CN116094137A - Power supply redundancy control circuit based on triode - Google Patents
Power supply redundancy control circuit based on triode Download PDFInfo
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- CN116094137A CN116094137A CN202310062691.7A CN202310062691A CN116094137A CN 116094137 A CN116094137 A CN 116094137A CN 202310062691 A CN202310062691 A CN 202310062691A CN 116094137 A CN116094137 A CN 116094137A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J9/00—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting
- H02J9/04—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source
- H02J9/06—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems
- H02J9/061—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems for DC powered loads
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/30—Systems integrating technologies related to power network operation and communication or information technologies for improving the carbon footprint of the management of residential or tertiary loads, i.e. smart grids as climate change mitigation technology in the buildings sector, including also the last stages of power distribution and the control, monitoring or operating management systems at local level
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y04—INFORMATION OR COMMUNICATION TECHNOLOGIES HAVING AN IMPACT ON OTHER TECHNOLOGY AREAS
- Y04S—SYSTEMS INTEGRATING TECHNOLOGIES RELATED TO POWER NETWORK OPERATION, COMMUNICATION OR INFORMATION TECHNOLOGIES FOR IMPROVING THE ELECTRICAL POWER GENERATION, TRANSMISSION, DISTRIBUTION, MANAGEMENT OR USAGE, i.e. SMART GRIDS
- Y04S20/00—Management or operation of end-user stationary applications or the last stages of power distribution; Controlling, monitoring or operating thereof
- Y04S20/20—End-user application control systems
Abstract
The invention discloses a triode-based power supply redundancy control circuit, which comprises a redundancy MOS tube, a voltage comparison unit, a driving unit and a switching unit, wherein: the S pin of the redundant MOS tube is connected with a main power supply, and the D pin of the redundant MOS tube is connected with a load. One end of the switch unit is connected with the auxiliary source, the other end of the switch unit, the voltage comparison unit and the driving unit are sequentially connected, and the driving unit is connected with the G pin of the redundant MOS tube. The power supply redundancy control circuit based on the triode can realize the complex function of a redundancy chip through basic components, has great advantages in cost, reliability, localization and adjustability, has quicker response time of the redundancy circuit when abnormal voltage is poured into the redundancy MOS tube, has smaller driving voltage of the redundancy MOS tube when the load is smaller, has larger driving voltage of the redundancy MOS tube along with the enlargement of the load when the load is larger, has flexible strain, and can completely ensure the function of the circuit.
Description
Technical Field
The invention belongs to the field of protection circuits, and particularly relates to a triode-based power supply redundancy control circuit.
Background
At present, the requirements of many application scenes on the reliability of power supply are higher and higher, especially in severe application scenes such as military field, aerospace field, deep sea field and the like, the reliability of power supply is crucial to the operation of equipment, so that the switching power supply in the related field often adopts a 1+1 or n+1 parallel redundancy operation mode to improve the reliability of power supply of the equipment.
The power supply redundant circuit under the prior art is a diode or a redundant chip to realize related functions, the voltage drop of the diode is difficult to promote in the aspects of efficiency and thermal design, the chip is limited by inherent characteristics, unique functions such as a closing threshold value of reverse voltage, closing time of the reverse voltage and the like can not be changed on personalized products, and under the condition of the current localization trend, the modular localization of the redundant circuit is difficult to realize, even if localization is realized, on one hand, the cost is high, and on the other hand, the reliability is difficult to ensure.
Disclosure of Invention
The invention aims to solve the problems in the background art and provides a triode-based power supply redundancy control circuit.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
the invention provides a triode-based power supply redundancy control circuit, which comprises a redundancy MOS tube, a voltage comparison unit, a driving unit and a switching unit, wherein:
the S pin of the redundant MOS tube is connected with a main power supply, and the D pin of the redundant MOS tube is connected with a load.
One end of the switching unit is connected with an auxiliary source, the other end of the switching unit, the voltage comparison unit and the driving unit are sequentially connected, the driving unit is connected with the G pin of the redundant MOS tube, and the voltage comparison unit is respectively connected with the S pin and the D pin of the redundant MOS tube.
When the load is abnormal, the voltage comparison unit compares the voltages of the S pin and the D pin of the redundant MOS tube and feeds a result back to the driving unit, and the driving unit closes the driving voltage of the G pin of the redundant MOS tube, so that the main power supply of the S pin of the redundant MOS tube is protected, and the switching unit is used for preventing the voltage of the auxiliary source from being poured into the D pin of the redundant MOS tube when the output end of the main power supply is closed.
Preferably, the voltage comparing unit comprises an NPN type triode V5, an NPN type triode V6, a resistor R4, a diode V1 and a diode V2, one end of the resistor R4 is respectively connected with the switch unit and the driving unit, the other end of the resistor R4 is connected to the anode of the diode V1, the cathode of the diode V1 is respectively connected to the pin B and the pin E of the NPN type triode V5 and the pin B of the NPN type triode V6, the pin B and the pin E of the NPN type triode V5 are in short circuit, the anode of the diode V2 is connected with the driving unit, the cathode of the diode V2 is connected to the pin C of the NPN type triode V6, the pin E of the NPN type triode V6 is connected with the pin S of the redundancy MOS tube, and the pin C of the NPN type triode V5 is connected with the pin D of the redundancy MOS tube.
Preferably, the driving unit includes an NPN type triode V7, a PNP type triode V8, a resistor R5, a resistor R6, a resistor R7, a capacitor C1 and a capacitor C2, one end of the resistor R6 is connected to one end of the capacitor C1, one end of the resistor R5, one end of the resistor R4 and the switching unit, the other end of the resistor R6 is connected to one end of the resistor R7, the other end of the capacitor C1, an anode of the diode V2, one end of the capacitor C2, a B pin of the NPN type triode V7 and a B pin of the PNP type triode V8, the other end of the resistor R7 is connected to the other end of the capacitor C2, a C pin of the PNP type triode V8 and an S pin of the redundancy MOS transistor, the C pin of the NPN type triode V7 is connected to the other end of the resistor R5, and the E pin of the NPN type triode V7 is connected to the E pin of the PNP type triode V8 and the G pin of the redundancy MOS transistor, respectively.
Preferably, the switch unit includes an N-channel MOS tube V10, a P-channel MOS tube V9, a resistor R1, a resistor R2, and a resistor R3, a D pin of the P-channel MOS tube V9 is connected with one end of the resistor R4 and one end of the resistor R6, an S pin of the P-channel MOS tube V9 is connected to a supply voltage of an auxiliary source and one end of the resistor R1, a G pin of the P-channel MOS tube V9 is connected to the other end of the resistor R1 and one end of the resistor R2, the other end of the resistor R2 is connected to the D pin of the N-channel MOS tube V10, a G pin of the N-channel MOS tube V10 is connected to one end of the resistor R3, the other end of the resistor R3 is connected to an enable control end, and the S pin of the N-channel MOS tube V10 is connected to an output ground.
Preferably, the switch unit includes a PNP type triode V3, an NPN type triode V4, a resistor R1, a resistor R2 and a resistor R3, an E pin of the PNP type triode V3 is connected with one end of the resistor R4 and one end of the resistor R6, a C pin of the PNP type triode V3 is connected to a supply voltage of the auxiliary source and one end of the resistor R1, a B pin of the PNP type triode V3 is connected to the other end of the resistor R1 and one end of the resistor R2, the other end of the resistor R2 is connected to a C pin of the NPN type triode V4, a B pin of the NPN type triode V4 is connected to one end of the resistor R3, the other end of the resistor R3 is connected to an enable control end, and the E pin of the NPN type triode V4 is connected to an output ground.
Preferably, the enabling control terminal is an MCU chip.
Compared with the prior art, the invention has the beneficial effects that:
the power supply redundancy control circuit based on the triode can realize the complex function of a redundancy chip through basic components, has great advantages in cost, reliability, localization and adjustability, has quicker response time of the redundancy circuit when abnormal voltage is poured into the redundancy MOS tube, has smaller driving voltage of the redundancy MOS tube when the load is smaller, has larger driving voltage of the redundancy MOS tube along with the enlargement of the load when the load is larger, has flexible strain, and can completely ensure the function of the circuit.
Drawings
FIG. 1 is a block diagram of a triode-based power supply redundancy control circuit of the present invention;
FIG. 2 is a main circuit of the power output of the present invention;
FIG. 3 is a circuit diagram of an embodiment 1 of a triode-based power supply redundancy control circuit according to the present invention;
fig. 4 is a circuit diagram of implementation 2 of the triode-based power redundancy control circuit of the present invention.
Detailed Description
The following description of the technical solutions in the embodiments of the present application will be made clearly and completely with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
Example 1
As shown in fig. 1-3, a triode-based power supply redundancy control circuit comprises a redundancy MOS tube 1, a voltage comparison unit 2, a driving unit 3 and a switching unit 4, wherein:
the S pin of the redundant MOS tube 1 is connected with a main power supply, and the D pin of the redundant MOS tube 1 is connected with a load.
One end of the switch unit 4 is connected with an auxiliary source, the other end of the switch unit 4, the voltage comparison unit 2 and the driving unit 3 are sequentially connected, the driving unit 3 is connected with the G pin of the redundancy MOS tube 1, and the voltage comparison unit 2 is respectively connected with the S pin and the D pin of the redundancy MOS tube 1.
When the load is abnormal, the voltage comparison unit 2 compares the voltages of the S pin and the D pin of the redundant MOS tube 1, and feeds back the result to the driving unit 3, and the driving unit 3 closes the driving voltage of the S pin of the redundant MOS tube 1, so that the main power supply of the S pin of the redundant MOS tube 1 is protected, and the switch unit 4 is used for preventing the voltage of the auxiliary source from being poured into the D pin of the redundant MOS tube 1 when the output end of the main power supply is closed.
The voltage comparison unit 2 comprises an NPN type triode V5, an NPN type triode V6, a resistor R4, a diode V1 and a diode V2, one end of the resistor R4 is respectively connected with the switch unit 4 and the driving unit 3, the other end of the resistor R4 is connected to the anode of the diode V1, the cathode of the diode V1 is respectively connected to the pin B and the pin E of the NPN type triode V5 and the pin B of the NPN type triode V6, the pin B and the pin E of the NPN type triode V5 are in short circuit, the anode of the diode V2 is connected with the driving unit 3, the cathode of the diode V2 is connected to the pin C of the NPN type triode V6, the pin E of the NPN type triode V6 is connected with the pin S of the redundancy MOS tube, and the pin C of the NPN type triode V5 is connected with the pin D of the redundancy MOS tube.
The driving unit 3 includes an NPN-type transistor V7, a PNP-type transistor V8, a resistor R5, a resistor R6, a resistor R7, a capacitor C1, and a capacitor C2, one end of the resistor R6 is connected to one end of the capacitor C1, one end of the resistor R5, one end of the resistor R4, and the switching unit 4, the other end of the resistor R6 is connected to one end of the resistor R7, the other end of the capacitor C1, an anode of the diode V2, one end of the capacitor C2, a B-pin of the NPN-type transistor V7, and a B-pin of the PNP-type transistor V8, the other end of the resistor R7 is connected to the other end of the capacitor C2, a C-pin of the PNP-type transistor V8, and an S-pin of the redundancy MOS transistor, respectively, the E-pin of the NPN-type transistor V7 is connected to the E-pin of the PNP-type transistor V8 and the G-pin of the redundancy MOS transistor, respectively (shown as MOS driving in fig. 2-4).
The switch unit 4 comprises an N-channel MOS tube V10, a P-channel MOS tube V9, a resistor R1, a resistor R2 and a resistor R3, wherein a D pin of the P-channel MOS tube V9 is connected with one end of the resistor R4 and one end of the resistor R6, an S pin of the P-channel MOS tube V9 is connected with a power supply voltage of an auxiliary source and one end of the resistor R1, a G pin of the P-channel MOS tube V9 is respectively connected with the other end of the resistor R1 and one end of the resistor R2, the other end of the resistor R2 is connected with the D pin of the N-channel MOS tube V10, a G pin of the N-channel MOS tube V10 is connected with one end of the resistor R3, the other end of the resistor R3 is connected with an enabling control end, and the S pin of the N-channel MOS tube V10 is connected with output ground.
It should be noted that, the redundant power supply generally exists in the form of 1+1 or n+1, and is a schematic diagram of a power supply circuit, when one of the power supply circuits is abnormal or turned off (i.e. when the load is abnormal, the load connected to the pin D of the redundant MOS tube in fig. 1 is equivalent to another power supply circuit connected to the power supply circuit), at this time, the output voltage of the redundant MOS tube is higher than the normal voltage, the voltage of the pin D of the redundant MOS tube is compared with the voltage of the pin S by the voltage comparing unit 2, the voltage of the pin S is higher than the voltage of the pin D in normal time, the voltage of the pin S is lower than the voltage of the pin D in abnormal time, the voltage comparing unit 2 feeds back the comparison result to the driving unit 3, and the driving unit 3 immediately turns off the driving voltage of the pin G of the redundant MOS tube, thereby protecting the main power supply at the pin S of the redundant MOS tube, and the driving voltage of the pin G of the redundant MOS tube is recovered to be normal when the abnormality is relieved. The switch unit 4 mainly prevents the voltage of the auxiliary source from being poured into the output end of the power circuit when the output end of the main power supply is closed.
Specifically, fig. 2 is an output main loop of the power supply, the D pin of the redundant MOS transistor is an external output end (corresponding to the input voltage end in fig. 1) of the main power supply and is connected to the load, and the S pin of the redundant MOS transistor is an input end (corresponding to the output voltage end in fig. 1) of the main power supply.
As shown in fig. 3, the supply voltage of the auxiliary source is the connection of the auxiliary source in fig. 1, the driving voltage (i.e., pin G) of the redundant MOS transistor needs to be higher than the output voltage of the power supply circuit, the resistors R1 and R2 have a voltage dividing effect on the driving voltage of the MOS transistor, V9 is a P-MOSFET transistor, V10 is an N-MOSFET transistor, when the enabling control end sends out a low level, the N-channel MOS transistor V10 is turned off to cut off the power supply of the redundant circuit, when the enabling control end sends out a high level, the N-channel MOS transistor V10 is turned on, the resistor R3 has a current limiting effect on the N-channel MOS transistor V10, the driving voltage of the pin G of the P-channel MOS transistor V9 is reduced, so that the P-channel MOS transistor V9 is turned on, wherein the enabling control end is generally controlled by the output pin of the MCU, because when the output end of the main power supply is turned off, the voltage of the auxiliary power supply is poured into the power supply circuit to generate an abnormal voltage, and then the voltage is divided into two paths, when one path reaches the two paths of the voltage comparison pins of the redundant circuit through the resistor R4, the diode V1, the NPN transistor V35, the NPN transistor V5, and the whole voltage of the transistor V6 reaches the redundant circuit 35. The other path passes through the resistor R5 and the resistor R6 to form a driving circuit of the redundant MOS tube, the driving circuit is divided into two paths, one path of current passes through the resistor R5, the C, E pin of the NPN type triode V7 and the C, E pin of the PNP type triode V8 to form a main loop driven by the redundant MOS tube, wherein the resistor R5 plays a current limiting role in the circuit, meanwhile, the resistor R5 and the NPN type triode V7 form a role of adjusting the driving voltage of the redundant MOS tube, the other path of current can feed back the comparison result of the voltages at two ends of the D, S pin of the redundant MOS tube when passing through the resistor R6, the diode V2 and the B, E pin of the NPN type triode V6, the current of the B, E pin of the NPN type triode V7 and the current of the B, E pin of the PNP type triode V8 are pumped through the B, E pin of the NPN type triode V6, the magnitude of the pumped current determines the current magnitude of the C, E pin of the NPN type triode V7 because the NPN type triode V7 is in an amplifying state, the voltage is reflected by the resistor R5, and the voltage of the voltage is regulated, and the voltage of the voltage is dependent on the upper limit of the voltage of the redundant MOS tube and the driving voltage R6 is regulated. Finally, the comparison circuit and the driving circuit are integrated to achieve the function of the redundant circuit.
Example 2
Based on embodiment 1, in this embodiment, the switch unit 4 includes a PNP type triode V3, an NPN type triode V4, a resistor R1, a resistor R2, and a resistor R3, an E pin of the PNP type triode V3 is connected to one end of the resistor R4 and one end of the resistor R6, a C pin of the PNP type triode V3 is connected to a supply voltage of an auxiliary source and one end of the resistor R1, a B pin of the PNP type triode V3 is connected to the other end of the resistor R1 and one end of the resistor R2, the other end of the resistor R2 is connected to a C pin of the NPN type triode V4, a B pin of the NPN type triode V4 is connected to one end of the resistor R3, the other end of the resistor R3 is connected to an enable control end, and the E pin of the NPN type triode V4 is connected to an output ground.
Specifically, as shown in fig. 4, V3 of the switching unit 4 is a PNP transistor, and V4 is an NPN transistor.
The driving voltage of the redundant MOS tube needs to be higher than the output voltage of the power supply circuit, the resistors R1 and R2 play a role in dividing the driving voltage of the redundant MOS tube, when the enabling control end sends out a low level, the NPN type triode V4 is turned off, the power supply of the redundant circuit is cut off, when the enabling control end sends out a high level, the NPN type triode V4 is turned on, the resistor R3 plays a role in limiting the current for the driving of the NPN type triode V4, the driving voltage of the G pin of the PNP type triode V3 is reduced, so that the PNP type triode V3 is turned on, the enabling control end is generally controlled by the output pin of the MCU chip, the power supply of the redundant circuit is controlled, because when the output of the main power supply is turned off, the voltage of the auxiliary power supply is poured into the output end of the power supply circuit to generate abnormal voltage, then the voltage is divided into two paths, one path passes through the resistor R4, the diode V1, the pin B, E of the NPN type triode V5, and the pin B of the NPN type triode V6 reach the S pin of the redundant MOS tube, and the function in the whole circuit is a comparison circuit, and the function is to compare the voltages of the two ends of the pins D, S of the redundant MOS tube. The other path passes through the resistor R5 and the resistor R6 to form a driving circuit of the redundant MOS tube, the driving circuit is divided into two paths, one path of current passes through the resistor R5, the C, E pin of the NPN type triode V7 and the C, E pin of the PNP type triode V8 to form a main loop driven by the redundant MOS tube, wherein the resistor R5 plays a current limiting role in the circuit, meanwhile, the resistor R5 and the NPN type triode V7 form a role of adjusting the driving voltage of the redundant MOS tube, the other path of current can feed back the comparison result of the voltages at two ends of the D, S pin of the redundant MOS tube when passing through the resistor R6, the diode V2 and the B, E pin of the NPN type triode V6, the current of the B, E pin of the NPN type triode V7 and the current of the B, E pin of the PNP type triode V8 are pumped through the B, E pin of the NPN type triode V6, the magnitude of the pumped current determines the current magnitude of the C, E pin of the NPN type triode V7 because the NPN type triode V7 is in an amplifying state, the voltage is reflected by the resistor R5, and the voltage of the voltage is regulated, and the voltage of the voltage is dependent on the upper limit of the voltage of the redundant MOS tube and the driving voltage R6 is regulated. Finally, the comparison circuit and the driving circuit are integrated to achieve the function of the redundant circuit.
The working principle of the power redundancy control circuit based on the triode is as follows:
firstly, the switching unit 4 of the redundant circuit is used for controlling the on-off of the power supply voltage of the redundant circuit, when the output of the main power supply is turned off, the voltage of the auxiliary source is infused into the output end of the power supply circuit to generate abnormal voltage, then the CE pin voltage drop generated by the B, E pin short circuit of the NPN type triode V5 is compared with the BE pin voltage drop of the NPN type triode V6, the comparison result of the voltages at two ends of the D, S pin of the redundant MOS transistor is fed back to the E, C voltage drop generated by the B, E pin of the NPN type triode V5 and the B, E pin of the NPN type triode V6, when the E, C pin voltage drop of the NPN type triode V5 is larger than the B, E pin voltage drop of the NPN type triode V6, the current flowing through the B, E pin of the NPN type triode V6 is more, because the current flowing through the E, C pin of the NPN type triode V6 is in an amplifying state, the voltage drop across the resistor R5 and the NPN transistor V7 will decrease, and the driving voltage of the redundant MOS transistor will increase, whereas when the voltage drop across the resistor R5 and the NPN transistor V7 and the voltage drop across the resistor R7 are close to and smaller than the voltage drop across the pin B, E of the NPN transistor V6, the current flowing through the pin B, E of the NPN transistor V6 will decrease, and the current flowing through the pin C, E of the NPN transistor V6 will decrease due to the amplified state of the NPN transistor V6, the voltage drop across the resistor R5 and the NPN transistor V7 will increase, and the driving voltage of the redundant MOS transistor will decrease until no driving voltage is reached, and under normal conditions, the voltage of the pin D of the redundant MOS transistor will decrease compared with the voltage of the pin S, and the absolute value of the voltage will increase with the increase of the load, the voltage drop of a E, C pin of the NPN triode V5 is larger than the voltage drop of a B, E pin of the NPN triode V6, so that the driving voltage of the redundant MOS tube is larger and larger, when the voltage of a D pin of the redundant MOS tube is abnormal, the voltage of the D pin is higher than that of an S pin, the voltage drop of a E, C pin of the NPN triode V5 is smaller than the voltage drop of a B, E pin of the NPN triode V6, and the driving voltage of the redundant MOS tube is directly disappeared.
The power supply redundancy control circuit based on the triode can realize the complex function of a redundancy chip through basic components, has great advantages in cost, reliability, localization and adjustability, can realize tens of uS in response time of the redundancy circuit when abnormal voltage is poured into the redundancy MOS tube, has quicker response time, has smaller driving voltage (adjustable at about 3V) of the redundancy MOS tube when the load is smaller, has larger driving voltage of the redundancy MOS tube along with the enlargement of the load, has flexible strain, and can completely ensure the function of the circuit.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above-described embodiments are merely representative of the more specific and detailed embodiments described herein and are not to be construed as limiting the claims. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (6)
1. A triode-based power supply redundancy control circuit is characterized in that: the triode-based power supply redundancy control circuit comprises a redundancy MOS tube (1), a voltage comparison unit (2), a driving unit (3) and a switching unit (4), wherein:
the S pin of the redundant MOS tube (1) is connected with a main power supply, and the D pin of the redundant MOS tube (1) is connected with a load;
one end of the switch unit (4) is connected with an auxiliary source, the other end of the switch unit (4), the voltage comparison unit (2) and the driving unit (3) are sequentially connected, the driving unit (3) is connected with a G pin of the redundant MOS tube (1), and the voltage comparison unit (2) is respectively connected with an S pin and a D pin of the redundant MOS tube (1);
when the load is abnormal, the voltage comparison unit (2) compares the voltages of the S pin and the D pin of the redundant MOS tube (1), and feeds back the result to the driving unit (3), the driving unit (3) closes the driving voltage of the G pin of the redundant MOS tube (1), so that the main power supply of the S pin of the redundant MOS tube (1) is protected, and the switching unit (4) is used for preventing the voltage of the auxiliary source from being poured into the D pin of the redundant MOS tube (1) when the output end of the main power supply is closed.
2. The transistor-based power redundancy control circuit of claim 1, wherein: the voltage comparison unit (2) comprises an NPN triode V5, an NPN triode V6, a resistor R4, a diode V1 and a diode V2, one end of the resistor R4 is respectively connected with the switch unit (4) and the driving unit (3), the other end of the resistor R4 is connected to the anode of the diode V1, the cathode of the diode V1 is respectively connected to the pin B, the pin E and the pin B of the NPN triode V5 and the pin B of the NPN triode V6, the pin B and the pin E of the NPN triode V5 are in short circuit, the anode of the diode V2 is connected with the driving unit (3), the cathode of the diode V2 is connected to the pin C of the NPN triode V6, the pin E of the NPN triode V6 is connected with the pin S of the redundancy MOS tube, and the pin C of the NPN triode V5 is connected with the pin D of the redundancy MOS tube.
3. The transistor-based power redundancy control circuit of claim 2, wherein: the driving unit (3) comprises an NPN triode V7, a PNP triode V8, a resistor R5, a resistor R6, a resistor R7, a capacitor C1 and a capacitor C2, one end of the resistor R6 is connected to one end of the capacitor C1, one end of the resistor R5, one end of the resistor R4 and a switching unit (4), the other end of the resistor R6 is respectively connected to one end of the resistor R7, the other end of the capacitor C1, an anode of the diode V2, one end of the capacitor C2, a pin B of the NPN triode V7 and a pin B of the PNP triode V8, the other end of the resistor R7 is respectively connected to the other end of the capacitor C2, a pin C of the PNP triode V8 and a pin S of the redundancy MOS tube, and a pin E of the NPN triode V7 is respectively connected to a pin E of the PNP triode V8 and a pin G of the redundancy MOS tube.
4. The transistor-based power redundancy control circuit of claim 3, wherein: the switch unit (4) comprises an N-channel MOS tube V10, a P-channel MOS tube V9, a resistor R1, a resistor R2 and a resistor R3, wherein a D pin of the P-channel MOS tube V9 is connected with one end of the resistor R4 and one end of the resistor R6, an S pin of the P-channel MOS tube V9 is connected with a power supply voltage of an auxiliary source and one end of the resistor R1, a G pin of the P-channel MOS tube V9 is respectively connected with the other end of the resistor R1 and one end of the resistor R2, the other end of the resistor R2 is connected with a D pin of the N-channel MOS tube V10, a G pin of the N-channel MOS tube V10 is connected with one end of the resistor R3, the other end of the resistor R3 is connected with an enabling control end, and the S pin of the N-channel MOS tube V10 is connected with output ground.
5. The transistor-based power redundancy control circuit of claim 3, wherein: the switching unit (4) comprises a PNP type triode V3, an NPN type triode V4, a resistor R1, a resistor R2 and a resistor R3, wherein an E pin of the PNP type triode V3 is connected with one end of the resistor R4 and one end of the resistor R6, a C pin of the PNP type triode V3 is connected with the power supply voltage of an auxiliary source and one end of the resistor R1, a B pin of the PNP type triode V3 is respectively connected with the other end of the resistor R1 and one end of the resistor R2, the other end of the resistor R2 is connected with a C pin of the NPN type triode V4, the B pin of the NPN type triode V4 is connected with one end of the resistor R3, and the other end of the resistor R3 is connected with an enabling control end, and the E pin of the NPN type triode V4 is connected with output ground.
6. The transistor-based power redundancy control circuit of claim 4 or 5, wherein: the enabling control end is an MCU chip.
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