CN116254598A - Wafer-level epitaxial film and preparation method thereof - Google Patents

Wafer-level epitaxial film and preparation method thereof Download PDF

Info

Publication number
CN116254598A
CN116254598A CN202310404521.2A CN202310404521A CN116254598A CN 116254598 A CN116254598 A CN 116254598A CN 202310404521 A CN202310404521 A CN 202310404521A CN 116254598 A CN116254598 A CN 116254598A
Authority
CN
China
Prior art keywords
source
doping
pulse
film
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310404521.2A
Other languages
Chinese (zh)
Inventor
张易军
王虹
任巍
叶作光
王瑞康
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Jiaotong University
Original Assignee
Xian Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Jiaotong University filed Critical Xian Jiaotong University
Priority to CN202310404521.2A priority Critical patent/CN116254598A/en
Publication of CN116254598A publication Critical patent/CN116254598A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/18—Quartz
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention belongs to the technical field of semiconductor material films, and discloses a wafer-level epitaxial film and a preparation method thereof. The preparation method of the doped heteroepitaxial film comprises the following steps: placing the substrate into a vacuum reaction chamber of an atomic layer deposition device, and heating toPresetting a temperature, and performing functionalization treatment on the substrate by adopting an M source; sequentially pulsing the source A and the source M into the vacuum reaction cavity, and repeating the pulse source A and the pulse source M; then pulse the precursor source of the doping atoms, the M source: sequentially pulsing the A source and the M source, and repeating the pulsing of the A source and the M source to obtain A x M y A thin film layer; repeating the above process; or sequentially pulsing the A source and the M source, and repeating the pulsing of the A source and the M source to obtain A x M y A film; and then annealing treatment is carried out to obtain the wafer-level epitaxial film. The doping concentration of the doping atoms is adjusted by adjusting the relative layers of the two molecular layers so as to realize the atomic layer doping of the doping elements in the film.

Description

Wafer-level epitaxial film and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductor material films, in particular to a wafer-level epitaxial film and a preparation method thereof.
Background
With the rapid development of modern industries such as electric automobiles, 5G, and universal interconnection, the demand of high-performance high-power semiconductor devices is increasingly urgent. The third generation wide bandgap semiconductor materials such as gallium nitride and the like have the advantages of high breakdown field strength, low material loss and the like, and have been widely studied on high-power devices, but the development of industrial application of gallium nitride power devices is severely limited because high-quality substrate materials are very expensive and are not suitable for large-scale production.
There are many methods for preparing gallium nitride films, such as molecular beam epitaxy, halogen vapor phase epitaxy, pulsed laser deposition, metal organic chemical vapor deposition, etc. The preparation methods of the films are high in required temperature, and the prepared films are not good enough in uniformity and cannot well show the performance of materials when devices are prepared. Compared with the methods, atomic layer deposition has great advantages in the aspects of precisely controlling the thickness of the film, uniformity of a large area and low-temperature film preparation. However, in the current atomic layer deposition process, crystal defects and other problems are easy to generate due to the problems of technological process and the like, so that the performance of the doped thin film device is seriously affected.
Disclosure of Invention
The invention aims to provide a wafer-level epitaxial film and a preparation method thereof, which solve the problems in the prior art.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a preparation method of a wafer-level epitaxial film, which comprises the following steps:
(1) Placing a substrate into a vacuum reaction cavity of atomic layer deposition equipment, heating to a preset temperature, and performing functionalization treatment on the substrate by adopting an M source;
(2) Sequentially pulsing A source and M source into the vacuum reaction cavity, and repeating the pulsing A source and M source to obtain A x M y A thin film layer; then pulse doping the precursor source and M source of atoms to obtain a doped atomic layer; sequentially pulsing the A source and the M source, and repeating the pulsing of the A source and the M source to obtain A x M y A thin film layer; repeating the above process as a cycle to obtain a film;
or pulse A source and M source in sequence into the vacuum reaction cavity, and repeat pulse A source and M source to obtain A x M y A film;
(3) To dope film or A x M y Annealing the film to obtain a wafer-level epitaxial nitride/oxide film;
in the step (2), A x M y Including one of gallium oxide, gallium nitride, aluminum nitride, hafnium oxide, and silicon oxide.
Preferably, in the method for preparing a wafer-level epitaxial thin film, the substrate in the step (1) is a silicon substrate or a sapphire substrate, the preset temperature in the step (1) is 150-500 ℃, the pressure in the vacuum reaction chamber in the step (1) is 500-1500 Pa, and the time of the functionalization treatment in the step (1) is 120-600 s.
Preferably, in the above method for preparing a wafer-level epitaxial thin film, A in the step (2) x M y When gallium oxide or gallium nitride is adopted, the source A is trimethyl gallium or triethyl gallium; a is that x M y When the source A is aluminum nitride, the source A is trimethylaluminum or triethylaluminum; a is that x M y In the case of hafnium oxide, the A source is hafnium tetra (dimethylamine) or hafnium tri (dimethylamino) cyclopentadienyl; a is that x M y In the case of silica, the A source is tris (dimethylamino) silane or bis (diethylamino) silane.
Preferably, in the above method for preparing a wafer-level epitaxial thin film, the M source in the step (2) is a nitrogen source or an oxygen source; the nitrogen source is N 2 Plasma, NH 3 Or NH 3 Plasma, the oxygen source is O 2 Plasma or ozone.
Preferably, in the above method for preparing a wafer-level epitaxial thin film, the doping atoms in the step (2) are silicon, nitrogen, sulfur, phosphorus, aluminum, copper, tin, titanium or tantalum, and when the doping atoms are silicon, the precursor source of the doping atoms is tris (dimethylamino) silane or bis (diethylamino) silane; when the doping atom is nitrogen, the precursor source of the doping atom is NH 3 The method comprises the steps of carrying out a first treatment on the surface of the When the doping atom is sulfur, the precursor source of the doping atom is H 2 S, S; when the doping atom is phosphorus, the precursor source of the doping atom is PH 3 Plasma, trimethylphosphine or triethylphosphine; when the doping atoms are aluminum, the precursor sources of the doping atoms are trimethylaluminum, triethylaluminum or dimethyl isopropoxyaluminum; when the doping atoms are copper, the precursor source of the doping atoms is bis (dimethylamine-2-propanol) copper; when the doping atoms are titanium, the precursor sources of the doping atoms are titanium tetraisopropoxide, tetraethoxytitanium or tetra (dimethylamino) titanium; when the doping atom is tantalum, the precursor source of the doping atom is ethoxy tantalum, penta (dimethylamino) tantalum or tri (diethylamino) tert-butyramide tantalum; when the doping atom is tin, the precursor source of the doping atom is tetra (dimethylamine) tin.
Preferably, in the method for preparing a wafer-level epitaxial film, the pulse time of the a source in the step (2) is independently 0.1 to 0.4s, the carrier gas flow rate of the a source is independently 100 to 300sccm, and the carrier gas of the a source is independently N 2 Or Ar; the pulse time of the precursor source of the doping atoms in the step (2) is 0.1-0.5 s, the carrier gas flow rate of the precursor source of the doping atoms is 100-300 sccm, and the carrier gas of the precursor source of the doping atoms is N 2 Or Ar; the pulse time of the M source in the step (2) is independently 3-60 s.
Preferably, in the above method for preparing a wafer-level epitaxial film, the steps are as followsDoping the film or A in step (2) x M y The total thickness of the film is independently 5-1000 nm.
Preferably, in the above method for preparing a wafer-level epitaxial film, the annealing condition in the step (3) is as follows: the temperature rising rate is 5-10 ℃/min, the temperature is 350-1100 ℃ and the time is 30-120 min.
The invention also provides the wafer-level epitaxial film prepared by the preparation method of the wafer-level epitaxial film.
Compared with the prior art, the invention has the following beneficial effects:
(1) The invention provides a method for growing high-quality heteroepitaxial oxide/nitride film capable of accurately regulating and controlling the concentration of doped atoms (such as Si) 2 ) The doping concentration of the doping atoms is adjusted by adjusting the relative layers of the two molecular layers so as to realize the atomic layer doping of the doping elements in the oxide/nitride film.
(2) The wafer-level atomic doped heteroepitaxial oxide/nitride film deposited by the atomic layer has excellent large-area uniformity and thickness controllability, high process repeatability and few defects.
(3) The lattice matching degree of the pure-phase gallium oxide film deposited by the atomic layer and the substrate is good, the prepared film is almost single-phase, the uniformity is very good, and the pure-phase gallium oxide films with different phases can be prepared under different deposition and annealing conditions.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
FIG. 1 is a process diagram of a thin film growth method of the present invention;
FIG. 2 is a process diagram of the film growth method in example 1;
FIG. 3 shows wafer level Si-doped beta-Ga for example 1 and example 2 2 O 3 XRD pattern of the film;
FIG. 4 is a wafer level α -Ga of example 4 2 O 3 XRD pattern of the film.
Detailed Description
The invention provides a preparation method of a wafer-level epitaxial film, which comprises the following steps:
(1) Placing a substrate into a vacuum reaction cavity of atomic layer deposition equipment, heating to a preset temperature, and performing functionalization treatment on the substrate by adopting an M source;
(2) Sequentially pulsing A source and M source into the vacuum reaction cavity, and repeating the pulsing A source and M source to obtain A x M y A thin film layer; then pulse doping the precursor source and M source of atoms to obtain a doped atomic layer; sequentially pulsing the A source and the M source, and repeating the pulsing of the A source and the M source to obtain A x M y A thin film layer; repeating the above process as a cycle to obtain a doped film;
or pulse A source and M source in sequence into the vacuum reaction cavity, and repeat pulse A source and M source to obtain A x M y A film;
(3) To dope film or A x M y And annealing the film to obtain the wafer-level epitaxial nitride/oxide film.
In the present invention, the substrate in the step (1) is preferably a silicon substrate or a sapphire substrate, more preferably a sapphire substrate.
In the present invention, the substrate in the step (1) further includes a pretreatment process, specifically: the method comprises the steps of firstly flushing a substrate by water, then placing the substrate into an acetone solution, carrying out oscillation cleaning on the substrate in an ultrasonic oscillator for 30min, then placing the substrate into water, carrying out oscillation cleaning on the substrate in the ultrasonic oscillator for 15min, finally carrying out ultrasonic cleaning on the substrate for 30s by using a 0.5% hydrofluoric acid solution, then flushing the substrate with water for 3min, and drying the substrate by using high-purity nitrogen.
In the present invention, the preset temperature in the step (1) is preferably 150 to 500 ℃, more preferably 225 to 450 ℃, and even more preferably 283 to 400 ℃; the pressure in the vacuum reaction chamber in the step (1) is preferably 500 to 1500Pa, more preferably 658 to 1255Pa, and even more preferably 725 to 1100Pa; the time for the functionalization treatment in the step (1) is preferably 120 to 600 seconds, more preferably 150 to 543 seconds, and still more preferably 246 to 425 seconds.
In the invention, the step (2) sequentially pulses the source A and the source M, and the specific process of repeating the source A and the source M is as follows: pulse a source A into a vacuum reaction cavity, then purge by adopting nitrogen or argon, pulse a source M, and repeat the process after purge by adopting nitrogen or argon; the time of the purging is independently preferably 4 to 30 seconds, more preferably 8 to 26 seconds, and even more preferably 13 to 20 seconds.
In the present invention, in the step (2), A x M y The material includes one of gallium oxide, gallium nitride, aluminum nitride, hafnium oxide, and silicon oxide, and more preferably one of gallium oxide, gallium nitride, and aluminum nitride, and still more preferably gallium oxide or gallium nitride.
In the present invention, in the step (2), A x M y In the case of gallium oxide or gallium nitride, the source a is preferably trimethylgallium or triethylgallium, more preferably trimethylgallium; a is that x M y In the case of aluminum nitride, the source A is preferably trimethylaluminum or triethylaluminum, more preferably triethylaluminum; a is that x M y In the case of hafnium oxide, the a source is preferably tetrakis (dimethylamine) hafnium or tris (dimethylamino) cyclopentadienyl hafnium, more preferably tris (dimethylamino) cyclopentadienyl hafnium; a is that x M y In the case of silica, the A source is preferably tris (dimethylamino) silane or bis (diethylamino) silane.
In the invention, when the source A in the step (2) is trimethylaluminum or triethylaluminum, heat preservation treatment is further included before the pulse, and the heat preservation temperature is 15-30 ℃.
In the present invention, the M source in the step (2) is preferably a nitrogen source or an oxygen source, more preferably an oxygen source; the nitrogen source is preferably N 2 Plasma, NH 3 Or NH 3 Plasma, more preferably N 2 Plasma or NH 3 More preferably N 2 A plasma; the oxygen source is preferably O 2 Plasma or ozone, more preferably O 2 A plasma; the O is 2 Power of plasmaIndependently, it is preferably 300 to 2500W, more preferably 500 to 2000W, and still more preferably 800 to 1500W; the N is 2 The power of the plasma is 500 to 3000W, more preferably 700 to 2500W, still more preferably 1150 to 1800W; the NH is 3 The power of the plasma is 200 to 1500W, more preferably 500 to 1200W, and still more preferably 750 to 1000W.
In the present invention, the specific process of forming the doped atomic layer in the step (2) is as follows: firstly pulse doping an atomic precursor source, then adopting nitrogen or argon to purge, then pulse an M source, and then adopting nitrogen or argon to purge; obtaining a doped atomic layer; the time of the purging is independently preferably 4 to 30 seconds, more preferably 8 to 26 seconds, and even more preferably 13 to 20 seconds.
In the present invention, the doping atoms in the step (2) are preferably silicon, nitrogen, sulfur, phosphorus, aluminum, copper, tin, titanium or tantalum, more preferably silicon, nitrogen, titanium or tantalum, and still more preferably silicon or tantalum;
when the dopant atoms are silicon, the precursor source of the dopant atoms is preferably tris (dimethylamino) silane or bis (diethylamino) silane, more preferably bis (diethylamino) silane;
when the dopant atom is nitrogen, the precursor source of the dopant atom is preferably NH 3 ；
When the dopant atom is sulfur, the precursor source of the dopant atom is preferably H 2 S；
When the dopant atom is phosphorus, the precursor source of the dopant atom is preferably pH 3 Plasma, trimethylphosphine or triethylphosphine, further preferably pH 3 Plasma or triethylphosphine, more preferably pH 3 A plasma;
when the doping atom is aluminum, the precursor source of the doping atom is preferably trimethylaluminum, triethylaluminum or dimethylisopropoxyaluminum, more preferably trimethylaluminum or dimethylisopropoxyaluminum, and even more preferably trimethylaluminum;
when the doping atom is copper, the precursor source of the doping atom is preferably bis (dimethylamine-2-propanol) copper;
when the doping atom is tin, the precursor source of the doping atom is preferably tetra (dimethylamine) tin;
when the dopant atoms are titanium, the precursor source of the dopant atoms is preferably titanium tetraisopropoxide, tetraethoxytitanium or titanium tetra (dimethylamino) oxide, more preferably titanium tetraisopropoxide or titanium tetraethoxyide, and still more preferably titanium tetraisopropoxide;
when the dopant atom is tantalum, the precursor source of the dopant atom is preferably tantalum ethoxide, tantalum penta (dimethylamino) or tantalum tris (diethylamino) t-butyramide, more preferably tantalum ethoxide or tantalum penta (dimethylamino) and still more preferably tantalum penta (dimethylamino).
In the invention, when the doping atom in the step (2) is titanium tetraisopropoxide, tetraethoxytitanium or tetra (dimethylamino) titanium, heat preservation treatment is further included before the pulse, and the temperature of heat preservation is 15-30 ℃.
In the present invention, the pulse time of the a source in the step (2) is independently preferably 0.1 to 0.4s, more preferably 0.15 to 0.35s, and still more preferably 0.2 to 0.28s; the carrier gas flow rate of the source A is independently preferably 100 to 300sccm, more preferably 125 to 285sccm, and even more preferably 180 to 220sccm; the carrier gas of source A is independently preferably N 2 Or Ar, more preferably N 2 。
In the present invention, the pulse time of the precursor source of the doping atoms in the step (2) is preferably 0.1 to 0.5s, more preferably 0.18 to 0.45s, and still more preferably 0.25 to 0.3s; the carrier gas flow rate of the precursor source of the doping atoms is preferably 100 to 300sccm, more preferably 125 to 285sccm, and even more preferably 180 to 220sccm; the carrier gas of the precursor source of the dopant atoms is preferably N 2 Or Ar, more preferably N 2 。
In the present invention, the pulse time of the M source in the step (2) is independently preferably 3 to 60s, more preferably 10 to 55s, and even more preferably 22 to 45s.
In the present invention, the step (2) is performed by doping the thin film or A x M y The total thickness of the film is independently preferably 5 to 1000nm, more preferably 50 to 945nm, and still more preferably 250 to 755nm.
In the present invention, the annealing conditions in the step (3) are as follows: the heating rate is preferably 5 to 10℃per minute, more preferably 5.5 to 9℃per minute, still more preferably 6 to 8℃per minute; the temperature is preferably 350 to 1100 ℃, more preferably 400 to 1000 ℃, still more preferably 550 to 850 ℃; the time is preferably 30 to 120 minutes, more preferably 45 to 105 minutes, and still more preferably 60 to 85 minutes.
The invention also provides the wafer-level epitaxial film prepared by the preparation method of the wafer-level epitaxial film.
The following description of the technical solutions in the embodiments of the present invention will be clear and complete, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
(1) Taking (0001) oriented sapphire as a substrate, and cleaning the (0001) oriented sapphire substrate, wherein the specific process comprises the following steps of: washing a (0001) oriented sapphire substrate by adopting deionized water, then placing the washed (0001) oriented sapphire substrate into an acetone solution, carrying out oscillation washing on the (0001) oriented sapphire substrate in an ultrasonic oscillator for 30min, then placing the (0001) oriented sapphire substrate into deionized water, carrying out oscillation washing on the (0001) oriented sapphire substrate in the ultrasonic oscillator for 15min, finally carrying out ultrasonic washing on the (0001) oriented sapphire substrate for 30s by using a 0.5% hydrofluoric acid solution, then washing the (0001) oriented sapphire substrate by using deionized water for 3min, and finally carrying out blow-drying by using high-purity nitrogen;
(2) Placing the cleaned (0001) oriented sapphire substrate into a vacuum reaction chamber of an atomic layer deposition device, heating to 280 ℃ at 800Pa, and adopting O 2 Functionalization of a substrate by plasma 600s, O 2 The power of the plasma is 500W;
(3) Trimethyl gallium is taken as gallium source, O 2 Plasma is used as oxygen source, diethylaminosilane is used as silicon source, N 2 Is a purge gas;
(4) Pulse trimethyl gallium into the vacuum reaction cavity, and adopt N after pulse is finished 2 Purging and then pulse O 2 Plasma, after pulse is finished, N is adopted 2 Purging, and repeating the above process for 5 times to obtain a gallium oxide film; wherein the pulse time of the trimethylgallium is 0.2s, the carrier gas flow rate of the trimethylgallium is 200sccm, and the carrier gas of the trimethylgallium is N 2 ，O 2 The pulse time of the plasma is 30s, O 2 The power of the plasma is 500W, N 2 Is 5s;
(5) Pulse the bisdiethylaminosilane into the vacuum reaction chamber, and adopt N after the pulse is finished 2 Purging and then pulse O 2 Plasma, after pulse is finished, N is adopted 2 Purging to deposit a layer of SiO on the gallium oxide film 2 A film; wherein the pulse time of the diethylaminosilane is 0.2s, the carrier gas flow of the diethylaminosilane is 200sccm, and the carrier gas of the diethylaminosilane is N 2 ，O 2 The pulse time of the plasma is 30s, O 2 The power of the plasma is 500W, N 2 Is 5s;
(6) Pulse trimethyl gallium into the vacuum reaction cavity, and adopt N after pulse is finished 2 Purging and then pulse O 2 Plasma, after pulse is finished, N is adopted 2 Purging, repeating the above process for 6 times, namely, at the SiO 2 Depositing a gallium oxide film on the film; wherein the pulse time of the trimethylgallium is 0.2s, the carrier gas flow rate of the trimethylgallium is 200sccm, and the carrier gas of the trimethylgallium is N 2 ，O 2 The pulse time of the plasma is 30s, O 2 The power of the plasma is 500W, N 2 Is 5s;
(7) Repeating the steps (4) - (6) for 50 times by taking the steps as a cycle to obtain the Si doped gallium oxide film with the thickness of 40 nm;
(8) Annealing the Si doped gallium oxide film for 60min under the oxygen atmosphere at the temperature rising rate of 6 ℃/min to 900 ℃ to obtain the wafer-level Si doped beta-Ga 2 O 3 A film.
The Si prepared above is doped with beta-Ga 2 O 3 The film was tested for performance and visible light transmittanceMore than 90%, the forbidden bandwidth is between 4.5 and 5.3eV, XRD measurement shows that the film presents (-201) preferred orientation, and FWHM is less than 500arcsec.
Example 2
(1) Taking (0001) oriented sapphire as a substrate, and cleaning the (0001) oriented sapphire substrate, wherein the specific process comprises the following steps of: washing a (0001) oriented sapphire substrate by adopting deionized water, then placing the washed (0001) oriented sapphire substrate into an acetone solution, carrying out oscillation washing on the (0001) oriented sapphire substrate in an ultrasonic oscillator for 30min, then placing the (0001) oriented sapphire substrate into deionized water, carrying out oscillation washing on the (0001) oriented sapphire substrate in the ultrasonic oscillator for 15min, finally carrying out ultrasonic washing on the (0001) oriented sapphire substrate for 30s by using a 0.5% hydrofluoric acid solution, then washing the (0001) oriented sapphire substrate by using deionized water for 3min, and finally carrying out blow-drying by using high-purity nitrogen;
(2) Placing the cleaned (0001) oriented sapphire substrate into a vacuum reaction chamber of an atomic layer deposition device, heating to 280 ℃ at 800Pa, and adopting O 2 Functionalization of a substrate by plasma 600s, O 2 The power of the plasma is 500W;
(3) Trimethyl gallium is taken as gallium source, O 2 Plasma is used as oxygen source, diethylaminosilane is used as silicon source, N 2 Is a purge gas;
(4) Pulse trimethyl gallium into the vacuum reaction cavity, and adopt N after pulse is finished 2 Purging and then pulse O 2 Plasma, after pulse is finished, N is adopted 2 Purging, and repeating the above process for 3 times to obtain a gallium oxide film; wherein the pulse time of the trimethylgallium is 0.2s, the carrier gas flow rate of the trimethylgallium is 200sccm, and the carrier gas of the trimethylgallium is N 2 ，O 2 The pulse time of the plasma is 30s, O 2 The power of the plasma is 500W, N 2 Is 5s;
(5) Pulse the bisdiethylaminosilane into the vacuum reaction chamber, and adopt N after the pulse is finished 2 Purging and then pulse O 2 Plasma, after pulse is finished, N is adopted 2 Purging to deposit a layer of SiO on the gallium oxide film 2 A film; which is a kind ofIn the method, the pulse time of the diethylaminosilane is 0.2s, the carrier gas flow of the diethylaminosilane is 200sccm, and the carrier gas of the diethylaminosilane is N 2 ，O 2 The pulse time of the plasma is 30s, O 2 The power of the plasma is 500W, N 2 Is 5s;
(6) Pulse trimethyl gallium into the vacuum reaction cavity, and adopt N after pulse is finished 2 Purging and then pulse O 2 Plasma, after pulse is finished, N is adopted 2 Purging, repeating the above process for 4 times, namely, at the SiO 2 Depositing a gallium oxide film on the film; wherein the pulse time of the trimethylgallium is 0.2s, the carrier gas flow rate of the trimethylgallium is 200sccm, and the carrier gas of the trimethylgallium is N 2 ，O 2 The pulse time of the plasma is 30s, O 2 The power of the plasma is 500W, N 2 Is 5s;
(7) Repeating the steps (4) - (6) for 30 times by taking the steps as a cycle to obtain the Si doped gallium oxide film with the thickness of 16 nm;
(8) Annealing the Si doped gallium oxide film for 60min under the oxygen atmosphere at the temperature rising rate of 6 ℃/min to 900 ℃ to obtain the wafer-level Si doped beta-Ga 2 O 3 A film.
Example 3
(1) Taking (0001) oriented sapphire as a substrate, and cleaning the (0001) oriented sapphire substrate, wherein the specific process comprises the following steps of: washing a (0001) oriented sapphire substrate by adopting deionized water, then placing the washed (0001) oriented sapphire substrate into an acetone solution, carrying out oscillation washing on the (0001) oriented sapphire substrate in an ultrasonic oscillator for 30min, then placing the (0001) oriented sapphire substrate into deionized water, carrying out oscillation washing on the (0001) oriented sapphire substrate in the ultrasonic oscillator for 15min, finally carrying out ultrasonic washing on the (0001) oriented sapphire substrate for 30s by using a 0.5% hydrofluoric acid solution, washing the (0001) oriented sapphire substrate by using deionized water for 3min, and drying the (0001) oriented sapphire substrate by using high-purity nitrogen;
(2) Placing the cleaned (0001) oriented sapphire substrate into a vacuum reaction chamber of an atomic layer deposition device, heating to a preset temperature of 400 ℃ under a pressure of 1500Pa, and adopting NH (NH) 3 Plasma contrastThe bottom is treated with functionalization 300s, NH 3 The power of the plasma is 800W;
(3) Trimethylaluminum is used as an aluminum source and NH is used as a catalyst 3 The plasma is a nitrogen source, the titanium tetrachloride is a titanium source, and N 2 Is a purge gas; the tank containing the metal-organic precursor is subjected to heat preservation, the temperature of trimethylaluminum is controlled at 18 ℃, and titanium tetrachloride is controlled at 20 ℃;
(4) Pulse trimethylaluminum into the vacuum reaction chamber, and adopt N after pulse is finished 2 Purging and then pulsing NH 3 Plasma, after pulse is finished, N is adopted 2 Purging, and repeating the above process for 3 times to obtain an aluminum nitride film; wherein the pulse time of the trimethylaluminum is 0.2s, the carrier gas flow rate of the trimethylaluminum is 150sccm, and the carrier gas of the trimethylaluminum is N 2 ，NH 3 The pulse time of the plasma was 10s, NH 3 The power of the plasma is 800W, N 2 Is 10s;
(5) Pulse titanium tetrachloride into a vacuum reaction chamber, and adopt N after the pulse is ended 2 Purging and then pulsing NH 3 Plasma, after pulse is finished, N is adopted 2 Purging, namely depositing a layer of titanium nitride on the aluminum nitride film; wherein the pulse time of the titanium tetrachloride is 0.2s, the carrier gas flow rate of the titanium tetrachloride is 150sccm, and the carrier gas of the titanium tetrachloride is N 2 ，NH 3 The pulse time of the plasma was 10s, NH 3 The power of the plasma is 800W, N 2 Is 10s;
(6) Pulse trimethylaluminum into the vacuum reaction chamber, and adopt N after pulse is finished 2 Purging and then pulsing NH 3 Plasma, after pulse is finished, N is adopted 2 Purging, and repeating the above process for 4 times, namely depositing an aluminum nitride film on the titanium nitride film layer; wherein the pulse time of the trimethylaluminum is 0.2s, the carrier gas flow rate of the trimethylaluminum is 150sccm, and the carrier gas of the trimethylaluminum is N 2 ，NH 3 The pulse time of the plasma was 10s, NH 3 The power of the plasma is 800W, N 2 Is 10s;
(7) Repeating the steps (4) - (6) for 80 times by taking the steps as a cycle to obtain a Ti-doped aluminum nitride film with the thickness of 58 nm;
(8) And (3) annealing the Ti-doped aluminum nitride film for 60 minutes under the nitrogen atmosphere at the temperature rising rate of 8 ℃/min to 500 ℃ to obtain the wafer-level Ti-doped aluminum nitride film.
Example 4
(1) Taking (0001) oriented sapphire as a substrate, and cleaning the (0001) oriented sapphire substrate, wherein the specific process comprises the following steps of: washing a (0001) oriented sapphire substrate by adopting deionized water, then placing the washed (0001) oriented sapphire substrate into an acetone solution, carrying out oscillation washing on the (0001) oriented sapphire substrate in an ultrasonic oscillator for 30min, then placing the (0001) oriented sapphire substrate into deionized water, carrying out oscillation washing on the (0001) oriented sapphire substrate in the ultrasonic oscillator for 15min, finally carrying out ultrasonic washing on the (0001) oriented sapphire substrate for 30s by using a 0.5% hydrofluoric acid solution, washing the (0001) oriented sapphire substrate by using deionized water for 3min, and drying the (0001) oriented sapphire substrate by using high-purity nitrogen;
(2) Placing the cleaned (0001) oriented sapphire substrate into a vacuum reaction chamber of an atomic layer deposition device, heating to 280 ℃ at 800Pa, and adopting O 2 Functionalization 200s, O of substrate by plasma 2 The power of the plasma is 600W;
(3) Trimethyl gallium is taken as gallium source, O 2 The plasma is used as an oxygen source, N 2 Is a purge gas;
(4) Pulse trimethyl gallium into the vacuum reaction cavity, and adopt N after pulse is finished 2 Purging and then pulse O 2 Plasma, after pulse is finished, N is adopted 2 Purging, and repeating the above process for 50 times to obtain a gallium oxide film with the thickness of 36 nm; wherein the pulse time of the trimethylgallium is 0.2s, the carrier gas flow rate of the trimethylgallium is 250sccm, and the carrier gas of the trimethylgallium is N 2 ，O 2 The pulse time of the plasma is 30s, O 2 The power of the plasma is 600W, N 2 Is 5s;
(5) Annealing the gallium oxide film for 60min under the oxygen atmosphere at the temperature rising rate of 6 ℃/min to 900 ℃ to obtain the wafer-level alpha-Ga 2 O 3 A film.
For the above prepared alpha-Ga 2 O 3 The film is subjected to performance test, the visible light transmittance of the film is more than 90%, the forbidden band width is between 4.5 and 5.3eV, and XRD measurement shows that the film has alpha-Ga 2 O 3 The film exhibits (006) epitaxial orientation and has a FWHM of less than 400arcsec.
Example 5
(1) Taking (0001) oriented sapphire as a substrate, and cleaning the (0001) oriented sapphire substrate, wherein the specific process comprises the following steps of: washing a (0001) oriented sapphire substrate by adopting deionized water, then placing the washed (0001) oriented sapphire substrate into an acetone solution, carrying out oscillation washing on the (0001) oriented sapphire substrate in an ultrasonic oscillator for 30min, then placing the (0001) oriented sapphire substrate into deionized water, carrying out oscillation washing on the (0001) oriented sapphire substrate in the ultrasonic oscillator for 15min, finally carrying out ultrasonic washing on the (0001) oriented sapphire substrate for 30s by using a 0.5% hydrofluoric acid solution, washing the (0001) oriented sapphire substrate by using deionized water for 3min, and drying the (0001) oriented sapphire substrate by using high-purity nitrogen;
(2) Placing the cleaned (0001) oriented sapphire substrate into a vacuum reaction chamber of an atomic layer deposition device, heating to 280 ℃ at 800Pa, and adopting O 2 Functionalization 200s, O of substrate by plasma 2 The power of the plasma is 500W;
(3) Trimethyl gallium is used as a gallium source, tetra (dimethylamine) tin is used as a tin source, and O 2 The plasma is used as an oxygen source, N 2 Is a purge gas;
(4) Pulse trimethyl gallium into the vacuum reaction cavity, and adopt N after pulse is finished 2 Purging and then pulse O 2 Plasma, after pulse is finished, N is adopted 2 Purging, and repeating the above process for 5 times; wherein the pulse time of the trimethylgallium is 0.2s, the carrier gas flow rate of the trimethylgallium is 200sccm, and the carrier gas of the trimethylgallium is N 2 ，O 2 The pulse time of the plasma is 30s, O 2 The power of the plasma is 500W, N 2 Is 5s;
(5) Pulse tetra (dimethylamine) tin into the vacuum reaction chamber, and adopt N after the pulse is finished 2 Purging and then pulse O 2 The plasma is generated by a plasma source,after the pulse is ended, N is adopted 2 Purging; wherein the pulse time of the tetra (dimethylamine) tin is 0.2s, the carrier gas flow rate of the tetra (dimethylamine) tin is 200sccm, and the carrier gas of the tetra (dimethylamine) tin is N 2 ，O 2 The pulse time of the plasma is 30s, O 2 The power of the plasma is 500W, N 2 Is 5s;
(6) Pulse trimethyl gallium into the vacuum reaction cavity, and adopt N after pulse is finished 2 Purging and then pulse O 2 Plasma, after pulse is finished, N is adopted 2 Purging, and repeating the above process for 6 times; wherein the pulse time of the trimethylgallium is 0.2s, the carrier gas flow rate of the trimethylgallium is 200sccm, and the carrier gas of the trimethylgallium is N 2 ，O 2 The pulse time of the plasma is 30s, O 2 The power of the plasma is 500W, N 2 Is 5s;
(7) Repeating the steps (4) - (6) for 50 times by taking the steps as a cycle to obtain the Sn-doped gallium oxide film with the thickness of 41 nm;
(6) Annealing the Sn-doped gallium oxide film for 60min under the oxygen atmosphere at the temperature rising rate of 6 ℃/min to 900 ℃ to obtain the wafer-level Sn-doped alpha-Ga 2 O 3 A film.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.

Claims (9)

1. The preparation method of the wafer-level epitaxial film is characterized by comprising the following steps of:
(1) Placing a substrate into a vacuum reaction cavity of atomic layer deposition equipment, heating to a preset temperature, and performing functionalization treatment on the substrate by adopting an M source;
(2) Sequentially pulsing A source and M source into the vacuum reaction cavity, and repeating the pulsing A source and M source to obtain A x M y A thin film layer; then pulse doping the precursor source and M source of atoms to obtain a doped atomic layer; then pulse in turnFlushing the source A and the source M, and repeating the pulse source A and the pulse source M to obtain A x M y A thin film layer; repeating the above process as a cycle to obtain a doped film;
or pulse A source and M source in sequence into the vacuum reaction cavity, and repeat pulse A source and M source to obtain A x M y A film;
(3) To dope film or A x M y Annealing the film to obtain a wafer-level epitaxial nitride/oxide film;
in the step (2), A x M y Including one of gallium oxide, gallium nitride, aluminum nitride, hafnium oxide, and silicon oxide.
2. The method for preparing a wafer-level epitaxial thin film according to claim 1, wherein the substrate in the step (1) is a silicon substrate or a sapphire substrate, the preset temperature in the step (1) is 150-500 ℃, the pressure in the vacuum reaction chamber in the step (1) is 500-1500 Pa, and the time of the functionalization treatment in the step (1) is 120-600 s.
3. The method for producing a wafer-level epitaxial thin film according to claim 1 or 2, wherein a in the step (2) x M y When gallium oxide or gallium nitride is adopted, the source A is trimethyl gallium or triethyl gallium; a is that x M y When the source A is aluminum nitride, the source A is trimethylaluminum or triethylaluminum; a is that x M y In the case of hafnium oxide, the A source is hafnium tetra (dimethylamine) or hafnium tri (dimethylamino) cyclopentadienyl; a is that x M y In the case of silica, the A source is tris (dimethylamino) silane or bis (diethylamino) silane.
4. The method of claim 3, wherein the M source in step (2) is a nitrogen source or an oxygen source; the nitrogen source is N 2 Plasma, NH 3 Or NH 3 Plasma, the oxygen source is O 2 Plasma or ozone.
5. The method of claim 4, wherein the doping atoms in the step (2) are silicon, nitrogen, sulfur, phosphorus, aluminum, copper, tin, titanium or tantalum, and when the doping atoms are silicon, the precursor source of the doping atoms is tris (dimethylamino) silane or bis (diethylamino) silane; when the doping atom is nitrogen, the precursor source of the doping atom is NH 3 The method comprises the steps of carrying out a first treatment on the surface of the When the doping atom is sulfur, the precursor source of the doping atom is H 2 S, S; when the doping atom is phosphorus, the precursor source of the doping atom is PH 3 Plasma, trimethylphosphine or triethylphosphine; when the doping atoms are aluminum, the precursor sources of the doping atoms are trimethylaluminum, triethylaluminum or dimethyl isopropoxyaluminum; when the doping atoms are copper, the precursor source of the doping atoms is bis (dimethylamine-2-propanol) copper; when the doping atoms are titanium, the precursor sources of the doping atoms are titanium tetraisopropoxide, tetraethoxytitanium or tetra (dimethylamino) titanium; when the doping atom is tantalum, the precursor source of the doping atom is ethoxy tantalum, penta (dimethylamino) tantalum or tri (diethylamino) tert-butyramide tantalum; when the doping atom is tin, the precursor source of the doping atom is tetra (dimethylamine) tin.
6. The method of claim 4 or 5, wherein the pulse time of the a source in the step (2) is independently 0.1 to 0.4s, the carrier gas flow rate of the a source is independently 100 to 300sccm, and the carrier gas of the a source is independently N 2 Or Ar; the pulse time of the precursor source of the doping atoms in the step (2) is 0.1-0.5 s, the carrier gas flow rate of the precursor source of the doping atoms is 100-300 sccm, and the carrier gas of the precursor source of the doping atoms is N 2 Or Ar; the pulse time of the M source in the step (2) is independently 3-60 s.
7. The method of preparing a wafer-level epitaxial thin film according to claim 6, wherein the doping thin film or a in the step (2) x M y The total thickness of the film is independently 5-1000 nm.
8. The method of preparing a wafer-level epitaxial thin film according to claim 7, wherein the annealing conditions in step (3): the temperature rising rate is 5-10 ℃/min, the temperature is 350-1100 ℃ and the time is 30-120 min.
9. A wafer-level epitaxial film produced by the process for producing a wafer-level epitaxial film according to any one of claims 1 to 8.
CN202310404521.2A 2023-04-14 2023-04-14 Wafer-level epitaxial film and preparation method thereof Pending CN116254598A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310404521.2A CN116254598A (en) 2023-04-14 2023-04-14 Wafer-level epitaxial film and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310404521.2A CN116254598A (en) 2023-04-14 2023-04-14 Wafer-level epitaxial film and preparation method thereof

Publications (1)

Publication Number Publication Date
CN116254598A true CN116254598A (en) 2023-06-13

Family

ID=86688152

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310404521.2A Pending CN116254598A (en) 2023-04-14 2023-04-14 Wafer-level epitaxial film and preparation method thereof

Country Status (1)

Country Link
CN (1) CN116254598A (en)

Similar Documents

Publication Publication Date Title
CN105861987B (en) Growing method of gallium nitride based on hexagonal boron nitride and magnetron sputtering aluminium nitride
US8722526B2 (en) Growing of gallium-nitrade layer on silicon substrate
CN112647130B (en) Method for growing gallium oxide film by low-pressure chemical vapor deposition
JP2004111848A (en) Sapphire substrate, epitaxial substrate using it, and its manufacturing method
CN112885709A (en) Preparation method of silicon carbide epitaxial structure and semiconductor device
JP2015065447A (en) Thin film forming method and film forming apparatus
CN116254598A (en) Wafer-level epitaxial film and preparation method thereof
WO1997033305A1 (en) Silicon single crystal and process for producing single-crystal silicon thin film
JPH02260531A (en) Treatment of silicon surface
CN113243039B (en) Method for growing doped group IV materials
JP3684660B2 (en) Manufacturing method of semiconductor single crystal thin film
CN112877674A (en) Growth method of Sn-doped gallium oxide film material with accurately-controllable content
JPS6348817A (en) Epitaxial growth method
JPS59190209A (en) Preparation of silicon coating film
CN114381710A (en) Preparation method of GaN film, GaN film and application of GaN film
CN106711020B (en) Nitridation method of substrate and preparation method of gallium nitride buffer layer
JPS62202894A (en) Vapor growth method for iii-v compound semiconductor
CN116815162A (en) Method for growing CaO film by utilizing ALD technology
CN116666494A (en) Two-step heteroepitaxial growth gallium oxide film and preparation method thereof
JPH03185716A (en) Method of growing compound semiconductor crystal
RU2168237C2 (en) Method for producing nitride film on surfaces of semiconductor compounds
CN115295412A (en) High-temperature rapid heat treatment process and device for silicon carbide device
CN117832058A (en) Method for depositing nitride film on silicon substrate at low temperature
JP3063317B2 (en) Vapor growth method of semiconductor thin film
CN114381806A (en) Preparation method of two-dimensional aluminum nitride crystal

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination