CN116130337A - Wafer thinning processing method, device, equipment and medium - Google Patents
Wafer thinning processing method, device, equipment and medium Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The application provides a wafer thinning processing method, device, equipment and medium, wherein the method comprises the following steps: acquiring the thickness of a wafer to be processed, a first target thickness value corresponding to the wafer to be processed and a first thinning compensation amount; generating a first machine file according to the thickness of the wafer to be processed, a first target thickness value corresponding to the wafer to be processed and a first thinning treatment compensation amount; controlling the thinning machine to thin the wafer to be processed according to the first machine file to obtain a target wafer; and measuring the thickness of the target wafer, and updating the first thinning compensation amount according to the thickness of the target wafer and the first target thickness value. According to the method and the device, the compensation quantity is updated in real time through the detection of the thickness of the wafer to be processed and the update of the compensation quantity in the first thinning treatment, so that the effect of improving the thinning accuracy of the wafer is achieved.
Description
Technical Field
The present disclosure relates to the field of wafer manufacturing technologies, and in particular, to a wafer thinning processing method, device, equipment, and medium.
Background
In the semiconductor manufacturing process, the accuracy of the thinning machine may drift over time, requiring corresponding compensation for the removal.
At present, the determination of the compensation amount is manually maintained and calculated, and the real-time performance is lacking, particularly for the mass continuous wafer thinning treatment, the accuracy of the thinning treatment is obviously reduced along with the time.
Disclosure of Invention
In view of this, the present application aims to provide a method, an apparatus, a device and a medium for thinning a wafer, which can solve the problem that the accuracy of thinning processing is obviously reduced due to the continuous wafer thinning processing in large batches in real time, especially for the continuous wafer thinning processing in large batches, by manually maintaining and calculating the compensation amount in the prior art through detecting the thickness of the wafer to be processed and updating the compensation amount in the first thinning processing in real time, so as to achieve the effect of updating the compensation amount in real time and improving the accuracy of wafer thinning.
In a first aspect, an embodiment of the present application provides a method for thinning a wafer, where the method includes: acquiring a thickness value of a wafer to be processed, a first target thickness value corresponding to the wafer to be processed and a first thinning treatment compensation quantity; generating a first machine file according to the thickness value of the wafer to be processed, a first target thickness value corresponding to the wafer to be processed and a first thinning compensation amount, wherein the first machine file is used for indicating a thinning machine to thin the wafer; controlling the thinning machine to thin the wafer to be processed according to the first machine file to obtain a target wafer; and measuring the thickness of the target wafer, and updating the first thinning compensation amount according to the thickness value of the target wafer and the first target thickness value.
Optionally, the method further comprises: judging whether the absolute value of the difference value between the thickness value of the target wafer and the first target thickness value is larger than a first target value; if the absolute value of the difference between the thickness value of the target wafer and the first target thickness value is larger than a first target value, judging whether the difference between the thickness value of the target wafer and the first target thickness value is negative or not; if the difference between the thickness value of the target wafer and the first target thickness value is negative, determining that the target wafer is a defective product; and if the difference value between the thickness value of the target wafer and the first target thickness value is not negative, re-thinning the wafer so that the absolute value of the difference value between the thickness value of the target wafer and the first target thickness value is smaller than or equal to a first target value.
Optionally, a plurality of measurement points of thickness of the wafer to be processed are disposed at a plurality of preset positions of the wafer to be processed, wherein the method further comprises: calculating the absolute value of the difference value between the thickness value of each wafer thickness measuring point to be processed and the preset standard wafer thickness value to be processed; judging whether the absolute value of the difference value between the thickness value of each wafer thickness measuring point to be processed and the preset standard wafer thickness value to be processed is larger than a fourth target value; judging whether the number of the thickness measuring points of the wafer to be processed in the wafer to be processed is larger than a third target value or not, wherein the absolute value of the difference value between the thickness value of the thickness measuring point of the wafer to be processed and the thickness value of the preset standard wafer to be processed is larger than the fourth target value; if yes, determining the wafer to be processed as a defective product; if not, determining the final removal amount of each wafer thickness measuring point to be processed according to the thickness value of each wafer thickness measuring point to be processed, the first target thickness value and the first thinning treatment compensation amount.
Optionally, the method further comprises: judging whether a wafer thickness measuring point to be processed with the absolute value of the final removal amount larger than a sixth target value exists or not; if the absolute value of the final removal amount is larger than the thickness measuring point of the wafer to be processed of the sixth target value, determining that the wafer to be processed is a defective product; and if the absolute value of the final removal quantity is not greater than the thickness measuring point of the wafer to be processed of the sixth target value, thinning the wafer to be processed according to the final removal quantity of each thickness measuring point of the wafer to be processed.
Optionally, the first thinning-out processing compensation quantity is updated by: calculating a difference between the thickness value of the target wafer and the first target thickness value; calculating a second thinning process compensation amount according to the first thinning process compensation amount and a difference value between a thickness value of the target wafer and the first target thickness value based on an exponentially weighted average movement model; the first thinning-out processing compensation quantity is deleted, and the second thinning-out processing compensation quantity is determined as the first thinning-out processing compensation quantity.
Optionally, the method further comprises: judging whether the absolute value of the difference value between the second thinning processing compensation quantity and the first thinning processing compensation quantity is larger than a fifth target value; and if the absolute value of the difference between the second thinning compensation quantity and the first thinning compensation quantity is larger than a fifth target value, stopping the operation of the thinning machine, and maintaining the offset of the thinning machine to reduce the offset of the thinning machine.
Optionally, the method further comprises: judging whether the absolute value of the updated first thinning processing compensation quantity is larger than a second target value; and if the updated compensation amount of the first thinning treatment is larger than the second target value, stopping the operation of the thinning machine, and maintaining the offset of the thinning machine to reduce the offset of the thinning machine.
In a second aspect, an embodiment of the present application further provides a wafer thinning processing apparatus, where the apparatus includes:
the data acquisition module is used for acquiring a thickness value of the wafer to be processed, a first target thickness value corresponding to the wafer to be processed and a first thinning treatment compensation quantity;
the machine file generation module is used for generating a machine file according to the thickness value of the wafer to be processed, the first target thickness value corresponding to the wafer to be processed and the first thinning treatment compensation quantity, and the machine file is used for indicating a thinning machine to carry out thinning processing on the wafer;
the thinning processing module is used for controlling the thinning machine to thin the wafer to be processed according to the machine file so as to obtain a target wafer;
and the first thinning treatment compensation quantity updating module is used for measuring the thickness of the target wafer and updating the first thinning treatment compensation quantity according to the thickness value of the target wafer and the first target thickness value.
In a third aspect, embodiments of the present application further provide an electronic device, including: the wafer thinning method comprises the steps of a processor, a memory and a bus, wherein the memory stores machine-readable instructions executable by the processor, when the electronic device is running, the processor and the memory are communicated through the bus, and the machine-readable instructions are executed by the processor to execute the steps of the wafer thinning method.
In a fourth aspect, embodiments of the present application further provide a computer readable storage medium having a computer program stored thereon, which when executed by a processor performs the steps of the wafer thinning processing method as described above.
According to the wafer thinning processing method, device, equipment and medium, the problems that the accuracy of thinning processing is obviously reduced along with the time of mass continuous wafer thinning processing are solved, the compensation quantity is updated in real time, and the accuracy of wafer thinning is improved by manually maintaining and calculating the compensation quantity in the prior art are solved.
In order to make the above objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a wafer thinning method according to an embodiment of the present disclosure;
FIG. 2 is a flowchart of another wafer thinning processing method according to an embodiment of the present disclosure;
FIG. 3 is a schematic view of a wafer thinning apparatus according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. Based on the embodiments of the present application, every other embodiment that a person skilled in the art would obtain without making any inventive effort is within the scope of protection of the present application.
First, application scenarios applicable to the present application will be described. The method and the device can be applied to the technical field of wafer manufacturing.
It has been found that in the semiconductor manufacturing process, the accuracy of the thinning machine drifts over time, requiring corresponding compensation for the removal.
At present, the determination of the compensation amount is manually maintained and calculated, and the real-time performance is lacking, particularly for the mass continuous wafer thinning treatment, the accuracy of the thinning treatment is obviously reduced along with the time.
Based on this, the embodiment of the application provides a method, a device, equipment and a medium for thinning a wafer, which can solve the problems that the determination of the compensation amount in the prior art is maintained and calculated manually, the real-time performance is lacking, and particularly, the thinning precision is obviously reduced due to the time of the mass continuous wafer thinning treatment, so that the effect of updating the compensation amount in real time and improving the thinning precision of the wafer can be achieved.
Referring to fig. 1, fig. 1 is a flowchart of a wafer thinning processing method according to an embodiment of the present application. As shown in fig. 1, a wafer thinning processing method provided in an embodiment of the present application includes:
s101, acquiring a thickness value of a wafer to be processed, a first target thickness value corresponding to the wafer to be processed and a first thinning processing compensation amount.
Wherein the first thinning-out processing compensation quantity is zero at an initial value.
For example, the first target thickness value may be 670 microns, and the thickness of the wafer to be processed should be 775 microns, allowing for an error value of plus or minus 25 microns under normal conditions.
The first thinning compensation amount is updated according to the thickness value of the wafer subjected to the thinning treatment last time by the thinning machine and the first target thickness value, and the accuracy of the thinning of the wafer is improved through updating the first thinning compensation amount by the error of the wafer subjected to the thinning treatment each time.
Before the wafer to be processed is thinned, thickness detection is required to be performed on the wafer to be processed, so that abnormality of a thinning machine caused by overlarge errors of the wafer to be processed is avoided.
Optionally, a plurality of measurement points of the thickness of the wafer to be processed are arranged at a plurality of preset positions of the wafer to be processed.
Wherein the method further comprises: calculating the absolute value of the difference value between the thickness value of each wafer thickness measuring point to be processed and the preset standard wafer thickness value to be processed; judging whether the absolute value of the difference value between the thickness value of each wafer thickness measuring point to be processed and the preset standard wafer thickness value to be processed is larger than a fourth target value; judging whether the number of the thickness measuring points of the wafer to be processed in the wafer to be processed is larger than a third target value or not, wherein the absolute value of the difference value between the thickness value of the thickness measuring point of the wafer to be processed and the thickness value of the preset standard wafer to be processed is larger than the fourth target value; if yes, determining the wafer to be processed as a defective product; if not, determining the final removal amount of each wafer thickness measuring point to be processed according to the thickness value of each wafer thickness measuring point to be processed, the first target thickness value and the first thinning treatment compensation amount.
For example, 360 measurement points of the thickness of the wafer to be processed are preset, the preset standard thickness value of the wafer to be processed may be 670 micrometers, the fourth target value is a thickness allowable error value of each measurement point, the fourth target value may be 25 micrometers, the third target value may be a number of points allowable to exceed the error value, and the third target value may be 20 points.
For example, when the thickness value of 6 to-be-processed wafer thickness measuring points is smaller than 645 micrometers and the thickness value of 16 to-be-processed wafer thickness measuring points is larger than 695 micrometers in 360 to-be-processed wafer thickness measuring points, the number of to-be-processed wafer thickness measuring points, of which the absolute value of the difference from the preset standard to-be-processed wafer thickness value 670 micrometers is larger than 25 micrometers, is 22 and exceeds the third target value, and at this time, the thickness uniformity in the to-be-processed wafer is determined to be not in accordance with the thinning requirement, and the to-be-processed wafer is determined to be a defective product.
Optionally, the method further comprises: judging whether a wafer thickness measuring point to be processed with the absolute value of the final removal amount larger than a sixth target value exists or not; if the absolute value of the final removal quantity is larger than the thickness measuring point of the wafer to be processed of the sixth target value, determining that the wafer to be processed is a defective product; and if the absolute value of the final removal quantity is not greater than the thickness measuring point of the wafer to be processed of the sixth target value, thinning the wafer to be processed according to the final removal quantity of each thickness measuring point of the wafer to be processed.
Illustratively, the sixth target value may be 100 microns, which is the maximum wafer thinning amount by which the thinning machine thins the wafer twice.
Optionally, the method further comprises: judging whether the absolute value of the difference value between the thickness value of the target wafer and the first target thickness value is larger than a first target value; if the absolute value of the difference between the thickness value of the target wafer and the first target thickness value is larger than a first target value, judging whether the difference between the thickness value of the target wafer and the first target thickness value is negative or not; if the difference between the thickness value of the target wafer and the first target thickness value is negative, determining that the target wafer is a defective product; and if the difference value between the thickness value of the target wafer and the first target thickness value is not negative, re-thinning the wafer so that the absolute value of the difference value between the thickness value of the target wafer and the first target thickness value is smaller than or equal to a first target value.
Here, the first target value may be 30 micrometers, and when the difference between the thickness value of the target wafer and the first target thickness value is minus 50 micrometers, the target wafer is determined to be a defective product; when the difference between the thickness value of the target wafer and the first target thickness value is positive 50 micrometers, the target wafer can be subjected to thinning again.
Illustratively, the first target thickness value is 675 microns and the first target value is 30 microns, and if the average thickness of the target wafer is 710 microns and the first target thickness value differs by more than 30 microns, the wafer needs to be separated from the master batch and the thinning process is resumed.
S102, generating a first machine file according to the thickness value of the wafer to be processed, a first target thickness value corresponding to the wafer to be processed and a first thinning compensation amount, wherein the first machine file is used for indicating a thinning machine to thin the wafer.
For example, when the number of cumulative failure points of the wafer to be processed is smaller than 20, the final removal amount corresponding to each measuring point is calculated for the wafer according to the thickness value of each measuring point, the first target thickness value and the first thinning compensation amount.
Judging whether the final removal amount corresponding to each measuring point of the wafer to be processed is in the allowable removal amount safety range or not; if the removal amount of each measuring point of the wafer to be processed exceeds the allowable removal amount safety range, determining that the wafer to be processed is a defective product; and if the removal amount of each measuring point of the wafer to be processed is within the allowable removal amount safety range, thinning the wafer to be processed.
Illustratively, if the measured thickness values for 350 points out of 360 points of the wafer to be processed are within 775 microns +/-25 microns, and the calculated final removal for these points are all within the removal safety range, the final removal data for these 350 points is retained.
Thus, the machine file can be generated according to the machine file format according to the final removal data of the 350 points.
S103, controlling the thinning machine to thin the wafer to be processed according to the machine file, and obtaining the target wafer.
S104, measuring the thickness of the target wafer, and updating the first thinning compensation amount according to the thickness of the target wafer and the first target thickness value.
Specifically, referring to fig. 2, fig. 2 is a flowchart of another wafer thinning processing method according to an embodiment of the present application. As shown in fig. 2, the wafer thinning processing method provided in the embodiment of the present application includes:
s201, calculating a difference value between the thickness of the target wafer and a first target thickness value.
S202, calculating a second thinning processing compensation quantity based on an exponential weighted average movement model according to the first thinning processing compensation quantity of the thinning machine and the difference value between the thickness of the target wafer and the first target thickness value.
In this step, an exponentially weighted average movement model (exponentially weighted moving averages model, EWMA model) is a model in which different weights are given to the movement models according to the distances between the history data and the current time, and the weights given to the movement models are larger as the movement models are closer to the current time.
S203, deleting the first thinning processing compensation quantity and determining the second thinning processing compensation quantity as the first thinning processing compensation quantity.
Optionally, the method further comprises: judging whether the absolute value of the difference value between the second thinning processing compensation quantity and the first thinning processing compensation quantity is larger than a fifth target value; and if the absolute value of the difference between the second thinning compensation quantity and the first thinning compensation quantity is larger than a fifth target value, stopping the operation of the thinning machine, and maintaining the offset of the thinning machine to reduce the offset of the thinning machine.
Here, the fifth target value is used to indicate a single maximum thinning offset, and when the absolute value of the difference between the second thinning compensation amount and the first thinning compensation amount is greater than the fifth target value, it indicates that the offset of the thinning machine is abnormal, and repair and maintenance are required for the thinning machine.
Optionally, determining whether the absolute value of the updated first thinning-out processing compensation quantity is greater than a second target value; and if the updated compensation amount of the first thinning treatment is larger than the second target value, stopping the operation of the thinning machine, and maintaining the offset of the thinning machine to reduce the offset of the thinning machine.
Here, the second target value is used to indicate an upper limit of the compensation amount of the thinning machine, and maintenance of the thinning machine is required when the compensation amount of the thinning machine exceeds the second target value.
According to the wafer thinning processing method, the problems that the accuracy of thinning processing is obviously reduced along with the time of mass continuous wafer thinning processing, the compensation quantity is updated in real time, and the accuracy of wafer thinning is improved are solved by detecting the thickness of the wafer to be processed and updating the compensation quantity of the first thinning processing in real time, wherein the determination of the compensation quantity in the prior art is maintained and calculated manually and is lack of real-time.
Based on the same inventive concept, the embodiment of the present application further provides a wafer thinning processing device corresponding to the wafer thinning processing method, and since the principle of solving the problem by the device in the embodiment of the present application is similar to that of the wafer thinning processing method in the embodiment of the present application, the implementation of the device may refer to the implementation of the method, and the repetition is omitted.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a wafer thinning apparatus according to an embodiment of the present disclosure. As shown in fig. 3, the wafer thinning processing apparatus 300 includes:
the data acquisition module 301 is configured to acquire a thickness value of a wafer to be processed, a first target thickness value corresponding to the wafer to be processed, and a first thinning process compensation amount;
the machine file generating module 302 is configured to generate a machine file according to a thickness value of a wafer to be processed, a first target thickness value corresponding to the wafer to be processed, and a first thinning compensation amount, where the machine file is used to instruct a thinning machine to perform thinning processing on the wafer;
a thinning processing module 303, configured to control the thinning machine to perform thinning processing on a wafer to be processed according to the machine file, so as to obtain a target wafer;
the first thinning process compensation module 304 is configured to measure a thickness value of the target wafer, and update the first thinning process compensation according to the thickness value of the target wafer and the first target thickness value.
According to the wafer thinning processing device, the problems that the accuracy of thinning processing is obviously reduced along with the time of mass continuous wafer thinning processing are solved, the compensation quantity is updated in real time, and the accuracy of wafer thinning is improved are solved.
Referring to fig. 4, fig. 4 is a schematic structural diagram of an electronic device according to an embodiment of the present application. As shown in fig. 4, the electronic device 400 includes a processor 410, a memory 420, and a bus 430.
The memory 420 stores machine-readable instructions executable by the processor 410, when the electronic device 400 is running, the processor 410 communicates with the memory 420 through the bus 430, and when the machine-readable instructions are executed by the processor 410, the steps of the wafer thinning processing method in the method embodiments shown in fig. 1 and fig. 2 can be executed, and detailed implementation manners can refer to method embodiments and are not repeated herein.
The embodiment of the present application further provides a computer readable storage medium, where a computer program is stored on the computer readable storage medium, and when the computer program is executed by a processor, the steps of the wafer thinning processing method in the method embodiments shown in fig. 1 and fig. 2 may be executed, and a specific implementation manner may refer to the method embodiment and will not be described herein.
It will be clear to those skilled in the art that, for convenience and brevity of description, specific working procedures of the above-described systems, apparatuses and units may refer to corresponding procedures in the foregoing method embodiments, and are not repeated herein.
In the several embodiments provided in this application, it should be understood that the disclosed systems, devices, and methods may be implemented in other manners. The above-described apparatus embodiments are merely illustrative, for example, the division of the units is merely a logical function division, and there may be other manners of division in actual implementation, and for example, multiple units or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be through some communication interface, device or unit indirect coupling or communication connection, which may be in electrical, mechanical or other form.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in each embodiment of the present application may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit.
The functions, if implemented in the form of software functional units and sold or used as a stand-alone product, may be stored in a non-volatile computer readable storage medium executable by a processor. Based on such understanding, the technical solution of the present application may be embodied essentially or in a part contributing to the prior art or in a part of the technical solution, in the form of a software product stored in a storage medium, including several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the methods described in the embodiments of the present application. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (Random Access Memory, RAM), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
Finally, it should be noted that: the foregoing examples are merely specific embodiments of the present application, and are not intended to limit the scope of the present application, but the present application is not limited thereto, and those skilled in the art will appreciate that while the foregoing examples are described in detail, the present application is not limited thereto. Any person skilled in the art may modify or easily conceive of the technical solution described in the foregoing embodiments, or make equivalent substitutions for some of the technical features within the technical scope of the disclosure of the present application; such modifications, changes or substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application, and are intended to be included in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A method of thinning a wafer, the method comprising:
acquiring a thickness value of a wafer to be processed, a first target thickness value corresponding to the wafer to be processed and a first thinning treatment compensation quantity;
generating a first machine file according to the thickness value of the wafer to be processed, a first target thickness value corresponding to the wafer to be processed and a first thinning compensation amount, wherein the first machine file is used for indicating a thinning machine to thin the wafer;
controlling the thinning machine to thin the wafer to be processed according to the first machine file to obtain a target wafer;
and measuring the thickness of the target wafer, and updating the first thinning compensation amount according to the thickness value of the target wafer and the first target thickness value.
2. The method according to claim 1, wherein the method further comprises:
judging whether the absolute value of the difference value between the thickness value of the target wafer and the first target thickness value is larger than a first target value;
if the absolute value of the difference between the thickness value of the target wafer and the first target thickness value is larger than a first target value, judging whether the difference between the thickness value of the target wafer and the first target thickness value is negative or not;
if the difference between the thickness value of the target wafer and the first target thickness value is negative, determining that the target wafer is a defective product;
and if the difference value between the thickness value of the target wafer and the first target thickness value is not negative, re-thinning the wafer so that the absolute value of the difference value between the thickness value of the target wafer and the first target thickness value is smaller than or equal to a first target value.
3. The method of claim 1, wherein a plurality of measurement points of a thickness of the wafer to be processed are provided at a plurality of predetermined positions of the wafer to be processed,
wherein the method further comprises:
calculating the absolute value of the difference value between the thickness value of each wafer thickness measuring point to be processed and the preset standard wafer thickness value to be processed;
judging whether the absolute value of the difference value between the thickness value of each wafer thickness measuring point to be processed and the preset standard wafer thickness value to be processed is larger than a fourth target value;
judging whether the number of the thickness measuring points of the wafer to be processed in the wafer to be processed is larger than a third target value or not, wherein the absolute value of the difference value between the thickness value of the thickness measuring point of the wafer to be processed and the thickness value of the preset standard wafer to be processed is larger than the fourth target value;
if yes, determining the wafer to be processed as a defective product;
if not, determining the final removal amount of each wafer thickness measuring point to be processed according to the thickness value of each wafer thickness measuring point to be processed, the first target thickness value and the first thinning treatment compensation amount.
4. A method according to claim 3, characterized in that the method further comprises:
judging whether a wafer thickness measuring point to be processed with the absolute value of the final removal amount larger than a sixth target value exists or not;
if the absolute value of the final removal amount is larger than the thickness measuring point of the wafer to be processed of the sixth target value, determining that the wafer to be processed is a defective product;
and if the absolute value of the final removal quantity is not greater than the thickness measuring point of the wafer to be processed of the sixth target value, thinning the wafer to be processed according to the final removal quantity of each thickness measuring point of the wafer to be processed.
5. The method of claim 1, wherein the first thinning-out process compensation quantity is updated by:
calculating a difference between the thickness value of the target wafer and the first target thickness value;
calculating a second thinning process compensation amount according to the first thinning process compensation amount and a difference value between a thickness value of the target wafer and the first target thickness value based on an exponentially weighted average movement model;
the first thinning-out processing compensation quantity is deleted, and the second thinning-out processing compensation quantity is determined as the first thinning-out processing compensation quantity.
6. The method of claim 5, wherein the method further comprises:
judging whether the absolute value of the difference value between the second thinning processing compensation quantity and the first thinning processing compensation quantity is larger than a fifth target value;
and if the absolute value of the difference between the second thinning compensation quantity and the first thinning compensation quantity is larger than a fifth target value, stopping the operation of the thinning machine, and maintaining the offset of the thinning machine to reduce the offset of the thinning machine.
7. The method according to claim 1, wherein the method further comprises:
judging whether the absolute value of the updated first thinning processing compensation quantity is larger than a second target value;
and if the updated compensation amount of the first thinning treatment is larger than the second target value, stopping the operation of the thinning machine, and maintaining the offset of the thinning machine to reduce the offset of the thinning machine.
8. A wafer thinning processing apparatus, the apparatus comprising:
the data acquisition module is used for acquiring a thickness value of the wafer to be processed, a first target thickness value corresponding to the wafer to be processed and a first thinning treatment compensation quantity;
the machine file generation module is used for generating a machine file according to the thickness value of the wafer to be processed, the first target thickness value corresponding to the wafer to be processed and the first thinning treatment compensation quantity, and the machine file is used for indicating a thinning machine to carry out thinning processing on the wafer;
the thinning processing module is used for controlling the thinning machine to thin the wafer to be processed according to the machine file so as to obtain a target wafer;
and the first thinning treatment compensation quantity updating module is used for measuring the thickness of the target wafer and updating the first thinning treatment compensation quantity according to the thickness value of the target wafer and the first target thickness value.
9. An electronic device, comprising: a processor, a memory and a bus, the memory storing machine-readable instructions executable by the processor, the processor and the memory in communication over the bus when the electronic device is running, the processor executing the machine-readable instructions to perform the steps of the method of any one of claims 1 to 7.
10. A computer-readable storage medium, characterized in that it has stored thereon a computer program which, when executed by a processor, performs the steps of the method according to any of claims 1 to 7.
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| CN117532426A (en) * | 2023-11-01 | 2024-02-09 | 迈为技术(珠海)有限公司 | Grinding wheel tooth loss compensation method, device, equipment and storage medium |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117532426A (en) * | 2023-11-01 | 2024-02-09 | 迈为技术(珠海)有限公司 | Grinding wheel tooth loss compensation method, device, equipment and storage medium |
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