CN116207166B - Integrated configurable ultra-high circular polarization extinction ratio photoelectric detector and preparation method thereof - Google Patents
Integrated configurable ultra-high circular polarization extinction ratio photoelectric detector and preparation method thereof Download PDFInfo
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Abstract
The invention discloses an integrated configurable ultra-high circular polarization extinction ratio photoelectric detector and a preparation method thereof. The device comprises a metal reflecting layer, a dielectric layer, an electrode layer and a two-dimensional material layer; the electrode layer comprises Z-shaped metal optical antenna arrays which are integrated with the source electrode and the drain electrode respectively and are of opposite chirality; the device works in a zero bias state, and the photoresponse is from photovoltaic effect, hot electron injection, photo-thermal effect and the like induced by a Schottky junction formed by a source electrode, a drain electrode and a two-dimensional material; by moving the intensity ratio of the incident light received by the two groups of optical antenna arrays at the position of the incident light spot configuration source and the drain electrode, the source and the drain electrodes can generate photocurrents with equal size and opposite directions under the optical rotation irradiation of any specific rotation direction, so that the net output photocurrent is zero, and the noise is reduced by 1 to 2 orders of magnitude; and the photocurrent is stably output under the optical rotation irradiation of the other rotation direction. The invention has ultrahigh resolution capability of circularly polarized light in a certain wavelength range.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to an integrated configurable ultra-high circular polarization extinction ratio photoelectric detector and a preparation method thereof.
Background
Polarization is a major physical quantity of light, and almost all optical science and technology are of interest for polarization. Efficient polarization detection with miniaturized devices has been a goal sought after. On-chip polarization detectors have been a very promising development. In addition to linear polarization detection, detection of circular polarization (or optical ellipticity) is essential for fields such as chiral molecule recognition, magnetic field sensing, quantum communication, and cryptography.
The complexity and size of light ellipticity detectors is evident by the conventional solutions relying on external optical systems comprising polarizers and wave plates. Although supersurfaces as planar optics can potentially reduce the footprint of the light ellipticity detector by replacing conventional polarizers or waveplates, the problems of energy loss and alignment difficulties cannot be avoided. Although some studies have proposed materials with circular dichroism or circular photocurrent effects for light ellipticity detection without optical lenses. However, these materials are not common and their light ovality discrimination capability is quite low. In this case, the direct integration of the plasma chiral structure with the photodetecting material to achieve a compact photo-ellipsometry detector is a attractive, in-depth direction. The integrated plasma chiral structure not only provides circular polarization resolution, but also enhances the absorption of the detection material by the enhanced local field. However, the biggest problem is insufficient light ellipticity discrimination. The Circular Polarization Extinction Ratio (CPER) is defined as the ratio of the optical response of a photodetector operating at incidence with circularly polarized light of two different handedness, which is greater than 1. For conventional circular polarizers, this parameter is typically above 1000 but CPER for a super-surface device or detector made using materials of circular dichroism or circular photocurrent effect alone is typically below 5, so that the circularly polarized light response to non-target handedness cannot be effectively suppressed.
Disclosure of Invention
The invention aims to provide an integrated configurable ultra-high circular polarization extinction ratio photoelectric detector and a preparation method thereof, so as to solve the problem of low circular polarization extinction ratio of on-chip circular polarization detection.
In order to achieve the above object, the present invention provides the following solutions:
an integrated configurable ultra-high circular polarization extinction ratio photodetector comprising: a bottom substrate layer, a metal reflecting layer, a dielectric layer, an electrode layer and a two-dimensional material layer from bottom to top; the electrode layer and the two-dimensional material layer can be arranged in opposite up-down sequence; the electrode layer comprises a metal two-dimensional chiral metamaterial integrated on the source electrode and a metal two-dimensional chiral metamaterial integrated on the drain electrode, which are symmetrically arranged; the metal two-dimensional chiral metamaterial integrated on the source electrode and the metal two-dimensional chiral metamaterial integrated on the drain electrode are Z-shaped metal optical antenna arrays with opposite chiral structures;
when the integrated configurable ultra-high circular polarization extinction ratio photoelectric detector works in a zero bias state, the light response comes from the photovoltaic effect, the hot electron injection and the photo-thermal effect induced by a Schottky junction formed by source electrode metal, drain electrode metal and a two-dimensional material; the source electrode and the drain electrode are configured by moving an incident light spot, the intensity ratio of the incident light of the two Z-shaped metal optical antenna arrays at the source electrode and the drain electrode is changed, and under the irradiation of any specific rotation direction, the source electrode and the drain electrode generate photocurrents with the same size and opposite directions, so that the net photocurrent output by the photoelectric detector is zero, and the noise is reduced by 1 to 2 orders of magnitude; and under the optical rotation irradiation of the other rotation direction, the photoelectric detector continuously and stably outputs photocurrent.
Optionally, the bottom substrate layer is a support layer of the photodetector;
the material of the bottom substrate layer is a semiconductor process base material; the semiconductor process substrate material includes a silicon material, a gallium arsenide material, and a gallium nitride material.
Optionally, the thickness of the metal reflecting layer is not less than twice the skin depth of the electromagnetic wave in the metal reflecting layer.
Optionally, the dielectric layer is a medium with a transparent working band;
the dielectric layer has a thickness less than a quarter of the detection wavelength.
Optionally, the electrode layer specifically includes: a source electrode, a drain electrode and a metal two-dimensional chiral metamaterial;
the source electrode and the drain electrode are symmetrically arranged; a channel is arranged between the source electrode and the drain electrode;
the metal two-dimensional chiral metamaterial is integrated on the source electrode and the drain electrode respectively.
Optionally, the two-dimensional material is disposed on the metal two-dimensional chiral metamaterial, and the two-dimensional material is used for crossing the channel and electrically connecting the source electrode and the drain electrode.
Optionally, the thickness of the electrode layer is not less than twice the skin depth of the electromagnetic wave in the electrode layer.
A preparation method of an integrated configurable ultra-high circular polarization extinction ratio photoelectric detector comprises the following steps:
growing a metal reflecting layer on the bottom substrate layer by using electron beam evaporation or thermal evaporation technology;
growing a dielectric layer on the surface of the metal reflecting layer by using atomic layer deposition, electron beam evaporation and magnetron sputtering;
defining a pattern on the surface of the dielectric layer by using an electron beam lithography technology, depositing metal by using an electron beam evaporation technology, and obtaining a required electrode layer by using a stripping technology; the electrode layer comprises a metal two-dimensional chiral metamaterial integrated on the source electrode and a metal two-dimensional chiral metamaterial integrated on the drain electrode, which are symmetrically arranged; the metal two-dimensional chiral metamaterial integrated on the source electrode and the metal two-dimensional chiral metamaterial integrated on the drain electrode are Z-shaped metal optical antenna arrays with opposite chiral structures;
obtaining the two-dimensional material from a single crystal sample by using a mechanical stripping method or obtaining the two-dimensional material by using a growth means, and transferring the two-dimensional material onto the electrode layer by using a dry transfer technique, and electrically connecting the source electrode and the drain electrode across a channel between the source electrode and the drain electrode; the growth means includes chemical vapor deposition and physical vapor deposition.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects: the invention provides an integrated configurable ultra-high circular polarization extinction ratio photoelectric detector and a preparation method thereof, when the integrated configurable ultra-high circular polarization extinction ratio photoelectric detector works in a zero bias state, the light response is from the photovoltaic effect, the hot electron injection and the photo-thermal effect induced by a Schottky junction formed by source electrode metal, drain electrode metal and a two-dimensional material; the source electrode and the drain electrode are configured by moving the incident light spots, so that the intensity ratio of the incident light of the two Z-shaped metal optical antenna arrays at the source electrode and the drain electrode is configured, and when the source electrode and the drain electrode are irradiated by optical rotation in a certain direction, photocurrents with equal and opposite directions are generated by the source electrode and the drain electrode and are mutually counteracted, thereby enabling the net photocurrent output by the integral detector to be zero, and reducing the noise by 1 to 2 orders of magnitude. Under the optical rotation irradiation in the other direction, the photocurrent generated by one end electrode is larger than that generated by the other end electrode, the whole detector continuously and stably outputs a certain photocurrent, the detector shows ultrahigh circularly polarized light resolution capability, and ultrahigh extinction ratio is obtained in a proper wavelength range.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a photodetector according to the present invention;
FIG. 2 is a side view of the XZ plane of the photodetector structure provided by the present invention;
FIG. 3 is a top view of a photodetector structure according to the present invention;
FIG. 4 is a schematic diagram of a structure of a Z-type metal optical antenna unit for selectively responding to left rotation in the photodetector according to the present invention;
FIG. 5 is a graph of the left and right optical rotation absorption spectra of a Z-type metal optical antenna array selectively responsive to left optical rotation in a photodetector provided by the present invention;
FIG. 6 is a graph of the left and right optical rotation optical response of a Z-type metal optical antenna array selectively responsive to left optical rotation in a photodetector provided by the invention;
FIG. 7 is a plot of CPER versus detected light wavelength for a Z-type metal optical antenna array selectively responsive to left hand rotation in a photodetector provided by the present invention;
FIG. 8 is a graph of photocurrent versus 1/2 wave plate rotation angle for a photodetector configured for left hand optical rotation selection response operating at a wavelength of 1550nm according to the present invention.
Symbol description:
a bottom substrate layer 1, a metal reflecting layer 2, a dielectric layer 3, an electrode layer 4 and a two-dimensional material layer 5.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide an integrated configurable ultra-high circular polarization extinction ratio photoelectric detector and a preparation method thereof, which have ultra-high circular polarization resolution capability and can obtain ultra-high extinction ratio in a proper wavelength range.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
As shown in fig. 1-4, an integrated configurable ultra-high circular polarization extinction ratio photodetector, comprising: a bottom substrate layer 1, a metal reflecting layer 2, a dielectric layer 3, an electrode layer 4 and a two-dimensional material layer 5 from bottom to top; wherein the electrode layer 4 and the two-dimensional material layer 5 can be arranged in opposite order; the electrode layer 4 comprises a metal two-dimensional chiral metamaterial integrated on the source electrode and a metal two-dimensional chiral metamaterial integrated on the drain electrode, which are symmetrically arranged; the metal two-dimensional chiral metamaterial integrated on the source electrode and the metal two-dimensional chiral metamaterial integrated on the drain electrode are Z-shaped metal optical antenna arrays with opposite chiral structures; when the integrated configurable ultra-high circular polarization extinction ratio photoelectric detector works in a zero bias state, the light response comes from the photovoltaic effect, the hot electron injection and the photo-thermal effect induced by a Schottky junction formed by source electrode metal, drain electrode metal and a two-dimensional material; the source electrode and the drain electrode are configured by moving an incident light spot, the intensity ratio of the incident light of the two Z-shaped metal optical antenna arrays at the source electrode and the drain electrode is changed, and under the irradiation of any specific rotation direction, the source electrode and the drain electrode generate photocurrents with the same size and opposite directions, so that the net photocurrent output by the photoelectric detector is zero, and the noise is reduced by 1 to 2 orders of magnitude; and under the optical rotation irradiation of the other rotation direction, the photoelectric detector continuously and stably outputs photocurrent.
In practical application, the thickness is h 0 The bottom substrate layer 1 of the device is a support layer of the device and its materials include, but are not limited to, silicon materials, gallium arsenide materials, gallium nitride materials, and other conventional semiconductor process base materials.
The metal reflecting layer 2 has a thickness h 1 Is a complete metal reflective layer 2,h of (a) 1 Not less than twice the skin depth of the electromagnetic wave in the metal. The material is a metal with high conductivity, including but not limited to gold, silver, aluminum or alloys thereof.
The dielectric layer 3 has a thickness h 2 Transparent medium for the operating band of (a) including but not limited to Al 2 O 3 、SiO 2 、MgF 2 、ZnS、HfO 2 And the thickness h of 2 Less than a quarter of the detection wavelength.
The electrode layer 4 has a thickness h 3 Including but not limited to gold, silver, aluminum or alloys thereof, h 3 Not less than twice the skin depth of the electromagnetic wave in the metal. Wherein, mutually opposite chiral junctions are respectively integrated in the source electrode region and the drain electrode regionZ-shaped metal optical antenna with unit structure passing through P x (monocycle Length in x-direction), P y (monocycle Length in y-direction), L 1 (length of air medium smaller than period length range in single period in x direction), L 2 (length of air Medium less than Metal Length Range in one cycle in y-direction) and L 3 (length of metal in one cycle in y direction) determining its size, wherein L 2 <L 3 ，L 3 Is P y One quarter to one half of L 1 <P x /2. The left and right sides of the Z-shaped metal optical antenna area with chirality are respectively connected with the source electrode and the drain electrode, and the channel width between the two areas is d, and the value of the channel width is not more than 4 mu m. The electrode layer 4 is a source electrode layer and a drain electrode layer integrated by metal two-dimensional chiral metamaterials.
The two-dimensional material layer 5 is a material with atomic-level longitudinal dimension, including but not limited to two-dimensional semiconductor, two-dimensional semi-metallic material, which is bonded by van der Waals force between layers, without dangling bonds. Classes include, but are not limited to Graphene, hBN, moS 2 、blackphosphorus、WS 2 Etc.
In addition, in this structure, the order of the electrode layer 4 and the two-dimensional material layer 5 is not fixed, and the electrode layer 4 may be above the two-dimensional material.
For a chiral Z-type metal optical antenna, under the irradiation of the optical rotation of a target to be detected, the Z-type metal optical antenna excites a surface plasmon polariton mode in the vicinity of the metal optical antenna, and most of incident light is efficiently coupled into the surface plasmon polariton mode. For non-target optical rotation, the surface plasmon polariton mode near the metal optical antenna cannot be effectively excited, and the optical field in the composite structure is very limited. Thus, when the optical field of the target rotation is localized near the metallic chiral optical antenna, the optical field at the two-dimensional material is enhanced and the response rate of the detector is improved.
When the detection mode of the detector is a self-driven response mode such as hot electron injection, photovoltaic response and the like, the source electrode and the drain electrode can generate photocurrent in a specific direction under the condition of excitation of a light source. By using a Z-shaped metal optical antenna with the local area of the source electrode having chiral symmetry with the drain electrode, the source electrode can absorb the rotation of the characteristic absorbed by the drain electrode in the opposite direction and generate the directional photocurrent in the opposite direction to the drain electrode.
By configuring the optical power distribution (CPER depending on a single-side Z-shaped metal optical antenna array) of the source electrode and the drain electrode, the photocurrents generated by the source electrode and the drain electrode in opposite directions cancel each other under the irradiation of optical rotation in a certain direction, and the photocurrent output by the whole detector is reduced to be close to 0. Under the optical rotation irradiation in the other direction, the photocurrent generated by one end electrode is larger than that generated by the other end electrode, the photocurrent output by the whole detector is a certain value, and the detector has ultrahigh circular polarization resolution capability.
The invention also provides a preparation method of the integrated configurable ultra-high circular polarization extinction ratio photoelectric detector, which comprises the following steps:
growing a metal reflecting layer 2 on the bottom substrate layer 1 using electron beam evaporation or thermal evaporation techniques;
growing a dielectric layer 3 on the surface of the metal reflecting layer 2 by using an atomic layer deposition technology;
defining a pattern on the surface of the dielectric layer 3 by using an electron beam lithography technology, depositing metal by using an electron beam evaporation technology, and obtaining a required electrode layer 4 by using a stripping technology; the electrode layer 4 comprises a metal two-dimensional chiral metamaterial integrated on the source electrode and a metal two-dimensional chiral metamaterial integrated on the drain electrode, which are symmetrically arranged; the metal two-dimensional chiral metamaterial integrated on the source electrode and the metal two-dimensional chiral metamaterial integrated on the drain electrode are Z-shaped metal optical antenna arrays with opposite chiral structures;
obtaining a two-dimensional material from a single crystal sample using a mechanical lift-off method, or obtaining the two-dimensional material using a growth means, and transferring the two-dimensional material onto the electrode layer 4 using a dry transfer technique, electrically connecting the source and the drain across a channel between the source and the drain; the growth means includes chemical vapor deposition and physical vapor deposition.
In this embodiment, the detection target wavelength is 1550nm, the material type of the metal reflective layer 2 is Au, and the material type of the dielectric layer 3 is Al after electromagnetic simulation optimization 2 O 3 The electrode layer 4 is made of Ti and Au, and the structural size of the metal two-dimensional chiral metamaterial is P x ＝780nm、P y ＝550nm、L 1 ＝280nm、L 2 ＝90nm、L 3 =220 nm and h 3 The dimensions of the metal chiral optical antenna region on one side of the source and drain regions were 36 μm×33 μm with a channel width between the source and drain regions of 4 μm =30 nm (Ti 3nm, au27 nm), and the Z-type metal optical antenna array of the source region was designed to be apparent in absorption of left-hand optical rotation.
The substrate material in this example is a 500 μm thick single-throw dioxySi substrate with SiO on its surface 2 The thickness of the oxide layer was 285nm. The material Au of the metal reflective layer 2 was grown to a thickness of 100nm using electron beam evaporation technique. Material Al of dielectric layer 3 2 O 3 The thickness was 200nm.
To improve the contact between Au and the dielectric material, the metal reflective layer 2 is made of SiO 2 And Al 2 O 3 The interface of the contact was grown Ti as an adhesion layer using electron beam evaporation to a thickness of 10nm and 5nm, respectively. The source electrode layer 4 and the drain electrode layer 4 of the integrated metal chiral two-dimensional metamaterial are made of Ti and Au, and the thicknesses of the integrated metal chiral two-dimensional metamaterial are 3nm and 27nm respectively in the embodiment.
In the two-dimensional material layer 5 in the embodiment, the material type is MoS 2 The thickness was 8nm. MoS obtained by mechanical stripping of Polycarbonate (PC) and Polydimethylsiloxane (PDMS) was used 2 Transferred to the electrode layer 4 and crossing the channel. The residual Polycarbonate (PC) was removed using chloroform solution.
MoS 2 The contact with Au forms a schottky junction, and the self-driven photocurrent at the junction is due to plasmon resonance induced hot electron injection. Referring to fig. 5 to 7, the Z-type metal optical antenna array of the source region has a significant difference in absorption and optical response to left and right optical rotations in a band range of 1400nm to 1600nm, and a CPER value at 1550nm is 3.28.
Referring to fig. 8, in combination with the experimental results of fig. 6, in the test configuration, the wavelength of the incident light was 1550nm, the optical power was 281 μw, the incident light was irradiated to the surface of the detector through the linear polarizer, the 1/2 wave plate and the 1/4 wave plate in this order, and the fast axis direction of the wave plate and the polarization direction of the linear polarized light were both perpendicular to the in-plane x-axis. Adjusting the optical power allocated by the source: drain allocated optical power = 1:3.28, the photocurrent of the detector at the time of left rotation incidence is 7nA, and the photocurrent at the time of right rotation incidence is close to 0nA, and the detector shows circular polarization extinction ratio approaching infinity by using the detection mode.
Similarly, with reference to fig. 7, the optical power distribution of the source and the drain of the detector can be reasonably adjusted and regulated in a proper wavelength range, and the detector can be configured to be basically unresponsive to the left rotation or the right rotation in the detection wavelength, so as to obtain an ultrahigh polarization extinction ratio.
The invention at least comprises the following three advantages:
1. by configuring the intensity ratio of the incident light of the two Z-shaped metal optical antenna array areas at the source electrode and the drain electrode, the photocurrent output by the detector can be close to zero under the incidence of the optical rotation of a specific rotation direction, and can continuously and stably output a photocurrent with a certain value under the incidence of the optical rotation of the other rotation direction. Therefore, the ultrahigh extinction ratio obtained in a suitable wavelength range can realize ultrahigh resolution with respect to the left-hand rotation or the right-hand rotation.
2. The surface plasmon polariton mode is excited to generate a local strong light field which is fully overlapped with the quantum well layer in space, so that the light absorption rate and the quantum efficiency of the two-dimensional material are improved on the basis of realizing high extinction ratio circular polarization discrimination.
3. The detector does not need to use an independent optical element, has high integration level, easy preparation, small volume, high stability and reliability, and has extremely high universality, such as: the size of the metal optical antenna can be changed, and the target detection wavelength of the detector can be arbitrarily adjusted; the Z-type metal optical antenna can be arbitrarily changed into other metal optical micro-nano structures, so that the detection of a required polarization state (such as linearly polarized light) is achieved; the detection channel material can be changed, so that a response mode which is suitable for photovoltaic response, photo-thermal electric response and other self-driven types can be achieved.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (8)
1. An integrated configurable ultra-high circular polarization extinction ratio photodetector, comprising: a bottom substrate layer, a metal reflecting layer, a dielectric layer, an electrode layer and a two-dimensional material layer from bottom to top; the electrode layer and the two-dimensional material layer can be arranged in opposite up-down sequence; the electrode layer comprises a metal two-dimensional chiral metamaterial integrated on the source electrode and a metal two-dimensional chiral metamaterial integrated on the drain electrode, which are symmetrically arranged; the metal two-dimensional chiral metamaterial integrated on the source electrode and the metal two-dimensional chiral metamaterial integrated on the drain electrode are Z-shaped metal optical antenna arrays with opposite chiral structures;
when the integrated configurable ultra-high circular polarization extinction ratio photoelectric detector works in a zero bias state, the light response comes from the photovoltaic effect, the hot electron injection and the photo-thermal effect induced by a Schottky junction formed by source electrode metal, drain electrode metal and a two-dimensional material; the source electrode and the drain electrode are configured by moving an incident light spot, the intensity ratio of the incident light of the two Z-shaped metal optical antenna arrays at the source electrode and the drain electrode is changed, and under the irradiation of any rotation direction, the source electrode and the drain electrode generate photocurrents with the same size and opposite directions, so that the net photocurrent output by the photoelectric detector is zero, and the noise is reduced by 1 to 2 orders of magnitude; and under the optical rotation irradiation of the other rotation direction, the photoelectric detector continuously and stably outputs photocurrent.
2. The integrated configurable ultra-high circular polarization extinction ratio photodetector of claim 1, wherein said bottom substrate layer is a support layer for said photodetector;
the material of the bottom substrate layer is a semiconductor process base material; the semiconductor process substrate material includes a silicon material, a gallium arsenide material, and a gallium nitride material.
3. The integrated configurable ultra-high circular polarization extinction ratio photodetector of claim 1, wherein a thickness of said metallic reflective layer is no less than twice a skin depth of electromagnetic waves in said metallic reflective layer.
4. The integrated configurable ultra-high circular polarization extinction ratio photodetector of claim 1, wherein said dielectric layer is a medium transparent to an operating band;
the dielectric layer has a thickness less than a quarter of the detection wavelength.
5. The integrated configurable ultra-high circular polarization extinction ratio photodetector of claim 1, wherein said electrode layer comprises in particular: a source electrode, a drain electrode and a metal two-dimensional chiral metamaterial;
the source electrode and the drain electrode are symmetrically arranged; a channel is arranged between the source electrode and the drain electrode;
the metal two-dimensional chiral metamaterial is integrated on the source electrode and the drain electrode respectively.
6. The photodetector of claim 5, wherein said two-dimensional material is disposed on said metallic two-dimensional chiral metamaterial, said two-dimensional material being configured to span said channel and electrically connect said source and said drain.
7. The photodetector of claim 5 wherein the thickness of said electrode layer is no less than twice the skin depth of an electromagnetic wave in said electrode layer.
8. The preparation method of the integrated configurable ultrahigh circular polarization extinction ratio photoelectric detector is characterized by comprising the following steps of:
growing a metal reflecting layer on the bottom substrate layer by using electron beam evaporation or thermal evaporation technology;
growing a dielectric layer on the surface of the metal reflecting layer by using atomic layer deposition, electron beam evaporation and magnetron sputtering;
defining a pattern on the surface of the dielectric layer by using an electron beam lithography technology, depositing metal by using an electron beam evaporation technology, and obtaining a required electrode layer by using a stripping technology; the electrode layer comprises a metal two-dimensional chiral metamaterial integrated on the source electrode and a metal two-dimensional chiral metamaterial integrated on the drain electrode, which are symmetrically arranged; the metal two-dimensional chiral metamaterial integrated on the source electrode and the metal two-dimensional chiral metamaterial integrated on the drain electrode are Z-shaped metal optical antenna arrays with opposite chiral structures;
obtaining a two-dimensional material from a single crystal sample using a mechanical lift-off method, or obtaining the two-dimensional material using a growth means, and transferring the two-dimensional material onto the electrode layer using a dry transfer technique, electrically connecting the source and the drain across a channel between the source and the drain; the growth means includes chemical vapor deposition and physical vapor deposition.
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