CN1161572A - Power semiconductor mdoule having plurality of submodules - Google Patents
Power semiconductor mdoule having plurality of submodules Download PDFInfo
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- CN1161572A CN1161572A CN96114595A CN96114595A CN1161572A CN 1161572 A CN1161572 A CN 1161572A CN 96114595 A CN96114595 A CN 96114595A CN 96114595 A CN96114595 A CN 96114595A CN 1161572 A CN1161572 A CN 1161572A
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- power semiconductor
- semiconductor module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
In the case of a power semiconductor module (34) having a plurality of submodules (37b), which are arranged next to one another on a common baseplate (35) and are electrically interconnected, and can be externally connected, on the power side in a low-inductance manner by means of conductors in the form of plates, a reduction in the space requirement is achieved by virtue of the fact that the conductors (40, 43) in the form of plates are each arranged in a self-supporting manner in planes above the submodules (37b), which planes have a vertical separation from one another and from the submodules (37b) which is sufficient for electrically insulation, and that the conductors (40, 43) in the form of plates are electrically connected to the individual submodules (37b) via additional, vertical conduction elements (38a,b ,42a-c).
Description
The present invention relates to power electronics field, relate to a kind of power semiconductor module that has a plurality of submodule parts, these submodule parts are installed on the common base plate side by side, and its power side is electrically connected mutually by responding to little plate shaped conductor, and is electrically connected with the outside.
This class power semiconductor module relevant with the present invention for example can be referring to the EP-A1-0597144 European patent.
As everyone knows, hybrid power semiconductor module be on a common base plate and common housing in a plurality of interconnective single semiconductor chips that are arranged side by side (also can referring to DE-PS-3669017) are installed.
This modular structure will satisfy various requirement.At first, single semiconductor must be coupling on the outside of housing, has narrow interval each other, generates heat owing to high-power during their work, therefore must can cool off well for single semiconductor.Secondly, the electrical connection in housing and must can bear big current power with being electrically connected of outside and distribute, the while has enough intervals or insulation each other, so that can not produce the voltage breakdown phenomenon when high potential difference appears in the part.Moreover the structure of module and combination should be simple and economical as far as possible.Also have, modern high power semi-conductor fast requires little switching time, for example IGBT (insulated gate electrode bidirectional field-effect transistor) is shown, the more important thing is to be electrically connected with wiring not to have inductance or few inductance, increases the time so that can make the semiconductor component that adopts in the module have high as far as possible electric current.
In order to satisfy above-mentioned requirements, describe a kind of hybrid great-power electronic in the prior art document of this paper beginning and learned device, wherein adopted a folded formula device, it is overlapped mutually by insulating barrier and electron orbit layer and forms, and is used to connect each submodule part and is connected with the outside.Adopt this mode, can simplify modular structure and reduce cost, resulting module has the excellent function reliability, and is few inductance or noninductive.
However, this known modular structure is not perfect, will be insulating barrier and conductive layer slot milling in submodule part zone, so that provide the phosphate treatment (cold deformation) of submodule part required environmental condition (Fig. 4,5).Therefore insulating barrier and conductive layer adopt grid current version, promptly form jumper between the submodule part.Consequently must increase auxiliary plane on the basis of plane routing, for this reason, this module requires the plane greater than other module, and its wiring is normally extended vertically upward from the submodule part, reaches the terminals place on the module surface always.
The purpose of this invention is to provide a kind of power semiconductor module, it has not only kept the advantage that internal inductance is very little and the external connection induction is few, and has overcome the big defective of surface loss.
According to power semiconductor module of the present invention, be achieved in that on the said in front high-power semiconductor module, each leisure of plate shaped conductor is higher than single-endedly on the plane of submodule part installs regularly, these planes are separated by the submodule part each other, and have enough electric insulation vertical intervals, plate shaped conductor dbus circuit element and each submodule part of additional setting is excessively realized being electrically connected.Device by single-ended securing elongated plate shaped conductor on the submodule part, the submodule part can be packed on base plate mutually abreast, can reduce the required basal plane of module like this, can not abandon again simultaneously connecting the advantage that the lead internal inductance is little and the external connection induction is few or making this performance degradation.
In a preferred embodiment of power semiconductor module of the present invention, the circuit element of described setting is made by the band steel that repeatedly is preferably right-angle bending, the circuit element of these settings is crooked like this, it can compensate the thermal expansion with good conditionsi of the submodule part or the base plate on the plane that is parallel to base plate, thereby under the prerequisite of small inductor, can realize high stress alternation stability.And because the employing of band steel, the connection between the submodule part and with external connection between be connected and adopt welding manner, so according to further embodiment, the circuit element of setting and plate shaped conductor and submodule part are welded together.
According to another embodiment of module of the present invention, the mid portion of plate shaped conductor has punching, and the circuit element of setting passes from the hole on the plate shaped conductor that extends to the opposite, is used for the connexon module.This simple in structure, inductance is little, and saves the space.
According to another embodiment of the invention, the submodule part is installed in the housing with the relevant plate shaped conductor and the circuit element of setting, and casts in the megohmite insulant.Thereby avoided existing partial discharge problem between the part of the different current potential of having of plate shaped conductor.
Provided other embodiment in the dependent claims.
To further specify embodiments of the invention and good result thereof with reference to the accompanying drawings below.
Illustrate embodiments of the invention in the accompanying drawings, they are:
Fig. 1 is the perspective view of the embodiment of submodule part used in the power semiconductor module of the present invention;
Submodule part in Fig. 2 presentation graphs 1 has the circuit element of the setting of emitter fixture form;
Fig. 3 is the vertical view of an embodiment of high-power semiconductor module of the present invention, and 9 sub-modules (not having power to connect and wiring) are installed on its base plate;
Fig. 4 is the perspective view of the module of Fig. 3, has the circuit element of the setting of collector electrode fixture form;
Fig. 5 is the vertical view that the emitter fixture of the module of Fig. 3 or Fig. 4 is arranged, and has showed the collector plate that is connected with the collector electrode fixture of Fig. 4;
Fig. 6 is the vertical view of the device of Fig. 5, has additional emission pole plate, and it partly covers collector plate, and is connected with the emitter fixture;
Fig. 7 is the emitter fixture of the module of Fig. 6, collector electrode fixture, the end view of the layout of collector plate and emission pole plate.
In Fig. 3, showed an embodiment of power semiconductor module 34 of the present invention on the edge of a common base plate 35, to have a plurality of fixing holes 36 with vertical view, a plurality of (in this example being 9) submodule part is encapsulated on this base plate hermetically side by side.For simplicity, with nethermost three sub-module label 37a, 37b and 37c represent.The structure of each submodule part further illustrates in Fig. 1.Submodule part 10 comprises (pottery) substrate 11, has covered large-area metal coating 12 on its side (upside).This metal coating 12 is continuous, and does not have the electron orbit structure, and it is used to admit semiconductor chip and is used for the butt joint bridging that the downside chip contacts.
In the embodiment in figure 1, two IGBT13 are installed on substrate 11,16 and two diodes 14,15.IGBT13,16 collector electrode is positioned at the downside of relevant chip, and can be connected with metal coating 12 solderings of submodule part 10. Outside diode 14,15, can be welded with the circuit element (Fig. 4) of relevant setting on each surface of metal coating 12, as the negative electrode of diode 14,15.At the upper surface of chip, i.e. IGBT13 is equipped with emitter on 16, on the diode 14,15 anode is installed, and is welded with the metal dish 17,19 and 18,20 (only having drawn metal dish on submodule part 37a in Fig. 3) that connects usefulness on the surface of chip.IGBT13,16 grid 21,22 generally is positioned at the upper surface of chip, and it is by the grid fixture 23 in the welding, 24 with relevant resistance 27,28 connect, and resistance 27,28 all is installed on the public grid piece or grid operation panel 25, the grid operation panel 25 of this thin-and-long is between the submodule part chip on the substrate 11, be made of a substrate that is coated with layer of metal coating 26, the wiring of grid 21,22 is upwards drawn through the connecting line 29 that a root bead connects from grid operation panel 25.
All IGBT emitters of a sub-module and the mutual short circuit of diode anode are upwards drawn jointly.According to Fig. 2, each submodule part 10 has an emitter fixture 31, and this emitter fixture 31 is to be made by a band steel that bends to U-shaped.The end of two legs of these U-shaped parts is at right angles outwardly-bent, and along continuous straight runs extends to form the first buttstrap 32a, b, its size should be able to guarantee to make grid operation panel 25 and the grid fixture 23 at the place, U-shaped top that erects, 24 can freedom excessively extend, and the first buttstrap 32a, and b is overlapped on IGBT13 separately, 16 and the metal dish 17 and 20 and 18 and 19 of adjacent diode 14,15 between.At the first buttstrap 32a, at right angles be bent to form the second buttstrap 33a on the transverse side of b once more, b, the metal dish 17-20 with this and semiconductor chip welds together with this emitter fixture 31.
By means of emitter fixture 31, a higher plane is provided on the submodule part, be used for emitter/anode and bus bar (Fig. 6, the emission pole plate 43 in 7) be connected (welding), this bus bar is relative with emitter layer.Because the first and second buttstrap 32a, b, 33a, b be bending at right angles all, form the arch bridge/flexible compensation projection that makes progress on end, allow the different thermal expansion that on two orthogonal directions, produces with the fixture that compensates this module, pottery, semiconductor chip and other member.The grid fixture 23,24 that is welded on the grid operation panel 25 has very little width, and its length is easy to all directions bending.
The wiring of collector electrode/negative electrode is by collector electrode fixture 38a with it and being connected of a higher collector electrode plane, the (see figure 4) that b realizes, collector electrode fixture 38a, b is made by strip band steel, the assembly that has alternation on its vertical side has the 3rd buttstrap 39 of rectangular bending on these assemblies.The 3rd buttstrap 39 constitutes welding ends, and with this collector electrode fixture 38a, the exposed surface of the metal coating of b and single submodule part welds together.Can compensate at collector electrode fixture 38a by the bending of the 3rd buttstrap 39 and long and narrow section distribution, the parts below the b are along two thermal expansions that independently produce on the direction in space.
Each assembly and Different Plane be connected and the situation of wiring can more be clear that from the end view of Fig. 7.Stack of laminations 40,43 is not to be made by insulation and metal level as the known module in the prior art document that this paper beginning is quoted, but is only made by metal level.These metal levels fixedly mount on the submodule part, they each other and and the submodule part between have enough vertical intervals, through the casting after still can satisfy the insulating requirements of bearing big voltage.Owing to do not have insulating barrier, therefore avoided realizing the bonding partial discharge problem of bringing with adhesion technique.Exposed metallic laminations group 40,43 is cast in a container, and vacuumize processing before still uncured, thereby avoided bubble formation, got rid of the partial discharge problem of stack of laminations when watering foundry goods.And the Connection Element 31 of setting, 38a, b and 42a, the profile of b are specific arch bridge/flexible compensation protrusion-shaped, it and different butt joint bridging 32a, b, 33a, b, 39 actings in conjunction have guaranteed that the welding position between flat board 40,43 and the submodule part does not have mechanical pressure substantially, and have remained unchanged.
As previously mentioned, the wiring of IGBT realizes for this reason, having through hole 30 (Fig. 2) or grid lead sleeve pipe 44 (Fig. 6) on the single emitter fixture 31 or on emission pole plate 43 by the connecting line 29 that protrudes upward.According to shown in Figure 7, the output of emitter and collector is by drawing at collector plate 40 and the external lead wire 45,46 on emission pole plate 43.
The invention provides a kind of power semiconductor module, it has very little internal inductance, and its lead-in wire only takies few space, is easy to make, and has high stress alternation durability.
The accompanying drawing parameter list
10 submodule parts
11 substrates
12 metal coatings
13，16IGBT
14,15 diodes
The 17-20 metal dish
21-22 grid (IGBT)
23,24 grid fixtures
25 grid operation panels
26 metal coatings (grid operation panel)
27,28 resistances
29 connecting lines (grid)
30 through holes
31 emitter fixtures
32a, b connect attachment strap (stretch compensation on the y direction)
33a, b connect attachment strap (stretch compensation on the x direction)
34 power semiconductor modules
35 base plates
36 fixing holes
37a-c submodule part
38a, b collector electrode fixture
39 connect attachment strap
40 collector plates
The 41a-c punching
42a-c emitter fixture
43 emission pole plates
44 lead-in wire sleeve pipes
45,46 external lead wires
Claims (11)
1. one kind has a plurality of submodule parts (10, power semiconductor module 37a-c) (34), these submodule parts are installed on the common base plate (35) side by side, its power side is electrically connected mutually by responding to little plate shaped conductor, and be electrically connected with the outside, it is characterized in that: these plate shaped conductors (40,43) each leisure is higher than submodule part (10, single-ended installation regularly on plane 37a-c), these planes each other by the submodule part (10,37a-c) separate, and have enough electric insulation vertical intervals, plate shaped conductor (40,43) circuit element by additional setting (31,38a, b, 42a-c) (10,37a-c) realization is electrically connected with each submodule part.
2. according to the power semiconductor module of claim 1, it is characterized in that, and the circuit element of described setting (31,38a, b 42a-c) is made by the band steel that repeatedly is preferably right-angle bending.
3. according to the power semiconductor module of claim 2, it is characterized in that the circuit element (31 of these settings, 38a, b is crooked like this 42a-c), it can compensate the submodule part that is parallel to base plate (35) plane (10,37a-c) or the thermal expansion with good conditionsi of base plate (35).
4. according to the power semiconductor module of one of claim 2 and 3, it is characterized in that, the circuit element of these settings (31,38a, b, 42a-c) be with plate shaped conductor (40,43) and submodule part (10,37a-c) weld together.
5. according to the power semiconductor module of one of claim 1-4, it is characterized in that, plate shaped conductor (40,43) mid portion has punching (41a-c), and the circuit element of setting (31,38a, b, 42a-c) from the hole, pass on the plate shaped conductor (43) that extends to the opposite, be used for the connexon module (10,37a-c).
6. according to the power semiconductor module of one of claim 1-5, it is characterized in that submodule part (10,37a-c) with relevant plate shaped conductor (40,43) and the circuit element erect (31,38a, b 42a-c) is installed in the housing, and casts with megohmite insulant.
7. according to the power semiconductor module of one of claim 1-6, it is characterized in that, and the submodule part (10,37a-c) pack on base plate (35).
8. according to the power semiconductor module of one of claim 1-7, it is characterized in that, each submodule part (10,37a-c) have an insulating substrate (11) of preferably being made by pottery, the surface has a metal coating (12) thereon, and on this metal coating (12) a plurality of power semiconductor chips (13 is housed, 14,15,16), realize being electrically connected with metal coating (12) at their downside.
9. power semiconductor module according to claim 8 is characterized in that, a sub-module (10, power semiconductor chip 37a-c) (13,14,15,16) at least two are by grid (21,22) Control work, grid (21,22) be connected on a common grid piece or the grid operation panel (25), the latter is installed in the power semiconductor chip (13 on the substrate (11,12), 14,15,16) between, and be electrically connected with the outside.
10. power semiconductor module according to claim 9 is characterized in that, grid (21,22) is to realize by the single gate resistance (28,29) that is installed on grid piece or the grid operation panel (25) with being connected of grid piece or grid operation panel (25).
11. according to the described power semiconductor module in one of claim 9 and 10, it is characterized in that, by grid (21,22) Kong Zhi power semiconductor chip (13,16) constitute (insulated gate electrode bidirectional field-effect transistor) as IGBT, remaining power semiconductor chip (14,15) constitutes as diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN96114595A CN1161572A (en) | 1995-11-24 | 1996-11-22 | Power semiconductor mdoule having plurality of submodules |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US562,454 | 1995-11-24 | ||
| CN96114595A CN1161572A (en) | 1995-11-24 | 1996-11-22 | Power semiconductor mdoule having plurality of submodules |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1161572A true CN1161572A (en) | 1997-10-08 |
Family
ID=5122181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96114595A Pending CN1161572A (en) | 1995-11-24 | 1996-11-22 | Power semiconductor mdoule having plurality of submodules |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1161572A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100355070C (en) * | 2001-06-01 | 2007-12-12 | Abb瑞士有限公司 | High power semiconductor module |
| CN103296016A (en) * | 2012-02-23 | 2013-09-11 | 赛米控电子股份有限公司 | Semiconductor module |
| CN103383941A (en) * | 2012-05-02 | 2013-11-06 | Abb技术有限公司 | Power semiconductor module |
| CN104392970A (en) * | 2014-11-28 | 2015-03-04 | 中国科学院深圳先进技术研究院 | Integrated electric electronic power conversion control device packaging structure |
-
1996
- 1996-11-22 CN CN96114595A patent/CN1161572A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100355070C (en) * | 2001-06-01 | 2007-12-12 | Abb瑞士有限公司 | High power semiconductor module |
| CN103296016A (en) * | 2012-02-23 | 2013-09-11 | 赛米控电子股份有限公司 | Semiconductor module |
| CN103296016B (en) * | 2012-02-23 | 2017-09-19 | 赛米控电子股份有限公司 | Semiconductor module |
| CN103383941A (en) * | 2012-05-02 | 2013-11-06 | Abb技术有限公司 | Power semiconductor module |
| CN103383941B (en) * | 2012-05-02 | 2018-10-19 | Abb瑞士股份有限公司 | Power semiconductor modular |
| CN104392970A (en) * | 2014-11-28 | 2015-03-04 | 中国科学院深圳先进技术研究院 | Integrated electric electronic power conversion control device packaging structure |
| CN104392970B (en) * | 2014-11-28 | 2017-05-03 | 中国科学院深圳先进技术研究院 | Integrated electric electronic power conversion control device packaging structure |
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