CN116092953B - Wafer bonding device and method and composite substrate assembly - Google Patents
Wafer bonding device and method and composite substrate assembly Download PDFInfo
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- CN116092953B CN116092953B CN202310207458.3A CN202310207458A CN116092953B CN 116092953 B CN116092953 B CN 116092953B CN 202310207458 A CN202310207458 A CN 202310207458A CN 116092953 B CN116092953 B CN 116092953B
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 title claims abstract description 26
- 239000002131 composite material Substances 0.000 title claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 109
- 230000008021 deposition Effects 0.000 claims abstract description 106
- 238000010438 heat treatment Methods 0.000 claims abstract description 39
- 230000007246 mechanism Effects 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 34
- 238000003825 pressing Methods 0.000 claims abstract description 23
- 238000004891 communication Methods 0.000 claims abstract description 19
- 230000003213 activating effect Effects 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims description 35
- 230000004913 activation Effects 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 15
- 238000010521 absorption reaction Methods 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 34
- 150000002500 ions Chemical class 0.000 description 12
- 238000000429 assembly Methods 0.000 description 6
- 230000000712 assembly Effects 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000010265 fast atom bombardment Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7515—Means for applying permanent coating, e.g. in-situ coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8334—Bonding interfaces of the layer connector
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- General Physics & Mathematics (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The invention relates to the technical field of semiconductor device manufacturing, and discloses a wafer bonding device, a wafer bonding method and a composite substrate assembly. The wafer bonding device comprises a deposition chamber, a vacuumizing unit, a bonding chamber, a communication mechanism and a pressing driving mechanism, wherein the vacuumizing unit can vacuumize the deposition chamber and the bonding chamber, a carrier assembly for supporting and heating a sample is arranged in the deposition chamber, and the air supply unit can supply process air to the deposition chamber so as to deposit a transparent and non-conductive intermediate layer on the surface of the sample; the connecting mechanism can connect the bonding chamber with the deposition chamber, the bonding chamber is internally provided with an upper pressure head assembly and a lower pressure head assembly for supporting the sample, and the bonding chamber is also provided with an activating assembly for activating the surface of the sample, and the pressing driving mechanism can drive the upper pressure head assembly and the lower pressure head assembly to press. The wafer bonding device and the method are characterized in that a transparent and non-conductive intermediate layer is deposited on the surface of a sample, and then the intermediate layer is activated, so that the sample can be bonded at a low temperature, and the light transmittance and the insulativity of the bonded composite substrate assembly are not affected.
Description
Technical Field
The present invention relates to the field of semiconductor device manufacturing technology, and in particular, to a wafer bonding apparatus, a wafer bonding method, and a composite substrate assembly.
Background
With the increasing demands on integrated circuits, semiconductor materials such as germanium, gallium arsenide, silicon carbide, and the like are increasingly used. And bonding can combine two or more materials (or structures) into one body, which is an essential element in the semiconductor manufacturing process. Wafer bonding in the bonding field refers to the process of tightly bonding two mirror polished homogeneous or heterogeneous wafers by chemical and physical actions, wherein after the wafers are bonded, atoms at the interface react under the action of external force to form covalent bonds to be bonded together, and the bonding interface reaches a specific bonding strength.
The traditional high-temperature wafer bonding method is not suitable for some temperature sensitive devices or materials with larger difference of thermal expansion coefficients any more, and the surface activation bonding mainly depends on the atomic level clean surface to have extremely high activity, is easy to bond at low temperature or even room temperature, and has wide application prospect in the fields of integrated circuit manufacturing, micro-electromechanical system packaging, multifunctional chip integration and the like. The surface activation bonding equipment at the present stage is mainly a standard surface activation room temperature bonding process route, specifically, the silicon layer is firstly sputtered on the sample in situ, and then the two samples are bonded to form the device, but the sputtered silicon layer causes the device to lose optical permeability, so that the specific use requirement is difficult to meet.
Accordingly, there is a need for a wafer bonding apparatus, method and composite substrate assembly that solve the above-mentioned problems.
Disclosure of Invention
The invention aims to provide a wafer bonding device, a wafer bonding method and a composite substrate assembly, wherein a transparent and non-conductive intermediate layer is deposited on the surface of a sample, and then the intermediate layer is subjected to activation treatment, so that the two samples can be bonded reliably at a low temperature, and the light transmittance and the insulativity of the bonded composite substrate assembly are not affected.
To achieve the purpose, the invention adopts the following technical scheme:
a wafer bonding apparatus, comprising:
the vacuum-pumping unit can vacuum the deposition chamber, a carrier assembly is arranged in the deposition chamber, the carrier assembly can support a sample and heat the sample, and the deposition chamber is provided with an air inlet and an air outlet;
a gas supply unit in communication with the gas inlet, the gas supply unit capable of supplying a process gas and an inert gas into the deposition chamber to deposit an intermediate layer on the sample surface, the intermediate layer being transparent and non-conductive;
the bonding chamber is connected with the bonding chamber and can be selectively communicated with the deposition chamber, the vacuumizing unit can vacuumize the bonding chamber, an upper pressure head assembly, a lower pressure head assembly and an activating assembly are arranged in the bonding chamber, the upper pressure head assembly and the lower pressure head assembly are arranged up and down oppositely and can respectively fix the sample, and the activating assembly is used for activating the surfaces of the samples on the upper pressure head assembly and the lower pressure head assembly;
and the pressing driving mechanism can drive the upper pressing head assembly to press the lower pressing head assembly downwards so as to bond the two samples.
As an alternative, the material of the intermediate layer is TiO 2 、Al 2 O 3 、SiO 2 、HfO 2 One or a combination of two or more materials.
As an alternative, the thickness of the intermediate layer is 0.5nm to 100nm.
As an alternative, a first electrode assembly is disposed in the deposition chamber, the first electrode assembly is used for generating plasma, and the voltage range that the first electrode assembly can apply is 200 v-380 v, and the power range is 50-300W.
As an alternative scheme, the carrier assembly comprises a carrier body, a rotating shaft, a first heating element and a rotary driving element, wherein a plurality of bearing positions are arranged on the carrier body, the first heating element is correspondingly arranged at each bearing position, each bearing position is correspondingly used for bearing one sample, the carrier body is fixedly connected with the rotating shaft, the rotary driving element can drive the rotating shaft to rotate, and the air inlet is arranged through the rotating shaft; and/or
The exhaust port is provided with a plurality of exhaust ports.
As an alternative, the communication mechanism includes an intermediate chamber, a first valve capable of communicating the deposition chamber with the intermediate chamber, and a second valve capable of communicating the intermediate chamber with the bonding chamber;
the wafer bonding device further comprises a manipulator, the manipulator is arranged in the middle chamber, and the execution end of the manipulator can respectively extend into the deposition chamber and the bonding chamber so as to place a sample on the carrier assembly, place the sample on the carrier assembly on the upper pressure head assembly or the lower pressure head assembly and take down the sample on the upper pressure head assembly or the lower pressure head assembly.
As an alternative scheme, the upper pressure head assembly comprises an upper pressure head body, a second heating element and a first static absorbing element which are sequentially connected, the upper pressure head body is connected with the pressing driving mechanism, the first static absorbing element can absorb and fix a sample, and the second heating element can heat the sample absorbed by the first static absorbing element; and/or
The lower pressure head assembly comprises a lower pressure head body, a third heating piece and a second electrostatic absorption piece which are sequentially connected, wherein the lower pressure head body is fixed in the bonding cavity, the second electrostatic absorption piece can absorb and fix a sample, and the third heating piece can heat the sample absorbed by the second electrostatic absorption piece.
As an alternative, the activating assembly includes:
an ion source for bombarding a surface of the sample to which the upper ram assembly and the lower ram assembly are secured; and/or
And a second electrode assembly for generating plasma.
As an alternative, the wafer bonding apparatus described above is used, and includes the steps of:
placing at least two samples on the stage assembly of the deposition chamber and evacuating the deposition chamber;
the stage assembly heats the sample to a preset temperature;
introducing process gas into the deposition cavity by a preset process to deposit a transparent and non-conductive intermediate layer on the surface of the sample, wherein the intermediate layer is TiO (titanium dioxide) 2 、Al 2 O 3 、SiO 2 、HfO 2 One or a combination of two or more of the above, each material layer has a thickness of 0.5nm to 100nm, and the total thickness of the intermediate layer is not more than 200nm;
introducing inert gas into the deposition chamber to replace the process gas;
operating the communication mechanism to enable the bonding chamber to be communicated with the deposition chamber, and sending a sample deposited with an intermediate layer in the deposition chamber into the bonding chamber and correspondingly fixing the sample on the upper pressure head assembly and the lower pressure head assembly;
operating the communication mechanism to close the bonding chamber;
evacuating the bonding chamber and activating the sample surface by the activation assembly;
closing the activation assembly, and driving the upper pressure head assembly to press the lower pressure head assembly downwards by the pressing driving mechanism and keeping pressure;
the upper pressure head assembly or the lower pressure head assembly is loose to fix the corresponding sample, and the pressing driving mechanism drives the upper pressure head assembly to lift.
As an alternative, the preset process may be one of low pressure chemical vapor deposition, atomic deposition, and plasma enhanced chemical vapor deposition.
The composite substrate assembly is manufactured by adopting the wafer bonding method, and comprises a first base plate and a second base plate, wherein a first deposition layer and a second deposition layer are respectively formed on the surfaces of the first base plate and the second base plate facing each other, the first deposition layer and the second deposition layer are bonded to form an intermediate layer, and the intermediate layer is TiO 2 、Al 2 O 3 、SiO 2 、HfO 2 Is present in the range of + -3 nm of the bonding interface of the first deposited layer and the second deposited layer.
As an alternative, the element enriched at the bonding interface is one of Ar and O, ti, al, si, hf, and the atomic concentration of Ar is not more than 5%.
The invention has the beneficial effects that:
when the wafer bonding device is used, at least two samples to be bonded are firstly placed on a carrying platform assembly of a deposition chamber, the deposition chamber is pumped to a proper vacuum degree through a vacuumizing unit, then the carrying platform assembly heats the samples to a proper temperature, then a process gas is introduced into the deposition chamber through a gas supply unit, so that a transparent and non-conductive intermediate layer is deposited on the surfaces of the samples, then the process gas in the deposition chamber is discharged and communicated with the bonding chamber through a communication mechanism, so that the samples with the intermediate layer deposited in the deposition chamber are respectively fixed on an upper pressure head assembly and a lower pressure head assembly, then the surface activation treatment is carried out on the intermediate layer of the samples on the upper pressure head assembly and the lower pressure head assembly through an activation assembly, and finally the upper pressure head assembly is driven to be pressed and maintained by a pressing driving mechanism, so that the bonding of the samples can be realized. According to the wafer bonding device, the intermediate layer which is easy to bond can be deposited on the surface of the sample through the deposition chamber and the structure in the deposition chamber, and then the surface of the sample is activated through the activation assembly, so that the reliable bonding of two samples in a low-temperature environment can be realized, and the introduced intermediate layer is transparent and non-conductive, so that the insulation property and the light transmittance of a bonded device are not adversely affected.
According to the wafer bonding method, by adopting the wafer bonding device, two samples can be bonded reliably at low temperature, and the light transmittance and the insulativity of a bonded device are not affected.
The composite substrate assembly is manufactured by adopting the wafer bonding method, and the light transmittance and the insulativity of the bonded device are not affected.
Drawings
FIG. 1 is a schematic view of a wafer bonding apparatus according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of a bonding chamber provided in accordance with an embodiment of the present invention.
In the figure:
1. a deposition chamber; 11. an air inlet; 12. an exhaust port;
21. a stage assembly; 211. a carrier body; 212. a rotating shaft; 213. a first heating member; 22. a first electrode assembly;
3. a bonding chamber;
4. a communication mechanism; 41. an intermediate chamber; 42. a first valve; 43. a second valve;
51. an upper ram assembly; 511. an upper ram body; 512. a second heating member; 513. a first electrostatic absorption member; 52. a lower ram assembly; 521. a lower ram body; 522. a third heating member; 523. a second electrostatic absorption member; 53. an activation assembly; 531. an ion source; 532. a second electrode assembly;
6. and (3) a sample.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
In the description of the present invention, unless explicitly stated and limited otherwise, the terms "connected," "connected," and "fixed" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
In the description of the present embodiment, the terms "upper", "lower", "right", etc. orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are merely for convenience of description and simplicity of operation, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the invention. Furthermore, the terms "first," "second," and the like, are used merely for distinguishing between descriptions and not for distinguishing between them.
The present embodiment provides a wafer bonding apparatus and a wafer bonding method, which are implemented by means of the wafer bonding apparatus. The detailed structure of the wafer bonding apparatus and the process of bonding two wafers (hereinafter referred to as a sample) are described in detail below.
As shown in fig. 1, the wafer bonding apparatus includes a deposition chamber 1, a vacuum pumping unit (not shown), a gas supply unit, a bonding chamber 3, a communication mechanism 4, and a pressing driving mechanism (not shown), wherein the communication mechanism 4 is connected to the deposition chamber 1 and the bonding chamber 3, respectively, and can selectively communicate the deposition chamber 1 and the bonding chamber 3. The deposition chamber 1 is internally provided with a carrier assembly 21, the carrier assembly 21 can support the sample 6 and heat the sample 6, the deposition chamber 1 is provided with an air inlet 11 and an air outlet 12, an air supply unit is communicated with the air inlet 11, and the air supply unit can supply process gas and inert gas into the deposition chamber 1 so as to enable the surface of the sample 6 to deposit an intermediate layer, and the intermediate layer is transparent and non-conductive. The exhaust port 12 of the deposition chamber 1 is used to communicate with an exhaust gas treatment device (not shown) that can recover and purify the gas exhausted from the deposition chamber 1, avoiding environmental pollution. The evacuation unit is capable of evacuating the deposition chamber 1 and the bonding chamber 3 at appropriate timings, respectively. An upper pressure head assembly 51, a lower pressure head assembly 52 and an activation assembly 53 are arranged in the bonding chamber 3, the upper pressure head assembly 51 and the lower pressure head assembly 52 are arranged up and down oppositely and can be used for respectively fixing the samples 6, the activation assembly 53 is used for enabling the surfaces of the samples 6 on the upper pressure head assembly 51 and the lower pressure head assembly 52 to be activated, and the pressing driving mechanism can drive the upper pressure head assembly 51 to press downwards with the lower pressure head assembly 52 so as to bond the two samples 6.
When the wafer bonding apparatus of this embodiment is used, at least two samples 6 to be bonded are placed on the stage assembly 21 of the deposition chamber 1, then the deposition chamber 1 is pumped to a proper vacuum degree by the vacuumizing unit, then the stage assembly 21 heats the samples 6 to a proper temperature, the air supply unit further introduces process air into the deposition chamber 1, so that a transparent and non-conductive intermediate layer is deposited on the surface of the samples 6, then inert air is introduced into the deposition chamber 1, so that the process air in the deposition chamber 1 is discharged, then the deposition chamber 1 is communicated with the bonding chamber 3 by the communicating mechanism 4, so that the samples 6 with intermediate layers deposited in the deposition chamber 1 can be respectively fixed on the upper pressure head assembly 51 and the lower pressure head assembly 52, then the intermediate layers of the samples 6 on the upper pressure head assembly 51 and the lower pressure head assembly 52 are subjected to surface activation treatment by the activating assembly 53, and finally the upper pressure head assembly 51 is driven by the pressing driving mechanism to press the lower pressure head assembly 52, so that bonding of the samples 6 can be realized. In the wafer bonding apparatus of this embodiment, an intermediate layer which is easy to bond can be deposited on the surface of the sample 6 through the deposition chamber 1 and the structure therein, and then the surface of the sample 6 is activated through the activation component 53, so that reliable bonding of two samples 6 in a low-temperature environment can be realized, and the introduced intermediate layer is transparent and nonconductive, so that the insulation and the light transmittance of the bonded device are not adversely affected.
It will be appreciated that a sputtering assembly may also be provided within the bonding chamber 3 for sputtering a silicon layer onto the surface of the sample 6 to which the upper and lower ram assemblies 51, 52 are secured. At this time, the bonding of the device having no requirement for light transmission performance can be achieved only by using the bonding chamber 3 and the structure therein.
In this embodiment, the material of the intermediate layer may be TiO 2 、AL2O 3 、SiO 2 、HfO 2 An assembly of one or two or more materials that are transparent and non-conductive, meeting the use requirements. With intermediate layer as AL 2 O 3 For example, the gas supply unit may alternately supply Al (CH 3) to the deposition chamber 1, provided that the stage assembly 21 heats the sample 6 to an appropriate temperature 3 And O 3 Gas or alternatively introducing Al (CH) 3 ) 3 And H 2 O gas can make sample 6 surface deposit AL 2 O 3 . It can be understood that when the intermediate layer is made of other materials, the corresponding process gas is introduced, and the corresponding process gas is the prior art and is not described herein. Alternatively, the process may be carried out in a single-stage,the specific process used for depositing the intermediate layer in the deposition chamber 1 may be one of low pressure chemical vapor deposition, atomic deposition, and plasma enhanced chemical vapor deposition, and is not particularly limited herein.
Alternatively, the thickness of the intermediate layer is in the range of 0.5nm to 100nm, which is sufficient to ensure reliable bonding of the two samples 6 without excessively increasing the overall thickness of the device formed by the final bonding. Of course, in other embodiments, the thickness of the intermediate layer may be flexibly set according to actual requirements.
Preferably, as shown in fig. 1, a first electrode assembly 22 is disposed in the deposition chamber 1, the first electrode assembly 22 is used for generating plasma, the voltage range that the first electrode assembly 22 can apply is 200 v-380 v, and the power range is 50-300W. The plasma generated by the first electrode assembly 22 can increase the efficiency of depositing the intermediate layer on the surface of the sample 6, thereby increasing the speed of the overall bonding process. The electrode assembly capable of generating plasma is a prior art, and the specific working principle thereof is not described herein. Alternatively, the plasma generated by the first motor assembly may be an Ar plasma.
Preferably, as shown in fig. 1, the stage assembly 21 includes a stage body 211, a rotating shaft 212, a first heating element 213 and a rotary driving element (not shown), a plurality of supporting positions are disposed on the stage body 211, each supporting position is correspondingly provided with the first heating element 213, each supporting position can correspondingly support one sample 6, the stage body 211 is fixedly connected with the rotating shaft 212, the rotary driving element can drive the rotating shaft 212 to rotate, and the air inlet 11 is disposed through the rotating shaft 212. Since the time of depositing the intermediate layer on the sample 6 in the deposition chamber 1 is longer than the time of bonding the sample 6 in the bonding chamber 3, in this embodiment, the support of multiple samples 6 can be realized by setting multiple support positions on the carrier body 211 at the same time, and the surface of the sample 6 on the corresponding support position starts to be deposited only after the first heating element 213 starts to heat, so that the time of starting to heat the first heating element 213 can be controlled to control whether the corresponding sample 6 starts to be deposited, thereby reasonably controlling the deposition completion sequence of all the samples 6, enabling the time of completing the deposition of each sample 6 to correspond to the time of completing the sample 6 in each bonding of the bonding chamber 3, and further improving the bonding efficiency of the whole wafer bonding device. In addition, by providing the gas inlet 11 on the rotation shaft 212 and rotating the rotation driving member to drive the stage body 211, the process gas can be more uniformly contacted with each sample 6, and uniformity of the deposited intermediate layer of each sample 6 can be ensured. It will be appreciated that in other embodiments, the gas inlet 11 may be provided on the side wall or on the top of the deposition chamber 1, which is not particularly limited herein. Specifically, the rotary driving member may be a motor-driven assembly structure, which is not particularly limited herein. In the present embodiment, the heating principle of the first heating member 213 is not limited to the form of resistance wire heating, irradiation heating, or the like.
Preferably, the deposition chamber 1 includes a plurality of exhaust ports 12. When the process gas in the deposition chamber 1 is exhausted by introducing the inert gas into the deposition chamber 1, the process gas can be exhausted from the plurality of exhaust ports 12, so that the process gas can be better exhausted, and the residual process gas in the deposition chamber 1 is avoided. The number of specific exhaust ports 12 may be selected as desired, and is not limited herein.
Alternatively, as shown in fig. 1, in the present embodiment, the communication mechanism 4 includes an intermediate chamber 41, a first valve 42, and a second valve 43, the first valve 42 enabling the deposition chamber 1 to communicate with the intermediate chamber 41, and the second valve 43 enabling the intermediate chamber 41 to communicate with the bonding chamber 3. When both the first valve 42 and the second valve 43 are opened, the deposition chamber 1 communicates with the bonding chamber 3, so that the sample 6 in the deposition chamber 1 can be fed into the bonding chamber 3. In this embodiment, the wafer bonding apparatus further includes a manipulator (not shown) disposed in the intermediate chamber 41, and the execution end of the manipulator can extend into the deposition chamber 1 and the bonding chamber 3, so that the actions of placing the sample 6 on the stage assembly 21, placing the sample 6 on the stage assembly 21 on the upper ram assembly 51 or the lower ram assembly 52, and removing the sample 6 on the upper ram assembly 51 or the lower ram assembly 52 can be completed. Optionally, in this embodiment, the manipulator is a six-axis manipulator, which is flexible to act and can meet the above-mentioned action requirement.
In other embodiments, a side wall may be shared between the deposition chamber 1 and the bonding chamber 3, where a third valve is disposed on the side wall, and when the third valve is opened, the deposition chamber 1 and the bonding chamber 3 are in communication. In this embodiment, the wafer bonding apparatus also includes a robot arm disposed in the deposition chamber 1 or the bonding chamber 3, and when the robot arm is disposed in the bonding chamber 3, the execution end of the robot arm can be extended into the deposition chamber 1 through the third valve, and when the robot arm is disposed in the deposition chamber 1, the execution end of the robot arm can be extended into the bonding chamber 3 through the third valve, thereby enabling the sample 6 in the deposition chamber 1 to be fed into the bonding chamber 3. In this embodiment, the robot may be a six-axis robot.
As shown in fig. 1, the upper press head assembly 51 includes an upper press head body 511 and a first electrostatic absorption member 513 connected in sequence, the upper press head body 511 is connected with a press driving mechanism, and the first electrostatic absorption member 513 can absorb and fix the sample 6. The lower head assembly 52 includes a lower head body 521 and a second electrostatic adsorbing member 523, the lower head body 521 being fixed in the bonding chamber 3, the second electrostatic adsorbing member being capable of adsorbing and fixing the sample 6. The upper pressure head assembly 51 and the lower pressure head assembly 52 respectively fix the sample 6 in an electrostatic adsorption mode, so that the sample 6 is more convenient to take and place. The specific structure of the electrostatic adsorption component is the prior art and will not be described herein.
Preferably, as shown in fig. 1, the upper ram assembly 51 further includes a second heating element 512, the second heating element 512 being capable of heating the sample 6 adsorbed by the first electrostatic adsorption assembly, and the lower ram assembly 52 further includes a third heating element 522, the third heating element 522 being capable of heating the sample 6 adsorbed by the second electrostatic adsorption assembly. After the upper and lower ram assemblies 51 and 52 bond the two samples 6, the samples 6 may be heat tempered by the second and third heating members 512 and 522, respectively, to enhance atomic diffusion of the intermediate layers of the two samples 6, thereby improving the bonding strength. Optionally, the second heating element 512 is a heating plate and is disposed between the upper pressing head body 511 and the first electrostatic adsorption component, and the third heating element 522 is a heating plate and is disposed between the lower pressing head body 521 and the second electrostatic adsorption component, so that the sample 6 is heated more uniformly. Preferably, the heating temperature of the second heating element 512 and the third heating element 522 for the sample 6 is 100 ℃ to 500 ℃, which can be specifically selected according to actual needs, and is not limited herein.
As shown in fig. 1, the activation assembly 53 includes an ion source 531, and the ion source 531 is used to bombard the surface of the sample 6 to which the upper and lower ram assemblies 51 and 52 are fixed, so that the intermediate layer on the surface of the sample 6 is activated, thereby making it easier for the two samples 6 to bond. Specifically, the activation assembly 53 includes two ion sources 531, and the two ion sources 531 bombard and activate the surfaces of the sample 6 on the upper and lower ram assemblies 51 and 52, respectively. In particular, the ion source 531 may be, but is not limited to being, a fast atom bombardment source, an inductively coupled plasma ion source. In this embodiment, the ion source 531 may be fixed in the bonding chamber 3, or may be movably connected with the bonding chamber 3, so long as it is ensured that the ion source 531 can be aligned with the surface of the sample 6 when the sample 6 needs to be activated.
Preferably, as shown in fig. 2, the activation assembly 53 further includes a second electrode assembly 532, and the second electrode assembly 532 is used to generate plasma, so that the intermediate layer on the surface of the sample 6 is activated, and thus the two samples 6 are bonded more easily. In this embodiment, the electrode is connected to a radio frequency power source for generating a localized plasma. Alternatively, the number of the second electrode assemblies 532 may be two, and in other embodiments, the number of the second electrode assemblies 532 may be selectively set as needed. It will be appreciated that in other embodiments, the activation assembly 53 may include only the ion source 531 or only the second electrode assembly 532, without limitation.
The embodiment also provides a wafer bonding method, which is realized by adopting the wafer bonding equipment, and comprises the following steps:
placing at least two samples 6 on a stage assembly 21 of the deposition chamber 1, and vacuumizing the deposition chamber 1 to a proper vacuum degree by a vacuumizing unit;
stage assembly 21 heats sample 6 to a preset temperature;
the gas supply unit introduces process gas into the deposition cavity by a preset process to deposit a transparent and non-conductive intermediate layer which is TiO on the surface of the sample 6 2 、Al 2 O 3 、SiO 2 、HfO 2 One or both ofThe thickness of each material layer is 0.5nm-100nm, the total thickness of the intermediate layer is not more than 200nm, and the preset process can be one of low-pressure chemical vapor deposition, atomic deposition and plasma enhanced chemical vapor deposition;
the gas supply unit introduces inert gas into the deposition chamber 1 so as to replace process gas in the deposition chamber 1;
operating the communication mechanism 4 to communicate the bonding chamber 3 with the deposition chamber 1;
the manipulator sends the sample 6 deposited with the intermediate layer in the deposition chamber 1 into the bonding chamber 3 and is respectively fixed on the upper pressure head assembly 51 and the lower pressure head assembly 52;
operating the communication mechanism 4 to close the bonding chamber 3;
the vacuumizing unit vacuumizes the bonding chamber 3 and activates the activating component 53 to activate the surface of the sample 6, in this process, both the ion source 531 and the second electrode component 532 may be turned on, or only one of them may be turned on;
closing the activation assembly 53 to enable the pressing driving mechanism to drive the upper pressing head assembly 51 to press the lower pressing head assembly 52 downwards and keep pressure;
the upper pressure head assembly 51 or the lower pressure head assembly 52 is loose to fix the corresponding sample 6, and the pressing driving mechanism drives the upper pressure head assembly 51 to lift;
the manipulator removes the bonded sample from either the upper ram assembly 51 or the lower ram assembly 52.
The embodiment also provides a composite substrate assembly, which is manufactured by the wafer bonding method. The composite substrate assembly comprises a first substrate and a second substrate, wherein the surfaces of the first substrate and the second substrate facing each other are respectively formed with a first deposition layer and a second deposition layer, the first deposition layer and the second deposition layer are bonded to form an intermediate layer, and the intermediate layer is made of TiO (titanium dioxide) 2 、Al 2 O 3 、SiO 2 、HfO 2 One or a combination of two or more materials. The intermediate layer is made of the material, so that the light transmittance and the insulativity of the composite substrate assembly are not affected, and the application range is wide. Preferably, the bonding interface of the first deposited layer and the second deposited layerElement enrichment is present in the + -3 nm range. The enrichment of the elements is beneficial to increasing the connection strength of the first deposition layer and the second deposition layer, thereby improving the strength of the composite substrate assembly. Specifically, the element enriched at the bonding interface is one of Ar and O, ti, al, si, hf, and the atomic concentration of Ar is not more than 5%.
It is to be understood that the foregoing examples of the invention are provided for the purpose of illustration only and are not intended to limit the scope of the invention, which is defined by the claims, since modifications in both the detailed description and the application scope of the invention will become apparent to those skilled in the art upon consideration of the teachings of the invention. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are desired to be protected by the following claims.
Claims (11)
1. A wafer bonding apparatus, comprising:
the vacuum-pumping device comprises a deposition chamber (1) and a vacuum-pumping unit, wherein the vacuum-pumping unit can be used for vacuumizing the deposition chamber (1), a carrier assembly (21) is arranged in the deposition chamber (1), the carrier assembly (21) can support a sample and heat the sample, and the deposition chamber (1) is provided with an air inlet (11) and an air outlet (12);
a gas supply unit in communication with the gas inlet (11), the gas supply unit being capable of supplying a process gas and an inert gas into the deposition chamber (1) to deposit an intermediate layer on the sample surface, the intermediate layer being transparent and non-conductive;
a bonding chamber (3) and a communication mechanism (4), wherein the communication mechanism (4) is connected with the deposition chamber (1) and the bonding chamber (3) and can selectively enable the bonding chamber (3) and the deposition chamber (1) to be communicated, the vacuumizing unit can vacuumize the bonding chamber (3), an upper pressure head assembly (51), a lower pressure head assembly (52) and an activating assembly (53) are arranged in the bonding chamber (3), the upper pressure head assembly (51) and the lower pressure head assembly (52) are arranged in an up-down opposite mode and can respectively fix the sample, and the activating assembly (53) is used for activating the surfaces of the samples on the upper pressure head assembly (51) and the lower pressure head assembly (52);
the communication mechanism (4) comprises an intermediate chamber (41), a first valve (42) and a second valve (43), wherein the first valve (42) can enable the deposition chamber (1) to be communicated with the intermediate chamber (41), and the second valve (43) can enable the intermediate chamber (41) to be communicated with the bonding chamber (3);
the wafer bonding device further comprises a manipulator, wherein the manipulator is arranged in the middle chamber (41), and the execution end of the manipulator can extend into the deposition chamber (1) and the bonding chamber (3) respectively so as to place a sample on the carrier assembly (21), place the sample on the carrier assembly (21) on the upper pressure head assembly (51) or the lower pressure head assembly (52) and take down the sample on the upper pressure head assembly (51) or the lower pressure head assembly (52);
the pressing driving mechanism can drive the upper pressing head assembly (51) to press downwards with the lower pressing head assembly (52) so as to bond the two samples;
the carrier assembly (21) comprises a carrier body (211), a rotating shaft (212), a first heating piece (213) and a rotary driving piece, wherein a plurality of bearing positions are arranged on the carrier body (211), each bearing position corresponds to the first heating piece (213), each bearing position corresponds to one bearing sample, the carrier body (211) is fixedly connected with the rotating shaft (212), the rotary driving piece can drive the rotating shaft (212) to rotate, and the air inlet (11) penetrates through the rotating shaft (212).
2. The wafer bonding apparatus of claim 1, wherein the material of the intermediate layer is TiO 2 、Al 2 O 3 、SiO 2 、HfO 2 A combination of one or more materials.
3. The wafer bonding apparatus of claim 1, wherein the thickness of the intermediate layer is between 0.5nm and 100nm.
4. Wafer bonding apparatus according to any of claims 1-3, wherein a first electrode assembly (22) is arranged in the deposition chamber (1), the first electrode assembly (22) being adapted to generate a plasma, the first electrode assembly (22) being capable of applying a voltage in the range 200 v-380 v and a power in the range 50-300W.
5. Wafer bonding apparatus according to any of claims 1-3, wherein the exhaust port (12) is provided with a plurality.
6. The wafer bonding apparatus according to any one of claims 1 to 3, wherein the upper press head assembly (51) comprises an upper press head body (511), a second heating member (512) and a first electrostatic absorption member (513) which are sequentially connected, the upper press head body (511) is connected with the press driving mechanism, the first electrostatic absorption member (513) is capable of absorbing and fixing a sample, and the second heating member (512) is capable of heating the sample absorbed by the first electrostatic absorption member (513); and/or
The lower pressure head assembly (52) comprises a lower pressure head body (521), a third heating element (522) and a second electrostatic absorption element (523) which are sequentially connected, the lower pressure head body (521) is fixed in the bonding chamber (3), the second electrostatic absorption element can absorb and fix a sample, and the third heating element (522) can heat the sample absorbed by the second electrostatic absorption element (523).
7. Wafer bonding apparatus according to any of claims 1-3, wherein the activation assembly (53) comprises:
-an ion source (531), said ion source (531) being adapted to bombard a surface of said sample to which said upper ram assembly (51) and said lower ram assembly (52) are secured; and/or
A second electrode assembly (532), the second electrode assembly (532) for generating a plasma.
8. A wafer bonding method, characterized in that it is accomplished by using the wafer bonding apparatus according to any one of claims 1 to 7, comprising the steps of:
placing at least two samples on the stage assembly (21) of the deposition chamber (1) and evacuating the deposition chamber (1);
the stage assembly (21) heats the sample to a preset temperature;
introducing process gas into the deposition chamber (1) by a preset process to deposit a transparent and non-conductive intermediate layer on the surface of the sample, wherein the intermediate layer is TiO 2 、Al 2 O 3 、SiO 2 、HfO 2 Each material layer having a thickness of 0.5nm to 100nm, the total thickness of the intermediate layer not exceeding 200nm;
introducing an inert gas into the deposition chamber (1) to displace the process gas;
operating the communication mechanism (4) to communicate the bonding chamber (3) with the deposition chamber (1), and feeding the sample deposited with the intermediate layer in the deposition chamber (1) into the bonding chamber (3) and correspondingly fixing the sample on the upper pressure head assembly (51) and the lower pressure head assembly (52);
operating the communication mechanism (4) to close the bonding chamber (3);
-evacuating the bonding chamber (3) and activating the sample surface by the activation assembly (53);
closing the activation assembly (53), and driving the upper pressure head assembly (51) to press downwards with the lower pressure head assembly (52) by the pressing driving mechanism and keeping pressure;
the upper pressure head assembly (51) or the lower pressure head assembly (52) is loose from fixing the corresponding sample, and the pressing driving mechanism drives the upper pressure head assembly (51) to lift.
9. The wafer bonding method of claim 8, wherein the predetermined process is one of low pressure chemical vapor deposition, atomic deposition, and plasma enhanced chemical vapor deposition.
10. A composite substrate assembly made by the wafer bonding method of claim 8 or 9, said composite substrate assembly comprisingThe substrate assembly comprises a first substrate and a second substrate, wherein the surfaces of the first substrate and the second substrate facing each other are respectively provided with a first deposition layer and a second deposition layer, the first deposition layer and the second deposition layer are bonded to form an intermediate layer, and the intermediate layer is TiO 2 、Al 2 O 3 、SiO 2 、HfO 2 Is present in the range of + -3 nm of the bonding interface of the first deposited layer and the second deposited layer.
11. The composite substrate assembly of claim 10, wherein the element enriched at the bonding interface is one of Ar and O, ti, al, si, hf, and the atomic concentration of Ar is no more than 5%.
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| CN117612980B (en) * | 2024-01-23 | 2024-04-02 | 天津中科晶禾电子科技有限责任公司 | Wafer bonding device |
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| CN114086156A (en) * | 2022-01-19 | 2022-02-25 | 北京中科重仪半导体科技有限公司 | Thin film deposition apparatus |
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| JP2791429B2 (en) * | 1996-09-18 | 1998-08-27 | 工業技術院長 | Room-temperature bonding of silicon wafers |
| US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
| US20030213560A1 (en) * | 2002-05-16 | 2003-11-20 | Yaxin Wang | Tandem wafer processing system and process |
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