CN116184760A - Novel low-melting-point metal nano-imprinting template and preparation method thereof - Google Patents
Novel low-melting-point metal nano-imprinting template and preparation method thereof Download PDFInfo
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- CN116184760A CN116184760A CN202211709839.3A CN202211709839A CN116184760A CN 116184760 A CN116184760 A CN 116184760A CN 202211709839 A CN202211709839 A CN 202211709839A CN 116184760 A CN116184760 A CN 116184760A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 41
- 239000002184 metal Substances 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000007787 solid Substances 0.000 claims abstract description 7
- 229910001338 liquidmetal Inorganic materials 0.000 claims abstract description 6
- 239000002086 nanomaterial Substances 0.000 claims abstract description 4
- 238000012546 transfer Methods 0.000 claims abstract description 3
- 238000002844 melting Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 15
- 229910052733 gallium Inorganic materials 0.000 claims description 15
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000002209 hydrophobic effect Effects 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 8
- 239000002923 metal particle Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 2
- 229910000846 In alloy Inorganic materials 0.000 claims description 2
- 229910018503 SF6 Inorganic materials 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 claims description 2
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims description 2
- 238000003892 spreading Methods 0.000 claims description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052710 silicon Inorganic materials 0.000 abstract description 15
- 239000010703 silicon Substances 0.000 abstract description 15
- 239000004205 dimethyl polysiloxane Substances 0.000 description 19
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000004033 plastic Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- -1 polydimethylsiloxane Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Silicon Compounds (AREA)
Abstract
The invention belongs to the field of micro-nano structure preparation, and in particular relates to a novel low-melting-point metal nano imprinting template and a preparation method thereof. And after the liquid metal is converted into a solid state, stripping the metal template and the silicon template to realize pattern transfer, so as to prepare the novel low-melting-point metal nano imprinting template. The low-melting-point metal nano-imprint template is simple to operate during preparation, low in cost and high in multiplexing rate.
Description
Technical Field
The invention belongs to the field of micro-nano structure preparation, and particularly relates to a low-melting-point metal nano imprinting template and a preparation method thereof.
Background
With the development of the semiconductor industry, chip elements are smaller, process feature sizes are smaller, and the complexity of patterns is gradually improved. The electron beam direct writing technology is used as the mainstream micro-nano pattern processing preparation technology, is limited by point-by-point scanning, high manufacturing cost and the like, and is generally only suitable for the scientific research field and the template processing aspect. The nanoimprint technique was originally proposed by Stephen y. Chou, university of prinston, usa in 1995, to imprint an array of dots with a diameter of 25nm and a pitch of 120nm on a polymethyl methacrylate (poly (methyl methacrylate), PMMA) polymer film, and resolution of 5nm and even less has been achieved. The nano-imprinting technology has the main characteristics of high efficiency, large-area replication, high resolution and low cost, and provides a new opportunity for the development of nano-fabrication. The nano imprinting technology can be applied to almost all fields related to micro-nano processing such as integrated circuits, biomedical products, ultra-high density storage, optical components, sensors, biochips and the like, and particularly has been applied to industrial production in the manufacturing of high-density data storage and high-definition display devices, so that the nano imprinting technology becomes a micro-nano manufacturing technology with the most industrialized application prospect at present. The traditional imprinting template has the defects of complex preparation process, low multiplexing rate and the like. Therefore, a new nano-imprint template preparation technology capable of being prepared simply, having high multiplexing rate and reducing cost needs to be found.
Disclosure of Invention
The invention aims to provide a preparation method of a novel low-melting-point metal nano imprinting template, which realizes the characteristics of lower preparation cost, simpler preparation conditions and higher imprinting reusability of the imprinting template.
The technical scheme adopted by the invention is as follows:
the preparation method of the novel low-melting-point metal nano-imprinting template comprises the following steps:
(1) Carrying out hydrophobic treatment on the surface of the master template;
(2) Spreading a layer of low-melting-point metal particles on the nano structure surface of the master template, wherein the thickness of the low-melting-point metal particles is 8-15 mm;
(3) Performing heat treatment on the master template treated in the step (2) to enable the low-melting-point metal particles to be liquefied;
(4) Cooling the mother board after the heat treatment in the step (3) to below the melting point of the metal to enable the liquid metal to be converted into a solid state;
(5) And demolding, namely stripping the metal template from the master template to realize pattern transfer, so as to obtain the metal nano-imprinting template.
Further, the master template in the step (1) of the present invention is selected from other materials such as silicon, silicon dioxide or polydimethylsiloxane.
Further, the step (1) of the present invention adopts a gaseous fluoride for hydrophobic treatment, wherein the gaseous fluoride is selected from one or more of carbon tetrafluoride, sulfur hexafluoride, hexafluoroethane and trifluoromethane, and a hydrophobic layer with a thickness of more than 10-15 nm is generally ensured.
Further, the low melting point metal used in the present invention has a melting point ranging from 10 ℃ to 30 ℃ and is generally selected from gallium and gallium metal alloys selected from gallium aluminum alloys, gallium bismuth alloys, gallium tin indium alloys.
Further, the heat treatment temperature in the step (3) is 30-50 ℃ higher than the melting point temperature of the low-melting point metal, and vacuumizing treatment is carried out in the heat treatment process so as to discharge bubbles between the template structure and the liquid metal.
The invention also provides a metal nano-imprint template prepared by the preparation method, and the use method of the metal nano-imprint template in the nano-imprint process is similar to that of the traditional template.
Compared with the traditional hard templates such as silicon dioxide, the preparation technology of the novel low-melting-point metal nano-imprinting template provided by the invention has the advantages that the operation is simpler and the cost is lower; and compared with a soft template such as Polydimethylsiloxane (PDMS), the method has the characteristic of high multiplexing rate.
Drawings
FIG. 1 is a schematic diagram of a conventional nanoimprint work;
fig. 2 is a schematic diagram of a novel low-melting point metal nano-imprint template according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Example 1
In this embodiment, using trifluoromethane as the mold release agent, the master template may be made of silicon, silicon dioxide, PDMS, and other materials.
Wherein the preparation of PDMS comprises the following steps: a 100ml plastic beaker was prepared and placed on a balance and cleared. The Polydimethylsiloxane (PDMS) was used as model 184 from Kanning corporation. 5g of PDMS curing agent was poured, and then 50g of PDMS was poured again to satisfy the curing agent: PDMS = 1: 10. Stirring thoroughly with a glass rod for 5min. When the liquid color became milky and a large number of bubbles were found in the plastic beaker, the surface curative was mixed with PDMS uniformly. And then taking out the stirred PDMS, placing the PDMS into a vacuum box for vacuumizing treatment, and forming transparent liquid by the PDMS after the bubbles are discharged. Pouring into a plastic culture dish with the diameter of 90mm, selecting a horizontal position by using a level meter, standing the plastic culture dish filled with PDMS at the horizontal position for 60min to ensure that the thickness of the PDMS film is uniform, and then placing the plastic culture dish into an oven with the temperature of 80 ℃ for curing, wherein the baking time is 60min. And finally, taking out the baked PMDS for standby.
The silicon template is pretreated, and the treatment process is as follows: placing a silicon master template with a periodic hole array into an Inductively Coupled Plasma (ICP) cavity, wherein the structural period is about 200nm, and etching by using a formula of only trifluoromethane etching gas, wherein the trifluoromethane gas can etch silicon dioxide, but cannot etch silicon, and a trifluoromethane molecular layer with the thickness of about 10nm is formed on the surface of the silicon master template, so that the effect of performing hydrophobic treatment on the surface of the silicon master template is finally achieved.
Preparing a metal template: and taking out the silicon substrate mother template subjected to the hydrophobic treatment, placing the silicon substrate mother template on an operation table, and cutting the PDMS cured in the plastic culture dish into long strips for later use, wherein the thickness of the PDMS is about 10mm. The PDMS was then grooved along the four perimeter of the silicon master template. Finally, the gallium metal particles were carefully added to the tank with tweezers and filled.
Then, the mother mould plate with the metal gallium particles on the surface is horizontally placed into an oven for heating, the temperature of the oven is set to be 60 ℃, and the baking time is set to be 30 minutes. The purpose is to heat the metal in solid form and then turn it into liquid form. And then taking out the silicon template of the metal with the surface becoming liquid, putting the silicon template into a vacuum drying box for horizontal placement, setting the temperature to 60 ℃, and vacuumizing for 180min. The method has the function of removing bubbles between the silicon structure and the metal so that the metal is fully filled in the structure.
The silicon substrate template was removed from the vacuum oven and placed horizontally on the operating platform for 60 minutes in order to allow it to cool below its melting point. At the same time, a solid gallium metal particle is placed on the surface of the liquid metal, so that the gallium metal is converted from the liquid state to the solid state.
Finally, demolding operation is carried out. And separating the metal gallium which becomes solid from the silicon substrate template to obtain the metal gallium imprinting template of the periodic column array.
TABLE 1 Process parameters for inductively coupled plasma etching (ICP) deposition of a hydrophobic layer
Claims (8)
1. The preparation method of the novel low-melting-point metal nano-imprinting template is characterized by comprising the following steps of:
(1) Carrying out hydrophobic treatment on the surface of the master template;
(2) Spreading a layer of low-melting-point metal particles on the nano structure surface of the master template, wherein the thickness of the low-melting-point metal particles is 8-15 mm;
(3) Performing heat treatment on the master template treated in the step (2) to enable the low-melting-point metal particles to be liquefied;
(4) Cooling the mother board after the heat treatment in the step (3) to below the melting point of the metal to enable the liquid metal to be converted into a solid state;
(5) And demolding, namely stripping the metal template from the master template to realize pattern transfer, so as to obtain the low-melting-point metal nano imprinting template.
2. The method for preparing a novel low-melting point metal nano-imprint template according to claim 1, wherein the melting point of the low-melting point metal is 10 ℃ to 30 ℃.
3. The method for preparing a novel low-melting point metal nano-imprint template according to claim 2, wherein the low-melting point metal is selected from gallium and gallium metal alloy, and the gallium metal alloy is selected from gallium aluminum alloy, gallium bismuth alloy and gallium tin indium alloy.
4. The method for preparing a novel low-melting point metal nano-imprint template according to claim 1, wherein the heat treatment temperature in the step (3) is 30-50 ℃ higher than the melting point temperature of the low-melting point metal.
5. The method for preparing a novel low-melting point metal nano-imprint template according to claim 1 or 4, wherein the vacuum pumping treatment is performed in the heat treatment process of the step (3) to discharge bubbles between the template structure and the liquid metal.
6. The method for preparing a novel low-melting point metal nano-imprint template according to claim 1, wherein the step (1) adopts gaseous fluoride for hydrophobic treatment, so that the thickness of a hydrophobic layer is 10-15 nm.
7. The method for preparing a novel low-melting point metal nano-imprint template according to claim 6, wherein the gaseous fluoride is one or more selected from carbon tetrafluoride, sulfur hexafluoride, hexafluoroethane and trifluoromethane.
8. A novel low-melting point metal nanoimprint template, characterized in that it is produced by using the production method according to any one of claims 1 to 7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211709839.3A CN116184760A (en) | 2022-12-29 | 2022-12-29 | Novel low-melting-point metal nano-imprinting template and preparation method thereof |
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| CN202211709839.3A CN116184760A (en) | 2022-12-29 | 2022-12-29 | Novel low-melting-point metal nano-imprinting template and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116954019A (en) * | 2023-06-21 | 2023-10-27 | 湖北大学 | Freezing centrifugal nano-imprinting method based on liquid gallium |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116954019A (en) * | 2023-06-21 | 2023-10-27 | 湖北大学 | Freezing centrifugal nano-imprinting method based on liquid gallium |
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