CN116281975A - A Method for Preparation of Nanomaterials by AC Combination Plasma - Google Patents
A Method for Preparation of Nanomaterials by AC Combination Plasma Download PDFInfo
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Abstract
Description
技术领域:Technical field:
本发明属于纳米材料制备技术领域,尤其涉及一种交流组合等离子体制备纳米材料的方法。The invention belongs to the technical field of preparation of nanometer materials, and in particular relates to a method for preparing nanometer materials by alternating current combined plasma.
背景技术:Background technique:
近年来,纳米材料的研究相当活跃,以石墨烯为典型的二维纳米材料由于其结构的特殊性,电子迁移率高、导热性好、比表面积大和机械强度强等特点尤为突出。随着等离子体技术的不断发展,它在纳米材料科学与技术领域,特别是纳米材料的制备、改性和应用方面,显示出了独特的优势。In recent years, the research on nanomaterials has been quite active. Two-dimensional nanomaterials such as graphene are particularly prominent due to their special structure, high electron mobility, good thermal conductivity, large specific surface area and strong mechanical strength. With the continuous development of plasma technology, it has shown unique advantages in the field of nanomaterial science and technology, especially in the preparation, modification and application of nanomaterials.
中国专利公开号为CN111453719A公开了一种高品质石墨烯及其制备方法,该发明向石墨粉中加入氧化剂溶液进行微膨,后进行微波等离子体处理,获得石墨烯。该发明将微波等离子体技术引入制备石墨烯的过程中,以石墨粉等为原料通过特定工艺方法制备石墨烯,从而改进了反应时间长、石墨烯缺陷多、废液对环境污染的问题,但在制备过程中需要洗涤、纯化、干燥等操作,步骤复杂,操作繁琐,设备价格偏高。The Chinese Patent Publication No. CN111453719A discloses a high-quality graphene and its preparation method. In this invention, an oxidant solution is added to graphite powder for micro-expansion, followed by microwave plasma treatment to obtain graphene. This invention introduces microwave plasma technology into the process of preparing graphene, and uses graphite powder as raw materials to prepare graphene through a specific process, thereby improving the problems of long reaction time, many graphene defects, and environmental pollution from waste liquid. In the preparation process, operations such as washing, purification, and drying are required, the steps are complicated, the operation is cumbersome, and the equipment price is high.
中国专利公开号为CN109534328A公开了一种二维的氮掺杂石墨烯及其制备方法,该发明在高温下使铜片退火,在等离子体发生器作用下,氨气、甲烷进行裂解,并在铜的催化作用下,沉积在铜基底表面,组装得到氮掺杂石墨烯材料。氮掺杂石墨烯的制备温度降低至400℃,反应时间也大大缩短,操作简单,重复性好。但制备过程中需要基底,且产量较低,不适合大规模生产。Chinese Patent Publication No. CN109534328A discloses a two-dimensional nitrogen-doped graphene and its preparation method. The invention anneals the copper sheet at high temperature, and under the action of the plasma generator, ammonia and methane are cracked, and the Under the catalysis of copper, it is deposited on the surface of the copper substrate, and the nitrogen-doped graphene material is assembled. The preparation temperature of nitrogen-doped graphene is reduced to 400°C, the reaction time is also greatly shortened, the operation is simple, and the repeatability is good. However, substrates are required in the preparation process, and the yield is low, which is not suitable for large-scale production.
中国专利公开号为CN113200528A公开了一种高纯α相氮化硅粉末的制备方法及制备设备,该发明利用高纯氮气等离子体在催化剂的作用下,高纯硅粉经等离子体电弧快速反应得到非晶态的氮化硅粉末,最后经过管式炉煅烧得到α相氮化硅。该方法得到的产物粒径分布均匀、纯度较高。但制备方法仍为气体与固体反应,高纯硅粉会较多沉积在等离子体区域,阻碍反应连续进行。Chinese Patent Publication No. CN113200528A discloses a preparation method and equipment for high-purity α-phase silicon nitride powder. The invention uses high-purity nitrogen plasma under the action of a catalyst, and high-purity silicon powder is rapidly reacted by plasma arc to obtain The amorphous silicon nitride powder is finally calcined in a tube furnace to obtain α-phase silicon nitride. The product obtained by the method has uniform particle size distribution and high purity. However, the preparation method is still the reaction of gas and solid, and high-purity silicon powder will be deposited in the plasma area more often, hindering the continuous progress of the reaction.
高频交流旋转滑动电弧等离子体相较于其他形式的等离子来说,设备构造简单、费用低、操作方便,还不会因压力变化而受到限制。因此滑动弧放电被广泛应用和研究于甲烷气体重整、污染物降解、纳米材料制备、改性及其他领域。相较于高频交流电,单相或三相工频交流电源的发电机、变压器构造更加简单,性能优良。在同样条件输出同样功率时的电能损耗较少,可以有效的节能。将这两种交流电弧等离子体组合使用,能够扩大放电区域,维持长时间稳定放电,适合大规模制备纳米材料,本案由此而生。Compared with other forms of plasma, high-frequency AC rotating sliding arc plasma has simple equipment structure, low cost, convenient operation, and will not be limited by pressure changes. Therefore, sliding arc discharge has been widely used and researched in methane gas reforming, pollutant degradation, nanomaterial preparation, modification and other fields. Compared with high-frequency AC power, generators and transformers of single-phase or three-phase power frequency AC power supply are simpler in structure and have excellent performance. When outputting the same power under the same conditions, the power loss is less, which can effectively save energy. The combined use of these two AC arc plasmas can expand the discharge area and maintain long-term stable discharge, which is suitable for large-scale preparation of nanomaterials. This case was born from this.
发明内容:Invention content:
本发明针对上述现有技术存在的问题做出改进,即本发明所要解决的技术问题是提供一种交流组合等离子体制备纳米材料的方法,流程简单、合理,无需催化剂及衬底,成本低廉,绿色环保,适用于连续大规模制备纳米材料。The present invention makes improvements to the problems existing in the above-mentioned prior art, that is, the technical problem to be solved by the present invention is to provide a method for preparing nanomaterials with alternating current combined plasma, the process is simple and reasonable, no catalyst and substrate are required, and the cost is low. Green and environmentally friendly, it is suitable for continuous large-scale preparation of nanomaterials.
为了实现上述目的,本发明采用的技术方案是:一种交流组合等离子体制备纳米材料的方法,包括依次连接的气体流量控制装置、高频交流旋转滑动电弧等离子体发生器、单相或三相交流电弧等离子体发生器、流化床以及分离除尘装置,分离除尘装置的出气端通过引风系统与尾气处理装置相连接,分离除尘装置的出料端与收集装置相连接,包括以下步骤:In order to achieve the above purpose, the technical solution adopted by the present invention is: a method for preparing nanomaterials with AC combined plasma, including sequentially connected gas flow control devices, high-frequency AC rotating sliding arc plasma generators, single-phase or three-phase An AC arc plasma generator, a fluidized bed, and a dedusting device, the outlet end of the dedusting device is connected to the tail gas treatment device through an induced draft system, and the outlet end of the dedusting device is connected to the collecting device, including the following steps:
(1)打开引风系统调整高频交流旋转滑动电弧等离子体发生器、单相或三相交流电弧等离子体发生器的等离子体反应区域压力,形成负压条件;(1) Turn on the air induction system to adjust the pressure of the plasma reaction area of the high-frequency AC rotary sliding arc plasma generator, single-phase or three-phase AC arc plasma generator, and form a negative pressure condition;
(2)将缓冲气体通入高频交流旋转滑动电弧等离子体发生器的等离子体反应区域内,开启高频交流电源后将缓冲气体裂解形成旋转滑动电弧等离子体;初步电离后的缓冲气体接着进入单相或三相交流电弧等离子体发生器的等离子体反应区域内,开启单相或三相交流电源,初步电离的缓冲气体在单相或三相交流电源作用下,形成稳定的单相或三相交流电弧等离子体;(2) Pass the buffer gas into the plasma reaction area of the high-frequency AC rotating sliding arc plasma generator, turn on the high-frequency AC power supply, and crack the buffer gas to form rotating sliding arc plasma; the buffer gas after initial ionization then enters In the plasma reaction area of the single-phase or three-phase AC arc plasma generator, turn on the single-phase or three-phase AC power supply, and the initially ionized buffer gas forms a stable single-phase or three-phase AC power supply under the action of the single-phase or three-phase AC power supply. Phase AC arc plasma;
(3)通入原料气体,原料气体依次穿过高频交流旋转滑动电弧等离子体发生器和单相或三相交流电弧等离子体发生器的等离子体反应区域,原料气发生裂解后进入流化床,自由基通过成核、生长,继续生长为纳米粉体材料;(3) Feed in the raw material gas, the raw material gas passes through the plasma reaction area of the high-frequency AC rotary sliding arc plasma generator and the single-phase or three-phase AC arc plasma generator in turn, and the raw material gas enters the fluidized bed after cracking , free radicals continue to grow into nanopowder materials through nucleation and growth;
(4)经步骤(3)处理后的纳米材料产物进入分离除尘装置,分离得到的纳米材料产物进入收集装置中,经冷却后得到纳米材料;而分离输出的尾气通过引风系统送入尾气处理装置。(4) The nano-material product processed in step (3) enters the separation and dust removal device, and the separated nano-material product enters the collection device, and the nano-material is obtained after cooling; the exhaust gas from the separation is sent to the exhaust gas treatment through the induced draft system device.
进一步的,所述气体流量控制装置为相连接的转子流量计及质量流量计;所述引风系统为引风机或真空泵;所述分离除尘装置为相连接的旋风分离器和布袋除尘器。Further, the gas flow control device is a connected rotameter and a mass flow meter; the induced air system is an induced fan or a vacuum pump; the separation and dust removal device is a connected cyclone separator and bag filter.
进一步的,所述高频交流旋转滑动电弧等离子体发生器连接有电极气冷装置;所述单相或三相交流电弧等离子体发生器设有漏电保护装置。Further, the high-frequency AC rotary sliding arc plasma generator is connected with an electrode air cooling device; the single-phase or three-phase AC arc plasma generator is provided with a leakage protection device.
进一步的,纳米材料为炭黑颗粒、石墨烯片、氮掺杂石墨烯片层或者氮化硅颗粒。Further, the nanomaterial is carbon black particles, graphene sheets, nitrogen-doped graphene sheets or silicon nitride particles.
进一步的,所述流化床采用下行流化床的结构,气体压力保持为20-90 kPa的负压条件。Further, the fluidized bed adopts the structure of a descending fluidized bed, and the gas pressure is maintained at a negative pressure condition of 20-90 kPa.
进一步的,步骤(2)中,所述高频交流旋转滑动电弧等离子体发生器的功率为1-200kW,频率为30 kHz-300kHz;所述单相或三相交流电弧等离子体发生器的功率为5kW~2000 kW,频率为50Hz。Further, in step (2), the power of the high-frequency AC rotating sliding arc plasma generator is 1-200kW, and the frequency is 30 kHz-300kHz; the power of the single-phase or three-phase AC arc plasma generator 5kW ~ 2000 kW, the frequency is 50Hz.
进一步的,步骤(2)中,所述缓冲气体为氩气、氦气、氖气中的一种或多种,总气体流量为4-100L/min;步骤(3)中,原料气体为甲烷、乙烷、丙烷、氮气、氨气、氮气、硅烷、氢气中的一种或多种,分别作为碳源、氮源、硅源、添加剂,总气体流量为0.5-20 L/min。Further, in step (2), the buffer gas is one or more of argon, helium, and neon, and the total gas flow is 4-100L/min; in step (3), the raw gas is methane , ethane, propane, nitrogen, ammonia, nitrogen, silane, hydrogen, one or more, respectively as carbon source, nitrogen source, silicon source, additive, the total gas flow is 0.5-20 L/min.
进一步的,所述缓冲气体与原料气体的流量比在1:1至20:1之间;缓冲气体、原料气体、固体产物在流化床中停留时间为0.5-10s。Further, the flow ratio of the buffer gas to the raw material gas is between 1:1 and 20:1; the residence time of the buffer gas, raw gas and solid product in the fluidized bed is 0.5-10s.
进一步的,步骤(2)中,所述单相或三相交流电弧等离子体发生器的电极由两根或三根石墨棒组成,当采用单相交流电弧等离子体发生器时,单相交流电弧等离子体发生器的电极由两根石墨棒组成时,电极与进料气在同一水平面内,两根石墨棒夹角为0°到180°;当采用三相交流电弧等离子体发生器时,三相交流电弧等离子体发生器的电极由三根石墨棒组成时,三根石墨棒在同一水平面内,按照相差排列或平行排列,且相差排列夹角为120°。Further, in step (2), the electrodes of the single-phase or three-phase AC arc plasma generator are composed of two or three graphite rods. When a single-phase AC arc plasma generator is used, the single-phase AC arc plasma When the electrode of the bulk generator is composed of two graphite rods, the electrode and the feed gas are in the same horizontal plane, and the angle between the two graphite rods is 0° to 180°; when a three-phase AC arc plasma generator is used, the three-phase When the electrodes of the AC arc plasma generator are composed of three graphite rods, the three graphite rods are arranged in the same horizontal plane according to the phase difference or parallel arrangement, and the angle between the phase difference arrangement is 120°.
进一步的,单相或三相交流电弧等离子体发生器的电极距离随石墨电极被剥离后可自动调节,交流滑动电弧引弧后的单相或三相交流电弧正常放电的电极距离由1-10mm扩大至1-40mm;等离子体区域内的温度为500K-10000K。Further, the electrode distance of the single-phase or three-phase AC arc plasma generator can be automatically adjusted after the graphite electrode is stripped, and the electrode distance of the normal discharge of the single-phase or three-phase AC arc after the AC sliding arc is started is 1-10mm Expand to 1-40mm; the temperature in the plasma area is 500K-10000K.
与现有技术相比,本发明具有以下效果:本发明设计合理,在负压条件下通过高频交流旋转滑动电弧初步电离缓冲气体,进而激发单相或三相工频放电,产生稳定的大功率电弧,原料气体通入后发生裂解反应,在下行流化床中成核、生长得到纳米材料,整个方法以气相原料,产物分离回收便捷,工艺流程简单,无需催化剂及衬底,成本低廉,绿色环保,适用于连续大规模制备纳米材料。Compared with the prior art, the present invention has the following effects: the design of the present invention is reasonable, under the condition of negative pressure, the buffer gas is preliminarily ionized through the high-frequency AC rotating sliding arc, and then the single-phase or three-phase power frequency discharge is excited to generate a stable large Power arc, the cracking reaction occurs after the raw material gas is introduced, nucleation and growth in the downward fluidized bed to obtain nanomaterials, the whole method uses gas phase raw materials, the product separation and recovery is convenient, the process is simple, no catalyst and substrate are required, and the cost is low. Green and environmentally friendly, it is suitable for continuous large-scale preparation of nanomaterials.
附图说明:Description of drawings:
图1是本发明实施例流程框图;Fig. 1 is a flow chart of an embodiment of the present invention;
图2是本发明中实施例1制得的炭黑颗粒的SEM图;Fig. 2 is the SEM figure of the carbon black particle that embodiment 1 makes among the present invention;
图3是本发明中实施例2制得的石墨烯的SEM图;Fig. 3 is the SEM figure of the graphene that embodiment 2 makes among the present invention;
图4是本发明中实施例3制得的氮掺杂石墨烯的SEM图;Fig. 4 is the SEM figure of the nitrogen-doped graphene that embodiment 3 makes among the present invention;
图5是本发明中对比例2制得的氮掺杂石墨烯的SEM图。5 is an SEM image of nitrogen-doped graphene prepared in Comparative Example 2 of the present invention.
具体实施方式:Detailed ways:
下面结合附图和具体实施方式对本发明做进一步详细的说明。The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.
在本发明的描述中,需要理解的是,术语“ 纵向”、“ 横向”、“ 上”、“ 下”、“ 前”、“ 后”、“ 左”、“ 右”、“ 竖直”、“ 水平”、“ 顶”、“ 底”、“ 内”、“ 外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。In describing the present invention, it should be understood that the terms "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", The orientations or positional relationships indicated by "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of describing the present invention, rather than indicating or It should not be construed as limiting the invention by implying that a referenced device or element must have a particular orientation, be constructed, and operate in a particular orientation.
如图1所示,本发明一种交流组合等离子体制备纳米材料的方法,采用的装置包括依次连接的气体流量控制装置、高频交流旋转滑动电弧等离子体发生器、单相或三相交流电弧等离子体发生器、流化床以及分离除尘装置,分离除尘装置的出气端通过引风系统与尾气处理装置相连接,分离除尘装置的出料端与收集装置相连接。在负压条件下通过高频交流旋转滑动电弧初步电离缓冲气体,进而激发单相或三相工频放电,产生稳定的大功率电弧,原料气体通入后发生裂解反应,在下行流化床中成核、生长得到纳米材料。具体制备纳米材料的方法包括以下步骤:As shown in Figure 1, the present invention is a method for preparing nanomaterials with AC combined plasma. A plasma generator, a fluidized bed, and a separation and dust removal device. The gas outlet of the separation and dust removal device is connected to the tail gas treatment device through an air induction system, and the discharge end of the separation and dust removal device is connected to the collection device. Under the condition of negative pressure, the buffer gas is preliminarily ionized through the high-frequency AC rotating sliding arc, and then the single-phase or three-phase power frequency discharge is excited to generate a stable high-power arc. Nucleation, growth to obtain nanomaterials. The specific method for preparing nanomaterials comprises the following steps:
(1)打开引风系统调整高频交流旋转滑动电弧等离子体发生器、单相或三相交流电弧等离子体发生器的等离子体反应区域压力,在等离子体反应区域形成负压条件;(1) Turn on the air induction system to adjust the pressure of the plasma reaction area of the high-frequency AC rotary sliding arc plasma generator, single-phase or three-phase AC arc plasma generator, and form a negative pressure condition in the plasma reaction area;
(2)将缓冲气体通入高频交流旋转滑动电弧等离子体发生器的等离子体反应区域内,开启高频交流电源后将缓冲气体裂解形成旋转滑动电弧等离子体;初步电离后的缓冲气体接着进入单相或三相交流电弧等离子体发生器的等离子体反应区域内,开启单相或三相交流电源,初步电离的缓冲气体在单相或三相交流电源作用下,形成稳定的单相或三相交流电弧等离子体;(2) Pass the buffer gas into the plasma reaction area of the high-frequency AC rotating sliding arc plasma generator, turn on the high-frequency AC power supply, and crack the buffer gas to form rotating sliding arc plasma; the buffer gas after initial ionization then enters In the plasma reaction area of the single-phase or three-phase AC arc plasma generator, turn on the single-phase or three-phase AC power supply, and the initially ionized buffer gas forms a stable single-phase or three-phase AC power supply under the action of the single-phase or three-phase AC power supply. Phase AC arc plasma;
(3)通入原料气体,原料气体依次穿过高频交流旋转滑动电弧等离子体发生器和单相或三相交流电弧等离子体发生器的等离子体反应区域,原料气发生裂解后进入流化床,自由基通过成核、生长,继续生长为纳米粉体材料;(3) Feed in the raw material gas, the raw material gas passes through the plasma reaction area of the high-frequency AC rotary sliding arc plasma generator and the single-phase or three-phase AC arc plasma generator in turn, and the raw material gas enters the fluidized bed after cracking , free radicals continue to grow into nanopowder materials through nucleation and growth;
(4)经步骤(3)处理后的纳米材料产物进入分离除尘装置,分离得到的纳米材料产物进入收集装置中,经冷却后得到纳米材料;而分离输出的尾气通过引风系统送入尾气处理装置。(4) The nano-material product processed in step (3) enters the separation and dust removal device, and the separated nano-material product enters the collection device, and the nano-material is obtained after cooling; the exhaust gas from the separation is sent to the exhaust gas treatment through the induced draft system device.
本实施例中,所述气体流量控制装置为相连接的转子流量计及质量流量计,气体流量通过转子流量计及质量流量计调整。优选的,质量流量计流量量程为0-200 L/min,以50-150 L/min为佳。In this embodiment, the gas flow control device is a connected rotameter and a mass flowmeter, and the gas flow is adjusted by the rotameter and the mass flowmeter. Preferably, the flow range of the mass flow meter is 0-200 L/min, preferably 50-150 L/min.
本实施例中,所述引风系统为引风机或真空泵。In this embodiment, the induced draft system is an induced draft fan or a vacuum pump.
本实施例中,所述分离除尘装置为相连接的旋风分离器和布袋除尘器,通过旋风分离器和布袋除尘器将步骤(4)所得纳米材料与气体产物分离,气体排空或循环使用。其中,旋风分离器的高200-600cm、直径40-60cm。In this embodiment, the separation and dedusting device is a connected cyclone separator and bag filter, and the nanomaterial obtained in step (4) is separated from the gas product by the cyclone separator and bag filter, and the gas is evacuated or recycled. Wherein, the height of the cyclone separator is 200-600cm, and the diameter is 40-60cm.
本实施例中,收集装置分为高20-40cm、直径10-20cm陶瓷或刚玉管,高50-100cm、直径20-40cm的不锈钢沉降管,可根据流化床反应器更换进行更换。In this embodiment, the collection device is divided into a ceramic or corundum tube with a height of 20-40 cm and a diameter of 10-20 cm, and a stainless steel settling tube with a height of 50-100 cm and a diameter of 20-40 cm, which can be replaced according to the replacement of the fluidized bed reactor.
本实施例中,所述高频交流旋转滑动电弧等离子体发生器连接有电极气冷装置,用于对电极进行气冷。所述高频交流旋转滑动电弧等离子体发生器的功率为1-200kW,频率为30kHz-300kHz,高频交流旋转滑动电弧等离子体发生器的电极由锥形不锈钢电极以及圆柱型高纯石墨组成,这部分结构为现有技术,例如参见CN216217684U公开的一种滑动弧等离子体装置,此处不再对高频交流旋转滑动电弧等离子体发生器的电机结构做过多重复赘述。In this embodiment, the high-frequency AC rotating sliding arc plasma generator is connected with an electrode air cooling device for air cooling the electrodes. The power of the high-frequency AC rotating sliding arc plasma generator is 1-200kW, and the frequency is 30kHz-300kHz. The electrodes of the high-frequency AC rotating sliding arc plasma generator are composed of conical stainless steel electrodes and cylindrical high-purity graphite. This part of the structure is the prior art, for example, refer to a sliding arc plasma device disclosed in CN216217684U, and the motor structure of the high-frequency AC rotating sliding arc plasma generator will not be repeated here.
本实施例中,所述单相或三相交流电弧等离子体发生器设有漏电保护装置,以便进行漏电保护。所述单相或三相交流电弧等离子体发生器的功率为5kW~2000 kW,频率为50Hz。所述单相或三相交流电弧等离子体发生器处于交流旋转滑动电弧上方,所述单相或三相交流电弧等离子体发生器的电极由两根或三根石墨棒组成,当采用单相交流电弧等离子体发生器时,单相交流电弧等离子体发生器的电极由两根石墨棒组成时,电极与进料气在同一水平面内,两根石墨棒夹角为0°到180°,即基本平行或对立。当采用三相交流电弧等离子体发生器时,三相交流电弧等离子体发生器的电极由三根石墨棒组成时,三根石墨棒在同一水平面内,按照相差均匀排列或基本平行排列,即:各电极按照相差排列夹角为120°进行均匀排列,或者各电极夹角为0°实现基本平行。In this embodiment, the single-phase or three-phase AC arc plasma generator is provided with a leakage protection device for leakage protection. The power of the single-phase or three-phase AC arc plasma generator is 5kW-2000kW, and the frequency is 50Hz. The single-phase or three-phase AC arc plasma generator is above the AC rotating sliding arc, and the electrodes of the single-phase or three-phase AC arc plasma generator are composed of two or three graphite rods. For the plasma generator, when the electrode of the single-phase AC arc plasma generator is composed of two graphite rods, the electrode and the feed gas are in the same horizontal plane, and the angle between the two graphite rods is 0° to 180°, that is, basically parallel or opposites. When a three-phase AC arc plasma generator is used, when the electrodes of the three-phase AC arc plasma generator are composed of three graphite rods, the three graphite rods are in the same horizontal plane, arranged evenly or basically in parallel according to the phase difference, that is: each electrode Arrange evenly according to the phase difference arrangement angle of 120°, or the electrodes are basically parallel at an angle of 0°.
本实施例中,所述纳米材料为炭黑颗粒、石墨烯片层、氮掺杂石墨烯片层或氮化硅等固体粉末状纳米材料。本发明利用高频交流旋转电弧易起弧的优势,搭配单相或三相交流等离子体效率高的特点,有效扩大了等离子体反应区域。利用直接裂解气体反应物得到炭黑颗粒、石墨烯材料、氮掺杂石墨烯、氮化硅,所得炭黑颗粒的粒径为50-100nm;石墨烯片层的尺寸为100-300nm,层数为2-6层;氮掺杂石墨烯片层的尺寸为100-200nm,层数为3-10层;氮化硅颗粒的粒径为10-50 nm;纳米材料的种类及粒径可由通入缓冲气体种类、原料气体种类、工艺条件调控。In this embodiment, the nanomaterials are solid powder nanomaterials such as carbon black particles, graphene sheets, nitrogen-doped graphene sheets, or silicon nitride. The invention utilizes the advantages of easy arc starting of high-frequency alternating current rotating arc, and combines with the characteristics of high efficiency of single-phase or three-phase alternating current plasma to effectively expand the plasma reaction area. Carbon black particles, graphene materials, nitrogen-doped graphene, and silicon nitride are obtained by directly cracking gas reactants. The particle size of the obtained carbon black particles is 50-100nm; the size of graphene sheets is 100-300nm, and the 2-6 layers; the size of nitrogen-doped graphene sheets is 100-200nm, and the number of layers is 3-10 layers; the particle size of silicon nitride particles is 10-50 nm; the type and particle size of nanomaterials can be determined by general The type of buffer gas, the type of raw material gas, and the control of process conditions.
本实施例中,所述流化床采用下行流化床反应器的结构,气体压力保持为20-90kPa的负压条件,由真空泵调节。进一步的,流化床与单相或三相交流电弧等离子体反应器通过扩口相连,流化床直径是单相或三相交流电弧等离子体反应器直径的3-8倍,高度是单相或三相交流电弧等离子体反应器高度的3-10倍。所述缓冲气体、原料气体、固体产物在流化床中停留时间为0.5-10 s。In this embodiment, the fluidized bed adopts the structure of a descending fluidized bed reactor, and the gas pressure is maintained at a negative pressure condition of 20-90 kPa, which is regulated by a vacuum pump. Further, the fluidized bed is connected to the single-phase or three-phase AC arc plasma reactor through a flare, the diameter of the fluidized bed is 3-8 times the diameter of the single-phase or three-phase AC arc plasma reactor, and the height is 3-8 times that of the single-phase AC arc plasma reactor. Or 3-10 times the height of the three-phase AC arc plasma reactor. The residence time of the buffer gas, raw material gas and solid product in the fluidized bed is 0.5-10 s.
本实施例中,步骤(2)中,所述缓冲气体为容易发生裂解的氩气、氦气、氖气中的一种或多种,总气体流量为4-100L/min,以20-80 L/min为佳,气体流量通过转子流量计及质量流量计调整。In this embodiment, in step (2), the buffer gas is one or more of argon, helium, and neon that are prone to cracking, and the total gas flow rate is 4-100L/min. L/min is the best, and the gas flow is adjusted by rotameter and mass flowmeter.
本实施例中,步骤(3)中,原料气体为甲烷、乙烷、丙烷、氮气、氨气、氮气、硅烷、氢气中的一种或多种,分别作为碳源、氮源、硅源、添加剂,总气体流量为0.5-20 L/min,以2-15 L/min为佳,气体流量通过转子流量计及质量流量计调整;所述缓冲气体与原料气体的流量比在1:1至20:1之间,以5:1至10:1为佳。In this embodiment, in step (3), the raw material gas is one or more of methane, ethane, propane, nitrogen, ammonia, nitrogen, silane, and hydrogen, which are used as carbon source, nitrogen source, silicon source, Additives, the total gas flow rate is 0.5-20 L/min, preferably 2-15 L/min, the gas flow rate is adjusted by a rotameter and a mass flow meter; the flow ratio of the buffer gas to the raw material gas is between 1:1 and Between 20:1, preferably 5:1 to 10:1.
本实施例中,单相或三相交流电弧等离子体发生器的电极距离随石墨电极被剥离后可自动调节,交流滑动电弧引弧后的单相或三相交流电弧正常放电的电极距离由1-10mm扩大至1-40mm;等离子体区域内的温度为500K-10000K。In this embodiment, the electrode distance of the single-phase or three-phase AC arc plasma generator can be automatically adjusted after the graphite electrodes are peeled off. -10mm is expanded to 1-40mm; the temperature in the plasma region is 500K-10000K.
本实施例中,高频交流电弧能够不断击穿电极之间的缓冲气体,使其非容易发生电离。相较于高频交流电,单相或三相工频交流电源的发电机、变压器构造更加简单,性能优良。单相或三相交流电在同样条件输出同样功率时的电能损耗较少,可以有效的节能。将这两种交流电弧等离子体组合使用,交流旋转滑动电弧等离子体可以从底部运行到顶部形成等离子体基团,使单相或三相交流电弧形成电弧更加容易,电极距离可以的拉长,减少电极的损耗,增大了等离子体反应区域。同时负压条件可以增大气体流速,减小气体密度,可以让难以电离的气体更加容易电离。而与下行流化床的结合可以让纳米材料自由基成核、生长更加充分,增大产量。本方法能够维持长时间稳定放电,适合长时间大规模制备纳米材料。这两种等离子体组合后既提高了碳材料的合成效率,又能够形成并扩大稳定的等离子体区域达到长时间大规模合成的效果。本发明以其为基础,利用交流组合等离子体,以气体作为原料,制备出炭黑颗粒,石墨烯、氮掺杂石墨烯、氮化硅颗粒。本发明工艺产物分离回收便捷,工艺流程简单,无需催化剂及衬底,成本低廉,绿色环保,适用于连续大规模制备纳米材料。In this embodiment, the high-frequency alternating current arc can continuously break down the buffer gas between the electrodes, making it less prone to ionization. Compared with high-frequency AC power, generators and transformers of single-phase or three-phase power frequency AC power supply are simpler in structure and have excellent performance. When the single-phase or three-phase alternating current outputs the same power under the same conditions, the power loss is less, which can effectively save energy. Combining these two AC arc plasmas, the AC rotating sliding arc plasma can run from the bottom to the top to form a plasma group, making it easier to form an arc with a single-phase or three-phase AC arc, and the electrode distance can be elongated and reduced Electrode wear increases the plasma reaction area. At the same time, the negative pressure condition can increase the gas flow rate, reduce the gas density, and make the gas that is difficult to ionize easier to ionize. The combination with the down-flowing fluidized bed can make the free radical nucleation and growth of nanomaterials more fully, and increase the output. The method can maintain stable discharge for a long time, and is suitable for long-term large-scale preparation of nanometer materials. The combination of these two plasmas not only improves the synthesis efficiency of carbon materials, but also can form and expand a stable plasma region to achieve the effect of long-term large-scale synthesis. The present invention is based on it, utilizes alternating current combined plasma, and uses gas as a raw material to prepare carbon black particles, graphene, nitrogen-doped graphene, and silicon nitride particles. The invention has the advantages of convenient separation and recovery of process products, simple process flow, no need for catalysts and substrates, low cost, environmental protection, and is suitable for continuous large-scale preparation of nanometer materials.
具体实施过程:The specific implementation process:
(1)开启引风机或真空泵调整等离子体反应区域压力,开启等离子体电极气冷装置、漏电保护装置、质量流量计;(1) Turn on the induced draft fan or vacuum pump to adjust the pressure in the plasma reaction area, and turn on the plasma electrode air cooling device, leakage protection device, and mass flow meter;
(2)将缓冲气体通入等离子体反应区域内,开启高频交流电源后裂解形成旋转滑动电弧等离子体,初步电离的缓冲气体在单相或三相交流电源作用下,形成稳定的单相或三相交流电弧等离子体;(2) Pass the buffer gas into the plasma reaction area, turn on the high-frequency AC power supply, and crack to form a rotating sliding arc plasma. The initially ionized buffer gas forms a stable single-phase or three-phase AC power supply under the action of a single-phase or three-phase AC power supply. Three-phase AC arc plasma;
(3)将原料气体通入等离子体发生器与下行流化床,穿过组合等离子体区域,原料气发生裂解后,进入下行流化床,自由基通过成核、生长,继续生长为纳米粉体材料;(3) Pass the raw material gas into the plasma generator and the downward fluidized bed, and pass through the combined plasma area. After the raw material gas is cracked, it enters the downward fluidized bed, and the free radicals continue to grow into nanopowder through nucleation and growth. body material;
(4)经步骤(3)处理后的纳米材料产物通过旋风分离器和布袋收集器等收集系统,被分离而进入收集装置中,冷却后得到纳米材料;尾气通过引风系统,适当处理提纯后作为原料重复利用。(4) The nano-material products processed in step (3) are separated through a collection system such as a cyclone separator and a bag collector, and then enter the collection device, and the nano-materials are obtained after cooling; the tail gas is properly treated and purified through the induced draft system Reuse as raw material.
实施例1Example 1
利用交流组合等离子体制备炭黑颗粒的方法,具体步骤如下:Utilize the method for preparing carbon black particle by alternating current combination plasma, concrete steps are as follows:
(1)开启真空泵,调整等离子体区域压力为80 kPa,开启等离子体电极气冷装置,设置为60 L/min,开启质量流量计,开启漏电保护装置;(1) Turn on the vacuum pump, adjust the pressure in the plasma area to 80 kPa, turn on the plasma electrode air cooling device, set it to 60 L/min, turn on the mass flow meter, and turn on the leakage protection device;
(2)将氩气通入等离子体反应区域内,通过转子流量计及质量流量计调整流量分别为50 L/min,开启高频交流电源后裂解形成旋转滑动电弧等离子体,初步电离的氩气在三相交流电源作用下,形成稳定的三相交流电弧等离子体;(2) Pass the argon gas into the plasma reaction area, adjust the flow rate to 50 L/min through the rotameter and the mass flow meter respectively, turn on the high-frequency AC power supply and crack to form a rotating sliding arc plasma, and the initially ionized argon gas Under the action of three-phase AC power supply, a stable three-phase AC arc plasma is formed;
(3)将乙烷通入等离子体发生器与下行流化床,通过转子流量计及质量流量计调整流量分别为10 L/min,穿过组合等离子体区域,乙烷发生裂解后,进入下行流化床,自由基继续成核、生长;(3) Pass ethane into the plasma generator and the downward fluidized bed, adjust the flow rate to 10 L/min through the rotameter and the mass flow meter respectively, pass through the combined plasma area, and after the ethane is cracked, enter the downward flow In a fluidized bed, free radicals continue to nucleate and grow;
(4)反应后得到炭黑颗粒随着氩气通过旋风分离器和布袋收集器等收集系统,被分离而进入收集装置中,冷却后得到产物,尾气通过引风系统,适当处理提纯后作为原料重复利用;(4) The carbon black particles obtained after the reaction are separated with the argon gas through the collection system such as the cyclone separator and the bag collector, and enter the collection device, and the product is obtained after cooling. The tail gas passes through the induced draft system, and is used as a raw material after proper treatment and purification reuse;
(5)收集到的炭黑颗粒为黑色纳米粉末,呈球形团聚状,直径50-100 nm。形貌如图2所示。(5) The collected carbon black particles are black nano-powder in the form of spherical agglomerates with a diameter of 50-100 nm. The morphology is shown in Figure 2.
实施例2Example 2
利用交流组合等离子体制备石墨烯的方法,具体步骤如下:Utilize the method for preparing graphene by alternating current combination plasma, concrete steps are as follows:
(1)开启真空泵,调整等离子体区域压力为60 kPa,开启等离子体电极气冷装置,设置为60 L/min,开启质量流量计,开启漏电保护装置;(1) Turn on the vacuum pump, adjust the pressure in the plasma area to 60 kPa, turn on the plasma electrode air cooling device, set it to 60 L/min, turn on the mass flow meter, and turn on the leakage protection device;
(2)将氩气及氦气通入等离子体反应区域内,通过转子流量计及质量流量计调整流量分别为100 L/min及10 L/min,开启高频交流电源后裂解形成旋转滑动电弧等离子体,初步电离的氩气在三相交流电源作用下,形成稳定的三相交流电弧等离子体;(2) Pass argon and helium into the plasma reaction area, adjust the flow rate to 100 L/min and 10 L/min through the rotameter and mass flow meter respectively, turn on the high-frequency AC power supply and crack to form a rotating sliding arc Plasma, the initially ionized argon gas forms a stable three-phase AC arc plasma under the action of a three-phase AC power supply;
(3)将甲烷及氢气通入等离子体发生器与下行流化床,通过转子流量计及质量流量计调整流量分别为10 L/min及2 L/min,穿过组合等离子体区域,甲烷及氢气发生裂解后,进入下行流化床,自由基继续成核、生长;(3) Feed methane and hydrogen into the plasma generator and the downward fluidized bed, adjust the flow rates to 10 L/min and 2 L/min respectively through the rotameter and mass flow meter, pass through the combined plasma area, methane and After the hydrogen is cracked, it enters the downward fluidized bed, and the free radicals continue to nucleate and grow;
(4)反应后得到石墨烯片层随着氩气及氦气通过旋风分离器和布袋收集器等收集系统,被分离而进入收集装置中,冷却后得到产物,尾气通过引风系统,适当处理提纯后作为原料重复利用;(4) After the reaction, the graphene sheet is obtained, along with the argon and helium through the collection system such as the cyclone separator and the bag collector, and is separated and enters the collection device, and the product is obtained after cooling, and the tail gas is properly treated through the induced draft system Purified and reused as raw materials;
(5)收集到的石墨烯为黑色纳米粉末,呈现薄片状,直径100-300 nm。形貌如图3所示。(5) The collected graphene is black nano-powder in flake shape with a diameter of 100-300 nm. The morphology is shown in Figure 3.
实施例3Example 3
利用交流组合等离子体制备氮掺杂石墨烯的方法,具体步骤如下:The method for preparing nitrogen-doped graphene by alternating current combined plasma, the specific steps are as follows:
(1)开启真空泵,调整等离子体区域压力为50 kPa,开启等离子体电极气冷装置,设置为60 L/min,开启质量流量计,开启漏电保护装置;(1) Turn on the vacuum pump, adjust the pressure in the plasma area to 50 kPa, turn on the plasma electrode air cooling device, set it to 60 L/min, turn on the mass flow meter, and turn on the leakage protection device;
(2)将氩气及氖气通入等离子体反应区域内,通过转子流量计及质量流量计调整流量分别为80 L/min及20 L/min,开启高频交流电源后裂解形成旋转滑动电弧等离子体,初步电离的氩气及氖气在三相交流电源作用下,形成稳定的三相交流电弧等离子体;(2) Pass argon gas and neon gas into the plasma reaction area, adjust the flow rate to 80 L/min and 20 L/min respectively through the rotameter and mass flow meter, turn on the high-frequency AC power supply and crack to form a rotating sliding arc Plasma, the initially ionized argon and neon gas form a stable three-phase AC arc plasma under the action of a three-phase AC power supply;
(3)将甲烷及氮气通入等离子体发生器与下行流化床,通过转子流量计及质量流量计调整流量分别为5 L/min及15 L/min,穿过组合等离子体区域,甲烷及氮气发生裂解后,进入下行流化床,自由基继续成核、生长;(3) Feed methane and nitrogen into the plasma generator and the downward fluidized bed, adjust the flow rates to 5 L/min and 15 L/min respectively through the rotameter and mass flow meter, pass through the combined plasma area, methane and After the nitrogen is cracked, it enters the descending fluidized bed, and the free radicals continue to nucleate and grow;
(4)反应后得到氮掺杂石墨烯片层随着氩气及氖气通过多级旋风分离器和布袋收集器等收集系统,被分离而进入收集装置中,冷却后得到产物,尾气通过引风系统,适当处理提纯后作为原料重复利用;(4) After the reaction, the nitrogen-doped graphene sheet is obtained. As the argon and neon gas pass through the collection system such as the multi-stage cyclone separator and the bag collector, they are separated and enter the collection device. After cooling, the product is obtained. Wind system, after proper treatment and purification, it can be reused as raw material;
(5)收集到的氮掺杂石墨烯为黑色纳米粉末,呈现薄片状,直径100-200 nm。形貌如图4所示。(5) The collected nitrogen-doped graphene is a black nano-powder in the form of flakes with a diameter of 100-200 nm. The morphology is shown in Figure 4.
对比例1Comparative example 1
利用交流组合等离子体制备氮掺杂石墨烯的方法,具体步骤如下:The method for preparing nitrogen-doped graphene by alternating current combined plasma, the specific steps are as follows:
(1)开启引风机,等离子体区域压力为常压,开启等离子体电极气冷装置,设置为60 L/min,开启质量流量计,开启漏电保护装置;(1) Turn on the induced draft fan, the pressure in the plasma area is normal pressure, turn on the plasma electrode air cooling device, set it to 60 L/min, turn on the mass flow meter, and turn on the leakage protection device;
(2)将氩气及氖气通入等离子体反应区域内,通过转子流量计及质量流量计调整流量分别为80 L/min及20 L/min,开启高频交流电源后裂解形成旋转滑动电弧等离子体,初步电离的氩气及氖气在三相交流电源作用下,形成三相交流电弧等离子体;(2) Pass argon gas and neon gas into the plasma reaction area, adjust the flow rate to 80 L/min and 20 L/min respectively through the rotameter and mass flow meter, turn on the high-frequency AC power supply and crack to form a rotating sliding arc Plasma, the primary ionized argon and neon gas forms a three-phase AC arc plasma under the action of a three-phase AC power supply;
(3)将甲烷及氮气通入等离子体发生器与下行流化床,通过转子流量计及质量流量计调整流量分别为5 L/min及15 L/min,穿过组合等离子体区域,电弧熄灭,点火失败。(3) Feed methane and nitrogen into the plasma generator and the descending fluidized bed, adjust the flow rates to 5 L/min and 15 L/min respectively through the rotameter and mass flow meter, pass through the combined plasma area, and the arc is extinguished , ignition failure.
对比例2Comparative example 2
利用交流组合等离子体制备氮掺杂石墨烯的方法,具体步骤如下:The method for preparing nitrogen-doped graphene by alternating current combined plasma, the specific steps are as follows:
(1)开启真空泵,调整等离子体区域压力为50 kPa,开启等离子体电极气冷装置,设置为60 L/min,开启质量流量计,开启漏电保护装置;(1) Turn on the vacuum pump, adjust the pressure in the plasma area to 50 kPa, turn on the plasma electrode air cooling device, set it to 60 L/min, turn on the mass flow meter, and turn on the leakage protection device;
(2)将氩气及氖气通入等离子体反应区域内,通过转子流量计及质量流量计调整流量分别为80 L/min及20 L/min,开启高频交流电源后裂解形成旋转滑动电弧等离子体,初步电离的氩气及氖气在三相交流电源作用下,形成三相交流电弧等离子体;(2) Pass argon gas and neon gas into the plasma reaction area, adjust the flow rate to 80 L/min and 20 L/min respectively through the rotameter and mass flow meter, turn on the high-frequency AC power supply and crack to form a rotating sliding arc Plasma, the primary ionized argon and neon gas forms a three-phase AC arc plasma under the action of a three-phase AC power supply;
(3)将甲烷及氮气通入等离子体发生器与下行流化床,通过转子流量计及质量流量计调整流量分别为5 L/min及15 L/min,穿过组合等离子体区域,甲烷及氮气发生裂解后直接进入收集装置中,冷却后得到产物,最终将气体与氮掺杂石墨烯片层分离;(3) Feed methane and nitrogen into the plasma generator and the downward fluidized bed, adjust the flow rates to 5 L/min and 15 L/min respectively through the rotameter and mass flow meter, pass through the combined plasma area, methane and After the nitrogen is cracked, it directly enters the collection device, and the product is obtained after cooling, and finally the gas is separated from the nitrogen-doped graphene sheet;
(4)产物直接进入收集装置相较于经过下行流化床后进入收集装置产量下降50%-70 %。(4) The output of the product directly entering the collection device is 50%-70% lower than that of the product entering the collection device after passing through the downward fluidized bed.
本发明的优点在于:The advantages of the present invention are:
(1)本发明可以制备出在实际研究领域、工业应用下具有高价值的纳米材料,并且能够对其形貌结构进行调控;在负压条件下通过交流组合等离子体制备炭黑颗粒,石墨烯片层、氮掺杂石墨烯片层、氮化硅颗粒,产物分离回收便捷,工艺流程简单,无需催化剂及衬底,成本低廉,绿色环保,适用于连续大规模制备纳米材料;可以进行负压操作,提高气体流速从而提高单位时间处理量,增大产率;(1) The present invention can prepare nanomaterials with high value in practical research fields and industrial applications, and can regulate their morphology and structure; under negative pressure conditions, carbon black particles, graphene Sheets, nitrogen-doped graphene sheets, silicon nitride particles, convenient separation and recovery of products, simple process, no need for catalysts and substrates, low cost, green and environmentally friendly, suitable for continuous large-scale preparation of nanomaterials; negative pressure can be carried out Operation, increase the gas flow rate to increase the processing capacity per unit time and increase the production rate;
(2)本发明可以制备出导电炭黑、小片径石墨烯,堆积成葡萄状结构,层数为2-6层;产物中导电炭黑与石墨烯形成一维和二维结构组合导电性增强,可以利用氮气、氨气、硅烷气体反应物无需固态催化剂直接一步合成氮掺杂石墨烯、氮化硅;(2) The present invention can prepare conductive carbon black and small-diameter graphene, which are piled up into a grape-like structure with a layer number of 2-6 layers; the conductive carbon black and graphene in the product form a one-dimensional and two-dimensional structure combination to enhance conductivity, Nitrogen-doped graphene and silicon nitride can be directly synthesized in one step by using nitrogen, ammonia, and silane gas reactants without solid-state catalysts;
(3)本发明相较于其它等离子体方式,效率较高,处理量大,减少电能消耗;通过交流组合等离子体方式既提高了纳米材料的合成效率,又增大了放电间隙,减少了电极间的积碳,能够形成并扩大稳定的等离子体区域达到长时间大规模合成的效果;(3) Compared with other plasma methods, the present invention has higher efficiency, larger processing capacity, and reduced power consumption; the combined AC plasma method not only improves the synthesis efficiency of nanomaterials, but also increases the discharge gap and reduces the electrode The carbon deposition between them can form and expand a stable plasma area to achieve the effect of long-term large-scale synthesis;
(4)本发明利用交流组合等离子体与下行流化床相结合,增加了反应时间,使自由基充分成核、生长,提高纳米材料的产率。(4) The present invention combines the AC combined plasma with the down-flowing fluidized bed to increase the reaction time, fully nucleate and grow free radicals, and increase the yield of nanomaterials.
本发明如果公开或涉及了互相固定连接的零部件或结构件,那么,除另有声明外,固定连接可以理解为:能够拆卸地固定连接( 例如使用螺栓或螺钉连接),也可以理解为:不可拆卸的固定连接(例如铆接、焊接),当然,互相固定连接也可以为一体式结构( 例如使用铸造工艺一体成形制造出来) 所取代(明显无法采用一体成形工艺除外)。If the present invention discloses or relates to parts or structural parts that are fixedly connected to each other, then, unless otherwise stated, the fixed connection can be understood as: a detachable fixed connection (for example, using bolts or screws), or it can also be understood as: Non-detachable fixed connection (such as riveting, welding), of course, the mutual fixed connection can also be replaced by an integrated structure (such as manufactured by integral forming by casting process) (except that the integral forming process cannot be used obviously).
另外,上述本发明公开的任一技术方案中所应用的用于表示位置关系或形状的术语除另有声明外其含义包括与其近似、类似或接近的状态或形状。In addition, unless otherwise stated, the terms used in any of the technical solutions disclosed in the present invention to indicate positional relationships or shapes include states or shapes that are similar, similar or close to them.
本发明提供的任一部件既可以是由多个单独的组成部分组装而成,也可以为一体成形工艺制造出来的单独部件。Any component provided by the present invention can be assembled from multiple individual components, or can be a single component manufactured by integral forming process.
最后应当说明的是:以上实施例仅用以说明本发明的技术方案而非对其限制;尽管参照较佳实施例对本发明进行了详细的说明,所属领域的普通技术人员应当理解:依然可以对本发明的具体实施方式进行修改或者对部分技术特征进行等同替换;而不脱离本发明技术方案的精神,其均应涵盖在本发明请求保护的技术方案范围当中。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them; although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that: the present invention can still be Modifications to the specific implementation of the invention or equivalent replacement of some technical features; without departing from the spirit of the technical solution of the present invention, should be included in the scope of the technical solution claimed in the present invention.
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105017815A (en) * | 2015-06-04 | 2015-11-04 | 苏州纳康纳米材料有限公司 | Low-cost and highly-conductive nano-carbon material preparation method |
US20170113935A1 (en) * | 2014-06-13 | 2017-04-27 | Fgv Cambridge Nanosystems Limited | Apparatus and method for plasma synthesis of graphitic products including graphene |
CN108557809A (en) * | 2018-07-26 | 2018-09-21 | 福州大学 | A kind of graphene preparation method |
CN108684131A (en) * | 2018-03-29 | 2018-10-19 | 大连理工大学 | High-frequency ac rotational slide arc discharging plasma generating system for methane dry reforming |
CN109534324A (en) * | 2018-11-25 | 2019-03-29 | 合肥碳艺科技有限公司 | A method of using magnetic rotation arc system for graphene |
CN216217684U (en) * | 2021-10-27 | 2022-04-05 | 福州大学 | Sliding arc plasma device |
-
2023
- 2023-03-29 CN CN202310314794.8A patent/CN116281975B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170113935A1 (en) * | 2014-06-13 | 2017-04-27 | Fgv Cambridge Nanosystems Limited | Apparatus and method for plasma synthesis of graphitic products including graphene |
CN105017815A (en) * | 2015-06-04 | 2015-11-04 | 苏州纳康纳米材料有限公司 | Low-cost and highly-conductive nano-carbon material preparation method |
CN108684131A (en) * | 2018-03-29 | 2018-10-19 | 大连理工大学 | High-frequency ac rotational slide arc discharging plasma generating system for methane dry reforming |
CN108557809A (en) * | 2018-07-26 | 2018-09-21 | 福州大学 | A kind of graphene preparation method |
CN109534324A (en) * | 2018-11-25 | 2019-03-29 | 合肥碳艺科技有限公司 | A method of using magnetic rotation arc system for graphene |
CN216217684U (en) * | 2021-10-27 | 2022-04-05 | 福州大学 | Sliding arc plasma device |
Non-Patent Citations (1)
Title |
---|
王烽: "《等离子体纳米炭黑的制备及对聚合物的改性研究》", 《中国博士学位论文全文数据库 工程科技Ⅰ辑》, 15 April 2019 (2019-04-15), pages 015 - 23 * |
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