CN116072769B - Silicon wafer processing production line - Google Patents
Silicon wafer processing production line Download PDFInfo
- Publication number
- CN116072769B CN116072769B CN202310244727.3A CN202310244727A CN116072769B CN 116072769 B CN116072769 B CN 116072769B CN 202310244727 A CN202310244727 A CN 202310244727A CN 116072769 B CN116072769 B CN 116072769B
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- line
- boat
- feeding
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 237
- 239000010703 silicon Substances 0.000 title claims abstract description 237
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 235
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 238000012545 processing Methods 0.000 title claims abstract description 37
- 235000012431 wafers Nutrition 0.000 claims abstract description 242
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 192
- 229910052796 boron Inorganic materials 0.000 claims abstract description 192
- 238000000034 method Methods 0.000 claims abstract description 89
- 230000008569 process Effects 0.000 claims abstract description 87
- 238000007599 discharging Methods 0.000 claims abstract description 75
- 238000012546 transfer Methods 0.000 claims abstract description 63
- 238000003032 molecular docking Methods 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000011144 upstream manufacturing Methods 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 238000007689 inspection Methods 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 5
- 230000032258 transport Effects 0.000 description 44
- 230000003321 amplification Effects 0.000 description 14
- 238000003199 nucleic acid amplification method Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/6773—Conveying cassettes, containers or carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a silicon wafer processing production line which comprises a feeding system, a discharging system, a boron expansion process host, a laser system and a silicon wafer transfer system, wherein the feeding system is used for feeding silicon wafers; the blanking system is used for blanking the silicon wafer, the boron-expanding process host is positioned at the downstream positions of the feeding system and the blanking system, the laser system is used for slotting the silicon wafer subjected to primary boron expansion, and the laser system is arranged side by side with the feeding system and the blanking system; the silicon wafer transfer system is arranged among the feeding system, the discharging system, the laser system and the boron expansion process host, and the silicon wafer processing production line integrates a primary boron expansion process, a laser grooving process and a secondary boron expansion process on one production line, so that the silicon wafer processing production line has the advantages of compact structure, small occupied area and high circulation efficiency, and is beneficial to improving the production efficiency and reducing the manufacturing cost.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a silicon wafer processing production line.
Background
In the photovoltaic production industry of the prior art, a secondary boron diffusion process is generally used for preparing a battery piece, and the process steps of the process need to be as follows: primary boron diffusion (forming a first doping layer and a first mask layer), laser grooving (removing the first doping layer and the first mask layer in a designated area to expose an N-type crystalline silicon substrate, and cleaning the grooving position), and secondary boron diffusion (forming a second doping layer and a second mask layer), wherein one production line is required to be prepared in each working procedure. The secondary boron diffusion process is lengthy, two boron diffusion lines are usually needed to be prepared and are respectively used for primary boron diffusion and secondary boron diffusion, the occupied area of equipment is very large, and the production cost is high.
Disclosure of Invention
The invention aims to provide a silicon wafer processing production line which integrates a primary boron expansion process, a laser grooving process and a secondary boron expansion process on one production line, has a compact structure, small occupied area and high circulation efficiency, and is beneficial to improving the production efficiency and reducing the manufacturing cost.
In order to achieve the technical effects, the technical scheme of the invention is as follows:
the invention discloses a silicon wafer processing production line, which comprises the following steps: the feeding system is used for feeding the silicon wafers; the blanking system is used for blanking the silicon wafers; the boron expansion process host is positioned at the downstream positions of the feeding system and the discharging system; the laser system is used for grooving the silicon wafer subjected to primary boron expansion, and is arranged side by side with the feeding system and the discharging system; the silicon wafer transfer system is arranged among the feeding system, the discharging system, the laser system and the boron amplification process host, transfers the silicon wafer transmitted by the feeding system to the boron amplification process host for primary boron amplification, transfers the silicon wafer subjected to primary boron amplification to the laser system, transfers the silicon wafer subjected to slotting to the boron amplification process host for secondary boron amplification, and transfers the silicon wafer subjected to secondary boron amplification to the discharging system.
In some embodiments, the silicon wafer relay system comprises: the feeding transportation line is used for transporting the silicon wafer transmitted by the feeding system to the boron expansion process host for primary boron expansion or transporting the grooved silicon wafer to the boron expansion process host for secondary boron expansion; and the blanking transportation line is arranged in parallel with the feeding transportation line and is used for transporting the silicon wafer subjected to primary boron expansion to the laser system or transporting the silicon wafer subjected to secondary boron expansion to the blanking system.
In some specific embodiments, the loading transport line includes a first loading transport line and a second loading transport line, where the first loading transport line is used to transport the silicon wafer transported by the loading system to the boron expanding process host for primary boron expansion, and the second loading transport line transports the grooved silicon wafer to the boron expanding process host for secondary boron expansion;
the blanking transportation line comprises a first blanking transportation line and a second blanking transportation line, the first blanking transportation line is used for transporting the silicon wafer subjected to primary boron expansion to the laser system, and the second blanking transportation line is used for transporting the silicon wafer subjected to secondary boron expansion to the blanking system; wherein:
the first feeding conveying line and the second discharging conveying line are arranged side by side, and the second feeding conveying line and the first discharging conveying line are arranged side by side.
In some more specific embodiments, the silicon wafer transfer system further comprises a first basket lifting device and a primary boron expansion feeding and splicing device which are arranged at two ends of the first feeding and conveying line, and a second basket lifting device and a secondary boron expansion discharging and splicing device which are arranged at two ends of the second discharging and conveying line; the silicon wafer processing production line further comprises a basket transferring device arranged between the feeding system, the discharging system, the first basket lifting device and the second basket lifting device.
In some more specific embodiments, the silicon wafer transfer system further comprises a secondary boron expanding feed tab device disposed downstream of the second feed conveyor line and a primary boron expanding feed tab device disposed upstream of the first feed conveyor line.
In some embodiments, the silicon wafer relay system further comprises: the manipulator is used for receiving and transferring the silicon wafers transported by the feeding transport line and the discharging transport line; the boat structure conveying device is arranged at the downstream of the manipulator and is used for conveying the boat structure for loading the silicon wafers; the boat connection device is used for transporting a boat frame loaded with the boat structure to the boron expanding process host; and the boat carrying device is used for transferring the boat structure between the boat structure conveying device and the boat connecting device.
In some specific embodiments, the boat docking device is provided with a plurality of boat frames arranged side by side.
In some more specific embodiments, the boat structure transporting device includes a first boat structure transporting line and a second boat structure transporting line, where the first boat structure transporting line and the second boat structure transporting line are respectively disposed at two ends of the boat carrying device, and the first boat structure transporting line is disposed corresponding to the feeding system and the discharging system, and the second boat structure transporting line is disposed corresponding to the laser system.
In some embodiments, the laser system comprises: the third feeding transportation line is used for receiving the silicon wafers transmitted by the silicon wafer transfer system; the third blanking conveying line is used for conveying the silicon wafer to the silicon wafer transfer system; the laser grooving device is used for grooving the silicon wafer; the silicon wafer carrying device is used for enabling the silicon wafer to circulate among the third feeding conveying line, the third discharging conveying line and the laser grooving device; the sucking disc device is arranged at the tail end of the third blanking conveying line.
In some specific embodiments, the laser grooving device comprises a turntable, a plurality of grooving stations and a plurality of detection stations, wherein the grooving stations and the detection stations are arranged on the turntable, and the silicon wafer carrying device is multiple so as to realize that a plurality of silicon wafers flow among the third blanking conveying line, the detection stations, the grooving stations and the third blanking conveying line.
In some embodiments, the boron amplification process host includes a primary boron amplification module and a secondary boron amplification module disposed in parallel, the primary boron amplification module for a primary boron amplification process and the secondary boron amplification module for a secondary boron amplification process.
The silicon wafer processing production line has the beneficial effects that: in the actual working process, the silicon wafer transfer system transfers the silicon wafer transmitted by the feeding system to the boron expansion process host machine to perform primary boron expansion on the silicon wafer, the silicon wafer transfer system transfers the silicon wafer subjected to primary boron expansion to the laser system to perform laser grooving on the silicon wafer after the primary boron expansion is finished, the silicon wafer transfer system transfers the grooved silicon wafer to the boron expansion process host machine to perform secondary boron expansion on the silicon wafer after the laser grooving is finished, the silicon wafer transfer system transfers the silicon wafer subjected to secondary boron expansion to the blanking system, and the function of integrating the primary boron expansion process, the laser grooving process and the secondary boron expansion process on one production line is realized, so that the whole silicon wafer processing production line has compact structure, small occupied area and high circulation efficiency, and is beneficial to improving the production efficiency and reducing the manufacturing cost.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is a schematic diagram of a silicon wafer processing line according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a loading system and a unloading system of a silicon wafer processing line according to an embodiment of the present invention;
FIG. 3 is a schematic view showing a partial structure of a silicon wafer transfer system of a silicon wafer processing line according to an embodiment of the present invention;
FIG. 4 is a schematic view of another partial structure of a wafer transfer system of a wafer processing line according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a laser system structure of a silicon wafer processing line according to an embodiment of the present invention.
Reference numerals:
1. a feeding system; 2. a blanking system; 3. a flower basket transferring device; 4. a first basket lifting device; 5. a first feeding transport line; 6. a primary boron expansion feeding splicing device; 7. a secondary boron expansion blanking splicing device; 8. a second blanking transportation line; 9. a second basket lifting device; 10. a manipulator; 11. a terminal sucker device; 12. a first tooth ejecting device; 13. a first boat structure transport line; 14. a boat carrying device; 15. a boat docking device; 16. a purification station; 17. a main machine furnace body; 18. a second boat structure transporting line; 19. a second top tooth means; 20. a primary boron-expanding blanking splicing device; 21. a second feeding transportation line; 22. a third feeding transportation line; 23. a silicon wafer handling device; 24. a laser grooving device; 241. detecting a station; 242. a grooving station; 25. a third blanking transportation line; 26. a suction cup device; 27. a first blanking transport line; 28. and the secondary boron-expanding feeding splicing device.
Detailed Description
In order to make the technical problems solved, the technical scheme adopted and the technical effects achieved by the invention more clear, the technical scheme of the invention is further described below by a specific embodiment in combination with the attached drawings.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, features defining "first", "second" may include one or more such features, either explicitly or implicitly, for distinguishing between the descriptive features, and not sequentially, and not lightly. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The specific structure of the silicon wafer processing line according to the embodiment of the present invention is described below with reference to fig. 1 to 5.
The invention discloses a silicon wafer processing production line, which is shown in fig. 1 and comprises a feeding system 1, a discharging system 2, a boron expansion process host, a laser system and a silicon wafer transfer system. The silicon wafer transfer system transfers the silicon wafer transmitted by the feeding system 1 to the boron-expanding process host machine for primary boron expansion, transfers the silicon wafer subjected to primary boron expansion to the laser system, transfers the silicon wafer subjected to primary boron expansion to the boron-expanding process host machine for secondary boron expansion, and transfers the silicon wafer subjected to secondary boron expansion to the blanking system 2.
It can be understood that in the actual working process, the silicon wafer transfer system transfers the silicon wafer transmitted by the feeding system 1 to the boron expansion process host machine to perform primary boron expansion on the silicon wafer, the silicon wafer transfer system transfers the silicon wafer subjected to primary boron expansion to the laser system to perform laser grooving on the silicon wafer after the primary boron expansion is finished, the silicon wafer transfer system transfers the grooved silicon wafer to the boron expansion process host machine to perform secondary boron expansion on the silicon wafer after the laser grooving is finished, and the silicon wafer transfer system transfers the silicon wafer subjected to secondary boron expansion to the blanking system 2 after the secondary boron expansion, so that the function of integrating the primary boron expansion process, the laser grooving process and the secondary boron expansion process on one production line is realized, the whole silicon wafer processing production line is compact in structure, small in occupied area, high in transfer efficiency, and beneficial to improving the production efficiency and reducing the manufacturing cost.
Optionally, the main unit of the boron expansion process comprises a primary boron expansion module and a secondary boron expansion module which are arranged in parallel, wherein the primary boron expansion module is used for a primary boron expansion process, and the secondary boron expansion module is used for a secondary boron expansion process. It can be understood that the process conditions used in the primary boron expansion process and the secondary boron expansion process may be different, and in this embodiment, the primary boron expansion process and the secondary boron expansion process are performed by using two primary boron expansion modules and two secondary boron expansion modules which are arranged in parallel, so that the process is convenient, and the production efficiency is improved.
Optionally, the boron expansion process host comprises a boron expansion module, and the boron expansion module can perform a primary boron expansion process and a secondary boron expansion process, so that the overall productivity of the whole silicon wafer transfer system is higher, and the use satisfaction degree of users is improved.
In some embodiments, as shown in fig. 3, the silicon wafer transfer system includes a loading transport line and a discharging transport line, where the loading transport line is used for transporting the silicon wafer transferred by the loading system 1 to the boron expanding process host for primary boron expansion, or transporting the grooved silicon wafer to the boron expanding process host for secondary boron expansion, and the discharging transport line is arranged in parallel with the loading transport line, and the discharging transport line is used for transporting the silicon wafer subjected to primary boron expansion to the laser system, or transporting the silicon wafer subjected to secondary boron expansion to the discharging system 2.
It can be understood that in the actual working process, the silicon wafer is transported to the feeding transporting line by the feeding system 1, then the silicon wafer is transported to the boron-expanding process host of the boron-expanding process host by the feeding transporting line to carry out primary boron expansion, the silicon wafer subjected to primary boron expansion can be transported to the laser system by the discharging transporting line after the primary boron expansion is completed to carry out laser grooving, the silicon wafer output by the laser system is transported to the boron-expanding process host to carry out secondary boron expansion by the feeding transporting line after the laser grooving is completed, and the silicon wafer subjected to secondary boron expansion is transported to the discharging system 2 by the discharging transporting line after the secondary boron expansion is completed so as to realize the silicon wafer processing process.
In some specific embodiments, as shown in fig. 3, the loading transport line includes a first loading transport line 5 and a second loading transport line 21, where the first loading transport line 5 is used to transport the silicon wafer transported by the loading system 1 to the boron expanding process host for primary boron expansion, and the second loading transport line 21 transports the grooved silicon wafer to the boron expanding process host for secondary boron expansion. The unloading transportation line includes first unloading transportation line 27 and second unloading transportation line 8, and first unloading transportation line 27 is used for transporting the silicon chip that expands through once boron to laser system, and second unloading transportation line 8 transports the silicon chip that expands through secondary boron to unloading system 2, and first material loading transportation line 5 sets up side by side with second unloading transportation line 8, and second material loading transportation line 21 and first unloading transportation line 27 set up side by side. It can be understood that the feeding transportation line is split into the first feeding transportation line 5 and the second feeding transportation line 21, and is respectively used for transporting the silicon wafer transmitted by the feeding system 1 to the boron-expanding process host machine for primary boron expansion and transporting the grooved silicon wafer to the boron-expanding process host machine for secondary boron expansion, the discharging transportation line is split into the first discharging transportation line 27 and the second discharging transportation line 8, and is respectively used for transporting the silicon wafer subjected to primary boron expansion to the laser system and transporting the silicon wafer subjected to secondary boron expansion to the discharging system 2, and the transfer of the silicon wafer completed by using the four transportation lines can further improve the working efficiency of the silicon wafer processing production line.
In some more specific embodiments, as shown in fig. 3, the silicon wafer transfer system further comprises a first basket lifting device 4 and a primary boron expansion feeding tab device 6 arranged at two ends of the first feeding transport line 5, and a second basket lifting device 9 and a secondary boron expansion discharging tab device 7 arranged at two ends of the second discharging transport line 8. The silicon wafer processing production line also comprises a flower basket transferring device 3 arranged among the feeding system 1, the discharging system 2, the first flower basket lifting device 4 and the second flower basket lifting device 9. It can be understood that in the actual working process, the feeding system 1 and the discharging system 2 transport baskets loaded with silicon wafers, before the silicon wafers enter the boron expansion process host, the silicon wafers need to be firstly separated and then inserted, the silicon wafers are cleaned, the silicon wafers subjected to secondary boron expansion are also firstly separated and then inserted, and then cleaned, in the embodiment, the first basket lifting device 4, the primary boron expansion feeding splicing device 6, the second basket lifting device 9 and the secondary boron expansion discharging splicing device 7 are additionally arranged, so that the separation and reinsertion of the silicon wafers before entering the boron expansion process host and the separation and reinsertion of the silicon wafers subjected to secondary boron expansion can be realized, the silicon wafers entering the boron expansion process host are ensured to be cleaner, the processing yield is improved, the silicon wafers subjected to secondary boron expansion are ensured to be cleaner, and the product yield is improved.
In some more specific embodiments, as shown in fig. 3, the wafer transfer system further includes a secondary boron expanding feed tab device 28 disposed downstream of the second feed conveyor line 21 and a primary boron expanding feed tab device 20 disposed upstream of the first feed conveyor line 27. It will be appreciated that the addition of the secondary boron expanded feed tab device 28 and the primary boron expanded feed tab device 20 ensures that the wafer is stably transferred between the second feed conveyor line 21 and the first feed conveyor line 27 between the boron expanded process host and the laser system.
In some embodiments, as shown in fig. 4, the silicon wafer transfer system further includes a robot 10, a boat structure transporting device, a boat docking device 15, and a boat carrying device 14, wherein the robot 10 is configured to receive the silicon wafers transported by the loading transporting line and the unloading transporting line, the boat structure transporting device is disposed downstream of the robot 10, the boat structure transporting device is configured to transport the boat structure loaded with the silicon wafers, the boat docking device 15 is configured to transport the boat frame loaded with the boat structure to the boron expanding process host, and the boat carrying device 14 is configured to transfer the boat structure between the boat structure transporting device and the boat docking device 15. It will be appreciated that in the actual working process, the silicon wafers can be loaded into the boat structures under the carrying of the manipulator 10, the boat structures are carried onto the boat connection device 15 under the action of the boat carrying device 14, and finally are transported into the boron expanding process host under the action of the boat connection device 15, so that the number of the silicon wafers entering the boron expanding process host at one time is large, and the improvement of the productivity of the silicon wafer processing production line is facilitated.
In some embodiments, the boat docking device 15 is provided with a plurality of boat racks arranged side by side. Therefore, a plurality of boat frames can be used alternately, and when one boat frame enters the boron expansion process host, the other boat frames can be used as the boat frames for caching to realize the caching of the boat structure, so that the working efficiency of the silicon wafer processing production line is further improved.
In some more specific embodiments, as shown in fig. 4, the boat structure transporting device includes a first boat structure transporting line 13 and a second boat structure transporting line 18, where the first boat structure transporting line 13 and the second boat structure transporting line 18 are respectively disposed at two ends of the boat carrying device 14, and the first boat structure transporting line 13 is disposed corresponding to the feeding system 1 and the discharging system 2, and the second boat structure transporting line 18 is disposed corresponding to the laser system. Therefore, the transportation of the silicon wafer between the feeding system 1, the discharging system 2 and the silicon wafer transfer system can be carried out simultaneously with the transportation of the silicon wafer between the laser system and the silicon wafer transfer system, so that the working efficiency of the silicon wafer processing production line is further improved.
In some embodiments, as shown in fig. 5, the laser system includes a third feeding and transporting line 22, a third discharging and transporting line 25, a laser grooving device 24, a wafer handling device 23, and a chuck device 26, where the third feeding and transporting line 22 is used for receiving the wafer transferred by the wafer transfer system, the third discharging and transporting line 25 is used for transporting the wafer to the wafer transfer system, the laser grooving device 24 is used for grooving the wafer, the wafer handling device 23 is used for making the wafer circulate among the third feeding and transporting line 22, the third discharging and transporting line 25, and the laser grooving device 24, and the chuck device 26 is disposed at the end of the third discharging and transporting line 25. It can be understood that, in the actual working process, the third feeding and transporting line 22 is used for receiving the silicon wafer transmitted by the silicon wafer transfer system, the silicon wafer handling device 23 carries the silicon wafer onto the laser grooving device 24, after the laser grooving is completed, the silicon wafer handling device 23 carries the silicon wafer onto the third discharging and transporting line 25 and cleans and outputs the silicon wafer through the sucker device 26, so that the silicon wafer can be automatically circulated in the laser system, and the working efficiency of the silicon wafer processing and production line is further improved.
In some specific embodiments, as shown in fig. 5, the laser grooving device 24 includes a turntable, and a plurality of grooving stations 242 and a plurality of inspection stations 241 disposed on the turntable, and the silicon wafer handling device 23 is plural to enable the plurality of silicon wafers to circulate among the third blanking transport line 25, the inspection stations 241, the grooving stations 242, and the third blanking transport line 25.
It will be appreciated that in the actual working process, one of the silicon wafer handling devices 23 adsorbs and places a silicon wafer on one of the detecting stations 241 on the laser grooving device 24, the turntable rotates 90 ° to groove the detected silicon wafer, the other silicon wafer handling device 23 adsorbs and places the grooved silicon wafer on the third discharging and transporting line 25, and the third discharging and transporting line 25 transports the silicon wafer to complete film washing through the sucker device 26. Therefore, the quality of the silicon wafer can be monitored, the flow of the silicon wafer circulation can be further accelerated, and the working efficiency is improved.
Examples:
a silicon wafer processing line according to an embodiment of the present invention is described below with reference to fig. 1 to 5.
As shown in fig. 1, the silicon wafer processing production line comprises a feeding system 1, a discharging system 2, a boron expansion process host, a laser system and a silicon wafer transfer system. The feeding system 1 is used for feeding silicon wafers and comprises two parallel feeding and transporting pipelines, the discharging system 2 is used for discharging the silicon wafers and comprises two parallel discharging and transporting pipelines, the boron expanding process host purifying table 16 and the main body furnace body 17, the boron expanding process host is located at the downstream positions of the feeding system 1 and the discharging system 2, the laser system is used for slotting the silicon wafers subjected to primary boron expansion, and the laser system is arranged side by side with the feeding system 1 and the discharging system 2.
As shown in fig. 2 to 4, the silicon wafer transfer system comprises a loading and transporting line, a discharging and transporting line, a first basket lifting device 4, a primary boron expanding and loading and splicing device 6, a primary boron expanding and unloading and splicing device 20, a second basket lifting device 9, a secondary boron expanding and unloading and splicing device 7, a secondary boron expanding and loading and splicing device 28, a manipulator 10, a boat structure transporting device, a boat docking device 15 and a boat carrying device 14. The feeding transportation line comprises a first feeding transportation line 5 and a second feeding transportation line 21, the first feeding transportation line 5 is used for transporting the silicon wafers transmitted by the feeding system 1 to the boron-expanding process host machine for primary boron expansion, and the second feeding transportation line 21 is used for transporting the grooved silicon wafers to the boron-expanding process host machine for secondary boron expansion. The unloading transportation line includes first unloading transportation line 27 and second unloading transportation line 8, and first unloading transportation line 27 is used for transporting the silicon chip that expands through once boron to laser system, and second unloading transportation line 8 transports the silicon chip that expands through secondary boron to unloading system 2, and first material loading transportation line 5 sets up side by side with second unloading transportation line 8, and second material loading transportation line 21 and first unloading transportation line 27 set up side by side. The first basket lifting device 4 and the primary boron expansion feeding splicing device 6 are respectively arranged at two ends of the first feeding conveying line 5. The second basket lifting device 9 and the secondary boron expansion blanking splicing device 7 are respectively arranged at two ends of the second blanking conveying line 8. The primary boron expansion blanking tab device 20 is arranged upstream of the first blanking transport line 27, and the secondary boron expansion loading tab device 28 is arranged downstream of the second loading transport line 21. The manipulator 10 is used for receiving the silicon wafers transported by the feeding transport line and the discharging transport line, the boat structure transporting device is arranged at the downstream of the manipulator 10 and used for transporting the boat structure loaded with the silicon wafers, the boat docking device 15 is used for transporting the boat frame loaded with the boat structure to the boron expanding process host, and the boat carrying device 14 is used for transferring the boat structure between the boat structure transporting device and the boat docking device 15. The boat structure conveying device comprises a first boat structure conveying line 13 and a second boat structure conveying line 18, the first boat structure conveying line 13 and the second boat structure conveying line 18 are respectively arranged at two ends of the boat carrying device 14, the first boat structure conveying line 13 is arranged corresponding to the feeding system 1 and the discharging system 2, and the second boat structure conveying line 18 is arranged corresponding to the laser system.
As shown in fig. 5, the laser system includes a third feeding and transporting line 22, a third discharging and transporting line 25, a laser grooving device 24, a silicon wafer handling device 23 and a suction cup device 26, wherein the third feeding and transporting line 22 is used for receiving the silicon wafer transferred by the silicon wafer transfer system, the third discharging and transporting line 25 is used for transporting the silicon wafer to the silicon wafer transfer system, the laser grooving device 24 is used for grooving the silicon wafer, the silicon wafer handling device 23 is used for enabling the silicon wafer to circulate among the third feeding and transporting line 22, the third discharging and transporting line 25 and the laser grooving device 24, and the suction cup device 26 is arranged at the tail end of the third discharging and transporting line 25. The laser grooving device 24 comprises a turntable, a plurality of grooving stations 242 and a plurality of detection stations 241, wherein the grooving stations 242 and the detection stations 241 are arranged on the turntable, and the number of the silicon wafer carrying devices 23 is two so as to realize the circulation of a plurality of silicon wafers among the third blanking conveying line 25, the detection stations 241, the grooving stations 242 and the third blanking conveying line 25.
The working flow of the silicon wafer processing production line of this embodiment is as follows:
the feeding system 1 receives the basket transported by the AGV feeding trolley and transports the basket to the basket transporting device 3, and the basket transporting device 3 transports the basket to the first basket lifting device 4;
a first feeding and transporting line 5 (an upper decoding device, a silicon wafer caching device and a silicon wafer regularizing device are sequentially arranged on the first feeding and transporting line 5) connected with the first basket lifting device 4 sequentially outputs silicon wafers in the basket to a primary boron-expanding feeding and splicing device 6;
the manipulator 10 adjusts the position of the manipulator through the self chuck device 11 to absorb the silicon wafer in the boron-spread feeding and splicing device 6 once, and conveys the silicon wafer to a position corresponding to the first boat structure conveying line 13, the positioning device of the first boat structure conveying line 13 moves to the position right above the first top tooth device 12, the first top tooth device 12 is lifted, the silicon wafer absorbed by the terminal chuck device 11 is placed in the first top tooth device 12, the first top tooth device 12 descends, and the silicon wafer is stored in the boat structure on the positioning device of the first boat structure conveying line 13;
the tail end lifting device of the boat carrying device 14 carries the boat structure into the boat connecting device 15, a transmission device is arranged below the boat connecting device 15, and the boat enters the purifying table 16 through the transmission device;
the purifying table 16 corresponds to the host furnace body 17, the boat connection device 15 enters the host furnace body 17 to perform primary boron expansion (six heat furnaces are taken as the host furnace body 17, wherein three heat furnaces are primary boron expansion modules for primary boron expansion, and the other three heat furnaces are secondary boron expansion modules for secondary boron expansion), so that the purifying table has the advantages of being convenient for process parameter adjustment and better in flexibility;
after primary boron expansion, the boat connecting device 15 is conveyed out of the host furnace body 17 and enters the purification table 16 for cooling, and after cooling, the boat connecting device 15 moves to a position corresponding to the boat carrying device 14;
the tail end lifting device of the boat carrying device 14 carries the boat structure into the positioning device of the second boat structure conveying line 18, the positioning moving device of the second boat structure conveying line 18 moves to be right above the second top tooth device 19, the second top tooth device 19 moves upwards to eject the silicon wafer in the boat structure, the tail end sucker device 11 of the manipulator 10 adsorbs the silicon wafer, and the silicon wafer is placed in the primary boron expanding blanking splicing device 20;
the primary boron-expansion blanking splicing device 20 conveys the silicon wafer to a first blanking conveying line 27, (two regulating devices and two buffer devices are arranged on the first blanking conveying line 27), and the first blanking conveying line 27 conveys the silicon wafer to a third feeding conveying line 22;
one of the silicon wafer carrying devices 23 adsorbs and places the silicon wafer on one detection station 241 on the laser grooving device 24, the turntable rotates 90 degrees to groove the detected silicon wafer, and the other silicon wafer carrying device 23 adsorbs and places the grooved silicon wafer on the third blanking conveying line 25;
the suction cup device 26 conveys the silicon wafer on the third discharging conveying line 25 to the second feeding conveying line 21 (the second feeding conveying line 21 is provided with two buffer devices and one regulating device), and the second feeding conveying line 21 conveys the silicon wafer to the secondary boron expanding feeding splicing device 28;
the manipulator 10 transfers the silicon wafer to a position corresponding to the second boat structure conveying line 18 by adjusting the position of the manipulator and adsorbing the silicon wafer in the secondary boron expansion feeding tab device 28 by the tail end sucker device 11, the positioning device of the second boat structure conveying line 18 moves to the position right above the second top tooth device 19, the second top tooth device 19 is lifted, the silicon wafer adsorbed by the tail end sucker device 11 is placed in the second top tooth device 19, the second top tooth device 19 descends, and the silicon wafer is stored in the boat structure on the positioning device of the second boat structure conveying line 18;
the tail end lifting device of the boat carrying device 14 carries the boat structure into the boat connecting device 15, a transmission device is arranged below the boat connecting device 15, and the boat enters the purifying table 16 through the transmission device;
the purifying table 16 corresponds to the main machine furnace body 17, and the boat connection device 15 enters the main machine furnace body 17 to perform secondary boron expansion;
after secondary boron expansion, the boat connecting device 15 is conveyed out of the host furnace body 17 and enters the purification table 16 for cooling, and after cooling, the boat connecting device 15 moves to a position corresponding to the boat carrying device 14;
the tail end lifting device of the boat carrying device 14 carries the boat structure into the positioning device of the first boat structure conveying line 13, the positioning moving device of the first boat structure conveying line 13 moves to the position right above the first top tooth device 12, the first top tooth device 12 moves upwards to eject the silicon wafer in the boat structure, the tail end sucker device 11 of the manipulator 10 adsorbs the silicon wafer, and the silicon wafer is placed in the secondary boron expansion blanking splicing device 7;
the secondary boron expansion blanking splicing device 7 conveys the silicon wafer to a second blanking conveying line 8, (an upper decoding device, a sheet resistance measuring device, a PL device, two buffer devices and a regulating device are arranged on the second blanking conveying line 8);
the second unloading transportation line 8 transports the silicon chip to the second basket lifting device 9, and the basket transfer device 3 transports the basket on the second basket lifting device 9 to the unloading system 2, and the unloading system 2 transports the basket to the AGV unloading dolly in, accomplishes whole process flow.
In the description of the present specification, reference to the term "some embodiments," "other embodiments," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is merely exemplary of the present invention, and those skilled in the art should not be considered as limiting the invention, since modifications may be made in the specific embodiments and application scope of the invention in light of the teachings of the present invention.
Claims (7)
1. The utility model provides a silicon chip processing line which characterized in that includes: a feeding system (1), a discharging system (2) and a boron expansion process host; the feeding system (1) is used for feeding the silicon wafer, the discharging system (2) is used for discharging the silicon wafer, the main machine of the boron expansion process comprises a plurality of hot furnaces, part of the hot furnaces is configured as a primary boron expansion module, the other part of the hot furnaces is configured as a secondary boron expansion module, and the primary boron expansion module and the secondary boron expansion module simultaneously carry out a boron expansion process; alternatively, the plurality of furnaces are configured as a primary boron expansion module or a secondary boron expansion module simultaneously; the primary boron expansion module performs a boron expansion process in a first time period, and the secondary boron expansion module performs a boron expansion process in a second time period; the process conditions of the primary boron expansion module and the secondary boron expansion module are different;
the laser system is used for slotting the silicon wafer subjected to primary boron expansion, and is arranged at one side of the feeding system (1) and one side of the discharging system (2); the silicon wafer transfer system is used for transferring the silicon wafers among the feeding system (1), the discharging system (2), the laser system and the boron-diffusion process host; wherein: the silicon wafer transfer system comprises a loading and conveying line, a discharging and conveying line, a manipulator (10), a first top tooth device (12), a second top tooth device (19) and a boat connection device (15); the feeding conveying line is used for conveying the silicon wafers transmitted by the feeding system (1) to the primary boron expansion module, or conveying the grooved silicon wafers to the secondary boron expansion module, the discharging conveying line is arranged in parallel with the feeding conveying line, and the discharging conveying line is used for conveying the silicon wafers subjected to primary boron expansion to the laser system, or conveying the silicon wafers subjected to secondary boron expansion to the discharging system (2); or the feeding of the primary boron expansion module and the discharging of the secondary boron expansion module can be performed simultaneously;
the manipulator (10) is used for transferring the silicon wafer among the feeding conveying line, the discharging conveying line, the first tooth pushing device (12) and the second tooth pushing device (19); the silicon wafer transfer system further comprises a first basket lifting device (4) and a primary boron expansion feeding and splicing device (6) which are arranged at two ends of the first feeding conveying line (5), a second basket lifting device (9) and a secondary boron expansion blanking and splicing device (7) which are arranged at two ends of the second discharging conveying line (8), a secondary boron expansion feeding and splicing device (28) which is arranged at the downstream of the second feeding conveying line (21), and a primary boron expansion blanking and splicing device (20) which is arranged at the upstream of the first discharging conveying line (27); the first feeding conveying line (5), the second feeding conveying line (21) and the second discharging conveying line (8) are provided with a buffer device and a regulating device; the silicon wafer transfer system further comprises a boat structure conveying device, wherein the boat structure conveying device is used for conveying boat structures for loading silicon wafers, the first top tooth device (12) is used for conveying the silicon wafers on the primary boron expansion feeding and splicing device (6) to the boat structures conveyed by the boat structure conveying device, and the second top tooth device (19) is used for conveying the silicon wafers on the boat structures conveyed by the boat structure conveying device to the primary boron expansion discharging and splicing device (20); the boat connecting device (15) is provided with a boat frame, a transmission device is arranged below the boat connecting device (15), and the boat connecting device (15) is used for conveying the boat frame loaded with the boat structure to the boron expanding process host;
the laser system comprises a third feeding conveying line (22), a third discharging conveying line (25), a laser grooving device (24), a silicon wafer carrying device (23) and a sucking disc device (26), wherein the silicon wafer carrying device (23) carries silicon wafers to the third discharging conveying line (25) and outputs the silicon wafers through the sucking disc device (26), and the third feeding conveying line (22) is used for receiving the silicon wafers transmitted by the silicon wafer transfer system; the third blanking conveying line (25) is used for conveying the silicon wafer to the silicon wafer transfer system; the silicon wafer carrying device (23) is used for transferring silicon wafers among the third feeding conveying line (22), the third discharging conveying line (25) and the laser grooving device (24), and the sucker device (26) is arranged at the tail end of the third discharging conveying line (25); the laser grooving device (24) comprises a turntable, and a plurality of grooving stations (242) and a plurality of detection stations (241) are arranged on the turntable.
2. Silicon wafer processing line according to claim 1, characterized in that the first loading conveyor line (5) is arranged side by side with the second unloading conveyor line (8), the second loading conveyor line (21) being arranged side by side with the first unloading conveyor line (27).
3. The silicon wafer processing production line according to claim 1, further comprising a basket transferring device (3) provided between the feeding system (1), the discharging system (2), the first basket lifting device (4) and the second basket lifting device (9).
4. A silicon wafer processing line according to any one of claims 2 to 3, characterized in that the robot (10) is adapted to receive and transfer silicon wafers transported by the loading and unloading transport lines, and the robot (10) is located upstream of the boat structure transport means;
the silicon wafer transfer system also comprises a boat carrying device (14), wherein the boat carrying device (14) is used for transferring boat structures between the boat structure conveying device and the boat connecting device (15).
5. The silicon wafer processing line according to claim 4, wherein the boat docking device (15) is provided with a plurality of boat frames arranged side by side.
6. The silicon wafer processing production line according to claim 4, wherein the boat structure transporting device comprises a first boat structure transporting line (13) and a second boat structure transporting line (18), the first boat structure transporting line (13) and the second boat structure transporting line (18) are respectively arranged at two ends of the boat carrying device (14), the first boat structure transporting line (13) is arranged corresponding to the feeding system (1) and the discharging system (2), and the second boat structure transporting line (18) is arranged corresponding to the laser system.
7. The silicon wafer processing line according to claim 6, wherein the plurality of silicon wafer handling devices (23) are provided to transfer the plurality of silicon wafers between the third blanking transport line (25), the inspection station (241), the grooving station (242) and the third blanking transport line (25).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310244727.3A CN116072769B (en) | 2023-03-15 | 2023-03-15 | Silicon wafer processing production line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310244727.3A CN116072769B (en) | 2023-03-15 | 2023-03-15 | Silicon wafer processing production line |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116072769A CN116072769A (en) | 2023-05-05 |
| CN116072769B true CN116072769B (en) | 2024-02-02 |
Family
ID=86180380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310244727.3A Active CN116072769B (en) | 2023-03-15 | 2023-03-15 | Silicon wafer processing production line |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116072769B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444631A (en) * | 2018-11-05 | 2019-11-12 | 协鑫集成科技股份有限公司 | N-type cell structure based on selective emitter and preparation method thereof |
| CN115425113A (en) * | 2022-09-28 | 2022-12-02 | 浙江晶科能源有限公司 | Battery preparation integration system and battery preparation integration method |
-
2023
- 2023-03-15 CN CN202310244727.3A patent/CN116072769B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444631A (en) * | 2018-11-05 | 2019-11-12 | 协鑫集成科技股份有限公司 | N-type cell structure based on selective emitter and preparation method thereof |
| CN115425113A (en) * | 2022-09-28 | 2022-12-02 | 浙江晶科能源有限公司 | Battery preparation integration system and battery preparation integration method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116072769A (en) | 2023-05-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5696135B2 (en) | Wafer handling system and method | |
| CN114203856B (en) | Low-voltage horizontal phosphorus diffusion production line for solar photovoltaic cell | |
| JPH0616206A (en) | Transportation system inside clean room | |
| CN114203861A (en) | Multifunctional system for low-voltage horizontal heat treatment of solar photovoltaic cell | |
| CN113140483A (en) | Wafer conveying method and wafer conveying platform | |
| CN116072769B (en) | Silicon wafer processing production line | |
| CN219861556U (en) | PVD automatic feeding and discharging equipment | |
| CN219329248U (en) | Sucking disc subassembly, go up unloading mechanism and battery production facility | |
| CN116759487A (en) | Graphite boat loading and unloading machine and silicon wafer loading and unloading method | |
| CN114203611A (en) | Automatic feeding and discharging system for vertical furnace and vertical furnace body | |
| CN111129216B (en) | Equipment for preparing double-sided passivation film of PERC battery and using method thereof | |
| CN217387108U (en) | Transfer device | |
| CN213026160U (en) | Automatic loading and unloading device for texturing and cleaning line of crystalline silicon solar cell | |
| CN217387107U (en) | Silicon wafer processing equipment | |
| CN112582498A (en) | Method for continuously producing crystalline silicon solar cells | |
| CN216354107U (en) | Online thermal oxidation charging equipment | |
| TWI548110B (en) | Substrate automatic conveying system | |
| CN111540812A (en) | Silicon wafer automatic feeding and discharging system matched with solar cell production equipment | |
| CN211079409U (en) | Crystalline silicon solar cell diffusion furnace for continuous production and production line | |
| CN113589146A (en) | Method and system for testing edge-emitting semiconductor laser chip | |
| CN219310980U (en) | Wafer polishing system | |
| CN216980521U (en) | Automatic feeding and discharging system for vertical furnace and vertical furnace body | |
| CN211339683U (en) | PECVD equipment for manufacturing heterojunction solar cell and complete set of PECVD equipment | |
| CN212322971U (en) | Semiconductor processing system | |
| CN115663070B (en) | Silicon wafer processing technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |