CN116137312A

CN116137312A - Bridge device, substrate and light-emitting device

Info

Publication number: CN116137312A
Application number: CN202310281275.6A
Authority: CN
Inventors: 柯有谱; 刘会萍; 张妮
Original assignee: Shenzhen Jufei Optoelectronics Co Ltd
Current assignee: Shenzhen Jufei Optoelectronics Co Ltd
Priority date: 2023-01-14
Filing date: 2023-03-14
Publication date: 2023-05-19
Also published as: CN220189688U

Abstract

The invention relates to a bridging device, a substrate and a light-emitting device, wherein the bridging device is arranged between light-emitting chips which need to be cross-connected in the light-emitting device, and replaces a complex circuit structure in the substrate to realize cross connection, so that the structure of the substrate is simplified, the production cost of the light-emitting device is reduced, and the production efficiency is improved; or replace the gold wires staggered among the light emitting chips to realize cross connection, thereby reducing the risk of short circuit and improving the quality of the light emitting device. In addition, the bridge device is used as a device independent of the substrate, can be flexibly deployed on the substrate according to requirements, and particularly in the scheme of preparing the light-emitting device based on the light-emitting chip with the forward-mounted structure, the use of the bridge device is almost not limited by the circuit structure of the substrate, the deployment of the light-emitting chip or the bridge device is not required to be considered in the design of the corresponding substrate, the decoupling of the circuit structure of the substrate and the deployment of the device on the substrate is realized to a great extent, and the preparation flexibility of the light-emitting device is improved.

Description

Bridge device, substrate and light-emitting device

The present application claims priority from chinese patent application No. 2023100973522, entitled "a bridging device" filed on date 14 at month 2023, 01, which is incorporated herein by reference in its entirety.

Technical Field

The present invention relates to the field of electronic technologies, and in particular, to a bridge device, a substrate, and a light emitting device.

Background

With the development of LED (Light-Emitting Diode) technology, light Emitting devices supporting dual-color temperature Light emission and multi-color temperature Light emission are becoming more common, for example, in the lighting field, lamps emit Light with different color temperatures to create different atmospheres, which is popular among consumers. Taking an LED chip including two color temperatures in the light emitting device as an example, if only one of the LED chips having one color temperature is turned on, the light emitting device can realize light emission of the first color temperature or light emission of the second color temperature, and if the LED chips having two color temperatures are turned on at the same time, the light emitting device can realize light emission of the third color temperature, so that the LED chips having different color temperatures in the light emitting device need to be driven independently. Meanwhile, in order to ensure that the light emitting device emits light according to the third color temperature, the LED chips with two color temperatures in the light emitting device are uniformly and alternately distributed, and the uniformity of the light mixing is positively correlated with the uniformity of the staggered distribution of the LED chips with different color temperatures. If the LED chip is in a flip-chip structure, the substrate carrying the LED chip in the light-emitting device is necessarily complex in structure, and a single-layer substrate cannot be used; if the LED chips are in a normal mounting structure, gold wires are staggered among the LED chips, which easily causes a problem of short circuit among the gold wires, especially after COB (Chip On Board) packaging of the LED chips by using packaging glue such as fluorescent glue, the staggered gold wires are pressed together due to the influence of the packaging glue, so that the problem of short circuit occurs.

Therefore, how to simplify the structure of the substrate in the light emitting device based on the flip-chip LED chip and how to reduce the risk of the short circuit of the gold wires in the light emitting device based on the forward-mounted LED chip is a technical problem to be solved.

Disclosure of Invention

In view of the above-mentioned shortcomings of the related art, an object of the present application is to provide a bridge device, which is aimed at solving the problem that the structure of the substrate in the existing light emitting device is complex or short circuit is easy to occur.

The application provides a bridge device comprising: the bridge electrode groups are electrically isolated from each other, each bridge electrode group consists of two bridge electrodes which are electrically connected with each other, and the at least two bridge electrode groups comprise a first bridge electrode group and a second bridge electrode group; a first straight line defined by two bridging electrodes in the first bridging electrode group intersects a projection line of a second straight line defined by two bridging electrodes in the second bridging electrode group on the carrier plate.

The bridge device comprises a first bridge electrode group and a second bridge electrode group, wherein a first straight line passing through two bridge electrodes in the first bridge electrode group is intersected with a projection line passing through two bridge electrodes in the second bridge electrode group on the bearing plate, the two bridge electrodes in the first bridge electrode group are electrically connected with each other, the two bridge electrodes in the second bridge electrode group are also electrically connected with each other, namely, the connection lines of the two bridge electrodes in the first bridge electrode group and the connection circuits of the two bridge electrodes in the second bridge electrode group have no common point, but the two bridge electrodes in the first bridge electrode group can be connected across the two bridge electrodes in the second bridge electrode group or bypass the two bridge electrodes in the second bridge electrode group, so that the bridge device can be arranged between light emitting chips which need to be cross-conducted in the light emitting device, the structure of the substrate is replaced by complex circuit structure to realize cross connection, the structure of the substrate is simplified, the production cost of the light emitting device is reduced, and the production efficiency is improved; or replace the gold wires staggered among the light emitting chips to realize cross connection, thereby reducing the risk of short circuit and improving the quality of the light emitting device. In addition, the bridge device is used as a device independent of the substrate, can be flexibly deployed on the substrate according to requirements, and particularly in the scheme of preparing the light-emitting device based on the light-emitting chip with the forward-mounted structure, the use of the bridge device is almost not limited by the circuit structure of the substrate, the deployment of the light-emitting chip or the bridge device is not required to be considered in the design of the corresponding substrate, the decoupling of the circuit structure of the substrate and the deployment of the device on the substrate is realized to a great extent, and the preparation flexibility of the light-emitting device is improved.

Optionally, the carrier plate includes an insulating layer and a conductive layer carried on the insulating layer, the conductive layer includes a first connection wire and a second connection wire, the first connection wire is configured to connect two bridge electrodes in the first bridge electrode group, and the second connection wire is configured to connect two bridge electrodes in the second bridge electrode group.

The bearing plate of the bridge device is formed with a first connecting wire electrically connected with the two bridge electrodes in the first bridge electrode group and a second connecting wire electrically connected with the two bridge electrodes in the second bridge electrode group through only one conductive layer, so that the thickness of the bridge device is controlled, and the structure of the bridge device is ensured to be simple; and when the bridge device is manufactured, the first connecting wire and the second connecting wire can be formed simultaneously by carrying out patterning treatment on the same conductive layer, so that the manufacturing efficiency of the bridge device is improved.

Optionally, the insulating layer includes an unintentionally doped GaN layer and a growth substrate for growing the unintentionally doped GaN layer, the growth substrate is laminated with the unintentionally doped GaN layer, and the conductive layer and the growth substrate are respectively positioned at two opposite sides of the unintentionally doped GaN layer.

The insulating layer in the bridge device comprises a growth substrate and an unintentionally doped GaN layer grown on the growth substrate, and the bridge device has a wafer structure and can be manufactured by adopting production equipment and a manufacturing process similar to those of the light-emitting chip, so that the production cost of the bridge device is reduced.

Optionally, the carrier plate further includes a passivation layer, the passivation layer at least covers a side of the conductive layer away from the insulating layer, and a side of the bridge electrode away from the carrier plate is exposed to the passivation layer.

In the bridge device, the bearing plate further comprises a passivation layer covering the conductive layer, and the passivation layer can realize electrical isolation between the conductive layer and the outside so as to avoid short circuit risks caused by contact between the conductive layer and the outside circuit structure; meanwhile, the passivation layer can isolate external water and oxygen, so that the electric performance of the conductive layer is prevented from being influenced by water and oxygen erosion, and the reliability of the bridge device is maintained.

Optionally, the carrier plate includes a plurality of insulating layers and at least two conductive layers, and the at least two conductive layers include a first conductive layer and a second conductive layer, which are isolated by at least one insulating layer; two bridging electrodes in the first bridging electrode group are respectively and electrically connected with the first conductive layer through first through holes, and two bridging electrodes in the second bridging electrode group are respectively and electrically connected with the second conductive layer through second through holes.

In the bridge device, the carrier plate includes a first conductive layer and a second conductive layer electrically isolated from each other, and the first conductive layer and the second conductive layer are used to realize the electrical connection of the bridge electrodes in the first bridge electrode group and the second bridge electrode group, and although at least two conductive layers are required to be disposed in the carrier plate of the bridge device, this is equivalent to transferring the complex structure that needs to be implemented on the substrate to the bridge device, so that the substrate can adopt a simple single-layer circuit board structure, and the substrate design is simplified.

Optionally, the plurality of insulating layers include a substrate layer, a first unintentionally doped GaN layer, and a second unintentionally doped GaN layer that are stacked, the first conductive layer is located between the substrate layer and the first unintentionally doped GaN layer, and the second conductive layer is located between the first unintentionally doped GaN layer and the second unintentionally doped GaN layer.

In the bridge device, the insulating layer comprises the substrate layer, the first unintentionally doped GaN layer and the second unintentionally doped GaN layer, and the bridge device has a wafer structure and can be manufactured by adopting production equipment and a manufacturing process similar to those of the light-emitting chip, so that the production cost of the bridge device is reduced.

Optionally, the two bridge electrodes of the first bridge electrode set and the two bridge electrodes of the second bridge electrode set are both located on the same surface of the carrier plate.

In the bridge device, the bridge electrodes of the two bridge electrode groups are all located on the same surface of the carrier plate, and when the bridge device is arranged on the substrate, the surface of the carrier plate provided with the bridge electrodes faces the substrate, so that the bridge device is arranged in a flip-chip manner, and is arranged on the substrate together with the flip-chip structure light-emitting chip; alternatively, the surface of the carrier plate provided with the bridging electrode may be opposite to the substrate, so that the bridging device is disposed in a "front-mounted" manner, and thus disposed on the substrate together with the light emitting chip in a front-mounted structure.

Optionally, the surface of the carrying plate carrying the bridging electrodes has a rectangular outline, and each bridging electrode of the first bridging electrode group and the second bridging electrode group is respectively located at four corners of the rectangular outline.

In the bridge device, the outline of the surface of the bearing plate bearing the bridge electrode is rectangular, and the four bridge electrodes of the first bridge electrode group and the second bridge electrode group are respectively positioned at four corners of the rectangular outline, so that the distance between the bridge electrodes can be increased as much as possible, the bridge electrodes are prevented from being short-circuited when being electrically connected with the substrate or the gold wire, and the quality of the bridge device is improved.

Based on the same inventive concept, the application also provides a substrate, which comprises a substrate, a chip bonding pad group and a bridging bonding pad set, wherein the chip bonding pad group and the bridging bonding pad set are arranged on the substrate; four chip pad sets are disposed around one bridge pad set; the bridge pad set is configured to electrically connect the bridge device of any one of the foregoing, the bridge pad set having four bridge pads in one-to-one correspondence with the bridge electrodes, each chip pad set having chip pads in one-to-one correspondence with the chip electrodes of the light emitting chip; the chip bonding pads are configured to be electrically connected with the corresponding chip electrodes; the bridge pads are configured to be electrically connected to corresponding bridge electrodes.

The substrate is a substrate used by a light emitting chip and a bridge device which are matched with the light emitting chip, a chip bonding pad matched with a chip electrode of the light emitting chip is arranged on the substrate, a bridge bonding pad matched with a bridge electrode in the bridge device is also arranged on the substrate, and meanwhile, the electric connection between part of the chip bonding pad and the bridge bonding pad is realized, so that after the light emitting chip and the bridge device are bonded to the substrate, the electric connection between the light emitting chip and the bridge device can be realized by directly utilizing a circuit structure inside the substrate, gold wires are not required to be arranged, the simplicity of device arrangement in the light emitting device prepared based on the substrate is improved, and the quality of the light emitting device is enhanced.

Optionally, the device further comprises at least two external electrode groups, each external electrode group is composed of two external electrodes, each external electrode corresponds to one chip bonding pad group, and the external electrodes are electrically connected with one chip bonding pad in the corresponding chip bonding pad group.

Based on the same inventive concept, the present application also provides a light emitting device including: a substrate; a light emitting chip; and a bridge device as claimed in any preceding claim; the light emitting chips and the bridging devices are arranged on the substrate, four light emitting chips are arranged around one bridging device, wherein two first bridging electrode groups passing through the bridging device are connected in series, and the other two second bridging electrode groups passing through the bridging device are connected in series.

In the light-emitting device, the bridge device is arranged between the light-emitting chips which need to be cross-conducted to replace a complex circuit structure in the substrate to realize cross connection, so that the structure of the substrate is simplified, the production cost of the light-emitting device is reduced, and the production efficiency is improved; or replace the gold wires staggered among the light emitting chips to realize cross connection, thereby reducing the risk of short circuit and improving the quality of the light emitting device. In addition, the bridge device is used as a device independent of the substrate, can be flexibly deployed on the substrate according to requirements, and particularly in the scheme of preparing the light-emitting device based on the light-emitting chip with the forward-mounted structure, the use of the bridge device is almost not limited by the circuit structure of the substrate, the deployment of the light-emitting chip or the bridge device is not required to be considered in the design of the corresponding substrate, the decoupling of the circuit structure of the substrate and the deployment of the device on the substrate is realized to a great extent, and the preparation flexibility of the light-emitting device is improved.

Optionally, the substrate is any one of the substrates, the light emitting chip is in a flip-chip structure, and the chip electrode of the light emitting chip is bonded with the chip bonding pad group; the bridge electrode of the bridge device faces the substrate and is bonded to the bridge pad on the substrate.

In the light-emitting device, the light-emitting chip and the bridging device are arranged on the substrate in a flip-chip manner, and the electric connection between the light-emitting chip and the bridging device is realized through the circuit structure inside the substrate, so that a gold wire is not required to be additionally arranged; meanwhile, although a circuit exists in the substrate, the circuit structure is simple, even if a single-layer circuit board can be realized, the design of the substrate is simplified, and the production difficulty of the substrate is reduced.

Optionally, the light emitting chip is in a positive mounting structure, the bridging electrode of the bridging device faces away from the substrate, and the chip electrode of the light emitting chip is electrically connected with the bridging electrode through a bonding wire.

In the light-emitting device, the light-emitting chip and the bridging device are arranged on the substrate in a forward mounting manner, the electric connection between the light-emitting chip and the bridging device is realized through the bonding wire, the bonding wire can be a gold wire or a silver wire or other alloy wires, and a corresponding circuit structure is not required to be arranged in the substrate, so that the design of the substrate does not influence the arrangement of the light-emitting chip and the bridging device on the substrate, the decoupling of the device arrangement and the substrate structure is realized, and the substrate only needs to play a role of bearing the light-emitting chip and the bridging device. When the light-emitting device is prepared, the light-emitting chips can be arranged on the substrate according to the requirements, and the bridge device is arranged according to the relative positions among the light-emitting chips and the connection requirements, so that the preparation flexibility of the light-emitting device is improved.

Optionally, a metal reflective layer is disposed on a surface of the substrate facing the light emitting chip and the bridge device.

In the light-emitting device, the metal reflecting layer is arranged on one surface of the substrate facing the light-emitting chip and the bridging device, and the substrate only plays a bearing role on the light-emitting chip and the bridging device and is not electrically connected with the light-emitting chip or the bridging device, so that the reflecting layer can be directly formed by adopting metal on the substrate, and the brightness of the light-emitting device is improved.

Optionally, the light emitting chips connected in series through the first bridging electrode group are a first light emitting chip and a second light emitting chip with a first color temperature, and the light emitting chips connected in series through the second bridging electrode group are a third light emitting chip and a fourth light emitting chip with a second color temperature; the negative electrode of the first light-emitting chip is electrically connected with one bridging electrode in the first bridging electrode group, the positive electrode of the second light-emitting chip is electrically connected with the other bridging electrode in the first bridging electrode group, and at least one of the positive electrode of the first light-emitting chip and the negative electrode of the second light-emitting chip is electrically connected with a light-emitting chip with the same color temperature except the first light-emitting chip and the second light-emitting chip; the negative electrode of the third light-emitting chip is electrically connected with one bridging electrode in the second bridging electrode group, the positive electrode of the fourth light-emitting chip is electrically connected with the other bridging electrode in the second bridging electrode group, and at least one of the negative electrodes of the third light-emitting chip and the fourth light-emitting chip is electrically connected with another light-emitting chip with the same color temperature except the third light-emitting chip and the fourth light-emitting chip.

Optionally, the light emitting chips include at least two light emitting chips of a first color temperature, at least two light emitting chips of a second color temperature, at least two light emitting chips of a third color temperature, and at least two light emitting chips of a fourth color temperature; the bridge device at least comprises a first bridge device and a second bridge device, wherein two light emitting chips with first color temperature are connected in series through a first bridge electrode group of the first bridge device; the two light emitting chips with the second color temperature are connected in series through a second bridging electrode group of the first bridging device; the two light emitting chips with the third color temperature are connected in series through a first bridging electrode group of the second bridging device; the two light emitting chips with the fourth color temperature are connected in series through the second bridging electrode group of the second bridging device.

Drawings

Fig. 1a is a schematic layout diagram of a dual-color temperature LED chip in a light emitting structure using flip chips according to the present application;

FIG. 1b is a schematic cross-sectional view of a light emitting structure using flip chip as described herein;

fig. 1c is a schematic layout diagram of a dual-color temperature LED chip in a light emitting structure using a front-mounted chip according to the present application;

FIG. 2 is a schematic diagram of a bridge device according to an alternative embodiment of the present application;

FIG. 3a is a schematic diagram of a first configuration of a bridge device according to an alternative embodiment of the present application;

FIG. 3b is a schematic diagram of a second configuration of a bridge device according to an alternative embodiment of the present application;

FIG. 3c is a schematic diagram of a third configuration of a bridge device according to an alternative embodiment of the present application;

FIG. 3d is a schematic diagram of a fourth configuration of a bridge device according to an alternative embodiment of the present application;

FIG. 4 is a schematic diagram of a cross-connect of light emitting chips using bridge devices according to an alternative embodiment of the present application;

FIG. 5a is a schematic cross-sectional view of a bridge device according to an alternative embodiment of the present application;

FIG. 5b is a schematic top view of a bridge device provided in an alternative embodiment of the present application;

FIG. 5c is another schematic cross-sectional view of a bridge device provided in an alternative embodiment of the present application;

FIG. 6a is a schematic structural view of a bridge device according to an alternative embodiment of the present application;

FIG. 6b is a schematic diagram of the process of the bridging device of FIG. 6 a;

FIG. 7a is a schematic illustration of another configuration of a bridge device provided in an alternative embodiment of the present application;

FIG. 7b is a schematic diagram of the process of the bridging device of FIG. 7 a;

FIG. 8a is a schematic diagram illustrating a distribution of the first and second vias in the bridging device of FIG. 7 a;

FIG. 8b is a schematic bottom view of the bridging device of FIG. 7 a;

FIG. 9a is a schematic view of a structure of a substrate according to yet another alternative embodiment of the present application;

FIG. 9b is a schematic view of another structure of a substrate provided in yet another alternative embodiment of the present application;

FIG. 10 is a schematic bottom view of a light emitting chip according to yet another alternative embodiment of the present disclosure;

fig. 11 is a schematic structural view of a light emitting device provided in example 1 of still another alternative embodiment of the present application;

fig. 12a is a schematic structural view of a light emitting device provided in example 2 of still another alternative embodiment of the present application;

FIG. 12b is a schematic diagram of a circuit schematic corresponding to the light emitting device in FIG. 12 a;

fig. 13a is a schematic structural view of a light emitting device provided in example 3 of yet another alternative embodiment of the present application;

FIG. 13b is a schematic diagram of a circuit corresponding to the light emitting device of FIG. 13 a;

fig. 14 is a schematic structural view of a light emitting device provided in example 4 of still another alternative embodiment of the present application;

fig. 15 is another structural schematic view of a light emitting device provided in example 4 of still another alternative embodiment of the present application;

Fig. 16 is a schematic structural view of a light emitting device provided in example 5 of still another alternative embodiment of the present application;

fig. 17 is a schematic structural view of a light emitting device provided in example 6 of still another alternative embodiment of the present application.

Reference numerals illustrate:

10-a light emitting structure; 11-LED chips; 11 a-a first color temperature LED chip; 11 b-a second color temperature LED chip; 12-a circuit board; a 20-bridge device; 21-a carrier plate; 211-a substrate layer; 212-an unintentionally doped GaN (gallium nitride) layer; 213-connecting wires; 214-a first conductive layer; 215-a first unintentionally doped GaN layer; 216-a second conductive layer; 217-a second unintentionally doped GaN layer; 218-a first via; 219-second vias; 22-bridging electrode groups; 22 a-a first set of bridging electrodes; 22 b-a second set of bridging electrodes; 220. a, B, C, D-bridging electrodes; 30-a light emitting chip; 30 a-a first color temperature light emitting chip; 30 b-a second color temperature light emitting chip; 40-a substrate; 41-an external positive electrode; 41 a-a first pair of external positive electrodes; 41 b-a second pair of external positive electrodes 41b; 42-an external negative electrode; 42 a-a first pair of external negative electrodes; 42 b-a second pair of external negative electrodes; 43-substrate; 44-chip pad set; 45-bridging pad set; 450. a, b, c, d-bridge pads; 50-a light emitting device; 60-bracket.

Detailed Description

In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Preferred embodiments of the present application are shown in the accompanying drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

Referring to fig. 1a, the LED chips 11 in the light-emitting structure 10 are generally arranged on one side of the circuit board 12 in an array, and if the light-emitting structure 10 includes two color temperature LED chips 11, namely a first color temperature LED chip 11a and a second color temperature LED chip 11b, for uniform light mixing, the common arrangement of the LED chips 11 in the light-emitting structure 10 is as shown in fig. 1 a: the first color temperature LED chips 11a and the second color temperature LED chips 11b are alternately arranged not only in rows but also in columns.

The light emitting structure 10 in fig. 1a can achieve at least two color temperatures of light emission, and in some examples of this embodiment, please refer to fig. 1b, the light emitting structure 10 supports three color temperatures of light emission: for example, the plurality of first color temperature LED chips 11a are connected in series to form a first branch, the plurality of second color temperature LED chips 11b are connected in series to form a second branch, the first branch is individually lighted to realize the first color temperature light emission, the second branch is individually lighted to realize the second color temperature light emission, and meanwhile, the first branch and the second branch are lighted to realize the third color temperature light emission. In order to realize independent control of the first color temperature LED chip 11a and the second color temperature LED chip 11b, in some examples, the LED chips 11 are flip-chip structures, and the LED chips 11 are electrically connected through circuit layers in the circuit board 12, fig. 1b shows a schematic cross-sectional view of the light emitting structure 10 along L-L' in fig. 1a, and it can be seen from fig. 1b that the circuit board 12 must use a multi-layer board, otherwise, independent control of the first color temperature LED chip 11a and the second color temperature LED chip 11b cannot be realized.

In view of the current industrial technical level, the light efficiency of the LED chip 11 with the flip-chip structure is not as good as that of the LED chip 11 with the front-mounted structure, especially in the lighting field, the front-mounted chip is still the main component, but if the LED chip 11 in fig. 1a is replaced with the front-mounted structure, the situation that gold wires are staggered will not be doubtful to those skilled in the art will necessarily occur frequently between the LED chips 11, which increases the risk of short circuit and reduces the production yield of the light-emitting structure 10. In the case of using the front-mounted LED chips 11 in the light-emitting structure 10, in order to reduce the risk of short-circuit and improve the reliability of the light-emitting structure 10, the light mixing effect corresponding to the light-emitting structure 10 has to be sacrificed, and a chip arrangement different from that shown in fig. 1a is adopted, for example, as shown in fig. 1c, the first color temperature LED chips 11a and the second color temperature LED chips 11b in each light-emitting structure 10 are alternately arranged only in units of rows, and are not staggered in rows, that is, the same chip row is composed of LED chips 11 with only one color temperature.

It can be seen that the implementation cost of uniform light mixing in the related art is high, and complicated circuit board structure or low product yield is accompanied by uniform light mixing.

Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.

An alternative embodiment of the present application:

referring to fig. 2, the bridge device 20 includes a carrier 21 and at least two bridge electrode sets 22 disposed on the carrier 21, where each bridge electrode set 22 is electrically isolated from each other, and each bridge electrode set 22 is composed of two bridge electrodes 220 electrically connected to each other, and fig. 2 illustrates an electrical connection relationship between the bridge electrodes 220 in the bridge electrode sets 22 by a thick dashed line, but the trend of the thick dashed line does not limit the arrangement of connecting wires or the arrangement of connecting circuit layers between the bridge electrodes 220. In fig. 2, a first bridging electrode group 22a and a second bridging electrode group 22b are disposed on the carrier plate 21 of the bridging device 20, the first bridging electrode group 22a is composed of two bridging electrodes 220, and the two bridging electrodes 220 are electrically connected to each other; the second bridging electrode group 22b is also constituted by two bridging electrodes 220, the two bridging electrodes 220 being electrically connected to each other. In the present embodiment, "the bridge electrode groups 22 are electrically isolated from each other" means that no electrical connection exists between any two bridge electrode groups 22 in the bridge device 20, for example, the circuits of the first bridge electrode group 22a and the second bridge electrode group 22b are not connected. In this embodiment, a virtual straight line is defined by two bridging electrodes 220 in the first bridging electrode group 22a as a first straight line, and another virtual straight line defined by two bridging electrodes 220 in the second bridging electrode group 22b as a second straight line, where the first straight line intersects with a projection line of the second straight line on the carrier plate, that is, the first straight line passing through two bridging electrodes 220 in the first bridging electrode group 22a and the second straight line passing through two bridging electrodes 220 in the second bridging electrode group 22b intersect with each other.

For convenience of explanation of the solution of the present application, and also for convenience of understanding of the solution by those skilled in the art, the two bridging electrodes 220 in the first bridging electrode group 22a will be denoted by "a" and "B" respectively, and the two bridging electrodes 220 in the second bridging electrode group 22B will be denoted by "C" and "D" respectively. It will be appreciated that the straight line passing through the two bridging electrodes 220 in the bridging electrode group 22 is not the same as the line segment between the two bridging electrodes 220 in the bridging electrode group 22, so that the first straight line passing through the two bridging electrodes 220 in the first bridging electrode group 22a and the second straight line passing through the two bridging electrodes 220 in the second bridging electrode group 22B intersect each other, which does not mean that the line segment between the two bridging electrodes 220 in the first bridging electrode group 22a necessarily intersects the line segment between the two bridging electrodes 220 in the second bridging electrode group 22B, for example, in fig. 3a, the first line segment between the bridging electrode a and the bridging electrode B in the first bridging electrode group 22a does not intersect the second line segment between the bridging electrode C and the bridging electrode D in the second bridging electrode group 22B, but the second line segment intersects the extension line of the first line segment. Of course, in other examples of the present embodiment, the first line segment (i.e. the shortest distance between the bridging electrodes a and B) may also directly intersect the second line segment (i.e. the shortest distance between the bridging electrodes C and D), as shown in fig. 3B, 3C and 3D. In fig. 3a to 3d, the thick solid lines illustrate the connecting wires 213 between the bridging electrodes 220 in the bridging electrode group 22, but it will be understood by those skilled in the art that there are other options for the arrangement of the connecting wires, not limited to the ones shown.

It can be understood that, because the first straight line passing through the two bridge electrodes 220 in the first bridge electrode group 22a and the second straight line passing through the two bridge electrodes 220 in the second bridge electrode group 22b in the bridge device 20 are intersected with each other, and the bridge electrodes 220 in the bridge electrode group 22 are electrically connected, when the light emitting device is manufactured, the requirement of cross electrical connection between the light emitting chips at space positions due to the purposes of improving the uniformity of mixed light and the like can be met by using the bridge device 20 to replace a substrate or an external gold wire, thereby simplifying the structural complexity of the substrate, avoiding the problems of gold wire short circuit and the like, reducing the production cost of the light emitting device, and improving the production efficiency and the production yield.

For example, referring to fig. 4, the bridge device 20 is used to cross-connect the light emitting chips 30 with two color temperatures at a spatial location, and fig. 4 shows a minimum unit in which four light emitting chips 30 are provided in the minimum unit, two of the light emitting chips 30 are first color temperature light emitting chips 30a, the other two are second color temperature light emitting chips 30b, and the four light emitting chips 30 are disposed around the bridge device 20 and the light emitting chips 30 with the same color temperature are disposed at intervals. The positive electrode of one first color temperature light emitting chip 30a is electrically connected with the bridge electrode A in the bridge device 20, the negative electrode of the other first color temperature light emitting chip 30a is electrically connected with the bridge electrode B in the bridge device 20, and the bridge electrode A and the bridge electrode B belong to the first bridge electrode group 22a and are electrically connected with each other, so that the bridge device 20 realizes that the two first color temperature light emitting chips 30a are connected in series; likewise, the positive electrode of one second color temperature light emitting chip 30b is electrically connected to the bridge electrode C in the bridge device 20, and the negative electrode of the other second color temperature light emitting chip 30b is electrically connected to the bridge electrode D in the bridge device 20, and since the bridge electrode C and the bridge electrode D are electrically connected to each other by the second bridge electrode group 22b, the bridge device 20 also realizes that the two second color temperature light emitting chips 30b are connected in series. It can be seen that the bridge device 20 ensures electrical isolation between the light emitting chips 30 of different color temperatures while allowing the light emitting chips 30 of different color temperatures to be cross-connected in spatial locations.

In this embodiment, it is assumed that the first color temperature light emitting chip 30a located at the upper left corner of the bridge device 20 in fig. 4 is a first light emitting chip, the first color temperature light emitting chip 30a located at the lower right corner of the bridge device 20 is a second light emitting chip, the second color temperature light emitting chip 30B located at the upper right corner of the bridge device 20 is a third light emitting chip, the second color temperature light emitting chip 30B located at the lower right corner of the bridge device 20 is a fourth light emitting chip, wherein the negative electrode of the first light emitting chip is electrically connected with one bridge electrode a in the first bridge electrode group 22a, the positive electrode of the second light emitting chip is electrically connected with another bridge electrode B in the first bridge electrode group 22a, at least one of the positive electrode of the first light emitting chip and the negative electrode of the second light emitting chip can be electrically connected with other light emitting chips of the same color temperature (i.e., the first color temperature light emitting chip other than the first light emitting chip and the second light emitting chip), for example, the positive electrode of the fifth light emitting chip can be electrically connected with the negative electrode of the fifth light emitting chip, in some examples, the positive electrode of the fifth light emitting chip can be not be connected with the fifth light emitting chip in series with the fifth light emitting chip, and the sixth light emitting chip can also belong to the fifth color temperature light emitting chip. In the latter case, the positive electrode of the first light emitting chip is electrically connected to a serial branch formed by the fifth light emitting chip and the sixth light emitting chip, in other words, in the latter case, the sixth light emitting chip, the fifth light emitting chip, the first light emitting chip and the second light emitting chip are serially connected in sequence; the negative electrode of the third light emitting chip is electrically connected to one bridging electrode C of the second bridging electrode group 22b, the positive electrode of the fourth light emitting chip is electrically connected to the other bridging electrode D of the second bridging electrode group 22b, at least one of the positive electrode of the third light emitting chip and the negative electrode of the fourth light emitting chip is electrically connected to another light emitting chip of the same color temperature (i.e., a light emitting chip of the second color temperature except for the third light emitting chip and the fourth light emitting chip), for example, assuming that the negative electrode of the third light emitting chip is electrically connected to the positive electrode of the seventh light emitting chip, in some examples, the negative electrode of the seventh light emitting chip may not be connected to another light emitting chip in series, in other examples, the positive electrode of the seventh light emitting chip is also connected to the eighth light emitting chip in series, in the latter example, the series branch formed by the seventh light emitting chip and the eighth light emitting chip is actually connected to the negative electrode of the third light emitting chip, the fourth light emitting chip in turn, and the fourth light emitting chip belong to the second color temperature light emitting chip 30b.

In this embodiment, the light emitting chip may be an LED chip, which includes a Mini-LED (sub-millimeter light emitting diode) chip, a Micro-LED (Micro-scale light emitting diode) chip, and a general LED chip having a size larger than that of the Mini-LED chip. In other examples of the present embodiment, the Light Emitting chip may also be an OLED (Organic Light-Emitting Diode) chip.

In some examples of the present embodiment, two bridge electrodes 220 in the same bridge electrode set 22 may be located on the same surface of the carrier plate 21, for example, please refer to a schematic cross-sectional view of the bridge device 20 shown in fig. 5a, the cross-sectional view corresponds to a cross-section perpendicular to a surface of the carrier plate 21 on which the bridge electrodes 220 are disposed, the bridge electrodes a and B belonging to the same bridge electrode set 22 are located on the same surface of the carrier plate 21, and the bridge electrodes C and D belonging to the same bridge electrode set 22 are also located on the same surface of the carrier plate 21. However, in other examples of the present embodiment, two bridge electrodes 220 in the same bridge electrode group 22 may also be distributed on different surfaces of the carrier plate 21, for example, in fig. 5B, a schematic top view of a bridge device 20 is shown, in which bridge device 20, bridge electrodes a and B in the first bridge electrode group 22a are respectively distributed on two opposite sides of the bridge device 20, and bridge electrodes C and D in the second bridge electrode group 22B are also respectively distributed on two opposite sides of the bridge device 20. In still other examples, two bridging electrodes 220 within a portion of the bridging electrode groups 22 of the bridging device 20 are distributed on the same surface of the carrier plate 21, while two bridging electrodes 220 within other bridging electrode groups 22 are distributed on different surfaces of the carrier plate 21.

In some examples of the present embodiment, although two bridge electrodes 220 belonging to the same bridge electrode group 22 are distributed on the same surface of the carrier plate 21, different bridge electrode groups 22 may be distributed on different surfaces of the carrier plate 21, for example, in some examples of the present embodiment, a first bridge electrode group 22a is distributed on a top surface of the carrier plate 21 (in the present embodiment, the top surface of the carrier plate 21 refers to a surface of the carrier plate 21 facing away from the substrate when the bridge device 20 is disposed on the substrate), and a second bridge electrode group 22b is distributed on a bottom surface of the carrier plate 21 (in the present embodiment, the bottom surface of the carrier plate 21 refers to a surface of the carrier plate 21 facing toward the substrate when the bridge device 20 is disposed on the substrate). Still further examples provide a bridge device 20 in which at least the first bridge electrode set 22a and the second bridge electrode set 22b are disposed on the same surface of the carrier 21, please continue to refer to fig. 5a, and further combine fig. 5c.

In fig. 5a, all the bridge electrodes 220 of the first bridge electrode group 22a and the second bridge electrode group 22b are not only located on the same side surface of the carrier plate 21, but also four bridge electrodes 220 are located on the same plane; however, in fig. 5C, although all the bridge electrodes 220 of the first bridge electrode set 22a and the second bridge electrode set 22B are located on the same side of the carrier 21, the bridge electrodes a and B in the first bridge electrode set 22a and the bridge electrodes C and D in the second bridge electrode set 22B are located on different planes, because the side of the carrier 21 carrying the bridge electrodes 220 is in a step structure, and there is a height difference between different mesas.

In addition, in the foregoing examples, each bridge electrode 220 is located on only one surface of the carrier plate 21, but in other examples of this embodiment, it is not excluded that one bridge electrode 220 is located on different surfaces of the carrier plate 21 at the same time, for example, in some examples, one bridge electrode 220 penetrates through both the top surface and the bottom surface of the carrier plate 21 at the same time, and one end of the bridge electrode 220 is exposed to the top surface of the carrier plate 21 and the other end is exposed to the bottom surface of the carrier plate 21.

It should be understood that, when the light emitting chip 30 with the front-mounted structure is used, the chip electrode thereof faces away from the substrate, so as to facilitate the connection between the chip electrode of the light emitting chip 30 and the bridge electrode 220 on the bridge device 20 by gold wires, and when the bridge device 20 used with the light emitting chip 30 with the front-mounted structure is arranged on the substrate, the bridge electrode 220 also faces away from the substrate; similarly, the bridge device 20 used with the flip-chip light emitting chip 30 has its bridge electrode 220 facing the substrate when disposed on the substrate. Taking the example that all the bridge electrodes 220 of the first bridge electrode group 22a and the second bridge electrode group 22b in the bridge device 20 are located on the same surface of the carrier 21, assuming that the carrier 21 has a first surface and a second surface opposite to each other, and that the four bridge electrodes 220 are located on the first surface of the carrier 21, if the bridge device 20 is used with a flip chip, the first surface should be oriented towards the substrate when the bridge device 20 is disposed on the substrate; if the bridge device 20 is intended for use with a front-mounted chip, the bridge device 20 should have a first surface facing away from the substrate when placed on the substrate. In some examples of this embodiment, the bridge device 20 is similar to the light emitting chip 30, with the distinction of "front-loading" and "flip-loading".

It will be appreciated that the carrier plate 21, in addition to functioning as a carrier for the bridging electrodes 220, also needs to make electrical connection between the bridging electrodes 220 within the bridging electrode group 22, so that both conductive and insulating materials are included in the carrier plate 21. In some examples of the present embodiment, the carrier 21 has a plurality of insulating layers and a plurality of patterned conductive layers, the conductive layers form a conductive structure electrically connected to the bridging electrodes 220 in the bridging electrode group 22, and the insulating layers serve to carry the conductive layers on one hand, and also serve to electrically isolate the conductive layers from each other and from the outside. In some examples of the present embodiment, only one of the conductive layers in the carrier plate 21 may be patterned by etching or the like to form a connection wire connecting the bridge electrodes 220; in still other examples, the carrier 21 includes at least two conductive layers, which are separated by an insulating layer, and different conductive layers are used to electrically connect the bridge electrodes 220 in different bridge electrode groups 22, and the bridge electrodes 220 may be electrically connected to corresponding conductive layers by vias.

In some examples of the present embodiment, the conductive layer on the carrier plate 21 may be formed of one or several metals having good conductive properties, for example, at least one of several metals such as copper, gold, silver, platinum, etc.; in still other examples, the conductive layer may also be formed of a non-metallic material with good electrical conductivity, including, but not limited to, at least one of graphite, graphene, CNT (carbon nanotube material), and the like. It will be appreciated that the bridge electrode 220 is generally made of a metal material, so that in some examples, the material of the bridge electrode 220 is the same as the material of the conductive layer in the carrier 21. In some examples of the present embodiment, the bridge electrode 220 may be an elemental metal, for example, the bridge electrode 220 is a gold electrode, which is excellent in conductivity; in other examples, the bridge electrode 220 may be a metal composite layer structure including, for example, at least two of a gold layer, a platinum layer, a chromium layer, a silver layer, an aluminum layer, and the like; in still other examples, the bridge electrode 220 may be an alloy material, including, but not limited to, gold copper alloy or silver aluminum alloy, for example. In other embodiments, the bridge electrode 220 may be a metal compound electrode, such as at least one of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), and the like. The present embodiment does not exclude the case where a non-metallic conductive material is included in the bridging electrode 220, such as the aforementioned graphite material, graphene material, CNT material. In some examples of the present embodiment, at least one insulating layer on the carrier plate 21 may be an insulating resin layer, and in still other examples, at least one insulating layer on the carrier plate 21 may be made of Al ₂ O ₃ (aluminum oxide) layer, siO ₂ (silicon dioxide) layer, alON (aluminum oxynitride) layer, alF ₃ At least one of the (aluminum fluoride) layers.

From the foregoing description, it will be appreciated by those skilled in the art that the carrier plate 21 may be constructed similarly to a PCB (Printed Circuit Board, printed substrate). In other examples of the present embodiment, the bridge device 20 may be a wafer structure, and in these examples, the "bridge device" may also be referred to as a "bridge wafer", in which the carrier 21 includes several materials forming the light emitting chips 30. Taking a light emitting chip as a common GaN-based LED chip as an example here, an unintentionally doped GaN layer may be included in the carrier plate 21 as an insulating layer.

In some examples of the present embodiment, the carrier plate 21 of the bridge device 20 further includes a substrate layer as the LED chip, and in this case, the growth substrate of the light emitting chip 30 is typically a sapphire substrate, and the epitaxial layer of the light emitting chip 30 is formed by epitaxial growth on the growth substrate, and correspondingly, the bridge device 20 may also include a growth substrate of an unintentionally doped GaN layer, such as a sapphire substrate, formed by epitaxial growth on the sapphire substrate. Since the sapphire substrate also has good insulating properties, it may be used as an insulating layer in the carrier plate 21, in this example, an unintentionally doped GaN layer together with the sapphire substrate may be used as one insulating layer in the carrier plate 21. In other examples of the present embodiment, the unintentionally doped GaN layer may not be disposed on an insulating substrate such as a sapphire substrate, but the insulating substrate may be directly used as an insulating layer alone, which is needless to say, the present embodiment does not limit that the substrate layer in the light emitting chip 30 or the bridge device 20 may be only made of sapphire, for example, in other examples of the present embodiment, the substrate layer may be a SiC (silicon carbide) substrate or a Si (silicon) substrate.

It will be appreciated that, because the structure of the bridge wafer is similar to that of the light emitting chip 30, at least part of the process for preparing the bridge wafer may be implemented by using part of the process for preparing the light emitting chip 30, and the bridge wafer and the light emitting chip 30 may share at least part of the preparation equipment; similarly, the bridge wafer and the light emitting chip 30 may be disposed on the substrate of the light emitting device by using the same die bonding apparatus, which can reduce the production cost of the bridge wafer.

There is of course also a distinction between the bridging wafer and the light emitting chip 30, e.g. there is a large difference in the dimensions of the two: typically, in order to minimize the influence of the bridge device 20 on the arrangement pitch of the light emitting chips 30 in the light emitting device and reduce the influence of the bridge device 20 on the light mixing effect of the light emitting device, the size of the bridge device 20 is generally smaller than that of the light emitting chips 30, so even if the bridge device 20 has a wafer structure, there may be a difference between the specifications of the die bonding head used by the die bonder when the light emitting chips 30 are arranged and the die bonding head used by the die bonder when the bridge device 20 is arranged.

In some examples of the present embodiment, the outline of the carrier plate 21 in the bridge device 20 in a top view is substantially rectangular (or the vertical projection of the carrier plate 21 along a projection line perpendicular to the bottom surface (or the top surface) thereof is substantially rectangular), in some examples, the bridge electrodes a and B in the first bridge electrode group 22a are diagonally distributed in two vertex regions of the rectangular outline, and the bridge electrodes C and D in the second bridge electrode group 22B are diagonally distributed in the other two vertex regions of the rectangular outline. However, in other examples of the present embodiment, part of the bridging electrodes 220 may not be distributed in the top corner regions of the rectangular outline, for example, the corresponding bridging electrodes a are located in the middle region of the rectangular outline in fig. 3 a. In some examples of this embodiment, the rectangular profile may have a length dimension in the range of 5 to 15 mils, such as 5 mils, 7 mils, 13 mils, 15 mils, etc., and the rectangular profile may have a width dimension in the range of 5 to 15 mils, such as 5 mils, 8 mils, 11 mils, 14 mils, etc. In some examples, the bridge device 20 may have a thickness dimension of 120-200 um, such as 150um in one example, 185um in another example, and in other examples, 120um, 134um, 167um, 188um, 196um, 200um, etc. in some examples, the bridge device 20 may have a thickness of 120um, 134um, 167um, 188um, 196um, or 200 um. In addition, the size of the electrode of the bridging electrode 220 in the bridging device 20 is generally 50-80 um, and the bridging electrode 220 with the size facilitates gold wire bonding, which is beneficial to improving the preparation efficiency of downstream products such as light emitting devices, for example, the electrode size of the bridging electrode 220 takes the values of 50um, 66um or 75um, 80um, etc.

It will be appreciated by those skilled in the art that in other examples of the present embodiment, the dimensions of the bridge device 20 may take other values, and even in some examples the general outline of the carrier plate 21 of the bridge device 20 in a top view is also other than rectangular, such as circular, parallelogram, regular hexagon or octagon.

The bridge device 20 provided in this embodiment may replace a complex circuit structure in a substrate or a cross gold wire between the light emitting chips 30 to realize cross connection of the light emitting chips 30 at a spatial position, thereby simplifying the structure of the substrate, reducing the production cost of the light emitting device, improving the production efficiency, or reducing the risk of short circuit, and improving the quality of the light emitting device.

Another alternative embodiment of the present application:

in order to better understand the structure and advantages of the foregoing bridge device 20, the present embodiment will be further described with reference to the foregoing embodiments, and the bridge device 20 with a wafer structure is taken as an example, and please further refer to fig. 6a to 8b based on the foregoing drawings:

example 1:

referring to fig. 6a, the carrier plate 21 in the bridge device 20 includes a substrate layer 211, an unintentionally doped GaN layer 212, and a connection wire 213, wherein the substrate layer 211 and the unintentionally doped GaN layer 212 are stacked along a direction perpendicular to a top surface or a bottom surface of the carrier plate 21, the connection wire 213 is disposed on a side of the unintentionally doped GaN layer 212 away from the substrate layer 211, the connection wire 213 is formed by a patterned conductive layer and is connected between two bridge electrodes 220 of the same bridge electrode set 22, and in this embodiment, the connection wire 213 includes a first connection wire electrically connected to two bridge electrodes 220 of the first bridge electrode set 22a, and a second connection wire electrically connected to two bridge electrodes 220 of the second bridge electrode set 22 b. In the process of fabricating the bridge device 20, the unintentionally doped GaN layer 212 may be deposited on the substrate layer 211, then a conductive layer may be formed on the unintentionally doped GaN layer 212 through a process including, but not limited to, evaporation, etc., and then the conductive layer may be patterned to form the connection wire 213. In some examples of the present embodiment, the connection wire 213 and the bridge electrode 220 are formed of the same conductive metal, and both may be formed by patterning the same conductive metal. It should be noted that in fig. 6a, the positional relationship of the connection wires 213 on the unintentionally doped GaN layer 212 is only illustrated, and it is not shown that the connection wires 213 will connect different bridging electrode groups 22. Fig. 3a to 3d show schematic views of the arrangement of the connecting lines 213 in the first bridge electrode group 22a and the second bridge electrode group 22b, in which case the vertical projections of the connecting lines 213 corresponding to the first bridge electrode group 22a and the connecting lines 213 corresponding to the second bridge electrode group 22b do not intersect, since they lie on the same plane. However, it will be understood by those skilled in the art that the arrangement of the connecting wires 213 may be different from the arrangement of the connecting wires 213 described with reference to fig. 3a to 3d, for example, the main body of the connecting wires 213 may be arranged differently, or the connecting wires 213 may be formed of a plurality of circular arc segments and may be waved.

In some examples of this embodiment, the connection wires 213 may be exposed, and in other examples, the connection wires 213 may also be covered with a passivation layer including, but not limited to, al ₂ O ₃ Material and SiO ₂ At least one of the materials, in some examples of this embodiment, the passivation layer comprises Al directly bonded to the bond wire 213 ₂ O ₃ A layer of Al ₂ O ₃ The layer can be formed by ALD (atomic layer deposition) process, has compact property, and is formed by Al ₂ O ₃ The layer is also covered with a layer of SiO ₂ A layer. It will be appreciated that the passivation layer is actually an insulating layer, so that in other examples of the present embodiment, the material covering the connecting wire 213 may be replaced by other insulating materials, such as insulating resin, etc. In some examples of this embodiment, the insulating layer covering the connection wire 213 may cover most of the area on the unintentionally doped GaN layer 212, exposing only the bridging electrode 220; in still other examples, the insulating layer covering the connection wire 213 may cover only the connection wire 213, exposing other areas, in other words, the insulating layer covering the connection wire 213 is also "wire" like the connection wire 213.

The process flow of the bridge device 20 of fig. 6a is described below with reference to the schematic process diagram of fig. 6 b: first, a substrate layer 211 is provided, and as shown in fig. 6b (a), the substrate layer 211 may be selected from a sapphire substrate, a GaN substrate, a Si substrate, and the like. Next, the substrate layer 211 is placed in a reaction chamber, and then an unintentionally doped GaN layer 212 is grown on the substrate layer 211 using any one of processes including, but not limited to, MOCVD (Metal-organic Chemical Vapor Deposition, metal organic chemical vapor deposition), MBE (Molecular beam epitaxy ), etc., please refer to (b) of fig. 6 b. Subsequently, an electrically conductive layer, typically a metal layer, may be formed on the unintentionally doped GaN layer 212 using any one of evaporation, PVD (Physical Vapor Deposition ), CVD (Chemical Vapor Deposition, chemical vapor deposition), ALD, etc., as in (c) of fig. 6b, e.g., the electrically conductive layer may include at least one of the several types of layers Cu, al, au, ag, etc.; or the conductive layer may include a metal compound or a nonmetallic material having good conductivity. Next, the conductive layer is patterned to form a connection wire 213 including a first connection wire and a second connection wire, and a first bridging electrode group 22a and a second bridging electrode group 22b, wherein the first connection wire is connected between two bridging electrodes 220 of the first bridging electrode group 22a, and the second connection wire is connected between two bridging electrodes 220 of the second bridging electrode group 22b, as shown in (d) in fig. 6 b. In some examples of this embodiment, the bridge device 20 is prepared after patterning the conductive layer, but in other examples, a passivation layer is further disposed after patterning the conductive layer, and the passivation layer is disposed on a side of the unintentionally doped GaN layer 212 away from the substrate layer 211, which overlies the connection wires 213. In some examples of the present embodiment, the passivation layer may be in a line shape, extending as the connection wire 213 extends; in other examples, the passivation layer may be layered, which covers, in addition to the connection wire 213, an area of the unintentionally doped GaN layer 212 exposed to the connection wire 213. It will be appreciated, however, that the side of the bridging electrode 220 remote from the unintentionally doped GaN layer 212 should be exposed to the passivation layer due to the passivation layer insulation.

Example 2:

referring to fig. 7a, the carrier plate 21 in the bridge device 20 includes a substrate layer 211, a first conductive layer 214, a first unintentionally doped GaN layer 215, a second conductive layer 216, and a second unintentionally doped GaN layer 217, which are stacked in order. In this embodiment, the first conductive layer 214 and the second conductive layer 216 are generally patterned, the first conductive layer 214 is electrically connected to two bridge electrodes 220 (i.e. the bridge electrode a and the bridge electrode B) in the first bridge electrode set 22a through two first vias 218, the first vias 218 are formed by disposing conductive materials in blind holes, and openings of the blind holes are located on the surface of the carrier 21 and penetrate through the second unintentionally doped GaN layer 217 and the first unintentionally doped GaN layer 215, so that the first conductive layer 214 is electrically connected to the bridge electrodes a and B. The second conductive layer 216 is electrically connected to the two bridge electrodes 220 (i.e. the bridge electrode C and the bridge electrode D) in the second bridge electrode set 22b through two second vias 219, the second vias 219 are also formed by disposing conductive materials in blind holes, and the openings of the blind holes forming the second vias 219 are also located on the surface of the carrier 21, and the blind holes only need to penetrate through the second unintentionally doped GaN layer 217, so that the second conductive layer 216 is electrically connected to the bridge electrode C and the bridge electrode D. It will be appreciated by those skilled in the art that in such a bridge device 20 shown in fig. 7a, the number of conductive layers in the carrier plate 21 is actually related to the number of bridging electrode groups 22 in the bridge device 20, and although in this example only two conductive layers are provided, in other examples, if there are more bridging electrode groups 22 in the bridge device 20, there are also more conductive layers provided in the carrier plate 21, the conductive layers being in one-to-one correspondence with the bridging electrode groups 22, and the conductive layers being electrically isolated from each other by insulating layers, such as unintentionally doped GaN layers.

It should be appreciated that the first unintentionally doped GaN layer 215 in the bridge device 20 of fig. 7a requires electrical isolation of the first conductive layer 214 from the second conductive layer 215, so that the first unintentionally doped GaN layer 215 is necessary, while the second unintentionally doped GaN layer 217 is provided for electrical isolation of the second conductive layer 215 from the outside, and in some examples of the present embodiment, the second unintentionally doped GaN layer 217 may be omitted, except that after omitting the second unintentionally doped GaN layer 217, a short circuit is liable to occur, so that the bridge device 20 provided with the second unintentionally doped GaN layer 217 has a higher electrical reliability and a better quality than the bridge device 20 not provided with the second unintentionally doped GaN layer 217.

In fig. 8a, the distribution of the positions of the first via hole 218 and the second via hole 219 when the bridge device 20 is seen from the side where the substrate layer 211 is located is illustrated by dotted circular holes. It will be appreciated that since the substrate layer 211 in the bridge device 20 is typically a sapphire substrate, which is transparent in texture, the first via 218 in the bridge device 20 is visible when the bridge device 20 is viewed from the side of the substrate layer 211 if the first via 218 penetrates the first conductive layer 214. Moreover, since the unintentionally doped GaN material is transparent, the second via 219 in the bridge device 20 can also be seen when the bridge device 20 is viewed from the side of the substrate layer 211, if the position of the second via 219 is not blocked by the first conductive layer 218 in a top view. A schematic view of the bridge device 20 looking up from the side where the bridge electrode 220 is located is shown in fig. 8b, in which the second unintentionally doped GaN layer 217 and the exposed bridge electrode 220 can be seen. It will be appreciated that although the bridging electrode 220 is rectangular in outline in fig. 8b, in other examples of this embodiment, the bridging electrode 220 may have other shapes, such as regular or irregular shapes such as parallelograms, circles, trapezoids, triangles, etc. in the bottom view of the bridging device 20. Although the first via 218 and the second via 219 in fig. 8a have circular profiles, in other examples of the present embodiment, the circular profiles may be replaced by other regular geometric patterns or irregular patterns.

In some embodiments, the bridge device 20 provided in the foregoing example 1 is generally used with a light emitting chip of a front-mounted structure, and the bridge device 20 provided in example 2 is used with a light emitting chip of a front-mounted structure. However, it should be understood that, in other examples of the present embodiment, the bridge device 20 used with the light emitting chip having the front-loading structure may also have a structure similar to that of fig. 7a, and conversely, the bridge device 20 used with the light emitting chip having the flip-chip structure may also have a structure similar to that of fig. 6, and especially after the connecting wire 213 of the bridge device 20 provided in the foregoing example 1 is covered with the passivation layer, the problem of short circuit or the like is well avoided even if the bridge device 20 is flip-chip used.

It should be understood that, in general, the two bridge electrodes 220 in one bridge electrode group 22 may be electrically connected only by a conductive structure formed by one conductive layer, but this embodiment does not exclude the case that the two bridge electrodes 220 in one bridge electrode group 22 are electrically connected by a conductive structure formed by at least two conductive layers. In addition, as can be seen from the foregoing examples 1 and 2, the conductive structures corresponding to the different bridging electrode groups 22 may be formed by the same conductive layer in the carrier plate 21 (please refer to the foregoing example 1), or may be formed by different conductive layers in the carrier plate 21 (please refer to the foregoing example 2), and if the conductive structures corresponding to the two bridging electrode groups 22 are formed by the same conductive layer, the vertical projections of the conductive structures corresponding to the two bridging electrode groups 22 on the bottom surface of the carrier plate 21 will not intersect or overlap; however, if the conductive structures corresponding to the two bridge electrode groups 22 are formed by different conductive layers, the vertical projection of the conductive structures corresponding to the two bridge electrode groups 22 on the bottom surface of the carrier plate 21 may or may not have intersection or overlap.

The foregoing example is mainly described by taking two bridge electrode groups 22 disposed in the bridge device 20 as an example, but if a plurality of bridge electrode groups 22, for example, four bridge electrode groups 22 are disposed on one bridge device 20, the corresponding conductive structures of the bridge electrode groups 22 may all be formed by the same conductive layer, as in the foregoing example 1; it is also possible that the conductive structure of each bridging electrode group 22 is formed by a single conductive layer, as in the foregoing example 2; or the corresponding conductive structures of the bridge electrode groups 22 may be formed by the same conductive layer, for example, two corresponding conductive structures in the four bridge electrode groups 22 are formed by one conductive layer in the carrier plate 21, and the other two corresponding conductive structures are formed by the other conductive layer in the carrier plate 21; or two corresponding conductive structures in the four bridging electrode groups 22 are formed by one conductive layer in the carrier plate 21, and the other two bridging electrode groups 22 respectively correspond to one independent conductive layer; alternatively, three corresponding conductive structures of the four bridging electrode groups 22 are formed by one conductive layer in the carrier plate 21, and the remaining one corresponding conductive structure is formed by one conductive layer in the carrier plate 21.

Therefore, the arrangement of the conductive structures in the carrier plate 21 in this embodiment can be flexibly selected according to practical situations, so long as the electrical isolation between the conductive structures corresponding to the different bridging electrode groups 22 is ensured, and other limitations are not required in this embodiment.

The process flow of the bridging device 20 of fig. 7a is described below in connection with fig. 7 b: first, a substrate layer 211 is provided, as shown in fig. 7b (a), and for the material of the substrate layer 211, please refer to the foregoing description, which will not be repeated here. Next, as shown in (b) of fig. 7b, a first conductive layer 214 is formed on the substrate layer 211 by a process including, but not limited to, evaporation. In some examples of the present embodiment, after the first conductive layer 214 is formed, the first conductive layer 214 may be patterned to be in a "line" shape. However, in other examples, the first conductive layer 214 may not be necessarily patterned. In (c) of fig. 7b, a first unintentionally doped GaN layer 215 may be formed on the first conductive layer 214 by evaporation, PVD, CVD, MOCVD, MBE, or the like. In fig. 7b (d), a second conductive layer 216 is formed on the first unintentionally doped GaN layer 215. Subsequently, a second unintentionally doped GaN layer 217 is formed on the second conductive layer 216, as shown in (e) of fig. 7 b. To this end, the carrier plate 21 is basically formed. Then, the carrier plate 21 may be etched to form two sets of blind holes, each set of blind holes including two blind holes. Wherein, a set of blind holes sequentially penetrate through the second unintentionally doped GaN layer 217, the second conductive layer 216, and the first unintentionally doped GaN layer 215, so that the first conductive layer 214 is exposed from the hole bottom; another set of blind vias extend through the second unintentionally doped GaN layer 217 such that the second conductive layer 216 is exposed from the bottom of the vias, as shown in (f) of fig. 7 b. In the present embodiment, the inner side walls of the blind holes are insulated, and the arrangement position of the blind holes on the carrier plate 21 substantially determines the arrangement position of the bridge electrode 220 on the carrier plate 21. Next, a conductive material, such as a metal material, is disposed on the carrier 21 by evaporation, and the metal material fills the blind holes, so that the first set of blind holes forms a first via 218, and the second set of blind holes forms a second via 219. While the conductive material will also adhere to the side of the second unintentionally doped GaN layer 217 remote from the second conductive layer 216, as shown in (g) of fig. 7 b. Finally, the second unintentionally doped GaN layer 217 is patterned on the side of the second conductive layer 216 away from the second conductive layer to form the bridge electrode 220, please refer to fig. 7b (h).

Yet another alternative embodiment of the present application:

the application of the bridge device 20 in the light emitting device 50 will be described with reference to fig. 9a to 17:

the light emitting device 50 includes a substrate 40, a light emitting chip 30, and a bridge device 20. In the present embodiment, the light emitting device 50 is at least a bi-color temperature device, which may also support more color temperatures, such as three color temperatures, five color temperatures, seven color temperatures, or the like, for example, in some examples. The different color temperatures supported by the light emitting device 50 need to be realized individually or collectively by the light emitting chips 30 of different color temperatures therein, and in some examples of the present embodiment, the light emitting chips 30 of each color temperature in the light emitting device 50 may be driven independently; in other examples, the light emitting device 50 includes n color temperature light emitting chips 30 therein, wherein m kinds of light emitting chips may be independently driven, and n-m kinds of light emitting chips may be driven together as a whole. The following description will be given taking an example in which the light emitting chips 30 of each color temperature can be independently driven:

it will be appreciated that if the lighting control of the light emitting chips 30 of each color temperature is independent, at least one external electrode group is provided on the substrate 40 for the light emitting chips 30 of each color temperature, each external electrode group is composed of one external positive electrode and one external negative electrode, which are electrically isolated from each other, and both ends of the series branch formed by the light emitting chips 30 of the same color temperature are electrically connected to the external positive electrode and the external negative electrode of the pair of external electrode groups, respectively. In some examples, for the light emitting chips 30 with one color temperature, two or more external electrode groups may be further disposed on the substrate 40, for example, the light emitting chips 30 with a certain color temperature in the light emitting device 50 form two serial branches, each corresponding to one external electrode group. In some examples, each external electrode group on the substrate 40 has its own independent external positive electrode and external negative electrode, and is not shared with other external electrode groups, but in other examples there may be cases where at least some of the external electrode groups share a certain polarity of electrode, e.g., in one example, all external electrode groups on the substrate 40 share the same external negative electrode, but the external positive electrodes of each external electrode group are independent of each other.

It will be appreciated that the substrate 40 carrying the front-mounted chip is structurally different from the substrate 40 carrying the flip-chip: if the light emitting chip 30 used in the light emitting device 50 has a positive mounting structure, the substrate 40 does not need to be provided with a chip pad to be engaged with the chip electrode of the light emitting chip 30, or a bridge pad to be engaged with the corresponding bridge device 20. However, if the light emitting chip 30 used in the light emitting device 50 is of a flip-chip structure, a chip pad to be mated with a chip electrode of the light emitting chip 30 and a bridge pad to be mated with the bridge device 20 need to be provided on the substrate 40. Please refer to fig. 9a, which illustrates a substrate 40 for use with a flip-chip light emitting chip 30:

the substrate 40 has a base material 43, a chip pad set 44, a bridge pad set 45, and an external electrode set disposed on the base material 43.

In fig. 9a, two external electrode groups are provided on the substrate 40, wherein the external positive electrode 41 includes a first pair of external positive electrodes 41a and a second pair of external positive electrodes 41b, the external negative electrode 42 includes a first pair of external negative electrodes 42a and a second pair of external negative electrodes 42b, the first pair of external positive electrodes 41a and the first pair of external negative electrodes 42a belong to the same external electrode group, and the second pair of external positive electrodes 41b and the second pair of external negative electrodes 42b belong to another external electrode group.

Each of the chip bonding pad groups 44 corresponds to one of the light emitting chips 30, and includes two chip bonding pads electrically isolated from each other and corresponding to the chip electrodes of the light emitting chips 30, and a bottom view of the light emitting chips 30 of a flip-chip structure is shown in fig. 10, so that the chip electrodes of the light emitting chips 30 and the corresponding chip bonding pads on the substrate 40 are bonded together to achieve electrical connection when the light emitting chips 30 of the flip-chip structure are disposed on the substrate 40. In the present embodiment, at least four chip-bonding pads 44 are disposed on the substrate 40, for example, just four chip-bonding pads 44 are disposed in fig. 9a, but in other examples, the number of chip-bonding pads 44 may be greater, and the specific number may be determined according to the number of light emitting chips 30 that need to be disposed on the substrate 40.

A plurality of bridge pads 450 are included in each bridge pad set 45, and the bridge pads 450 are electrically isolated from each other. It will be appreciated that the bridge pad set 45 on the substrate 40 corresponds to the bridge devices 20 on the substrate 40 one by one, so that the number of bridge pads 450 in the bridge pad set 45 is related to the number of bridge electrodes 220 in the bridge devices 20, and the bridge pads 450 correspond to the bridge electrodes 220 one by one. In addition, the relative positional relationship between the bridge pads 450 in the bridge pad set 45 is substantially identical to the relative positional relationship between the bridge electrodes 220 in the bridge device 20, so that it is ensured that each bridge electrode 220 can be bonded exactly to the corresponding bridge pad 450 when the bridge device 20 is disposed on the substrate 40 with the bridge electrodes 220 oriented toward the substrate 40. For convenience of explanation of the positional relationship of the bridge pads 450 in the bridge pad set 45, the four bridge pads 450 in the bridge pad set 45 in fig. 9a are denoted herein by "a", "b", "c" and "d", respectively, wherein the bridge pads a, b, c, d correspond to the bridge electrodes A, B, C, D, respectively, so that a straight line passing through the bridge pad a and the bridge pad b crosses a straight line passing through the bridge pad c and the bridge pad d, respectively. In addition, although fig. 9a shows only one bridge pad set 45 being provided in the substrate 40, in other examples of the present embodiment, more bridge pad sets 45 may be provided on the substrate 40.

In the present embodiment, four chip-bonding pads 44 of at least four chip-bonding pads 44 on the substrate 40 are respectively used as four vertices, and are connected end to form a quadrilateral, such as a rectangle or a parallelogram, in which the bridge-bonding pad set 45 is located, and the quadrilateral formed by surrounding the four chip-bonding pads 44 is marked with a thick dotted frame Q in fig. 9a, but it will be understood by those skilled in the art that this marking is only for convenience of understanding the scheme, and the thick dotted frame Q cannot be seen in the actual product. Each bridge pad 450 in the bridge pad set 45 corresponds to one of the chip pad groups 44 and is electrically connected to one of the chip pads in its corresponding chip pad group 44, for example, please refer to fig. 9b, which further illustrates the disposition of the conductive layer inside the substrate 40 in a diagonal fill pattern on the basis of fig. 9a, and the electrical connection relationship between the external electrode, the chip pad and the bridge pad 450 on the substrate 40 can be determined according to fig. 9 b: each bridge pad 450 is electrically connected to a chip pad located closer thereto.

It will be appreciated that although the light emitting chip 30 and the bridge device 20 are not strictly branched on the substrate 40 before being disposed on the substrate 40, the substrate 40 for flip-chip application needs to consider the disposition of the light emitting chip 30 and the bridge device 20 in the design stage, so that a "break-point branch" is already formed at the end of the design of the substrate 40, and the complete branch can be formed after the light emitting chip 30 and the bridge device 20 are disposed on the break-point branch. The breakpoint branch comprises several chip bonding pad groups 44 and one pair of external electrode groups, two external electrodes in the external electrode groups are arranged at two ends of the breakpoint branch and are respectively electrically connected with two chip bonding pads at the extreme ends in the breakpoint branch, for example, in fig. 9b, a first external positive electrode 41a at the upper left corner of the substrate 40 and a first external negative electrode 42a at the lower right corner belong to the first external electrode group, and form a breakpoint branch extending from the upper left corner to the lower right corner of the substrate 40 together with the two chip bonding pad groups 44 at the upper left corner and the lower right corner, so the first external positive electrode 41a and the first external negative electrode 42a are respectively electrically connected with the chip bonding pad at the upper left corner and the chip bonding pad at the lower right corner; the second external positive electrode 41b located at the upper right corner of the substrate 40 and the second external negative electrode 42b located at the lower left corner belong to a second external electrode group, and form a breakpoint branch that runs from the upper right to the lower left corner of the substrate 40 together with the two chip pad groups 44 located at the upper right corner and the lower left corner, so that the second external positive electrode 41b and the second external negative electrode 42b are electrically connected to the chip pad located at the upper right corner and the chip pad located at the lower left corner, respectively. As can be seen in fig. 9a, 9b and 12a, the external electrodes are typically distributed at the edge of the substrate 40, and one external electrode corresponds to a chip pad group 44 near the edge of the substrate 40 and is electrically connected to one chip pad in the chip pad group 44, typically to a chip pad nearer to the chip pad group 44.

As will be appreciated by those skilled in the art, since a portion of the die pads on the substrate 40 need to be electrically connected to the external electrodes through the circuitry of the substrate 40 itself and a portion of the die pads need to be electrically connected to the bridge pads 450, in some examples of the present embodiment, the die pads electrically connected together and the external electrodes may be formed as a single unit, i.e., a large area pad, which is used for both the electrical connection of the die electrodes of the same light emitting die 30 and the electrical connection of the external power source. Likewise, the chip pad and the bridge pad 450 electrically connected together may be formed as a single body, i.e., a large-area pad for both the chip electrode electrical connection of the same light emitting chip 30 and the bridge electrode 220 of the bridge device 20.

The light emitting device 50 provided in this embodiment is further described below, and the light emitting device 50 using the flip-chip light emitting chip 30 will be described first:

example 1:

referring to fig. 11, a schematic diagram of a light emitting device 50 formed after the light emitting chip 30 and the bridge device 20 are disposed on the substrate 40 in fig. 9a is shown: in fig. 11, the first color temperature light emitting chips 30a are disposed on the chip pad groups 44 at the upper left and lower right of the substrate 40, and the two first color temperature light emitting chips 30a are connected in series through one bridge electrode group in the bridge device 20. The second color temperature light emitting chips 30b are disposed on the chip pad groups 44 at the upper right and lower left corners of the substrate 40, and the two second color temperature light emitting chips 30b are connected in series through the other bridge electrode group in the bridge device 20.

Example 2:

the light emitting device 50 includes at least two light emitting chips 30 of a first color temperature, at least two light emitting chips 30 of a second color temperature, at least two light emitting chips 30 of a third color temperature, and at least two light emitting chips 30 of a fourth color temperature; the bridge device 20 at least comprises a first bridge device and a second bridge device, wherein two light emitting chips 30 with a first color temperature are connected in series through a first bridge electrode group of the first bridge device; the two light emitting chips with the second color temperature are connected in series through the second bridging electrode group of the first bridging device. The two light emitting chips with the third color temperature are connected in series through a first bridging electrode group of the second bridging device; the two light emitting chips with the fourth color temperature are connected in series through the second bridging electrode group of the second bridging device. For example, referring to fig. 12a, fig. 12a shows a schematic diagram of another light emitting device 50, in which the light emitting device 50 includes 16 light emitting chips 30, and the light emitting chips 30 include a third color temperature light emitting chip 30c and a fourth color temperature light emitting chip 30d in addition to the first color temperature light emitting chip 30a and the second color temperature light emitting chip 30b, and in fig. 12a, the light emitting chips 30 with four color temperatures form four independent serial branches respectively, and a schematic diagram of a corresponding circuit is shown in fig. 12 b.

Example 3:

in the light emitting device 50 of fig. 13a, the 16 light emitting chips 30 are divided into only two color temperatures, however, in fig. 13a, the light emitting chips 30 of each color temperature form two parallel serial branches, and only one external electrode group is disposed on the substrate 40 for the light emitting chips 30 of each color temperature, and the corresponding schematic circuit diagram is shown in fig. 13 b.

In addition, as can be seen from fig. 13a, the bridge device 20 is not only capable of connecting the light emitting chips 30 that need to be cross-connected in a spatial location, but also may electrically connect the chip pads on the substrate 40 where the light emitting chips 30 are not disposed.

As can be seen from the foregoing description, in the light emitting device 50 using the flip chip, since the cross connection between the light emitting chips 30 is not required to be achieved by the substrate 40, the structure of the substrate 40 is simplified, and the substrate 40 can be replaced by a single-layer substrate from the original double-layer or multi-layer substrate, which greatly reduces the design and production costs of the substrate 40.

In addition, it should be noted that most of the circuits in the substrate 40 used with the flip chip are hidden inside the substrate 40, but the conductive layers in the substrate 40 are shown in the diagonal line filled pattern for the purpose of representing the electrical connection relation of the elements in the light emitting device 50 in the foregoing example of this embodiment, but these conductive layers may not be visible inside the substrate in actual products.

The following describes a light emitting device 50 to which the forward mounted light emitting chip 30 is applied:

example 4:

in this example, when the light emitting chips 30 are disposed on the substrate 40, the chip electrodes face away from the substrate 40, and the bridge device 20 is also disposed in a state that the bridge electrodes 220 face away from the substrate 40, and referring to fig. 14 and 15, 16 light emitting chips 30 are disposed in the light emitting device 50 shown in fig. 14 and 15, and one part of the light emitting chips 30 is a first color temperature light emitting chip 30a and the other part is a second color temperature light emitting chip 30b. In fig. 14, the first color temperature light emitting chip 30a forms two series branches, and the second color temperature light emitting chip 30b forms two series branches, and in some examples of the present embodiment, the light emitting chips 30 with the same color temperature correspond to only one external electrode group, however, it will be understood by those skilled in the art that in other examples, each series branch may have its own external electrode group. In fig. 15, all the first color temperature light emitting chips 30a form one serial branch in common, and all the second color temperature light emitting chips 30b form another serial branch in common. In the light emitting device 50 shown in fig. 14, eight bridge devices 20 are used in total, in the light emitting device 50 shown in fig. 15, seven bridge devices 20 are used, and the arrangement of the bridge devices 20 in the two light emitting devices 50 is completely different, therefore, when the light emitting device 50 is matched with the light emitting chip 30 with the normal structure, the number and arrangement of the bridge devices 20 are not strictly regular, the light emitting device 50 can be flexibly determined according to the space trend of the branches, the light emitting chips 30 in the light emitting device 50 can be freely and flexibly arranged by using the bridge devices 20, the light emitting chips 30 with different color temperatures can be alternately arranged in the rows and the columns of the chip array, the excellent light mixing effect is obtained, meanwhile, the problems of gold wire crossing and circuit short circuit do not need to be worry, the decoupling of the circuit structure on the substrate 40 and the arrangement of the light emitting chips 30 is realized, and the flexibility of the preparation of the light emitting device 50 is increased.

Example 5:

referring to fig. 16, 16 light emitting chips 30 are disposed in the light emitting device 50, and the light emitting chips 30 include a first color temperature light emitting chip 30a, a second color temperature light emitting chip 30b, a third color temperature light emitting chip 30c and a fourth color temperature light emitting chip 30d, wherein the light emitting chips 30 with four color temperatures respectively form four independent serial branches.

Example 6:

in the light emitting device 50 shown in fig. 17, the substrate is a support 60, the support 60 is specifically a two-way EMC (Epoxy Molding Compound, epoxy molding compound/epoxy molding compound) support, the support 60 includes two external electrode groups, and the arrangement and connection relationship between the light emitting chip 30 and the bridge device 20 in the support 60 are substantially identical to those shown in fig. 14, which is not described herein.

In some examples of the present embodiment, the external power supply may be directly electrically connected to the chips of the light emitting chips 30 at the ends of the series arms or to the bridge electrodes 220 of the bridge devices 20 at the ends of the series arms without providing the external electrodes on the substrate 40, in which case, no circuit may even be provided in the substrate 40, which only serves to carry the light emitting chips 30 and the bridge devices 20.

In addition, in some examples of the present embodiment, a reflective layer may be disposed on a side of the substrate 40 facing the light emitting chip 30 in the light emitting device 50, thereby improving the light emitting efficiency of the light emitting device 50: for the light emitting device 50 to which the flip chip is applied, since the external electrode group, the chip pad group, the bridge pad set, and the like are provided on the substrate 40, in order to avoid the reflective layer affecting the electrical relationship between these components, a reflective layer of an insulating material may be provided, for example, the reflective layer may be formed by insulating reflective glue. In the light emitting device 50 to which the front-mounted chip is applied, the reflective layer may be formed of a metal having good reflectivity, such as a reflective silver layer, a reflective aluminum layer, or the like, in addition to the insulating reflective paste.

It should be noted that, although the light emitting chips 30 are divided into the first color temperature light emitting chip 30a, the second color temperature light emitting chip 30b, the third color temperature light emitting chip 30c, the fourth color temperature light emitting chip 30d, and so on in the foregoing embodiments, in fact, in some examples, all the light emitting chips 30 provided on the substrate 40 have no difference in their epitaxial structure and epitaxial material, that is, all the light emitting chips 30 are the same, and the light emitting devices 50 can emit light with different color temperatures because the light emitting chips 30 on the substrate 40 are subjected to COB packaging by using packaging adhesives with different color temperatures in the process of preparing the light emitting devices 50, for example, if a certain light emitting chip 30 needs to emit light with the first color temperature according to the design of the light emitting devices 50, it may be subjected to packaging by using the first color temperature packaging adhesives; likewise, if a certain light emitting chip 30 needs to emit light according to the second color temperature according to the design of the light emitting device 50, it may be encapsulated by using the second color temperature encapsulation glue, and the other color temperatures are similar, which will not be described herein. In some examples of this embodiment, the encapsulant may include three primary color phosphors configured in different proportions to obtain phosphors of different color temperatures. Taking rare earth trichromatic fluorescent powder as an example, the fluorescent powder comprises red powder, green powder, yellow powder and blue powder, and the four colors of powder are mixed according to a certain proportion to obtain different color temperatures (2700-6500K). In addition, the content of fluorescent powder in the fluorescent glue is reduced, and the color temperature is increased; conversely, the color temperature decreases as the phosphor content increases.

Of course, in other examples of the present embodiment, the light emitting chips 30 themselves have different color temperatures of the first color temperature light emitting chip 30a, the second color temperature light emitting chip 30b, the third color temperature light emitting chip 30c, and the fourth color temperature light emitting chip 30d are not excluded.

The LED provided in the foregoing embodiment may be applied to various light emitting fields, for example, it may be manufactured into a backlight module applied to a display backlight field (may be a backlight module of a terminal such as a television, a display, a mobile phone, etc.). It can be applied to the backlight module at this time. The display device can be applied to the field of display backlight, key backlight, shooting, household illumination, medical illumination, decoration, automobile, traffic and the like. When the light source is applied to the field of key backlight, the light source can be used as a key backlight light source with key equipment such as a mobile phone, a calculator, a keyboard and the like; when the device is applied to the shooting field, the device can be manufactured into a flash lamp of a camera; when the LED lamp is applied to the field of household illumination, the LED lamp can be manufactured into a floor lamp, a desk lamp, an illuminating lamp, a ceiling lamp, a down lamp, a projection lamp and the like; when the light source is applied to the field of medical illumination, the light source can be manufactured into operating lamps, low-electromagnetic illumination lamps and the like; when the light is applied to the decoration field, various decorative lamps such as various colored lamps, landscape lighting lamps and advertisement lamps can be manufactured; when the material is applied to the field of automobiles, the material can be manufactured into automobile lamps, automobile indication lamps and the like; when the LED street lamp is applied to the traffic field, various traffic lamps can be manufactured, and various street lamps can also be manufactured. The above-described applications are only a few applications of the example shown in the present embodiment, and it should be understood that the application of the LED in the present embodiment is not limited to the fields of the above-described examples.

It is to be understood that the invention is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.

Claims

1. A bridge device, comprising: the bridge electrode assembly comprises a bearing plate and at least two bridge electrode groups arranged on the bearing plate, wherein the bridge electrode groups are electrically isolated from each other, each bridge electrode group consists of two bridge electrodes which are electrically connected with each other, and the at least two bridge electrode groups comprise a first bridge electrode group and a second bridge electrode group; a first straight line defined by two of the bridge electrodes in the first bridge electrode group intersects a projection line of a second straight line defined by two of the bridge electrodes in the second bridge electrode group on the carrier plate.

2. The bridge device of claim 1, wherein the carrier plate includes an insulating layer and a conductive layer carried on the insulating layer, the conductive layer including a first connecting wire configured to connect two of the bridge electrodes in the first set of bridge electrodes and a second connecting wire configured to connect two of the bridge electrodes in the second set of bridge electrodes.

3. The bridge device of claim 2, wherein the insulating layer comprises an unintentionally doped GaN layer and a growth substrate for growing the unintentionally doped GaN layer, the growth substrate being layered with the unintentionally doped GaN layer, and the conductive layer and the growth substrate being on opposite sides of the unintentionally doped GaN layer, respectively.

4. The bridge device of claim 2, wherein the carrier plate further comprises a passivation layer covering at least a side of the conductive layer remote from the insulating layer, and wherein a side of the bridge electrode remote from the carrier plate is exposed to the passivation layer.

5. The bridge device of claim 1, wherein the carrier plate comprises a plurality of insulating layers and at least two conductive layers, wherein the at least two conductive layers comprise a first conductive layer and a second conductive layer, which are separated by at least one of the insulating layers; two bridging electrodes in the first bridging electrode group are respectively and electrically connected with the first conductive layer through first through holes, and two bridging electrodes in the second bridging electrode group are respectively and electrically connected with the second conductive layer through second through holes.

6. The bridge device of claim 5, wherein the plurality of insulating layers comprises a substrate layer, a first unintentionally doped GaN layer, and a second unintentionally doped GaN layer disposed in a stack, the first conductive layer being located between the substrate layer and the first unintentionally doped GaN layer, the second conductive layer being located between the first unintentionally doped GaN layer and the second unintentionally doped GaN layer.

7. The bridge device of any one of claims 1-6, wherein both of the bridge electrodes of the first set of bridge electrodes and both of the bridge electrodes of the second set of bridge electrodes are located on the same surface of the carrier plate.

8. The bridge device of claim 7, wherein the surface of the carrier plate carrying the bridge electrodes has a rectangular outline, and each bridge electrode of the first bridge electrode set and the second bridge electrode set is located at four corners of the rectangular outline.

9. A substrate, which is characterized by comprising a base material, a chip bonding pad group and a bridging bonding pad set which are arranged on the base material; four of the chip-pad sets are disposed around one of the bridge pad sets;

The bridge pad set configured to electrically connect the bridge device of any one of claims 1-8, the bridge pad set having four bridge pads in one-to-one correspondence with the bridge electrodes, each of the chip pad sets having chip pads in one-to-one correspondence with chip electrodes of a light emitting chip; the chip bonding pads are configured to be electrically connected with the chip electrodes corresponding to the chip bonding pads; the bridge pad is configured to be electrically connected with the bridge electrode corresponding thereto.

10. The substrate of claim 9, further comprising at least two sets of external electrodes, each set of external electrodes being made up of two external electrodes, each of the external electrodes corresponding to one of the die pad sets, and the external electrodes being electrically connected to one of the die pads in the corresponding die pad set.

11. A light emitting device, comprising:

a substrate;

a light emitting chip; and

a bridge device as claimed in any one of claims 1 to 8;

the light emitting chips and the bridging devices are arranged on the substrate, four light emitting chips are arranged around one bridging device, two of the light emitting chips are connected in series through a first bridging electrode group of the bridging device, and the other two light emitting chips are connected in series through a second bridging electrode group of the bridging device.

12. The light-emitting device according to claim 11, wherein the substrate is the substrate according to claim 9 or 10, the light-emitting chip is of a flip-chip structure, and a chip electrode of the light-emitting chip is bonded to the chip pad group; the bridge electrode of the bridge device faces the substrate and is bonded with the bridge pad on the substrate.

13. The light-emitting device according to claim 11, wherein the light-emitting chip is of a front-mounted structure, a bridge electrode of the bridge device faces away from the substrate, and a chip electrode of the light-emitting chip is electrically connected with the bridge electrode through a bonding wire.

14. The light-emitting device according to claim 13, wherein a metal reflective layer is provided on a side of the substrate facing the light-emitting chip and the bridge device.

15. The light-emitting device according to any one of claims 11 to 14, wherein the light-emitting chips connected in series through the first bridge electrode group are a first light-emitting chip and a second light-emitting chip of a first color temperature, and the light-emitting chips connected in series through the second bridge electrode group are a third light-emitting chip and a fourth light-emitting chip of a second color temperature; the negative electrode of the first light-emitting chip is electrically connected with one bridging electrode in the first bridging electrode group, the positive electrode of the second light-emitting chip is electrically connected with the other bridging electrode in the first bridging electrode group, and at least one of the positive electrode of the first light-emitting chip and the negative electrode of the second light-emitting chip is electrically connected with the light-emitting chip with the same color temperature except the first light-emitting chip and the second light-emitting chip; the negative electrode of the third light-emitting chip is electrically connected with one bridging electrode in the second bridging electrode group, the positive electrode of the fourth light-emitting chip is electrically connected with the other bridging electrode in the second bridging electrode group, and at least one of the positive electrode of the third light-emitting chip and the negative electrode of the fourth light-emitting chip is electrically connected with the light-emitting chip with the same color temperature except the third light-emitting chip and the fourth light-emitting chip.

16. The light-emitting device according to any one of claims 11 to 14, wherein the light-emitting chips comprise at least two light-emitting chips of a first color temperature, at least two light-emitting chips of a second color temperature, at least two light-emitting chips of a third color temperature, and at least two light-emitting chips of a fourth color temperature; the bridge device at least comprises a first bridge device and a second bridge device, wherein two light emitting chips with the first color temperature are connected in series through a first bridge electrode group of the first bridge device; the two light emitting chips with the second color temperature are connected in series through a second bridging electrode group of the first bridging device; the two light emitting chips with the third color temperature are connected in series through the first bridging electrode group of the second bridging device; and the two light emitting chips with the fourth color temperature are connected in series through a second bridging electrode group of the second bridging device.