CN116094461A - Device performance analysis method and system for thin film photovoltaic module - Google Patents
Device performance analysis method and system for thin film photovoltaic module Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 86
- 238000004458 analytical method Methods 0.000 title claims abstract description 33
- 238000005286 illumination Methods 0.000 claims abstract description 36
- 238000012360 testing method Methods 0.000 claims abstract description 21
- 239000010408 film Substances 0.000 claims description 15
- 238000004088 simulation Methods 0.000 claims description 13
- 229910052724 xenon Inorganic materials 0.000 claims description 12
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 9
- 238000004364 calculation method Methods 0.000 claims description 5
- 230000006798 recombination Effects 0.000 abstract description 11
- 238000005215 recombination Methods 0.000 abstract description 9
- 230000007774 longterm Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 230000007246 mechanism Effects 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 3
- 239000000969 carrier Substances 0.000 abstract description 2
- 230000006872 improvement Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1582—Buck-boost converters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a device performance analysis method and a device performance analysis system for a thin film photovoltaic module, which are applied to the technical field of photovoltaic module testing, wherein the method comprises the following steps: s1, providing illumination and dark state testing environments for the thin film photovoltaic module, S2, respectively collecting IV data of the thin film photovoltaic module in the illumination and dark state, S3, converting the IV data of the thin film photovoltaic module into JV data of a single photovoltaic device, and S4, analyzing the performance of the thin film photovoltaic module based on the JV data of the single photovoltaic device. According to the invention, three-quadrant IV data of the photovoltaic module are converted into JV data of a single device, and the change of a main recombination mechanism of microscopic current carriers of the battery under long-term service of the battery can be tracked, so that the internal mechanism of the device with the declining long-term efficiency of the module is further understood, the long-term service performance of the module is monitored, and basic data is provided for the improvement of the module production process.
Description
Technical Field
The invention relates to the technical field of photovoltaic module testing, in particular to a device performance analysis method and system of a thin film photovoltaic module.
Background
In general, when a photovoltaic module leaves a factory, an IV curve test is required to determine whether the electrical performance of the module is normal or not and the power level, the IV curve test can measure parameters such as open-circuit voltage, short-circuit current and the like, can identify defects or shading and other problems of the photovoltaic module/array, is used for calculation of dust accumulation loss, temperature rise loss, power attenuation and series-parallel connection adaptation loss, and has important significance for stable operation of the photovoltaic module in a photovoltaic power station. At present, the existing test method for the performance of the thin film component and the thin film battery device only can macroscopically reflect the electrical characteristics of the component by evaluating the open-circuit voltage and the short-circuit current, so that whether the performance of the photovoltaic component has a problem or not is evaluated on the whole, the component cannot be subjected to deeper performance analysis and evaluation, and the performance degradation reason of the component cannot be obtained by the existing IV test.
Therefore, it is a problem that needs to be solved by those skilled in the art how to provide a performance analysis method that can further analyze the photovoltaic module and track the cause of the performance change.
Disclosure of Invention
In view of the above, the invention provides a device performance analysis method and system for a thin film photovoltaic module, which can further analyze the microcompositions of solar cell devices by performing deeper performance analysis and evaluation on the photovoltaic module through IV testing of three quadrants.
In order to achieve the above object, the present invention provides the following technical solutions:
a device performance analysis method of a thin film photovoltaic module comprises the following steps:
s1, providing illumination and dark state test environments for a thin film photovoltaic module;
s2, respectively acquiring IV data of the thin film photovoltaic module in the illumination state and the dark state;
s3, converting IV data of the thin film photovoltaic module into JV data of a single photovoltaic device;
s4, analyzing the performance of the thin film photovoltaic module based on JV data of a single photovoltaic device.
Optionally, S1 is specifically:
placing the film photovoltaic module in an environment simulation box, arranging a xenon lamp light source in the environment simulation box, and closing the xenon lamp light source to provide a dark state test environment for the film photovoltaic module; switching on a xenon lamp light source to provide an illumination test environment for the thin film photovoltaic module; the illumination intensity of the xenon lamp light source is adjusted, and different illumination conditions are provided for the film photovoltaic module.
Optionally, IV data acquisition of S2 is:
s21, accessing a data acquisition circuit for the thin film photovoltaic module;
s22, applying reverse voltage to the thin film photovoltaic module, adjusting a voltage value, and reading a corresponding second quadrant current;
s23, applying forward voltage to the thin film photovoltaic module, gradually increasing the forward voltage from zero to the open circuit voltage of the module, and reading the corresponding first quadrant current and fourth quadrant current.
Optionally, the data acquisition circuit in the S2 is a series-parallel type Buck-Boost converter, an output end of the series-parallel type Buck-Boost converter is connected with the thin film photovoltaic module, and the series-parallel type Buck-Boost converter provides reverse voltage and forward voltage for the thin film photovoltaic module.
Optionally, S3 is specifically:
s31, obtaining the serial connection and parallel connection relation of single photovoltaic devices in the thin film photovoltaic module;
s32, calculating IV data of a single photovoltaic device in the illumination and dark state based on the IV data of the thin film photovoltaic module in the illumination and dark state;
and S33, converting IV data of the single photovoltaic device in the illumination and dark state into JV data.
Optionally, in S4, the open-circuit voltage, the short-circuit current density, the filling factor, the efficiency, the series resistance and the shunt resistance of the thin film photovoltaic module are obtained by calculating JV data of a single photovoltaic device, and the diode management factor of the single photovoltaic device is obtained.
The invention also discloses a device performance analysis system of the thin film photovoltaic module, which comprises: the system comprises an environment simulation module, a data acquisition module, a data processing module and a performance analysis module;
the environment simulation module is connected with the data acquisition module and used for providing two test environments of illumination and dark state for the thin film photovoltaic module;
the data acquisition module is connected with the data processing module and used for acquiring IV data of the thin film photovoltaic module in the illumination and dark state;
the data processing module is connected with the performance analysis module and used for converting IV data of the thin film photovoltaic module into JV data of a single photovoltaic device;
and the performance analysis module is used for analyzing the performance of the thin film photovoltaic component based on JV data of the single photovoltaic device.
Compared with the prior art, the invention discloses a device performance analysis method and a device performance analysis system for a thin film photovoltaic module, which have the following beneficial effects: the three-quadrant IV data of the photovoltaic module are converted into JV data of a single device, and the change of a main composite mechanism of microscopic current carriers of the battery under long-term service of the battery can be tracked, so that the internal mechanism of the device with the long-term efficiency of the module is further understood, the long-term service performance of the module is monitored, and basic data is provided for the improvement of the production process of the module; the data acquisition circuit selects the series-parallel type Buck-Boost converter, so that the regulation precision of the output voltage can be ensured, and the data acquisition circuit has better dynamic characteristics.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a performance evaluation method of the present invention;
FIG. 2 is a graph of IV of a thin film photovoltaic module according to an embodiment of the present invention;
FIG. 3 is a diagram of a topology of a data acquisition circuit of the present invention;
FIG. 4 is a JV graph of a single photovoltaic device in an embodiment of the present invention;
FIG. 5 is a graph of data calculation results in an embodiment of the present invention, wherein 5.1 is a JV graph of a single photovoltaic device in the light and dark state, 5.2 is a g (V) graph of a single photovoltaic device, 5.3 is an r (J) graph of a single photovoltaic device, and 5.4 is a diode graph of a single photovoltaic device;
fig. 6 is a schematic diagram of a performance evaluation system according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The embodiment of the invention discloses a device performance analysis method of a thin film photovoltaic module, which is shown in fig. 1 and comprises the following steps:
s1, providing illumination and dark state test environments for a thin film photovoltaic module;
s2, respectively acquiring IV data of the thin film photovoltaic module in the illumination state and the dark state;
s3, converting IV data of the thin film photovoltaic module into JV data of a single photovoltaic device;
s4, analyzing the performance of the thin film photovoltaic module based on JV data of a single photovoltaic device.
Wherein the IV data is current and voltage data and the JV data is current density and voltage data.
Further, S1 is specifically:
placing the film photovoltaic module in an environment simulation box, arranging a xenon lamp light source in the environment simulation box, and closing the xenon lamp light source to provide a dark state test environment for the film photovoltaic module; switching on a xenon lamp light source to provide an illumination test environment for the thin film photovoltaic module; the illumination intensity of the xenon lamp light source is adjusted, and different illumination conditions are provided for the film photovoltaic module.
Further, the temperature in the environmental simulation tank was fixed at 66.5 ℃.
Further, IV data acquisition of S2 is:
s21, accessing a data acquisition circuit for the thin film photovoltaic module;
s22, applying reverse voltage to the thin film photovoltaic module, adjusting a voltage value, and reading a corresponding second quadrant current;
s23, applying forward voltage to the thin film photovoltaic module, gradually increasing the forward voltage from zero to the open circuit voltage of the module, and reading the corresponding first quadrant current and fourth quadrant current.
Further, the IV data test results of the thin film photovoltaic module are shown in FIG. 2, wherein G is 960W/m respectively 2 、820W/m 2 、650W/m 2 、0W/m 2 IV data for the thin film photovoltaic module were tested.
Further, the data acquisition circuit in the S2 is a series-parallel type Buck-Boost converter, the circuit topology diagram of the series-parallel type Buck-Boost converter is shown in fig. 3, the output end of the series-parallel type Buck-Boost converter is connected with the thin film photovoltaic module, and the series-parallel type Buck-Boost converter provides reverse voltage and forward voltage for the thin film photovoltaic module.
Furthermore, the converter is input into other film photovoltaic modules or storage batteries, the output is connected into the tested film photovoltaic module, the tested film photovoltaic module is in a power generation state in one-quadrant data test, and when the positive bias voltage is added into the tested film photovoltaic module, the energy generated by the tested film photovoltaic module is returned. In order to realize stable, continuous, smooth and adjustable output voltage of the converter, an analog load is added at the output end of the converter. When the tested component carries out energy loopback, the loopback energy is consumed in the analog load while the stable output of the converter voltage is ensured. The converter main circuit is composed of 3 MOSFETs (S1, S2, S3), 3 fast recovery diodes (D1, D2, D3), two energy storage elements (L1, L2) and two output capacitors (C1, C2).
Further, S3 is specifically:
s31, obtaining the serial connection and parallel connection relation of single photovoltaic devices in the thin film photovoltaic module;
s32, calculating IV data of a single photovoltaic device in the illumination and dark state based on the IV data of the thin film photovoltaic module in the illumination and dark state;
and S33, converting IV data of the single photovoltaic device in the illumination and dark state into JV data.
Further, the thin film photovoltaic module is formed by a plurality of photovoltaic devices in a serial-parallel connection mode, and voltage and current data of the single photovoltaic device are calculated according to the serial-parallel connection mode of the photovoltaic devices, so that IV data of the thin film photovoltaic module are converted into JV data of the single photovoltaic device, and the conversion result is shown in fig. 4.
Further, in the step S4, calculation is performed through JV data of a single photovoltaic device, so that an open-circuit voltage, a short-circuit current density, a filling factor, efficiency, a series resistance and a shunt resistance of the thin film photovoltaic module are obtained, and a diode management factor of the single photovoltaic device is obtained.
Further, JV data of the individual photovoltaic modules were input into the analysis software at g=820W/m 2 As an illumination environment, g=0W/m 2 As an example of the dark state environment, the calculation result is shown in fig. 5.
FIG. 5.1 is a graph of JV for a single photovoltaic device in both illuminated and dark states, from which the intercept of the illuminated JV curve to voltage V can be found at G=820W/m 2 Under the illumination condition of (1), the open-circuit voltage V of a single photovoltaic device in the film photovoltaic module OC =763 mV, short-circuit current density J SC ＝19.39mA/cm 2 Fill factor ff= 64.41%, efficiency η=10.32%. The slope of the JV curve in the dark state is lower than that of the illumination JV curve, and the cross point exists in the light-dark JV curve, which indicates that a charged recombination center exists in the thin film photovoltaic device, so that the photoconductivity of the thin film photovoltaic component is higher than that of the dark conductivity under high forward bias. According to fig. 5.2 and 5.3, the series resistance R of the thin film photovoltaic module under illumination can be obtained s ＝3.24Ω·cm 2 Shunt resistor R sh ＝2310.81Ω·cm 2 Series resistor R s Below 5 Ω cm 2 Belongs to the normal range, shunt resistor R sh The numerical value is higher than 10001Ω cm 2 It is shown that the thin film photovoltaic module has no weak diode conductive path, so that the internal loss of module power generation does not cause the output power to be reduced. By monitoring the three-quadrant JV curves of the thin film photovoltaic module, the open-circuit voltage V can be obtained OC Short-circuit current density J SC Fill factor FF, efficiency η, series resistance R s Shunt resistor R sh And obtaining the working performance of the device in real time.
As shown in fig. 5.4, by plotting the current density against bias voltage in a logarithmic scale by the JV curve, the diode ideality factor a for a single photovoltaic device can be calculated from the slope, in this example a=2.33. For an ideal pn junction, a=1, where there is no recombination in the pn junction depletion region of the device; when 1< A <2, a recombination center exists only in the diffusion region outside the depletion region; when 1< A <2 and A approaches 2, recombination of the depletion region is dominant, a large number of recombination centers exist in the depletion region of the pn junction, and the junction region quality of the battery starts to be degraded; when a >2, it is stated that in addition to depletion region recombination, there is also interfacial recombination, tunneling layer recombination, of the device also begins to participate in recombination, that is, there is also a high defect density recombination region at each interface of the device. The analysis of fig. 5 illustrates that performance degradation has occurred in the thin film photovoltaic module of this example.
Corresponding to the method shown in fig. 1, the embodiment of the invention also provides a device performance analysis system of the thin film photovoltaic module, which is used for implementing the method shown in fig. 1, and the schematic diagram is shown in fig. 6, and includes: the system comprises an environment simulation module, a data acquisition module, a data processing module and a performance analysis module;
the environment simulation module is connected with the data acquisition module and used for providing two test environments of illumination and dark state for the thin film photovoltaic module;
the data acquisition module is connected with the data processing module and used for acquiring IV data of the thin film photovoltaic module in the illumination and dark state;
the data processing module is connected with the performance analysis module and used for converting IV data of the thin film photovoltaic module into JV data of a single photovoltaic device;
and the performance analysis module is used for analyzing the performance of the thin film photovoltaic component based on JV data of the single photovoltaic device.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. The device performance analysis method of the thin film photovoltaic module is characterized by comprising the following steps of:
s1, providing illumination and dark state test environments for a thin film photovoltaic module;
s2, respectively acquiring IV data of the thin film photovoltaic module in the illumination state and the dark state;
s3, converting IV data of the thin film photovoltaic module into JV data of a single photovoltaic device;
s4, analyzing the performance of the thin film photovoltaic module based on JV data of a single photovoltaic device.
2. The device performance analysis method of a thin film photovoltaic module according to claim 1, wherein S1 specifically comprises:
placing the film photovoltaic module in an environment simulation box, arranging a xenon lamp light source in the environment simulation box, and closing the xenon lamp light source to provide a dark state test environment for the film photovoltaic module; switching on a xenon lamp light source to provide an illumination test environment for the thin film photovoltaic module; the illumination intensity of the xenon lamp light source is adjusted, and different illumination conditions are provided for the film photovoltaic module.
3. The device performance analysis method of a thin film photovoltaic module according to claim 1, wherein IV data acquisition of S2 is:
s21, accessing a data acquisition circuit for the thin film photovoltaic module;
s22, applying reverse voltage to the thin film photovoltaic module, adjusting a voltage value, and reading a corresponding second quadrant current;
s23, applying forward voltage to the thin film photovoltaic module, gradually increasing the forward voltage from zero to the open circuit voltage of the module, and reading the corresponding first quadrant current and fourth quadrant current.
4. The device performance analysis method of the thin film photovoltaic module according to claim 3, wherein the data acquisition circuit in the S2 is a series-parallel type Buck-Boost converter, an output end of the series-parallel type Buck-Boost converter is connected with the thin film photovoltaic module, and the series-parallel type Buck-Boost converter provides reverse voltage and forward voltage for the thin film photovoltaic module.
5. The device performance analysis method of a thin film photovoltaic module according to claim 1, wherein S3 specifically comprises:
s31, obtaining the serial connection and parallel connection relation of single photovoltaic devices in the thin film photovoltaic module;
s32, calculating IV data of a single photovoltaic device in the illumination and dark state based on the IV data of the thin film photovoltaic module in the illumination and dark state;
and S33, converting IV data of the single photovoltaic device in the illumination and dark state into JV data.
6. The device performance analysis method of the thin film photovoltaic module according to claim 1, wherein in the step S4, calculation is performed through JV data of a single photovoltaic device, so as to obtain an open-circuit voltage, a short-circuit current density, a filling factor, efficiency, a series resistance and a shunt resistance of the thin film photovoltaic module, and diode management factors of the single photovoltaic device are obtained.
7. A device performance analysis system of a thin film photovoltaic module, applying the device performance analysis method of a thin film photovoltaic module according to any one of claims 1 to 6, comprising: the system comprises an environment simulation module, a data acquisition module, a data processing module and a performance analysis module;
the environment simulation module is connected with the data acquisition module and used for providing two test environments of illumination and dark state for the thin film photovoltaic module;
the data acquisition module is connected with the data processing module and used for acquiring IV data of the thin film photovoltaic module in the illumination and dark state;
the data processing module is connected with the performance analysis module and used for converting IV data of the thin film photovoltaic module into JV data of a single photovoltaic device;
and the performance analysis module is used for analyzing the performance of the thin film photovoltaic component based on JV data of the single photovoltaic device.
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