CN116190527A - Light-emitting diode and preparation method thereof - Google Patents

Light-emitting diode and preparation method thereof Download PDF

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Publication number
CN116190527A
CN116190527A CN202211719733.1A CN202211719733A CN116190527A CN 116190527 A CN116190527 A CN 116190527A CN 202211719733 A CN202211719733 A CN 202211719733A CN 116190527 A CN116190527 A CN 116190527A
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layer
light
metal
light emitting
emitting diode
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Inventor
褚志强
黄鑫
马贤杰
刘宇
马璐
詹宇
赵倩
吴和兵
曹玉飞
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Focus Lightings Technology Suqian Co ltd
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Focus Lightings Technology Suqian Co ltd
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Priority to CN202211719733.1A priority Critical patent/CN116190527A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The application provides a light-emitting diode and a preparation method thereof, wherein the light-emitting diode comprises a substrate, the substrate comprises a first surface and a second surface which are oppositely arranged, the first surface is a light-in surface, and the second surface is a light-out surface; the light-emitting structure layer grows on the first surface and provides incident light for the substrate; a first reflective layer grown on the light emitting structure layer; and the metal dimming film grows on the second surface and is used for adjusting the emergent direction of light rays and forming a double-sided reflecting structure with the first reflecting layer. Through setting up the metal and adjust luminance the membrane, the metal adjusts luminance the membrane and grows at the upper surface of substrate to improved the illumination intensity of emitting diode's side direction light, made emitting diode not only can realize axial light-emitting, can also realize better side direction light-emitting, and then realized emitting diode's big wide-angle and send out.

Description

Light-emitting diode and preparation method thereof
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a light emitting diode and a method for manufacturing the same.
Background
Light emitting diodes (Light Emitting Diode, LEDs), which are a commonly used light emitting device that emits light by energy released by electron and hole recombination, are widely used in the field of illumination. The light emitting diode can efficiently convert electric energy into light energy, and has wide application in modern society, such as illumination, flat panel display, medical devices and the like. The electronic element has appeared in 1962 as early as low-luminosity red light, and then other monochromatic light versions are developed, the light emitted can be in visible light, infrared light and ultraviolet light, and the luminosity is improved to be equivalent. The application is also used as an indicator light, a display panel and the like at the beginning; with the continuous progress of technology, light emitting diodes have been widely used for displays and illumination.
With the development of display application, the wide-angle chip becomes a hot spot for digital and panel display. In the existing large-luminous-angle light-emitting diode, in order to control the luminous angle of a chip, a distributed Bragg reflector (distributed Bragg reflection, DBR) dimming film layer is added on the light-emitting surface of the chip, so that the proportion of axial light and lateral light of the chip is controlled.
To achieve the target requirement for the ratio of axial light to lateral light, the reflectivity of the DBR dimming film needs to be set to a large drop near the dominant wavelength of the chip light emission. Taking a blue light 450nm light-emitting chip as an example, the light-emitting spectrum of the chip is distributed at 425nm-500nm, the reflectivity of the DBR dimming film is suddenly reduced near 475-500nm, the reflectivity is reduced from 91% of 475nm to 36% of 500nm, the fluctuation of the reflection waveform of the adjusting film is caused, the uniformity of the light-emitting angle of the chip is affected, the wide-angle light-emitting cannot be realized, and the light-emitting effect is poor.
Disclosure of Invention
The application provides a light-emitting diode and a preparation method thereof, which are used for solving the problem of poor light-emitting effect of the light-emitting diode with a large wide angle.
The light-emitting diode provided by the first aspect of the application comprises a substrate, wherein the substrate comprises a first surface and a second surface which are oppositely arranged, the first surface is a light-in surface, and the second surface is a light-out surface;
a light emitting structure layer grown on the first surface, the light emitting structure layer providing incident light to the substrate;
a first reflective layer grown on the light emitting structure layer;
and the metal dimming film is grown on the second surface and used for adjusting the emergent direction of light rays and forming a double-sided reflecting structure with the first reflecting layer.
In one implementation, the metal dimming film is a metal composite layer structure.
In one implementation, the metal composite layer structure includes an adhesion layer and a structural layer that are sequentially generated.
In one implementation, the adhesion layer is one of Cr, al, ti, ni and has a thickness of 0.5-5nm.
In one implementation, the structural layer is a stack of one or more metals in Al, ag, pt, au, cu, with a thickness of 2-100nm.
In one implementation manner, the metal composite layer structure further comprises a protective layer, wherein the protective layer grows on the structural layer, the protective layer is an oxide passivation layer, and the thickness of the protective layer is 2-1000nm;
the protective layer is SiO 2 Or Si (or) 3 N 4 。
In one implementation manner, the metal composite layer structure further comprises a protective layer, wherein the protective layer grows on the structural layer, the protective layer is a metal layer, and the thickness of the protective layer is 2-50nm;
the protective layer is Au or Pt.
In one implementation, the metal dimming film is a metal single-layer structure, and the thickness of the metal single-layer structure is 10-1000nm.
The metal single-layer structure is one of Al, ag, pt, au, cu.
In one implementation manner, the light-emitting structure layer comprises an N-type GaN layer, a multiple quantum well layer and a P-type GaN layer which are sequentially grown on the first surface;
the light emitting diode further includes: the second reflection layer, the current blocking layer, the conducting layer, the P-type electrode and the N-type electrode;
the second reflecting layer is arranged between the metal dimming film and the substrate, is a single-layer oxide with the thickness of 5-1000nm and is SiO 2 Or MgF 2 ；
The current blocking layer and the conductive layer are arranged on the P-type GaN layer, and the conductive layer covers the current blocking layer;
the P-type electrode and the N-type electrode are disposed on the first reflective layer.
A second aspect of the present application provides a method for manufacturing a light emitting diode, including:
providing a layer of substrate, wherein the substrate comprises a first surface and a second surface which are oppositely arranged, the first surface is a light incident surface, and the second surface is a light emergent surface;
growing a light emitting structure layer on the first surface, wherein the light emitting structure layer provides incident light for the substrate;
growing a first reflecting layer on the light emitting structure layer;
and growing a metal dimming film on the second surface, wherein the metal dimming film is used for adjusting the emergent direction of light rays and forms a double-sided reflecting structure with the first reflecting layer.
The light-emitting diode comprises a substrate, wherein the substrate comprises a first surface and a second surface which are oppositely arranged, the first surface is a light-in surface, and the second surface is a light-out surface; the light-emitting structure layer grows on the first surface and provides incident light for the substrate; a first reflective layer grown on the light emitting structure layer; and the metal dimming film grows on the second surface and is used for adjusting the emergent direction of light rays and forming a double-sided reflecting structure with the first reflecting layer. Through setting up the metal and adjust luminance the membrane, the metal adjusts luminance the membrane and grows at the upper surface of substrate to improve the illumination intensity of emitting diode's side direction light, make emitting diode can realize better side direction light-emitting, improve wide-angle light-emitting effect, and then realize emitting diode's big wide-angle and send out light.
Drawings
In order to more clearly illustrate the technical solutions of the present application, the drawings that are needed in the embodiments will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.
Fig. 1 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application;
FIG. 2 is a schematic diagram showing the relationship between the wavelength of light and the reflectivity when the metal light modulation film is 10nm thick Al;
fig. 3 is a schematic diagram of a manufacturing process of a light emitting diode according to an embodiment of the present application.
Illustration of:
wherein, the substrate comprises a 1-substrate, a 11-first surface, a 12-second surface, a 2-light-emitting structure layer and a 21-N type GaN layer; 22-multiple quantum well layers; a 23-P type GaN layer; 3-a first reflective layer, 4-a metal dimming film, 5-a current blocking layer; a 6-conductive layer; 7-P type electrode; 8-N type electrode.
Detailed Description
Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The embodiments described in the examples below do not represent all embodiments consistent with the present application. Merely as examples of systems and methods consistent with some aspects of the present application as detailed in the claims.
When the ratio of axial light and lateral light reaches the target requirement by using the dimming film, the reflectivity of the conventional light emitting diode needs to be larger than the fall of the reflectivity of the DBR dimming film near the main wavelength of the light emitted by the chip. The fluctuation of the reflection waveform of the adjusting film affects the instability of the consistency of the luminous angle of the chip, the wide-angle luminous cannot be realized, and the luminous effect is poor.
In order to solve the technical problems, the embodiment of the application provides a light emitting diode and a preparation method, wherein the light emitting diode comprises a metal dimming film, the dimming film made of metal materials is good in metal ductility, the reflectivity change of light rays with different wavelengths is gentle, and the wide-angle light emission of the light emitting diode is stable.
Fig. 1 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
Referring to fig. 1, the light emitting diode provided herein includes a substrate 1, a light emitting structure layer 2, a first reflective layer 3, and a metal dimming film 4.
Wherein the substrate 1 is aluminum oxide (sapphire) Al 2 O 3 Substrate or aluminum oxide, silicon dioxide Al 2 O 3 SiO 2 A composite substrate. Al (Al) 2 O 3 The substrate has the advantages of good chemical stability, no absorption of visible light, moderate price and relatively mature manufacturing technology.
The substrate 1 includes a first surface 11 and a second surface 12 disposed opposite to each other, where the first surface 11 may be a light incident surface and the second surface 12 may be a light emergent surface.
That is, the light emitting structure layer 2 is disposed under the substrate 1, and light emitted from the light emitting structure layer 2 enters the substrate 1 through the first surface 11 of the substrate 1 and exits through the second surface 12 of the substrate 1.
Wherein the first surface 11 of the substrate 1 may be a lower surface of the substrate 1, and the second surface 12 of the substrate 1 may be an upper surface of the substrate 1.
The light emitting structure layer 2 is grown on the first surface 11 of the substrate 1 providing the substrate 1 with incident light. That is, the light emitting structure layer 2 is grown on the lower surface of the substrate 1 so that light is emitted from the bottom to the top.
The first reflective layer 3 is grown on the light emitting structure layer 2 so that the first reflective layer 3 can reflect light emitted from the light emitting structure layer 2.
The metal dimming film 4 is grown on the second surface 12 of the substrate 1, is used for adjusting the emergent direction of light, and forms a double-sided reflecting structure with the first reflecting layer 3.
That is, the metal light modulation film 4 is grown on the upper surface of the substrate 1 to cover the upper surface of the substrate 1, and reaches the metal light modulation film 4 after the light emitting structure layer 2 emits the light through the substrate 1. On the other hand, the metal light modulation film 4 can transmit light rays, so that the light rays can be directly emitted. On the other hand, the metal light modulation film 4 can block light, reflect the light back into the substrate 1, and emit from both sides of the substrate 1. Therefore, the illumination intensity of the lateral light of the light-emitting diode is improved, so that the light-emitting diode not only can realize axial light emission, but also can realize better lateral light emission, and further realize wide-angle light emission of the light-emitting diode. The first reflecting layer 3 under the substrate 1 can also play a role of reflecting light, and forms a double-sided reflecting structure together with the metal dimming film 4 so as to adjust the lateral light-emitting rate of the light.
Specifically, the dimming film made of metal is adopted in the embodiment of the application, and due to the fact that the metal is good in ductility, reflection of different wavelengths can be gentle, and further the waveform fluctuation amplitude of reflected light cannot generate larger drop near the main wavelength of light emission. Therefore, the light emitting diode using the metal light adjusting film 4 has higher lateral light emitting rate and larger light emitting angle, and can realize wide-angle light emission and improve light emitting effect.
It should be noted that, in the design of the led performing wide-angle light emission through the metal dimming film 4, the light emission angle can be adjusted according to the actual light emission requirement. The light emitting angles on both sides of the light emitting diode may be set to be the same, and the light emitting diode may be understood to emit light symmetrically on both left and right sides. And the LED can be set into a light-emitting mode with a larger light-emitting angle at one side and a smaller light-emitting angle at the other side so as to adapt to specific single-side wide-angle light-emitting requirements. The specific wide-angle light emission mode can be adaptively adjusted by the material and the set thickness of the metal light modulation film 4, and is not particularly limited herein.
In a specific implementation, the metal dimming film 4 is a metal composite layer structure.
Specifically, the metal composite layer structure is formed by compounding a plurality of metals.
The metal composite layer structure may include an adhesion layer and a structural layer grown in sequence.
The adhesion layer grows on the second surface 12 of the substrate 1, providing a growth basis for the metal composite layer structure, so that the metal composite layer structure can grow better on the second surface 12 of the substrate 1.
The structural layer grows on the adhesion layer and mainly plays a role in adjusting the light transmittance and the light reflectance.
The light transmittance of the structural layer is mainly adjusted to realize axial light emission.
Specifically, the light emitting structure layer 2 generates light, and when the light passes through the substrate 1 and irradiates the metal light adjusting film 4, the light can be directly output through the axial direction of the metal light adjusting film 4, so that axial light emitting is realized.
The reflectivity of the light is adjusted by the structural layer, so that the lateral light emitting is mainly realized.
Specifically, when light is generated in the light emitting structure layer 2 and irradiated to the metal dimming film 4 through the substrate 1, the light is reflected and reflected from the center position of the substrate 1 to both sides, and the outgoing direction of the light is adjusted to realize lateral light outgoing.
In a specific implementation, the adhesion layer may be one of chromium Cr, aluminum Al, titanium Ti, nickel Ni.
For example, the adhesion layer may be Cr. Cr is a silvery, shiny metal, and ductile. Cr has high corrosion resistance and oxidizes slowly in air even in a red-hot state. Is insoluble in water and can be plated on metal to play a role in protection.
For example, the adhesion layer may be Al. Al is silver white light metal and has ductility. Is often formed into a column, stick, sheet, foil, powder, ribbon, and wire. It has the characteristics of light weight, good electric conductivity and heat conduction performance, high reflectivity and oxidation resistance.
For example, the adhesion layer may be Ti. Ti is ductile. Low density, high mechanical strength and easy processing. The titanium alloy has good low temperature resistance and strong damping resistance, and has longest self vibration attenuation time compared with steel and copper metal after being subjected to mechanical vibration and electric vibration.
For example, the adhesion layer may be Ni. Ni has good ductility and moderate hardness. The alloy has magnetic property, good plasticity, good corrosion resistance, hard and ductile metallic elements with ferromagnetism, and can be highly polished and corrosion-resistant.
In a specific implementation, the thickness of the adhesion layer may be 0.5-5nm.
The growth thickness of the adhesion layer may be, for example, 0.5nm, 1nm, 1.5nm, 2nm, 2.5nm, 3nm, 3.5nm, 4nm, 4.5nm or 5nm, but may also be other growth thicknesses not shown in the range of 0.5-5nm.
In a specific implementation, the structural layer is one or more metal stacks of Al, silver Ag, platinum Pt, gold Au and copper Cu.
By way of example, the structural layer may be a metal stack of Al and Ag. The structural layer may be a metal stack of Al and Pt. The structural layer may be a metal stack of Al and Au. The structural layer may be a metal stack of Al and Cu. The structural layer may be a metal stack of Ag and Pt. The structural layer may be a metal stack of Ag and Au. The structural layer may be a metal stack of Ag and Cu. The structural layer may be a metal stack of Pt and Au. The structural layer may be a metal stack of Pt and Cu. The structural layer may be a metal stack of Au and Cu. The structural layer may be a metal stack of Al, ag and Pt. The structural layer may be a metal stack of Ag, pt and Au. The structural layer may be a metal stack of Pt, au and Cu. The structural layer may be a metal stack of Al, ag, pt and Au. The structural layer may be a metal stack of Ag, pt, au and Cu. The structural layer may be a metal stack of Al, ag, pt, au and Cu, or may be a grown metal stack of Al, ag, pt, au and Cu, among others, not shown.
It should be noted that when the metal stacks of different materials are used, the overlapping sequence of the metals and the thickness between the different metals can be adaptively adjusted according to the actual light emitting requirements of the led, which is not limited herein.
By way of example, the structural layer may be Ag. Ag has stable chemical property, low activity, good heat and electric conduction performance, is not easy to be corroded by chemical medicines, is soft and has high ductility. The light reflection rate is extremely high and can reach more than 99 percent.
By way of example, the structural layer may be Pt. Pt is a transition metal. The ductility is good, and the platinum wire can be drawn into a very thin platinum wire and rolled into a very thin platinum foil. The chemical property is extremely stable, is insoluble in strong acid and strong alkali, and is not oxidized in air.
The structural layer may be Au, for example. Au is chemically stable and does not react with most chemicals.
The structural layer may be Cu, for example. Cu copper is a less reactive heavy metal element. Is not reacted with oxygen in the dry air at normal temperature.
In a specific implementation, the thickness of the structural layer is 2-100nm.
The growth thickness of the structural layer may be 2nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm or 100nm, for example, and may be other growth thicknesses not shown in 2-100nm.
In a specific implementation, the metal composite layer structure further comprises a protective layer, wherein the protective layer grows on the structural layer and is used for protecting the structural layer and the adhesion layer from the influence of external environment.
The protective layer may be an oxide passivation layer or a metal layer.
When the protective layer is provided as an oxide passivation layer, the protective layer may be silicon dioxide SiO 2 Or silicon nitride Si 3 N 4 。
Illustratively, the protective layer may be SiO 2 。SiO 2 The chemical property is stable and does not react with water. Has high fire resistance, high temperature resistance, small thermal expansion coefficient, high insulation, corrosion resistance, piezoelectric effect, resonance effect and unique optical characteristics.
Illustratively, the protective layer may be Si 3 N 4 。Si 3 N 4 Is a high-temperature ceramic material with large hardness, high melting point and stable chemical property, si in silicon nitride 3 N 4 The most chemically stable is also the most thermodynamically stable of all silicon nitrides.
In a specific implementation, when the protective layer is an oxide passivation layer, the thickness of the protective layer may be 2-1000nm.
The growth thickness of the protective layer may be, for example, 2nm, 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm or 1000nm, but may also be other growth thicknesses not shown in 2-1000nm.
When the protective layer is provided as a metal layer, the protective layer may be Au or Pt.
In a specific implementation, when the protective layer is Au or Pt, the thickness of the protective layer is 2-50nm.
The growth thickness of the protective layer may be 2nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm or 50nm, for example, and may be other growth thicknesses not shown in 2-50nm.
The above embodiment is an introduction of the metal dimming film 4 being a metal composite structure, in a specific implementation, the metal dimming film 4 may also be a metal single-layer structure, and the metal single-layer structure is adopted, so that the metal single-layer structure is simple and the processing is convenient on the premise of meeting the light transmittance and the reflectivity.
Wherein the metal single layer structure may be one of Al, ag, pt, au, cu.
For example, the metal single-layer structure may be Al.
For example, the metal single-layer structure may be Ag.
For example, the metal single layer structure may be Pt.
For example, the metal single-layer structure may be Au.
For example, the metal single-layer structure may be Cu.
The thickness of the metal monolayer may be 10-1000nm.
The growth thickness of the structural layer may be, for example, 10nm, 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm or 1000nm, but may also be other growth thicknesses not shown in the range of 10-1000nm.
With continued reference to fig. 1, the light emitting structure layer 2 includes an N-type GaN layer 21, a multiple quantum well layer 22, and a P-type GaN layer 23 grown in this order on the first surface 11 of the substrate 1. Wherein an N-type GaN layer 21 is grown on the first surface 11 of the substrate 1, a multiple quantum well layer 22 is grown on the N-type GaN layer 21, and a P-type GaN layer 23 is grown on the multiple quantum well layer 22.
Fig. 2 is a schematic diagram showing the relationship between the light wavelength and the reflectivity when the metal light modulation film 4 is 10nm thick Al according to the embodiment of the present application.
Referring to fig. 2, it can be seen that the reflectance is in a gradually increasing trend at a wavelength of less than 650nm, and in a gradually decreasing trend at a wavelength of more than 650 nm. It can be seen that when the metal dimming film 4 is made of 10nm thick Al, the emission wavelength of the led can be controlled to be less than 650nm, so as to improve the wide-angle emission effect of the led.
The light emitting diode may further include a second reflective layer, a current blocking layer 5, a conductive layer 6, a P-type electrode 7, and an N-type electrode 8.
The second reflective layer is disposed between the metallic light adjusting film 4 and the substrate 1. Thereby enhancing the reflectivity of the light, enabling more light to be reflected to the lateral direction of the substrate 1, and improving the emergent rate of the lateral light.
In a specific implementation, the second reflective layer is a single layer of oxide, which may be SiO 2 Or magnesium fluoride MgF 2 。
The second reflective layer may be, for example, siO 2 。
The second reflective layer may be MgF 2 。
In a specific implementation, the thickness of the second reflective layer is 5-1000nm.
The thickness of the second reflective layer may be, for example, 5nm, 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm or 1000nm, but may also be other growth thicknesses not shown in 5-1000nm.
A current blocking layer 5 and a conductive layer 6 are grown on the P-type GaN layer 23, and the conductive layer 6 covers the current blocking layer 5.
A P-type electrode 7 and an N-type electrode 8 are disposed on the first reflective layer 3. The P-type electrode 7 is disposed on the first reflective layer 3, the N-type electrode 8 is disposed on the first reflective layer 3, and the N-type electrode 8 is disposed through the P-type GaN layer 23, the multiple quantum well layer 22, and the N-type GaN layer 21.
The light emitting diode provided by the embodiment of the application adopts the metal dimming film 4, and utilizes the good ductility of metal, and the light emitting diode realizes lateral light emitting by controlling the transmissivity and the reflectivity. Compared with the concentrated axial light-emitting, the light-emitting diode in the application has larger light-emitting angle, and meanwhile, the light-adjusting film is made of metal, so that the reflection waveform of light after passing through the metal light-adjusting film 4 is gentle, the light-emitting angle of the light-emitting diode is stable, the light-emitting effect of the light-emitting diode is improved, and the light-emitting effect of the light-emitting diode is improved.
Fig. 3 is a schematic diagram of a manufacturing process of a light emitting diode according to an embodiment of the present application.
Referring to fig. 3, the embodiment of the present application further provides a method for manufacturing a light emitting diode, which is implemented by the following steps S100 to S400.
Step S100: a layer of substrate is provided.
The substrate comprises a first surface and a second surface which are oppositely arranged, wherein the first surface is a light incident surface, and the second surface is a light emergent surface.
In a specific implementation, the substrate is Al 2 O 3 Substrate or Al 2 O 3 SiO 2 Aluminum oxide and silicon dioxide composite substrate. The substrate in the LED mostly adopts sapphire Al 2 O 3 Substrate, al 2 O 3 The substrate has the advantages of good chemical stability, no absorption of visible light, moderate price and relatively mature manufacturing technology.
Step S200: and growing a light-emitting structure layer on the first surface.
The first surface of the substrate may be a lower surface of the substrate, and the second surface of the substrate may be an upper surface of the substrate.
The light emitting structure layer is grown on the first surface of the substrate to provide incident light to the substrate. That is, the light emitting structure layer is grown on the lower surface of the substrate so that light is emitted from bottom to top.
Wherein the light emitting structure layer provides incident light to the substrate.
Step S300: a first reflective layer is grown on the light emitting structure layer.
Step S400: and growing a metal dimming film on the second surface.
The metal dimming film is used for adjusting the emergent direction of light rays and forms a double-sided reflecting structure with the first reflecting layer.
That is, the metal light modulation film grows on the upper surface of the substrate, covers the upper surface of the substrate, and reaches the metal light modulation film after the light emitted by the light emitting structure layer passes through the substrate, on one hand, the metal light modulation film can transmit light, so that the light can be directly emitted. On the other hand, the metal dimming film can block light, so that the light is reflected back into the substrate and emitted from two sides of the substrate. Therefore, the illumination intensity of the lateral light of the light emitting diode is improved, so that the light emitting diode not only can realize axial light emission, but also can realize better lateral light emission.
The first reflecting layer below the substrate can reflect light and form a double-sided reflecting structure together with the metal dimming film so as to increase the lateral light-emitting rate of the light.
It is noted that, in step S400, the metal light modulation film may be grown by any process capable of forming a metal light modulation film on the second surface of the substrate.
For example, a layer of metal dimming film may be sputtered on the second surface of the substrate by physical vapor deposition (Phys ical Vapor Deposition, PVD). Physical vapor deposition: refers to a process in which physical processes are used to effect mass transfer, transferring atoms or molecules from a source onto a substrate surface. The effect of the paint is that certain particles with special properties (high strength, wear resistance, heat dissipation, corrosion resistance and the like) can be sprayed on a parent body with lower properties, so that the parent body has better properties. PVD basic method: vacuum evaporation, sputtering and ion plating.
Of course, the step of preparing the metal light modulation film in the step S400 includes, but is not limited to, the physical vapor deposition method described above, and other methods of forming the metal light modulation film are also possible. The present invention is not particularly limited herein.
Specifically, the metal dimming film may be a metal composite layer structure or a metal single layer structure.
When the metal dimming film is of a metal composite layer structure, the metal composite layer structure comprises an adhesion layer, a structural layer and a protective layer which are sequentially generated. The growth modes of different layers in the metal composite layer structure can be the same or different, and can be adjusted according to actual light-emitting requirements.
The adhesion layer is one of Cr, al, ti, ni and has a thickness of 0.5-5nm.
The structural layer is one or more metal lamination layers in Al, ag, pt, au, cu, and the thickness is 2-100nm.
The protective layer is an oxide passivation layer with the thickness of 2-1000nm; the protective layer may be SiO 2 Or Si (or) 3 N 4 . Or the protective layer is a metal layer with the thickness of 2-50nm; the protective layer is Au or Pt.
When the metal dimming film is of a metal single-layer structure, the thickness of the metal single-layer structure is 10-1000nm. The metal single-layer structure is as follows: al, ag, pt, au, cu.
In a specific implementation, the light emitting structure layer includes an N-type GaN layer, a multiple quantum well layer, and a P-type GaN layer sequentially grown on the first surface, and the light emitting diode further includes: the second reflection layer, the current blocking layer, the conducting layer, the P-type electrode and the N-type electrode; the second reflecting layer is arranged between the metal dimming film and the substrate, is single-layer oxide with the thickness of 5-1000nm and is SiO 2 Or MgF 2 The method comprises the steps of carrying out a first treatment on the surface of the The current blocking layer and the conducting layer are arranged on the P-type GaN layer, and the conducting layer covers the current blocking layer; the P-type electrode and the N-type electrode are disposed on the first reflective layer.
Wherein, the light emitting structure layer can be grown on the substrate in a deposition mode. Deposition refers to the process of depositing and accumulating substances carried by a moving medium after the substances reach a proper place due to the change of conditions.
Specifically, an N-type GaN layer, a multiple quantum well layer and a P-type GaN layer are sequentially deposited on the first surface of the substrate. And a current blocking layer, a conductive layer and a first reflective layer are sequentially deposited on the P-type GaN layer.
Of course, the above-mentioned deposition is only a simple example for the growth modes of different layers except for the metal light modulation film, and specifically, the growth modes are not limited in this application, and can be adaptively adjusted according to actual process requirements, and the growth modes of different layers can be the same or different.
The foregoing detailed description of the embodiments is merely illustrative of the general principles of the present application and should not be taken in any way as limiting the scope of the invention. Any other embodiments developed in accordance with the present application without inventive effort are within the scope of the present application for those skilled in the art.

Claims (10)

1. A light emitting diode, comprising:
the substrate comprises a first surface and a second surface which are oppositely arranged, wherein the first surface is a light incident surface, and the second surface is a light emergent surface;
a light emitting structure layer grown on the first surface, the light emitting structure layer providing incident light to the substrate;
a first reflective layer grown on the light emitting structure layer;
and the metal dimming film is grown on the second surface and used for adjusting the emergent direction of light rays and forming a double-sided reflecting structure with the first reflecting layer.
2. A light emitting diode as defined in claim 1, wherein,
the metal dimming film is of a metal composite layer structure.
3. A light emitting diode as defined in claim 2, wherein,
the metal composite layer structure comprises an adhesion layer and a structural layer which are sequentially generated.
4. A light emitting diode as claimed in claim 3, wherein,
the adhesion layer is one of Cr, al, ti, ni and has a thickness of 0.5-5nm.
5. A light emitting diode as claimed in claim 3, wherein,
the structural layer is one or more metal lamination layers in Al, ag, pt, au, cu, and the thickness is 2-100nm.
6. A light emitting diode as claimed in claim 3, wherein,
the metal composite layer structure further comprises a protective layer, wherein the protective layer grows on the structural layer, the protective layer is an oxide passivation layer, and the thickness of the protective layer is 2-1000nm;
the protective layer is SiO 2 Or Si (or) 3 N 4 。
7. A light emitting diode as claimed in claim 3, wherein,
the metal composite layer structure further comprises a protective layer, wherein the protective layer grows on the structural layer, the protective layer is a metal layer, and the thickness of the protective layer is 2-50nm;
the protective layer is Au or Pt.
8. A light emitting diode as defined in claim 1, wherein,
the metal dimming film is of a metal single-layer structure, and the thickness of the metal single-layer structure is 10-1000nm;
the metal single-layer structure is one of Al, ag, pt, au, cu.
9. A light emitting diode as claimed in claim 2 or 8, wherein,
the light-emitting structure layer comprises an N-type GaN layer, a multiple quantum well layer and a P-type GaN layer which are sequentially grown on the first surface,
the light emitting diode further includes: the second reflection layer, the current blocking layer, the conducting layer, the P-type electrode and the N-type electrode;
the second reflecting layer is arranged between the metal dimming film and the substrate, is a single-layer oxide with the thickness of 5-1000nm and is SiO 2 Or MgF 2 ；
The current blocking layer and the conductive layer are arranged on the P-type GaN layer, and the conductive layer covers the current blocking layer;
the P-type electrode and the N-type electrode are disposed on the first reflective layer.
10. A method of manufacturing a light emitting diode, comprising:
providing a layer of substrate, wherein the substrate comprises a first surface and a second surface which are oppositely arranged, the first surface is a light incident surface, and the second surface is a light emergent surface;
growing a light emitting structure layer on the first surface, wherein the light emitting structure layer provides incident light for the substrate;
growing a first reflecting layer on the light emitting structure layer;
and growing a metal dimming film on the second surface, wherein the metal dimming film is used for adjusting the emergent direction of light rays and forms a double-sided reflecting structure with the first reflecting layer.
CN202211719733.1A 2022-12-30 2022-12-30 Light-emitting diode and preparation method thereof Pending CN116190527A (en)

Priority Applications (1)

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CN202211719733.1A CN116190527A (en) 2022-12-30 2022-12-30 Light-emitting diode and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211719733.1A CN116190527A (en) 2022-12-30 2022-12-30 Light-emitting diode and preparation method thereof

Publications (1)

Publication Number Publication Date
CN116190527A true CN116190527A (en) 2023-05-30

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