CN116096216A - TES detector capable of realizing wide-band energy detection - Google Patents
TES detector capable of realizing wide-band energy detection Download PDFInfo
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- CN116096216A CN116096216A CN202211557700.1A CN202211557700A CN116096216A CN 116096216 A CN116096216 A CN 116096216A CN 202211557700 A CN202211557700 A CN 202211557700A CN 116096216 A CN116096216 A CN 116096216A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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Abstract
The application relates to a TES detector that can realize wide band energy detection, include: a heat sink; a TES main body arranged at the center of the heat sink; the heat conducting film is covered on the TES main body and provided with more than two branches; directly above the TES main body, the thickness is H through epoxy resin 6 The main absorber of the thick block-shaped superconductor material is directly adhered to the surface, and the front projection of the main absorber E towards the TES main body can cover the whole TES main body; one or more of a plurality of different sized absorbers are also included. The beneficial effects of the invention are as follows: can be compatible with various wave bands, and expands the application range of the TES detector.
Description
Technical Field
The application belongs to the technical field of superconducting transition edge detectors, and particularly relates to a TES detector capable of realizing wide-band energy detection.
Background
A superconducting Transition Edge detector (TES) is an extremely sensitive low-temperature superconducting detector, and utilizes the high sensitivity relationship of the film resistance to temperature in the superconducting phase Transition process to detect the energy of incident photons. The TES detector has energy resolution which is higher than that of a semiconductor by nearly two orders, has a wider energy response range and higher detection efficiency than that of a grating, can realize array by a multiplexing reading mode, and has a larger detection area, thereby being a space X-ray astronomical key development direction in the last ten years. Based on the ultra-high energy resolution of TES, TES detectors have been applied in material science research, nuclide fine structure measurement, and nuclear security detection, and become core detectors for future large space X-ray satellites (such as European ATHENA, japanese SuperDIOS, and China HUBS). The X-ray TES device is integrated into a material element characterization instrument, so that support is provided for material characterization and line width characterization level improvement, scientific and technical progress in the fields of materials, nano science and precise measurement is promoted, and metering service is provided for leading-edge researches of advanced light sources, space detection and the like which are being established and planned.
By combining different types of photon absorbers, the TES detector (including the absorber) can achieve detection in a wide band ranging from millimeter waves to X/gamma. The application fields of TES comprise electromagnetic wave spectrum sections such as microwaves, terahertz, infrared, visible light, X rays, gamma rays and the like. Especially in the X-ray field, TES has now been able to achieve energy resolution levels < 2eV@5.9keV. Most fields use highly integrated TES detector arrays.
At present, the TES detector in the prior art is applicable to a narrow wave band, and brings a plurality of inconveniences.
Disclosure of Invention
The invention aims to solve the technical problems that: in order to solve the defect that the band suitable for the TES detector in the prior art is narrower, the TES detector capable of realizing wide-band energy detection is provided.
The technical scheme adopted for solving the technical problems is as follows:
a TES detector for enabling wide band energy detection, comprising:
a heat sink;
a TES main body arranged at the center of the heat sink;
a heat conducting film which covers the TES main body and is provided with more than two branches;
the thickness of the TES main body is H through epoxy resin 6 A main absorber of a thick block-shaped superconductor material is directly adhered to the surface, and the front projection of the main absorber E towards the TES main body can cover the whole TES main body;
also included are one or more of the following absorbers:
a first absorber which is formed by magnetron sputtering or electroplating H 1 A thickness of a first thermally conductive material formed on the first branch;
a second absorber which is formed by magnetron sputtering or electroplating H 2 A thickness of a first thermally conductive material formed on the second branch;
a third absorber which is formed by magnetron sputtering or electroplating H 3 Thickness of first heat-conductive material +H 4 A thickness of a second thermally conductive material is formed on the third branch;
a fourth absorber of thickness H 5 Is bonded to the fourth branch by epoxy.
Preferably, the TES detector capable of realizing wide-band energy detection is provided, and the thick block-shaped superconductor material is Sn, ta, pb or In.
Preferably, the TES detector capable of realizing wide-band energy detection of the present invention, the first heat conducting material is a high atomic number metal, and the second heat conducting material is a high atomic number semi-metal.
Preferably, the TES detector capable of realizing wide-band energy detection is provided, wherein the metal with high atomic number is Au, and the semi-metal with high atomic number is Bi.
Preferably, in the TES detector capable of realizing wide-band energy detection, the first absorber, the second absorber, the third absorber and the fourth absorber are uniformly arranged around the TES main body.
Preferably, the TES detector capable of realizing wide-band energy detection of the invention is H 1 300-700 nm, H 2 1-3 μm, H 3 1-3 μm, H 4 5-100 μm, H 5 100-400 mu m, H 6 500-2000 μm.
Preferably, the TES detector capable of realizing wide-band energy detection of the present invention, the processing method of the TES main body is as follows: firstly, photoetching a TES pattern, depositing a Ti or Mo film with a certain thickness by vapor deposition or magnetron sputtering, and then continuously depositing an Au or Cu film with a certain thickness to form a double-layer film.
Preferably, the TES detector capable of realizing wide-band energy detection is characterized in that the heat conducting film is Au or epoxy resin.
Preferably, the TES detector capable of realizing wide-band energy detection of the present invention has a square block shape for the first absorber, the second absorber, the third absorber, the fourth absorber, and the main absorber E.
Preferably, the TES detector of the invention can realize wide-band energy detection,
the first absorber is capable of absorbing energy below 1 keV;
the second absorber is capable of absorbing energy below 10 keV;
the third absorber is capable of absorbing energy below 100 keV;
the fourth absorber is capable of absorbing energy below 500 keV;
the energy that the main absorber can absorb is above 500 keV.
The beneficial effects of the invention are as follows: can be compatible with various wave bands, and expands the application range of the TES detector.
Drawings
The technical scheme of the application is further described below with reference to the accompanying drawings and examples.
FIG. 1 is a top view of a TES detector structure that enables wide band energy detection in accordance with an embodiment of the present application;
FIG. 2 is a cross-sectional view A-A of FIG. 1;
fig. 3 is a B-B cross-sectional view of fig. 1.
The reference numerals in the figures are:
a first absorber A;
a second absorber B;
a third absorber C;
a fourth absorber D;
a main absorber E.
Detailed Description
It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other.
In the description of the present application, it should be understood that the terms "center," "longitudinal," "transverse," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, merely to facilitate description of the present application and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the scope of protection of the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature. In the description of the invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application can be understood by those of ordinary skill in the art in a specific context. In this embodiment, the directions X, Y, Z and X, Y, Z are all based on Cartesian coordinates.
The technical solutions of the present application will be described in detail below with reference to the accompanying drawings in combination with embodiments.
Examples
This embodiment provides a TES detector capable of realizing wide-band energy detection, as shown in fig. 1-3, including:
a heat sink;
a TES main body arranged at the center of the heat sink;
a heat conducting film which covers the TES main body and is provided with more than two branches;
the thickness of the TES main body is H through epoxy resin 6 A main absorber E of a bulk superconductor material directly bonded to the surface, the front projection of the main absorber E towards the TES body being capable of covering the entire TES body; the main absorber E is thickest and must be placed on top of the TES body because if the main absorber E is not thickest and shields the TES body when the low energy section rays are irradiated, the main absorber E directly irradiates the TES body and penetrates the TES body;
also included are one or more of the following absorbers:
a first absorber A formed by magnetron sputtering or electroplating H 1 A thickness of a first thermally conductive material formed on the first branch;
a second absorber B formed by magnetron sputtering or electroplating H 2 A thickness of a first thermally conductive material formed on the second branch;
a third absorber C formed by magnetron sputtering or electroplating H 3 Thickness of first heat-conductive material +H 4 A thickness of a second thermally conductive material is formed on the third branch;
the fourth absorber D has a thickness H 5 Is bonded to the fourth branch by epoxy.
As shown in fig. 2, the first absorber a is composed of 300 to 700nm Au by magnetron sputtering or electroplating, and is connected to the TES main body by an Au thermal connection structure. The third absorber C is formed by magnetron sputtering or electroplating 1-3 mu m Au+5-100 mu m Bi and is connected with the TES main body through an Au thermal connection structure. The main absorber E directly bonds 500-2000 μm thick bulk Sn or Ta to the TES surface by epoxy resin. Sn or Ta may be replaced by other superconductors (Pb, in, etc.), the material properties are strong cut-off for high energy radiation absorption, and thermalization is particularly rapid and complete. Au can be replaced with other high atomic number metals, typically using high atomic number (Z) elements as absorbers. The absorber should have both a high X-ray absorption cut-off capability, a low heat capacity and good heat conducting properties. Semi-metal Bi is widely used due to its high atomic number (z=83) and lower heat capacity. Au is also often used to make the absorber because of its high atomic number (z=79) and its lower heat capacity than ordinary metals.
As shown in fig. 3, the second absorber B is formed by magnetron sputtering or electroplating of 1 to 3 μm Au, and is connected to the TES main body through an Au thermal connection structure. The fourth absorber D is formed by bonding 100-400 mu m thick blocky Sn or Ta on the Au heat conduction layer through epoxy resin, and is connected with TES through an Au heat connection structure. Fourth absorber D: 1-3mm long and wide and 100-400 μm thick. Main absorber E: the length and width are 1-3mm, the thickness is 500-2000 μm, and the interval between the fourth absorber D and the main absorber E is 10-100 μm.
Preferably, in the TES detector capable of realizing wide-band energy detection of this embodiment, the first absorber a, the second absorber B, the third absorber C, and the fourth absorber D are uniformly arranged around the TES main body. The arrangement structure can uniformly disperse the absorbers to avoid interference errors.
Preferably, in the TES detector capable of realizing wide-band energy detection of this embodiment, the processing method of the TES main body is as follows: firstly, photoetching a TES pattern, depositing a Ti or Mo film with a certain thickness by vapor deposition or magnetron sputtering, and then continuously depositing an Au or Cu film with a certain thickness to form a double-layer film.
Preferably, in the TES detector capable of detecting energy in a wide band of wavelengths, the heat conducting film is Au or epoxy.
Preferably, in the TES detector capable of detecting energy in a wide band of wavelengths of the present embodiment, the first absorber a, the second absorber B, the third absorber C, the fourth absorber D, and the main absorber E are square blocks.
Preferably, the TES detector of the present embodiment can realize wide-band energy detection,
the energy that the first absorber A can absorb is 1keV or less;
the energy that the second absorber B can absorb is 10keV or less;
the energy that can be absorbed by the third absorber C is 100keV or less;
the fourth absorber D can absorb energy of 500keV or less;
the energy that the main absorber E can absorb is 500keV or more.
In this embodiment, the heat sink is made of (silicon+silicon oxide+silicon nitride), the TES body is made of (Ti/Au or Mo/Cu double-layer film or AlMn alloy), the electrode is made of (Nb or Al), and the electrode refers to a wire pressed on both sides of the TES body and a wire led out to the outside for connection to the voltage bias circuit. The thermal bonding structure is made of (Au or epoxy resin).
The working principle of the TES detector of this embodiment for detecting energy in different wave bands is as follows:
when TES detects photons, an absorber structure that specifically absorbs photons is required. The absorber needs to have a high stopping power, a low heat capacity and good thermalization properties.
During photon detection for energies below 1keV, the first absorber a may act as an absorber, with sufficient capacity to block photons, allowing the full deposition of photon energy on the film.
A second absorber B with a thicker film is used to detect this band of energy for photon detection between 1keV and 10 keV.
For photon detection at energies between 10keV and 100keV, it becomes less likely to rely on film absorption alone, electrodeposition can be used to grow 10-100 μm thick films for absorbing high energy photons. The third absorber C is used to detect this band of energy.
For high-energy photon detection with energies in the range of 100keV to 500keV, it is necessary to separately prepare a bulk absorber that can be coupled to the superconducting thin film TES. The fourth absorber D is used to detect this band of energy.
For high energy photon detection at energies above 500keV, it is necessary to separately prepare a thicker bulk absorber that can be coupled to the superconducting thin film TES. The main absorber E is used to detect this band of energy.
With the above-described preferred embodiments according to the present application as a teaching, the related workers can make various changes and modifications without departing from the scope of the technical idea of the present application. The technical scope of the present application is not limited to the contents of the specification, and must be determined according to the scope of claims.
Claims (10)
1. A TES detector for enabling wide band energy detection, comprising:
a heat sink;
a TES main body arranged at the center of the heat sink;
a heat conducting film which covers the TES main body and is provided with more than two branches;
the thickness of the TES main body is H through epoxy resin 6 A main absorber (E) of a bulk superconductor material directly bonded to the surface, the front projection of the main absorber E towards the TES body being capable of covering the entire TES body;
also included are one or more of the following absorbers:
a first absorber (A) which is sputtered or electroplated by means of a magnetron sputtering method 1 A thickness of a first thermally conductive material formed on the first branch;
a second absorber (B) which is sputtered or electroplated by magnetron sputtering H 2 A thickness of a first thermally conductive material formed on the second branch;
a third absorber (C) which is sputtered or electroplated by magnetron sputtering H 3 Thickness of first heat-conductive material +H 4 A thickness of a second thermally conductive material is formed on the third branch;
a fourth absorber (D) having a thickness H 5 Is bonded to the fourth branch by epoxy.
2. The TES detector for wide band energy detection of claim 1, wherein the bulk superconductor material is Sn, ta, pb, or In.
3. The TES detector for wide band energy detection of claim 1, wherein the first thermally conductive material is a high atomic number metal and the second thermally conductive material is a high atomic number semi-metal.
4. A TES detector for enabling broad band energy detection according to claim 3 wherein said high atomic number metal is Au and said high atomic number semi-metal is Bi.
5. The TES detector for wide band energy detection according to any of claims 1-4, wherein the first absorber (a), the second absorber (B), the third absorber (C), the fourth absorber (D) are evenly arranged around the TES body.
6. A TES detector for broad band energy detection as claimed in any one of claims 1 to 4 wherein H 1 300-700 nm, H 2 1-3 μm, H 3 1-3 μm, H 4 5-100 μm, H 5 100-400 mu m, H 6 500-2000 μm.
7. The TES detector for broad band energy detection as in any one of claims 1-4, wherein the TES body is fabricated by a method comprising: firstly, photoetching a TES pattern, depositing a Ti or Mo film with a certain thickness by vapor deposition or magnetron sputtering, and then continuously depositing an Au or Cu film with a certain thickness to form a double-layer film.
8. The TES detector for wide band energy detection of any of claims 1-4, wherein the thermally conductive film is Au or epoxy.
9. The TES detector for wide band energy detection according to any one of claims 1 to 4, wherein the first absorber (a), the second absorber (B), the third absorber (C), the fourth absorber (D) and the main absorber E are each square block-shaped.
10. A TES detector for wide band energy detection as claimed in any one of claims 1-4 wherein,
the energy that the first absorber (A) can absorb is 1keV or less;
the energy that the second absorber (B) can absorb is 10keV or less;
the energy absorbable by the third absorber (C) is 100keV or less;
the fourth absorber (D) can absorb energy below 500 keV;
the energy that the main absorber (E) can absorb is 500keV or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211557700.1A CN116096216A (en) | 2022-12-06 | 2022-12-06 | TES detector capable of realizing wide-band energy detection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211557700.1A CN116096216A (en) | 2022-12-06 | 2022-12-06 | TES detector capable of realizing wide-band energy detection |
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| Publication Number | Publication Date |
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| CN116096216A true CN116096216A (en) | 2023-05-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202211557700.1A Pending CN116096216A (en) | 2022-12-06 | 2022-12-06 | TES detector capable of realizing wide-band energy detection |
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- 2022-12-06 CN CN202211557700.1A patent/CN116096216A/en active Pending
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