CN116298750A - Nondestructive characterization method for damage of semiconductor device micro-area structure - Google Patents

Nondestructive characterization method for damage of semiconductor device micro-area structure Download PDF

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CN116298750A
CN116298750A CN202310163377.8A CN202310163377A CN116298750A CN 116298750 A CN116298750 A CN 116298750A CN 202310163377 A CN202310163377 A CN 202310163377A CN 116298750 A CN116298750 A CN 116298750A
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张亚民
温茜
孟宪伟
冯士维
彭飞
杨洁
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Beijing University of Technology
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Abstract

The invention discloses a nondestructive characterization method for damage of a micro-region structure of a semiconductor device, which is characterized in that a certain electrical bias condition is applied to the device to be tested, transient curves of leakage current changing along with time before and after the stress action of the device to be tested are respectively collected by a testing instrument, the time constant of the damage position of the device is extracted from the transient curves by using a Bayesian iterative time constant extraction method, the time constant of the damage position of the device is presented in a peak spectrum form by combining a peak spectrum time constant extraction technology, and the spectrum valued characterization is carried out by using an amplitude spectrum technology on the basis, so that the evolution process of the damage of the invisible micro-region structure in the device under the stress action is converted into visual spectral line movement, and the accurate positioning, damage degree and spectral valued quantitative characterization of the evolution process of the damage of the micro-region structure of the device are realized.

Description

Nondestructive characterization method for damage of semiconductor device micro-area structure
Technical Field
The invention relates to the field of semiconductor device test characterization, which is mainly applied to nondestructive characterization of damage of a semiconductor device micro-area structure.
Background
The wide band gap semiconductor device has excellent characteristics of high breakdown voltage, high output power, high reliability and the like, and shows excellent performance in the high-frequency high-power field. However, under the effects of a device heterostructure and material growth conditions, a device is extremely easy to induce traps in an active region of the device under the actions of high temperature, dynamic strong field and electric stress, and the existence of trap problems limits further improvement and wide application of the performance of the device, so that understanding of the damage position, damage degree and damage evolution process and law of a device micro-region structure is a precondition for effectively analyzing the damage mechanism of the micro-region structure and carrying out reliable design of the device, and development of nondestructive characterization technology research on the damage of the semiconductor device micro-region structure is needed to realize nondestructive measurement, accurate positioning and quantitative characterization of the evolution process of the damage of the semiconductor device micro-region structure.
Disclosure of Invention
The invention aims to provide a nondestructive characterization method for the micro-region structural damage of a semiconductor device based on the relation between the transient current change of a drain electrode and the micro-region structural damage of the semiconductor device.
The defect trapping and electron releasing processes caused by damage to the semiconductor device directly affect the current variation thereof. There is a mapping relationship between the current transient variation between the drain-source electrodes and the device micro-area damage. Based on the mapping relation, the drain current transient change curve before and after the damage of the device is acquired, the current transient curve time constant is extracted by using a Bayesian iterative deconvolution time constant extraction method, and the contribution of the damage at different positions to the drain current change is acquired by integrating a time constant spectrum on the basis and is shown in a spectral line form. By analyzing the transient curves of the drain electrodes before and after the damage, the evolution process of the invisible micro-region structural damage in the device is converted into visual spectral line movement, and the accurate positioning of the damage of the micro-region structural damage of the device, the damage degree and the spectral value quantitative characterization of the evolution process are realized.
The technical scheme adopted by the invention is a nondestructive characterization method for damage of a semiconductor device micro-area structure, and the damage degree of a device by stress action can be compared with the damage degree of the device before damage, so that the change condition of the damage degree and the damage position of the device can be accurately characterized.
S1, a transient current testing system is built, and as shown in FIG. 2, transient change curves of leakage current of the device before and after stress (high temperature, high voltage and the like) acts are collected. The accuracy of the current test system can reach millisecond level, a trap filling stage is required to be applied to the damaged part of the device before the measurement process in the transient current response measurement, a larger electric stress is applied in the filling stage, so that the damaged part of the device, namely the trap, is fully filled, then the device is rapidly switched to a small measurement bias (measurement stage), the process of releasing electrons from the trap is monitored, and the leakage current I can be collected DS Change over time. Selecting a tested device, placing the tested device on a constant temperature platform with the temperature of T0, and applying the electrical bias conditions in the description to the device to acquire leakage current I DS Change over time.
S2, after the transient drain current response is acquired, in order to extract core information of a device damage position (trap), a transient drain current response curve is further processed to obtain a time constant spectrum of the trap, and a time constant extraction method based on Bayesian deconvolution can accurately distinguish very indistinct areas such as areas with relatively gentle curve amplitude change, namely areas with peaks which are annihilated and difficult to identify by the peaks of strong signals, or highly overlapped peak areas and the like through repeated iterative computation, and can effectively highlight the time constant peaks of the device damage position (trap).
Trap information exists in transient current response in an e-exponential variation form as shown in a formula (1)
Figure BDA0004094979000000031
τ i Time constant, ΔI, for the ith trap i For which the amplitude of the current change is affected. The time constant spectrum is mainly used for extracting characteristic time constant tau of trap i And the time constant of the trap is the abscissa of the peak value.
First, a logarithmic time variable is introduced:
z＝lnt (2)
then, the time constant spectrum of the trap is as follows:
Figure BDA0004094979000000032
delta I (z) is the time constant spectrum, then transient current I ds (t) is described as:
Figure BDA0004094979000000033
in comparison to equation (1), equation (4) is an integrated version of the channel transient current. In combination with equation (2), the transient current is converted into:
Figure BDA0004094979000000034
this is a convolution type integral equation for Δi (τ). The result of differentiating z on both sides of formula (3.5) is:
Figure BDA0004094979000000035
the definition function W (z) is as follows:
W(z)＝exp(z-exp(z)) (7)
then
Figure BDA0004094979000000036
The expression of (2) is:
Figure BDA0004094979000000037
Figure BDA0004094979000000038
as a convolution operator, the time constant spectrum Δi (z) is:
Figure BDA0004094979000000041
the time constant spectrum can be obtained by Bayes deconvolution. The time constants of all the device damage positions (traps) are presented in the form of peak spectrum, the area enclosed by the peak spectrum envelope corresponds to the variation of the drain-source current, the time constant spectrum peak corresponds to the time constant of the device damage positions (traps), and the ordinate is the relative variation of the drain-source current caused by the device damage positions (traps).
S3, accumulating the y values of the time constant spectrum according to the total variation of the peak value and the drain current to ensure that the y value corresponding to each time point is equal to the accumulated value of the y values of all the previous time points (including the time point), namely
Figure BDA0004094979000000042
And exchanging the x-axis value with the y-axis value to obtain an integral amplitude spectrum.
S4, first-order derivative of the integral amplitude spectrum is obtained to obtain a differential amplitude spectrum. The difference between peaks in the differential amplitude spectrum is the absolute action intensity of the trap, i.e. the sum of all action intensities is equal to the change of the total transient current response. The damage position and damage degree of the micro-area structure of the device can be more intuitively and accurately represented. Furthermore, the ordinate of the peak of the differential amplitude spectrum represents the "independence" of this type of trap, i.e. how far or near the time constant of this type of trap is from the other traps.
The overall characterization process is as shown in fig. 1, and includes: transient drain current collection and correction, time constant extraction, peak spectrum characterization and amplitude spectrum characterization.
Drawings
FIG. 1 is a schematic diagram of a process for characterizing damage to a micro-area structure of a device.
Fig. 2 device transient current test system.
Fig. 3 illustrates a transient leakage current measurement system hardware architecture and an electrical bias timing diagram.
FIG. 4 is a schematic diagram of a spectral value characterization method of damage to a device micro-region structure caused by stress.
Detailed Description
The present invention will be described in detail below with reference to the drawings and examples.
Taking GaN HEMT as an example, the device is placed on a constant temperature platform with the temperature of T0, and the change curve of leakage current IDS along with time is collected. Characterization of leakage current transient response during electron release (detrapping) at device damage location (trap): in the filling stage, a direct-current voltage is connected to the drain electrode, the voltage is V0, the source electrode is grounded, the grid electrode is connected to a reverse bias voltage V1, and the filling time is T1; in the measurement stage, a small excitation signal is immediately applied to the filled tested device, namely the grid voltage is 0V, and the source electrode is connected with a small voltage V2, so that electrons captured in the device filling stage can be fully released, and the test time is T2. Since the GaN HEMT used in the example is a depletion mode device, if both the gate and the drain are in a forward bias state, the device is extremely vulnerable when the leakage current exceeds the maximum allowed channel current. Thus, two separate timing pulses are required to control the operation states of the gate and drain electrodes, respectively. The hardware architecture and the electrical bias timing diagram of the GaN HEMT transient leakage current measurement system are shown in FIG. 3. After a certain stress (such as electric stress, high-temperature stress and the like) is applied to the device, the device after the stress is placed on a constant-temperature platform with the temperature of T0, the same electric bias condition as that before the stress is applied, the transient curve of the leakage current of the device along with the time is tested again, and the transient curve of the leakage current along with the time before and after the stress is applied is shown in fig. 4 (a).
After transient drain current responses before and after the damage of the tested device are collected, the transient drain current response curve is further processed to obtain a time constant spectrum, and a time constant and a relative peak value of the trap position of the device are extracted from the time constant spectrum by a time constant extraction method based on Bayesian deconvolution and are presented in the form of a peak value spectrum. The area enclosed by the peak spectrum envelope corresponds to the variation of the drain-source current, as shown in fig. 4 (b), there are 3 time constant peak spectrums, namely DP1, DP2 and DP3, according to the total variation of the peak and drain currents, we can estimate and compare the position and damage degree of the device DP1 before and after the device stress is applied, that is, before and after the damage, the damage degree is obviously increased when the peak position of DP2 is moved from about 6s to about 3s, and the peak position of DP3 is moved from about 360s to about 240 s.
Because the quantitative characterization of the damage degree of the device cannot be visually and quantitatively observed through the peak spectrum characterization, the spectrum valued characterization of the damage of the device can be realized by utilizing the amplitude spectrum technology on the basis, a time constant spectrum is extracted by adopting an extraction method based on Bayesian deconvolution, y values of the time constant spectrum are accumulated, and the y value corresponding to each time point is equal to the accumulated value of the y values of all the previous time points (including the time point), namely
Figure BDA0004094979000000061
And then the x-axis value and the y-axis value are exchanged to obtain an integral amplitude spectrum, so that the change amount of the electric leakage at the damaged position of the device 3 before and after the stress action can be intuitively and quantitatively analyzed, as shown in fig. 4 (c).
And first-order derivative of the integral amplitude spectrum is obtained to obtain a differential amplitude spectrum. The method can more accurately and intuitively represent the drain current variation caused by device damage at the position 3 before and after stress damage and the evolution process of the damage degree and the damage position of the device, as shown in fig. 4 (d).
According to the invention, the transient drain current response curve is further processed by collecting the change of the drain current in real time, the accurate acquisition of the trap time constant spectrum is realized by a Bayesian deconvolution-based time constant extraction method, and the spectrum valued characterization of the device micro-area damage is realized by using an amplitude spectrum technology on the basis. Based on the characterization process, different stress types such as high temperature, strong field and the like are applied to the device, peak spectrum and amplitude spectrum are extracted before stress is applied (before damage) and after stress is applied for a period of time (after damage), the evolution process of invisible micro-region structural damage in the device can be converted into visual qualitative visual spectral line movement, and the influences of the stress types, the application intensity, the duration and the like on the damage position and the damage degree of the micro-region structure of the device are obtained through comparing and analyzing the movement of the peak spectral line and the amplitude spectrum before and after stress application, as shown in fig. 4.

Claims (3)

1. The method is characterized in that the method is based on a Bayesian iterative deconvolution time constant extraction technology, analyzes time constants and peak spectrum changes, and realizes nondestructive characterization, accurate positioning and quantitative characterization of evolution process of the micro-area structural damage of the semiconductor device;
mapping relation exists between current transient change between drain and source electrodes and damage of a micro-area of the device; based on the mapping relation, the drain current transient change curve before and after the damage of the device is acquired, the current transient curve time constant is extracted by using a Bayesian iterative deconvolution time constant extraction method, and the contribution of the damage at different positions to the drain current change is acquired by integrating a time constant spectrum on the basis, and is shown in a spectral line form; by analyzing the transient curves of the drain electrodes before and after the damage, the evolution process of the invisible micro-region structural damage in the device is converted into visual spectral line movement, and the accurate positioning of the damage of the micro-region structural damage of the device, the damage degree and the spectral value quantitative characterization of the evolution process are realized.
2. The method for nondestructive characterization of micro-area structural damage of a semiconductor device according to claim 1, wherein S1 is used for constructing a transient current test system and collecting transient change curves of leakage current of the device before and after stress action; the accuracy of the current test system reaches millisecond level, a trap filling stage is required to be applied to a damaged part of the device before a measurement process in transient current response is measured, larger electric stress is applied in the filling stage, the damaged part of the device, namely the trap, is fully filled, then the device is switched to a small measurement bias, and the process of releasing electrons from the trap is monitored, so that a change curve of leakage current IDS along with time can be acquired; selecting a tested device, placing the tested device on a constant temperature platform with the temperature of T0, and applying an electrical bias condition to the device so as to acquire a change curve of leakage current IDS along with time;
s2, after transient drain current response is acquired, processing a transient drain current response curve to obtain a time constant spectrum of a trap, and accurately distinguishing a region with a more gentle curve amplitude change through repeated iterative computation by a time constant extraction method based on Bayesian deconvolution, wherein a time constant peak value of a device damage position can be highlighted;
trap information exists in transient current response in an e-exponential variation form as shown in a formula (1)
Figure FDA0004094978990000011
τ i Time constant, ΔI, for the ith trap i For which the amplitude of the current change is affected; time constant spectrum for extracting characteristic time constant tau of trap i The time constant is displayed in the form of peak value spectrum, and the abscissa of the peak value is the trap time constant;
first, a logarithmic time variable is introduced:
z＝lnt (2)
then, the time constant spectrum of the trap is as follows:
Figure FDA0004094978990000012
Δi (z) is the time constant spectrum, then the transient current Ids (t) is described as:
Figure FDA0004094978990000013
compared to equation (1), equation (4) is an integrated version of the channel transient current; in combination with equation (2), the transient current is converted into:
Figure FDA0004094978990000021
this is the convolution integral equation for Δi (τ); the result of differentiating z on both sides of equation (5) is:
Figure FDA0004094978990000022
the definition function W (z) is as follows:
W(z)＝exp(z-exp(z)) (7)
then
Figure FDA0004094978990000023
The expression of (2) is:
Figure FDA0004094978990000024
Figure FDA0004094978990000027
as a convolution operator, the time constant spectrum Δi (z) is:
Figure FDA0004094978990000025
the time constant spectrum is obtained by solving the Bayes deconvolution; the time constant of the damaged position of the device is presented in the form of a peak spectrum, the area enclosed by the envelope curve of the peak spectrum corresponds to the variation of the drain-source current, the abscissa corresponding to the peak value of the time constant spectrum is the time constant of the damaged position of the device, and the ordinate is the relative variation of the drain-source current caused by the damaged position of the device;
s3, accumulating the y value of the time constant spectrum according to the total variation of the peak value and the drain current to enable the y value corresponding to each time point to be equal to the accumulated value of the y values of all the previous time points, namely
Figure FDA0004094978990000026
Exchanging the x-axis value with the y-axis value to obtain an integral amplitude spectrum;
s4, first-order derivation is carried out on the integral amplitude spectrum to obtain a differential amplitude spectrum; the difference value between peak values in the differential amplitude spectrum is the absolute action intensity of the trap, namely the sum of all action intensities is equal to the change of the total transient current response, and the position and the damage degree of the damage of the micro-area structure of the device are intuitively and accurately represented; the ordinate of the peak of the differential amplitude spectrum represents the degree of independence of this type of trap.
3. The method for nondestructive characterization of semiconductor device micro-area structure damage of claim 2 wherein the characterization of S4 comprises: transient drain current collection and correction, time constant extraction, peak spectrum characterization and amplitude spectrum characterization.
CN202310163377.8A 2023-02-24 2023-02-24 Nondestructive characterization method for damage of semiconductor device micro-area structure Pending CN116298750A (en)

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