CN116094349A - I-type and T-type three-level ACDC circuit, bidirectional power supply and electrical device - Google Patents

I-type and T-type three-level ACDC circuit, bidirectional power supply and electrical device Download PDF

Info

Publication number
CN116094349A
CN116094349A CN202310373172.2A CN202310373172A CN116094349A CN 116094349 A CN116094349 A CN 116094349A CN 202310373172 A CN202310373172 A CN 202310373172A CN 116094349 A CN116094349 A CN 116094349A
Authority
CN
China
Prior art keywords
phase
level
type
inductor
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310373172.2A
Other languages
Chinese (zh)
Inventor
彭小超
徐志财
张尕虎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Kangweite Electric Co ltd
Original Assignee
Shenzhen Kangweite Electric Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Kangweite Electric Co ltd filed Critical Shenzhen Kangweite Electric Co ltd
Priority to CN202310373172.2A priority Critical patent/CN116094349A/en
Publication of CN116094349A publication Critical patent/CN116094349A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/12—Arrangements for reducing harmonics from ac input or output
    • H02M1/126—Arrangements for reducing harmonics from ac input or output using passive filters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/66—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal
    • H02M7/68—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters
    • H02M7/72—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/79—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/797—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

Abstract

The invention provides an I-type and T-type three-level ACDC circuit, a bidirectional power supply and an electrical device, wherein the I-type three-level ACDC circuit comprises: the positive ends of the I-type three-level A1 phase, the I-type three-level A2 phase, the I-type three-level B1 phase, the I-type three-level B2 phase, the I-type three-level C1 phase and the I-type three-level C2 phase are all connected with the positive electrode of the direct current side, the negative ends are all connected with the negative electrode of the direct current side, and the midpoint ends are all connected with the midpoint; the alternating current side inductance ends of the I-type three-level A1 phase and the I-type three-level A2 phase are respectively connected with the second end and the third end of the first filtering module, the alternating current side inductance ends of the I-type three-level B1 phase and the I-type three-level B2 phase are respectively connected with the second end and the third end of the second filtering module, and the alternating current side inductance ends of the I-type three-level C1 phase and the I-type three-level C2 phase are respectively connected with the second end and the third end of the third filtering module.

Description

I-type and T-type three-level ACDC circuit, bidirectional power supply and electrical device
Technical Field
The invention belongs to the technical field of power electronics, and particularly relates to an I-type and T-type three-level ACDC circuit, a bidirectional power supply and an electrical device.
Background
The three-level circuit is widely applied to ACDC rectification or inversion circuits due to high efficiency, small voltage stress of power devices and small volume of inversion inductors. In the application scene with larger power, three-phase conventional I-type or T-type three-level circuits are adopted to be connected in parallel, and each phase of I-type or T-type three-level circuit is connected with an alternating current side through a filtering inductor. The scheme has the problems that the direct current ripple current is large, the alternating current side ripple current is also large, and a large-capacity filter capacitor and a large-inductance filter inductor are needed. Therefore, the filter capacitor on the direct current side has larger volume, serious heat and damage, and reduces the reliability of the power supply product.
Disclosure of Invention
The embodiment of the invention provides an I-type three-level ACDC circuit, which aims to solve the problems that a filter capacitor on a direct current side is large in size, serious in heating and easy to damage.
The embodiment of the invention is realized in such a way that an I-type three-level ACDC circuit comprises:
the positive electrode of the first capacitor is connected with the positive electrode of the direct current side, the negative electrode of the first capacitor is connected with the positive electrode of the second capacitor, the negative electrode of the second capacitor is connected with the negative electrode of the direct current side, and the connecting point of the first capacitor and the second capacitor is a midpoint;
the positive ends of the I-type three-level A1 phase, the I-type three-level A2 phase, the I-type three-level B1 phase, the I-type three-level B2 phase, the I-type three-level C1 phase and the I-type three-level C2 phase are respectively provided with a positive end, a negative end, a midpoint end and an alternating current side inductance end, the positive ends of the I-type three-level A1 phase, the I-type three-level A2 phase, the I-type three-level B1 phase, the I-type three-level B2 phase, the I-type three-level C1 phase and the I-type three-level C2 phase are respectively connected with the positive electrode of the direct current side, the negative end is respectively connected with the negative electrode of the direct current side, and the midpoint end is respectively connected with the midpoint;
the first end of the first filtering module is respectively connected with one end of the power grid A phase and one end of the third capacitor, the second end of the first filtering module is connected with the alternating current side inductance end of the I-type three-level A1 phase, and the third end of the first filtering module is connected with the alternating current side inductance end of the I-type three-level A2 phase;
The first end of the second filtering module is respectively connected with one end of the power grid B phase and one end of the fourth capacitor, the second end of the second filtering module is connected with the alternating current side inductance end of the I-type three-level B1 phase, and the third end of the second filtering module is connected with the alternating current side inductance end of the I-type three-level B2 phase; and
the first end of the third filtering module is respectively connected with one end of the power grid C phase and one end of the fifth capacitor, the second end of the third filtering module is connected with the alternating current side inductance end of the I-type three-level C1 phase, and the third end of the third filtering module is connected with the alternating current side inductance end of the I-type three-level C2 phase;
and the other ends of the power grid A phase, the power grid B phase, the power grid C phase, the third capacitor, the fourth capacitor and the fifth capacitor are all connected with the midpoint.
Further, the first filtering module comprises a first inductor and a second inductor, one end of the first inductor is connected with an alternating current side inductor end of the I-type three-level A1 phase, one end of the second inductor is connected with an alternating current side inductor end of the I-type three-level A2 phase, and the other end of the first inductor is connected with the other end of the second inductor in parallel;
the first inductor and the second inductor are magnetic coupling inductors or independent inductors, and the number of turns of the first inductor and the number of turns of the second inductor are equal to the inductance;
The second filtering module comprises a third inductor and a fourth inductor, one end of the third inductor is connected with an alternating current side inductor end of the I-type three-level B1 phase, one end of the fourth inductor is connected with an alternating current side inductor end of the I-type three-level B2 phase, and the other end of the third inductor is connected with the other end of the fourth inductor in parallel;
the third inductor and the fourth inductor are magnetic coupling inductors or independent inductors, and the turns and the inductance of the third inductor and the fourth inductor are equal;
the third filtering module comprises a fifth inductor and a sixth inductor, one end of the fifth inductor is connected with an alternating current side inductor end of the I-type three-level C1 phase, one end of the sixth inductor is connected with an alternating current side inductor end of the I-type three-level C2 phase, and the other end of the fifth inductor is connected with the other end of the sixth inductor in parallel;
the fifth inductor and the sixth inductor are magnetic coupling inductors or independent inductors, and the turns and the inductance of the fifth inductor and the sixth inductor are equal.
Further, the circuit structures of the I-type three-level A1 phase, the I-type three-level A2 phase, the I-type three-level B1 phase, the I-type three-level B2 phase, the I-type three-level C1 phase and the I-type three-level C2 phase are the same;
The I-type three-level A1 phase comprises a first IGBT, a second IGBT, a third IGBT, a fourth IGBT, a first diode, a second diode, a third diode, a fourth diode, a fifth diode and a sixth diode, wherein the collector electrode of the first IGBT is connected with the positive electrode of the direct current side and the negative electrode of the first diode, the emitter electrode of the first IGBT is respectively connected with the positive electrode of the first diode, the collector electrode of the second IGBT, the negative electrode of the second diode and the negative electrode of the fifth diode, the positive electrode of the fifth diode is respectively connected with the negative electrode of the sixth diode and the middle point, the emitter electrode of the second IGBT is respectively connected with the positive electrode of the second diode, the negative electrode of the third diode and the second end of the first filter module, and the emitter electrode of the third IGBT is respectively connected with the positive electrode of the third diode, the negative electrode of the fourth IGBT, the negative electrode of the fourth diode and the positive electrode of the fourth diode are respectively connected with the positive electrode of the fourth diode and the negative electrode of the fourth diode.
A T-type three-level ACDC circuit comprising:
The positive electrode of the first capacitor is connected with the positive electrode of the direct current side, the negative electrode of the first capacitor is connected with the positive electrode of the second capacitor, the negative electrode of the second capacitor is connected with the negative electrode of the direct current side, and the connecting point of the first capacitor and the second capacitor is a midpoint;
the T-type three-level A1 phase, the T-type three-level A2 phase, the T-type three-level B1 phase, the T-type three-level B2 phase, the T-type three-level C1 phase and the T-type three-level C2 phase are respectively provided with a positive electrode terminal, a negative electrode terminal, a middle point terminal and an alternating current side inductance terminal, the positive electrodes of the T-type three-level A1 phase, the T-type three-level A2 phase, the T-type three-level B1 phase, the T-type three-level B2 phase, the T-type three-level C1 phase and the T-type three-level C2 phase are respectively connected with the positive electrode of the direct current side, the negative electrode terminal is respectively connected with the negative electrode of the direct current side, and the middle point terminal is respectively connected with the middle point;
the first end of the first filtering module is respectively connected with one end of the power grid A phase and one end of the third capacitor, the second end of the first filtering module is connected with the alternating current side inductance end of the T-shaped three-level A1 phase, and the third end of the first filtering module is connected with the alternating current side inductance end of the T-shaped three-level A2 phase;
the first end of the second filtering module is respectively connected with one end of the power grid B phase and one end of the fourth capacitor, the second end of the second filtering module is connected with the alternating current side inductance end of the T-shaped three-level B1 phase, and the third end of the second filtering module is connected with the alternating current side inductance end of the T-shaped three-level B2 phase; and
The first end of the third filtering module is respectively connected with one end of the power grid C phase and one end of the fifth capacitor, the second end of the third filtering module is connected with the alternating current side inductance end of the T-shaped three-level C1 phase, and the third end of the third filtering module is connected with the alternating current side inductance end of the T-shaped three-level C2 phase;
and the other ends of the power grid A phase, the power grid B phase, the power grid C phase, the third capacitor, the fourth capacitor and the fifth capacitor are all connected with the midpoint.
Further, the first filtering module comprises a first inductor and a second inductor, one end of the first inductor is connected with an alternating current side inductor end of the T-shaped three-level A1 phase, one end of the second inductor is connected with an alternating current side inductor end of the T-shaped three-level A2 phase, and the other end of the first inductor is connected with the other end of the second inductor in parallel;
the first inductor and the second inductor are magnetic coupling inductors or independent inductors, and the number of turns of the first inductor and the number of turns of the second inductor are equal to the inductance;
the second filtering module comprises a third inductor and a fourth inductor, one end of the third inductor is connected with an alternating current side inductor end of the T-shaped three-level B1 phase, one end of the fourth inductor is connected with an alternating current side inductor end of the T-shaped three-level B2 phase, and the other end of the third inductor is connected with the other end of the fourth inductor in parallel;
The third inductor and the fourth inductor are magnetic coupling inductors or independent inductors, and the turns and the inductance of the third inductor and the fourth inductor are equal;
the third filtering module comprises a fifth inductor and a sixth inductor, one end of the fifth inductor is connected with an alternating current side inductor end of the T-shaped three-level C1 phase, one end of the sixth inductor is connected with an alternating current side inductor end of the T-shaped three-level C2 phase, and the other end of the fifth inductor is connected with the other end of the sixth inductor in parallel;
the fifth inductor and the sixth inductor are magnetic coupling inductors or independent inductors, and the turns and the inductance of the fifth inductor and the sixth inductor are equal.
Further, the circuit structures of the T-shaped three-level A1 phase, the T-shaped three-level A2 phase, the T-shaped three-level B1 phase, the T-shaped three-level B2 phase, the T-shaped three-level C1 phase and the T-shaped three-level C2 phase are the same;
the T-shaped three-level A1 phase comprises a first IGBT tube, a second IGBT tube, a third IGBT tube, a fourth IGBT tube, a first diode, a second diode, a third diode and a fourth diode, wherein the collector electrode of the first IGBT tube is respectively connected with the positive electrode of the direct current side and the negative electrode of the first diode, the emitter electrode of the first IGBT tube is respectively connected with the positive electrode of the first diode, the collector electrode of the second IGBT tube, the negative electrode of the second diode, the collector electrode of the third IGBT tube and the second end of the first filtering module, the emitter electrode of the second IGBT tube is respectively connected with the positive electrode of the second diode and the negative electrode of the direct current side, the emitter electrode of the third IGBT tube is connected with the collector electrode of the fourth IGBT tube, and the emitter electrode of the fourth IGBT tube is connected with the middle point.
The embodiment of the invention also provides a bidirectional power supply, which comprises the I-type three-level ACDC circuit or the T-type three-level ACDC circuit.
The embodiment of the invention also provides an electrical device which comprises a shell and the bidirectional power supply arranged in the shell.
The beneficial effects of this application are:
the phase I three-level A1 and the phase I three-level A2 of the embodiment are connected in parallel through the first filter module, the phase I three-level B1 and the phase I three-level B2 of the embodiment are connected in parallel through the second filter module, and the phase I three-level C1 and the phase I three-level C2 of the embodiment are connected in parallel through the third filter module. In this way, the PWM driving misphase (leading or lagging) of each IGBT tube of the I-type three-level A1 phase and the corresponding IGBT tube of the I-type three-level A2 phase is 180 °, the PWM driving misphase (leading or lagging) of each IGBT tube of the I-type three-level B1 phase and the corresponding IGBT tube of the I-type three-level B2 phase is 180 °, and the PWM driving misphase (leading or lagging) of each IGBT tube of the I-type three-level C1 phase and the corresponding IGBT tube of the I-type three-level C2 phase is 180 °, so that the ripple current pulse on the direct current side can be significantly reduced, so that the capacity of the two capacitors on the direct current side is also reduced, thereby reducing the heat generation and volume.
Drawings
Fig. 1 is a circuit diagram of a type I three-level ACDC circuit provided by an embodiment of the present invention;
fig. 2 is a circuit diagram of a T-type three-level ACDC circuit provided by an embodiment of the present invention;
fig. 3 is a waveform diagram of a dc side current according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The phase I three-level A1 and the phase I three-level A2 of the embodiment are connected in parallel through the first filter module, the phase I three-level B1 and the phase I three-level B2 of the embodiment are connected in parallel through the second filter module, and the phase I three-level C1 and the phase I three-level C2 of the embodiment are connected in parallel through the third filter module. In this way, the PWM driving misphase (leading or lagging) of each IGBT tube of the I-type three-level A1 phase and the corresponding IGBT tube of the I-type three-level A2 phase is 180 °, the PWM driving misphase (leading or lagging) of each IGBT tube of the I-type three-level B1 phase and the corresponding IGBT tube of the I-type three-level B2 phase is 180 °, the PWM driving misphase (leading or lagging) of each IGBT tube of the I-type three-level C1 phase and the corresponding IGBT tube of the I-type three-level C2 phase is 180 °, the ripple current pulse on the direct current side can be significantly reduced, so that the capacity of the two capacitors on the direct current side is also reduced, and the heat productivity and the volume are further reduced.
Example 1
Referring to fig. 1 and 3, the type I three-level ACDC circuit of the present embodiment includes:
the positive electrode of the first capacitor C1 is connected with the positive electrode of the direct current side, the negative electrode of the first capacitor C1 is connected with the positive electrode of the second capacitor C2, the negative electrode of the second capacitor C2 is connected with the negative electrode of the direct current side, and the connecting point of the first capacitor C1 and the second capacitor C2 is a midpoint N;
the I-type three-level A1 phase 11, the I-type three-level A2 phase 14, the I-type three-level B1 phase 12, the I-type three-level B2 phase 15, the I-type three-level C1 phase 13 and the I-type three-level C2 phase 16 are respectively provided with a positive electrode end, a negative electrode end, a middle point end and an alternating current side inductance end, the positive electrode ends of the I-type three-level A1 phase 11, the I-type three-level A2 phase 14, the I-type three-level B1 phase 12, the I-type three-level B2 phase 15, the I-type three-level C1 phase 13 and the I-type three-level C2 phase 16 are respectively connected with a direct current side positive electrode, the negative electrode ends are respectively connected with a direct current side negative electrode, and the middle point ends are respectively connected with a middle point N;
the first end of the first filtering module 21 is respectively connected with one end of the power grid A phase 31 and one end of the third capacitor C3, the second end is connected with the alternating current side inductance end of the I-type three-level A1 phase 11, and the third end is connected with the alternating current side inductance end of the I-type three-level A2 phase 14;
The first end of the second filtering module 22 is respectively connected with one end of the power grid B phase 32 and one end of the fourth capacitor C4, the second end is connected with the alternating current side inductance end of the I-type three-level B1 phase 12, and the third end is connected with the alternating current side inductance end of the I-type three-level B2 phase 15; and
the first end of the third filtering module 23 is respectively connected with one end of the power grid C phase 33 and one end of the fifth capacitor C5, the second end is connected with the alternating current side inductance end of the I-type three-level C1 phase 13, and the third end is connected with the alternating current side inductance end of the I-type three-level C2 phase 16;
the other ends of the power grid A phase 31, the power grid B phase 32, the power grid C phase 33, the third capacitor C3, the fourth capacitor C4 and the fifth capacitor C5 are all connected with the midpoint N.
The type I three-level A1 phase 11 and the type I three-level A2 phase 14 of the present embodiment are connected in parallel through the first filter module 21, the type I three-level B1 phase 12 and the type I three-level B2 phase 15 are connected in parallel with the second filter module 22, and the type I three-level C1 phase 13 and the type I three-level C2 phase 16 are connected in parallel with the third filter module 23. In this way, the PWM driving misphase (leading or lagging) of each IGBT tube of the I-type three-level A1 phase 11 and the corresponding IGBT tube of the I-type three-level A2 is 180 °, the PWM driving misphase (leading or lagging) of each IGBT tube of the I-type three-level B1 phase 12 and the corresponding IGBT tube of the I-type three-level B2 is 180 °, the PWM driving misphase (leading or lagging) of each IGBT tube of the I-type three-level C1 phase 13 and the corresponding IGBT tube of the I-type three-level C2 is 180 °, and thus, ripple current pulsation on the direct current side can be significantly reduced, so that the capacity of two capacitors on the direct current side is also reduced, thereby reducing the heat generation amount and volume.
In this embodiment, the first filtering module 21, the second filtering module 22, and the third filtering module 23 are all filtering inductors, and the third capacitor C3, the fourth capacitor C4, and the fifth capacitor C5 are all filtering capacitors.
In this embodiment, the I-type three-level ACDC circuit is applied to a bidirectional power supply, where the power grid a phase 31, the power grid B phase 32, and the power grid C phase 33 are three phases on the ac side, and the positive terminal, the negative terminal, and the middle point of the I-type three-level A1 phase 11, the I-type three-level A2 phase 14, the I-type three-level B1 phase 12, the I-type three-level B2 phase 15, the I-type three-level C1 phase 13, and the I-type three-level C2 phase 16 are respectively connected to three ends on the dc side.
In this embodiment, the circuit structures of the type I three-level A1 phase 11, the type I three-level A2 phase 14, the type I three-level B1 phase 12, the type I three-level B2 phase 15, the type I three-level C1 phase 13, and the type I three-level C2 phase 16 are the same.
Specifically, the three-level circuit of I type comprises four IGBT pipes and six diode connections, is first IGBT pipe, second IGBT pipe, third IGBT pipe, fourth IGBT pipe respectively, and the collecting electrode and the projecting pole of second IGBT pipe connect the projecting pole of first IGBT pipe and the collecting electrode of third IGBT pipe respectively, and the collecting electrode of fourth IGBT pipe is connected to the projecting pole of third IGBT pipe, and a diode is all connected to every IGBT pipe, and the negative pole and the positive pole of diode are connected respectively to collecting electrode and the projecting pole of IGBT pipe, and two other diode series connection, and the negative pole and the positive pole of one of them diode are connected respectively at the negative pole of second IGBT pipe and another diode, and the projecting pole of third IGBT pipe is connected to the positive pole of another diode.
In this embodiment, an I-type three-level A1 phase 11, an I-type three-level B1 phase 12, and an I-type three-level C1 phase 13 are connected in parallel to form an I-type three-phase three-level circuit, an I-type three-level A2 phase 14, an I-type three-level B2 phase 15, and an I-type three-level C2 phase 16 are connected in parallel to form an I-type three-phase three-level circuit, and the two I-type three-phase three-level circuits have the same structure.
As shown in fig. 3, the positive terminals of the I-type three-level A1 phase 11, the I-type three-level B1 phase 12, and the I-type three-level C1 phase 13 are all connected to the dc side positive electrode, and the dc side ripple currents of the positive terminals of the I-type three-level A1 phase 11, the I-type three-level B1 phase 12, and the I-type three-level C1 phase 13 are all Idc1.Idc1 is a triangular wave.
The positive ends of the I-type three-level A2 phase 14, the I-type three-level B2 phase 15 and the I-type three-level C2 phase 16 are connected with the positive poles of the direct current sides, and the ripple currents of the positive ends of the I-type three-level A2 phase 14, the I-type three-level B2 phase 15 and the I-type three-level C2 phase 16 are Idc2.Idc2 is a triangular wave 180 ° out of phase with Idc1.
In this embodiment, a type I three-level A1 phase 11 and a type I three-level A2 phase 14 are described as examples. The direct current side current of the I-type three-level A1 phase 11 and the direct current side current of the I-type three-level A2 phase 14 are connected in parallel and then connected with the direct current side positive electrode.
Therefore, the current of the direct current side positive electrode is the vector superposition of the direct current side current of the I-type three-level A1 phase 11 and the direct current side current of the I-type three-level A2 phase 14, that is, the ripple current Idc of the direct current side positive electrode is the direct current side ripple current Idc1 of the I-type three-level A1 phase 11 and the direct current side ripple current Idc2 of the I-type three-level A2 phase 14, and as shown in fig. 3, the direct current side ripple current Idc of the direct current side positive electrode is a straight line, thus, the direct current side ripple current Idc pulsation of the direct current side positive electrode is greatly reduced, the capacity of the first capacitor C1 is reduced, and the heating value and the volume of the first capacitor C1 are further reduced.
Similarly, the ripple current on the dc side of the dc side negative electrode is also greatly reduced, so that the capacity of the second capacitor C2 is reduced, and the heat generation and the volume of the second capacitor C2 are further reduced.
The power grid A phase 31 is connected with the first filtering module 21, the I-type three-level A1 phase 11 and the I-type three-level A2 phase 14 are connected in parallel through the first filtering module 21, so that PWM driving error phases (leading or lagging) of IGBT tubes of the I-type three-level A1 phase 11 and IGBT tubes of the I-type three-level A2 phase 14 positioned at the same position are 180 degrees; the power grid B phase 32 is connected with the second filtering module 22, and the I-type three-level B1 phase 12 and the I-type three-level B2 phase 15 are connected in parallel through the second filtering module 22, so that PWM driving error phases (leading or lagging) of IGBT tubes of the I-type three-level B1 phase 12 and IGBT tubes of the I-type three-level B2 phase 15 positioned at the same position are 180 degrees; the power grid C phase 33 is connected with the third filtering module 23, and the I-type three-level C1 phase 13 and the I-type three-level C2 phase 16 are connected in parallel through the third filtering module 23, so that the PWM driving error phase (leading or lagging) of the IGBT tube of the I-type three-level C1 phase 13 and the PWM driving error phase (leading or lagging) of the IGBT tube positioned at the same position in the I-type three-level C2 phase 16 is 180 degrees.
Specifically, 180 ° out of phase refers to leading or lagging 180 °.
Example two
Referring to fig. 1, in some alternative embodiments, the first filtering module 21 includes a first inductor L11 and a second inductor L21, one end of the first inductor L11 is connected to the ac side inductor end of the phase 11 of the type I three-level A1, one end of the second inductor L21 is connected to the ac side inductor end of the phase 14 of the type I three-level A2, and the other end of the first inductor L11 is connected in parallel with the other end of the second inductor L21;
The first inductor L11 and the second inductor L21 are magnetic coupling inductors or independent inductors, and the number of turns of the first inductor L11 and the second inductor L21 is equal to the inductance;
the second filtering module 22 comprises a third inductor L12 and a fourth inductor L22, one end of the third inductor L12 is connected with an alternating current side inductor end of the I-type three-level B1 phase 12, one end of the fourth inductor L22 is connected with an alternating current side inductor end of the I-type three-level B2 phase 15, and the other end of the third inductor L12 is connected with the other end of the fourth inductor L22 in parallel;
the third inductor L12 and the fourth inductor L22 are magnetic coupling inductors or independent inductors, and the number of turns of the third inductor L12 and the fourth inductor L22 is equal to the inductance;
the third filtering module 23 comprises a fifth inductor L13 and a sixth inductor L23, one end of the fifth inductor L13 is connected with an alternating current side inductor end of the I-type three-level C1 phase 13, one end of the sixth inductor L23 is connected with an alternating current side inductor end of the I-type three-level C2 phase 16, and the other end of the fifth inductor L13 is connected with the other end of the sixth inductor L23 in parallel;
the fifth inductor L13 and the sixth inductor L23 are magnetic coupling inductors or independent inductors, and the number of turns and inductance of the fifth inductor L13 and the sixth inductor L23 are equal.
In this embodiment, the first end of the first filtering module 21 is one end of the first inductor L11 and one end of the second inductor L21 connected in parallel; the second end of the first filter module 21 is the other end of the first inductor L11; the third terminal of the first filter module 21 is the other terminal of the second inductor L21.
In the present embodiment, the first end of the second filtering module 22 is one end of the third inductor L12 and one end of the fourth inductor L22 connected in parallel; the second end of the second filtering module 22 is the other end of the third inductor L12; the third terminal of the second filter module 22 is the other terminal of the fourth inductor L22.
In this embodiment, the first end of the third filtering module 23 is one end of the fifth inductor L13 and one end of the sixth inductor L23 connected in parallel; the second end of the third filtering module 23 is the other end of the fifth inductor L13; the third terminal of the third filter module 23 is the other terminal of the sixth inductor L23.
In this embodiment, the first inductor L11 and the second inductor L21, the third inductor L12 and the fourth inductor L22, and the fifth inductor L13 and the sixth inductor L23 all use magnetic coupling inductors, the first inductor L11 and the second inductor L21 may share a magnetic core, the third inductor L12 and the fourth inductor L22 may share a magnetic core, and the fifth inductor L13 and the sixth inductor L23 may share a magnetic core. In this way, the volumes and weights of the first filter module 21, the second filter module 22 and the third filter module 23 are reduced, so that the first filter module 21, the second filter module 22 and the third filter module 23 reduce the space occupied on the PCB board to the greatest extent under the condition of meeting the circuit requirement.
In other embodiments, the first inductor L11 and the second inductor L21 may also use separate inductors, the third inductor L12 and the fourth inductor L22 may also use separate inductors, and the fifth inductor L13 and the sixth inductor L23 may also use separate inductors. Therefore, when any one of the inductors fails, the failed inductor is replaced, so that the operation is simple, and the cost is reduced.
With respect to the filter inductance in the conventional three-level ACDC circuit, in the present embodiment, the number of turns and inductance of the first inductor L11 and the second inductor L21 are equal, the number of turns and inductance of the third inductor L12 and the fourth inductor L22 are equal, the number of turns and inductance of the fifth inductor L13 and the sixth inductor L23 are equal, the current flowing through the first inductor L11 is equal to the current flowing through the second inductor L21, the current flowing through the third inductor L12 is equal to the current flowing through the fourth inductor L22, and the current flowing through the fifth inductor L13 is equal to the current flowing through the sixth inductor L23.
In this way, the volumes and the heat generation amounts of the first inductance L11 and the second inductance L21, the third inductance L12 and the fourth inductance L22, and the fifth inductance L13 and the sixth inductance L23 are reduced. Meanwhile, the heights of the inductors can be unified, the inductors are conveniently distributed on the PCB, the occupied space on the PCB is reduced, and the volume of the bidirectional power supply is further reduced.
In this embodiment, a type I three-level A1 phase 11 and a type I three-level A2 phase 14 are described as examples. Since the PWM driving misphase (leading or lagging) of the dc side is 180 °, that is, the PWM driving misphase (leading or lagging) of the IGBT tube of the I-type three-level A1 phase 11 and the PWM driving misphase (leading or lagging) of the IGBT tube of the I-type three-level A2 phase 14 located at the same position, the PWM driving misphase (leading or lagging) of the first inductor L11 and the second inductor L21 of the ac side is 180 °.
The current of the first inductor L11 and the current of the second inductor L21 are out of phase by 180 degrees, so that the pulsation of the total input current of the alternating current side after the first inductor L11 and the second inductor L21 are connected in parallel is reduced, the capacity of the third capacitor C3 is reduced, and the heating value and the volume of the third capacitor C3 are further reduced.
Similarly, the current of the third inductor L12 and the current of the fourth inductor L22 are also 180 ° out of phase, the current of the fifth inductor L13 and the current of the sixth inductor L23 are also 180 ° out of phase, so that the pulsation of the total input current of the ac side after the third inductor L12 and the fourth inductor L22, and the fifth inductor L13 and the sixth inductor L23 are connected in parallel is reduced, the capacities of the fourth capacitor C4 and the fifth capacitor C5 are reduced, and the heating value and the volume of the fourth capacitor C4 and the fifth capacitor C5 are further reduced.
Specifically, the connection relationship of each structure in this embodiment is:
The first capacitor C1 is connected with the positive electrode of the direct current side, the negative electrode of the first capacitor C1 is connected with the positive electrode of the second capacitor C2, the negative electrode of the second capacitor C2 is connected with the negative electrode of the direct current side, and the connecting point of the first capacitor C1 and the second capacitor C2 is a midpoint N.
The positive electrode of the direct current side is respectively connected with positive ends of an I-type three-level A1 phase 11, an I-type three-level A2 phase 14, an I-type three-level B1 phase 12, an I-type three-level B2 phase 15, an I-type three-level C1 phase 13 and an I-type three-level C2 phase 16, the negative electrode of the direct current side is respectively connected with negative ends of the I-type three-level A1 phase 11, the I-type three-level A2 phase 14, the I-type three-level B1 phase 12, the I-type three-level B2 phase 15, the I-type three-level C1 phase 13 and the I-type three-level C2 phase 16, and the middle point N is respectively connected with middle point ends of the I-type three-level A1 phase 11, the I-type three-level A2 phase 14, the I-type three-level B1 phase 12, the I-type three-level B2 phase 15, the I-type three-level C1 phase 13 and the I-type three-level C2 phase 16.
The alternating current side inductance end of the I-type three-level A1 phase 11 is connected with one end of a first inductor L11, the alternating current side inductance end of the I-type three-level A2 phase 14 is connected with one end of a second inductor L21, the other ends of the first inductor L11 and the second inductor L21 are connected in parallel and then are respectively connected with one end of a power grid A phase 31 and one end of a third capacitor C3, and the other ends of the power grid A phase 31 and the third capacitor C3 are both connected with a midpoint N.
The alternating current side inductance end of the I-type three-level B1 phase 12 is connected with one end of a third inductance L12, the alternating current side inductance end of the I-type three-level B2 phase 15 is connected with one end of a fourth inductance L22, the other ends of the third inductance L12 and the fourth inductance L22 are connected in parallel and then are respectively connected with one end of a power grid B phase 32 and one end of a fourth capacitance C4, and the other ends of the power grid B phase 32 and the fourth capacitance C4 are both connected with a midpoint N.
The alternating current side inductance end of the I-type three-level C1 phase 13 is connected with one end of a fifth inductance L13, the alternating current side inductance end of the I-type three-level C2 phase 16 is connected with one end of a sixth inductance L23, the other ends of the fifth inductance L13 and the sixth inductance L23 are connected in parallel and then are respectively connected with one end of a power grid C phase 33 and one end of a fifth capacitance C5, and the other ends of the power grid C phase 33 and the other end of the fifth capacitance C5 are both connected with a midpoint N.
Example III
Referring to fig. 1, in the embodiment, the circuit structures of the type I tri-level A1 phase 11, the type I tri-level A2 phase 14, the type I tri-level B1 phase 12, the type I tri-level B2 phase 15, the type I tri-level C1 phase 13 and the type I tri-level C2 phase 16 are the same;
the I-type three-level A1 phase 11 comprises a first IGBT Q11, a second IGBT Q12, a third IGBT Q13, a fourth IGBT Q14, a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5, and a sixth diode D6, wherein the collector of the first IGBT Q11 is connected to the positive pole of the direct current side and the negative pole of the first diode D1, the emitter of the first IGBT Q11 is connected to the positive pole of the first diode D1, the collector of the second IGBT Q12, the negative pole of the second diode D2, and the negative pole of the fifth diode D5, the positive pole of the fifth diode D5 is connected to the negative pole and the midpoint N of the sixth diode D6, the emitter of the second IGBT Q12 is connected to the positive pole of the second diode D2, the collector of the third IGBT Q13, the negative pole of the third diode D3, and the second end of the first filter module 21, the positive pole of the third IGBT Q13 is connected to the positive pole of the fourth diode D4, and the negative pole of the fourth IGBT 4 are connected to the positive pole of the fourth diode D4, and the negative pole of the fourth diode D4.
In this embodiment, the type I three-level A1 phase 11, the type I three-level A2 phase 14, the type I three-level B1 phase 12, the type I three-level B2 phase 15, the type I three-level C1 phase 13, and the type I three-level C2 phase 16 are all type I three-level circuits. Thus, the circuit structures of the phases are the same, the types of devices are reduced, and the manufacturing is convenient.
In this embodiment, the positive terminal of the I-type three-level A1 phase 11 is the collector of the first IGBT Q11, the negative terminal is the emitter of the fourth IGBT Q14, the middle terminal is the positive terminal of the fifth diode D5, and the ac side inductance terminal is the emitter of the second IGBT Q12.
It can be understood that the circuit structure of other phases is the same as that of the type I three-level A1 phase 11, and the specific connection modes of other phases are as follows:
specifically, the I-type three-level B1 phase 12 includes a fifth IGBT transistor Q15, a sixth IGBT transistor Q16, a seventh IGBT transistor Q17, an eighth IGBT transistor Q18, a seventh diode D7, an eighth diode D8, a ninth diode D9, a tenth diode D10, an eleventh diode D11, and a twelfth diode D12.
The collector of the fifth IGBT tube Q15 is connected with the cathode of the seventh diode D7, the emitter of the fifth IGBT tube Q15 is respectively connected with the anode of the seventh diode D7, the collector of the sixth IGBT tube Q16, the cathode of the eighth diode D8 and the cathode of the eleventh diode D11, the anode of the eleventh diode D11 is connected with the cathode of the twelfth diode D12, the emitter of the sixth IGBT tube Q16 is respectively connected with the anode of the eighth diode D8, the collector of the seventh IGBT tube Q17 and the cathode of the ninth diode D9, the emitter of the seventh IGBT tube Q17 is respectively connected with the anode of the ninth diode D9, the collector of the eighth IGBT tube Q18, the cathode of the twelfth diode D10 and the anode of the twelfth diode D12, and the emitter of the eighth IGBT tube Q18 is connected with the anode of the twelfth diode D10.
In this embodiment, the positive terminal of the I-type three-level B1 phase 12 is the collector of the fifth IGBT Q15, the negative terminal is the emitter of the eighth IGBT Q18, the middle terminal is the positive terminal of the eleventh capacitor, and the ac side inductance terminal is the emitter of the sixth IGBT Q16.
Specifically, the I-type three-level C1 phase 13 includes a ninth IGBT transistor Q19, a tenth IGBT transistor Q110, an eleventh IGBT transistor Q111, a twelfth IGBT transistor Q112, a thirteenth diode D13, a fourteenth diode D14, a fifteenth diode D15, a sixteenth diode D16, a seventeenth diode D17, and an eighteenth diode D18.
The collector of the ninth IGBT tube Q19 is connected with the cathode of the thirteenth diode D13, the emitter of the ninth IGBT tube Q19 is respectively connected with the anode of the thirteenth diode D13, the collector of the tenth IGBT tube Q110, the cathode of the fourteenth diode D14 and the cathode of the seventeenth diode D17, the anode of the seventeenth diode D17 is connected with the cathode of the eighteenth diode D18, the emitter of the tenth IGBT tube Q110 is respectively connected with the anode of the fourteenth diode D14, the collector of the eleventh IGBT tube Q111 and the cathode of the fifteenth diode D15, the emitter of the eleventh IGBT tube Q111 is respectively connected with the anode of the fifteenth diode D15, the collector of the twelfth IGBT tube Q112, the cathode of the sixteenth diode D16 and the anode of the eighteenth diode D18, and the emitter of the twelfth IGBT tube Q112 is connected with the anode of the sixteenth diode D16.
In this embodiment, the positive terminal of the I-type three-level C1 phase 13 is the collector of the ninth IGBT Q19, the negative terminal is the emitter of the twelfth IGBT Q112, the middle terminal is the positive terminal of the seventeenth diode D17, and the ac-side inductance terminal is the emitter of the tenth IGBT Q110.
Specifically, the I-type three-level A2 phase 14 includes a thirteenth IGBT transistor Q21, a fourteenth IGBT transistor Q22, a fifteenth IGBT transistor Q23, a sixteenth IGBT transistor Q24, a nineteenth diode D19, a twentieth diode D20, a twenty first diode D21, a twenty second diode D22, a twenty third diode D23, and a twenty fourth diode D24.
The collector of the thirteenth IGBT tube Q21 is connected with the cathode of the nineteenth diode D19, the emitter of the thirteenth IGBT tube Q21 is respectively connected with the anode of the nineteenth diode D19, the collector of the fourteenth IGBT tube Q22, the cathode of the twentieth diode D20 and the cathode of the twenty-third diode D23, the anode of the twenty-third diode D23 is connected with the cathode of the twenty-fourth diode D24, the emitter of the fourteenth IGBT tube Q22 is respectively connected with the anode of the twentieth diode D20, the collector of the fifteenth IGBT tube Q23 and the cathode of the twenty-second diode D21, the emitter of the fifteenth IGBT tube Q23 is respectively connected with the anode of the twenty-second diode D21, the collector of the twenty-second diode D22 and the anode of the twenty-fourth diode D24, and the emitter of the sixteenth IGBT tube Q24 is connected with the anode of the twenty-second diode D22.
In this embodiment, the positive terminal of the I-type three-level A2 phase 14 is the collector of the thirteenth IGBT Q21, the negative terminal is the emitter of the sixteenth IGBT Q24, the middle terminal is the positive terminal of the twenty-third capacitor, and the ac-side inductance terminal is the emitter of the fourteenth IGBT Q22.
Specifically, the I-type three-level B2 phase 15 includes a seventeenth IGBT transistor Q25, an eighteenth IGBT transistor Q26, a nineteenth IGBT transistor Q28, a twentieth IGBT transistor Q29, a twenty fifth diode D25, a twenty sixth diode D26, a twenty seventh diode D27, a twenty eighth diode D28, a twenty ninth diode D29, and a thirty second diode D30.
The collector of the seventeenth IGBT tube Q25 is connected with the cathode of the twenty-fifth diode D25, the emitter of the seventeenth IGBT tube Q25 is respectively connected with the anode of the twenty-fifth diode D25, the collector of the eighteenth IGBT tube Q26, the cathode of the twenty-sixth diode D26 and the cathode of the twenty-ninth diode D29, the anode of the twenty-ninth diode D29 is connected with the cathode of the thirty-eighth diode D30, the emitter of the eighteenth IGBT tube Q26 is respectively connected with the anode of the twenty-sixth diode D26, the collector of the nineteenth IGBT tube Q28 and the cathode of the twenty-seventh diode D27, and the emitter of the nineteenth IGBT tube Q28 is respectively connected with the anode of the twenty-seventh diode D27, the collector of the twenty-eighth diode Q29, the cathode of the twenty-eighth diode D28 and the anode of the thirty-eighth diode D30, and the emitter of the twenty-eighth diode Q29 is connected with the anode of the twenty-eighth diode D28.
In this embodiment, the positive terminal of the I-type three-level B2 phase 15 is the collector of the seventeenth IGBT Q25, the negative terminal is the emitter of the twentieth IGBT Q29, the middle terminal is the positive terminal of the twenty-ninth diode D29, and the ac-side inductance terminal is the emitter of the eighteenth IGBT Q26.
Specifically, the type I three-level C2 phase 16 includes a twenty-first IGBT tube Q29, a twenty-second IGBT tube Q210, a twenty-third IGBT tube Q211, a twenty-fourth IGBT tube Q212, a thirty-first diode D31, a thirty-second diode D32, a thirty-third diode D33, a thirty-fourth diode D34, a thirty-fifth diode D35, and a thirty-sixth diode D36.
The collector of the twenty-first IGBT tube Q29 is connected with the cathode of the thirty-second diode D31, the emitter of the twenty-first IGBT tube Q29 is respectively connected with the anode of the thirty-second diode D31, the collector of the twenty-second IGBT tube Q210, the cathode of the thirty-second diode D32 and the cathode of the thirty-fifth diode D35, the anode of the thirty-fifth diode D35 is connected with the cathode of the thirty-sixth diode D36, the emitter of the twenty-second IGBT tube Q210 is respectively connected with the anode of the thirty-second diode D32, the collector of the twenty-third IGBT tube Q211 and the cathode of the thirty-third diode D33, the emitter of the twenty-third IGBT tube Q211 is respectively connected with the anode of the thirty-third diode D33, the collector of the twenty-fourth IGBT tube Q212, the cathode of the thirty-fourth diode D34 and the anode of the thirty-sixth diode D36, and the emitter of the twenty-fourth IGBT tube Q212 is connected with the anode of the thirty-fourth diode D34.
In this embodiment, the positive terminal of the I-type three-level C2 phase 16 is the collector of the twenty-first IGBT Q29, the negative terminal is the emitter of the twenty-fourth IGBT Q212, the middle point terminal is the positive terminal of the thirty-fifth diode D35, and the ac-side inductance terminal is the emitter of the twenty-second IGBT Q210.
In other embodiments, siC, MOSFET tubes may be used instead of IGBT tubes, and are not limited in this particular regard.
In this embodiment, each IGBT tube of the I-type tri-level A1 phase 11 is 180 ° out of phase with the PWM drive of the IGBT tube located at the same position in the I-type tri-level A2 phase 14, each IGBT tube of the I-type tri-level B1 phase 12 is 180 ° out of phase with the PWM drive of the IGBT tube located at the same position in the I-type tri-level B2 phase 15 corresponding to the position, and each IGBT tube of the I-type tri-level C1 phase 13 is 180 ° out of phase with the PWM drive of the IGBT tube located at the same position in the I-type tri-level C2 phase 16.
Specifically, 180 ° out of phase refers to leading or lagging 180 °.
In this embodiment, each IGBT tube of the I-type three-level A1 phase 11 is 180 ° out of PWM drive phase with the IGBT tube of the I-type three-level A2 phase 14 at the same position, which means 180 ° out of PWM drive phase with the first IGBT tube Q11 and the thirteenth IGBT tube Q21, 180 ° out of PWM drive phase with the second IGBT tube Q12 and the fourteenth IGBT tube Q22, 180 ° out of PWM drive phase with the third IGBT tube Q13 and the fifteenth IGBT tube Q23, and 180 ° out of PWM drive phase with the fourth IGBT tube Q14 and the sixteenth IGBT tube Q24.
In this embodiment, each IGBT tube of the I-type three-level B1 phase 12 is 180 ° in PWM drive error phase of the IGBT tube located at the same position in the I-type three-level B2 phase 15 corresponding to the position, which means 180 ° in PWM drive error phase of the fifth IGBT tube Q15 and the seventeenth IGBT tube Q25, 180 ° in PWM drive error phase of the sixth IGBT tube Q16 and the eighteenth IGBT tube Q26, 180 ° in PWM drive error phase of the seventh IGBT tube Q17 and the nineteenth IGBT tube Q28, and 180 ° in PWM drive error phase of the eighth IGBT tube Q18 and the twentieth IGBT tube Q29.
In this embodiment, each IGBT tube of the I-type three-level C1 phase 13 is 180 ° out of PWM drive phase with the IGBT tube of the I-type three-level C2 phase 16 at the same position, which means 180 ° out of PWM drive phase with the ninth IGBT tube Q19 and the twenty-first IGBT tube Q29, 180 ° out of PWM drive phase with the tenth IGBT tube Q110 and the twenty-second IGBT tube Q210, 180 ° out of PWM drive phase with the eleventh IGBT tube Q111 and the twenty-third IGBT tube Q211, and 180 ° out of PWM drive phase with the twelfth IGBT tube Q112 and the twenty-fourth IGBT tube Q212.
Example IV
Referring to fig. 2, the T-type three-level ACDC circuit of the present embodiment includes:
the positive electrode of the first capacitor C6 is connected with the positive electrode of the direct current side, the negative electrode of the first capacitor C6 is connected with the positive electrode of the second capacitor C7, the negative electrode of the second capacitor C7 is connected with the negative electrode of the direct current side, and the connecting point of the first capacitor C6 and the second capacitor C7 is a midpoint N;
The positive ends of the T-shaped three-level A1 phase 41, the T-shaped three-level A2 phase 44, the T-shaped three-level B1 phase 42, the T-shaped three-level B2 phase 45, the T-shaped three-level C1 phase 43 and the T-shaped three-level C2 phase 46 are respectively provided with a positive end, a negative end, a middle point end and an alternating current side inductance end, the positive ends of the T-shaped three-level A1 phase 41, the T-shaped three-level A2 phase 44, the T-shaped three-level B1 phase 42, the T-shaped three-level B2 phase 45, the T-shaped three-level C1 phase 43 and the T-shaped three-level C2 phase 46 are respectively connected with a direct current side positive electrode, the two ends of the negative electrode are respectively connected with a direct current side negative electrode, and the middle point end is respectively connected with a middle point N;
the first end of the first filtering module 51 is respectively connected with one end of the power grid A phase 61 and one end of the third capacitor C8, the second end is connected with the alternating current side inductance end of the T-shaped three-level A1 phase 41, and the third end is connected with the alternating current side inductance end of the T-shaped three-level A2 phase 44;
the first end of the second filtering module 52 is respectively connected with one end of the power grid B phase 62 and one end of the fourth capacitor C9, the second end is connected with the alternating current side inductance end of the T-shaped three-level B1 phase 42, and the third end is connected with the alternating current side inductance end of the T-shaped three-level B2 phase 45; and
the first end of the third filtering module 53 is respectively connected with one end of the power grid C phase 63 and one end of the fifth capacitor C10, the second end is connected with the alternating current side inductance end of the T-shaped three-level C1 phase 43, and the third end is connected with the alternating current side inductance end of the T-shaped three-level C2 phase 46;
The other ends of the grid A phase 61, the grid B phase 62, the grid C phase 63, the third capacitor C8, the fourth capacitor C9 and the fifth capacitor C10 are all connected with the midpoint N.
The T-type three-level A1 phase 41 and the T-type three-level A2 phase 44 of the present embodiment are connected in parallel through the first filter module 51, the T-type three-level B1 phase 42 and the T-type three-level B2 phase 45 are connected in parallel with the second filter module 52, and the T-type three-level C1 phase 43 and the T-type three-level C2 phase 46 are connected in parallel with the third filter module 53. In this way, the PWM driving misphase (leading or lagging) of each IGBT tube of the T-type three-level A1 phase 41 and the corresponding IGBT tube of the T-type three-level A2 is 180 °, the PWM driving misphase (leading or lagging) of each IGBT tube of the T-type three-level B1 phase 42 and the corresponding IGBT tube of the T-type three-level B2 is 180 °, the PWM driving misphase (leading or lagging) of each IGBT tube of the T-type three-level C1 phase 43 and the corresponding IGBT tube of the T-type three-level C2 is 180 °, and thus, ripple current pulsation on the direct current side can be significantly reduced, so that the capacity of two capacitors on the direct current side is also reduced, thereby reducing the heat generation amount and volume.
In this embodiment, the first filtering module 51, the second filtering module 52, and the third filtering module 53 are all filtering inductors, and the third capacitor C8, the fourth capacitor C9, and the fifth capacitor C10 are all filtering capacitors.
In this embodiment, the T-type three-level ACDC circuit is applied to a bidirectional power supply, where the power grid a phase 61, the power grid B phase 62, and the power grid C phase 63 are three phases on the ac side, and the positive terminal, the negative terminal, and the middle point of the T-type three-level A1 phase 41, the T-type three-level A2 phase 44, the T-type three-level B1 phase 42, the T-type three-level B2 phase 45, the T-type three-level C1 phase 43, and the T-type three-level C2 phase 46 are respectively connected to three ends on the dc side.
In the present embodiment, the circuit structures of the T-type three-level A1 phase 41, the T-type three-level A2 phase 44, the T-type three-level B1 phase 42, the T-type three-level B2 phase 45, the T-type three-level C1 phase 43, and the T-type three-level C2 phase 46 are the same.
Specifically, the T-shaped three-level circuit is formed by connecting four IGBT tubes and four diodes, wherein the T-shaped three-level circuit is respectively a first IGBT tube, a second IGBT tube, a third IGBT tube and a fourth IGBT tube, the emitting electrodes of the first IGBT tube are respectively connected with the collecting electrodes of the second IGBT tube and the third IGBT tube, the emitting electrodes of the third IGBT tube are connected with the emitting electrodes of the fourth IGBT tube, each IGBT tube is connected with one diode, and the collecting electrodes and the emitting electrodes of the IGBT tubes are respectively connected with the negative electrode and the positive electrode of the diode.
In this embodiment, a T-type three-level A1 phase 41, a T-type three-level B1 phase 42, and a T-type three-level C1 phase 43 are connected in parallel to form a T-type three-phase three-level circuit, a T-type three-level A2 phase 44, a T-type three-level B2 phase 45, and a T-type three-level C2 phase 46 are connected in parallel to form a T-type three-phase three-level circuit, and the two T-type three-phase three-level circuits have the same structure.
In the invention, the circuit principle of the T-type three-level ACDC circuit is the same as that of the I-type three-level ACDC circuit. Therefore, the ripple of the dc side ripple current of the dc side positive electrode is reduced, so that the capacity of the first capacitor C6 is reduced, and the heat generation amount and the volume of the first capacitor C6 are further reduced. Similarly, the ripple current on the direct current side of the direct current side negative electrode is reduced, so that the capacity of the second capacitor C7 is reduced, and the heating value and the volume of the second capacitor C7 are further reduced.
The power grid A phase 61 is connected with the first filtering module 51, and the T-shaped three-level A1 phase 41 and the T-shaped three-level A2 phase 44 are connected in parallel through the first filtering module 51, so that PWM driving error phases (leading or lagging) of IGBT tubes of the T-shaped three-level A1 phase 41 and IGBT tubes of the T-shaped three-level A2 phase 44 positioned at the same position are 180 degrees; the power grid B phase 62 is connected with the second filtering module 52, and the T-shaped three-level B1 phase 42 and the T-shaped three-level B2 phase 45 are connected in parallel through the second filtering module 52, so that PWM driving error phases (leading or lagging) of IGBT tubes of the T-shaped three-level B1 phase 42 and IGBT tubes of the T-shaped three-level B2 phase 45 positioned at the same position are 180 degrees; the power grid C phase 63 is connected with the third filtering module 53, and the T-shaped three-level C1 phase 43 and the T-shaped three-level C2 phase 46 are connected in parallel through the third filtering module 53, so that the PWM driving error phase (leading or lagging) of the IGBT tube of the T-shaped three-level C1 phase 43 and the PWM driving error phase (leading or lagging) of the IGBT tube positioned at the same position in the T-shaped three-level C2 phase 46 is 180 degrees.
Specifically, 180 ° out of phase refers to leading or lagging 180 °.
Example five
Referring to fig. 2, in some alternative embodiments, the first filtering module 51 includes a first inductor L31 and a second inductor L41, one end of the first inductor L31 is connected to the ac side inductor end of the T-type three-level A1 phase 41, one end of the second inductor L41 is connected to the ac side inductor end of the T-type three-level A2 phase 44, and the other end of the first inductor L31 is connected in parallel with the other end of the second inductor L41;
the first inductor L31 and the second inductor L41 are magnetic coupling inductors or independent inductors, and the number of turns of the first inductor L31 and the second inductor L41 is equal to the inductance;
the second filtering module 52 includes a third inductor L32 and a fourth inductor L42, one end of the third inductor L32 is connected to the ac side inductor end of the T-type three-level B1 phase 42, one end of the fourth inductor L32 is connected to the ac side inductor end of the T-type three-level B2 phase 45, and the other end of the third inductor L32 is connected in parallel with the other end of the fourth inductor L42;
the third inductor L32 and the fourth inductor L42 are magnetic coupling inductors or independent inductors, and the number of turns of the third inductor L32 and the fourth inductor L42 is equal to the inductance;
the third filtering module 53 includes a fifth inductor L33 and a sixth inductor L43, where one end of the fifth inductor L33 is connected to the ac side inductor end of the T-type three-level C1 phase 43, one end of the sixth inductor L43 is connected to the ac side inductor end of the T-type three-level C2 phase 46, and the other end of the fifth inductor L33 is connected in parallel with the other end of the sixth inductor L43;
The fifth inductor L33 and the sixth inductor L43 are magnetic coupling inductors or independent inductors, and the number of turns and the inductance of the fifth inductor L33 and the sixth inductor L43 are equal.
In this embodiment, the first end of the first filtering module 51 is one end of the first inductor L31 and one end of the second inductor L41 connected in parallel; the second end of the first filter module 51 is the other end of the first inductor L31; the third terminal of the first filter module 51 is the other terminal of the second inductor L41.
In the present embodiment, the first end of the second filtering module 52 is one end of the third inductor L32 and one end of the fourth inductor L42 connected in parallel; the second end of the second filtering module 52 is the other end of the third inductor L32; the third terminal of the second filter module 52 is the other terminal of the fourth inductor L42.
In the present embodiment, the first end of the third filtering module 53 is one end of the fifth inductor L33 and one end of the sixth inductor L43 connected in parallel; the second end of the third filtering module 53 is the other end of the fifth inductor L33; the third terminal of the third filtering module 53 is the other terminal of the sixth inductance L43.
In this embodiment, the first filtering module 51, the second filtering module 52 and the third filtering module 53 all use magnetic coupling inductors, the first inductor L31 and the second inductor L41 may share a magnetic core, the third inductor L32 and the fourth inductor L42 may share a magnetic core, and the fifth inductor L33 and the sixth inductor L43 may share a magnetic core. In this way, the volumes and weights of the first filtering module 51, the second filtering module 52 and the third filtering module 53 are reduced, so that the first filtering module 51, the second filtering module 52 and the third filtering module 53 minimize the space occupied on the PCB board under the condition of meeting the circuit requirement.
In other embodiments, the first inductor L31 and the second inductor L41 may also use separate inductors, the third inductor L32 and the fourth inductor L42 may also use separate inductors, and the fifth inductor L33 and the sixth inductor L43 may also use separate inductors. Therefore, when any one of the inductors fails, only the corresponding inductor needs to be replaced, the operation is simple, and the cost is reduced.
With respect to the filter inductance in the conventional three-level ACDC circuit, in the present embodiment, the number of turns and inductance of the first inductor L31 and the second inductor L41 are equal, the number of turns and inductance of the third inductor L32 and the fourth inductor L42 are equal, the number of turns and inductance of the fifth inductor L33 and the sixth inductor L43 are equal, the current flowing through the first inductor L31 is equal to the current flowing through the second inductor L41, the current flowing through the third inductor L32 is equal to the current flowing through the fourth inductor L42, and the current flowing through the fifth inductor L33 is equal to the current flowing through the sixth inductor L43.
In this way, the volumes and the heat generation amounts of the first inductance L31 and the second inductance L41, the third inductance L32 and the fourth inductance L42, and the fifth inductance L33 and the sixth inductance L43 are reduced. Meanwhile, the heights of the inductors can be unified, the inductors are conveniently distributed on the PCB, the occupied space on the PCB is reduced, and the volume of the bidirectional power supply is further reduced.
In this embodiment, a T-type three-level A1 phase 41 and a T-type three-level A2 phase 44 are described as examples. Since the PWM driving misphase (leading or lagging) of the dc side is 180 °, that is, the PWM driving misphase (leading or lagging) of the IGBT tube of the T-type three-level A1 phase 41 and the PWM driving misphase (leading or lagging) of the IGBT tube of the T-type three-level A2 phase 44 located at the same position, the PWM driving misphase (leading or lagging) of the first inductance L31 and the second inductance L41 of the ac side is 180 °.
The current of the first inductor L31 and the current of the second inductor L41 are out of phase by 180 degrees, so that the pulsation of the total input current of the alternating current side after the first inductor L31 and the second inductor L41 are connected in parallel is reduced, the capacity of the third capacitor C8 is reduced, and the heating value and the volume of the third capacitor C8 are further reduced.
Similarly, the current of the third inductor L32 and the current of the fourth inductor L42 are also 180 ° out of phase, the current of the fifth inductor L33 and the current of the sixth inductor L43 are also 180 ° out of phase, pulsation of the total input current of the ac side after the third inductor L32 and the fourth inductor L42, and the fifth inductor L33 and the sixth inductor L43 are connected in parallel is reduced, the capacity of the fourth capacitor C9 and the fifth capacitor C10 is reduced, and the heating value and the volume of the fourth capacitor C9 and the fifth capacitor C10 are further reduced.
Specifically, the connection relationship of each structure in this embodiment is:
The first capacitor C6 is connected with the positive electrode of the direct current side, the negative electrode of the first capacitor C6 is connected with the positive electrode of the second capacitor C7, the negative electrode of the second capacitor C7 is connected with the negative electrode of the direct current side, and the connecting point of the first capacitor C6 and the second capacitor C7 is a midpoint N.
The positive electrode of the direct current side is respectively connected with positive ends of a T-shaped three-level A1 phase 41, a T-shaped three-level A2 phase 44, a T-shaped three-level B1 phase 42, a T-shaped three-level B2 phase 45, a T-shaped three-level C1 phase 43 and a T-shaped three-level C2 phase 46, the negative electrode of the direct current side is respectively connected with negative ends of the T-shaped three-level A1 phase 41, the T-shaped three-level A2 phase 44, the T-shaped three-level B1 phase 42, the T-shaped three-level B2 phase 45, the T-shaped three-level C1 phase 43 and the T-shaped three-level C2 phase 46, and the middle point N is respectively connected with middle point ends of the T-shaped three-level A1 phase 41, the T-shaped three-level A2 phase 44, the T-shaped three-level B1 phase 42, the T-shaped three-level B2 phase 45, the T-shaped three-level C1 phase 43 and the T-shaped three-level C2 phase 46.
The alternating current side inductance end of the T-shaped three-level A1 phase 41 is connected with one end of a first inductor L31, the alternating current side inductance end of the T-shaped three-level A2 phase 44 is connected with one end of a second inductor L41, the other ends of the first inductor L31 and the second inductor L41 are connected in parallel and then are respectively connected with one end of a power grid A phase 61 and one end of a third capacitor C8, and the other ends of the power grid A phase 61 and the third capacitor C8 are both connected with a midpoint N.
The alternating current side inductance end of the T-shaped three-level B1 phase 42 is connected with one end of a third inductance L32, the alternating current side inductance end of the T-shaped three-level B2 phase 45 is connected with one end of a fourth inductance L42, the other ends of the third inductance L32 and the fourth inductance L42 are connected in parallel and then are respectively connected with one end of a power grid B phase 62 and one end of a fourth capacitance C9, and the other ends of the power grid B phase 62 and the fourth capacitance C9 are both connected with a midpoint N.
The alternating current side inductance end of the T-shaped three-level C1 phase 43 is connected with one end of a fifth inductance L33, the alternating current side inductance end of the T-shaped three-level C2 phase 46 is connected with one end of a sixth inductance L43, the other ends of the fifth inductance L33 and the sixth inductance L43 are connected in parallel and then are respectively connected with one end of a power grid C phase 63 and one end of a fifth capacitance C10, and the other ends of the power grid C phase 63 and the other end of the fifth capacitance C10 are both connected with a midpoint N.
Example six
Referring to fig. 2, in the present embodiment, the circuit structures of the T-type tri-level A1 phase 41, the T-type tri-level A2 phase 44, the T-type tri-level B1 phase 42, the T-type tri-level B2 phase 45, the T-type tri-level C1 phase 43 and the T-type tri-level C2 phase 46 are the same;
the T-type three-level A1 phase 41 includes a first IGBT Q31, a second IGBT Q32, a third IGBT Q33, a fourth IGBT Q34, a first diode D1, a second diode D2, a third diode D3, and a fourth diode D4, wherein the collector of the first IGBT Q31 is connected to the positive electrode of the direct current side and the negative electrode of the first diode D1, respectively, the emitter of the first IGBT Q31 is connected to the positive electrode of the first diode D1, the collector of the second IGBT Q32, the negative electrode of the second diode D2, the collector of the third IGBT Q33, and the second end of the first filter module 51, the emitter of the second IGBT Q32 is connected to the positive electrode and the negative electrode of the direct current side of the second diode D2, respectively, the emitter of the third IGBT Q33 is connected to the collector of the fourth IGBT Q34, and the emitter of the fourth IGBT Q34 is connected to the midpoint N.
In this embodiment, the T-type three-level A1 phase 41, the T-type three-level B1 phase 42, and the T-type three-level C1 phase 43 form a T-type three-phase three-level circuit, and the T-type three-level A2 phase 44, the T-type three-level B2 phase 45, and the T-type three-level C2 phase 46 also form a T-type three-phase three-level circuit. Thus, the circuit structures of the phases are the same, the types of devices are reduced, and the manufacturing is convenient.
In this embodiment, the positive terminal of the T-type three-level A1 phase 41 is the collector of the first IGBT Q31, the negative terminal is the emitter of the second IGBT Q32, the middle terminal is the collector of the fourth IGBT Q34, and the ac side inductance terminal is the emitter of the first IGBT Q31.
It will be appreciated that the circuit structure of the other phases is the same as that of the T-type three-level A1 phase 41, and the specific connection modes of the other phases are as follows:
specifically, the T-type three-level B1 phase 42 includes a fifth IGBT tube Q35, a sixth IGBT tube Q36, a seventh IGBT tube Q37, an eighth IGBT tube Q38, a fifth diode D5, a sixth diode D6, a seventh diode D7, and an eighth diode D8.
The collector of the fifth IGBT tube Q35 is connected with the cathode of the fifth diode D5, the emitter of the fifth IGBT tube Q35 is respectively connected with the anode of the fifth diode D5, the collector of the sixth IGBT tube Q36, the cathode of the sixth diode D6, the collector of the seventh IGBT tube Q37 and the cathode of the seventh diode D7, the emitter of the sixth IGBT tube Q36 is connected with the anode of the sixth diode D6, the emitter of the seventh IGBT tube Q37 is respectively connected with the anode of the seventh diode D7, the emitter of the eighth IGBT tube Q38 and the anode of the eighth diode D8, and the collector of the eighth IGBT tube Q38 is connected with the cathode of the eighth diode D8.
In this embodiment, the positive terminal of the T-type three-level B1 phase 42 is the collector of the fifth IGBT Q35, the negative terminal is the emitter of the sixth IGBT Q36, the middle terminal is the collector of the eighth IGBT Q38, and the ac side inductance terminal is the emitter of the fifth IGBT Q35.
Specifically, the T-shaped three-level C1 phase 43 includes a ninth IGBT transistor Q39, a tenth IGBT transistor Q310, an eleventh IGBT transistor Q311, a twelfth IGBT transistor Q312, a ninth diode D9, a tenth diode D10, an eleventh diode D11, and a twelfth diode D12.
The collector of the ninth IGBT tube Q39 is connected with the cathode of the ninth diode D9, the emitter of the ninth IGBT tube Q39 is respectively connected with the anode of the ninth diode D9, the collector of the tenth IGBT tube Q310, the cathode of the twelfth diode D10, the collector of the eleventh IGBT tube Q311 and the cathode of the eleventh diode D11, the emitter of the tenth IGBT tube Q310 is connected with the anode of the twelfth diode D10, the emitter of the eleventh IGBT tube Q311 is respectively connected with the anode of the eleventh diode D11, the emitter of the twelfth IGBT tube Q312 and the anode of the twelfth diode D12, and the collector of the twelfth IGBT tube Q312 is connected with the cathode of the twelfth diode D12.
In this embodiment, the positive terminal of the T-shaped three-level C1 phase 43 is the collector of the ninth IGBT Q39, the negative terminal is the emitter of the tenth IGBT Q310, the middle terminal is the collector of the twelfth IGBT Q312, and the ac side inductance terminal is the emitter of the ninth IGBT Q39.
Specifically, the T-shaped three-level A2 phase 44 includes a thirteenth IGBT transistor Q41, a fourteenth IGBT transistor Q42, a fifteenth IGBT transistor Q43, a sixteenth IGBT transistor Q44, a thirteenth diode D13, a fourteenth diode D14, a fifteenth diode D15, and a sixteenth diode D16.
The collector of the thirteenth IGBT tube Q41 is connected with the cathode of the thirteenth diode D13, the emitter of the thirteenth IGBT tube Q41 is respectively connected with the anode of the thirteenth diode D13, the collector of the fourteenth IGBT tube Q42, the cathode of the fourteenth diode D14, the collector of the fifteenth IGBT tube Q43 and the cathode of the fifteenth diode D15, the emitter of the fourteenth IGBT tube Q42 is connected with the anode of the fourteenth diode D14, the emitter of the fifteenth IGBT tube Q43 is respectively connected with the anode of the fifteenth diode D15, the emitter of the sixteenth IGBT tube Q44 and the anode of the sixteenth diode D16, and the collector of the sixteenth IGBT tube Q44 is connected with the cathode of the sixteenth diode D16.
In this embodiment, the positive terminal of the T-type three-level A2 phase 44 is the collector of the thirteenth IGBT Q41, the negative terminal is the emitter of the fourteenth IGBT Q42, the middle terminal is the collector of the sixteenth IGBT Q44, and the ac side inductance terminal is the emitter of the thirteenth IGBT Q41.
Specifically, the T-type three-level B2 phase 45 includes a seventeenth IGBT transistor Q45, an eighteenth IGBT transistor Q46, a nineteenth IGBT transistor Q47, a twentieth IGBT transistor Q48, a seventeenth diode D17, an eighteenth diode D18, a nineteenth diode D19, and a twentieth diode D20.
The collector of the seventeenth IGBT tube Q45 is connected with the cathode of the seventeenth diode D17, the emitter of the seventeenth IGBT tube Q45 is respectively connected with the anode of the seventeenth diode D17, the collector of the eighteenth IGBT tube Q46, the cathode of the eighteenth diode D18, the collector of the nineteenth IGBT tube Q47 and the cathode of the nineteenth diode D19, the emitter of the eighteenth IGBT tube Q46 is connected with the anode of the eighteenth diode D18, the emitter of the nineteenth IGBT tube Q47 is respectively connected with the anode of the nineteenth diode D19, the emitter of the twentieth IGBT tube Q48 and the anode of the twentieth diode D20, and the collector of the twentieth IGBT tube Q48 is connected with the cathode of the twentieth diode D20.
In this embodiment, the positive terminal of the T-type three-level B2 phase 45 is the collector of the seventeenth IGBT Q45, the negative terminal is the emitter of the eighteenth IGBT Q46, the middle terminal is the collector of the twentieth IGBT Q48, and the ac-side inductance terminal is the emitter of the seventeenth IGBT Q45.
Specifically, the T-type three-level C2 phase 46 includes a twenty-first IGBT tube Q49, a twenty-second IGBT tube Q410, a twenty-third IGBT tube Q411, a twenty-fourth IGBT tube Q412, a twenty-first diode D21, a twenty-second diode D22, a twenty-third diode D23, and a twenty-fourth diode D24.
The collector of the twenty-first IGBT Q49 is connected with the cathode of the twenty-second diode D21, the emitter of the twenty-first IGBT Q49 is respectively connected with the anode of the twenty-second diode D21, the collector of the twenty-second IGBT Q410, the cathode of the twenty-second diode D22, the collector of the twenty-third IGBT Q411 and the cathode of the twenty-third diode D23, the emitter of the twenty-second IGBT Q410 is connected with the anode of the twenty-second diode D22, the emitter of the twenty-third IGBT Q411 is respectively connected with the anode of the twenty-third diode D23, the emitter of the twenty-fourth IGBT Q412 and the anode of the twenty-fourth diode D24, and the collector of the twenty-fourth IGBT Q412 is connected with the cathode of the twenty-fourth diode D24.
In this embodiment, the positive terminal of the T-type three-level C2 phase 46 is the collector of the twenty-first IGBT, the negative terminal is the emitter of the twenty-second IGBT Q410, the middle terminal is the collector of the twenty-fourth IGBT Q412, and the ac side inductance terminal is the emitter of the twenty-first IGBT Q49.
In the present embodiment, the PWM driving error phase of the IGBT tube located at the same position in each of the T-type three-level A1 phases 41 and the T-type three-level A2 phases 44 is 180 °, the PWM driving error phase of the IGBT tube located at the same position in each of the T-type three-level B1 phases 42 and the T-type three-level B2 phases 45 is 180 °, and the PWM driving error phase of the IGBT tube located at the same position in each of the T-type three-level C1 phases 43 and the T-type three-level C2 phases 46 is 180 °.
Specifically, 180 ° out of phase refers to leading or lagging 180 °.
In the present embodiment, the PWM drive offset phase 180 ° of the IGBT tube located at the same position in each of the T-shaped three-level A1 phase 41 and the T-shaped three-level A2 phase 44 indicates the PWM drive offset phase 180 ° of the first IGBT tube Q31 and the thirteenth IGBT tube Q41, the PWM drive offset phase 180 ° of the second IGBT tube Q32 and the fourteenth IGBT tube Q42, the PWM drive offset phase 180 ° of the third IGBT tube Q33 and the fifteenth IGBT tube Q43, and the PWM drive offset phase 180 ° of the fourth IGBT tube Q34 and the sixteenth IGBT tube Q44.
In this embodiment, each IGBT of the T-type three-level B1 phase 42 is 180 ° out of PWM drive of the IGBT located at the same position as the T-type three-level B2 phase 45, which means 180 ° out of PWM drive of the fifth IGBT Q35 and seventeenth IGBT Q45, 180 ° out of PWM drive of the sixth IGBT Q36 and eighteenth IGBT Q46, 180 ° out of PWM drive of the seventh IGBT Q37 and nineteenth IGBT Q47, and 180 ° out of PWM drive of the eighth IGBT Q38 and twentieth IGBT Q48.
In the present embodiment, the PWM drive offset phase 180 ° of each IGBT tube of the T-type three-level C1 phase 43 and the IGBT tube located at the same position in the T-type three-level C2 phase 46 indicates the PWM drive offset phase 180 ° of the ninth IGBT tube Q39 and the twenty-first IGBT tube Q49, the PWM drive offset phase 180 ° of the tenth IGBT tube Q310 and the twenty-second IGBT tube Q410, the PWM drive offset phase 180 ° of the eleventh IGBT tube Q311 and the twenty-third IGBT tube Q411, and the PWM drive offset phase 180 ° of the twelfth IGBT tube Q312 and the twenty-fourth IGBT tube Q412.
Example seven
The bidirectional power supply of this embodiment includes the type I three-level ACDC circuit of any one of embodiment one to embodiment three, or the type T three-level ACDC circuit of any one of embodiment four to embodiment six.
In this embodiment, the I-type three-level ACDC circuit or the T-type three-level ACDC circuit is installed in a bidirectional power supply.
The three-level A1 phase and the three-level A2 phase are connected in parallel through the first filtering module, the three-level B1 phase and the three-level B2 phase are connected in parallel through the second filtering module, the three-level C1 phase and the three-level C2 phase are connected in parallel through the third filtering module, so that ripple current pulsation of the direct current side is reduced, the heating value and the volume of a capacitor of the direct current side are reduced, the performance and the reliability of the bidirectional power supply are improved, and the whole volume of the bidirectional power supply is reduced.
Example eight
The electrical device of this embodiment includes a housing and the bi-directional power source of embodiment seven mounted within the housing.
Specifically, the electrical device may be a chassis, which includes a housing, and a bidirectional power supply is installed in the housing, so that the volume of the bidirectional power supply is reduced, and the overall volume of the chassis may also be reduced. Thus, the bidirectional power supply with the reduced volume can be adapted to more types of cabinets.
The foregoing description of the preferred embodiment of the present invention is not intended to limit the invention to the particular form disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Furthermore, the particular features, structures, materials, or characteristics described in the various embodiments or examples of the application may be combined in any suitable manner in any one or more embodiments or examples.

Claims (8)

1. A type I three-level ACDC circuit comprising:
the positive electrode of the first capacitor is connected with the positive electrode of the direct current side, the negative electrode of the first capacitor is connected with the positive electrode of the second capacitor, the negative electrode of the second capacitor is connected with the negative electrode of the direct current side, and the connecting point of the first capacitor and the second capacitor is a midpoint;
The positive ends of the I-type three-level A1 phase, the I-type three-level A2 phase, the I-type three-level B1 phase, the I-type three-level B2 phase, the I-type three-level C1 phase and the I-type three-level C2 phase are respectively provided with a positive end, a negative end, a midpoint end and an alternating current side inductance end, the positive ends of the I-type three-level A1 phase, the I-type three-level A2 phase, the I-type three-level B1 phase, the I-type three-level B2 phase, the I-type three-level C1 phase and the I-type three-level C2 phase are respectively connected with the positive electrode of the direct current side, the negative end is respectively connected with the negative electrode of the direct current side, and the midpoint end is respectively connected with the midpoint;
the first end of the first filtering module is respectively connected with one end of the power grid A phase and one end of the third capacitor, the second end of the first filtering module is connected with the alternating current side inductance end of the I-type three-level A1 phase, and the third end of the first filtering module is connected with the alternating current side inductance end of the I-type three-level A2 phase;
the first end of the second filtering module is respectively connected with one end of the power grid B phase and one end of the fourth capacitor, the second end of the second filtering module is connected with the alternating current side inductance end of the I-type three-level B1 phase, and the third end of the second filtering module is connected with the alternating current side inductance end of the I-type three-level B2 phase;
the first end of the third filtering module is respectively connected with one end of the power grid C phase and one end of the fifth capacitor, the second end of the third filtering module is connected with the alternating current side inductance end of the I-type three-level C1 phase, and the third end of the third filtering module is connected with the alternating current side inductance end of the I-type three-level C2 phase;
And the other ends of the power grid A phase, the power grid B phase, the power grid C phase, the third capacitor, the fourth capacitor and the fifth capacitor are all connected with the midpoint.
2. The type I three-level ACDC circuit of claim 1 wherein the first filter module includes a first inductor and a second inductor, the first inductor having one end connected to an ac side inductor end of the type I three-level A1 phase, the second inductor having one end connected to an ac side inductor end of the type I three-level A2 phase, the first inductor having the other end connected in parallel with the second inductor having the other end;
the first inductor and the second inductor are magnetic coupling inductors or independent inductors, and the number of turns of the first inductor and the number of turns of the second inductor are equal to the inductance;
the second filtering module comprises a third inductor and a fourth inductor, one end of the third inductor is connected with an alternating current side inductor end of the I-type three-level B1 phase, one end of the fourth inductor is connected with an alternating current side inductor end of the I-type three-level B2 phase, and the other end of the third inductor is connected with the other end of the fourth inductor in parallel;
the third inductor and the fourth inductor are magnetic coupling inductors or independent inductors, and the turns and the inductance of the third inductor and the fourth inductor are equal;
The third filtering module comprises a fifth inductor and a sixth inductor, one end of the fifth inductor is connected with an alternating current side inductor end of the I-type three-level C1 phase, one end of the sixth inductor is connected with an alternating current side inductor end of the I-type three-level C2 phase, and the other end of the fifth inductor is connected with the other end of the sixth inductor in parallel;
the fifth inductor and the sixth inductor are magnetic coupling inductors or independent inductors, and the turns and the inductance of the fifth inductor and the sixth inductor are equal.
3. The type I three-level ACDC circuit of claim 1 wherein the circuit structures of the type I three-level A1 phase, the type I three-level A2 phase, the type I three-level B1 phase, the type I three-level B2 phase, the type I three-level C1 phase, and the type I three-level C2 phase are all the same;
the I-type three-level A1 phase comprises a first IGBT, a second IGBT, a third IGBT, a fourth IGBT, a first diode, a second diode, a third diode, a fourth diode, a fifth diode and a sixth diode, wherein the collector electrode of the first IGBT is connected with the positive electrode of the direct current side and the negative electrode of the first diode, the emitter electrode of the first IGBT is respectively connected with the positive electrode of the first diode, the collector electrode of the second IGBT, the negative electrode of the second diode and the negative electrode of the fifth diode, the positive electrode of the fifth diode is respectively connected with the negative electrode of the sixth diode and the middle point, the emitter electrode of the second IGBT is respectively connected with the positive electrode of the second diode, the negative electrode of the third diode and the second end of the first filter module, and the emitter electrode of the third IGBT is respectively connected with the positive electrode of the third diode, the negative electrode of the fourth IGBT, the negative electrode of the fourth diode and the positive electrode of the fourth diode are respectively connected with the positive electrode of the fourth diode and the negative electrode of the fourth diode.
4. A T-type three-level ACDC circuit comprising:
the positive electrode of the first capacitor is connected with the positive electrode of the direct current side, the negative electrode of the first capacitor is connected with the positive electrode of the second capacitor, the negative electrode of the second capacitor is connected with the negative electrode of the direct current side, and the connecting point of the first capacitor and the second capacitor is a midpoint;
the T-type three-level A1 phase, the T-type three-level A2 phase, the T-type three-level B1 phase, the T-type three-level B2 phase, the T-type three-level C1 phase and the T-type three-level C2 phase are respectively provided with a positive electrode terminal, a negative electrode terminal, a middle point terminal and an alternating current side inductance terminal, the positive electrodes of the T-type three-level A1 phase, the T-type three-level A2 phase, the T-type three-level B1 phase, the T-type three-level B2 phase, the T-type three-level C1 phase and the T-type three-level C2 phase are respectively connected with the positive electrode of the direct current side, the negative electrode terminal is respectively connected with the negative electrode of the direct current side, and the middle point terminal is respectively connected with the middle point;
the first end of the first filtering module is respectively connected with one end of the power grid A phase and one end of the third capacitor, the second end of the first filtering module is connected with the alternating current side inductance end of the T-shaped three-level A1 phase, and the third end of the first filtering module is connected with the alternating current side inductance end of the T-shaped three-level A2 phase;
The first end of the second filtering module is respectively connected with one end of the power grid B phase and one end of the fourth capacitor, the second end of the second filtering module is connected with the alternating current side inductance end of the T-shaped three-level B1 phase, and the third end of the second filtering module is connected with the alternating current side inductance end of the T-shaped three-level B2 phase; and
the first end of the third filtering module is respectively connected with one end of the power grid C phase and one end of the fifth capacitor, the second end of the third filtering module is connected with the alternating current side inductance end of the T-shaped three-level C1 phase, and the third end of the third filtering module is connected with the alternating current side inductance end of the T-shaped three-level C2 phase;
and the other ends of the power grid A phase, the power grid B phase, the power grid C phase, the third capacitor, the fourth capacitor and the fifth capacitor are all connected with the midpoint.
5. The T-type three-level ACDC circuit of claim 4 wherein the first filter module includes a first inductor and a second inductor, one end of the first inductor being connected to an ac side inductor end of the T-type three-level A1 phase, one end of the second inductor being connected to an ac side inductor end of the T-type three-level A2 phase, the other end of the first inductor being connected in parallel with the other end of the second inductor;
The first inductor and the second inductor are magnetic coupling inductors or independent inductors, and the number of turns of the first inductor and the number of turns of the second inductor are equal to the inductance;
the second filtering module comprises a third inductor and a fourth inductor, one end of the third inductor is connected with an alternating current side inductor end of the T-shaped three-level B1 phase, one end of the fourth inductor is connected with an alternating current side inductor end of the T-shaped three-level B2 phase, and the other end of the third inductor is connected with the other end of the fourth inductor in parallel;
the third inductor and the fourth inductor are magnetic coupling inductors or independent inductors, and the turns and the inductance of the third inductor and the fourth inductor are equal;
the third filtering module comprises a fifth inductor and a sixth inductor, one end of the fifth inductor is connected with an alternating current side inductor end of the T-shaped three-level C1 phase, one end of the sixth inductor is connected with an alternating current side inductor end of the T-shaped three-level C2 phase, and the other end of the fifth inductor is connected with the other end of the sixth inductor in parallel;
the fifth inductor and the sixth inductor are magnetic coupling inductors or independent inductors, and the turns and the inductance of the fifth inductor and the sixth inductor are equal.
6. The T-type three-level ACDC circuit of claim 4 wherein the circuit structures of the T-type three-level A1 phase, the T-type three-level A2 phase, the T-type three-level B1 phase, the T-type three-level B2 phase, the T-type three-level C1 phase, and the T-type three-level C2 phase are the same;
The T-shaped three-level A1 phase comprises a first IGBT tube, a second IGBT tube, a third IGBT tube, a fourth IGBT tube, a first diode, a second diode, a third diode and a fourth diode, wherein the collector electrode of the first IGBT tube is respectively connected with the positive electrode of the direct current side and the negative electrode of the first diode, the emitter electrode of the first IGBT tube is respectively connected with the positive electrode of the first diode, the collector electrode of the second IGBT tube, the negative electrode of the second diode, the collector electrode of the third IGBT tube and the second end of the first filtering module, the emitter electrode of the second IGBT tube is respectively connected with the positive electrode of the second diode and the negative electrode of the direct current side, the emitter electrode of the third IGBT tube is connected with the collector electrode of the fourth IGBT tube, and the emitter electrode of the fourth IGBT tube is connected with the middle point.
7. A bi-directional power supply comprising a type I tri-level ACDC circuit as claimed in any of claims 1 to 3 or a T-type tri-level ACDC circuit as claimed in any of claims 4 to 6.
8. An electrical device comprising a housing and the bi-directional power supply of claim 7 mounted within the housing.
CN202310373172.2A 2023-04-10 2023-04-10 I-type and T-type three-level ACDC circuit, bidirectional power supply and electrical device Pending CN116094349A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310373172.2A CN116094349A (en) 2023-04-10 2023-04-10 I-type and T-type three-level ACDC circuit, bidirectional power supply and electrical device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310373172.2A CN116094349A (en) 2023-04-10 2023-04-10 I-type and T-type three-level ACDC circuit, bidirectional power supply and electrical device

Publications (1)

Publication Number Publication Date
CN116094349A true CN116094349A (en) 2023-05-09

Family

ID=86201107

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310373172.2A Pending CN116094349A (en) 2023-04-10 2023-04-10 I-type and T-type three-level ACDC circuit, bidirectional power supply and electrical device

Country Status (1)

Country Link
CN (1) CN116094349A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204205997U (en) * 2014-12-04 2015-03-11 艾默生网络能源有限公司 A kind of rectified three-phase circuit and uninterrupted power supply
CN105680713A (en) * 2016-04-01 2016-06-15 山东大学 A zero sequence circulating current suppression system and method for SHEPWM-based multiple T-type three-level inverters
US20160329832A1 (en) * 2014-01-15 2016-11-10 Abb Inc. Modular, multi-channel, interleaved power converters
CN115864872A (en) * 2023-01-06 2023-03-28 电子科技大学长三角研究院(湖州) Fair sequence model prediction control multi-objective optimization method for parallel T-shaped three-level rectifier

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160329832A1 (en) * 2014-01-15 2016-11-10 Abb Inc. Modular, multi-channel, interleaved power converters
CN204205997U (en) * 2014-12-04 2015-03-11 艾默生网络能源有限公司 A kind of rectified three-phase circuit and uninterrupted power supply
CN105680713A (en) * 2016-04-01 2016-06-15 山东大学 A zero sequence circulating current suppression system and method for SHEPWM-based multiple T-type three-level inverters
CN115864872A (en) * 2023-01-06 2023-03-28 电子科技大学长三角研究院(湖州) Fair sequence model prediction control multi-objective optimization method for parallel T-shaped three-level rectifier

Similar Documents

Publication Publication Date Title
CN1075277C (en) Improved EMI filter topology for power inverters
CN1076902C (en) Bridge power converter
CN1860673A (en) Converter circuit for connecting a plurality of switching voltage levels
CA2587421C (en) Converter circuit for switching of a multiplicity of switching voltage levels
CN111828325B (en) Electric compressor
CN108173442B (en) Isolated modular multilevel converter based on high-frequency chain technology
JPWO2004012325A1 (en) Power module for AC / AC power conversion
CN206452300U (en) A kind of DC DC power inverters
CN116094349A (en) I-type and T-type three-level ACDC circuit, bidirectional power supply and electrical device
CN101800478A (en) Cascade connection type power conversion device and power supply system
CN214205363U (en) Three-level inverter module
CN109088547B (en) Capacitor substrate unit for switch module
CN111541392A (en) Medium voltage converter three-level power module topology module and device
CN218549779U (en) Three-phase AC-DC bidirectional conversion circuit
CN111030477B (en) Annular layout modularized parallel half-bridge integrated assembly
CN110601581A (en) Intelligent power module, electric control device and air conditioner
JP3507911B2 (en) Power converter snubber circuit
CN114204839A (en) Coating power supply system and coating device comprising same
CN114257107A (en) NPC type three-level inverter circuit
KR20000011831A (en) Power converter
CN217984874U (en) Modular circuit of NPC _ I three-level converter and three-phase NPC-I type three-level converter
CN104967312A (en) Current control power converter
CN219086990U (en) Integrated capacitor, motor controller and motor assembly
CN219124116U (en) Laminated busbar with short commutation path and energy storage converter
CN217883246U (en) Optimization circuit of NPC-I three-level converter and three-phase NPC-I type three-level converter

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20230509