CN116306435A - Equivalent circuit structure of QLED and parameter identification and correction method thereof - Google Patents
Equivalent circuit structure of QLED and parameter identification and correction method thereof Download PDFInfo
- Publication number
- CN116306435A CN116306435A CN202310593548.0A CN202310593548A CN116306435A CN 116306435 A CN116306435 A CN 116306435A CN 202310593548 A CN202310593548 A CN 202310593548A CN 116306435 A CN116306435 A CN 116306435A
- Authority
- CN
- China
- Prior art keywords
- qled
- voltage
- equivalent circuit
- node
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Abstract
The invention discloses an equivalent circuit structure of a QLED and a parameter identification and correction method thereof. The equivalent circuit model includes an anode resistance R anode Cathode resistance R cathode Body capacitance C body Body resistance R body Diode resistor R dio Diode capacitor C dio Ideal diode D iode And an ideal direct current voltage source DC. The invention is based on the theory of trap charge limiting current and space charge limiting current, has simple structure and convenient use, reduces fitting errors of a model to actual data by a parameter identification and correction method, improves model parameter matching precision, can meet the requirement of micro-display circuit simulation design, and has practical engineering application value; the method can reduce parameter errors, improve fitting accuracy, fully utilize all experimental data, and enable the finally obtained model parameters to be more fit with actual physical characteristics of the target device.
Description
Technical Field
The invention relates to the technical field of quantum dot light emitting diodes, in particular to an equivalent circuit structure of a QLED and a parameter identification and correction method thereof.
Background
Quantum dot light emitting diodes (QLEDs) are a new low-dimensional semiconductor material that has received widespread attention for its excellent light emitting properties, including narrow emission bandwidth, wide color gamut and size dependent tunable emission spectrum, which motivated more and more research into quantum dot light emitting diodes. Quantum dot light emitting diodes offer significant advantages over conventional display technologies in both information display and solid state lighting applications. First, the conventional liquid crystal display is a non-self-luminous display, which uses a separate backlight unit, thus being bulky and power-consuming; the quantum dot light emitting diode is a self-luminous photoelectric device, has a simple structure and is beneficial to miniaturization. The traditional light-emitting diode has the problems of difficult colorization, high manufacturing cost and the like; the quantum dot light-emitting diode has wide color gamut, good colorization performance and adjustable light-emitting color, and the manufacturing of the quantum dot material has a certain technical accumulation, so the cost is expected to be further reduced. In addition, although the color performance of the organic light-emitting diode is better and the application is wide, the problem of service life shortening caused by material aging is more easily generated due to the fact that the light-emitting layer is made of organic materials; the quantum dot luminous layer of the quantum dot light emitting diode is made of inorganic materials, so that the working time is longer and the light emission is more uniform. Therefore, quantum dot light emitting diodes are expected to become a mainstream high-performance optoelectronic device in the future.
Similar to conventional light emitting diodes or organic light emitting diodes, the application of quantum dot light emitting diodes is not separated from the development of micro display technology. The micro display technology is a novel display technology, and compared with the traditional flat display technology, the micro display technology has the characteristics of small volume, high resolution, low power consumption and the like, and represents the development direction of future display technologies. The micro display technology combines the load photoelectric devices such as the quantum dot light emitting diode and the like with the integrated circuit, and the principle is that the corresponding load photoelectric devices are controlled to emit light through a driving circuit, a pixel point circuit and the like, so that the physical characteristics of the load photoelectric devices, particularly the influence of voltage-current characteristics on the circuit and the subsequent display quality, are required to be considered in the process of designing the early micro display circuit, the design, simulation and verification process of the micro display circuit are closer to the actual product performance, and the manufacturing efficiency and the finished product yield can be improved.
However, due to the research on quantum dot light emitting diodes, the research is mostly in the fields of materials, devices and the like. In the existing engineering application, especially in the micro display field, when a new quantum dot light emitting diode micro display needs to be designed, due to the lack of an accurate equivalent circuit model of the quantum dot light emitting diode device, a traditional equivalent circuit model of the light emitting diode or an improved equivalent circuit model of the organic light emitting diode is often used to replace the quantum dot light emitting diode device as a load of a designed circuit, which makes subsequent simulation and verification inevitably generate errors with actual conditions. Furthermore, errors cannot be reduced as much as possible due to the lack of a method to correct the parameters of the model, and the use of conventional parameter solving methods may also create problems of no solution or insufficient data utilization. The problems mentioned above together lead to the failure of the micro-display circuit design and simulation results to more fully and accurately simulate the various properties of the actual product, which increases the difficulty in the development of micro-display technologies, especially quantum dot light emitting diode micro-display technologies.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide an equivalent circuit structure of a QLED and a parameter identification and correction method thereof so as to meet the application requirements on a quantum dot light emitting diode device model in the process of designing and simulating an analog circuit of a quantum dot light emitting diode micro-display, reduce errors and improve the accuracy of model establishment and data fitting.
To achieve the above object, in a first aspect, the present invention provides an equivalent circuit structure of a QLED, including:
anode resistance R anode Two ends of the resistor are respectively connected with the anode of an external circuit and the node A to represent the resistance value of the QLED anode material;
cathode resistance R cathode Two ends of the resistor are respectively connected with a cathode of an external circuit and a node B, and are used for representing the resistance value of the QLED cathode material;
bulk capacitance C body The positive electrode end and the negative electrode end of the light-emitting diode are respectively connected with the node A and the node B in sequence and are used for representing the capacitance values of the QLED organic material and the quantum dot light-emitting layer;
bulk resistance R body Two ends of the light emitting diode are respectively connected with the node A and the node B to represent the serial resistance value of the QLED organic material and the quantum dot light emitting layer;
diode resistor R dio Two ends of the capacitor are respectively connected with a node A and a node C to represent the equivalent parasitic series resistance value of the QLED under a space charge current limiting mechanism;
diode capacitor C dio The positive electrode end and the negative electrode end of the capacitor are respectively connected with the node C and the node B in sequence and used for representing the equivalent parasitic capacitance value of the QLED under a space charge limiting current mechanism;
the positive electrode end and the negative electrode end of the ideal Diode are respectively connected with the node C and the positive electrode of the ideal direct current voltage source DC in sequence, and are used for representing the unidirectional conductive characteristic of the QLED and the defect degree caused by factors such as materials;
and the negative electrode of the ideal direct-current voltage source DC is connected with the node B and used for representing the starting voltage of the QLED light.
In a second aspect, the present invention provides a method for identifying and correcting parameters of an equivalent circuit structure of a QLED, including:
step S01, measuring the area S of the target QLED device and the capacitance value C of the unit area of the material 0 And based on the area S and the capacitance value C of the unit area of the material 0 Calculating to obtain the body capacitance C body And diode capacitance C dio Is a numerical value of (2);
step S02, applying external voltages to two ends of the target QLED device, measuring the corresponding values of working currents of the target QLED device under different external voltages to obtain m groups of data sets of voltage-current characteristics, wherein each data set is marked as D i The aggregate of all m data sets is denoted as D m M is a natural number of 6 or more, i=1, 2 … … m;
step S03, slave D m Take out non-duplicate 6 groups D i Taking t times, wherein t is a natural number greater than 0,
and calculate each variable A according to the voltage-current characteristics of the equivalent circuit model k At each data set D i Corresponding j model solutions a under the condition k,j K=1, 2 … … 6,j is a positive integer not more than t;
step S04, solving a according to the model k,j Solving for each variable A k Correction solution a of (2) k,0 ；
Step S05, the correction solution a obtained by all the above steps k,0 Body capacitance C body And diode capacitance C dio And substituting the values of the components into an equivalent circuit model to calculate the parameter values of the components.
Further, the voltage-current characteristics of the equivalent circuit model are specifically as follows:
when the voltage at two ends of the equivalent circuit model is larger than 0 and lower than the starting voltage, the starting voltage of the voltage-current characteristic is as follows:
when the voltage at two ends of the equivalent circuit model is larger than the starting voltage, the voltage-current characteristics are as follows:
wherein V is the voltage at two ends of the equivalent circuit model, I is the current flowing through the equivalent circuit model, n is the diode management ideal factor, I s For diode reverse saturation current, V T For diode temperature equivalent, V DC Is the voltage of an ideal direct current voltage source DC.
Further, the value of t is as follows:
wherein, the liquid crystal display device comprises a liquid crystal display device,！representing the factorial operation symbol.
Further, the correction solution a k,0 The solution of (2) is as follows:
the beneficial effects are that: firstly, compared with other similar light-emitting diode models, the QLED equivalent circuit model disclosed by the invention has the advantages of simpler structure and convenient structure, can be efficiently and quickly applied to the simulation design of a micro-display circuit, and improves the scientific research and production efficiency in the micro-display field;
secondly, the QLED equivalent circuit model disclosed by the invention is based on the luminous principle of a quantum dot light emitting diode, respects physical facts, and has practical significance compared with a fitting type equivalent circuit model and an equation type equivalent circuit model: on one hand, the actual device is used for providing model design, on the other hand, the model parameters can reflect the physical properties of the target device in a reverse way, and can be used for accurately evaluating the dynamic and static electrical properties of the target device and promoting the design optimization of the guiding device;
thirdly, because the quantum dot light emitting diode technology is newer, the existing engineering application is lack of related circuit models, and the direct replacement of other diode models often leads to larger deviation between related circuit design results and actual product performances; or because the physical property of the quantum dot light emitting diode device is complex, the modeling process is difficult; the invention designs a parameter identification and correction method for the provided QLED equivalent circuit model, and the error possibly occurring in the experimental test and model fitting processes is further reduced by carrying out preliminary parameter identification and error correction compensation on the obtained model; the method not only solves the problem that the traditional equation set simultaneous method may not have solutions when the data volume is large, but also can reduce parameter errors, improve fitting accuracy, fully utilize all experimental data, enable the finally obtained model parameters to be more attached to the actual physical characteristics of the target device, and improve the accuracy of the proposed QLED equivalent circuit model.
Drawings
Fig. 1 is a schematic diagram of an equivalent circuit structure of a QLED according to an embodiment of the present invention;
fig. 2 is a flowchart of an identification and correction method of an equivalent circuit structure of a QLED according to an embodiment of the present invention.
Detailed Description
The invention will be further illustrated by the following drawings and specific examples, which are carried out on the basis of the technical solutions of the invention, it being understood that these examples are only intended to illustrate the invention and are not intended to limit the scope of the invention.
As shown in fig. 1, an embodiment of the present invention provides an equivalent circuit structure of a QLED, including: anode resistance R anode、 Cathode resistance R cathode、 Bulk capacitance C body Body resistance R body Diode resistor R dio Diode capacitor C dio An ideal Diode and an ideal direct voltage source DC. Node A, B, C is a wire connection point. Wherein the anode resistance R anode The two ends of the anode material are respectively connected with the anode of an external circuit and the node A to represent the resistance value of the QLED anode material. Cathode resistance R cathode And the two ends of the resistor are respectively connected with the cathode of an external circuit and the node B to represent the resistance value of the QLED cathode material. Bulk capacitance C body The positive electrode end and the negative electrode end of the quantum dot luminescent layer are respectively connected with the node A and the node B in sequence and used for representing the capacitance values of the QLED organic material and the quantum dot luminescent layer. Bulk resistance R body And two ends of the quantum dot luminescent layer are respectively connected with the node A and the node B to represent the series resistance value of the QLED organic material and the quantum dot luminescent layer. Diode resistor R dio The two ends of the capacitor are respectively connected with the node A and the node C to represent the equivalent parasitic series resistance value of the QLED under the space charge limited current mechanism. Diode capacitor C dio The positive electrode terminal and the negative electrode terminal of the capacitor are respectively connected with the node C and the node B in sequence and used for representing the equivalent parasitic capacitance value of the QLED under a space charge limited current mechanism. The positive electrode terminal and the negative electrode terminal of the ideal Diode are respectively connected with the node C and the positive electrode of the ideal direct current voltage source DC in sequence, and are used for representing the unidirectional conductive characteristic of the QLED and the defect degree caused by factors such as materials. The negative pole of ideal direct current voltage source DC is connected with node B for the turn-on voltage of characterization QLED luminescence, or threshold voltage.
Referring to fig. 1 and fig. 2, based on the above embodiments, a person skilled in the art can easily understand that the present invention further provides a method for identifying and correcting parameters of an equivalent circuit structure of a QLED, including:
step S01, measuring the area S of the target QLED device and the capacitance value C of the unit area of the material 0 And based on the area S and the capacitance value C per unit area of the material 0 Calculating to obtain the body capacitance C body And diode capacitance C dio Is a numerical value of (2).
Step S02, applying external voltages to two ends of the target QLED device, measuring the corresponding values of working currents of the target QLED device under different external voltages to obtain m groups of data sets of voltage-current characteristics, wherein each data set is marked as D i The aggregate of all m data sets is denoted as D m M is a natural number of 6 or more, i=1, 2 … … m.
Step S03, slave D m Take out non-duplicate 6 groups D i Taking t times, wherein t is a natural number greater than 0, and the value of t is preferably:
！representing the factorial operation symbol and obtaining each variable A according to the voltage-current characteristic of the equivalent circuit model k At each data set D i Corresponding j model solutions a under the condition k,j K=1 and 2 … … 6,j are positive integers equal to or less than t.
Step S04, solving a according to the model k,j Solving for each variable A k Correction solution a of (2) k,0 . Specifically, the above-mentioned correction solution a k,0 The solution of (2) is preferably as follows:
step S05, obtaining a by all the above k,0 Body capacitance C body And diode capacitance C dio The values of the components are substituted into the equivalent circuit model, and the parameter values of the components are calculated, so that the model parameter identification and correction are completed.
Quantum dot light emitting diodes need to emit light under externally supplied excitation, and a large feature of quantum dot light emitting diodes is their lower turn-on voltage, also known as threshold voltage, as distinguished from other optoelectronic devices. When the external excitation voltage is greater than 0 and lower than the threshold voltage of the light emission of the quantum dot light emitting diode, the quantum dot light emitting diode does not emit light; but there is carrier generation and recombination, in which the carrier concentration is low, and the main function is to fill traps inside the organic material of the qd led, where the current is extremely small. When the external excitation voltage is larger than the threshold voltage of the light-emitting diode of the quantum dot, the light-emitting diode of the quantum dot emits light, at the moment, the internal current is rapidly increased because the internal trap is basically filled, and the device emits light, and the physical property of the device is more similar to that of a traditional diode.
Considering the practical semiconductor physics theory and the light emitting mechanism of the quantum dot light emitting diode, according to the relation between the voltage at two ends of the circuit and the voltage value of an ideal direct current voltage source, namely the threshold voltage of the quantum dot light emitting diode, the equivalent circuit model of the quantum dot light emitting diode provided by the invention can be divided into two different working states, the different working states correspond to different circuit elements to work, and the voltage-current characteristics of the corresponding equivalent circuit model are as follows:
when the voltage at two ends of the equivalent circuit model is larger than 0 and lower than the voltage value (starting voltage) of an ideal direct-current voltage source DC, the electric current is smaller and the quantum dot light-emitting diode does not emit light, wherein the electric current is a carrier transfer mechanism for limiting the current corresponding to trap charges, and the electric current is a low-voltage working area of the device. Corresponding to the equivalent circuit model provided by the invention, the anode resistor R anode、 Cathode resistance R cathode Keep working, between nodes A and B, ideal Diode is not conducted due to reverse bias, diode capacitor C dio Sum volume capacitance C body The branch is electrically open, so that current flows through the anode resistor R anode Body resistance R body And cathode resistance R cathode I.e. with voltage-current characteristics defined by anode resistance R anode Body resistance R body Body capacitance C body And cathode resistance R cathode The characteristic is that the electric quantum dot light emitting diode presents a large resistance, the current is extremely small, a carrier transfer mechanism of trap charge limiting current is met, and the voltage-current characteristic of the equivalent circuit model can be expressed as:
when the electricity at two ends of the equivalent circuit modelWhen the voltage is larger than the voltage value (starting voltage) of an ideal direct-current voltage source DC, the quantum dot light-emitting diode emits light for a high-voltage working area of the device corresponding to a carrier transfer mechanism of space charge limiting current. Corresponding to the equivalent circuit model provided by the invention, the ideal Diode is conducted, and the Diode capacitor C dio Sum volume capacitance C body The branch is electrically open circuit due to the bulk resistance R body The resistance is large, and according to the circuit parallel connection principle, the current flows through the anode resistor R anode Diode resistor R dio Ideal Diode, ideal direct current voltage source DC and cathode resistance R cathode I.e. with voltage-current characteristics defined by anode resistance R anode Diode resistor R dio Ideal Diode, ideal DC voltage source DC, diode capacitor C dio And cathode resistance R cathode The method is characterized in that the electrically quantum dot light emitting diode is similar to a typical diode, the current is large, the device emits light, a carrier transfer mechanism of space charge limiting current is met, and the voltage-current characteristic of an equivalent circuit model can be expressed as:
wherein V is the voltage at two ends of the equivalent circuit model, I is the current flowing through the equivalent circuit model, n is the diode management ideal factor, I s For diode reverse saturation current, V T The equivalent weight of the diode temperature is related to the experimental temperature and can be regarded as constant under fixed experimental conditions, V DC Is the voltage of an ideal direct current voltage source DC, namely the starting voltage. For the two voltage-current characteristics above the equivalent circuit model, m is at least 6, six parameters (anode resistance R anode Cathode resistance R cathode Body resistance R body Diode ideality factor n, diode reverse saturation current I s And the voltage V of an ideal direct voltage source DC DC ) There is a solution. Wherein the diode resistance R dio The resistance of the capacitor is not required to be calculated, and the magnitude of the resistance can be calculated by the reverse saturation current I of the diode s And (3) reacting. The value of m can be more than 6, because the larger the data volume is, the traditional equation set simultaneous method can not have solutions, but the parameter identification and correction method provided by the invention can ensure solutions, reduce parameter errors and improve fitting accuracy. In addition, it should be noted that, the portion of the different applied voltages needs to be higher than the starting voltage, and the other portion needs to be smaller than the starting voltage, so that each parameter can be solved, the starting voltage is unknown before solving, and is generally between 2V and 3V according to experience, and when the applied voltages are applied, the reference can be used, for example, the starting voltage is uniformly selected between 2V and 4V.
Through verification, the simulation curve result of the equivalent model and experimental data of the measured voltage-current characteristics of the quantum dot light emitting diode can be well fitted, and under the HSPICE simulation environment, the error in the full voltage domain is kept within 1 LSB, so that the quantum dot light emitting diode equivalent circuit model provided by the invention has the function of accurately and rapidly representing the electrical characteristics of the quantum dot light emitting diode, can be directly applied to micro display circuit design, and can obviously improve the accuracy and efficiency of related design.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that other parts not specifically described are within the prior art or common general knowledge to a person of ordinary skill in the art. Modifications and alterations may be made without departing from the principles of this invention, and such modifications and alterations should also be considered as being within the scope of the invention.
Claims (5)
1. An equivalent circuit structure of a QLED, comprising:
anode resistance R anode Two ends of the resistor are respectively connected with the anode of an external circuit and the node A to represent the resistance value of the QLED anode material;
cathode resistance R cathode Two ends of the resistor are respectively connected with a cathode of an external circuit and a node B, and are used for representing the resistance value of the QLED cathode material;
bulk capacitance C body The positive terminal and the negative terminal of the high-voltage power supply are respectively connected with the node A and the node B in turnThe node B is connected and used for representing the capacitance value of the QLED organic material and the quantum dot luminescent layer;
bulk resistance R body Two ends of the light emitting diode are respectively connected with the node A and the node B to represent the serial resistance value of the QLED organic material and the quantum dot light emitting layer;
diode resistor R dio Two ends of the capacitor are respectively connected with a node A and a node C to represent the equivalent parasitic series resistance value of the QLED under a space charge current limiting mechanism;
diode capacitor C dio The positive electrode end and the negative electrode end of the capacitor are respectively connected with the node C and the node B in sequence and used for representing the equivalent parasitic capacitance value of the QLED under a space charge limiting current mechanism;
the positive electrode terminal and the negative electrode terminal of the ideal Diode are respectively connected with the node C and the positive electrode of the ideal direct current voltage source DC in sequence, and are used for representing the unidirectional conductive characteristic of the QLED and the defect degree caused by material factors;
and the negative electrode of the ideal direct-current voltage source DC is connected with the node B and used for representing the starting voltage of the QLED light.
2. The method for identifying and correcting parameters of the equivalent circuit structure of the QLED according to claim 1, comprising:
step S01, measuring the area S of the target QLED device and the capacitance value C of the unit area of the material 0 And based on the area S and the capacitance value C of the unit area of the material 0 Calculating to obtain the body capacitance C body And diode capacitance C dio Is a numerical value of (2);
step S02, applying external voltages to two ends of the target QLED device, measuring the corresponding values of working currents of the target QLED device under different external voltages to obtain m groups of data sets of voltage-current characteristics, wherein each data set is marked as D i The aggregate of all m data sets is denoted as D m M is a natural number of 6 or more, i=1, 2 … … m;
step S03, slave D m Take out non-duplicate 6 groups D i Taking t times, wherein t is a natural number greater than 0,
and according to the voltage-current characteristics of the equivalent circuit modelSex determination of variables A k At each data set D i Corresponding j model solutions a under the condition k,j K=1, 2 … … 6,j is a positive integer not more than t;
step S04, solving a according to the model k,j Solving for each variable A k Correction solution a of (2) k,0 ；
Step S05, the correction solution a obtained by all the above steps k,0 Body capacitance C body And diode capacitance C dio And substituting the values of the components into an equivalent circuit model to calculate the parameter values of the components.
3. The method for identifying and correcting parameters of an equivalent circuit structure of a QLED according to claim 2, wherein the voltage-current characteristics of the equivalent circuit model are as follows:
when the voltage at two ends of the equivalent circuit model is larger than 0 and lower than the starting voltage, the voltage-current characteristics are as follows:
when the voltage at two ends of the equivalent circuit model is larger than the starting voltage, the voltage-current characteristics are as follows:
wherein V is the voltage at two ends of the equivalent circuit model, I is the current flowing through the equivalent circuit model, n is the diode management ideal factor, I s For diode reverse saturation current, V T For diode temperature equivalent, V DC Is the voltage of an ideal direct current voltage source DC.
4. The method for identifying and correcting parameters of an equivalent circuit structure of a QLED according to claim 2, wherein the value of t is:
wherein, the liquid crystal display device comprises a liquid crystal display device,！representing the factorial operation symbol.
5. The method for identifying and correcting parameters of equivalent circuit structure of QLED according to claim 2, wherein the correction solution a k,0 The solution of (2) is as follows:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310593548.0A CN116306435B (en) | 2023-05-25 | 2023-05-25 | Equivalent circuit structure of QLED and parameter identification and correction method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310593548.0A CN116306435B (en) | 2023-05-25 | 2023-05-25 | Equivalent circuit structure of QLED and parameter identification and correction method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116306435A true CN116306435A (en) | 2023-06-23 |
| CN116306435B CN116306435B (en) | 2023-07-21 |
Family
ID=86783679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310593548.0A Active CN116306435B (en) | 2023-05-25 | 2023-05-25 | Equivalent circuit structure of QLED and parameter identification and correction method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116306435B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116757130A (en) * | 2023-08-18 | 2023-09-15 | 南昌大学 | Equivalent circuit model of LED array and parameter extraction method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014010037A (en) * | 2012-06-29 | 2014-01-20 | Hioki Ee Corp | Equivalent circuit analyzer and equivalent circuit analysis method |
| CN115329246A (en) * | 2022-07-26 | 2022-11-11 | 同济大学 | Super-capacitor equivalent circuit parameter identification method suitable for sparse data |
| CN115424570A (en) * | 2022-08-31 | 2022-12-02 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof, display substrate and display device |
-
2023
- 2023-05-25 CN CN202310593548.0A patent/CN116306435B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014010037A (en) * | 2012-06-29 | 2014-01-20 | Hioki Ee Corp | Equivalent circuit analyzer and equivalent circuit analysis method |
| CN115329246A (en) * | 2022-07-26 | 2022-11-11 | 同济大学 | Super-capacitor equivalent circuit parameter identification method suitable for sparse data |
| CN115424570A (en) * | 2022-08-31 | 2022-12-02 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof, display substrate and display device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116757130A (en) * | 2023-08-18 | 2023-09-15 | 南昌大学 | Equivalent circuit model of LED array and parameter extraction method thereof |
| CN116757130B (en) * | 2023-08-18 | 2023-11-21 | 南昌大学 | Equivalent circuit model of LED array and parameter extraction method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116306435B (en) | 2023-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN116306435B (en) | Equivalent circuit structure of QLED and parameter identification and correction method thereof | |
| CN106531075B (en) | Organic light emissive pixels driving circuit, driving method and organic light emitting display panel | |
| CN104424893B (en) | Organic light emitting display device | |
| CN103996379B (en) | The pixel-driving circuit of Organic Light Emitting Diode and image element driving method | |
| CN105575320B (en) | Image element circuit and its driving method and OLED | |
| US8125420B2 (en) | Organic light-emitting display device and method of driving the same | |
| CN207352944U (en) | A kind of image element circuit and display device | |
| CN207503616U (en) | A kind of pixel circuit and display device | |
| US20160125803A1 (en) | Oled ac driving circuit, driving method and display device | |
| CN1156813C (en) | Organic electroluminescent display device | |
| TW200415559A (en) | Active matrix drive circuit | |
| CN102971779B (en) | Display device | |
| CN1612192A (en) | Image display device | |
| CN105845083A (en) | System and method for compensation of non-uniformities in light emitting device displays | |
| CN110148376A (en) | A kind of pixel circuit and its driving method, display panel, display device | |
| US20210407380A1 (en) | Pixel driving circuit and driving method thereof, and display panel | |
| CN104835453A (en) | Pixel circuit, drive method and display device | |
| CN108492765A (en) | Pixel compensation circuit and pixel-driving circuit compensation method, display device | |
| CN108320710A (en) | Pixel circuit | |
| CN103995223A (en) | Method and apparatus for measuring thermal characteristic of LED | |
| Yoo et al. | Standardizing performance measurement of dye-sensitized solar cells for indoor light harvesting | |
| Bender et al. | Modeling and characterization of organic light-emitting diodes including capacitance effect | |
| US20230253919A1 (en) | Method for identifying parameters of single-diode photovoltaic cells | |
| CN107195273A (en) | A kind of OLED display device and the method for improving display device display performance | |
| Jiang et al. | 35‐3: Invited Paper: An Electro‐optical OLED Model for Prediction and Compensation of AMOLED Aging Artifacts |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |