CN116169973B - Bulk acoustic wave resonator and manufacturing method thereof - Google Patents
Bulk acoustic wave resonator and manufacturing method thereof Download PDFInfo
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- CN116169973B CN116169973B CN202310424895.0A CN202310424895A CN116169973B CN 116169973 B CN116169973 B CN 116169973B CN 202310424895 A CN202310424895 A CN 202310424895A CN 116169973 B CN116169973 B CN 116169973B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 122
- 239000002184 metal Substances 0.000 claims abstract description 122
- 239000000758 substrate Substances 0.000 claims abstract description 122
- 238000000034 method Methods 0.000 claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 23
- 230000000149 penetrating effect Effects 0.000 claims abstract description 11
- 229910000679 solder Inorganic materials 0.000 claims description 36
- 238000007789 sealing Methods 0.000 claims description 24
- 238000003466 welding Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 14
- 238000010884 ion-beam technique Methods 0.000 claims description 10
- 239000000945 filler Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- -1 etc. Chemical compound 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a bulk acoustic wave resonator and a manufacturing method thereof, and relates to the technical field of semiconductor device manufacturing. The bulk acoustic wave resonator includes: a substrate which is subjected to thinning treatment and comprises a second cavity penetrating through the upper surface and the lower surface of the substrate; the piezoelectric resonance structure is positioned on the upper surface of the substrate and covers the second cavity, and comprises a first electrode, a piezoelectric film and a second electrode which are arranged in a stacking way from bottom to top; the first contact metal and the second contact metal are covered on the upper surface of the substrate and respectively cover the first electrode and the second electrode partially. The invention has the advantages that the second cavity and the through hole are positioned in the thinned substrate, compared with the traditional bulk acoustic wave resonator, the forming steps of the second cavity and the through hole are simplified, in particular, the steps of flattening the sacrificial layer, etching deep silicon and the like with larger process difficulty are avoided, the manufacturing complexity is reduced, meanwhile, a release hole is not required to be formed in the piezoelectric resonant structure, and the damage to the performance of the device is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor device manufacturing, in particular to a bulk acoustic wave resonator and a manufacturing method thereof.
Background
In recent years, the rapid development of 5G technology has driven the comprehensive upgrade of the radio frequency system of the mobile phone terminal. In the next few years, the number of 5G handsets and base stations will increase exponentially, and the filter requirements will also increase substantially. In addition to the huge demand, with the increasing maturity of 5G communication technology, the market has higher and higher requirements on the performances of the filter in various aspects such as working frequency band, propagation loss and the like. Among the conventional various filters, the bulk acoustic wave resonator (FBAR) has various advantages such as high operating frequency, small device size, high quality factor, low insertion loss, large out-of-band rejection, large power capacity, and high antistatic energy, and thus becomes one of the filters most suitable for 5G applications. However, the bulk acoustic wave resonator has excellent performance, and relatively complex manufacturing processes are also provided, and accordingly, there is a large room for improvement in manufacturing cost.
For example, fig. 1 shows a structure of a conventional bulk acoustic wave resonator. Conventionally, a cavity 2 is formed in a substrate 1, the cavity 2 is filled with a sacrificial layer to form a piezoelectric resonant structure 3, and finally the sacrificial layer is removed. In this process, it is necessary to perform Chemical Mechanical Planarization (CMP) treatment on the sacrificial layer to make the sacrificial layer level with the upper surface of the substrate 1, which has great process difficulty, and in addition, it is necessary to form the release hole 4 in the piezoelectric resonator structure 3 to remove the sacrificial layer, which affects the strength and performance of the device. In addition, conventionally, a via hole 5 is formed and a filler metal 6 is formed therein to lead out the electrode, and the via hole 5 may be formed in the substrate 1 by deep silicon etching with great process difficulty.
Disclosure of Invention
The invention aims to provide a bulk acoustic wave resonator and a manufacturing method thereof, which can simplify the manufacturing flow of the bulk acoustic wave resonator, avoid some more difficult process steps in the traditional manufacturing process of the bulk acoustic wave resonator and reduce the manufacturing difficulty and the manufacturing cost.
In order to solve the above technical problem, the present invention provides a bulk acoustic wave resonator, including:
a substrate, wherein the substrate comprises a second cavity penetrating through the upper surface and the lower surface of the substrate;
the piezoelectric resonance structure is positioned on the upper surface of the substrate and covers the second cavity, and consists of a first electrode, a piezoelectric film and a second electrode which are arranged in a lamination way from bottom to top, wherein in the piezoelectric resonance structure, the overlapping area of the first electrode, the piezoelectric film and the second electrode in the vertical projection is an effective resonance area of the piezoelectric resonance structure;
the contact metal comprises a first contact metal and a second contact metal, the first contact metal and the second contact metal are covered on the upper surface of the substrate, the first contact metal also covers the upper surface of the first electrode partially, and the second contact metal also covers the upper surface of the second electrode partially;
a lower capping layer bonded to the lower surface of the substrate, covering the second cavity;
the through holes comprise a first through hole and a second through hole, and the first through hole and the second through hole penetrate through the lower sealing layer and the substrate and are cut off at the first contact metal part and the second contact metal part respectively;
the electrode lead-out structure comprises filling metal in the through hole, a welding pad positioned on the lower surface of the lower sealing cover layer and a welding ball positioned on the lower surface of the welding pad.
Further, the substrate thickness ranges from 5 μm to 10 μm; the second cavity penetrates through the upper surface and the lower surface of the substrate, and is enclosed into a sealed cavity by the substrate, the piezoelectric resonance structure and the lower sealing cover layer.
Further, the first electrode is positioned on the upper surface of the substrate and covers a part of the upper surface of the substrate; the piezoelectric film covers part of the surface of the first electrode and part of the surface of the substrate; the second electrode is positioned on the upper surface of the piezoelectric film and covers the piezoelectric film entirely.
Further, the first contact metal covers the upper surface of the substrate and partially covers the upper surface of the first electrode, and the first contact metal is in non-contact with the second electrode; the first electrode surface covered by the first contact metal is a first electrode surface outside the effective resonance area; the second contact metal covers the upper surface of the substrate and partially covers the upper surface of the second electrode, and the second contact metal is not contacted with the first electrode; the second electrode surface covered by the second contact metal is a second electrode surface outside the effective resonance region.
Further, the resonator further comprises an upper cover structure, wherein the upper cover structure comprises a supporting layer and an upper cover layer; the support layer is positioned on the upper surface of the substrate, and a first cavity is formed around the piezoelectric resonance structure, and the first cavity completely contains the piezoelectric resonance structure; the upper sealing layer is bonded to the upper surface of the supporting layer and completely covers the first cavity; the filling metal in the first through hole completely or partially fills the first through hole, is a continuous whole and is electrically connected with the first contact metal; the filler metal in the second via is the same as the filler metal in the first via, and the filler metal in the second via is electrically connected to the second contact metal.
Further, the welding pads are positioned on the lower surface of the lower sealing cover layer, the number of the welding pads is the same as that of the through holes and are in one-to-one correspondence, and the welding pads cover the corresponding through holes and are electrically connected with filling metal in the corresponding through holes; the solder balls are in the same number as the solder pads and in one-to-one correspondence, and are positioned on the lower surfaces of the corresponding solder pads and are electrically connected with the corresponding solder pads.
Further, the through hole is replaced by a contact cavity, the contact cavity comprises a first connecting cavity and a second connecting cavity, and the first connecting cavity and the second connecting cavity penetrate through the substrate and are respectively cut off at a first contact metal part and a second contact metal part; the solder balls are positioned in the contact cavities, partially or completely fill the contact cavities, and simultaneously electrically connect with the pads on the substrate and the corresponding contact metal.
The invention also provides a manufacturing method of the bulk acoustic wave resonator, which comprises the following steps:
providing a substrate, and forming a piezoelectric resonance structure on the substrate, wherein the piezoelectric resonance structure comprises a first electrode, a piezoelectric film and a second electrode which are sequentially formed from bottom to top;
forming a first contact metal and a second contact metal, covering the upper surface of the substrate and respectively partially covering the upper surfaces of the first electrode and the second electrode;
thinning the substrate, forming a second cavity in the substrate, and bonding a lower sealing layer on the lower surface of the substrate to seal the second cavity;
forming a through hole penetrating the lower sealing layer and the substrate;
forming an electrode lead-out structure;
the method for forming the piezoelectric resonant structure comprises the following steps:
depositing and patterning a first electrode on a substrate, covering a portion of the surface of the substrate;
depositing and patterning a piezoelectric film to cover a part of the surface of the first electrode and a part of the surface of the substrate;
depositing and patterning a second electrode to completely cover the piezoelectric film;
after forming the contact metal and before thinning the substrate, the method further comprises the following steps: the method for forming the upper sealing cover structure comprises the following steps:
forming a supporting layer which is hollow and cylindrical and is formed on the upper surface of a substrate, wherein a space in the middle of the supporting layer is a first cavity, and the first cavity completely wraps the piezoelectric resonance structure;
bonding a capping layer to the upper surface of the support layer and sealing the first cavity.
Further, the method for thinning the substrate comprises the following steps: reactive ion beam etching and chemical mechanical planarization, wherein the thickness range of the thinned substrate is 5-10 mu m; the second cavity penetrates through the substrate and exposes the piezoelectric resonance structure, the projection of the second cavity in the vertical direction completely comprises the range of the effective resonance area, and the forming method of the second cavity comprises the following steps: etching by a reactive ion beam; the material of the lower sealing layer comprises an inorganic dielectric material or an organic curing film, and the bonding method comprises an interatomic bonding or film pasting process; forming a first through hole and a second through hole penetrating through the lower sealing layer and the substrate, and respectively exposing the first contact metal and the second contact metal, wherein the forming method of the through holes comprises the following steps: and (5) etching by a reactive ion beam.
Further, the method for forming the electrode lead-out structure comprises the following steps:
forming filling metal in the through hole, wherein the filling metal is electrically connected with contact metal corresponding to the through hole, the filling metal fully or partially fills the through hole, and the filling metal is made of gold, copper, nickel, titanium or aluminum, and the forming method comprises electroplating, physical vapor deposition or electron beam evaporation;
forming welding pads on the lower surface of the lower sealing layer, wherein the welding pads are the same in number and in one-to-one correspondence with the through holes, cover the corresponding through holes and are electrically connected with filling metal in the corresponding through holes;
and forming a solder ball on the lower surface of each welding pad, wherein the solder ball is electrically connected with the corresponding welding pad, the diameter of the solder ball ranges from 5 mu m to 200 mu m, the material of the solder ball is the same as that of the filling metal, and the forming method comprises a ball implantation process.
The invention has the beneficial effects that:
the substrate is thinned, and two structures of a second cavity and a through hole are etched in the thinned substrate, so that a series of steps of filling the sacrificial layer, flattening the sacrificial layer, forming a release hole, removing the sacrificial layer and the like are omitted after the second cavity is formed by the traditional manufacturing method, the manufacturing process is simplified, particularly, the step of extremely difficult process of flattening the sacrificial layer is avoided, and meanwhile, the influence of forming the release hole in the piezoelectric resonance structure on the strength and performance of a device is avoided; on the other hand, the deep silicon etching step with great process difficulty required by the traditional method for forming the through hole is avoided, and only the through hole with shallower depth is needed to be etched. Compared with the traditional manufacturing method, the manufacturing method of the bulk acoustic wave resonator provided by the invention simplifies the manufacturing flow, particularly avoids some technological flows with great difficulty, and reduces the influence on the performance of the device.
Drawings
Fig. 1 shows a schematic structure of a conventional bulk acoustic wave resonator.
Fig. 2 shows a schematic structure of a bulk acoustic wave resonator of embodiment 1 of the present invention.
Fig. 3 to 13 are schematic diagrams showing different configurations corresponding to the steps of the method for manufacturing a bulk acoustic wave resonator according to embodiment 1 of the present invention.
Fig. 14 shows a schematic structural diagram of a bulk acoustic wave resonator of embodiment 2 of the present invention.
Fig. 15 shows a schematic structural diagram of a bulk acoustic wave resonator of embodiment 3 of the present invention.
Fig. 16 is a schematic view showing a structure in which a bulk acoustic wave resonator of embodiment 3 of the present invention is attached to a substrate.
Reference numerals illustrate:
1-a substrate; 2-cavity; a 3-piezoelectric resonant structure; 4-a release hole; 5-through holes; 6-filling metal; 100-substrate (thinned substrate is labeled 100'); 101-a first electrode; 102-a piezoelectric film; 103-a second electrode; 104A-a first contact metal; 104B-a second contact metal; 105-a support layer; 106-an upper capping layer; 107-a first cavity; 108-a second cavity; 109-a lower capping layer; 110A-a first via; 110B-a second via; 111-filling metal; 112-bonding pads; 113-solder balls (deformed solder balls are labeled 113'); 114A-a first contact cavity; 114B-a second contact cavity; 115-a substrate; 116-substrate pads.
Detailed Description
The present invention will be described in further detail with reference to the drawings and the specific embodiments so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby making clear and defining the scope of the present invention.
Example 1
The present embodiment provides a bulk acoustic wave resonator and a method for manufacturing the same, fig. 2 shows a schematic structural diagram of the bulk acoustic wave resonator of the present embodiment, and fig. 3 to 13 show schematic structural diagrams corresponding to different steps of the method for manufacturing the bulk acoustic wave resonator of the present embodiment.
Referring to fig. 2, the bulk acoustic wave resonator provided in this embodiment includes:
a thinned substrate 100', wherein the thickness of the substrate 100' ranges from 5 μm to 10 μm, and a second cavity 108 penetrating the upper and lower surfaces of the substrate 100 'is formed in the substrate 100';
the piezoelectric resonator structure comprises a first electrode 101, a piezoelectric film 102 and a second electrode 103 from bottom to top in sequence, wherein the first electrode 101 is arranged on the upper surface of a substrate 100', the piezoelectric film covers part of the upper surface of the substrate 100' and part of the upper surface of the first electrode 101 respectively, and the second electrode 103 is arranged on the upper surface of the piezoelectric film 102 and completely covers the piezoelectric film 102; in the piezoelectric resonant structure, a region where the first electrode 101 and the second electrode 103 are projected and overlapped in the vertical direction is called an effective resonant region, and in this embodiment, the projection of the effective resonant region in the vertical direction is completely located in the range of the second cavity 108;
a contact metal disposed on the substrate 100' and including a first contact metal 104A and a second contact metal 104B, wherein the first contact metal 104A covers a portion of the surface of the first electrode 101 outside the effective resonance region and is not in direct contact with the second electrode 103; the second contact metal 104B covers a part of the surface of the second electrode 103 outside the effective resonance region and is not in direct contact with the first electrode 101;
an upper capping structure comprising a support layer 105 and an upper capping layer 106, the upper capping structure and the substrate 100' enclosing a sealed first cavity 107 containing the piezoelectric resonant structure; the supporting layer 105 is disposed on the substrate 100' and is arranged in a cylindrical shape around the piezoelectric resonant structure, and in this embodiment, the supporting layer is made of dielectric materials such as silicon oxide and silicon nitride or photo-etching materials such as epoxy SU8 resin, photosensitive Polyimide (PI), photosensitive benzocyclobutene (BCB), photosensitive dry film, etc., and the upper surface of the supporting layer is 5 μm to 15 μm higher than the upper surface of the second electrode 103; in this embodiment, the upper cover layer 106 is disposed on the upper surface of the supporting layer 105 and completely covers the first cavity 107, and the upper cover layer 106 is made of a photosensitive dry film, si, sapphire, quartz glass, or the like;
a lower cover layer 109 disposed on the lower surface of the substrate 100', wherein the lower cover layer completely covers the second cavity 108, and the lower cover layer 109 is made of a material consistent with the upper cover layer 106;
a via hole penetrating the lower capping layer 109 and the substrate 100', including a first via hole 110A and a second via hole 110B; the first via 110A is located below the first contact metal 104A and ends at the first contact metal 104A; the second via 110B is located below the second contact metal 104B and ends at the second contact metal 104B; the diameter of the through hole ranges from 10 μm to 200 μm;
an electrode lead-out structure for connecting the first electrode 101 and the second electrode 103 to the outside, including a filler metal 111, a pad 112, and a solder ball 113; the filling metal 111 is disposed in the via hole, wherein the filling metal 111 in the first via hole 110A partially or completely fills the first via hole 110A (completely filled in this embodiment) and electrically connects with the first contact metal 104A, and the filling metal 111 in the second via hole 110B is the same as the filling metal 111 in the first via hole 110A, except that the filling metal 111 in the second via hole 110B electrically connects with the second contact metal 104B; the bonding pads 112 are disposed on the lower surface of the lower cover 109, the number of the bonding pads 112 is the same as that of the through holes and corresponds to that of the through holes one by one, the bonding pads 112 cover the corresponding through holes respectively, and each bonding pad 112 is electrically connected with the filling metal 111 in the corresponding through hole; the solder balls 113 are in consistent number and one-to-one correspondence with the solder pads 112, and the solder balls 113 are respectively arranged on the lower surfaces of the corresponding solder pads 112 and are electrically connected with the corresponding solder pads 112; the materials of the filling metal 111, the bonding pad 112 and the solder ball 113 may be the same or different metals, such as gold, copper, nickel, titanium, aluminum, etc., and gold in this embodiment.
Referring to fig. 3 to 13, the method of manufacturing the resonator is specifically as follows:
in step S1, as shown in fig. 3, a first electrode 101 is deposited on the upper surface of a substrate 100 and the electrode 101 is patterned, where in this embodiment, the first electrode 101 is deposited by physical vapor deposition and the etching method is reactive ion beam etching.
In step S2, as shown in fig. 4, a piezoelectric film 102 is deposited on the substrate 100 and the first electrode 101, and the piezoelectric film 102 is patterned, so that the piezoelectric film 102 covers a part of the first electrode 101 and the substrate 100, and the piezoelectric film deposition method and the etching method in this embodiment are the same as those of the first electrode 101.
Step S3, as shown in FIG. 5, depositing a second electrode 103 on the piezoelectric film 102, so that the second electrode 103 completely covers the piezoelectric film 102, wherein the area where the first electrode 101, the piezoelectric film 102 and the second electrode 103 overlap in the vertical direction is an effective resonance area; the second electrode 103 deposition method in this embodiment is the same as the first electrode 101.
Step S4, as shown in FIG. 6, a first contact metal 104A and a second contact metal 104B are deposited on the surface of the substrate 100, wherein a part of the first contact metal 104A is also deposited on the surface of the first electrode 101 outside the effective resonance region, and a part of the second contact metal 104B is also deposited on the surface of the second electrode 103 outside the effective resonance region; in this embodiment, the deposition method of the first contact metal 104A and the second contact metal 104B is physical vapor deposition, and both may be simultaneously deposited or sequentially deposited step by step.
Step S5, as shown in FIG. 7, forming a supporting layer 105 on the surface of the substrate 100, wherein the supporting layer 105 is arranged in a cylindrical shape around the piezoelectric resonance structure; the support layer 105 is bonded to the surface of the substrate 100 in this embodiment.
In step S6, as shown in fig. 8, the upper cover layer 106 is bonded to the upper surface of the supporting layer 105, so as to form a closed first cavity 107.
In step S7, as shown in FIG. 9, the substrate 100 is thinned, the thickness of the thinned substrate is 5-10 μm, the thinned substrate mark is changed into 100', and the thinning method adopts grinding thinning, chemical mechanical planarization, reactive ion beam etching and the like.
In step S8, as shown in fig. 10, a second cavity 108 penetrating the upper and lower surfaces of the substrate 100 'is etched on the thinned substrate 100', and the first electrode 101 is exposed, where the projection of the second cavity 108 in the vertical direction completely includes the effective resonance area of the piezoelectric resonance structure, and in this embodiment, the etching method of the second cavity 108 uses reactive ion beam etching.
In step S9, as shown in fig. 11, a lower cap layer 109 is bonded to the lower surface of the thinned substrate 100', and the second cavity 108 is completely closed.
Step S10, as shown in FIG. 12, etching to form a first via hole 110A and a second via hole 110B, penetrating the lower cap layer 109 and the thinned substrate 100', and exposing the first contact metal 104A and the second contact metal 104B, respectively; in this embodiment, the etching method of the first via hole 110A and the second via hole 110B adopts reactive ion beam etching, and the two may be etched simultaneously or sequentially in steps.
Step S11, as shown in fig. 13, depositing a filling metal 111 in the first through hole 110A and the second through hole 110B, where the filling metal 111 in the first through hole 110A is electrically connected to the first contact metal 104A, and the filling metal 111 in the second through hole 110B is electrically connected to the second contact metal 104B; the filling metal in each through hole can be partially or completely filled in the corresponding through hole, and in this embodiment, the filling metal is completely filled, and an electroplating method is adopted.
Step S12, depositing bonding pads 112 on the lower surface of the lower sealing layer, wherein the number of the bonding pads 112 is consistent with that of the through holes, each bonding pad 112 covers one through hole and is electrically connected with the filling metal 111 in the corresponding through hole, and the bonding pad 112 deposition method in the embodiment adopts physical vapor deposition; then, a solder ball 113 is formed on the lower surface of each of the pads 112, and an electrical connection is formed between the solder ball 113 and the corresponding pad 112, in this embodiment, the solder ball is formed by a ball-implanting process. Thus, the manufacturing process of the bulk acoustic wave resonator shown in fig. 2 is completed.
In the manufacturing process of the bulk acoustic wave resonator provided in this embodiment, after the upper cover structure is formed, the substrate 100 is thinned, and then the second cavity 108 and the through holes 110A and 110B are formed in the thinned substrate 100', so that the steps of depositing and flattening the sacrificial layer, forming the release hole, removing the sacrificial layer, deep silicon etching the through holes and the like in the conventional method are omitted, the manufacturing process is simplified, particularly, the steps with great process difficulty are avoided, and meanwhile, the influence of the formation of the release hole in the piezoelectric resonant structure on the performance of the device is avoided.
Example 2
The present embodiment provides a bulk acoustic wave resonator and a method of manufacturing the same, and fig. 14 shows a schematic structural diagram of the bulk acoustic wave resonator of the present embodiment.
Referring to fig. 14, compared with embodiment 1, the bulk acoustic wave resonator provided in this embodiment is different in that the lower cover layer 109 is not included, and accordingly, the second cavity 108 is non-sealed, the through holes 110A and 110B extend through only the thinned substrate 100', and the bonding pads 112 are disposed on the lower surface of the thinned substrate 100'.
The difference between the method for manufacturing the bulk acoustic wave resonator according to this embodiment and the method for manufacturing the bulk acoustic wave resonator according to embodiment 1 is that the step of bonding the lower cover layer 109 in step S9 of embodiment 1 is omitted, and the remaining steps are the same as or similar to those in embodiment 1, and refer to embodiment 1.
The method for manufacturing a bulk acoustic wave resonator according to the present embodiment further omits a manufacturing step based on embodiment 1, and when the resonator is subsequently packaged, the second cavity 108 is also a sealed cavity due to the encapsulation of the sealing resin, so that the omitted step in the present embodiment does not affect the performance of the resonator.
Example 3
The present embodiment provides a bulk acoustic wave resonator and a method of manufacturing the same, fig. 15 shows a schematic structural diagram of the bulk acoustic wave resonator of the present embodiment, and fig. 16 shows a schematic structural diagram of the bulk acoustic wave resonator of the present embodiment after being attached to a substrate.
Referring to fig. 15, the structure of the bulk acoustic wave resonator provided in this embodiment is further simplified as compared with embodiment 2, and the specific difference is that:
in this embodiment, the first through hole 110A and the second through hole 110B are replaced by a first contact cavity 114A and a second contact cavity 114B, respectively, wherein the first contact cavity 114A also penetrates through the upper and lower surfaces of the thinned substrate 100', the diameter of the first contact cavity is in the range of 1 μm to 50 μm at the upper surface of the substrate 100', and the first contact metal is exposed, and the diameter of the first contact cavity is in the range of 50 μm to 100 μm at the lower surface of the substrate 100 '; the second contact cavity 114B is identical to the first contact cavity 114A, except that the second contact cavity 114B exposes the second contact metal 104B and does not expose the first electrode.
This embodiment further omits the bonding pad 112 compared to embodiment 2.
The solder balls 113 in this embodiment are disposed in the contact cavities 114A, 1114B in contact with the sidewalls of the respective contact cavities and with their lowermost ends extending beyond the contact cavities.
Accordingly, compared with embodiment 2, the method for manufacturing a bulk acoustic wave resonator provided in this embodiment is different in that:
the step of forming the via holes 110A, 110B is replaced by a step of forming the contact cavities 114A, 114B, which contact cavities 114A, 114B are etched in the same way as the via holes 110A, 110B or by wet etching.
The step of forming the pads 112 is omitted.
In the step of forming the solder balls 113, the solder balls are formed in the contact cavities 114A, 114B.
Compared with embodiment 2, the bulk acoustic wave resonator and the manufacturing process thereof are further simplified, specifically, the process difficulty of etching the contact cavities 114A and 114B with larger diameters is further reduced compared with that of etching the through holes 110A and 110B; in addition, the bonding pad 112 is omitted in this embodiment.
The simplification of the bulk acoustic wave resonator and the corresponding manufacturing process in the embodiment does not affect the subsequent packaging process and performance of the device. Referring to fig. 16, in the packaging process, the bulk acoustic wave resonator provided in this embodiment needs to be connected to the substrate 115 and the substrate pad 116 needs to be electrically connected to the first electrode 101 and the second electrode 103, respectively. When the bulk acoustic resonator provided in this embodiment is connected to the substrate 115 as shown in fig. 16, the solder balls 113 are deformed by hot pressing, and the deformed solder balls 113' partially or completely fill the corresponding contact cavities (in this embodiment, completely fill the corresponding contact cavities) and simultaneously contact with the corresponding contact metal and the substrate bonding pad to generate electrical connection, and further, the first electrode 101 and the second electrode 103 are respectively electrically connected with the corresponding substrate bonding pad 116 through the contact metal and the deformed solder balls; further, similarly to embodiment 2, the second cavity 108 will become a sealed cavity during packaging of the bulk acoustic wave resonator of this embodiment.
In summary, compared with the traditional method for manufacturing the bulk acoustic wave resonator, the method for manufacturing the bulk acoustic wave resonator provided by the invention simplifies the steps of forming the second cavity and the through hole by thinning the substrate and etching the second cavity and the through hole on the thinned substrate, particularly avoids the steps of flattening the sacrificial layer, etching deep silicon and the like with larger process difficulty, and simultaneously avoids the influence of the release hole on the piezoelectric resonant structure on the performance of the device.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present invention.
Claims (9)
1. A bulk acoustic wave resonator, comprising:
a substrate, wherein the substrate comprises a second cavity penetrating through the upper surface and the lower surface of the substrate;
the piezoelectric resonance structure is positioned on the upper surface of the substrate and covers the second cavity, and consists of a first electrode, a piezoelectric film and a second electrode which are arranged in a lamination way from bottom to top, wherein in the piezoelectric resonance structure, the overlapping area of the first electrode, the piezoelectric film and the second electrode in the vertical projection is an effective resonance area of the piezoelectric resonance structure;
the contact metal comprises a first contact metal and a second contact metal, the first contact metal and the second contact metal are covered on the upper surface of the substrate, the first contact metal also covers the upper surface of the first electrode partially, and the second contact metal also covers the upper surface of the second electrode partially;
a lower capping layer bonded to the lower surface of the substrate, covering the second cavity;
the through holes comprise a first through hole and a second through hole, and the first through hole and the second through hole penetrate through the lower sealing layer and the substrate and are cut off at the first contact metal part and the second contact metal part respectively;
the electrode lead-out structure comprises filling metal positioned in the through hole, a welding pad positioned on the lower surface of the lower sealing cover layer and a welding ball positioned on the lower surface of the welding pad;
the manufacturing method of the bulk acoustic wave resonator comprises the following steps:
providing a substrate, and forming a piezoelectric resonance structure on the substrate, wherein the piezoelectric resonance structure comprises a first electrode, a piezoelectric film and a second electrode which are sequentially formed from bottom to top;
forming a first contact metal and a second contact metal, covering the upper surface of the substrate and respectively partially covering the upper surfaces of the first electrode and the second electrode;
thinning the substrate to 5-10 mu m, forming a second cavity in the substrate, and bonding a lower sealing layer on the lower surface of the substrate to seal the second cavity;
forming a through hole penetrating the lower sealing layer and the substrate;
forming an electrode lead-out structure;
the method for forming the piezoelectric resonant structure comprises the following steps:
depositing and patterning a first electrode on a substrate, covering a portion of the surface of the substrate;
depositing and patterning a piezoelectric film, covering part of the surface of the first electrode and part of the surface of the substrate, depositing and patterning a second electrode, and completely covering the piezoelectric film;
after forming the contact metal and before thinning the substrate, the method further comprises the step of forming an upper sealing cover structure, wherein the forming method of the upper sealing cover structure comprises the following steps:
forming a supporting layer which is hollow and cylindrical and is formed on the upper surface of a substrate, wherein a space in the middle of the supporting layer is a first cavity, and the first cavity completely wraps the piezoelectric resonance structure;
bonding a capping layer to the upper surface of the support layer and sealing the first cavity.
2. The bulk acoustic wave resonator of claim 1, wherein the substrate thickness ranges from 5 μιη to 10 μιη; the second cavity penetrates through the upper surface and the lower surface of the substrate, and is enclosed into a sealed cavity by the substrate, the piezoelectric resonance structure and the lower sealing cover layer.
3. The bulk acoustic wave resonator of claim 1, wherein the first electrode is located on and covers a portion of the upper surface of the substrate; the piezoelectric film covers part of the surface of the first electrode and part of the surface of the substrate; the second electrode is positioned on the upper surface of the piezoelectric film and covers the piezoelectric film entirely.
4. The bulk acoustic wave resonator of claim 1, wherein the first contact metal covers the upper surface of the substrate and partially covers the upper surface of the first electrode, and wherein the first contact metal is not in contact with the second electrode; the first electrode surface covered by the first contact metal is a first electrode surface outside the effective resonance area; the second contact metal covers the upper surface of the substrate and partially covers the upper surface of the second electrode, and the second contact metal is not contacted with the first electrode; the second electrode surface covered by the second contact metal is a second electrode surface outside the effective resonance region.
5. The bulk acoustic wave resonator of claim 1, further comprising an upper cover structure comprising a support layer and an upper cover layer; the support layer is positioned on the upper surface of the substrate, and a first cavity is formed around the piezoelectric resonance structure, and the first cavity completely contains the piezoelectric resonance structure; the upper sealing layer is bonded to the upper surface of the supporting layer and completely covers the first cavity; the filling metal in the first through hole completely or partially fills the first through hole, is a continuous whole and is electrically connected with the first contact metal; the filler metal in the second via is the same as the filler metal in the first via, and the filler metal in the second via is electrically connected to the second contact metal.
6. The bulk acoustic resonator of claim 1, wherein the bonding pads are located on the lower surface of the lower cover layer, the bonding pads are the same in number and in one-to-one correspondence with the through holes, cover the corresponding through holes, and are electrically connected with the filling metal in the corresponding through holes; the solder balls are in the same number as the solder pads and in one-to-one correspondence, and are positioned on the lower surfaces of the corresponding solder pads and are electrically connected with the corresponding solder pads.
7. The bulk acoustic wave resonator of claim 1, wherein the via is replaced by a contact cavity, the contact cavity comprising first and second connection cavities extending through the substrate and terminating at first and second contact metals, respectively; the solder balls are positioned in the contact cavities, partially or completely fill the contact cavities, and simultaneously electrically connect with the pads on the substrate and the corresponding contact metal.
8. The bulk acoustic resonator of claim 1, wherein the substrate thinning method comprises reactive ion beam etching and chemical mechanical planarization, the thickness of the thinned substrate ranges from 5 μm to 10 μm, the second cavity penetrates through the substrate and exposes the piezoelectric resonant structure, the projection of the second cavity in the vertical direction completely comprises the range of the effective resonant area, the second cavity forming method comprises reactive ion beam etching, the material of the lower cover layer comprises an inorganic dielectric material or an organic curing film, the bonding method comprises an interatomic bonding or film pasting process, the first through hole and the second through hole penetrating through the lower cover layer and the substrate are formed to expose the first contact metal and the second contact metal respectively, and the through hole forming method comprises reactive ion beam etching.
9. The bulk acoustic wave resonator of claim 1, wherein the method of forming the electrode lead-out structure comprises:
forming filling metal in the through hole, wherein the filling metal is electrically connected with contact metal corresponding to the through hole, the filling metal fully or partially fills the through hole, and the filling metal is made of gold, copper, nickel, titanium or aluminum, and the forming method comprises electroplating, physical vapor deposition or electron beam evaporation;
forming welding pads on the lower surface of the lower sealing layer, wherein the welding pads are the same in number and in one-to-one correspondence with the through holes, cover the corresponding through holes and are electrically connected with filling metal in the corresponding through holes;
and forming a solder ball on the lower surface of each welding pad, wherein the solder ball is electrically connected with the corresponding welding pad, the diameter of the solder ball ranges from 5 mu m to 200 mu m, the material of the solder ball is the same as that of the filling metal, and the forming method comprises a ball implantation process.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109459145A (en) * | 2018-11-12 | 2019-03-12 | 中国科学院长春光学精密机械与物理研究所 | The preparation method of two waveband non-refrigerated infrared detector based on micro-electro-mechanical resonator |
| CN112039458A (en) * | 2019-07-19 | 2020-12-04 | 中芯集成电路（宁波）有限公司上海分公司 | Packaging method and packaging structure of bulk acoustic wave resonator |
| CN112039456A (en) * | 2019-07-19 | 2020-12-04 | 中芯集成电路（宁波）有限公司 | Packaging method and packaging structure of bulk acoustic wave resonator |
| CN112039455A (en) * | 2019-07-19 | 2020-12-04 | 中芯集成电路（宁波）有限公司上海分公司 | Packaging method and packaging structure of bulk acoustic wave resonator |
| CN112039459A (en) * | 2019-07-19 | 2020-12-04 | 中芯集成电路（宁波）有限公司上海分公司 | Packaging method and packaging structure of bulk acoustic wave resonator |
| CN112332799A (en) * | 2020-11-19 | 2021-02-05 | 中芯集成电路（宁波）有限公司上海分公司 | Film piezoelectric acoustic wave resonator |
| WO2021179729A1 (en) * | 2020-03-10 | 2021-09-16 | 中芯集成电路（宁波）有限公司 | Thin-film bulk acoustic wave resonator and method for manufacture thereof |
| CN114744979A (en) * | 2022-05-09 | 2022-07-12 | 上海芯波电子科技有限公司 | Filter chip based on SAW and BAW and manufacturing process thereof |
| CN115412046A (en) * | 2021-05-28 | 2022-11-29 | 中芯集成电路（宁波）有限公司上海分公司 | Film bulk acoustic resonator and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4517992B2 (en) * | 2005-09-14 | 2010-08-04 | セイコーエプソン株式会社 | Conducting hole forming method, piezoelectric device manufacturing method, and piezoelectric device |
-
2023
- 2023-04-20 CN CN202310424895.0A patent/CN116169973B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109459145A (en) * | 2018-11-12 | 2019-03-12 | 中国科学院长春光学精密机械与物理研究所 | The preparation method of two waveband non-refrigerated infrared detector based on micro-electro-mechanical resonator |
| CN112039458A (en) * | 2019-07-19 | 2020-12-04 | 中芯集成电路（宁波）有限公司上海分公司 | Packaging method and packaging structure of bulk acoustic wave resonator |
| CN112039456A (en) * | 2019-07-19 | 2020-12-04 | 中芯集成电路（宁波）有限公司 | Packaging method and packaging structure of bulk acoustic wave resonator |
| CN112039455A (en) * | 2019-07-19 | 2020-12-04 | 中芯集成电路（宁波）有限公司上海分公司 | Packaging method and packaging structure of bulk acoustic wave resonator |
| CN112039459A (en) * | 2019-07-19 | 2020-12-04 | 中芯集成电路（宁波）有限公司上海分公司 | Packaging method and packaging structure of bulk acoustic wave resonator |
| WO2021179729A1 (en) * | 2020-03-10 | 2021-09-16 | 中芯集成电路（宁波）有限公司 | Thin-film bulk acoustic wave resonator and method for manufacture thereof |
| CN112332799A (en) * | 2020-11-19 | 2021-02-05 | 中芯集成电路（宁波）有限公司上海分公司 | Film piezoelectric acoustic wave resonator |
| CN115412046A (en) * | 2021-05-28 | 2022-11-29 | 中芯集成电路（宁波）有限公司上海分公司 | Film bulk acoustic resonator and manufacturing method thereof |
| CN114744979A (en) * | 2022-05-09 | 2022-07-12 | 上海芯波电子科技有限公司 | Filter chip based on SAW and BAW and manufacturing process thereof |
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