 102 is implemented in the following manner: the controller receives the data representing the working state sent by the monitoring module and judges whether the current working state of the MOS tube has abnormal conditions such as overcurrent, overvoltage, overheat and the like.
After determining whether the current working state has an abnormal condition, step 103 is started to be executed: when the current working state has abnormal conditions, the working parameters of the MOS tube are adjusted.
Step 103 is performed in the specific implementation process, for example: when the current working state of the MOS tube is in abnormal conditions such as overcurrent, overvoltage, overheat and the like, the controller adjusts working parameters of the MOS tube.
After adjusting the operating parameters of the MOS transistor, step 104 is started to be executed: and acquiring the historical working state of the MOS tube.
In a specific implementation, for example: the big data early warning module takes the working state collected by a hardware test bench built in the early stage of development as a historical working state, and a large amount of test data collected by a high-precision sensor and a single common sensor are taken as the historical working state.
In the early stage of development, a hardware test stand is built, which consists of a high-precision temperature sensor array and a single common temperature sensor, and is arranged near a critical MOS tube to measure the temperature field distribution. The high-precision temperature sensor array is used for acquiring detailed information of temperature field distribution around the MOS tube, and the single common temperature sensor is used for simulating a temperature sensor used in a later product.
And on the test bed, different working conditions and load tests are carried out on the MOS tube, and meanwhile, data of the high-precision temperature sensor array and a single common temperature sensor are collected.
After acquiring the historical operating state of the MOS transistor, step 105 is started to be executed: based on the historical working state and the current working state, the service life and the fault probability of the MOS tube are analyzed.
In a specific implementation, for example: the big data early warning module analyzes and processes based on the historical working state and the current working state, analyzes the service life and the fault probability of the MOS tube, records the service life and the fault condition of the MOS tube, generates an analysis result, and predicts that the precision and the stability reach the expected targets.
After analyzing the lifetime and failure probability of the MOS transistor, step 106 is started to be executed: based on the analysis result, a processing suggestion is generated.
In a specific implementation, for example: the big data early warning module generates a processing suggestion and sends the processing suggestion to the controller.
In the following, a specific example is given for explanation. The hardware test bed is composed of a high-precision temperature sensor array and a single 10K-type negative temperature coefficient thermistor temperature sensor, can measure the temperature field distribution of the MOS tube within the range of-55-150 ℃ with the resolution of 1 ℃ and the precision of +/-2 ℃, and provides a low-cost product scheme. And the collected large amount of test data is used as a test temperature data set, the test temperature data set is transmitted to a cloud intelligent algorithm for iterative computation, an MOS tube service life and fault probability analysis algorithm based on a temperature field measured by a common sensor as input is trained, the estimated accuracy is more than 95%, and the stability is more than 99%. In the later-stage product, the high-precision temperature sensor can be removed, and only the common temperature sensor is reserved.
The invention can realize real-time monitoring and early warning of the service life and fault probability of the MOS tube, and timely adjust or cut off the power supply of the MOS tube according to the processing suggestion so as to prevent ablation. Therefore, the invention can effectively monitor and protect the MOS tube and improve the safety and performance of the vehicle.
In order to collect multiple types of working states, the method is used for timely finding abnormal conditions of the MOS tube. Step 101 of monitoring the current working state of the MOS transistor in real time, specifically: real-time monitoring current source-drain voltage of MOS tubeV DS Drain currentI DS Junction temperatureT J At least one of them.
In a specific implementation, for example: the monitoring module monitors the current source-drain voltage of the MOS tube in real timeV DS The method comprises the steps of carrying out a first treatment on the surface of the The monitoring module monitors the current drain current of the MOS tube in real timeI DS The method comprises the steps of carrying out a first treatment on the surface of the The monitoring module monitors the current junction temperature of the MOS tube in real timeT J The method comprises the steps of carrying out a first treatment on the surface of the The monitoring module monitors the current source-drain voltage of the MOS tube in real timeV DS And drain currentI DS The method comprises the steps of carrying out a first treatment on the surface of the The monitoring module monitors the current of the current drain of the MOS tube in real timeI DS And junction temperatureT J The method comprises the steps of carrying out a first treatment on the surface of the The monitoring module monitors the current source-drain voltage of the MOS tube in real timeV DS And junction temperatureT J The method comprises the steps of carrying out a first treatment on the surface of the The monitoring module monitors the current source-drain voltage of the MOS tube in real timeV DS Drain currentI DS And junction temperatureT J 。
In order to grade the ablation risk of the MOS tube, the ablation risk is finely managed, and corresponding risk elimination treatment is conveniently carried out aiming at the ablation problems of different risk grades. After analyzing the life and the fault probability of the MOS tube, the method further comprises the following steps: and generating ablation risk levels of the MOS tube based on preset thresholds of different risk levels.
In a specific implementation, for example: the monitoring module monitors the current working state of the MOS tube in real time, the big data early warning module compares the data representing the current working state with preset thresholds of different risk levels, judges the specific ablation risk level of the MOS tube, and generates the ablation risk level. Or the big data early warning module compares the data representing the historical working state with preset thresholds of different risk levels, judges the specific ablation risk level of the MOS tube, and generates the ablation risk level.
In order to flexibly adjust the working parameters of the MOS tube according to the service life and fault probability analysis result of the MOS tube, the ablation of the MOS tube is effectively prevented. After generating the processing advice based on the analysis result, further comprising: based on the processing advice, the operating parameters of the MOS transistor are adjusted.
In a specific implementation, for example: the controller receives the processing advice sent by the big data early warning module, and adjusts the working parameters of the MOS tube according to the processing advice.
In order to effectively prevent the problem caused by the abnormal condition of the MOS tube in various modes, the ablation phenomenon is prevented, the MOS tube is automatically controlled and protected, and the risks of manual intervention and misoperation are reduced. Step 103, adjusting working parameters of the MOS transistor, specifically: and adjusting the current of the MOS tube, adjusting the voltage of the MOS tube or cutting off the power supply of the MOS tube.
In a specific implementation, for example: the method can flexibly select and adjust the current of the MOS tube, adjust the voltage of the MOS tube and cut off the processing mode of the power supply of the MOS tube according to the abnormal condition of the MOS tube. If the MOS tube has an overcurrent abnormal condition, limiting the current of the MOS tube; when the MOS tube has overvoltage abnormal condition, the voltage of the MOS tube is reduced; when the MOS tube has overheat abnormal condition, the power supply of the MOS tube is cut off.
Another embodiment of the present invention provides a computer device, including a memory and a processor, where the memory stores a computer program, and the processor implements steps of a vehicle MOS transistor supervision method when executing the computer program.
Another embodiment of the present invention provides a computer-readable storage medium having stored thereon a computer program which, when executed by a processor, implements the steps of a vehicle MOS transistor supervision method.
Another embodiment of the invention provides a computer program product comprising a computer program which, when executed by a processor, implements the steps of a method for vehicle MOS transistor supervision.
One or more technical solutions provided in the embodiments of the present invention at least have the following technical effects or advantages:
a vehicle MOS tube supervision method comprises the steps of arranging a voltage-stabilizing diode between a grid electrode and a source electrode of a MOS tube, measuring the temperature field distribution of the MOS tube through a first temperature sensor array and a single second temperature sensor, and obtaining a test temperature data set; based on the test temperature data set, through iterative computation of a cloud intelligent algorithm, training an MOS tube life and fault probability analysis algorithm based on a temperature field measured by a second temperature sensor as input, wherein the method comprises the following steps: monitoring the current working state of the MOS tube in real time; judging whether the current working state has abnormal conditions or not; when the current working state has abnormal conditions, the working parameters of the MOS tube are adjusted; acquiring a historical working state of the MOS tube; based on the historical working state and the current working state, analyzing the service life and the fault probability of the MOS tube; based on the analysis result, a processing suggestion is generated. According to the invention, the vehicle MOS tube is monitored in a mode of combining software and hardware, so that the technical problem that the performance of the MOS tube is affected while the MOS tube is prevented from being ablated to a certain extent only in a hardware mode in the prior art is effectively solved. In terms of hardware, the voltage-stabilizing diode is arranged between the grid electrode and the source electrode of the MOS tube, so that the voltage between the source electrode and the grid electrode can be limited, overvoltage breakdown of the source electrode is prevented, the loss and the failure rate of the MOS tube are reduced, the reverse breakdown voltage of the voltage-stabilizing diode can be selected according to the type and the working condition of the MOS tube so as to adapt to different application occasions, the influence on the normal working of the MOS tube can be reduced by the parallel connection mode of the voltage-stabilizing diode, and the performance and the stability of the MOS tube are improved; in terms of software, the current working state of the MOS tube is monitored in real time, abnormal conditions of the MOS tube can be timely found and timely processed, the abnormal conditions of the MOS tube can be pre-judged in advance, intelligent management and maintenance of the MOS tube are realized, the service efficiency and service life of the MOS tube are improved, and safety accidents caused by damage of the MOS tube are prevented. The invention can effectively prevent the MOS tube from being ablated on the basis of not affecting the performance of the MOS tube, and realize the effective and reliable protection effect on the MOS tube.
Further, the current working state of the MOS tube is monitored in real time, specifically: real-time monitoring current source-drain voltage of MOS tubeV DS Drain currentI DS Junction temperatureT J At least one of them. The method can collect multiple types of working states and is used for timely finding abnormal conditions of the MOS tube.
Still further, after analyzing the life and the failure probability of the MOS transistor, further comprising: and generating ablation risk levels of the MOS tube based on preset thresholds of different risk levels. The ablation risk of the MOS tube can be classified, so that the ablation risk is finely managed, and corresponding risk elimination treatment is conveniently carried out aiming at ablation problems of different risk grades.
Still further, after generating the processing advice based on the analysis result, further comprising: based on the processing advice, the operating parameters of the MOS transistor are adjusted. The working parameters of the MOS tube can be flexibly adjusted according to the service life of the MOS tube and the fault probability analysis result, and the ablation of the MOS tube is effectively prevented.
Furthermore, the working parameters of the MOS tube are adjusted, specifically: and adjusting the current of the MOS tube, adjusting the voltage of the MOS tube or cutting off the power supply of the MOS tube. The problem caused by the abnormal condition of the MOS tube can be effectively prevented in various modes, the ablation phenomenon is prevented, the MOS tube is automatically controlled and protected, and the risks of manual intervention and misoperation are reduced.
It will be appreciated by those skilled in the art that embodiments of the present invention may be provided as a method, system, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, magnetic disk storage, optical storage, and the like) having computer-usable program code embodied therein.
The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (8)
1. A vehicle MOS tube supervision method is characterized in that a voltage-stabilizing diode is arranged between a grid electrode and a source electrode of a MOS tube, and temperature field distribution of the MOS tube is measured through a first temperature sensor array and a single second temperature sensor to obtain a test temperature data set; based on the test temperature data set, performing iterative computation through a cloud intelligent algorithm, and training an MOS tube service life and fault probability analysis algorithm based on a temperature field measured by the second temperature sensor as input, wherein the method comprises the following steps:
monitoring the current working state of the MOS tube in real time;
judging whether the current working state has abnormal conditions or not;
when the current working state has abnormal conditions, the working parameters of the MOS tube are adjusted;
acquiring a historical working state of the MOS tube;
analyzing the service life and the fault probability of the MOS tube based on the historical working state and the current working state;
based on the analysis result, a processing suggestion is generated.
2. The method of claim 1, wherein the real-time monitoring of the current operating state of the MOS transistor specifically comprises:
monitoring the current source-drain voltage of the MOS tube in real timeV DS Drain currentI DS Junction temperatureT J At least one of them.
3. The method of claim 1, further comprising, after said analyzing the lifetime and failure probability of the MOS transistor:
and generating the ablation risk level of the MOS tube based on preset thresholds of different risk levels.
4. The method of claim 1, further comprising, after the generating a processing suggestion based on the analysis result:
and adjusting the working parameters of the MOS tube based on the processing suggestion.
5. The method of claim 1, wherein the adjusting the operating parameters of the MOS transistor is specifically:
and adjusting the current of the MOS tube, adjusting the voltage of the MOS tube or cutting off the power supply of the MOS tube.
6. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor implements the steps of the method of any of claims 1-5 when the computer program is executed.
7. A computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1-5.
8. A computer program product comprising a computer program, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1-5.
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