CN116282958A - Nickel oxide film and preparation method and application thereof - Google Patents

Nickel oxide film and preparation method and application thereof Download PDF

Info

Publication number
CN116282958A
CN116282958A CN202310283967.4A CN202310283967A CN116282958A CN 116282958 A CN116282958 A CN 116282958A CN 202310283967 A CN202310283967 A CN 202310283967A CN 116282958 A CN116282958 A CN 116282958A
Authority
CN
China
Prior art keywords
nickel oxide
oxide film
annealing treatment
preparation
nanoparticle ink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310283967.4A
Other languages
Chinese (zh)
Inventor
赵琦
彭小琪
唐荣风
陈涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Science and Technology of China USTC
Original Assignee
University of Science and Technology of China USTC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Science and Technology of China USTC filed Critical University of Science and Technology of China USTC
Priority to CN202310283967.4A priority Critical patent/CN116282958A/en
Publication of CN116282958A publication Critical patent/CN116282958A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/25—Oxides by deposition from the liquid phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3464—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide
    • C03C17/347—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide comprising a sulfide or oxysulfide
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3464—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide
    • C03C17/3476—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide comprising a selenide or telluride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/217—FeOx, CoOx, NiOx
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/11—Deposition methods from solutions or suspensions
    • C03C2218/111—Deposition methods from solutions or suspensions by dipping, immersion
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/11—Deposition methods from solutions or suspensions
    • C03C2218/116—Deposition methods from solutions or suspensions by spin-coating, centrifugation
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention relates to the technical field of nickel oxide nano materials, in particular to a nickel oxide film, a preparation method and application thereof. The invention disperses nickel oxide nano particles in water to form nano particle ink; coating the obtained nanoparticle ink, and then carrying out annealing treatment to obtain a nickel oxide film; the temperature of the annealing treatment is 90-180 ℃. The invention proves that the inorganic p-type nickel oxide can be used as a high-efficiency hole transport material of the planar heterojunction antimony selenide solar cell, and has higher stability. The preparation of the nickel oxide film provided by the invention adopts a simple solution process, namely, nickel oxide nano particles are dispersed in a water solvent to form nano particle ink. By spin coating the nanoparticle ink in air, followed by low temperature annealing. Experiments prove that the nickel oxide hole layer can obviously improve the device performance of the antimony selenide solar cell, and the photoelectric conversion efficiency reaches 6.25%.

Description

Nickel oxide film and preparation method and application thereof
Technical Field
The invention relates to the technical field of nickel oxide nano materials, in particular to a nickel oxide film, a preparation method and application thereof.
Background
Nickel oxide, which is rich in earth content, is a low-cost material, has a good energy band position, high hole mobility, superior thermal stability and chemical stability, and has been widely used in organic and perovskite solar cells. In fact, solution-treated nickel oxide Nanoparticles (NPs) have proven to be a simple and effective method of depositing nickel oxide films. In this process, two steps are typically involved, first synthesizing ultrafine nickel oxide NPs, and then dispersing them in a suitable solvent to form a stable nickel oxide NPs solution. However, nanoparticles prepared by a specific method have a fixed particle size and energy level, which limits their application in achieving efficient and stable solar cells.
Disclosure of Invention
The invention aims to provide a nickel oxide film, a preparation method and application thereof, so as to make up the application limit of the nickel oxide film in the aspect of high-efficiency stable solar cells.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a preparation method of a nickel oxide film, which comprises the following steps:
dispersing nickel oxide nanoparticles in water to form nanoparticle ink;
coating the obtained nanoparticle ink, and then carrying out annealing treatment to obtain a nickel oxide film;
the temperature of the annealing treatment is 90-180 ℃.
Preferably, the annealing treatment temperature is 120-150 ℃.
Preferably, the annealing treatment is carried out for 5-30 min.
Preferably, the annealing treatment time is 15-20 min.
Preferably, the concentration of the nickel oxide nano particles in the nano particle ink is 10-40 mg/mL; the particle size of the nickel oxide nano particles is 5-10 nm.
Preferably, the concentration of the nickel oxide nanoparticles in the nanoparticle ink is 20-30 mg/mL.
Preferably, the coating is spin coating, and the spin coating speed is 1000-2500 r/min, and the time is 20-40 seconds.
Preferably, the spin coating speed is 1500-2000 r/min and the time is 30-35 seconds.
The invention also provides the nickel oxide film obtained by the preparation method.
The invention also provides application of the nickel oxide film as a hole transport layer in an antimony selenide solar cell.
The invention proves that the inorganic p-type nickel oxide can be used as a high-efficiency hole transport material of the planar heterojunction antimony selenide solar cell, and has higher stability. The preparation of the nickel oxide film provided by the invention adopts a simple solution process, namely, nickel oxide nano particles are dispersed in a water solvent to form nano particle ink. By spin coating the nanoparticle ink in air, followed by low temperature annealing. Experiments prove that the nickel oxide hole layer can obviously improve the device performance of the antimony selenide solar cell, and the photoelectric conversion efficiency reaches 6.25%. The invention provides an ecological friendly, economical and efficient hole transport material with good stability for the application of an all-inorganic n-i-p antimony selenide solar cell. The invention uses water as solvent, and the reaction temperature is lower, so that the preparation process is simple and environment-friendly, and the film has higher compactness and flatness.
Drawings
FIG. 1 is an X-ray diffraction pattern of nickel oxide nanoparticles used in example 1;
FIG. 2 is an SEM image (500 nm) of a nickel oxide film obtained in example 1; in the figure, (a) 10mg/mL, (b) 20mg/mL, (c) 30mg/mL, and (d) 40mg/mL;
FIG. 3 is an SEM image (200 nm) of a nickel oxide film obtained in example 1; in the figure, (a) 10mg/mL, (b) 20mg/mL, (c) 30mg/mL, and (d) 40mg/mL;
FIG. 4 is a J-V plot of nickel oxide films obtained at a concentration of 20 mg/mL.
Detailed Description
The invention provides a preparation method of a nickel oxide film, which comprises the following steps:
dispersing nickel oxide nanoparticles in water to form nanoparticle ink;
coating the obtained nanoparticle ink, and then carrying out annealing treatment to obtain a nickel oxide film;
the temperature of the annealing treatment is 90-180 ℃.
In the present invention, the concentration of nickel oxide nanoparticles in the nanoparticle ink is 10 to 40mg/mL, preferably 20 to 30mg/mL.
In the invention, the coating is spin coating, and the spin coating speed is 1000-2500 r/min, preferably 1500-2000 r/min; the time is 20 to 40 seconds, preferably 30 to 35 seconds.
In the present invention, the temperature of the annealing treatment is preferably 120 to 150 ℃, and more preferably 130 to 140 ℃.
In the present invention, the annealing treatment time is 5 to 30 minutes, preferably 15 to 20 minutes.
The invention also provides application of the nickel oxide film obtained by the preparation method as a hole transport layer in an antimony selenide solar cell.
The technical solutions provided by the present invention are described in detail below with reference to examples, but they should not be construed as limiting the scope of the present invention.
Example 1
10-40 mg of nickel oxide nanoparticles are respectively dispersed in 1mL of ultrapure water solvent to form nanoparticle ink, and the nanoparticle ink is spin-coated (1500 rpm, 30 s) in air and then annealed at 120 ℃ in air for 15 minutes to obtain a nickel oxide film.
The nickel oxide nanoparticles used in example 1 were subjected to X-ray diffraction analysis using an X-ray powder diffractometer, and the X-ray diffraction pattern thereof was shown in fig. 1. According to XRD diffraction patterns, the nickel oxide nano particles used in the invention have typical cubic structures and good crystallinity.
The nickel oxide film obtained in example 1 was analyzed by scanning electron microscopy to obtain a scanning electron micrograph thereof, as shown in fig. 2 and 3.
As can be seen from fig. 2, the prepared nickel oxide film was dense and smooth, and as can be seen from fig. 3, the thickness of the nickel oxide film can be adjusted by adjusting the concentration of the nickel oxide nanoink in example 1.
Example 2
Cadmium sulfide is deposited on FTO conductive glass by adopting a chemical bath deposition method, the temperature of a water bath is 66 ℃ for 14min, antimony selenide is deposited on the surface of the cadmium sulfide to be used as a light absorption layer by adopting a thermal evaporation method, nickel oxide is deposited on the surface of the antimony selenide to be used as a hole transport layer by adopting a spin coating method according to the operation of the embodiment 1, the spin coating rotating speed is 1000-2500 r/min, and finally a 70nm gold electrode is deposited by adopting a vacuum evaporation method.
The current density-voltage (J-V) curve of the battery device obtained above was measured under the irradiation of solar radiation (1.5G), and the corresponding photovoltaic parameters are shown in table 1.
TABLE 1 parameters of antimony selenide devices corresponding to different spin speeds
Figure BDA0004139235960000031
Figure BDA0004139235960000041
As can be seen from Table 1, the spin-coating speed was in the range of 1000 to 2500rpm, and excellent properties were obtained; and when the spin-coating rotating speed is 1500rpm, various parameters of the antimony selenide device are optimal.
Example 3
Cadmium sulfide is deposited on FTO conductive glass by adopting a chemical bath deposition method, the temperature of a water bath is 66 ℃ for 14min, antimony selenide is deposited on the surface of the cadmium sulfide to be used as a light absorption layer by adopting a thermal evaporation method, nickel oxide is deposited on the surface of the antimony selenide to be used as a hole transport layer by adopting a spin coating method according to the operation of the embodiment 1, annealing is carried out for 15 min at the temperature of 90-180 ℃ in air, and finally a 70nm gold electrode is deposited by adopting a vacuum evaporation method.
The current density-voltage (J-V) curve of the battery device obtained above was measured under the irradiation of solar radiation (1.5G), and the corresponding photovoltaic parameters are shown in table 1.
TABLE 2 parameters of antimony selenide devices for different annealing temperatures
Figure BDA0004139235960000042
As is clear from Table 2, excellent properties were obtained at the annealing temperature in the range of 90 to 180 ℃; and when the annealing temperature is 120 ℃, various parameters of the antimony selenide device reach the best.
Example 4
Cadmium sulfide is deposited on FTO conductive glass by adopting a chemical bath deposition method, the temperature of a water bath is 66 ℃ for 14min, antimony selenide is deposited on the surface of the cadmium sulfide to be used as a light absorption layer by adopting a thermal evaporation method, nickel oxide is deposited on the surface of the antimony selenide to be used as a hole transport layer by adopting a spin coating method according to the operation of the embodiment 1, and finally a 70nm gold electrode is deposited by adopting a vacuum evaporation mode.
The current density-voltage (J-V) curve of the battery device obtained above was measured under the irradiation of solar radiation (1.5G), and the corresponding photovoltaic parameters are shown in table 1. As can be seen from Table 1, when the concentration of nickel oxide is 20mg/mL, PCE of the device is optimal and can reach 6.25%, the corresponding J-V curves are shown in FIG. 4, and the open circuit Voltage (VOC), short circuit current density (JSC) and Fill Factor (FF) of the device can reach 0.40V and 29.21mA.cm respectively -2 And 53.10%.
TABLE 3 parameters of antimony selenide devices corresponding to different Nickel oxide concentrations
Figure BDA0004139235960000051
As is clear from Table 3, the concentration of nickel oxide was 10 to 40mg mL -1 Is of (2)Excellent performance can be obtained in the enclosure; and the nickel oxide concentration was 20mg mL -1 When the parameters of the antimony selenide device are optimized.
The present invention prepares high quality non-stoichiometric nickel oxide colloid Nanometer Particle (NPs) film through dispersing the NPs directly into water solution at room temperature. The deposited nickel oxide film has compact and uniform morphology, is covered on the antimony selenide absorption layer, and has no pinholes. The solar cell device is assembled by the solar cell module, and the highest photoelectric conversion efficiency can reach 6.25%.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.

Claims (10)

1. The preparation method of the nickel oxide film is characterized by comprising the following steps:
dispersing nickel oxide nanoparticles in water to form nanoparticle ink;
coating the obtained nanoparticle ink, and then carrying out annealing treatment to obtain a nickel oxide film;
the temperature of the annealing treatment is 90-180 ℃.
2. The method according to claim 1, wherein the annealing treatment is performed at a temperature of 120 to 150 ℃.
3. The method according to claim 1 or 2, wherein the annealing treatment is carried out for a period of 5 to 30 minutes.
4. The method according to claim 3, wherein the annealing treatment is carried out for 15 to 20 minutes.
5. The method of claim 1, 2 or 4, wherein the concentration of nickel oxide nanoparticles in the nanoparticle ink is 10-40 mg/mL; the particle size of the nickel oxide nano particles is 5-10 nm.
6. The method of claim 5, wherein the concentration of nickel oxide nanoparticles in the nanoparticle ink is 20-30 mg/mL.
7. The method of claim 1, 2, 4 or 6, wherein the coating is spin coating at a speed of 1000 to 2500r/min for 20 to 40 seconds.
8. The method according to claim 7, wherein the spin coating is performed at a speed of 1500 to 2000r/min for 30 to 35 seconds.
9. A nickel oxide film obtained by the production process according to any one of claims 1 to 8.
10. Use of the nickel oxide film of claim 9 as a hole transport layer in an antimony selenide solar cell.
CN202310283967.4A 2023-03-20 2023-03-20 Nickel oxide film and preparation method and application thereof Pending CN116282958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310283967.4A CN116282958A (en) 2023-03-20 2023-03-20 Nickel oxide film and preparation method and application thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310283967.4A CN116282958A (en) 2023-03-20 2023-03-20 Nickel oxide film and preparation method and application thereof

Publications (1)

Publication Number Publication Date
CN116282958A true CN116282958A (en) 2023-06-23

Family

ID=86779455

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310283967.4A Pending CN116282958A (en) 2023-03-20 2023-03-20 Nickel oxide film and preparation method and application thereof

Country Status (1)

Country Link
CN (1) CN116282958A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106803535A (en) * 2016-12-13 2017-06-06 中国电子科技集团公司第十八研究所 Preparation method of hole transport layer of perovskite solar cell
US20210098202A1 (en) * 2019-10-01 2021-04-01 Korea University Research And Business Foundation Metal oxide nanoparticle ink, method of preparing the same, metal oxide nanoparticle thin film manufactured using the same, and photoelectric device using the same
WO2022063951A1 (en) * 2020-09-24 2022-03-31 Universite D'aix-Marseille Process for preparing a dispersion of non-stoichiometric nickel oxide nanoparticles in alcohol
CN114715958A (en) * 2022-03-08 2022-07-08 华能新能源股份有限公司 Spray pyrolysis method of nickel oxide and perovskite solar cell
WO2022203204A1 (en) * 2021-03-24 2022-09-29 울산대학교 산학협력단 Nickel oxide solution, and method for manufacturing solar cell that does not require heat treatment using same
CN115465902A (en) * 2022-09-29 2022-12-13 河北科技大学 Reaction solvent for preparing superfine nickel oxide nanoparticles and method for preparing superfine nickel oxide by using reaction solvent

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106803535A (en) * 2016-12-13 2017-06-06 中国电子科技集团公司第十八研究所 Preparation method of hole transport layer of perovskite solar cell
US20210098202A1 (en) * 2019-10-01 2021-04-01 Korea University Research And Business Foundation Metal oxide nanoparticle ink, method of preparing the same, metal oxide nanoparticle thin film manufactured using the same, and photoelectric device using the same
WO2022063951A1 (en) * 2020-09-24 2022-03-31 Universite D'aix-Marseille Process for preparing a dispersion of non-stoichiometric nickel oxide nanoparticles in alcohol
WO2022203204A1 (en) * 2021-03-24 2022-09-29 울산대학교 산학협력단 Nickel oxide solution, and method for manufacturing solar cell that does not require heat treatment using same
CN114715958A (en) * 2022-03-08 2022-07-08 华能新能源股份有限公司 Spray pyrolysis method of nickel oxide and perovskite solar cell
CN115465902A (en) * 2022-09-29 2022-12-13 河北科技大学 Reaction solvent for preparing superfine nickel oxide nanoparticles and method for preparing superfine nickel oxide by using reaction solvent

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
周静: "《功能材料制备及物理性能分析》", 武汉理工大学出版社, pages: 56 - 57 *
金鑫: "无机硫族半导体薄膜制备及其太阳能电池性能的研究", 中国博士学位论文全文数据库工程科技Ⅱ辑, pages 107 - 117 *

Similar Documents

Publication Publication Date Title
CN102326260B (en) Methods of manufacture and applications of copper delafossite transparent P-type semiconductor
Etgar et al. High efficiency quantum dot heterojunction solar cell using anatase (001) TiO2 nanosheets
Tang et al. In situ preparation of CuInS 2 films on a flexible copper foil and their application in thin film solar cells
KR101197228B1 (en) Method for Manufacturing Light Absorbing Layer of Compound Semiconductor Solar Cell
Salem et al. Inverted polymer solar cell based on MEH-PPV/PC61BM coupled with ZnO nanoparticles as electron transport layer
Zhao et al. Highly efficient aqueous-processed polymer/nanocrystal hybrid solar cells with an aqueous-processed TiO 2 electron extraction layer
Srivastava et al. Nickel oxide embedded with polymer electrolyte as efficient hole transport material for perovskite solar Cell
Liu et al. The dual interfacial modification of 2D gC 3 N 4 for high-efficiency and stable planar perovskite solar cells
CN110534652B (en) Perovskite solar cell and preparation method thereof
Runa et al. Highly reproducible perovskite solar cells based on solution coating from mixed solvents
CN114086238A (en) Gamma-Ga2O3Or Cu doped gamma-Ga2O3Nanocrystalline and preparation method and application thereof
Bo et al. Trilaminar graphene/tremella-like CuInS 2/graphene oxide nanofilms and the enhanced activity for photoelectrochemical water splitting
Oku et al. Fabrication and characterization of perovskite photovoltaic devices with TiO2 nanoparticle layers
CN106953019A (en) A kind of Ca-Ti ore type solar cell and preparation method thereof
Zhao et al. Atmospheric preparation of ZnO thin films by mist chemical vapor deposition for spray-coated organic solar cells
CN116282958A (en) Nickel oxide film and preparation method and application thereof
Dai et al. Hydrolysis preparation of the compact TiO2 layer using metastable TiCl4 isopropanol/water solution for inorganic–organic hybrid heterojunction perovskite solar cells
Li et al. An annealing-free anatase TiO 2 nanocrystal film as an electron collection layer in organic solar cells
CN115867058A (en) Near-infrared photoelectric detector based on MXene electronic transmission layer and preparation method thereof
Luo Applications in photovoltaics
Wang et al. Effect of sulfurization temperature on the property of Cu 2 ZnSnS 4 thin film by eco-friendly nanoparticle ink method
Xiaoyan et al. Hydrolysis preparation of the compact TiO2 layer using metastable TiCl4 isopropanol/water solution for inorganic–organic hybrid heterojunction perovskite solar cells
Lee et al. Efficient slot-die-processed perovskite solar cells with 3-allyloxy-1, 2-propanediol additive
Motoyoshi et al. Fabrication and characterization of copper system compound semiconductor solar cells
Guo et al. γ-Fe2O3 as a novel electron transporting material for planar heterojunction perovskite solar cells by simple room-temperature solution method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination