CN116113257A - Electrode, light-emitting diode, light-emitting module and electronic equipment - Google Patents
Electrode, light-emitting diode, light-emitting module and electronic equipment Download PDFInfo
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- CN116113257A CN116113257A CN202310087276.7A CN202310087276A CN116113257A CN 116113257 A CN116113257 A CN 116113257A CN 202310087276 A CN202310087276 A CN 202310087276A CN 116113257 A CN116113257 A CN 116113257A
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Abstract
The application provides an electrode, emitting diode, light emitting module and electronic equipment, the electrode is including second metal oxide layer, first conductive buffer layer, metal layer and the first metal oxide layer of laminating in proper order, first conductive buffer layer is used for the separation the metal layer atom to the migration of second metal oxide layer, consequently, can avoid because the transparency of second metal oxide layer that the atom migration of metal layer caused reduces by a wide margin, easily takes place short circuit, shows dark spot scheduling problem.
Description
Technical Field
The invention relates to an electrode, a light-emitting diode, a light-emitting module and electronic equipment, and belongs to the technical field of light-emitting display.
Background
In the panel display industry, top-emitting light emitting diodes typically use an ITO/Ag/ITO stack structure as the device anode. The ITO has the advantages of higher transparency, higher work function of 4.5eV, contribution to hole injection and improvement of luminous efficiency; the reflectivity of Ag in metal is highest, which is favorable for light reflection, further improves display brightness, has lower Ag resistance and reduces anode resistance.
However, the top-emission led may have problems such as shorting of the anode and cathode lines, display of dark spots, and reduced reflectivity in use.
Disclosure of Invention
The invention provides an electrode, a light-emitting diode, a light-emitting module and electronic equipment, which are used for solving the problems that in the prior art, a top light-emitting diode possibly has short circuit between an anode and a cathode circuit, display dark spots exist, reflectivity is reduced and the like.
The invention provides an electrode, which comprises a second metal oxide layer, a first conductive buffer layer, a metal layer and a first metal oxide layer which are sequentially laminated; the first conductive buffer layer is used for blocking migration of atoms of the metal layer to the second metal oxide layer.
The electrode as described above, optionally, the material of the first conductive buffer layer comprises a transparent material.
As with the electrode described above, optionally, the material of the first conductive buffer layer comprises graphene. An electrode as described above, optionally further comprising a total reflection structure; the total reflection structure is arranged between the metal layer and the second metal oxide layer and is used for carrying out total reflection on light emitted by the light-emitting functional layer.
The electrode as described above, optionally, the total reflection structure is disposed on a side of the first conductive buffer layer adjacent to the second metal oxide layer.
The electrode as described above, optionally, the total reflection structure comprises: an optically sparse medium layer and an optically dense medium layer; the optical dense medium layer is arranged on one side of the optical sparse medium layer, which is close to the second metal oxide.
An electrode as described above, optionally, the optical density medium layer having a refractive index greater than 4.1 and less than 4.5; the refractive index of the photophobic medium layer is more than 1.8 and less than 2.1.
The electrode as described above, optionally, the material of the photophobic medium layer comprises indium tin oxide; the material of the optical density medium layer comprises graphene.
The electrode as described above, optionally further comprising a second conductive buffer layer; the second conductive buffer layer is disposed between the metal layer and the first metal oxide layer.
The invention also provides a light emitting diode comprising an electrode as provided in any one of the above.
The invention also provides a light-emitting module comprising the light-emitting diode provided by any one of the above.
The invention also provides electronic equipment comprising the light-emitting module provided by any one of the above.
The electrode provided by the invention comprises the second metal oxide layer, the metal layer, the first conductive buffer layer and the first metal oxide layer which are sequentially stacked, wherein the first conductive buffer layer is used for blocking atoms of the metal layer from migrating to the second metal oxide layer, so that the problems that the transparency of the second metal oxide layer is greatly reduced, short circuit is easy to occur, dark spots are easy to display and the like due to the migration of the atoms of the metal layer can be avoided.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention. Furthermore, these drawings and the written description are not intended to limit the scope of the inventive concept in any way, but to illustrate the inventive concept to those skilled in the art by referring to the specific embodiments.
FIG. 1 is a schematic view of a portion of a light emitting diode according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a portion of a light emitting diode according to another embodiment of the present invention;
fig. 3 is a schematic view of a portion of a light emitting diode according to still another embodiment of the present invention.
Reference numerals illustrate:
1-an electrode;
11-a first metal oxide layer;
12-a metal layer;
13-a first conductive buffer layer;
14-a second metal oxide layer;
15-a total reflection layer;
151-an optical dense medium layer;
152-an optically lyophobic medium layer;
16-a first conductive buffer layer;
2-a light-emitting functional layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described in the following in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. The following embodiments and features of the embodiments may be combined with each other without conflict.
In the panel display industry, top-emitting light emitting diodes typically use an ITO/Ag/ITO (indium tin oxide/silver/indium tin oxide) laminate structure as the device anode. The ITO (indium tin oxide) has higher transparency and higher work function of 4.5eV, is beneficial to hole injection and improves luminous efficiency; ag (silver) has the highest reflectivity in metal, is favorable for light reflection, further improves display brightness, has lower Ag resistance, and reduces Anode (Anode) resistance.
However, in the use of the top-emission light-emitting diode, ag is easy to undergo electromigration and diffuse into the ITO, and oxygen in the ITO is easy to undergo oxidation reaction with Ag to generate black Ag2O, so that the resistance of the ITO is reduced, the work function is reduced, injection of device holes is not facilitated, the transparency of the ITO is greatly reduced, the luminous efficiency of the device is reduced, further, the Ag2O is black, the Ag reflectivity is seriously reduced, the luminous efficiency is affected, the volume of the Ag2O is large, and the anode and cathode lines are possibly shorted, so that the problem of dark point display is caused.
The invention provides an electrode, a light-emitting diode, a light-emitting module and electronic equipment, which are used for solving the problems that in the prior art, a top light-emitting diode possibly has short circuit between an anode and a cathode circuit, display dark spots exist, reflectivity is reduced and the like.
Exemplary electrode
Fig. 1 is a schematic structural view of an electrode according to an embodiment of the present invention, referring to fig. 1, in which an electrode 1 is located on one side of a light emitting functional layer 2, and the electrode 1 includes a second metal oxide layer 14, a first conductive buffer layer 13, a metal layer 12, and a first metal oxide layer 11 sequentially stacked in a direction away from the light emitting functional layer 2;
the first conductive buffer layer 13 serves to block atoms of the metal layer 12 from migrating toward the second metal oxide layer 14. Optionally, the atomic spacing of the first conductive buffer layer 13 is smaller than the atomic diameter of the metal layer 12.
In this way, the first conductive buffer layer 13 can block the atoms of the metal layer 12 from migrating to the second metal oxide layer 14, so that the transparency of the second metal oxide layer 14 is prevented from being reduced due to the migration of the atoms of the metal layer 12 to the second metal oxide layer 14, and the problems of reduced luminous efficiency, short circuit between the anode and the cathode lines, dark spots and the like can be avoided.
In the figures, the electrode 1 may be an anode of a light emitting diode, a cathode of the light emitting diode may be disposed on the same side of the light emitting functional layer 2 as the anode, and a cathode of the light emitting diode may be disposed on both sides of the light emitting functional layer 2 as the anode.
Further, since the first conductive buffer layer 13 is provided on the side of the metal layer 12 close to the light emitting function layer 2. If the light transmittance of the first conductive buffer layer 13 is too low, reflection of light by the metal layer 12 is affected, and the light emitting efficiency of the device is affected. Based on this, when selecting the material of the first conductive buffer layer 13, a material with high light transmittance should be selected, so that the material of the first conductive buffer layer 13 includes a transparent material, so as to improve the light transmittance of the first conductive buffer layer 13, and further improve the light emitting efficiency of the device.
In one embodiment, the material of the first metal oxide layer 11 includes: indium tin oxide; the material of the metal layer comprises: silver; the materials of the second metal oxide layer 14 include: indium tin oxide. The material of the first conductive buffer layer 13 includes: and (3) graphene.
It should be noted that graphene is not easy to react with indium tin oxide and silver chemically, and the atomic distance of graphene is only 0.142nm; the radius of Ag atoms is 0.144nm; based on the above, the graphene can avoid the influence of Ag atom migration on the reduction of the transmittance and work function of ITO, and improve the luminous efficiency. Further, graphene has excellent conductivity, and can reduce anode resistance. The graphene has good light transmittance, and the light transmittance reaches 97.7%. Based on this, using graphene, it is possible to avoid a decrease in light emitting efficiency of the light emitting diode due to the provision of the first conductive buffer layer 13.
In one embodiment, referring to fig. 2, in order that the electrode 1 may better reflect the light emitted from the light emitting functional layer 2, a total reflection structure 15 may be disposed between the metal layer 12 and the second metal oxide layer 14. The total reflection structure 15 is used for total reflection of light emitted from the light emitting functional layer 2. So arranged, the light emitted by the light-emitting functional layer 2 can be totally reflected by the total reflection structure 15 first, and the light passing through the total reflection structure 15 is reflected by the metal layer 12. Thus, the metal layer 12 and the total reflection structure 15 jointly reflect the light emitted by the light-emitting functional layer 2, so that the reflection effect of the electrode on the light emitted by the light-emitting functional layer 2 can be improved, and the light-emitting efficiency of the device can be improved.
Specifically, the total reflection structure 15 is a structure that reflects light by utilizing the phenomenon of total reflection of light; total reflection, also known as total internal reflection, is an optical phenomenon. When a ray enters a lower refractive index medium from a higher refractive index medium, the refracted ray will disappear if the angle of incidence is greater than the critical angle (the angle at which the ray is away from normal), and all incident rays will be reflected without entering a lower refractive index medium.
In practical application, the total reflection structure 15 includes: an optically lyophobic dielectric layer 152 and an optically dense dielectric layer 151; the light dense medium layer 151 is arranged on one side of the light sparse medium layer 152 close to the light emitting function layer 2; when the light emitted by the light emitting functional layer 2 is emitted to the light-thinning medium layer 152 through the light-thinning medium layer 151 at an incident angle larger than the critical angle, total reflection is formed at the junction of the light-thinning medium layer 152 and the light-thinning medium layer 151, and the light does not enter the light-thinning medium layer 152.
Specifically, the refractive index of the optical dense medium layer 151 is greater than 4.1 and less than 4.5; the refractive index of the photo-hydrophobic dielectric layer 152 is greater than 1.8 and less than 2.1.
In addition, when selecting the materials of the optical/hydrophobic medium layer 152 and the optical/dense medium layer 151, not only the refractive index of the material but also the conductivity of the material should be considered, and if the conductivity of the material is too poor, the electrical connection state between the metal layer 12 and the first metal oxide layer 11 should be affected, and therefore, a material having good conductivity should be selected. Meanwhile, in order to avoid the total reflection structure 15 blocking the light, the light transmittance of the materials needs to be considered when selecting the materials of the optical hydrophobic medium layer 152 and the optical dense medium layer 151.
In practical applications, the materials of the optical dense medium layer 151 may include: a graphene; the materials of the optical and hydrophobic medium layer 152 may include: indium tin oxide. Wherein, graphene has good conductivity and light transmittance, and the refractive index of graphene is generally 4.39. Further, indium tin oxide has good conductivity and light transmittance, while the refractive index of indium tin oxide is generally between 1.8 and 2.1. Based on this, the optically dense dielectric layer 151 was made of graphene, and the optically sparse dielectric layer 152 was made of indium tin oxide. At this time, the refractive index of the dense medium layer 151 is greater than that of the sparse medium layer 152, and a total reflection phenomenon occurs in a plane where the dense medium layer 151 and the sparse medium layer 152 contact, so that a portion of light emitted from the light emitting functional layer 2 is totally reflected.
Note that the materials of the optical and hydrophobic medium layer 152 may include: indium tin oxide; if the optical and hydrophobic medium layer 152 is attached to the metal layer 12, the indium tin oxide in the optical and hydrophobic medium layer 152 may react with metal atoms of the metal layer 12 to generate black Ag2O (silver oxide), which is unfavorable for light reflection, and may reduce the light emitting efficiency of the device.
In order to avoid this, when the material of the light-scattering medium layer 152 includes a material that is easily chemically reacted with the metal layer 12, the total reflection structure 15 may be disposed between the first conductive buffer layer 13 and the second metal oxide layer 14, so that the first conductive buffer layer 13 isolates the metal layer 12 from the light-scattering medium layer 152 "in the total reflection structure 15, and avoids the problems of atom migration and reaction between the metal layer 12 and the light-scattering medium layer 152" in the total reflection structure 15, reduced transparency caused by the reaction between the metal layer 12 and the light-scattering medium layer 152 "in the total reflection structure 15, reduced luminous efficiency of the device, short circuit between the anode and the cathode line, and dark spots.
Further, in practical applications, oxidation reaction may also occur between the metal layer 12 and the first metal oxide layer 11, affecting the performance of the electrode, and based on this, referring to fig. 3, a second conductive buffer layer 16 may be disposed between the metal layer 12 and the first metal oxide layer 11. The second conductive buffer layer 16 separates the metal layer 12 from the first metal oxide layer 11, and prevents oxidation of the metal layer 12 and the first metal oxide layer 11.
In particular, the material of the metal layer 12 may comprise silver; the material of the first metal oxide layer 11 may include silver tin oxide; the material of the second conductive buffer layer 16 may include graphene.
Exemplary light emitting diodes
The present embodiment provides a light emitting diode, referring to fig. 1, including: a light-emitting functional layer 2 and an electrode 1 located on one side of the light-emitting functional layer 2, the electrode 1 comprising an electrode provided by any one of the above exemplary electrodes. The electrode comprises a first metal oxide layer, a metal layer, a first conductive buffer layer and a second metal oxide layer which are sequentially laminated along a direction far away from the light-emitting functional layer; the first conductive buffer layer has an atomic distance smaller than an atomic diameter of the metal layer. Because the atomic distance of the first conductive buffer layer is smaller than the atomic diameter of the metal layer, atoms of the metal layer cannot pass through the first conductive buffer layer, metal electromigration of the atoms of the metal layer is avoided, and further the problems of transparency reduction, device luminous efficiency reduction, short circuit between an anode and a cathode circuit, dark spots and the like caused by metal electromigration of the atoms of the metal layer are prevented. Specifically, the material of the first conductive buffer layer includes a transparent material. The material of the first conductive buffer layer may include graphene.
Exemplary light emitting Module
The embodiment provides a light emitting module, the light emitting module includes: the light emitting diode provided by any one of the above exemplary light emitting diodes. So set up, the luminescent diode in this light-emitting module includes: the light-emitting device comprises a light-emitting functional layer and an electrode positioned on one side of the light-emitting functional layer, wherein the electrode comprises a first metal oxide layer, a metal layer, a first conductive buffer layer and a second metal oxide layer which are sequentially laminated along a direction far away from the light-emitting functional layer; the first conductive buffer layer has an atomic distance smaller than an atomic diameter of the metal layer. Because the atomic distance of the first conductive buffer layer is smaller than the atomic diameter of the metal layer, atoms of the metal layer cannot pass through the first conductive buffer layer, metal electromigration of the atoms of the metal layer is avoided, and further the problems of transparency reduction, device luminous efficiency reduction, short circuit between an anode and a cathode circuit, dark spots and the like caused by metal electromigration of the atoms of the metal layer are prevented. Specifically, the material of the first conductive buffer layer includes a transparent material. The material of the first conductive buffer layer may include graphene.
Exemplary electronic device
The present embodiment provides an electronic device including: the electronic device provided by any one of the above exemplary light emitting modules. So arranged, the light emitting diode of the electronic device includes: the light-emitting device comprises a light-emitting functional layer and an electrode positioned on one side of the light-emitting functional layer, wherein the electrode comprises a first metal oxide layer, a metal layer, a first conductive buffer layer and a second metal oxide layer which are sequentially laminated along a direction far away from the light-emitting functional layer; the first conductive buffer layer has an atomic distance smaller than an atomic diameter of the metal layer. Because the atomic distance of the first conductive buffer layer is smaller than the atomic diameter of the metal layer, atoms of the metal layer cannot pass through the first conductive buffer layer, metal electromigration of the atoms of the metal layer is avoided, and further the problems of transparency reduction, device luminous efficiency reduction, short circuit between an anode and a cathode circuit, dark spots and the like caused by metal electromigration of the atoms of the metal layer are prevented. Specifically, the material of the first conductive buffer layer includes a transparent material. The material of the first conductive buffer layer may include graphene.
In addition, in the present invention, unless explicitly specified and limited otherwise, the terms "connected," "stacked," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. An electrode, characterized in that the electrode comprises a second metal oxide layer, a first conductive buffer layer, a metal layer and a first metal oxide layer which are sequentially laminated;
the first conductive buffer layer is used for blocking migration of atoms of the metal layer to the second metal oxide layer.
2. The electrode of claim 1, wherein the material of the first conductive buffer layer comprises a transparent material;
optionally, the material of the first conductive buffer layer includes graphene.
3. The electrode of claim 1, wherein the electrode further comprises a total reflection structure;
the total reflection structure is arranged between the metal layer and the second metal oxide layer and is used for carrying out total reflection on light emitted by the light-emitting functional layer.
4. The electrode of claim 3, wherein the total reflection structure is disposed on a side of the first conductive buffer layer adjacent to the second metal oxide layer.
5. The electrode of claim 4, wherein the total reflection structure comprises: an optically sparse medium layer and an optically dense medium layer;
the optical dense medium layer is arranged on one side of the optical sparse medium layer, which is close to the second metal oxide; optionally, the refractive index of the optically dense medium layer is greater than 4.1 and less than 4.5; the refractive index of the photophobic medium layer is more than 1.8 and less than 2.1.
6. The electrode of claim 5, wherein the material of the photophobic dielectric layer comprises indium tin oxide;
the material of the optical density medium layer comprises graphene.
7. The electrode of claim 1, further comprising a second conductive buffer layer;
the second conductive buffer layer is disposed between the metal layer and the first metal oxide layer.
8. A light emitting diode comprising an electrode according to any one of claims 1 to 7.
9. A light emitting module comprising the light emitting diode according to any one of claims 1 to 8.
10. An electronic device comprising the light emitting module of claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310087276.7A CN116113257A (en) | 2023-02-08 | 2023-02-08 | Electrode, light-emitting diode, light-emitting module and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310087276.7A CN116113257A (en) | 2023-02-08 | 2023-02-08 | Electrode, light-emitting diode, light-emitting module and electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116113257A true CN116113257A (en) | 2023-05-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310087276.7A Pending CN116113257A (en) | 2023-02-08 | 2023-02-08 | Electrode, light-emitting diode, light-emitting module and electronic equipment |
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|---|---|
| CN (1) | CN116113257A (en) |
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- 2023-02-08 CN CN202310087276.7A patent/CN116113257A/en active Pending
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