CN116247127A

CN116247127A - Photoelectric device, manufacturing method thereof and implantable device

Info

Publication number: CN116247127A
Application number: CN202310323631.6A
Authority: CN
Inventors: 尹斓; 孙鹏程; 杨灿
Original assignee: Tsinghua University
Current assignee: Tsinghua University
Priority date: 2023-03-29
Filing date: 2023-03-29
Publication date: 2023-06-09

Abstract

The present disclosure relates to an optoelectronic device, a method of manufacturing the same, and an implantable device. The manufacturing method comprises the following steps: doping preset particles into a silicon layer on an insulating substrate through ion implantation to form a PN junction film; removing an oxide layer between the PN junction film and the insulating substrate; preparing a first conductive film above the PN junction film; transferring the PN junction film covered with the first conductive film onto a first surface of a flexible substrate to obtain a photoelectric device; the first surface of the flexible substrate is covered with a second conductive film with a preset shape, and the first conductive film on the PN junction film is in contact with the second conductive film. The disclosure provides an optoelectronic device, a method of manufacturing the same, and an implantable device. The photoelectric device provided has good biocompatibility with an implanted object, can be degraded and removed from the body after the treatment work is completed in the body of the object, and has excellent effects on repairing and stimulating nerves and repairing and stimulating cells.

Description

Photoelectric device, manufacturing method thereof and implantable device

Technical Field

The present disclosure relates to the field of electronic device manufacturing, and in particular, to an optoelectronic device, a method of manufacturing the optoelectronic device, and an implantable device.

Background

With advances in technology, the implantation of devices into the body for adaptive therapy is gaining increasing attention. For example, the implantable device is used for electrically stimulating nerves, so as to realize the treatment and alleviation of diseases such as epilepsy, depression, pain and the like which are refractory to drugs. In the related art, the implantable device has the problems of low efficiency, poor treatment effect, difficult processing and manufacturing, and the like.

Disclosure of Invention

In view of this, the present disclosure proposes an optoelectronic device, a method of manufacturing the same, and an implantable device.

According to an aspect of the present disclosure, there is provided a method of manufacturing an optoelectronic device, including:

doping preset particles into a silicon layer on an insulating substrate through ion implantation to form a PN junction film;

removing an oxide layer between the PN junction film and the insulating substrate;

preparing a first conductive film above the PN junction film;

transferring the PN junction film covered with the first conductive film onto a first surface of a flexible substrate to obtain a photoelectric device;

the first surface of the flexible substrate is covered with a second conductive film with a preset shape, and the first conductive film on the PN junction film is in contact with the second conductive film.

In one possible implementation, the method further includes:

depositing a second conductive film on the flexible substrate;

and etching the second conductive film according to a preset shape.

In one possible implementation, transferring the PN junction film covered with the first conductive film onto the first side of the flexible substrate to obtain the optoelectronic device includes:

transferring the PN junction film covered with the first conductive film to a first heat release adhesive tape, wherein the first conductive film and the first heat release adhesive tape are stuck together;

transferring the PN junction film covered with the first conductive film onto a second heat release adhesive tape, wherein one surface of a silicon layer of the PN junction film is stuck with the second heat release adhesive tape;

and transferring the PN junction film covered with the first conductive film to the first surface of the flexible substrate by using the second heat release adhesive tape so as to enable the first conductive film on the PN junction film to be in contact with the second conductive film.

In one possible implementation, the material of the flexible substrate is a flexible, light-transmissive material; the first conductive film and the second conductive film are made of the same material, the first conductive film and the second conductive film are metal conductive films, and the material of the metal conductive films comprises molybdenum or gold.

In one possible implementation, the preset shape includes an array shape, a preset pattern shape;

the second conductive film is arranged on the first surface of the flexible substrate at intervals in a strip mode, the length of the strip is 0.5cm-2cm, the width of the strip is 100 mu m-500 mu m, the thickness of the strip is 200nm-400nm, and the interval between the strips is 500 mu m-900 mu m.

According to another aspect of the present disclosure, there is provided an optoelectronic device comprising: a PN junction film, a first conductive film, a second conductive film and a flexible substrate,

the second conductive film covers the first surface of the flexible substrate according to a preset shape;

the first conductive film covers one surface of the PN junction film;

the PN junction film is positioned on the first surface of the flexible substrate, and the first conductive film on the PN junction film is in contact with the second conductive film on the first surface of the flexible substrate;

wherein the optoelectronic device is manufactured based on the above method.

According to another aspect of the present disclosure, there is provided an in-line apparatus comprising: an optoelectronic device, a light source and a controller,

the photovoltaic device, which is manufactured by the method of any one of claims 1 to 5, being implanted in a target location of a subject;

the controller is used for controlling the light source to emit laser to the photoelectric device according to emission parameters;

wherein the emission parameters include the wavelength of laser, the wavelength is 622nm-1000nm, and the target position includes any one of the following positions: the surface of a damaged nerve of the subject, the location of damaged cardiomyocytes of the heart of the subject, the surface of a nerve of the subject in which dysfunction is present.

In one possible implementation, the method further includes: the optical fiber is used as a fiber-optic cable,

the optical fiber is connected between the photoelectric device and the light source and is used for transmitting the laser to the photoelectric device;

the implantable device is a portable wearable device.

In a possible implementation manner, the controller is further configured to control the light source to emit laser light corresponding to the user operation according to the detected user operation.

In a possible implementation manner, the controller is further provided with a trigger key, and the controller is further configured to determine that the user operation is detected in a case that an operation for the trigger key is detected.

The present disclosure provides an optoelectronic device, a method of manufacturing the same, and an implantable device. The photoelectric device provided has good biocompatibility with an implanted object, can be degraded and removed from the body after the treatment work is completed in the body of the object, and has excellent effects on repairing and stimulating nerves and repairing and stimulating cells.

Other features and aspects of the present disclosure will become apparent from the following detailed description of exemplary embodiments, which proceeds with reference to the accompanying drawings.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate exemplary embodiments, features and aspects of the present disclosure and together with the description, serve to explain the principles of the disclosure.

Fig. 1 shows a schematic structural diagram of an optoelectronic device according to an embodiment of the present disclosure.

Fig. 2 illustrates a schematic perspective view of an optoelectronic device according to an embodiment of the present disclosure.

Fig. 3 shows a schematic structural view of a flexible substrate in an optoelectronic device according to an embodiment of the present disclosure.

Fig. 4 shows a flow chart of a method of manufacturing an optoelectronic device according to an embodiment of the present disclosure.

Fig. 5 shows a flow diagram of a method of fabricating an optoelectronic device according to an embodiment of the present disclosure.

Fig. 6 and 7 respectively show a schematic structural view of an implantable device according to an embodiment of the present disclosure.

Fig. 8 is a graph showing the change of photovoltage with light intensity of three photoelectric devices.

Fig. 9 is a schematic diagram of a photocurrent curve of a photovoltaic device for calculating the amount of charge.

Fig. 10A shows a schematic diagram of faraday charge amounts of three photoelectric devices.

Fig. 10B shows a schematic diagram of the capacitive charge amounts of three optoelectronic devices.

Fig. 10C shows a schematic diagram of the amount of injected charge for three optoelectronic devices.

Fig. 11 shows a schematic of CV curves for three devices.

Fig. 12 shows a schematic XPS analysis result of example 2.

Fig. 13 shows a schematic view of the surface roughness of three devices.

Fig. 14 shows schematic diagrams of rat sciatic nerve signals detected by the optoelectronic devices example 1, example 2 under different illumination intensities.

Fig. 15 shows a graph of the electromyographic signals measured by directly illuminating the example 2 device.

Fig. 16 shows a graph of electromyographic signals measured by illuminating the example 2 device through the skin.

Fig. 17A, 17B, and 17C show sections of nerve tissue from different groups 8 weeks after surgery, respectively.

Fig. 18 shows a graph comparing the magnitudes of the electromyographic signals 8 weeks after the different groups of operations.

Fig. 19 shows a graph comparing the delay time of the 8-week myoelectric signal after the operation of the different groups.

Detailed Description

Various exemplary embodiments, features and aspects of the disclosure will be described in detail below with reference to the drawings. In the drawings, like reference numbers indicate identical or functionally similar elements. Although various aspects of the embodiments are illustrated in the accompanying drawings, the drawings are not necessarily drawn to scale unless specifically indicated.

The word "exemplary" is used herein to mean "serving as an example, embodiment, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments.

In addition, numerous specific details are set forth in the following detailed description in order to provide a better understanding of the present disclosure. It will be understood by those skilled in the art that the present disclosure may be practiced without some of these specific details. In some instances, methods, means, elements, and circuits well known to those skilled in the art have not been described in detail in order not to obscure the present disclosure.

Fig. 1 shows a schematic structural diagram of an optoelectronic device according to an embodiment of the present disclosure. Fig. 2 illustrates a schematic perspective view of an optoelectronic device according to an embodiment of the present disclosure. As shown in fig. 1 and 2, the photovoltaic device 100 includes a PN junction film 11, a first conductive film 12, a second conductive film 13, and a flexible substrate 14.

The second conductive film 13 is coated on the first surface of the flexible substrate 14 according to a preset shape. The first conductive film 12 covers one side of the PN junction film 11. The PN junction film 11 is positioned on the first surface of the flexible substrate 14, and the first conductive film 12 on the PN junction film 11 is in contact with the second conductive film 13 on the first surface of the flexible substrate 14. After the optoelectronic device 100 is irradiated by the laser, the PN junction film 11 converts the light energy of the laser into electric energy, and the electric energy is released through the first conductive film 12 and the second conductive film 13.

Fig. 3 shows a schematic structural view of a flexible substrate in an optoelectronic device according to an embodiment of the present disclosure. In one possible implementation manner, the preset shape may include an array shape and a preset pattern shape, so that the second conductive film 13 has a hollowed-out area, and further, a part of the first surface of the flexible substrate 14 where the hollowed-out area of the second conductive film 13 is located can be exposed, so that laser required to be irradiated to the PN junction film can enter the PN junction film through the exposed area of the flexible substrate 14 and the hollowed-out area of the second conductive film 13.

In some embodiments, the material of the flexible substrate 14 may be a flexible, biocompatible, optically transmissive, degradable material. In some embodiments, the flexible substrate 14 may also be a tacky material. In this way, the exposed area of the flexible substrate 14 is used to achieve a fixed connection between the PN junction film 11 and the flexible substrate 14, i.e., the first conductive film 12 is adhered to the exposed area of the flexible substrate 14. For example, the material of the flexible substrate 14 may be PLLA-PTMC (Copolymer of poly (L-lactic acid) and poly (trimethylene carbonate)), L-polylactic acid-polytrimethylene carbonate. In some embodiments, the optoelectronic device may further include an adhesive layer for achieving a fixed connection between the exposed area of the flexible substrate 14, the second conductive film 13, and the first conductive film 12, where the adhesive layer may be a material that has good adhesion, light transmission, flexibility, and good biocompatibility. The light transmittance of the material described in the present disclosure may refer to the property of being able to transmit laser light that needs to be irradiated to the PN junction film.

In some embodiments, since the optoelectronic device is used for implantation in a living body for a related treatment, the materials of the various portions of the optoelectronic device 100 may be selected according to the length of time the optoelectronic device is to be implanted in the living body, and the dimensions (e.g., thickness) of the various portions of the optoelectronic device 100 may be set to ensure that the optoelectronic device 100 remains in the living body for a sufficient length of time for the treatment and is degraded in the living body after the treatment is completed, thereby draining the living body with the metabolism of the living body.

In some embodiments, the array shape comprises an array of strips as shown in fig. 3. If the second conductive film 13 is covered on the first surface of the flexible substrate 14 in the form of an array of strips, the strips may have a length of 0.5cm to 2cm, a width of 100 μm to 500 μm, a thickness of 200nm to 400nm, and a pitch of 500 μm to 900 μm in the case where the second conductive film 13 is arranged on the first surface of the flexible substrate 14 at intervals in the form of strips. For example, as shown in fig. 3, the strips of each second conductive film 13 have a length of 1cm, a width of 300 μm, a thickness of 300nm, and a pitch between the strips may be 700 μm. In some embodiments, the size and spacing of the strips, as well as the preset pattern, may be set as desired for light transmission, which is not limiting to the present disclosure.

In one possible implementation, the first conductive film 12 and the second conductive film 13 are made of the same material, and the material may be a material with flexibility, good biocompatibility, degradability, and good conductivity, which is not limited in this disclosure. In some embodiments, the first conductive film 12 and the second conductive film 14 may be metal conductive films, and the material of the metal conductive films includes molybdenum Mo or gold Au. The thickness of the first conductive film 12 may be 5nm to 15nm. For example, the first conductive film 12 may be a molybdenum film or a gold film of 10 nm.

Fig. 4 shows a flow chart of a method of manufacturing an optoelectronic device according to an embodiment of the present disclosure. As shown in fig. 4, fabricating the optoelectronic device may include steps S101-S104. Fig. 5 shows a flow diagram of a method of fabricating an optoelectronic device according to an embodiment of the present disclosure. The steps of the method of manufacturing an optoelectronic device are schematically described below with reference to fig. 4 and 5.

In step S101, a PN junction film 11 is formed by doping a predetermined particle into the silicon layer 111 on the insulating substrate 21 by ion implantation.

In some embodiments, the Silicon layer 111 On the insulating substrate 21 may be formed based On SOI (Silicon-On-Insulator) technology, as shown in fig. 5, with an oxide layer 22 between the top layer Silicon 111 and the insulating substrate 21. In some embodiments, the top layer silicon may be low doped n-type silicon or p-type silicon, and the resistivity may be greater than or equal to 0.1 Ω -cm, for example, the conductivity may be 0.1 Ω -cm 20 Ω -cm. The preset particles may be set according to the top silicon, and if the top silicon is low doped n-type silicon, the preset particles may be boron atoms or the like. If the top silicon layer is low doped p-type silicon, the preset particles may be phosphorus atoms, etc., and those skilled in the art may set the preset particles according to actual needs, which is not limited in this disclosure.

In some embodiments, the doping of the preset particles may be performed by ion implantation, where the ion implantation may be set as needed. For example, if the top silicon in the SOI is N-type, it is necessary to dope the N-type silicon with P-type: the boron (B) is ion-implanted at a dose of 4X 10 ¹⁴ ions/cm ² The energy may be 30keV. After cleaning, the SOI was annealed at 950 ℃ for 30min for dopant activation. The implantation depth may be 0.43 microns. If the top silicon in the SOI is P-type, the P-type silicon needs to be doped with N-type: the ion implantation of phosphorus (P) can be performed at a dose of 4e ¹⁴ ions/cm ² The energy may be 75keV. After cleaning, the SOI was annealed at 950 ℃ for 30min for dopant activation. The implantation depth may be 0.4 microns.

In some embodiments, as shown in fig. 5, since the size of the top layer silicon on the SOI is far greater than the size of the PN junction film 11 required for the optoelectronic device, the preparation of the PN junction films 11 of a plurality of optoelectronic devices can be completed at one time, so that after the doping of the preset particles is completed, photolithography and reactive ion etching (Reactive ion etching, RIE) can be used to etch according to the required device shape, so as to form a plurality of PN junction films 11.

In step S102, the oxide layer 22 between the PN junction film 11 and the insulating substrate 21 is removed. The oxide layer 22 may be removed using a HF wet etch. Among them, the solvent used in the wet etching may be hydrofluoric acid HF or the like, which is not limited in this application.

In step S104, a first conductive film 12 is prepared over the PN junction film 11.

Wherein the preparation process for preparing the first conductive film may be set according to the material of the first conductive film 12. For example, if the material of the first conductive film 12 is Mo or Au, mo or Au may be deposited over the PN junction film 11 by magnetron sputtering to form the first conductive film 12.

In step S105, the PN junction film 11 covered with the first conductive film 12 is transferred onto the first face of the flexible substrate 14, resulting in the optoelectronic device 100. Wherein, the first surface of the flexible substrate 14 is covered with a second conductive film 13 having a preset shape, and the first conductive film 12 on the PN junction film 11 is in contact with the second conductive film 13.

In some embodiments, if the adhesiveness of the flexible base 14 may be large enough to transfer the PN junction film 11 covered with the first conductive film 12 from the insulating substrate 21, the PN junction film 11 covered with the first conductive film 12 on the insulating substrate 21 may be directly transferred onto the flexible base 14.

In some embodiments, if the adhesiveness of the flexible substrate 14 is difficult to transfer, the PN junction film 11 covered with the first conductive film 12 may be transferred onto the first heat release tape 31 as shown in fig. 5, and the first conductive film 12 and the first heat release tape 31 are stuck together to complete the first transfer. And then the PN junction film 11 covered with the first conductive film 12 is transferred onto the second heat release adhesive tape 32, and one surface of the silicon layer 111 of the PN junction film 11 is adhered to the second heat release adhesive tape 32 to complete the second transfer. The PN junction film 11 covered with the first conductive film 12 is transferred to the first side of the flexible substrate 14 using the second heat release tape 32 so that the first conductive film 12 on the PN junction film 11 is in contact with the second conductive film 13, completing the third transfer.

The application also provides an implantable device comprising the above-described optoelectronic device, a light source and a controller. The optoelectronic device is implanted at a target location of a subject. And the controller is used for controlling the light source to emit laser to the photoelectric device according to the emission parameters.

Wherein the emission parameters include the wavelength of the laser, which may be 622nm to 1000nm. The target location may include any one of the following locations: the surface of a damaged nerve of the subject, the location of damaged cardiomyocytes of the heart of the subject, the surface of a nerve of the subject in which dysfunction is present. For example, if a subject's facial muscle regulation is impaired, the target location may be the surface of the subject's facial nerve regulating the facial muscle. If the subject has epilepsy, the target location may be the surface of the subject's vagus nerve. If a nerve such as a facial nerve of a subject is damaged, the target location may be the surface of the damaged nerve such as the damaged facial nerve.

In this embodiment, the emission parameters of the laser may also be set correspondingly according to different treatment requirements, and the emission parameters may include: the frequency of each emission relationship, the pulse width, the duration of each emission, and the spacing between different times. For example, assuming the target location is the surface of the vagus nerve, the laser may have a frequency of 0.1Hz-100Hz and a pulse width of 0.1ms-1s, each time lasting for 5s-1min, and may last for a certain number of days once a day until the brain waves are normal or the desired therapeutic effect is achieved. Assuming that the target location is the surface of the damaged nerve, the frequency of the laser may be 0.1Hz-100Hz, and the pulse width may be 0.1ms-1s, and the duration of each time may be 20min-1 hour, and the laser may be continuously performed once a day for a certain number of days (the number of days may be adjusted according to the damage condition and the repair condition of the nerve, for example, may be 1 day-21 days) until the damaged nerve is repaired or repaired to a desired extent. Assuming that the target position is the surface of the nerve to be stimulated, the frequency of the laser can be 0.1Hz-100Hz, the pulse width is 0.1ms-1s, the duration of each time can be 5s-1 h, and the laser can be continuously performed for a certain number of days (the number of days can be adjusted according to the condition of the nerve after being stimulated) once a day until the expected effect of the stimulation is achieved. Assuming that the target location is the surface of a designated myocardial cell and is used for assisting the heart to beat normally when the heart beats abnormally, the frequency of the laser can be 60-120 times per minute, the pulse width is 0.1ms-1s, and the duration of each time can be 5s-1min until the heart beats normally or the expected therapeutic effect is achieved.

To accommodate different therapeutic needs, the implantable device provided herein may have two different implementations, and fig. 6 and 7 respectively show schematic structural views of the implantable device according to an embodiment of the present disclosure. Two different implementations of the implantable device are schematically illustrated below in connection with fig. 6 and 7.

As shown in fig. 6, the implantable device may be a non-portable device in which the optoelectronic device 100 is implanted at a target location within the body of a subject (e.g., a human body). The light source 300 is a light emitting device outside the subject, and can emit laser light to a position of the body surface of the subject corresponding to the photoelectric device 100, and the subject itself or another person (such as a healthcare worker or family member) can adjust the relative position between the light source 300 and the subject. The controller 200 is connected to the light source 300, and is configured to control the light source 300 to emit laser light to the subject according to the set emission parameters, and the laser light passes through the body of the subject and enters the optoelectronic device 100. The non-portable implantable device is suitable for short-term use and may be introduced for use in a hospital or the like where treatment may be provided.

As shown in fig. 7, the implantable device may be a portable wearable device, which may also include an optical fiber 400. The optical fiber 400 is connected between the optoelectronic device 100 and the light source 300 for transmitting the laser light to the optoelectronic device 100. The optoelectronic device 100 is implanted at a target location in the subject, one end of the optical fiber 400 is connected to the optoelectronic device 100, and then the optical fiber 400 is led out from the subject, and the other end is connected to the light source 300. The light source 300 and the controller 200 are outside the subject. In some embodiments, the emission parameters may be preset in the controller 200 of the portable wearable implantable device, and then the controller 200 may control the light source 300 to emit laser light according to the preset emission parameters and irradiate the optoelectronic device 100 in the subject through the optical fiber 400. In some embodiments, the controller 200 of the portable wearable implantable device is further configured to control the light source 300 to emit laser light corresponding to the user operation according to the detected user operation. Wherein the controller 200 is further provided with a trigger button (not shown in the figure), the controller 200 is further configured to determine that the user operation is detected in case that an operation for the trigger button is detected. In this way, the portable wearable implantable device can control the laser emission treatment object according to the set timing and simultaneously can temporarily treat the object based on the operation of a user in an emergency. The emission parameters of the laser emitted by the portable wearable implantable device based on the user operation may also be preset. For example, corresponding to a portable wearable implantable device in which the optoelectronic device 100 is implanted in a heart of a human body, if a patient suffers from heart disease (such as arrhythmia, etc.), the patient and family members may operate the trigger button to cause the optoelectronic device 100 to be irradiated with laser light to assist in beating the heart. The portable wearable implantable device is suitable for scenes needing long-term use, such as epilepsy treatment, heart disease treatment and the like, so that a patient can carry the device, and the influence of the device on the normal life of the patient is reduced.

It should be noted that, although the above embodiments are described as examples of the optoelectronic device, the method of manufacturing the same, and the implantable device as above, those skilled in the art will understand that the present disclosure should not be limited thereto. In fact, the user can flexibly set each step, device and each part of the method according to personal preference and/or practical application scene, so long as the technical scheme of the disclosure is met.

The disclosed embodiments also provide a computer readable storage medium having stored thereon computer program instructions which when executed by a processor implement the steps of the controller described above. The computer readable storage medium may be a volatile or nonvolatile computer readable storage medium.

Embodiments of the present disclosure also provide a computer program product comprising computer readable code, or a non-transitory computer readable storage medium carrying computer readable code, which when executed in a processor of an electronic device, performs the steps of the controller described above.

To further illustrate the effects of the optoelectronic device of the present disclosure, the method for manufacturing the same, and the implantable device, the present disclosure further performs related verification using three different optoelectronic devices, where the three optoelectronic devices are respectively: the first conductive film and the second conductive film shown in fig. 1 and 2 are both Au (shown schematically as Au in the drawing). The first conductive film and the second conductive film having the structures shown in fig. 1 and 2 are both example 2 of Mo (Mo is shown in the drawing). Wherein example 1 differs from example 2 only in the material of the first conductive film and the second conductive film. The structure differs from examples 1 and 2 only in the comparative example without the first conductive film and the second conductive film. The verification performed is described below in order based on example 1, example 2, and comparative example.

And (3) verifying the photoelectric performance characterization:

the photoelectric properties of the three photoelectric devices are characterized by using patch clamp, and fig. 8 is a schematic diagram of the change curve of the photoelectric voltages of the three photoelectric devices along with the light intensity. In fig. 8, the abscissa indicates the light intensity (laser power) and the ordinate indicates the voltage (voltage). Fig. 9 is a schematic diagram of a photocurrent curve of a photovoltaic device for calculating the amount of charge. Fig. 10A shows a schematic diagram of faraday charge amounts of three photoelectric devices. Fig. 10B shows a schematic diagram of the capacitive charge amounts of three optoelectronic devices. Fig. 10C shows a schematic diagram of the amount of injected charge for three optoelectronic devices. It can be seen from the results of fig. 8, 9, and 10A to 10C that:

compared with the silicon-based photoelectric device (comparative example) without metal modification, the silicon-based photoelectric device (example 2) modified by the metal Mo film has greatly improved photoelectric performance, and the silicon-based photoelectric device (example 1) modified by the Au film has improved performance, but is smaller than the device (example 2) modified by Mo. The photocurrents of the three devices were then analyzed to calculate the faraday charge (capacitive charge) and the injected charge (injected charge) of the three devices, and the calculation method is shown in fig. 9. The calculations show that the Mo metal modified photovoltaic device (example 2) has a faraday charge amount, a capacitive charge amount, and a total charge amount that are significantly greater than the remaining two groups of devices.

Characterization of device surface:

fig. 11 shows a schematic of CV curves for three devices. Fig. 12 shows a schematic XPS analysis result of example 2. Fig. 13 shows a schematic view of the surface roughness of three devices.

The Cyclic Voltammetry (CV) characterization (CV curve) was performed on the surfaces of the three devices, and the results shown in fig. 11 were obtained, in which the abscissa represents voltage (potential) and the ordinate represents current (current). It can be seen from fig. 11 that: the surface of the Mo thin film modified device example 2 had an oxidation-reduction reaction, and the specific capacitance of the device was far higher than that of the Au thin film modified device example 1 and the control device according to the curve area.

XPS testing was performed on the surface of the device of example 2 to obtain the results shown in FIG. 12, with binding energy (binding energy) on the abscissa and intensity on the ordinate in FIG. 12. It can be seen from fig. 12 that: mo Metal film modified device example 2 surface Mo ⁶⁺ The formation confirmed the generation of surface redox reactions.

Atomic force microscope characterization of the surfaces of three devices gave the results shown in fig. 13, based on fig. 13: mo thin film and Au thin film modified devices example 2 and example 1 showed significantly improved surface roughness.

Therefore, the oxidation-reduction reaction of the surface of the Mo film modified device example 2 forms a pseudo-capacitor, and the photoelectric efficiency is greatly improved due to the improvement of the surface roughness.

And (3) nerve regulation and control verification:

sciatic nerve regulation:

the Mo film modified photoelectric device example 2 and the Au film modified photoelectric device example 1 were attached to the rat sciatic nerve, and by applying 635nm red pulse laser irradiation, myoelectric signals were recorded on the leg muscles on the same side, and the regulation and control of the rat sciatic nerve were successfully achieved, and fig. 14 shows schematic diagrams of rat sciatic nerve signals detected by the photoelectric devices example 1 and example 2 under different illumination intensities. The abscissa in fig. 14 is the illumination intensity (laser power), and the ordinate is the electromyographic signal amplitude (CMAP amplitude). As shown in fig. 14, in which Mo thin film modified device example 2 stimulated much more efficiently than Au thin film modified device example 1.

Facial nerve modulation in New Zealand rabbits:

mo metal-modified device example 2 was attached to the facial nerve of new zealand rabbits and direct irradiation with 635nm red pulse laser light, an electromyographic signal was recorded on the innervated facial muscle (see fig. 15). The rabbit facial skin was shielded from the device and the electromyographic signals were still recorded on the facial muscles using 635nm red pulse laser through the skin illumination device (fig. 16). Wherein fig. 15 shows a graph of the measured electromyographic signals of a direct illumination example 2 device. Fig. 16 shows a graph of electromyographic signals measured by illuminating the example 2 device through the skin. The ordinate in fig. 15 and 16 is the electromyographic signal amplitude (CMAP amplitude). Then referring to fig. 15 and 16, it can be seen that examples 1 and 2 have the capability of percutaneous wireless regulation of peripheral nerves.

And (3) nerve repair verification:

device example 2, mo film modified device was implanted at the nerve injury site after facial nerve manufacturing clamp injury, after surgical stapling, multi groups were irradiated with 635nm laser light for 1 hour per day for 4 days continuously. single group was irradiated only 1 hour post-operatively. No device is added after the control group is damaged, and the natural growth is carried out. The WT group is the natural state change of normal nerves.

Fig. 17A, 17B, and 17C show sections of nerve tissue from different groups 8 weeks after surgery, respectively. Fig. 18 shows a graph comparing the magnitudes of the electromyographic signals 8 weeks after the different groups of operations. Fig. 19 shows a graph comparing the delay time of the 8-week myoelectric signal after the operation of the different groups. Wherein, the ordinate of fig. 18 is the electromyographic signal amplitude (CMAP amplitude), and the ordinate of fig. 19 is the delay (latency).

Then, as shown in fig. 17A-17B, fig. 18 and fig. 19, the regenerated nerve tissue is obtained, sectioned and stained 8 weeks after the operation, and the result shows that the schwann cells in the nerve bundles of the Multi group are obviously more than the other two groups, the myelination is basically realized, the single group is inferior, and the control group is worst. The measurement of the myoelectric signals shows that the Multi-group myoelectric signals are very close to those on the normal side. Photoelectric stimulation of damaged nerves using Mo device example 2 can significantly accelerate nerve regeneration.

From the above verification, the photoelectric device provided by the present disclosure has a remarkable effect of being implanted into a subject for nerve treatment.

The foregoing description of the embodiments of the present disclosure has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the various embodiments described. The terminology used herein was chosen in order to best explain the principles of the embodiments, the practical application, or the technical improvements in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.

Claims

1. A method of manufacturing an optoelectronic device, comprising:

preparing a first conductive film above the PN junction film;

2. The method according to claim 1, wherein the method further comprises:

depositing a second conductive film on the flexible substrate;

and etching the second conductive film according to a preset shape.

3. The method of claim 1, wherein transferring the PN junction film covered with the first conductive film onto the first side of the flexible substrate results in the optoelectronic device comprising:

4. The method of claim 1, wherein the material of the flexible substrate is a flexible, light transmissive material; the first conductive film and the second conductive film are made of the same material, the first conductive film and the second conductive film are metal conductive films, and the material of the metal conductive films comprises molybdenum or gold.

5. The method of claim 4, wherein the predetermined shape comprises an array shape, a predetermined pattern shape;

6. An optoelectronic device, comprising: a PN junction film, a first conductive film, a second conductive film and a flexible substrate,

the first conductive film covers one surface of the PN junction film;

wherein the optoelectronic device is manufactured based on the method of any one of claims 1-5.

7. An implantable device, comprising: an optoelectronic device, a light source and a controller,

8. The apparatus as recited in claim 7, further comprising: the optical fiber is used as a fiber-optic cable,

the implantable device is a portable wearable device.

9. The apparatus of claim 7, wherein the device comprises a plurality of sensors,

the controller is also used for controlling the light source to emit laser corresponding to the user operation according to the detected user operation.

10. The apparatus of claim 9, wherein the device comprises a plurality of sensors,

the controller is further provided with a trigger button, and is further used for determining that the user operation is detected when the operation for the trigger button is detected.