CN116088097B - Polygonal MIMO mode converter and design method - Google Patents

Polygonal MIMO mode converter and design method Download PDF

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CN116088097B
CN116088097B CN202310386023.XA CN202310386023A CN116088097B CN 116088097 B CN116088097 B CN 116088097B CN 202310386023 A CN202310386023 A CN 202310386023A CN 116088097 B CN116088097 B CN 116088097B
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input
mode converter
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waveguide
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CN116088097A (en
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高阳
储涛
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Zhejiang Lab
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/14—Mode converters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12152—Mode converter
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Abstract

The application discloses a polygonal multi-input multi-output mode converter and a design method, which are characterized in that the polygonal multi-input multi-output mode converter is a 2 (n+1) or 2n+1-sided multi-input multi-output mode converter, and comprises a silicon dioxide substrate, top silicon and a low refractive index material cladding, wherein the top silicon comprises a first input waveguide, a second input waveguide … … Nth input waveguide, a first mode conversion area, a second mode conversion area … … Nth mode conversion area, a first output waveguide and a second output waveguide … … Nth output waveguide, the first mode conversion area and the second mode conversion area … … Nth mode conversion area are divided into a plurality of units, the states of the units are etched or not etched, and when the units are in an etched state, the internal materials are low refractive index materials; when the unit is in a non-etching state, the internal material is silicon; the first input waveguide, the first mode conversion area and the first output waveguide form a first mode converter, and the rest is the same.

Description

Polygonal MIMO mode converter and design method
Technical Field
The application relates to the technical field of micro-nano optoelectronic components, in particular to a polygonal multi-input multi-output mode converter and a design method thereof.
Background
Fiber optic communications have evolved at a remarkable rate since the advent of the prior art. However, with the continuous development of information technology in modern society, the transmission capacity of a communication system based on a single-mode fiber has come close to the limit due to the influence of optical nonlinearity and fiber fusion effect, and it is increasingly difficult to meet the increasing communication traffic demand. To solve this problem, various multiplexing techniques such as wavelength division multiplexing, mode division multiplexing, partial division multiplexing, and the like have been proposed successively. The technology of the module multiplexing (Mode Division Multiplexing, MDM) is to take mutually independent different modes as information carriers, take few-mode optical fibers as information transmission media, and can provide multiplexing functions of more data in a limited space, thereby meeting the requirement of an optical interconnection system on exponentially increasing bandwidth, and receiving extensive attention of researchers. The MDM system is built without a plurality of basic functional devices, such as a mode division multiplexing/de-multiplexing device, a mode switch, a mode converter and the like, which play different roles in the MDM system, and cooperate with each other to jointly realize the function of increasing the channel capacity. The mode converter is used for converting between different modes at a receiving end and an emitting end in the MDM system, and is one of key devices for improving flexibility of the MDM system.
Mode converters have been proposed today based on various structures such as asymmetric directional couplers, mach-zehnder MZI interferometers, bragg gratings, photonic crystals, Y-branches, trench waveguides, long period gratings, etc. Most of the mode converters are single-port input and single-port output, namely, m-order modes input from an input port are converted into n-order modes through the mode converters and output from the input port (m and n are non-negative integers, and m is not equal to n), so that the flexibility of the mode division multiplexing system is limited to a certain extent. The shape rule of the structures is basically based on the existing analysis theory, the design flow is to manually set the parameters of the devices, perform simulation calculation or experiments by using optical simulation software, and adjust and optimize each parameter according to the obtained data result until a satisfactory result is obtained. However, there are many limitations in this method, for example, it is difficult to obtain a globally optimal result by manually adjusting a certain parameter, when the parameters involved in the device are many, the simultaneous optimization of a plurality of parameters will consume huge labor and time costs, and meanwhile, due to the limitation of the analytical theory, the manual adjustment is only suitable for designing the device structure with some shape rules, so that the performance and the function of the device are limited. In addition, the size of the device designed according to the analysis theory is generally larger, which is not beneficial to improving the integration level.
Disclosure of Invention
The embodiment of the application aims at solving the problems in the prior art and provides a polygonal multi-input multi-output mode converter and a design method thereof, so as to provide the mode converter which has compact size, flexible function, expandable performance and simple preparation process.
The embodiment of the application provides a polygonal multi-input multi-output mode converter and a design method, wherein the polygonal multi-input multi-output mode converter is a 2 (n+1) or 2n+1-sided multi-input multi-output converter, N is more than or equal to 0, the polygonal multi-input multi-output mode converter comprises a silicon dioxide substrate, top silicon and a low refractive index material cladding, the top silicon comprises a first input waveguide, a second input waveguide … … Nth input waveguide, a first mode conversion area, a second mode conversion area … … Nth mode conversion area, a first output waveguide and a second output waveguide … … Nth output waveguide, the first mode conversion area and the second mode conversion area … … Nth mode conversion area are divided into a plurality of units, the states of the units are etched or not etched, and when the units are in an etched state, the internal materials are low refractive index materials; when the unit is in a non-etching state, the internal material is silicon;
the first input waveguide, the first mode conversion region and the first output waveguide form a first mode converter, the second input waveguide, the second mode conversion region and the second output waveguide form a second mode converter … …, and the nth input waveguide, the nth mode conversion region and the nth output waveguide form an nth mode converter.
Further, the N-th input waveguide of the first input waveguide and the second input waveguide … … has a wavelength range of 1520 nm to 1580 nm.
Further, the thickness of the silicon dioxide substrate is 3 μm, and the thickness of the top silicon layer is 220 nm.
Further, the unit realizes the etching state by single-step etching.
Further, when the state of the unit is etching, the etching depth is the same as the thickness of the top silicon.
Further, all mode converters adopt the same design method, and for the ith mode converter for realizing conversion from an X-order mode to a Y-order mode, wherein X, y=0, 1, 2 … …, 1.ltoreq.i.ltoreq.n, the design method is as follows:
(1) Dividing an i-th mode conversion area into A multiplied by B identical units, wherein each unit is used as a pixel point;
(2) The pixel points are all in an etching-free state and are in an initial state, and an initial quality factor FOMmax of the polygonal MIMO mode converter in the initial state is calculated;
(3) For all the pixel points of the ith mode conversion area, starting from the first pixel point in sequence, changing the state of the pixel points, calculating a new quality factor temp, if temp > FOMmax, keeping the state of the pixel points unchanged, and assigning temp to FOMmax; if temp < FOMmax, the pixel point is changed back to the original state;
(4) Repeating the step (3) for a plurality of iterations, and outputting a device pattern which is the device structure finally obtained by optimization when the FOM reaches the maximum value.
Further, for an i-th mode converter for realizing conversion of an X-order mode to a Y-order mode, if x=y, the i-th mode converter is for changing a propagation path of the mode.
Further, the calculation formula of the quality factor FOM is as follows:
wherein M is the number of wavelength channels, and when an X-order mode is input from the ith input waveguide at a certain wavelength, the transmittance of the X-order mode monitored by the ith output waveguide is t 1 The transmittance of the Y-order mode is monitored to be t 0 。
The technical scheme provided by the embodiment of the application can comprise the following beneficial effects:
from the above embodiments, the application applies the inverse design algorithm to design the photonic device with compact size and irregular structure. The polygonal multi-input multi-output mode converter designed by the method has no specific requirements on whether the polygon is a regular polygon or not and the positions of the output waveguides and the output waveguides, has smaller size, more flexible functions and simple preparation process, and can be used for realizing mode conversion in a mode division multiplexing system.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.
Fig. 1 is a functional example diagram of a polygonal mimo mode converter according to an exemplary embodiment.
FIG. 2 is a block diagram of a regular hexagonal three-in three-out TE according to an exemplary embodiment 0 /TE 1 Schematic diagram of the functional principle of the mode converter.
FIG. 3 is a block diagram illustrating a regular hexagonal three-in three-out TE according to an exemplary embodiment 0 /TE 1 The first mode converter triangle pixel point dividing mode in the mode converter is schematically shown.
FIG. 4 is an illustration of an optimized regular hexagonal three-in three-out TE according to an exemplary embodiment 0 /TE 1 The first mode converter of the mode converters is schematically structured.
FIG. 5 is a block diagram of a regular hexagonal three-in three-out TE according to an exemplary embodiment 0 /TE 1 The first input waveguide of the first one of the mode converters inputs TE 0 In mode, the field distribution in the first mode converter simulates the result.
FIG. 6 is a block diagram illustrating a regular hexagonal three-in three-out TE according to an exemplary embodiment 0 /TE 1 The first mode converter parallelogram pixel point dividing mode in the mode converter is schematically shown.
FIG. 7 is an illustration of an optimized regular hexagonal three-in three-out TE according to an exemplary embodiment 0 /TE 1 The first mode converter of the mode converters is schematically structured.
FIG. 8 is a block diagram of a regular hexagonal three-in three-out TE according to an exemplary embodiment 0 /TE 1 The first input waveguide of the first one of the mode converters inputs TE 0 In mode, the field distribution in the first mode converter simulates the result.
Fig. 9 is a process implementation flow diagram of a polygonal multiple-input multiple-output mode converter, according to an example embodiment.
In the figure: 1. a first input waveguide; 2. a first mode conversion region; 3. a first output waveguide; 4. a second input waveguide; 5. a second mode conversion region; 6. a second output waveguide; 7. a third input waveguide; 8. a third mode conversion region; 9. a third output waveguide; 10. silicon; 11. silicon dioxide; 12. a photoresist; 13. a low refractive index material.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the application.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any or all possible combinations of one or more of the associated listed items.
It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, these information should not be limited by these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the application. The word "if" as used herein may be interpreted as "at … …" or "at … …" or "responsive to a determination", depending on the context.
The application provides a polygonal multi-input multi-output mode converter and a design method, wherein the polygonal multi-input multi-output mode converter is a 2 (N+1) or 2N+1-sided multi-input multi-output mode converter, and comprises a silicon dioxide 11 substrate, top silicon 10 and a low refractive index material 13 cladding layer, wherein the top silicon comprises a first input waveguide 1, a second input waveguide 4 … … Nth input waveguide, a first mode conversion region 2, a second mode conversion region 5 … … Nth mode conversion region, a first output waveguide 3 and a second output waveguide 6 … … Nth output waveguide; the first input waveguide 1, the first mode conversion region 2, and the first output waveguide 3 form a first mode converter, the second input waveguide 4, the second mode conversion region 5, and the second output waveguide 6 form a second mode converter … …, and the nth input waveguide, the nth mode conversion region, and the nth output waveguide form an nth mode converter.
From the above embodiments, the application applies the inverse design algorithm to design the photonic device with compact size and irregular structure. The polygonal multi-input multi-output mode converter designed by the method has no specific requirements on whether the polygon is a regular polygon or not and the positions of the output waveguides and the output waveguides, has smaller size and more flexible functions, and can be used for realizing mode conversion in a mode division multiplexing system.
In particular, the function example of the polygonal mimo mode converter provided by the application is shown in fig. 1, and it can be seen that whether the polygon is a regular polygon or not, the function of the mimo mode converter can be realized by appropriately dividing the polygon according to experience,
in particular, the positions of the input and output waveguides can be adjusted almost arbitrarily, and the mode converter N can realize conversion between any two modes or change of the propagation path of the same mode. Specifically, all the mode converters employ the same design method for the i-th mode converter for realizing conversion of the X-order mode to the Y-order mode, where X, y=0, 1, 2 … …, and when x=y, the i-th mode converter is used for changing the propagation path of the mode, the design method is as follows:
(1) Dividing an i-th mode conversion area into A multiplied by B identical units, wherein each unit is used as a pixel point, the state of the pixel point is etching or non-etching, the etching depth is identical with the thickness of the top silicon, and when the pixel point is in an etching state, the internal material is a low-refractive index cladding material; when the pixel points are in a non-etching state, the internal material is silicon;
(2) The pixel points are all in an initial state when not in an etching state, and an initial quality factor FOMmax of the polygonal MIMO mode converter at the moment is calculated;
(3) For all the pixel points of the ith mode conversion area, starting from the first pixel point in sequence, changing the state of the pixel points, calculating a new quality factor temp, if temp > FOMmax, keeping the state of the pixel points unchanged, and assigning temp to FOMmax; if temp < FOMmax, the pixel point is changed back to the original state;
(4) Repeating the step (3) for a plurality of iterations, and outputting a device pattern which is the device structure finally obtained by optimization when the FOM reaches the maximum value.
Example 1
The application provides a regular hexagon three-in three-out TE shown in figure 2 0 /TE 1 A mode converter comprising a silicon dioxide 11 substrate, a top silicon 10 and an air cladding, said top silicon 10 comprising a first input waveguide 1, a second input waveguide 4, a third input waveguide 7, a first mode conversion region 2, a second mode conversion region 5, a third mode conversion region 8, a first output waveguide 3, a second output waveguide 6 and a third output waveguide 9.
The first input waveguide 1, the first mode conversion area 2 and the first output waveguide 3 form a first mode converter, the second input waveguide 4, the second mode conversion area 5 and the second output waveguide 6 form a second mode converter, and the third input waveguide 7, the third mode conversion area 8 and the third output waveguide 9 form a third mode converter. The first mode converter, the second mode converter and the third mode converter are identical.
The first mode converter is shown in fig. 3, and the design method is as follows:
the first mode conversion area 2 in the first mode converter is divided into 20×20×2 regular triangle pixel points as shown in fig. 3, where the pixel points are etched or not, and the etching depth is the same as the thickness of the top silicon 10, that is, when the pixel points are etched, the material is air; when the pixel is not etched, the material is silicon,
according to the desire to realizeI.e. TE input from the first input waveguide 1 0 Mode conversion to TE output by the first output waveguide 3 1 Mode) to define the proper FOM for evaluating the performance of the device. In this design, FOM is defined using the following formula:
where M is the number of wavelength channels. At a certain wavelength, TE is input from the first input waveguide 1 0 In mode, TE is monitored at the first output waveguide 3 1 The transmittance of the mode is t 1 Monitored TE 0 The transmittance of the mode is t 0 . FOM increases as mode conversion efficiency increases; and vice versa. Ideally, i.e. the entered TE 0 TE with mode fully converted to output 1 In the mode, fom=1,
setting the pixel points to be in an initial state when all the pixel points are in a non-etching state, calculating the initial FOM of the device at the moment, and recording the initial FOM as the FOM max 。
The state of the pixel point is changed from the first pixel point in sequence (namely, the state is changed to the etching state if the pixel point is originally in the non-etching state, otherwise, the state is changed to the non-etching state if the pixel point is originally in the etching state), and a new FOM is calculated and is recorded as temp. If temp> FOM max The pixel point state is kept unchanged, and temp is assigned to the FOM max The method comprises the steps of carrying out a first treatment on the surface of the If temp< FOM max The pixel is changed back to the original state.
After the calculation of the 800 th pixel point is finished, the step is called as one iteration finishing, and then the steps are repeated, and after a plurality of iterations, the device graph output when the FOM reaches the maximum value is shown in fig. 4. When TE is 0 The simulation result of the field distribution in the first mode converter when the mode is input from the first input waveguide 1 is shown in fig. 5.
Specifically, the state transformation of the pixel points, the calculation and the comparison of the FOM are realized by means of a programming language Python and a three-dimensional finite time domain difference (3D-FDTD) function in commercial optical simulation software Lumerical.
Specifically, the input waveguide has an input wavelength range of 1520 nm to 1580 nm, and a wavelength channel number m=9.
Specifically, the thickness of the substrate is 3 μm, the thickness of the top silicon 10 is 220 nm, the mode conversion area is a parallelogram with a side length of 3 μm, and the pixel points are all regular triangles with a side length of 150 nm.
Specifically, the width of the first input waveguide 1 is 0.5 μm, and the width of the first output waveguide 3 is 0.8 μm.
The design method of the second mode converter and the third mode converter is completely the same as that of the first mode converter, and finally the regular hexagon TE with three inputs and three outputs can be obtained 0 /TE 1 A mode converter.
Example 2
The technical scheme provided by the embodiment is basically the same as that provided by the second embodiment, and the difference is that: the first mode conversion area 2 of the first mode converter is divided into 20×20 parallelogram pixel points as shown in fig. 6. The final calculated mode converter is shown in FIG. 7, when TE 0 The simulation result of the field distribution in the first mode converter when the mode is input from the first input waveguide 1 is shown in fig. 8. The same function as the three-in three-out mode converter described in the second embodiment can be achieved. It can be seen that the choice of the pixel shape is also relatively free and flexible.
Example 3
In this embodiment, a specific preparation method of the mode converter set forth in embodiment 1 is described in detail with reference to fig. 9, and the specific steps are as follows:
(a) Chip dissociation, cleaning and pretreatment: after the SOI wafer is dissociated into small pieces, the surface of the wafer is cleaned and activated.
The cleavage mode of the SOI wafer in this embodiment is not limited, and a dicing blade, a dicing saw, or other cleavage modes may be used for cleavage.
The method for cleaning and activating the SOI wafer in this embodiment is not limited either. The organic removal treatment can be respectively carried out by acetone, methanol, isopropanol (alcohol) and deionized water in sequence, which is beneficial to reducing scraps and some organic impurities. And carrying out deep cleaning and surface activation treatment on the primarily cleaned flakes by using a concentrated sulfuric acid hydrogen peroxide mixture and a hydrofluoric acid solution. And placing the deeply cleaned sample on a hot plate or in an oven for fully baking and drying. Radio frequency plasma stripper may also be used for surface cleaning and activation.
(b) Spin-coating photoresist 12: after the surface cleaning treatment is finished, photoresist 12 is spin-coated on the surface of the sample wafer, the spin-coating thickness is determined by the spin-coating rotating speed and time of a spin-coating machine, and the glue layers with different thicknesses can be obtained through different settings. Pre-baking of the sample is required before post-spin exposure to harden the photoresist 12 and de-water, and the specific temperature and duration are determined by the different photoresist characteristics.
In this embodiment, the type of mask for photoresist 12 is not limited, and the electron beam exposure process should be selected for the subsequent lithography according to the minimum feature size (100 nm) of the devices in embodiments 1 and 2. The electron beam resist 12, such as PMMA, ma-N2403, etc., is correspondingly required, and the electron beam resist 12 is selected. PMMA and Ma-N2403 are positive photoresist and negative photoresist respectively, the ultraviolet exposure part of the positive photoresist is removed when developing, and conversely, the ultraviolet exposure area of the negative photoresist is reserved after developing. Other photoresists 12, such as SU-8, AZ5214, etc., may also be used when the device feature size is large.
(c) Transferring patterns by ultraviolet lithography: and (3) placing the sample into an electron beam exposure machine, and leading in a layout which is drawn and generated in advance to set and run, wherein the exposure is determined according to different glue characteristics. Contact uv exposure may also be used when the device feature size is large.
(d) Developing: after exposure is completed, the corresponding developing solution is used for developing according to different photoresists 12 to obtain patterns, and then the samples are placed on a hot plate for post-baking, so that the etching resistance of the photoresist is improved. The development time and post-bake temperature and time are determined based on the characteristics of the photoresist 12.
(e) ICP etching Si: and uniformly coating heat-conducting glue on the back surface of the post-baked sample, placing the sample into ICP equipment for etching, setting etching time according to the etching rate of the formula, and transferring the pattern of the photoresist 12 onto Si.
(f) Removing the photoresist 12: after the etching is completed, the residual photoresist 12 mask is removed and the sample is baked.
In this embodiment, the method for removing the mask of the photoresist 12 is not limited, and methods such as ultrasonic immersion in acetone solution or dry photoresist removal by oxygen plasma can be used.
(g) And (3) manufacturing an upper cladding: and manufacturing an upper cladding layer of the device according to the actual design condition of the device. For devices requiring an upper cladding of silicon dioxide 11 or other low refractive index semiconductor materials, fabricating the upper cladding above Si by chemical vapor deposition; the device with the polymer upper cladding requirement adopts a spin coating polymer mode to prepare the cladding; when the upper cladding is air, this step may be omitted.
The technical process for preparing the device can show that the polygonal multi-input multi-output mode converter provided by the application can be prepared by one-step etching, and has simple process.
Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains.
It is to be understood that the application is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof.

Claims (8)

1. A polygonal multiple-input multiple-output mode converter, wherein the polygonal multiple-input multiple-output mode converter is a 2 (n+1) or 2n+1-sided multiple-input multiple-output mode converter, N > 0, the polygonal multiple-input multiple-output mode converter comprises a silicon dioxide substrate, a top silicon layer and a low refractive index material cladding layer, the top silicon layer comprises a first input waveguide, a second input waveguide … … Nth input waveguide, a first mode conversion region, a second mode conversion region … … Nth mode conversion region, a first output waveguide and a second output waveguide … … Nth output waveguide, the first mode conversion region and the second mode conversion region … … Nth mode conversion region are divided into a plurality of units, the states of the units are etched or not etched, and when the units are in an etched state, the internal material is a low refractive index material; when the unit is in a non-etching state, the internal material is silicon;
the first input waveguide, the first mode conversion region and the first output waveguide form a first mode converter, the second input waveguide, the second mode conversion region and the second output waveguide form a second mode converter … …, and the nth input waveguide, the nth mode conversion region and the nth output waveguide form an nth mode converter.
2. The polygonal-shaped mimo mode converter of claim 1 wherein the first and second input waveguides … … have an N-th input waveguide input wavelength in the range 1520 nm to 1580 nm.
3. The polygonal-shaped mimo mode converter of claim 1, wherein the thickness of the silicon dioxide substrate is 3 μm and the thickness of the top layer silicon is 220 nm.
4. The polygonal-shaped multiple-input multiple-output mode converter of claim 1, wherein the cells achieve an etched state by a single step etch.
5. The polygonal-shaped mimo mode converter of claim 1, wherein the state of the cell is that when etched, the etching depth is the same as the thickness of the top silicon.
6. The polygonal-type multiple-input multiple-output mode converter according to claim 1, wherein all mode converters use the same design method for an i-th mode converter for realizing conversion from an X-order mode to a Y-order mode, wherein X, y=0, 1, 2 … …, 1+.i+.n, the design method is as follows:
(1) Dividing an i-th mode conversion area into A multiplied by B identical units, wherein each unit is used as a pixel point;
(2) The pixel points are all in an etching-free state and are in an initial state, and an initial quality factor FOMmax of the polygonal MIMO mode converter in the initial state is calculated;
(3) For all the pixel points of the ith mode conversion area, starting from the first pixel point in sequence, changing the state of the pixel points, calculating a new quality factor temp, if temp > FOMmax, keeping the state of the pixel points unchanged, and assigning temp to FOMmax; if temp < FOMmax, the pixel point is changed back to the original state;
(4) Repeating the step (3) for a plurality of iterations, and outputting a device pattern which is the device structure finally obtained by optimization when the FOM reaches the maximum value.
7. The polygonal multiple input multiple output mode converter according to claim 6, wherein for an i-th mode converter for realizing conversion of an X-order mode to a Y-order mode, if x=y, the i-th mode converter is for changing a propagation path of the mode.
8. The polygonal-shaped mimo mode converter of claim 6, wherein the quality factorFOMThe calculation formula of (2) is as follows:
，
wherein ,Mis the number of wavelength channels, and when the X-order mode is input from the ith input waveguide at a certain wavelength, the transmittance of the X-order mode monitored by the ith output waveguide ist 1 The transmittance of the Y-order mode is monitored as followst 0 。
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