CN116219531A - Production method and application of low-oxygen-content 12-inch silicon rod - Google Patents
Production method and application of low-oxygen-content 12-inch silicon rod Download PDFInfo
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- CN116219531A CN116219531A CN202310222633.6A CN202310222633A CN116219531A CN 116219531 A CN116219531 A CN 116219531A CN 202310222633 A CN202310222633 A CN 202310222633A CN 116219531 A CN116219531 A CN 116219531A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a production method and application of a low-oxygen content 12 inch silicon rod, comprising the following steps: s1, a material melting stage; s2, a welding stage; s3, seeding; s4, shoulder placing; s5, shoulder turning stage; s6, an isodiametric stage; s7, ending, wherein in S1, the crucible rotates at 1 crucible pressure of 1.5KPa; s2, rotating a crucible 6 crucible, wherein the furnace pressure is 1.5KPa; s3, rotating a crucible 6 crucible, wherein the furnace pressure is 1.5KPa; s4, rotating a crucible 6 crucible, wherein the furnace pressure is 1.5KPa; s5, rotating a crucible 6 crucible, wherein the furnace pressure is 1.5KPa; s6, starting to rotate the crucible 6 crucible, gradually changing the crucible rotation into 9.5 crucible rotation, and enabling the furnace pressure to be 1.5KPa; in S7, the crucible is rotated by 9.5 crucible speed and the furnace pressure is 1.5KPa. The invention realizes that the average value of the oxygen content of a 12 inch monocrystalline silicon rod is controlled below 14ppm in a 36 inch large thermal field through the cooperative improvement of crucible rotation and furnace pressure parameters.
Description
Technical Field
The invention belongs to the technical field of monocrystalline silicon, and particularly relates to a production method of a low-oxygen-content 12-inch silicon rod, a silicon wafer and a solar photovoltaic module.
Background
In the CZ method growth, oxygen is inevitably incorporated into the silicon single crystal. The route is that oxygen is fused from a quartz (SiO 2) crucible into a silicon melt and the fused oxygen is transported to the crystal-melt interface or free surface via convection and diffusion of the melt. Most of the oxygen in the melt evaporates at the free surface of the melt, while the remaining oxygen is incorporated into the crystal by segregation at the crystal-melt interface.
The too high oxygen content of the crystal bar can cause the increase of the concentric circle proportion of the silicon wafer, and seriously affects the conversion efficiency of the rear-end solar photovoltaic module. Therefore, how to reduce the oxygen content of single crystal silicon rods, especially large size silicon rods, is a problem that each solar photovoltaic enterprise needs to face and solve.
The larger the thermal field size, the larger the quartz crucible size used and the larger the contact area of the silicon melt with the quartz crucible. Because the single crystal growth is carried out in a high-temperature environment higher than 1400 ℃, the larger the quartz crucible size is, the faster the silicon and quartz crucible reaction speed is, the more oxygen is generated, the precipitated oxygen adheres to the molten silicon melt and enters the silicon single crystal from the single crystal growth interface and adheres to the crystal lattice of the silicon single crystal to form oxygen impurities, and the more oxygen impurities in the crystal lattice of the silicon single crystal are, the higher the oxygen content of the crystal rod is.
Along with the increasing requirements of industries on the quality of single crystal rods, the oxygen content standard of the single crystal rod heads is continuously updated, the current industry shipment standard is less than or equal to 14ppma, and the oxygen content of the 12 inch single crystal rod heads produced by 36 inch large thermal fields is about 16ppma, which is far higher than the industry shipment standard. In order to improve the quality of the crystal bar and reduce the complaint rate of customers, the implementation of oxygen reduction measures is urgent.
The commonly used oxygen reducing measures at present include oxygen reducing ring, changing the structure of a heater for reducing oxygen and the like, but the oxygen reducing measures do not receive better oxygen reducing effect, the oxygen content of the grown monocrystalline silicon rod is still higher, and the oxygen content of a 12 inch monocrystalline rod head produced by a 36 inch large thermal field is about 16 ppma.
Disclosure of Invention
Aiming at the defects, the invention provides a production method of a low-oxygen-content 12 inch silicon rod, which realizes that the average value of the oxygen content of the 12 inch single crystal silicon rod is controlled below 14ppm in a 36 inch large thermal field through the cooperative improvement of crucible rotation and furnace pressure parameters.
A method for producing a silicon rod with low oxygen content of 12 inches, which comprises the following steps:
s1, a material melting stage; s2, a welding stage; s3, seeding; s4, shoulder placing; s5, shoulder turning stage; s6, an isodiametric stage; s7, ending, wherein in S1, the crucible rotates at 1 crucible pressure of 1.5KPa; s2, rotating a crucible 6 crucible, wherein the furnace pressure is 1.5KPa; s3, rotating a crucible 6 crucible, wherein the furnace pressure is 1.5KPa; s4, rotating a crucible 6 crucible, wherein the furnace pressure is 1.5KPa; s5, rotating a crucible 6 crucible, wherein the furnace pressure is 1.5KPa; s6, starting to rotate the crucible 6 crucible, gradually changing the crucible rotation into 9.5 crucible rotation, and enabling the furnace pressure to be 1.5KPa; in S7, the crucible is rotated by 9.5 crucible speed and the furnace pressure is 1.5KPa.
A method for producing a silicon rod with low oxygen content of 12 inches, which comprises the following steps:
s1, a material melting stage; s2, a welding stage; s3, seeding; s4, shoulder placing; s5, shoulder turning stage; s6, an isodiametric stage; s7, ending, wherein in S1, a crucible 1 rotates and the furnace pressure is 2KPa; s2, rotating a crucible 5 crucible, and performing furnace pressure 2KPa; s3, rotating a crucible 5 crucible, and performing furnace pressure 2KPa; s4, rotating a crucible 5 crucible, and performing furnace pressure 2KPa; s5, rotating a crucible 5 crucible, and performing furnace pressure 2KPa; s6, starting to enable the crucible to rotate 5 crucible to gradually change into 9 crucible rotation and the furnace pressure to be 2KPa; s7, rotating the crucible 9.5 crucible, and carrying out furnace pressure of 2KPa.
A method for producing a silicon rod with low oxygen content of 12 inches, which comprises the following steps:
s1, a material melting stage; s2, a welding stage; s3, seeding; s4, shoulder placing; s5, shoulder turning stage; s6, an isodiametric stage; s7, in the ending stage, in S1, a crucible 1 rotates, and the furnace pressure is 1.5KPa; s2, rotating a crucible 5 crucible, wherein the furnace pressure is 1.5KPa; s3, rotating a crucible 5 crucible, wherein the furnace pressure is 1.5KPa; s4, rotating a crucible 5 crucible, wherein the furnace pressure is 1.5KPa; s5, rotating the crucible 5 crucible, wherein the furnace pressure is 1.5KPa; s6, starting to change the 5 crucible rotation into 9 crucible rotation gradually, wherein the furnace pressure is 1.5KPa; in S7, the crucible 9 rotates and the furnace pressure is 1.5KPa.
Alternatively, the low oxygen content 12 inch silicon rod is produced in a 36 inch large thermal field.
Optionally, the quartz crucible has an outer diameter of 944mm and a height of 650mm; the power of the main heater in the melting stage is 105KW, the power of the bottom heater is 80KW, the bottom heater is closed after the silicon material is completely melted, and the main power is kept at 85KW; the main power is automatically adjusted according to the brightness of the molten silicon liquid level in the welding stage, and the power adjustment range is 80KW-100KW; the main power in the seeding stage is maintained at 73KW, fine crystals are extracted through seed crystal seeds, dislocation is eliminated, and the length of the fine crystals is about 200mm-300mm; the power of the shouldering stage is reduced by 13-14KW, so that the monocrystalline silicon transversely grows to a target diameter, and the large-size monocrystalline silicon has the target diameter of 300mm; the shoulder turning stage enables the transverse diameter of the monocrystalline silicon to grow into a longitudinal growth state, and the power of the shoulder placing tail end is kept unchanged; the power is basically kept unchanged in the constant diameter stage, so that monocrystalline silicon grows stably, the pulling speed is gradually increased from low to high until the pulling speed reaches the peak pulling speed which is about 1000mm in length, and then the pulling speed is kept constant to grow to end; and in the ending stage, in order to minimize the occurrence of dislocation, the diameter of the single crystal grown in the equal diameter is reduced.
The invention also improves a silicon rod with low oxygen content of 12 inches.
A low oxygen content 12 inch silicon rod, which is characterized in that the low oxygen content 12 inch silicon rod is prepared by the production method.
Optionally, the 12 inch silicon rod has an oxygen content of <14ppm.
The invention also provides a silicon wafer.
A silicon wafer made from the low oxygen 12 inch silicon rod described above.
The invention further provides a solar photovoltaic module.
A solar photovoltaic module is prepared from the silicon wafer.
The invention realizes that the average value of the oxygen content of a 12 inch monocrystalline silicon rod is controlled below 14ppm in a 36 inch large thermal field by the cooperative improvement of crucible rotation and furnace pressure parameters, and meets the oxygen content requirement of the standard monocrystalline silicon rod.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief description will be given below of the drawings that are needed in the embodiments or the prior art descriptions, it being obvious that the drawings in the following description are some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort to a person skilled in the art.
FIG. 1 is a schematic diagram comparing the oxygen content of the present invention with the prior art.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
The technical scheme of the invention is described in detail below by specific examples. The following embodiments may be combined with each other and may not be described in detail in certain implementations for the same or similar concepts or processes.
In the following examples and comparative examples, a 1600-type single crystal furnace was used, a 36-inch quartz crucible was used in the thermal field, the outside diameter of the quartz crucible was 944mm, the height of the quartz crucible was 650mm, the maximum time the crucible was 400 hours, the maximum charge amount per time was 900kg, multiple re-charging was possible, and the maximum number of drawn rods was 7 rods.
And (3) material melting: setting the power of the main heater to 105KW and the power of the bottom heater to 80KW, closing the bottom heater after the silicon material is completely melted, and keeping the main power to 85KW.
Welding: and automatically adjusting main power according to the brightness of the molten silicon liquid level, wherein the power adjustment range is 80KW-100KW.
And (3) seeding: the main power is maintained at 73KW, fine crystals are led out through seed crystal seed, dislocation is eliminated, and the length of the fine crystals is about 200mm-300mm.
Shoulder placing stage: the power is reduced by about 13-14KW, so that the monocrystalline silicon transversely grows to the target diameter, and the target diameter of the large-size monocrystalline silicon is 300mm.
Shoulder turning stage: the transverse diameter of the monocrystalline silicon is changed into a longitudinal growth state, and the power of the shoulder tail end is kept unchanged.
And (3) an isodiametric stage: the power is basically kept unchanged, so that the monocrystalline silicon grows stably, the pulling speed is gradually increased from low to high until the pulling speed reaches the peak pulling speed with the length of about 1000mm, and then the pulling speed is kept constant to grow to the ending.
And (3) ending stage: to minimize the occurrence of dislocations, the diameter of the equal-diameter grown single crystal is reduced.
Example 1
A method for producing a silicon rod with low oxygen content of 12 inches in a 36 inches large thermal field, which comprises the following steps:
s1, a material melting stage: the crucible rotates 1 crucible, and the furnace pressure is 1.5KPa.
S2, welding stage: the crucible is rotated by 6 crucible revolutions, and the furnace pressure is 1.5KPa.
S3, seeding stage: the crucible is rotated by 6 crucible revolutions, and the furnace pressure is 1.5KPa.
S4, shoulder placing: the crucible is rotated by 6 crucible revolutions, and the furnace pressure is 1.5KPa.
S5, shoulder turning stage: the crucible is rotated by 6 crucible revolutions, and the furnace pressure is 1.5KPa.
S6, an isodiametric stage: the crucible is turned into a crucible with a temperature of 6 ℃ and gradually changed into a crucible with a temperature of 9.5 ℃ and a furnace pressure of 1.5KPa.
S7, ending stage: the crucible is rotated by 9.5 crucible rotation, and the furnace pressure is 1.5KPa.
Example 2
A method for producing a silicon rod with low oxygen content of 12 inches in a 36 inches large thermal field, which comprises the following steps:
s1, a material melting stage: the crucible rotates 1 crucible, and the furnace pressure is 2KPa.
S2, welding stage: the crucible is rotated by 5 crucible and the furnace pressure is 2KPa.
S3, seeding stage: the crucible is rotated by 5 crucible and the furnace pressure is 2KPa.
S4, shoulder placing: the crucible is rotated by 5 crucible and the furnace pressure is 2KPa.
S5, shoulder turning stage: the crucible is rotated by 5 crucible and the furnace pressure is 2KPa.
S6, an isodiametric stage: starting to change the crucible rotation of the crucible 5 into 9 gradually; furnace pressure 2KPa.
S7, ending stage: the crucible is rotated by 9.5 crucible and the furnace pressure is 2KPa.
Example 3
A method for producing a silicon rod with low oxygen content of 12 inches in a 36 inches large thermal field, which comprises the following steps:
s1, a material melting stage: the crucible rotates 1 crucible, and the furnace pressure is 1.5KPa.
S2, welding stage: the crucible is rotated 5 crucible times, and the furnace pressure is 1.5KPa.
S3, seeding stage: the crucible rotates 5 crucible times, and the furnace pressure is 1.5KPa.
S4, shoulder placing: the crucible rotates 5 crucible times, and the furnace pressure is 1.5KPa.
S5, shoulder turning stage: the crucible rotates 5 crucible times, and the furnace pressure is 1.5KPa.
S6, an isodiametric stage: the rotation of the 5 crucible is gradually changed into 9 crucible rotation; the furnace pressure was 1.5KPa.
S7, ending stage: the crucible 9 rotates and the furnace pressure is 1.5KPa.
Comparative example 1 (this example is a process for producing a 12 inch silicon rod in a 36 inch high thermal field prior to modification)
A method for producing a 12 inch silicon rod in a 36 inch large thermal field, comprising the following steps:
s1, a material melting stage: the crucible rotates 1 crucible, and the furnace pressure is 2KPa.
S2, welding stage: the crucible is rotated by 6 crucible and the furnace pressure is 2KPa.
S3, seeding stage: the crucible is rotated by 6 crucible and the furnace pressure is 2KPa.
S4, shoulder placing: the crucible is rotated by 6 crucible and the furnace pressure is 2KPa.
S5, shoulder turning stage: the crucible is rotated by 6 crucible and the furnace pressure is 2KPa.
S6, an isodiametric stage: starting to change the crucible rotation of the crucible 6 into 9.5 crucible rotation gradually; furnace pressure 2KPa.
S7, ending stage: the crucible is rotated by 9.5 crucible and the furnace pressure is 2KPa.
The 12 inch silicon rod production process of examples 1-3 was tested in applicant's H zone to produce 12 inch silicon rods, which were compared with the 12 inch silicon rods produced by the 12 inch silicon rod production process of comparative example 1 under the same 36 inch large thermal field, the same production equipment, etc., and the oxygen content measurements are shown in table 1 and fig. 1 (fig. 1 is example 3 and comparative example 1).
In the description of the present invention, it should be noted that, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, indirectly connected through an intermediary, or may be in communication with each other between two elements or in an interaction relationship between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the description of the present invention, it should be understood that the terms "upper," "lower," "front," "rear," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate description of the present invention and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. In the description of the present invention, the meaning of "a plurality" is two or more, unless specifically stated otherwise.
The terms "first," "second," "third," "fourth" and the like in the description and in the claims of this application and in the above-described figures, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the present application described herein may be capable of operation in sequences other than those illustrated or described herein, for example. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (7)
1. A method for producing a silicon rod with low oxygen content of 12 inches, which comprises the following steps:
s1, a material melting stage; s2, a welding stage; s3, seeding; s4, shoulder placing; s5, shoulder turning stage; s6, an isodiametric stage; s7, ending, wherein in S1, the crucible rotates at 1 crucible pressure of 1.5KPa; s2, rotating a crucible 6 crucible, wherein the furnace pressure is 1.5KPa; s3, rotating a crucible 6 crucible, wherein the furnace pressure is 1.5KPa; s4, rotating a crucible 6 crucible, wherein the furnace pressure is 1.5KPa; s5, rotating a crucible 6 crucible, wherein the furnace pressure is 1.5KPa; s6, starting to rotate the crucible 6 crucible, gradually changing the crucible rotation into 9.5 crucible rotation, and enabling the furnace pressure to be 1.5KPa; s7, rotating a crucible 9.5 crucible, wherein the furnace pressure is 1.5KPa; or (b)
S1, rotating a crucible 1, and performing furnace pressure 2KPa; s2, rotating a crucible 5 crucible, and performing furnace pressure 2KPa; s3, rotating a crucible 5 crucible, and performing furnace pressure 2KPa; s4, rotating a crucible 5 crucible, and performing furnace pressure 2KPa; s5, rotating a crucible 5 crucible, and performing furnace pressure 2KPa; s6, starting to enable the crucible to rotate 5 crucible to gradually change into 9 crucible rotation and the furnace pressure to be 2KPa; s7, rotating a crucible 9.5, wherein the furnace pressure is 2KPa; or (b)
S1, rotating a crucible 1, wherein the furnace pressure is 1.5KPa; s2, rotating a crucible 5 crucible, wherein the furnace pressure is 1.5KPa; s3, rotating a crucible 5 crucible, wherein the furnace pressure is 1.5KPa; s4, rotating a crucible 5 crucible, wherein the furnace pressure is 1.5KPa; s5, rotating the crucible 5 crucible, wherein the furnace pressure is 1.5KPa; s6, starting to change the 5 crucible rotation into 9 crucible rotation gradually, wherein the furnace pressure is 1.5KPa; in S7, the crucible 9 rotates and the furnace pressure is 1.5KPa.
2. The method of claim 1, wherein the low-oxygen 12 inch silicon rod is produced in a 36 inch large thermal field.
3. The method for producing a 12 inch silicon rod with low oxygen content according to any one of claims 1 to 2, wherein the quartz crucible has an outer diameter of 944mm and a height of 650mm; the power of the main heater in the melting stage is 105KW, the power of the bottom heater is 80KW, the bottom heater is closed after the silicon material is completely melted, and the main power is kept at 85KW; the main power is automatically adjusted according to the brightness of the molten silicon liquid level in the welding stage, and the power adjustment range is 80KW-100KW; the main power in the seeding stage is maintained at 73KW, fine crystals are extracted through seed crystal seeds, dislocation is eliminated, and the length of the fine crystals is about 200mm-300mm; the power of the shouldering stage is reduced by 13-14KW, so that the monocrystalline silicon transversely grows to a target diameter, and the large-size monocrystalline silicon has the target diameter of 300mm; the shoulder turning stage enables the transverse diameter of the monocrystalline silicon to grow into a longitudinal growth state, and the power of the shoulder placing tail end is kept unchanged; the power is basically kept unchanged in the constant diameter stage, so that monocrystalline silicon grows stably, the pulling speed is gradually increased from low to high until the pulling speed reaches the peak pulling speed which is about 1000mm in length, and then the pulling speed is kept constant to grow to end; and in the ending stage, in order to minimize the occurrence of dislocation, the diameter of the single crystal grown in the equal diameter is reduced.
4. A low oxygen content 12 inch silicon rod, wherein the low oxygen content 12 inch silicon rod is produced by the production method of any one of claims 1 to 3.
5. The low oxygen 12 inch silicon rod of claim 4, wherein the 12 inch silicon rod has an oxygen content of <14ppm.
6. A silicon wafer made from the low oxygen 12 inch silicon rod of any one of claims 4 to 5.
7. A solar photovoltaic module characterized in that the silicon wafer is made of the silicon wafer of claim 6.
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| CN202310222633.6A CN116219531A (en) | 2023-03-09 | 2023-03-09 | Production method and application of low-oxygen-content 12-inch silicon rod |
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| CN202310222633.6A CN116219531A (en) | 2023-03-09 | 2023-03-09 | Production method and application of low-oxygen-content 12-inch silicon rod |
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