CN116156988A - Flexible thermoelectric material for semiconductor device and preparation method thereof - Google Patents
Flexible thermoelectric material for semiconductor device and preparation method thereof Download PDFInfo
- Publication number
- CN116156988A CN116156988A CN202310039639.XA CN202310039639A CN116156988A CN 116156988 A CN116156988 A CN 116156988A CN 202310039639 A CN202310039639 A CN 202310039639A CN 116156988 A CN116156988 A CN 116156988A
- Authority
- CN
- China
- Prior art keywords
- sulfur
- silver
- thermoelectric material
- flexible thermoelectric
- based nano
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 66
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- PGWMQVQLSMAHHO-UHFFFAOYSA-N sulfanylidenesilver Chemical compound [Ag]=S PGWMQVQLSMAHHO-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000002105 nanoparticle Substances 0.000 claims abstract description 53
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims description 18
- 238000000498 ball milling Methods 0.000 claims description 18
- 238000002844 melting Methods 0.000 claims description 18
- 230000008018 melting Effects 0.000 claims description 18
- 229910052717 sulfur Inorganic materials 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 238000005303 weighing Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 230000002195 synergetic effect Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 239000013384 organic framework Substances 0.000 abstract description 3
- 229920000620 organic polymer Polymers 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 229920001940 conductive polymer Polymers 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Powder Metallurgy (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The invention discloses a flexible thermoelectric material for a semiconductor device and a preparation method thereof, belonging to the technical field of thermoelectric materials, wherein the flexible thermoelectric material comprises silver-sulfur-based nano particles and poly-3, 4 coated around the silver-sulfur-based nano particlesEthylene dioxythiophene, the silver-sulfur-based nanoparticle has a chemical formula of Ag x TeS, wherein x=3.9-4.1; the poly-3, 4-ethylenedioxythiophene has delocalized large pi bond, so the poly-3, 4-ethylenedioxythiophene has certain conductive capability and can be used as an organic polymer semiconductor; the prepared silver-sulfur-based nano particles have better thermoelectric performance, so that the electric conductivity and the thermal conductivity achieve synergistic effect, and the effect of improving the thermoelectric conversion efficiency is realized; silver-sulfur-based nano particles are added into an organic framework of the poly 3, 4-ethylenedioxythiophene, so that the structure is compact, and the electron mobility is improved; the flexible thermoelectric material has high conductivity and Seebeck coefficient, so that the power factor of the material is improved.
Description
Technical Field
The invention belongs to the technical field of thermoelectric materials, and particularly relates to a flexible thermoelectric material for a semiconductor device and a preparation method thereof.
Background
Thermoelectric materials are functional materials for realizing direct mutual conversion of heat energy and electric energy by utilizing movement of solid internal carriers, the Seebeck effect discovered in 1823 and the Peltier effect discovered in 1834 provide theoretical basis for application of thermoelectric energy converters and thermoelectric refrigeration, and flexible thermoelectric materials are divided into three categories, namely conductive polymers, composite materials of conductive polymers and inorganic semiconductor fillers and inorganic semiconductor films.
Along with the acceleration of global industrialization process, world energy shortage and exhaustion become the problem of not neglecting in every country, the long-term stable development of society is severely restricted, research and development of new energy have become the trend of global energy development, therefore, the development of a flexible thermoelectric material for semiconductor devices and a preparation method thereof has great significance, and the existing flexible thermoelectric material and the preparation method thereof have the following defects:
the research of the domestic flexible thermoelectric material is started later, and has a small gap compared with the European and American developed countries; with the development of flexible thermoelectric materials, the thermoelectric conversion efficiency of the flexible thermoelectric materials is still low, and there is a need to improve the thermoelectric conversion efficiency of the flexible thermoelectric materials; the electrical conductivity of the flexible thermoelectric material prepared by the prior art is poor, and a need exists to explore a suitable flexible thermoelectric material to improve the electrical conductivity; the flexible thermoelectric material prepared at present has higher cost, complex preparation method and low market value.
Disclosure of Invention
Aiming at the situation, in order to overcome the defects of the prior art, the invention provides a flexible thermoelectric material for a semiconductor device and a preparation method thereof, and in order to solve the problems of poor electric transmission performance and low thermoelectric conversion efficiency of the conventional flexible thermoelectric material, the invention prepares silver-sulfur-based nano particles and poly 3, 4-ethylenedioxythiophene coated around the silver-sulfur-based nano particles, wherein the poly 3, 4-ethylenedioxythiophene has delocalized large pi bond, so the flexible thermoelectric material has certain electric conduction capability and can be used as an organic polymer semiconductor; the prepared silver-sulfur-based nano particles have good thermoelectric performance, and heat energy and electric energy can be directly converted with each other, so that the electric conductivity and the heat conductivity achieve synergistic effect, and the effect of improving the thermoelectric conversion efficiency is realized; silver-sulfur-based nano particles are added into an organic framework of the poly 3, 4-ethylenedioxythiophene, so that a flocculent structure is filled in a hollow structure framework, the structure is compact, and the electron mobility is improved; secondly, the flexible thermoelectric material of the present invention has high electrical conductivity and seebeck coefficient, thereby improving the power factor of the material and finally enabling the material to show excellent thermoelectric performance.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: the invention provides a flexible thermoelectric material for a semiconductor device, which comprises silver-sulfur-based nano particles and poly-3, 4-ethylenedioxythiophene coated around the silver-sulfur-based nano particles, wherein the chemical formula of the silver-sulfur-based nano particles is Ag x TeS, wherein x=3.9 to 4.1.
Preferably, the silver-sulfur-based nanoparticle has a chemical formula of AgxTeS, wherein x=3.95 to 4.0.
Further, the silver-sulfur-based nano-particles and the poly 3, 4-ethylenedioxythiophene are prepared according to a mass ratio of 2:3.
Further, the preparation process of the silver-sulfur-based nanoparticle comprises the following steps:
step one: weighing Ag, te and S simple substances;
step two: the weighed simple substance in the first step is subjected to melting annealing in a muffle furnace;
step three: and (3) ball milling the annealed product in the step two to obtain the silver-sulfur-based nano particles.
Further, in the first step, the mass calculation formula required by the simple substances Ag, te and S is as follows:
wherein,,
in order to be of a quality, the material is,
for the avogalileo constant,
in the form of a unit volume of the liquid,
is of a diameter such that, in the case of a diameter,
is the thickness.
Further, the melting temperature in the second step is 900-1000 ℃, the melting time is 24-48 hours, the annealing temperature in the second step is 500-600 ℃, the annealing time is 1-2 hours, the ball milling rotating speed in the third step is 200-300 r/min, and the ball milling time is 30-60 minutes.
Further, the purity of the poly 3, 4-ethylenedioxythiophene is 98%.
The invention also provides a preparation method of the flexible thermoelectric material for the semiconductor device, which comprises the following steps:
step one: fully mixing and reacting the silver-sulfur-based nano-particles prepared in the method of claim 3 with poly 3, 4-ethylenedioxythiophene in 20mL isopropanol according to a mass ratio;
step two: putting the product obtained after the reaction in the step one into a drying box, and drying at 70 ℃ for 60 minutes;
step three: putting the product obtained in the step two into a die, and tabletting at room temperature, wherein the thickness is 1-2 mm;
step four: and (3) placing the product obtained in the step (III) into a spark discharge plasma sintering system for sintering, wherein the sintering temperature is 400-500 ℃, and then naturally cooling to room temperature to obtain the flexible thermoelectric material.
The beneficial effects obtained by the method are as follows:
(1) According to the preparation method, the silver-sulfur-based nano particles and the poly (3, 4-ethylenedioxythiophene) coated around the silver-sulfur-based nano particles are prepared, and the poly (3, 4-ethylenedioxythiophene) has delocalized large pi bonds, so that the silver-sulfur-based nano particles have certain conductivity and can be used as an organic polymer semiconductor;
(2) The prepared silver-sulfur-based nano particles have good thermoelectric performance, and heat energy and electric energy can be directly converted with each other, so that the electric conductivity and the heat conductivity achieve synergistic effect, and the effect of improving the thermoelectric conversion efficiency is realized;
(3) Silver-sulfur-based nano particles are added into an organic framework of the poly 3, 4-ethylenedioxythiophene, so that a flocculent structure is filled in a hollow structure framework, the structure is compact, and the electron mobility is improved;
(4) Secondly, the flexible thermoelectric material of the present invention has high electrical conductivity and seebeck coefficient, thereby improving the power factor of the material and finally enabling the material to show excellent thermoelectric performance.
Drawings
Fig. 1 is a scanning electron microscope image of a flexible thermoelectric material for a semiconductor device prepared in example 3 of the present invention.
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention; all other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the examples of the present invention, unless specifically indicated, the raw materials or treatment techniques are all conventional commercially available raw materials or conventional treatment techniques in the art.
Example 1
The invention provides a flexible thermoelectric material for a semiconductor device, which comprises silver-sulfur-based nano particles and poly-3, 4-ethylenedioxythiophene coated around the silver-sulfur-based nano particles, wherein the chemical formula of the silver-sulfur-based nano particles is Ag x TeS, where x=3.95, i.e. Ag 3.95 TeS。
Wherein, silver-sulfur-based nano particles and poly 3, 4-ethylenedioxythiophene are prepared according to a mass ratio of 2:3.
Wherein, the preparation process of the silver-sulfur-based nano-particles comprises the following steps:
step one: weighing Ag, te and S simple substances;
step two: the weighed simple substance is subjected to melting annealing in a muffle furnace;
step three: and (3) ball milling the annealed product to obtain the silver-sulfur-based nano particles.
Wherein, in the first step, the mass calculation formula required by the simple substances Ag, te and S is as follows:
wherein,,
in order to be of a quality, the material is,
for the avogalileo constant,
in the form of a unit volume of the liquid,
is of a diameter such that, in the case of a diameter,
is the thickness.
Wherein, ag weighs 50g, te weighs 11g and S weighs 2g.
Wherein the melting temperature in the second step is 900 ℃, the melting time is 24 hours, the annealing temperature is 500 ℃, the annealing time is 1 hour, the ball milling rotating speed in the third step is 200r/min, and the ball milling time is 30 minutes.
Wherein the purity of the poly 3, 4-ethylenedioxythiophene is 98%.
The invention also provides a preparation method of the flexible thermoelectric material for the semiconductor device, which comprises the following steps:
step one: fully mixing silver-sulfur-based nano particles prepared in claim 3 with poly 3, 4-ethylenedioxythiophene in 20mL isopropanol according to a mass ratio for reaction;
step two: putting the product after the reaction in the step one into a drying box, and drying at 70 ℃ for 60 minutes;
step three: putting the product obtained in the second step into a die, and tabletting at room temperature, wherein the thickness is 1-2 mm;
step four: and (3) placing the product obtained in the step (III) into a spark discharge plasma sintering system for sintering, wherein the sintering temperature is 500 ℃, and then naturally cooling to room temperature to obtain the flexible thermoelectric material.
Example 2
The invention provides a flexible thermoelectric material for a semiconductor device, which comprises silver-sulfur-based nano particles and poly-3, 4-ethylenedioxythiophene coated around the silver-sulfur-based nano particles, wherein the chemical formula of the silver-sulfur-based nano particles is Ag x TeS, where x=3.97, i.e. Ag 3.97 TeS。
Wherein, silver-sulfur-based nano particles and poly 3, 4-ethylenedioxythiophene are prepared according to a mass ratio of 2:3.
Wherein, the preparation process of the silver-sulfur-based nano-particles comprises the following steps:
step one: weighing Ag, te and S simple substances;
step two: the weighed simple substance is subjected to melting annealing in a muffle furnace;
step three: and (3) ball milling the annealed product to obtain the silver-sulfur-based nano particles.
Wherein, in the first step, the mass calculation formula required by the simple substances Ag, te and S is as follows:
wherein,,
in order to be of a quality, the material is,
for the avogalileo constant,
in the form of a unit volume of the liquid,
is of a diameter such that, in the case of a diameter,
is the thickness.
Wherein, ag weighs 50.2g, te weighs 11g, S weighs 1.9g.
Wherein the melting temperature in the second step is 940 ℃, the melting time is 36 hours, the annealing temperature is 530 ℃, the annealing time is 1.4 hours, the ball milling rotating speed in the third step is 240r/min, and the ball milling time is 40 minutes.
Wherein the purity of the poly 3, 4-ethylenedioxythiophene is 98%.
Among them, a method of manufacturing a flexible thermoelectric material for a semiconductor device is referred to example 1.
Example 3
The invention provides a flexible thermoelectric material for a semiconductor device, which comprises silver-sulfur-based nano particles and poly-3, 4-ethylenedioxythiophene coated around the silver-sulfur-based nano particles, wherein the chemical formula of the silver-sulfur-based nano particles is Ag x TeS, where x=3.99, i.e. Ag 3.99 TeS。
Wherein, silver-sulfur-based nano particles and poly 3, 4-ethylenedioxythiophene are prepared according to a mass ratio of 2:3.
Wherein, the preparation process of the silver-sulfur-based nano-particles comprises the following steps:
step one: weighing Ag, te and S simple substances;
step two: the weighed simple substance is subjected to melting annealing in a muffle furnace;
step three: and (3) ball milling the annealed product to obtain the silver-sulfur-based nano particles.
Wherein, in the first step, the mass calculation formula required by the simple substances Ag, te and S is as follows:
wherein,,
in order to be of a quality, the material is,
for the avogalileo constant,
in the form of a unit volume of the liquid,
is of a diameter such that, in the case of a diameter,
is the thickness.
Wherein, ag is weighed 50.3g, te is weighed 10.9g, S is weighed 2g.
Wherein the melting temperature in the second step is 970 ℃, the melting time is 41 hours, the annealing temperature is 560 ℃, the annealing time is 1.7 hours, the ball milling rotating speed in the third step is 270r/min, and the ball milling time is 50 minutes.
Wherein the purity of the poly 3, 4-ethylenedioxythiophene is 98%.
Among them, a method of manufacturing a flexible thermoelectric material for a semiconductor device is referred to example 1.
Example 4
The invention provides a flexible thermoelectric material for a semiconductor device, which comprises silver-sulfur-based nano particles and poly-3, 4-ethylenedioxythiophene coated around the silver-sulfur-based nano particles, wherein the chemical formula of the silver-sulfur-based nano particles is Ag x TeS, where x=4.0, i.e. Ag 4 TeS。
Wherein, silver-sulfur-based nano particles and poly 3, 4-ethylenedioxythiophene are prepared according to a mass ratio of 2:3.
Wherein, the preparation process of the silver-sulfur-based nano-particles comprises the following steps:
step one: weighing Ag, te and S simple substances;
step two: the weighed simple substance is subjected to melting annealing in a muffle furnace;
step three: and (3) ball milling the annealed product to obtain the silver-sulfur-based nano particles.
Wherein, in the first step, the mass calculation formula required by the simple substances Ag, te and S is as follows:
wherein,,
in order to be of a quality, the material is,
for the avogalileo constant,
in the form of a unit volume of the liquid,
is of a diameter such that, in the case of a diameter,
is the thickness.
Wherein, ag weighs 50.3g, te weighs 10.8g and S weighs 2.1g.
Wherein the melting temperature in the second step is 1000 ℃, the melting time is 48 hours, the annealing temperature is 600 ℃, the annealing time is 2 hours, the ball milling rotating speed in the third step is 300r/min, and the ball milling time is 60 minutes.
Wherein the purity of the poly 3, 4-ethylenedioxythiophene is 98%.
Among them, a method of manufacturing a flexible thermoelectric material for a semiconductor device is referred to example 1.
Performance testing
Conductivity and Seebeck coefficient were tested using SBA458, with a sample thickness of 2mm and a sample diameter of 12.7mm measured under a dynamic argon atmosphere of 150 ml/min.
TABLE 1 Properties of Flexible thermoelectric Material for semiconductor devices
As shown in FIG. 1 and Table 1, the preparation method of the flexible thermoelectric material provided by the invention has the advantages that the Seebeck coefficient, the conductivity and the power factor of the flexible thermoelectric material in the embodiment 3 of the invention are obviously higher than those of other embodiments, the Seebeck coefficient reaches 16.4 mu V/K, the conductivity reaches 798.0S/cm, and the power factor reaches 18.3 mu V/mK 2 Therefore, the introduced materials need to be added in a certain amount, and the performance is influenced by too much or too little, so that the comprehensive influence of the flexible thermoelectric material is considered, and the electric conductivity and the thermal conductivity of the flexible thermoelectric material realize synergistic effect, so that the thermoelectric conversion efficiency is improved, and the flexible thermoelectric material has excellent thermoelectric performance.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
The invention and its embodiments have been described above with no limitation, and the invention is illustrated in the figures of the accompanying drawings as one of its embodiments, without limitation in practice. In summary, if one of ordinary skill in the art is informed by this disclosure, experimental methods and embodiments similar to the technical solution are not creatively designed without departing from the gist of the present invention, and all the experimental methods and embodiments are included in the protection scope of the present invention.
Claims (10)
1. A flexible thermoelectric material for a semiconductor device, characterized by: the flexible thermoelectric material comprises silver-sulfur-based nano-particles and poly (3, 4-ethylenedioxythiophene) coated around the silver-sulfur-based nano-particlesThe chemical formula of the silver-sulfur-based nano-particles is Ag x TeS, wherein x=3.9 to 4.1.
2. A flexible thermoelectric material for a semiconductor device as set forth in claim 1, wherein: the chemical formula of the silver-sulfur-based nano-particles is Ag x TeS, wherein x=3.95-4.0.
3. A flexible thermoelectric material for a semiconductor device as set forth in claim 2, wherein: the silver-sulfur-based nano particles and the poly 3, 4-ethylenedioxythiophene are prepared according to a mass ratio of 2:3.
4. A flexible thermoelectric material for semiconductor devices according to claim 3, wherein the preparation process of the silver-sulfur-based nanoparticles comprises the steps of:
step one: weighing Ag, te and S simple substances;
step two: the weighed simple substance in the first step is subjected to melting annealing in a muffle furnace;
step three: and (3) ball milling the annealed product in the step two to obtain the silver-sulfur-based nano particles.
5. A flexible thermoelectric material for a semiconductor device as set forth in claim 4, wherein: in the first step, the mass calculation formula required by the simple substances Ag, te and S is as follows:
wherein the method comprises the steps of
For the quality of->
Is Avgalileo constant, +.>
For unit cell volume, +.>
For diameter, & lt>
Is the thickness.
6. A flexible thermoelectric material for a semiconductor device as set forth in claim 5, wherein: in the second step, the melting temperature is 900-1000 ℃ and the melting time is 24-48 hours.
7. A flexible thermoelectric material for a semiconductor device as set forth in claim 6, wherein: and in the second step, the annealing temperature is 500-600 ℃, and the annealing time is 1-2 hours.
8. A flexible thermoelectric material for a semiconductor device as set forth in claim 7, wherein: the ball milling rotating speed in the third step is 200-300 r/min, and the ball milling time is 30-60 minutes.
9. A flexible thermoelectric material for semiconductor devices according to claim 8, wherein the poly-3, 4-ethylenedioxythiophene has a purity of 98%.
10. The method for manufacturing a flexible thermoelectric material for a semiconductor device according to claim 1, comprising the steps of:
step one: fully mixing and reacting the silver-sulfur-based nano-particles prepared in the method of claim 3 with poly 3, 4-ethylenedioxythiophene in 20mL isopropanol according to a mass ratio;
step two: putting the product obtained after the reaction in the step one into a drying box, and drying at 70 ℃ for 60 minutes;
step three: putting the product obtained in the step two into a die, and tabletting at room temperature, wherein the thickness is 1-2 mm;
step four: and (3) placing the product obtained in the step (III) into a spark discharge plasma sintering system for sintering, wherein the sintering temperature is 400-500 ℃, and then naturally cooling to room temperature to obtain the flexible thermoelectric material.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310039639.XA CN116156988B (en) | 2023-01-12 | 2023-01-12 | Flexible thermoelectric material for semiconductor device and preparation method thereof |
| PCT/CN2023/089102 WO2024148702A1 (en) | 2023-01-12 | 2023-04-19 | Flexible thermoelectric material for semiconductor device and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310039639.XA CN116156988B (en) | 2023-01-12 | 2023-01-12 | Flexible thermoelectric material for semiconductor device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116156988A true CN116156988A (en) | 2023-05-23 |
| CN116156988B CN116156988B (en) | 2023-10-20 |
Family
ID=86359507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310039639.XA Active CN116156988B (en) | 2023-01-12 | 2023-01-12 | Flexible thermoelectric material for semiconductor device and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN116156988B (en) |
| WO (1) | WO2024148702A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150028513A (en) * | 2013-09-06 | 2015-03-16 | 한국과학기술연구원 | Highly flexible thermoelectric material comprising organic-inorganic hybrid composite and thermoelectirc device comprising the same |
| CN106784288A (en) * | 2016-12-30 | 2017-05-31 | 天津工业大学 | A kind of preparation method for strengthening composite thermoelectric material performance |
| WO2020108383A1 (en) * | 2018-11-28 | 2020-06-04 | 中国科学院上海硅酸盐研究所 | Silver-sulfide-based inorganic thermoelectric material, preparation method therefor and use thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101972995B1 (en) * | 2016-07-13 | 2019-08-26 | 광주과학기술원 | Hybrid thermoelectric material and the preparation process thereof |
| KR102230527B1 (en) * | 2019-11-04 | 2021-03-19 | 가천대학교 산학협력단 | Aligned organic-inorganic hybrid thermoelectric materials and method of manufacturing same |
-
2023
- 2023-01-12 CN CN202310039639.XA patent/CN116156988B/en active Active
- 2023-04-19 WO PCT/CN2023/089102 patent/WO2024148702A1/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150028513A (en) * | 2013-09-06 | 2015-03-16 | 한국과학기술연구원 | Highly flexible thermoelectric material comprising organic-inorganic hybrid composite and thermoelectirc device comprising the same |
| CN106784288A (en) * | 2016-12-30 | 2017-05-31 | 天津工业大学 | A kind of preparation method for strengthening composite thermoelectric material performance |
| WO2020108383A1 (en) * | 2018-11-28 | 2020-06-04 | 中国科学院上海硅酸盐研究所 | Silver-sulfide-based inorganic thermoelectric material, preparation method therefor and use thereof |
Non-Patent Citations (3)
| Title |
|---|
| SI YIN TEE, ET AL.: "Thermoelectric Silver-Based Chalcogenides", ADV. SCI., vol. 9, pages 1 - 35 * |
| XIN LIANG, ET AL.: "Ductile inorganic amorphous/crystalline composite Ag4TeS with phonon-glass electron-crystal transport behavior and excellent stability of high thermoelectric performance on plastic deformation", ACTA MATERIALIA, vol. 218, pages 1 - 11 * |
| ZHEN-HUA GE, ET AL.: "Improved thermoelectric properties of PEDOT:PSS polymer bulk prepared using spark plasma sintering", CHEM. COMMUN., vol. 54, no. 19, pages 2429 - 2431 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116156988B (en) | 2023-10-20 |
| WO2024148702A1 (en) | 2024-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11634332B2 (en) | Selenium-doped MXene composite nano-material, and preparation method and use thereof | |
| CN104409702B (en) | A kind of nitrogen-doped graphene wraps up the preparation method of micron silicon composite | |
| CN1909748A (en) | Rare earth electrode slurry of rare earth thick film circuit based on metal plate and its preparation technology | |
| CN111848165B (en) | P-type bismuth telluride thermoelectric material and preparation method thereof | |
| CN111146416B (en) | Nitrogen-doped silicon-based material, preparation method thereof and application thereof in battery | |
| CN107658455A (en) | Conductive polymer-carbon-coated silicon monoxide composite material and preparation method thereof | |
| CN102496704B (en) | Lithium titanate/titanium black anode material and preparation method thereof | |
| CN102280570B (en) | Trace Cu-doped Bi2S3-based thermoelectric material | |
| CN111244414A (en) | Method for preparing silicon-carbon negative electrode material by magnesiothermic reduction | |
| CN107069004A (en) | A kind of preparation method of the lithium ion battery negative material of three-dimensional porous structure | |
| CN110010367A (en) | A kind of two-dimensional metallic organic frame semiconductor material and preparation method and application | |
| CN115260995A (en) | Double-network heat-conducting porous aerogel energy storage material and preparation method and application thereof | |
| CN116156988B (en) | Flexible thermoelectric material for semiconductor device and preparation method thereof | |
| CN111697219B (en) | Silicon-carbon composite material, preparation method thereof, negative electrode and application thereof | |
| CN111430153B (en) | Carbon nano aerogel material for all-solid-state supercapacitor and preparation method and application thereof | |
| CN108832090A (en) | Lithium ion battery SiO2/ AG composite negative pole material and preparation method thereof | |
| CN109286018B (en) | Preparation method of ultrathin two-dimensional carbon sheet | |
| CN110610812B (en) | B, N double-doped carbon aerogel based on methyl cellulose and preparation method and application thereof | |
| CN114420932B (en) | High-performance glass-ceramic electrode material containing variable-valence metal ion oxide, and preparation method and application thereof | |
| CN110706941B (en) | Preparation method of partially-alloyed oxygen-deficient tin oxide supercapacitor positive electrode material | |
| CN110739454B (en) | Negative electrode material and preparation method thereof | |
| CN111662095A (en) | Low-temperature sintering method of garnet-type inorganic solid electrolyte material | |
| CN112908716A (en) | Zinc oxide-graphene composite electrode material with diatomite as carrier and preparation method thereof | |
| CN108862403A (en) | A kind of preparation method and applications of cobalt acid zinc nanometer sheet material | |
| CN107658457A (en) | A kind of molten-salt electrolysis SiO2Gc/C combination electrodes and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |