CN116262304A - Method for preparing device structure based on laser etching process - Google Patents

Method for preparing device structure based on laser etching process Download PDF

Info

Publication number
CN116262304A
CN116262304A CN202111530777.5A CN202111530777A CN116262304A CN 116262304 A CN116262304 A CN 116262304A CN 202111530777 A CN202111530777 A CN 202111530777A CN 116262304 A CN116262304 A CN 116262304A
Authority
CN
China
Prior art keywords
laser
device structure
beams
sub
etching process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111530777.5A
Other languages
Chinese (zh)
Inventor
王白银
余明斌
汪巍
涂芝娟
杜晓阳
陈旭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Industrial Utechnology Research Institute
Original Assignee
Shanghai Industrial Utechnology Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Industrial Utechnology Research Institute filed Critical Shanghai Industrial Utechnology Research Institute
Priority to CN202111530777.5A priority Critical patent/CN116262304A/en
Publication of CN116262304A publication Critical patent/CN116262304A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00634—Processes for shaping materials not provided for in groups B81C1/00444 - B81C1/00626
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The invention provides a preparation method of a device structure based on a laser etching process, which comprises the following steps: 1) Dividing the focused laser parent beams into a plurality of laser sub-beams, and equally arranging the laser sub-beams; 2) Providing a control module, wherein the control module can independently control each laser sub-beam; 3) Acquiring actual positions of laser sub-beams by a laser mark alignment method, so as to establish coordinate layers corresponding to the actual positions of the laser sub-beams one by one in a control module; 4) And controlling each sub-laser to carry out laser etching on the target substrate by a control module based on the coordinate layer so as to form a required device structure. The invention can achieve the purpose of accurately etching optical waveguides in different positions and different shapes under the maskless state by controlling multiple laser beams, thereby greatly reducing the cost and improving the etching rate; by changing the laser type and energy, the precise etching of the optical waveguides with different depths can be realized.

Description

Method for preparing device structure based on laser etching process
Technical Field
The invention belongs to the field of semiconductor integrated circuit design and manufacture, and particularly relates to a preparation method of a device structure based on a laser etching process.
Background
In integrated optical circuits, optical waveguides are the most fundamental component. The common optical waveguide etching method comprises the following steps: photolithography, plasma etching, electron beam etching, laser etching, and the like. The laser etching has the advantages of no contact, high flexibility degree, high processing speed, small heat affected zone, capability of focusing on tiny light spots of laser wavelength level and the like, can obtain good dimensional accuracy and processing quality, and is widely applied to the fields with higher requirements on processing accuracy and process control, such as solar cells, electronic semiconductor materials and the like, and the market demand of related processing equipment is increased rapidly.
The silicon optical chip has the characteristics of high operation speed, low power consumption, low time delay and the like, and because of the special physical property of light, the photonic chip has no strict requirements on the structure as an electronic chip, so the optical chip does not require a 28nm or even 7nm high-precision process line, but has more strict requirements on the stability and consistency of the process. With the development of silicon photoelectron technology, the conventional photoetching technology cannot meet the requirements of the etching technology on sidewall roughness, steepness and high aspect ratio, and with the development of the technology, the number of required photomasks is increased linearly, so that the technology cost is higher and higher.
It should be noted that the foregoing description of the background art is only for the purpose of facilitating a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background section of the present application.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a method for manufacturing a device structure based on a laser etching process, which is used for solving the problems of rough etching sidewall and high cost of a semiconductor device in the prior art.
To achieve the above and other related objects, the present invention provides a method for manufacturing a device structure based on a laser etching process, the method comprising: 1) After focusing each of a plurality of laser mother beams, equally dividing each laser mother beam into a plurality of laser sub-beams, and equally arranging the plurality of laser sub-beams; 2) Providing a control module for independently controlling each laser sub-beam; 3) Acquiring actual positions of the laser sub-beams through a laser mark alignment method, and transmitting the actual positions to the control module so as to establish coordinate layers corresponding to the actual positions of the laser sub-beams one by one in the control module; 4) And controlling each sub-laser to carry out laser etching on a target substrate by the control module based on the coordinate graph layer so as to form a required device structure on the target substrate.
Optionally, the laser in step 1) includes one or more of a femtosecond laser, a pulse laser, a laser plasma, and an excimer laser.
Optionally, in step 1), the laser mother beam is equally divided into a plurality of equally arranged laser sub-beams by a laser beam splitter, and a switch is arranged in each laser sub-beam channel, and the switch is connected with the control module and controlled by the control module.
Optionally, the diameter of the laser sub-beams after the halving treatment in the step 1) is 10-50 nanometers.
Optionally, the pitch between the laser sub-beams arranged at medium pitch in step 1) is 60-100 nm.
Optionally, the diameter of the overall arrangement dimension of the plurality of laser sub-beams in step 1) is greater than or equal to the dimension of the desired etched area of the target substrate.
Optionally, the parameters of each of the laser sub-beams in step 2) that can be controlled independently include a laser switch, a laser energy level, and a laser irradiation time.
Optionally, in step 4), the laser energy and the laser irradiation time in the vacuum environment are adjusted by the control module to control the etching size and depth of the laser etching, so as to form a required device structure on the target substrate.
Alternatively, the independent control of each of said laser sub-beams in step 2) is implemented by a system on chip or a computer program.
Optionally, the laser marking alignment method in step 3) includes: and providing a feedback structure, forming marks on the feedback structure after the laser sub-beams are started, and feeding back the positions of the marks to the control module so as to establish coordinate layers corresponding to the actual positions of the laser sub-beams one by one in the control module.
Optionally, the target substrate in step 4) comprises a stack of one or more of silicon dioxide, silicon nitride, monocrystalline silicon, polycrystalline silicon, and a polymer.
Optionally, in step 4), after each laser sub-beam is accurately aligned with the target substrate by the alignment mechanism, the control module controls the step array, so as to control the laser etching of the whole device structure of the target substrate.
Optionally, in step 4), a minimum critical dimension of the device structure formed by the laser etching is greater than or equal to 200 nm.
Optionally, step 5) is further included, the target substrate is cleaned to remove impurities formed by laser etching, and the cleaning process includes one or a combination of a wet cleaning process and a dry cleaning process.
Optionally, the device structure includes one of an optical waveguide structure and a MEMS device structure.
As described above, the method for manufacturing a device structure based on a laser etching process of the present invention has the following beneficial effects:
according to the preparation method of the device structure based on the laser etching process, provided by the invention, the purpose of accurately etching optical waveguides in different positions and different shapes can be achieved by controlling multiple laser beams in a maskless state, so that the cost can be greatly reduced, and the etching rate can be improved; by changing the laser type and energy, the precise etching of the optical waveguides with different depths can be realized, and the method can be widely applied to the fields of optical waveguide etching, photoetching, silicon optical subsequent metal etching and the like. The invention can be widely applied to photoetching of integrated optical paths and research and development of back-end metal etching processes of MEMS products.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is apparent that the drawings in the following description are only some of the embodiments of the present application.
Fig. 1 is a schematic flow chart of steps of a method for manufacturing a device structure based on a laser etching process according to an embodiment of the invention.
Fig. 2 is a schematic diagram of an arrangement manner of laser sub-beams in a method for manufacturing a device structure based on a laser etching process according to an embodiment of the present invention.
Description of element reference numerals
101. Laser sub-beam
S11-S15 steps 1) to 5)
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
It should be emphasized that the term "comprises/comprising" when used herein is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments in combination with or instead of the features of the other embodiments.
As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.
In the context of this application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
As shown in fig. 1 to 2, the present embodiment provides a method for manufacturing a device structure based on a laser etching process, where the method includes:
as shown in fig. 1 to 2, step 1) S11 is first performed, a plurality of laser mother beams are focused, each of the laser mother beams is equally divided into a plurality of laser sub-beams 101, and the plurality of laser sub-beams 101 are equally arranged.
In one embodiment, the laser in step 1) comprises one or more of a femtosecond laser, a pulsed laser, a laser plasma, and an excimer laser. In this embodiment, the laser is selected to be a femtosecond laser,
in one embodiment, as shown in fig. 2, in step 1), the laser mother beam is equally divided into a plurality of equally arranged laser sub-beams 101 by a laser beam splitter, and a switch is disposed in a channel of each laser sub-beam 101, and the switch is connected to and controlled by the control module. The laser beam splitter may be one of a refractive laser beam splitter and a diffractive laser beam splitter, the refractive laser beam splitter may be a micro lens laser beam splitter, a micro prism laser beam splitter, a refractive beam splitting facula device for gaussian beam input, and the diffractive laser beam splitter may be an amplitude type laser beam splitter, a pure phase type laser beam splitter, a complex amplitude laser beam splitter, and the like.
In one embodiment, the diameter of the laser sub-beam 101 after the halving treatment in step 1) is 10 to 50 nm. For example, the diameter of the laser sub-beam 101 may be 10 nm, 20 nm, 30 nm, 50 nm, etc., and is not limited to the above-listed examples.
In one embodiment, the pitch between the laser sub-beams 101 arranged at medium pitch in step 1) is 60 to 100 nm. For example, the pitch between the laser sub-beams 101 may be 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or the like, and is not limited to the above-listed examples.
In one embodiment, the diameter of the overall arrangement size of the multiple laser sub-beams 101 in step 1) is greater than or equal to the size of the area to be etched on the target substrate, for example, for a 12 inch wafer, the diameter of the area to be etched is 11.5 inches, and then the diameter of the overall arrangement size of the multiple laser sub-beams 101 may be 11.5 inches or 12 inches, etc., so as to cover the area to be etched at a time, thereby improving the efficiency of subsequent etching.
As shown in fig. 1, step 2) S12 is then performed, and a control module is provided, where the control module is connected to each of the laser sub-beams 101, so that each of the laser sub-beams 101 can be controlled independently.
In one embodiment, the parameters that can be controlled independently in step 2) of each of the laser sub-beams 101 include a laser switch, a laser energy level, and a laser irradiation time, wherein the laser irradiation time can be controlled by the time of turning on and off the laser.
In an embodiment, the independent control of each of said laser sub-beams 101 in step 2) is implemented by a system on chip or a computer program.
As shown in fig. 1, step 3) S13 is performed, and the control module obtains the actual positions of the laser sub-beams 101 by using a laser mark alignment method, so as to establish a coordinate layer corresponding to the actual positions of the laser sub-beams 101 one by one in the control module.
In one embodiment, the laser marking alignment method in step 3) includes: providing a feedback structure, after forming marks on the feedback structure after each laser sub-beam 101 is started, feeding back the positions of each mark to the control module, so as to establish a coordinate layer corresponding to the actual positions of each laser sub-beam 101 one by one in the control module, specifically, the coordinate layer and the positions of each laser sub-beam 101 are in one-to-one correspondence, the actual positions of the laser sub-beams 101 can be accurately represented through the coordinate layer, meanwhile, the control module converts the programming operation of the laser sub-beam points on the coordinate layer into operation signals to control the actual operation of the laser sub-beams 101, and the operation signals can be displayed through a display screen and the like, so that the programming operation of laser etching by workers is facilitated.
As shown in fig. 1, step 4) S14 is then performed, and based on the coordinate layer, the control module controls each sub-laser to perform laser etching on the target substrate, so as to form a required device structure on the target substrate.
In one embodiment, in step 4), the laser energy and the laser irradiation time in the vacuum environment are adjusted by the control module to control the etching dimension and depth of the laser etching, so as to form the required device structure on the target substrate. For example, for a laser of the same energy level, the longer the irradiation time, the greater the depth of etching and vice versa. For another example, for the same laser irradiation time, the larger the laser energy is, the larger the etching size is, and the larger the etching depth is, otherwise, the smaller the etching depth is, and the etching size and the etching depth of the final laser etching can be accurately controlled through the principle.
In one embodiment, the target substrate may be etched by turning on the pulsed laser sub-beam 101 of the pattern area to be etched, turning off the pulsed laser sub-beam 101 of the non-pattern area not to be etched, and adjusting the energy and irradiation time of the pulsed laser sub-beam 101 of the pattern area under a vacuum environment.
In one embodiment, the target substrate in step 4) comprises a stack of one or more of silicon dioxide, silicon nitride, single crystal silicon, polysilicon, and polymers. For example, the target substrate may be an SOI substrate formed by depositing a buried oxide layer, which may have a thickness of 2 microns, and a top silicon layer, which may have a thickness of 220 nanometers, on a silicon substrate, respectively.
In one embodiment, in step 4), after each laser sub-beam 101 is precisely aligned with the target substrate by the alignment mechanism, the control module controls the step array, so as to control the laser etching of the whole device structure of the target substrate. For example, the step array may be disposed at the bottom of the target substrate to control the step movement of the target substrate, or may be disposed above the laser sub-beams 101 to control the step movement of each laser sub-beam 101. Meanwhile, the stepping direction is determined according to a device structure formed by etching, and the stepping direction (such as coordinates and the like), the energy of laser sub-beams, etching time and the like can be written into a control module so as to realize mass production of products.
In one embodiment, the minimum critical dimension of the device structure formed by the laser etching in step 4) is greater than or equal to 200 nm.
In one embodiment, the device structure includes one of an optical waveguide structure and a MEMS device structure.
In one embodiment, the laser etched depth is between 50 nanometers and 150 nanometers. And, the etched device structure is vertical and smooth sidewalls.
As shown in fig. 1, finally, step 5) S15 is performed to clean the target substrate to remove impurities formed by laser etching, where the cleaning process includes one or a combination of a wet cleaning process and a dry cleaning process.
As described above, the method for manufacturing a device structure based on a laser etching process of the present invention has the following beneficial effects:
according to the preparation method of the device structure based on the laser etching process, provided by the invention, the purpose of accurately etching optical waveguides in different positions and different shapes can be achieved by controlling multiple laser beams in a maskless state, so that the cost can be greatly reduced, and the etching rate can be improved; by changing the laser type and energy, the precise etching of the optical waveguides with different depths can be realized, and the method can be widely applied to the fields of optical waveguide etching, photoetching, silicon optical subsequent metal etching and the like. The invention can be widely applied to photoetching of integrated optical paths and research and development of back-end metal etching processes of MEMS products. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (15)

1. The preparation method of the device structure based on the laser etching process is characterized by comprising the following steps of:
1) After focusing each of a plurality of laser mother beams, equally dividing each laser mother beam into a plurality of laser sub-beams, and equally arranging the plurality of laser sub-beams;
2) Providing a control module for independently controlling each laser sub-beam;
3) Acquiring actual positions of the laser sub-beams through a laser mark alignment method, and transmitting the actual positions to the control module so as to establish coordinate layers corresponding to the actual positions of the laser sub-beams one by one in the control module;
4) And controlling each sub-laser to carry out laser etching on a target substrate by the control module based on the coordinate graph layer so as to form a required device structure on the target substrate.
2. The method for manufacturing a device structure based on a laser etching process according to claim 1, wherein: the laser in the step 1) comprises one or more of femtosecond laser, pulse laser, laser plasma and excimer laser.
3. The method for manufacturing a device structure based on a laser etching process according to claim 1, wherein: in the step 1), the laser mother beam is equally divided into a plurality of laser sub beams which are equidistantly arranged through a laser beam splitter, a switch is arranged in each laser sub beam channel, and the switch is connected with and controlled by the control module.
4. The method for manufacturing a device structure based on a laser etching process according to claim 1, wherein: the diameter of the laser sub-beams after the halving treatment in the step 1) is 10-50 nanometers.
5. The method for manufacturing a device structure based on a laser etching process according to claim 1, wherein: the interval between the laser sub-beams arranged in the medium distance in the step 1) is 60-100 nanometers.
6. The method for manufacturing a device structure based on a laser etching process according to claim 1, wherein: the diameter of the overall arrangement size of the plurality of laser sub-beams in the step 1) is larger than or equal to the size of the etching area required by the target substrate.
7. The method for manufacturing a device structure based on a laser etching process according to claim 1, wherein: the parameters of each laser sub-beam in the step 2) which can be controlled independently comprise a laser switch, laser energy and laser irradiation time.
8. The method for manufacturing a device structure based on a laser etching process according to claim 7, wherein: and 4) adjusting the laser energy and the laser irradiation time in a vacuum environment through the control module so as to control the etching size and the depth of the laser etching, thereby forming a required device structure on the target substrate.
9. The method for manufacturing a device structure based on a laser etching process according to claim 1, wherein: the independent control of each of said laser sub-beams in step 2) is implemented by a system on chip or a computer program.
10. The method for manufacturing a device structure based on a laser etching process according to claim 1, wherein: the laser marking alignment method in the step 3) comprises the following steps: and providing a feedback structure, forming marks on the feedback structure after the laser sub-beams are started, and feeding back the positions of the marks to the control module so as to establish coordinate layers corresponding to the actual positions of the laser sub-beams one by one in the control module.
11. The method for manufacturing a device structure based on a laser etching process according to claim 1, wherein: the target substrate in step 4) comprises a stack of one or more of silicon dioxide, silicon nitride, monocrystalline silicon, polycrystalline silicon, and a polymer.
12. The method for manufacturing a device structure based on a laser etching process according to claim 1, wherein: in the step 4), after each laser sub-beam is accurately aligned with the target substrate through the alignment mechanism, the control module controls the step array, and then laser etching of the whole device structure of the target substrate is controlled.
13. The method for manufacturing a device structure based on a laser etching process according to claim 1, wherein: and 4) the minimum critical dimension of the device structure formed by the laser etching is greater than or equal to 200 nanometers.
14. The method for manufacturing a device structure based on a laser etching process according to claim 1, wherein: and 5) cleaning the target substrate to remove impurities formed by laser etching, wherein the cleaning process comprises one or a combination of a wet cleaning process and a dry cleaning process.
15. The method for manufacturing a device structure based on a laser etching process according to claim 1, wherein: the device structure includes one of an optical waveguide structure and a MEMS device structure.
CN202111530777.5A 2021-12-14 2021-12-14 Method for preparing device structure based on laser etching process Pending CN116262304A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111530777.5A CN116262304A (en) 2021-12-14 2021-12-14 Method for preparing device structure based on laser etching process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111530777.5A CN116262304A (en) 2021-12-14 2021-12-14 Method for preparing device structure based on laser etching process

Publications (1)

Publication Number Publication Date
CN116262304A true CN116262304A (en) 2023-06-16

Family

ID=86723393

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111530777.5A Pending CN116262304A (en) 2021-12-14 2021-12-14 Method for preparing device structure based on laser etching process

Country Status (1)

Country Link
CN (1) CN116262304A (en)

Similar Documents

Publication Publication Date Title
CN100474518C (en) Method for machining substrate and method for manufacturing element
JP4336246B2 (en) Method for producing polycrystalline silicon
JP2004223586A (en) Method for processing transparent material inside
US10761334B2 (en) System and method for optimally forming gratings of diffracted optical elements
KR19990072767A (en) Method and apparatus for machining an electrically conductive film
JP2004311906A (en) Laser processing device and laser processing method
CN104577709A (en) Adjustable spatial filter for laser scribing apparatus
CN104597724A (en) Method for processing nano-scale fine pattern
JP2002316835A (en) Glass substrate and method for flattening glass substrate
CN113629374B (en) Method for preparing millimeter wave chip cavity device based on metal-assisted chemical etching
JPH0389518A (en) Laser beam machining method
US20050191771A1 (en) Ultrafast laser direct writing method for modifying existing microstructures on a submicron scale
CN116262304A (en) Method for preparing device structure based on laser etching process
US11402649B2 (en) System and method for optimally forming gratings of diffracted optical elements
CN111999786A (en) Hemispherical lens with opaque film covering spherical center and preparation method thereof
CN110508932A (en) Method of the femtosecond laser wet etching in gallium nitride surface processing micro structure array
JPH05136460A (en) Formation of microlens
JP2009231324A (en) Stencil mask and method of manufacturing the same
JPH081810A (en) Microlens formed by isotropic etching
JP2011180166A (en) Method of manufacturing silicon thin line optical waveguide
CN102540747A (en) Exposure method for three-dimensional mask of projection type photoetching machine
JP2001223145A (en) Semiconductor wafer carrying dot mark having special shape and method for forming dot mark
CN217062019U (en) Laser confocal patterning etching equipment
KR20050088064A (en) Fabrication method of microlens array
CN113805438B (en) Deep ultraviolet micro projection photoetching parallel manufacturing system and method adopting single-step method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination