CN116144429B - Cleaning solution and cleaning method for carbon-containing film - Google Patents

Cleaning solution and cleaning method for carbon-containing film Download PDF

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CN116144429B
CN116144429B CN202211655387.5A CN202211655387A CN116144429B CN 116144429 B CN116144429 B CN 116144429B CN 202211655387 A CN202211655387 A CN 202211655387A CN 116144429 B CN116144429 B CN 116144429B
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carbon
wafer
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silicon
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CN116144429A (en
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尹印
贺兆波
叶瑞
陈小超
周璇
万杨阳
彭浩
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Hubei Xingfu Electronic Materials Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/65—Mixtures of anionic with cationic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
    • C11D1/22—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
    • C11D2111/22—

Abstract

The invention belongs to the field of electronic chemicals, and particularly relates to a cleaning solution containing a carbon film and a cleaning method. The cleaning liquid comprises dichromate, acid, fluoride, surfactant and ultrapure water. The cleaning solution can effectively remove carbon-containing film layers such as carbon film, silicon oxycarbide film and silicon carbonitride film on the surface of the wafer, does not damage the surface of the silicon wafer, and is beneficial to the reutilization of the wafer.

Description

Cleaning solution and cleaning method for carbon-containing film
Technical Field
The invention belongs to the field of electronic chemicals, and particularly relates to a cleaning solution containing a carbon film and a cleaning method.
Background
In the semiconductor manufacturing process, an interlayer insulating film with smaller dielectric constant is widely formed by introducing carbon atoms into a silicon oxide film and a silicon nitride film, on the other hand, a carbon material is widely used as a hard mask in the semiconductor integrated process, a large number of baffle plates with carbon films, silicon oxycarbide films and silicon carbonitride films deposited on surfaces are generated in the process, 6 baffle plates are required to be added to every 10 positive plates in a wafer foundry of a 65nm process, and 15 to 20 baffle plates are required to be added to every 10 positive plates in a process of 28nm or below. These baffles are expected to be recycled by removing various layers of film.
The carbon-containing film is typically removed in several ways. Firstly, the carbon film is removed by sandblasting, but the sandblasting method is easy to produce destructive damage to the wafer surface. And secondly, removing the carbon film by a thermal oxidation method, wherein the method is limited to a pure carbon film, and cannot remove the carbon silicon oxide film and the carbon silicon nitride film. And thirdly, the carbon film is removed by a plasma cleaning method, but the surface roughness of the wafer is high, and the operation efficiency is low. And fourthly, the carbon-containing film layer is removed by a chemical mechanical polishing mode, but the wafer is polished to a certain thickness, so that the recycling frequency of the wafer is reduced.
The most convenient way is to remove the carbon film by soaking in a chemical solution, wherein most of the chemical solution is hydrochloric acid with a certain concentration and a certain amount of nitric acid is used as a catalyst, and the method for removing the carbon film layer has single type. CN111235637a discloses a method for removing an amorphous carbon film by using an ultraviolet irradiation plus potassium dichromate oxidation method, which is also effective only for amorphous carbon films, and is basically unable to remove a carbosilicon oxide film and a carbosilicon nitride film. CN107431014a discloses a cleaning solution using fluoride and surfactant, which can remove silicon oxycarbide films, but it has been verified that the cleaning cannot remove carbon films and silicon carbonitride films. CN111659271a discloses a dissolution system and method of graphite phase carbon nitride, the dissolution system uses halogenated salt, acid, alcohol and water solvent, which can dissolve carbon nitride, but the use condition is harsh and there is the problem of carbon nitride re-precipitation, and it is verified that the silicon oxycarbide film and silicon carbonitride film cannot be removed. CN 113637536a discloses a method for cleaning a semiconductor wafer boat by using a mixed solution of hydrofluoric acid and a strong oxidant, which can effectively remove organic pollutants and inorganic particulate matters such as rainbow marks on the surface of the wafer boat and refractory photoresist, but has an unsatisfactory removal effect on silicon carbonitride films. CN108130226a discloses a cleaning solution and a preparation method thereof, wherein a mixture of concentrated sulfuric acid, nitric acid and potassium dichromate is used for cleaning a light window and a polytetrafluoroethylene clamp to remove surface pollutants, and the cleaning solution is also effective only on an amorphous carbon film, and can not be removed basically on a carbosilicon oxide film and a carbosilicon nitride film. KR20100007461A discloses a cleaning solution and a cleaning method for quartz parts, wherein the cleaning solution is prepared from an acidic oxidant, fluoride, organic acid, ammonium compound and surfactant, and can effectively remove carbon oxide and metal oxide, but the carbon film cannot be cleaned after verification.
Therefore, developing a cleaning solution and a cleaning method for efficiently removing various carbon-containing films without damaging the wafer is a technical problem that needs to be solved by those skilled in the art.
Disclosure of Invention
The invention aims at solving the problem that a carbon-containing film layer is difficult to remove by a chemical soaking method in the existing wafer regeneration process, and provides a cleaning solution formula for a carbon-containing film layer and a using method thereof.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
The cleaning liquid containing carbon film layer can effectively clean and remove carbon film, silicon oxycarbide film and silicon carbonitride film on the surface of wafer, and the main components of the cleaning liquid comprise 1-10wt% of dichromate, 10-60wt% of acid, 1-10wt% of fluoride, 0.1-1wt% of surfactant and the balance of ultrapure water.
The cleaning solution for the carbon-containing film layer in the scheme is characterized in that: the dichromate comprises any one or a combination of at least two of potassium dichromate, sodium dichromate, ammonium dichromate, bis-tetrabutylammonium dichromate and pyridinium dichromate.
The cleaning solution for the carbon-containing film layer in the scheme is characterized in that: the acid comprises any one or a combination of at least two of sulfuric acid, hydrochloric acid and formic acid.
The cleaning solution for the carbon-containing film layer in the scheme is characterized in that: the fluoride is any one of hydrofluoric acid, ammonium fluoride, tetramethyl ammonium fluoride and tetrabutyl ammonium fluoride.
The cleaning solution for the carbon-containing film layer in the scheme is characterized in that: the surfactant is any one of cetyl pyridinium bromide, cetyl trimethylammonium bromide and cetyl trimethylammonium p-toluenesulfonate.
In order to achieve the above object, the cleaning method of the present invention comprises the steps of:
preparing the cleaning liquid according to any one of claims 1 to 6, wherein the cleaning liquid comprises dichromate, acid, fluoride, surfactant and ultrapure water, and the cleaning liquid is introduced into a chemical storage tank of a tank type cleaning machine, and the temperature of the cleaning liquid is controlled to be 40-70 ℃; placing the wafer with the carbon film, the silicon oxycarbide film and the silicon carbonitride film on the surface into a machine cleaning tank, introducing cleaning liquid, cleaning for 10-60 min, performing QDR quick drying after cleaning, and checking the surface state of the wafer.
In the above cleaning method, after the carbon-containing film layer on the surface of the wafer is removed by cleaning, no film layer remains on the surface, and the loss thickness of the wafer is less than 2um, more preferably less than 1um, even more preferably less than 500nm, and most preferably less than 100nm.
The beneficial effects of the invention are that
The cleaning liquid and the cleaning method can remove the carbon film, the silicon oxycarbide film and the silicon carbonitride film on the surface of the processed wafer, basically has no damage to the surface of the wafer, and can well recycle the wafer
Detailed Description
For a better understanding of the present invention, the following examples are set forth to illustrate the invention further, but are not to be construed as limiting the invention.
Comparative example 1
Thickness measurement of carbon-containing film: the thickness of the carbon film is about 1um, and the thickness of the carbon film is confirmed by SEM test; the silicon oxycarbide film and the silicon carbonitride film have a carbon atom content of about 40% and a film thickness of about 1 μm, and the thickness was measured by using an ellipsometer.
Wafer corrosion condition evaluation: the monocrystalline silicon wafer is firstly weighed on a balance with 5 decimal places to prepare record weight, and is washed by a cleaning solution and then is washed, dried and weighed. The thickness loss of the single crystal silicon is calculated by d=m (weight difference)/silicon density, which is calculated by the area of the wafer, and the etching rate of the single crystal silicon wafer is calculated according to the cleaning time.
In comparative example 1, 1Kg of potassium dichromate powder was added to 10L of deionized water and stirred, and then 10L of 98% by mass concentrated sulfuric acid was slowly added and stirred continuously until the potassium dichromate was dissolved, to obtain a red-black potassium dichromate solution. After the temperature of the solution is raised to 60 ℃, respectively putting the wafer coated with the carbon film, the silicon oxycarbide film and the silicon carbonitride film and the monocrystalline silicon wafer into the solution for cleaning for 20min, and washing and drying after the cleaning is finished.
And testing the residual condition of the surface film layer and the damaged thickness of the wafer by the dried wafer, thereby evaluating the cleaning effect. The evaluation index of the cleaning effect of comparative example 1 is shown in table 1, and the cleaning liquid is effective only for removing the carbon film, and neither the silicon oxycarbide film nor the silicon carbonitride film can be removed, and is free from corrosion to the single crystal silicon.
Comparative example 2
Comparative example 2A cleaning solution was prepared using hydrofluoric acid and lauryl dimethyl ethyl ammonium ethyl sulfate (ES-L-9), with an HF concentration of 20%, a surfactant concentration of 1%, and the balance being water. The wafer cleaning steps, parameters and test methods were the same as in comparative example 1. As shown in Table 2, the cleaning effect of comparative example 2 was such that the cleaning liquid could not clean the carbon film, and the etching rate for the silicon oxycarbide film and the silicon carbonitride film was more than 10nm/min, but the etching rate for the single crystal silicon was faster, and the etching rate was about 13nm/min.
Comparative example 3
Comparative example 3 a wafer with a carbon film layer was immersed in a solvent prepared from zinc chloride and water at 80 c for 15min, and after washing and drying, the residual condition of the surface film layer and the wafer damage thickness were tested. The evaluation index of the cleaning effect of comparative example 3 is shown in table 1, and the cleaning liquid has only a slight effect on removal of the carbon film, neither the silicon oxycarbide film nor the silicon carbonitride film, nor the monocrystalline silicon.
Comparative example 4
Comparative example 4 a cleaning solution was prepared using potassium dichromate and hydrofluoric acid, wherein the cleaning solution contained 5% potassium dichromate and 10% hydrofluoric acid. And soaking the wafer with the carbon film layer for 15min under the cleaning condition of 80 ℃, and testing the residual condition of the surface film layer and the damage thickness of the wafer after cleaning and drying. The evaluation index of the cleaning effect of comparative example 4 is shown in table 1, and the cleaning liquid has a certain cleaning effect only on the carbon film and the silicon oxycarbide film, but the removal effect on the silicon carbonitride film is not ideal, and the silicon single crystal is slightly corroded.
Comparative example 5
Comparative example 5 a cleaning solution was prepared using potassium dichromate, sulfuric acid, and nitric acid, wherein the cleaning solution had a potassium dichromate content of 2%, a sulfuric acid content of about 90%, and a nitric acid content of about 3%. And soaking the wafer with the carbon film layer for 15min under the cleaning condition of 80 ℃, and testing the residual condition of the surface film layer and the damage thickness of the wafer after cleaning and drying. The evaluation index of the cleaning effect of comparative example 5 is shown in table 1, and the cleaning liquid is similar to comparative example 1 in that it has an effect of removing only the carbon film, and neither the silicon oxycarbide film nor the silicon carbonitride film can be removed, and it is free from corrosion to single crystal silicon.
Comparative example 6
Comparative example 6 the cleaning solution consisted of 10% methyl ammonium hydroxide, 10% hydrofluoric acid, 20% hydrogen peroxide, 1% acetic acid, and 100ppm of a polymer of ethylene oxide and propylene oxide was added as a nonionic surfactant. And soaking the wafer with the carbon film layer for 15min under the cleaning condition of 80 ℃, and testing the residual condition of the surface film layer and the damage thickness of the wafer after cleaning and drying. The evaluation index of the cleaning effect of comparative example 6 is shown in table 1, and the cleaning liquid has a certain cleaning effect on silicon oxycarbide films and silicon carbonitride films, but is poor in the cleaning effect on carbon films and has corrosion on single crystal silicon, similarly to comparative example 2.
Table 1 comparative example cleaning effect
Example 1
A cleaning solution containing carbon film comprises 5% of potassium dichromate, 50% of sulfuric acid, 8% of hydrofluoric acid, 1% of cetyl pyridinium bromide and 39% of water, and the component contents are shown in table 2.
Preparing cleaning liquid according to the components and the contents listed in the table 2, and introducing the cleaning liquid into a chemical storage tank of a tank type cleaning machine, wherein the temperature of the cleaning liquid is controlled at 60 ℃; the cleaning effect was evaluated by placing the same types of wafers with carbon film, silicon oxycarbide film, silicon carbonitride film and monocrystalline silicon wafer of comparative example 1 in a machine cleaning tank, introducing a cleaning liquid, cleaning for 20min, performing QDR rapid drying after cleaning, and testing the residual condition of the surface film layer and the damaged thickness of the monocrystalline silicon wafer after drying.
Example 1 the cleaning effect is shown in table 3, and the cleaning solution has a cleaning efficiency of about 30nm/min for carbon films, about 42nm/min for silicon oxycarbide films, and about 25nm/min for silicon carbonitride films, and can effectively remove various carbon-containing film layers. The etching efficiency of the carbon-containing film layer is about 1nm/min, and even if the cleaning time is prolonged to 60min, the damage of the cleaning liquid to the monocrystalline silicon is lower than 100nm after the carbon film is removed.
Example 2
Example 2 the cleaning solution component content was the same as in example 1, except that the cleaning temperature was adjusted to 25 ℃, and the other cleaning steps, parameters and test methods were the same as in example 1. The cleaning effect of example 2 is shown in Table 3, and the cleaning liquid has a cleaning efficiency of about 3nm/min for a carbon film, a cleaning efficiency of about 4nm/min for a silicon oxycarbide film, a cleaning efficiency of about 2nm/min for a silicon carbonitride film, and a corrosion efficiency of less than 1nm/min for single crystal silicon. The cleaning solution has low efficiency of removing the carbon-containing film layer at normal temperature.
Example 3
As in example 1, only the potassium dichromate concentration was adjusted from 5% to 3%, and the remaining components were unchanged, and the wafer cleaning steps, parameters and test methods were the same as in example 1. The cleaning effect of example 3 is shown in Table 3, and the cleaning liquid has a cleaning efficiency of about 18nm/min for a carbon film, about 25nm/min for a silicon oxycarbide film, about 15nm/min for a silicon carbonitride film, and about 1nm/min for single crystal silicon. The cleaning solution has higher carbon-containing film removal efficiency and does not corrode monocrystalline silicon.
Example 4
As in example 1, only potassium dichromate was adjusted to ammonium dichromate, and the content of the remaining components was unchanged, which was set as example 4. The wafer cleaning steps, parameters and test methods are the same as in example 1. The cleaning effect of example 4 is shown in Table 3, and the cleaning liquid has a cleaning efficiency of about 24nm/min for a carbon film, a cleaning efficiency of about 33nm/min for a silicon oxycarbide film, a cleaning efficiency of about 20nm/min for a silicon carbonitride film, and a corrosion efficiency of less than 1nm/min for single crystal silicon. Ammonium dichromate has a poorer cleaning effect than potassium dichromate, but the cleaning liquid has higher carbon-containing film layer removal efficiency and does not corrode monocrystalline silicon.
Example 5
As in example 1, only sulfuric acid was adjusted to formic acid, and the content of the remaining components was unchanged, which was set as in example 5. The wafer cleaning steps, parameters and test methods are the same as in example 1. The cleaning effect of example 5 is shown in Table 3, and the cleaning liquid has a cleaning efficiency of about 28nm/min for a carbon film, about 37nm/min for a silicon oxycarbide film, about 21nm/min for a silicon carbonitride film, and a corrosion efficiency of less than 1nm/min for single crystal silicon. The acidification effect of formic acid is equivalent to that of sulfuric acid, and the cleaning solution has high efficiency of removing the carbon-film-containing layer and does not corrode monocrystalline silicon.
Example 6
As in example 5, only potassium dichromate was not added, and the content of the remaining components was unchanged, which was set as example 6. The wafer cleaning steps, parameters and test methods are the same as in example 1. The cleaning effect of example 6 is shown in Table 3, and the cleaning solution has a cleaning efficiency of less than 1nm/min for a carbon film, a cleaning efficiency of about 27nm/min for a silicon oxycarbide film, a cleaning efficiency of about 13nm/min for a silicon carbonitride film, and a corrosion efficiency of less than 1nm/min for single crystal silicon. When dichromate is not added, the cleaning liquid cannot remove the carbon film, and the removal efficiency of silicon oxycarbide and silicon carbonitride is greatly reduced.
Example 7
As in example 5, only formic acid was not added, and the content of the remaining components was unchanged, which was set as example 7. The wafer cleaning steps, parameters and test methods are the same as in example 1. The cleaning effect of example 7 is shown in Table 3, and the cleaning liquid has a cleaning efficiency of 2nm/min for the carbon film, about 31nm/min for the silicon oxycarbide film, about 16nm/min for the silicon carbonitride film, and a corrosion efficiency of less than 1nm/min for the single crystal silicon. When inorganic or organic acid is not added, the cleaning liquid has extremely low carbon film removal efficiency, and the silicon oxycarbide and silicon carbonitride removal efficiency is also reduced more.
Example 8
As in example 1, only sulfuric acid was adjusted to nitric acid, and the content of the remaining components was unchanged, which was set as in example 8. The wafer cleaning steps, parameters and test methods are the same as in example 1. The cleaning effect of example 7 is shown in Table 3, and the cleaning liquid has a cleaning efficiency of 27nm/min for a carbon film, about 39nm/min for a silicon oxycarbide film, about 20nm/min for a silicon carbonitride film, and about 10um/min for single crystal silicon. When nitric acid is added, the efficiency of removing the carbon-containing film layer by the cleaning solution is higher, but the silicon single crystal can be severely corroded.
Example 9
As in example 1, only hydrofluoric acid was adjusted to ammonium fluoride, and example 9 was set. The wafer cleaning steps, parameters and test methods are the same as in example 1. The cleaning effect of example 9 is shown in Table 3, and the cleaning liquid has a cleaning efficiency of 29nm/min for a carbon film, a cleaning efficiency of about 22nm/min for a silicon oxycarbide film, a cleaning efficiency of about 13nm/min for a silicon carbonitride film, and a corrosion efficiency of less than 1nm/min for single crystal silicon. Fluoride adjustment has no influence on the efficiency of cleaning liquid to remove the carbon film, but the efficiency of removing silicon oxycarbide and silicon carbonitride is reduced more.
Example 10
As in example 1, only the hydrofluoric acid content was reduced from 8% to 4%, which was set as example 10. The wafer cleaning steps, parameters and test methods are the same as in example 1. The cleaning effect of example 10 is shown in Table 3, and the cleaning liquid has a cleaning efficiency of 26nm/min for a carbon film, a cleaning efficiency of about 19nm/min for a silicon oxycarbide film, a cleaning efficiency of about 10nm/min for a silicon carbonitride film, and a corrosion efficiency of less than 1nm/min for single crystal silicon. The reduction of the fluoride content has a great influence on the cleaning efficiency of the silicon oxycarbide film and the silicon carbonitride film.
Example 11
As in example 1, only the surfactant was changed from cetylpyridinium bromide to cetyltrimethylammonium p-benzathine sulfonate, which was set as in example 11. The wafer cleaning steps, parameters and test methods are the same as in example 1. The cleaning effect of example 11 is shown in Table 3, and the cleaning liquid has a cleaning efficiency of 28nm/min for a carbon film, about 40nm/min for a silicon oxycarbide film, about 23nm/min for a silicon carbonitride film, and a corrosion efficiency of less than 1nm/min for single crystal silicon. The alkylpyridinium type surfactant is more effective in assisting in removing the carbon-containing film.
Example 12
As in example 1, only the cetyl pyridinium bromide content of the surfactant was reduced to 0.5%, set as in example 12. The wafer cleaning steps, parameters and test methods are the same as in example 1. The cleaning effect of example 12 is shown in Table 3, and the cleaning liquid has a cleaning efficiency of 25nm/min for the carbon film, a cleaning efficiency of about 33nm/min for the silicon oxycarbide film, a cleaning efficiency of about 17nm/min for the silicon carbonitride film, and a corrosion efficiency of less than 1nm/min for the single crystal silicon. The content of the surfactant is reduced, and the cleaning efficiency of the carbon-containing film layer is reduced.
Example 13
The same as in example 1, except that the content of the cleaning liquid component was the same, the carbon atom content of the silicon oxycarbide film and the silicon carbonitride film was reduced from 40% to 10%, and the wafer cleaning step and the test method were the same as in example 1. The cleaning effect of example 13 is shown in Table 3, and the cleaning liquid has a cleaning efficiency of 30nm/min for the carbon film, a cleaning efficiency of more than 50nm/min for the silicon oxycarbide film, a cleaning efficiency of more than 50nm/min for the silicon carbonitride film, and a corrosion efficiency of less than 1nm/min for the single crystal silicon. The lower the carbon atom content of the carbon-containing film, the more the solution is washed.
TABLE 2 Components of the examples
Table 3 cleaning effect of each example
It is apparent that the above examples are only examples made for the sake of clarity and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. And thus obvious variations or modifications to the disclosure are within the scope of the invention.

Claims (5)

1. A cleaning method for removing a carbon-containing film layer on the surface of a wafer is characterized by comprising the following steps: the method comprises the following steps:
Preparing cleaning liquid, and guiding the cleaning liquid into a chemical storage tank of a tank type cleaning machine, wherein the temperature of the cleaning liquid is controlled at 60 ℃; placing a wafer with a carbon film, a silicon oxycarbide film or a silicon carbonitride film on the surface in a machine cleaning tank, introducing cleaning liquid, cleaning for 10-60 min, performing QDR quick drying after cleaning, and checking the surface state of the wafer;
Wherein the cleaning liquid consists of 1-10wt% of dichromate, 10-60wt% of acid, 8-10wt% of fluoride, 0.1-1wt% of surfactant and the balance of ultrapure water; the acid is selected from any one or a combination of at least two of sulfuric acid and formic acid; the fluoride is any one of hydrofluoric acid, tetramethyl ammonium fluoride and tetrabutyl ammonium fluoride; the surfactant is any one of cetyl pyridinium bromide, cetyl trimethylammonium bromide and cetyl trimethylammonium p-toluenesulfonate; the dichromate is any one or a combination of at least two selected from potassium dichromate, sodium dichromate, ammonium dichromate, bis-tetrabutylammonium dichromate and pyridinium dichromate; the carbon-containing film layer is a carbon film, a silicon oxycarbide film with the carbon atom content of 5-50% or a silicon carbonitride film with the carbon atom content of 5-50%.
2. The method according to claim 1, characterized in that: and after the carbon-containing film layer on the surface of the wafer is cleaned and removed, the loss thickness of the wafer is less than 2 mu m.
3. The method according to claim 2, characterized in that: and after the carbon-containing film layer on the surface of the wafer is cleaned and removed, the loss thickness of the wafer is less than 1 mu m.
4. A method according to claim 3, characterized in that: and after the carbon-containing film layer on the surface of the wafer is cleaned and removed, the loss thickness of the wafer is less than 500nm.
5. The method according to claim 4, wherein: and after the carbon-containing film layer on the surface of the wafer is cleaned and removed, the loss thickness of the wafer is less than 100nm.
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CN108585530A (en) * 2018-04-20 2018-09-28 广东红日星实业有限公司 A kind of glass etching liquid and preparation method thereof

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