CN116169963A - Power amplifier - Google Patents
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- CN116169963A CN116169963A CN202310140968.3A CN202310140968A CN116169963A CN 116169963 A CN116169963 A CN 116169963A CN 202310140968 A CN202310140968 A CN 202310140968A CN 116169963 A CN116169963 A CN 116169963A
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- transistor
- temperature coefficient
- power amplifier
- coefficient resistor
- power
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention provides a power amplifier, comprising: a bias circuit for providing a bias voltage to the power amplifying unit; a power amplifying unit configured to receive an input signal from an input terminal to output an amplified signal; an output matching circuit configured to have an input terminal connected to an output terminal of the power amplifier and a voltage protection circuit, and an output terminal for outputting an output signal; and a voltage protection circuit configured to be connected between an input terminal of the output matching circuit and a ground node, and including a first capacitor, a first transistor, and first and second positive temperature coefficient resistors, wherein an intermediate node of the first capacitor and the first negative temperature coefficient resistor connected in series is connected to a gate or a base of the first transistor to control on and off of the first transistor.
Description
Technical Field
The present invention relates to a power amplifier, and more particularly, to a power amplifier having a voltage protection device with an adaptive temperature for wireless communication.
Background
The power amplifier is an important component for realizing radio frequency signal wireless transmission, and with the upgrading of mobile communication networks, communication equipment needs to work normally in different mobile communication network standards, so that the radio frequency power amplifier applicable to each communication network needs to provide higher output power and better linearity.
Higher output power means higher voltage and larger voltage swing, which will present greater challenges to the reliability of the chip, considering the higher voltage and current swing at the output under load mismatch in practical applications. In the prior art, a plurality of diodes are commonly used for providing voltage limitation in a forward series connection manner so as to achieve the effect of voltage protection. Taking a conventional N77 power amplifier as an example, 8 forward diodes are used to limit the voltage swing.
In practical application, the power amplifier needs to work normally at low temperature-40 ℃ and high temperature +85 ℃, but at low temperature, the breakdown voltage of the tube is obviously reduced, so that the reliability at low temperature becomes a design bottleneck.
Disclosure of Invention
This patent proposes a technical scheme for power amplifier voltage protection of self-adaptation temperature.
According to an aspect of the present invention, there is provided a power amplifier including: the bias circuit is connected between the input end of the power amplifying unit and the power supply and is used for providing bias voltage for the power amplifying unit; a power amplifying unit configured to receive an input signal from an input terminal, an output terminal thereof being connected to a power supply source and an output matching circuit through an inductor to output an amplified signal, and further including a ground terminal to be connected to a ground node; an output matching circuit configured to have an input terminal connected to an output terminal of the power amplifier and a voltage protection circuit, and an output terminal for outputting an output signal; and a voltage protection circuit configured to be connected between an input terminal of the output matching circuit and a ground node, and including a first capacitor, a first transistor, and first and second positive temperature coefficient resistors, wherein an intermediate node of the first capacitor and the first negative temperature coefficient resistor connected in series is connected to a gate or a base of the first transistor to control on and off of the first transistor.
According to an aspect of the present invention, there is provided a power amplifier, wherein the first capacitor and a first negative temperature coefficient resistor are connected in series between an input terminal of the output matching circuit and a ground node; the collector electrode or the drain electrode of the first transistor is connected with the input end of the output matching circuit; the base or gate of the first transistor is connected at the intermediate node of the first capacitor and the first negative temperature coefficient resistor, and the emitter or source of the first transistor is connected to the second positive temperature coefficient resistor; and a second positive temperature coefficient resistor is connected between the emitter or source of the first transistor and the ground node.
According to an aspect of the invention, there is provided a power amplifier wherein the first transistor comprises a HBT, CMOS, PHEMT or SiGe transistor.
According to an aspect of the present invention, there is provided a power amplifier, wherein the voltage protection circuit further comprises a second transistor and a second negative temperature coefficient resistor, wherein the first capacitor and the first negative temperature coefficient resistor are connected in series between an input terminal of the output matching circuit and a ground node; the collectors or the drains of the first transistor and the second transistor are connected with the input end of the output matching circuit; the base or gate of the second transistor is connected at the intermediate node of the first capacitor and the first negative temperature coefficient resistor, and the emitter or source of the second transistor is connected to the base or gate of the first transistor; an emitter or a source of the second transistor is connected to a second negative temperature coefficient resistor; a second negative temperature coefficient resistor is connected between the emitter or source of the second transistor and the ground node; and a second positive temperature coefficient resistor is connected between the emitter or source of the first transistor and the ground node.
According to an aspect of the invention, there is provided a power amplifier wherein the second transistor comprises a HBT, CMOS, PHEMT or SiGe transistor.
According to an aspect of the present invention, there is provided a power amplifier further comprising an input matching circuit having an input for receiving an input signal and an output connected to an input of the power amplifying unit through a blocking capacitor.
According to an aspect of the present invention, there is provided a power amplifier, wherein the power amplifying unit includes a power amplifying circuit formed of HBT, CMOS, PHEMT or SiGe transistors.
According to an aspect of the present invention, there is provided a power amplifier, wherein the power amplifying unit includes a single-ended power amplifying circuit or a differential power amplifying circuit.
According to an aspect of the present invention, there is provided a power amplifier, wherein the power amplifier is configured for an N77 band or an N79 band.
According to an aspect of the present invention, there is provided a power amplifier, wherein the negative temperature coefficient resistor is formed by a negative temperature coefficient thermistor; wherein the positive temperature coefficient resistor is formed by a positive temperature coefficient thermistor or a high molecular positive temperature coefficient thermistor.
Drawings
Fig. 1 is a schematic diagram showing a conventional HBT power amplifier circuit configuration;
FIG. 2 is a schematic diagram illustrating a voltage protection circuit of a temperature adaptive power amplifier according to an embodiment of the present invention;
fig. 3 is a schematic diagram showing the variation of the on-current of the voltage protection circuit with the output power Vout at normal temperature;
fig. 4 is a schematic diagram showing the variation of the turn-on power of Vout with temperature at different temperatures for a voltage protection circuit of a conventional diode structure;
FIG. 5 is a schematic diagram showing the variation of the turn-on power of Vout with temperature at different temperatures for a temperature-adaptive voltage protection circuit according to an embodiment of the present invention;
fig. 6 is a schematic diagram illustrating a temperature-adaptive voltage protection circuit of a power amplifier according to another embodiment of the present invention; and
fig. 7 shows a circuit diagram of a temperature-adaptive voltage protection circuit according to another embodiment of the present invention.
Detailed Description
Before proceeding with the following detailed description, it may be advantageous to set forth definitions of certain words and phrases used throughout this patent document. The terms "coupled," "connected," and derivatives thereof, refer to any direct or indirect communication or connection between two or more elements, whether or not those elements are in physical contact with one another. The terms "transmit," "receive," and "communicate," and derivatives thereof, encompass both direct and indirect communication. The terms "include" and "comprise," as well as derivatives thereof, mean inclusion without limitation. The term "or" is inclusive, meaning and/or. The phrase "associated with … …" and its derivatives are intended to include, be included in, interconnect with, contain within … …, connect or connect with … …, couple or couple with … …, communicate with … …, mate, interleave, juxtapose, approximate, bind or bind with … …, have attributes, have relationships or have relationships with … …, etc. The term "controller" refers to any device, system, or portion thereof that controls at least one operation. Such a controller may be implemented in hardware, or a combination of hardware and software and/or firmware. The functionality associated with any particular controller may be centralized or distributed, whether locally or remotely. The phrase "at least one," when used with a list of items, means that different combinations of one or more of the listed items may be used, and that only one item in the list may be required. For example, "at least one of A, B, C" includes any one of the following combinations: A. b, C, A and B, A and C, B and C, A and B and C.
Definitions for other specific words and phrases are provided throughout this patent document. Those of ordinary skill in the art should understand that in many, if not most instances, such definitions apply to prior as well as future uses of such defined words and phrases.
In this patent document, the application combinations of circuit blocks and the division of sub-circuit blocks are for illustration only, and the application combinations of circuit blocks and the division of sub-circuit blocks may have different manners without departing from the scope of the disclosure.
Figures 1 through 7, discussed below, and the various embodiments used to describe the principles of the present disclosure in this patent document are by way of illustration only and should not be construed in any way to limit the scope of the disclosure. Those skilled in the art will appreciate that the principles of the present disclosure may be implemented in any suitably arranged system or device.
Fig. 1 is a schematic diagram showing a conventional HBT power amplifier circuit configuration.
Referring to fig. 1, the power amplifier includes a power amplifier tube HBT1, a bias circuit, an input matching circuit, an output matching circuit, and a voltage protection circuit. The power amplifier tube HBT1 is configured for amplifying an input signal Rfin inputted. The input signal is input to the base of the power amplifier HBT1 via the input matching network via the blocking capacitor Cin. The emitter of the power amplifier HBT1 is connected to a ground node and the collector of the power amplifier HBT1 is connected to the power supply VDD through an inductor L1, and one end of the inductor L1 is connected to the collector of the power amplifier HBT1 and the other end thereof is connected to an output matching network through a node N2 to provide an amplified output signal.
The power amplifier further comprises a bias circuit configured to provide a bias voltage Vbias to the power amplifier transistor HBT1. In addition, the power amplifier further includes a voltage protection circuit connected between the input terminal N2 of the input matching circuit and the ground node to provide a voltage protection function to the power amplifier. The voltage protection circuit commonly used adopts a forward series connection mode of a plurality of diodes, namely diodes D1-Dn connected in series, and the number n of the diodes is adjusted to achieve the aim of limiting different voltage swing. Although a power amplifying unit exemplified as a power amplifying tube is shown in the embodiment of the present invention, it should be understood by those skilled in the art that other configurations of the power amplifying unit may be adopted. For example, the power amplifying unit may also include an HBT amplifier, a CMOS amplifier, a linear amplifier, a single-ended amplifier, or a differential power amplifier.
Referring to fig. 1, the protection circuit shown has the advantage of simple structure, but at the same time has the following disadvantages: (1) Because the change of the on-resistance of the diode is relatively gentle, the protection circuit starts to work during normal power output, and influences the output power, and meanwhile influences the working efficiency of the chip; (2) When the load is in mismatch, the voltage swing is larger, but the larger on-resistance of the diodes cannot effectively limit the voltage because the diodes are connected in series; (3) Because of the micro-conduction characteristic of the diodes, the series-connected protection circuits have larger electric leakage, particularly, the starting voltage Vbe/Vgs of the transistors is reduced at high temperature, the electric leakage is more obvious, and if the electric leakage current needs to be reduced, the number of the diodes needs to be increased, which reduces the voltage protection effect; and (4) at low temperature, the turn-on voltage of the transistor is increased, and the plurality of diodes are connected in series so that the protection voltage is obviously increased, however, the breakdown voltage of the transistor is reduced along with the temperature reduction, so that the protection effect at low temperature is weakened. At high temperatures, the breakdown voltage of the transistor increases, but the turn-on voltage of the plurality of diodes in series decreases, so that the amplifier enters an over-protection state, affecting the output power at high temperatures.
Fig. 2 is a schematic diagram illustrating a voltage protection circuit of a temperature-adaptive power amplifier according to an embodiment of the present invention.
Referring to fig. 2, taking a heterojunction bipolar transistor HBT power amplifier as an example, the voltage protection circuit (device) includes negative temperature coefficient resistors R1 and R2 and positive temperature coefficient resistor R3, a power coupling capacitor C1, and a first transistor HBT1 and a second transistor HBT2. Wherein the power coupling capacitor C1 is connected in series with the first negative temperature coefficient resistor R1 between the node N2 (or the input of the output matching circuit) and the ground node; the emitter of the first transistor HBT1 and the second transistor HB2 is connected to the node N2; the base of the second transistor HBT2 is connected at the intermediate node of the capacitor C1 and the first negative temperature coefficient resistor R1, and the emitter of the second transistor HBT2 is connected to the base of the first transistor HBT 1; the emitter of the first transistor HBT1 is connected to a third positive temperature coefficient resistor R3; a second negative temperature coefficient resistor R2 is connected between the emitter of the second transistor HBT2 and the ground node; and a third positive temperature coefficient resistor R3 is connected between the emitter of the first transistor HBT1 and the ground node.
According to an embodiment of the present invention, the negative temperature coefficient resistors R1 and R2 may be formed by Negative Temperature Coefficient (NTC) thermistors; the PTC resistor R3 may be a Positive Temperature Coefficient (PTC) thermistor or a polymer PTC thermistor, and it should be understood by those skilled in the art that the above examples are for illustration only and are not intended to limit the embodiments of the present invention. In order to facilitate circuit integration, the negative temperature coefficient resistors R1 and R2 and the positive temperature coefficient resistor R3 according to the embodiments of the present invention may be formed by thermistors provided by different circuit processes, and thermistors with different temperature coefficients may be provided according to different semiconductor materials forming the thermistors.
Referring to fig. 2, the voltage protection circuit (device) according to the embodiment of the present invention has the following advantages: (1) No leakage current exists at all at various environmental temperatures, so that the trade-off between leakage and protection effect in conventional design is avoided; (2) During normal power output, the first transistor HBT1 and the second transistor HBT2 are not turned on, so that the output power and the efficiency are not affected; (3) When the load is in mismatch, the voltage swing is larger, the first transistor HBT1 is started firstly, and then the second transistor HBT2 is started rapidly, so that the transition stage between the starting and the closing of the voltage protection can be further shortened, and the voltage can be more effectively limited; and (4) at low temperature, the resistance of the first negative temperature coefficient resistor R1 increases to cope with the increase of the turn-on voltage Vbe of the first transistor HBT1 and the second transistor HBT2 at low temperature, and then VB2 increases and turns on the second transistor HBT2, and since the resistance of the third positive temperature coefficient resistor R3 decreases, the first transistor HBT1 also turns on rapidly so that the protection circuit enters an operation state while reducing its on-resistance. At high temperature, the resistance of the first negative temperature coefficient resistor R1 is reduced to cope with the reduction of the turn-on voltage Vbe of the first transistor HBT1 and the second transistor HBT2 at high temperature, and the on-resistance of the protection circuit is increased in the working state due to the increase of the resistance of the third positive temperature coefficient resistor R3. Therefore, vout that turns on the protection circuit at a low temperature is lower than normal temperature, and Vout that turns on the protection circuit at a high temperature is higher than normal temperature.
Fig. 3 is a schematic diagram showing the variation of the on-current of the voltage protection circuit with the output power Vout at normal temperature.
Referring to fig. 3, the voltage protection circuit according to the embodiment of the present invention has better protection effect by comparing with the conventional voltage protection circuit, and no leakage occurs when the protection circuit is turned on or not because the protection circuit has no dc path.
Fig. 4 is a schematic diagram showing the variation of the turn-on power of Vout with temperature at different temperatures of a voltage protection circuit of a conventional diode structure.
Referring to fig. 4, the turn-on power of the voltage protection circuit of the conventional diode structure increases as the temperature decreases, and thus, it may pose a threat to the chip reliability.
Fig. 5 is a schematic diagram showing the variation of the turn-on power of Vout with temperature at different temperatures of the temperature-adaptive voltage protection circuit according to the embodiment of the present invention.
Referring to fig. 5, the temperature-adaptive voltage protection circuit according to the embodiment of the present invention has the opening power of Vout substantially unchanged with temperature changes at different temperatures, so that the risk of breakdown of the tube voltage at low temperatures is effectively reduced.
Fig. 6 is a schematic diagram illustrating a temperature-adaptive voltage protection circuit of a power amplifier according to another embodiment of the present invention.
Referring to fig. 6, a temperature-adaptive voltage protection circuit according to another embodiment of the present invention is composed of CMOS transistors, wherein the voltage protection circuit includes negative temperature coefficient resistors R1 and R2 and positive temperature coefficient resistor R3, a power coupling capacitor C1, and first and second transistors CMOS1 and CMOS2. Wherein the power coupling capacitor C1 is connected in series with the first negative temperature coefficient resistor R1 between the node N2 (or the input of the output matching circuit) and the ground node; drains of the first transistor CMOS1 and the second transistor CMOS2 are connected to a node N2; the gate of the second transistor CMOS2 is connected at the intermediate node of the capacitor C1 and the first negative temperature coefficient resistor R1, and the source of the second transistor CMOS2 is connected to the gate of the first transistor CMOS 1; the source of the first transistor CMOS1 is connected to a third positive temperature coefficient resistor R3; a second negative temperature coefficient resistor R2 is connected between the source of the second transistor CMOS2 and the ground node; and a third positive temperature coefficient resistor R3 is connected between the source of the first transistor CMOS1 and the ground node.
The voltage protection circuit can also be realized by CMOS transistors, wherein the on-voltage of the CMOS transistors is different due to different processes, and the protection voltage needs to be set by adjusting the sizes of the negative temperature coefficient resistors R1 and R2, the positive temperature coefficient resistor R3, the capacitor C1, or the first transistor CMOS1 and the second transistor CMOS2.
It will be appreciated by those skilled in the art that other process transistors are equally capable of implementing the solution of the present invention without departing from the scope of the invention, e.g. PHEMT/SiGe transistors are equally applicable to the embodiments of the present invention.
In addition, although the present invention shows the structure of a single-ended power amplifying circuit, the temperature-adaptive voltage protection circuit according to the embodiment of the present invention can be equally applied to a power amplifier including a differential power amplifying circuit. In addition, the temperature-adaptive voltage protection circuit according to the embodiment of the present invention can be equally applied to a power amplifier including a linear or nonlinear power amplification circuit.
Fig. 7 shows a circuit diagram of a temperature-adaptive voltage protection circuit according to another embodiment of the present invention.
Referring to fig. 7, the voltage protection circuit includes negative and positive temperature coefficient resistors R1 and R2, a capacitor C1, and a transistor HBT1. Wherein the capacitor C1 is connected in series with the first negative temperature coefficient resistor R1 between the node N2 (or the input of the output matching circuit) and the ground node; the emitter of the first transistor HBT1 is connected to a supply voltage; the base of the first transistor HBT1 is connected at the intermediate node of the capacitor C1 and the first resistor R1, and the emitter of the first transistor HBT1 is connected to the second positive temperature coefficient resistor R2; and a second positive temperature coefficient resistor R2 is connected between the emitter of the first transistor HBT1 and the ground node.
In the voltage protection circuit, the circuit structure is simpler, the circuit cost is further saved, and when the voltage swing is larger, the on-resistance is small because only the first transistor HBT1 is conducted, and the voltage protection effect on the larger voltage swing is good.
The power amplifier including the voltage protection circuit according to the embodiment of the present invention may be applied to the N77 frequency band instead of the conventional power amplifier, but it should be understood by those skilled in the art that the power amplifier including the voltage protection circuit according to the embodiment of the present invention may be applied to other frequency bands, for example, the N79 frequency band.
It should be understood by those skilled in the art that, although the present invention uses the power amplifier HBT1 as an example of the power amplifying unit, the structure of the present invention may be applied to various kinds of amplifier circuits, for example, the power amplifying unit may also include an HBT amplifier, a CMOS amplifier, a linear amplifier, a single-ended amplifier, or a differential power amplifier.
Although the present disclosure has been described with exemplary embodiments, various changes and modifications may be suggested to one skilled in the art. The disclosure is intended to embrace such alterations and modifications that fall within the scope of the appended claims.
Any description of the present invention should not be construed as implying that any particular element, step, or function is a necessary element to be included in the scope of the claims. The scope of patented subject matter is defined only by the claims.
Claims (10)
1. A power amplifier, comprising:
the bias circuit is connected between the input end of the power amplifying unit and the power supply and is used for providing bias voltage for the power amplifying unit;
a power amplifying unit configured to receive an input signal from an input terminal, an output terminal thereof being connected to a power supply source and an output matching circuit through an inductor to output an amplified signal, and further including a ground terminal to be connected to a ground node;
an output matching circuit configured to have an input terminal connected to an output terminal of the power amplifier and a voltage protection circuit, and an output terminal for outputting an output signal; and
a voltage protection circuit configured to be connected between an input terminal of the output matching circuit and a ground node and including a first capacitor, a first transistor, and first and second positive temperature coefficient resistors, wherein an intermediate node of the first capacitor and the first negative temperature coefficient resistor connected in series is connected to a gate or a base of the first transistor to control on and off of the first transistor.
2. The power amplifier of claim 1, wherein the first capacitor is connected in series with a first negative temperature coefficient resistor between an input of the output matching circuit and a ground node; the collector electrode or the drain electrode of the first transistor is connected with the input end of the output matching circuit; the base or gate of the first transistor is connected at the intermediate node of the first capacitor and the first negative temperature coefficient resistor, and the emitter or source of the first transistor is connected to the second positive temperature coefficient resistor; and a second positive temperature coefficient resistor is connected between the emitter or source of the first transistor and the ground node.
3. The power amplifier of claim 1, wherein the first transistor comprises a HBT, CMOS, PHEMT or SiGe transistor.
4. The power amplifier of claim 1, wherein the voltage protection circuit further comprises a second transistor and a second negative temperature coefficient resistor,
wherein the first capacitor and a first negative temperature coefficient resistor are connected in series between the input terminal of the output matching circuit and a ground node; the collectors or the drains of the first transistor and the second transistor are connected with the input end of the output matching circuit; the base or gate of the second transistor is connected at the intermediate node of the first capacitor and the first negative temperature coefficient resistor, and the emitter or source of the second transistor is connected to the base or gate of the first transistor; an emitter or a source of the second transistor is connected to a second negative temperature coefficient resistor; a second negative temperature coefficient resistor is connected between the emitter or source of the second transistor and the ground node; and a second positive temperature coefficient resistor is connected between the emitter or source of the first transistor and the ground node.
5. The power amplifier of claim 4, wherein the second transistor comprises a HBT, CMOS, PHEMT or SiGe transistor.
6. The power amplifier of claim 1, further comprising an input matching circuit having an input for receiving an input signal and an output connected to the input of the power amplifying unit through a blocking capacitor.
7. The power amplifier of claim 1, wherein the power amplifying unit comprises a power amplifying circuit formed of HBT, CMOS, PHEMT or SiGe transistors.
8. The power amplifier of claim 1, wherein the power amplifying unit comprises a single-ended power amplifying circuit or a differential power amplifying circuit.
9. The power amplifier of claim 1, wherein the power amplifier is configured for an N77 band or an N79 band.
10. The power amplifier of claim 1, wherein the negative temperature coefficient resistor is formed by a negative temperature coefficient thermistor;
wherein the positive temperature coefficient resistor is formed by a positive temperature coefficient thermistor or a high molecular positive temperature coefficient thermistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310140968.3A CN116169963A (en) | 2023-02-16 | 2023-02-16 | Power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310140968.3A CN116169963A (en) | 2023-02-16 | 2023-02-16 | Power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116169963A true CN116169963A (en) | 2023-05-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310140968.3A Pending CN116169963A (en) | 2023-02-16 | 2023-02-16 | Power amplifier |
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| Country | Link |
|---|---|
| CN (1) | CN116169963A (en) |
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2023
- 2023-02-16 CN CN202310140968.3A patent/CN116169963A/en active Pending
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