CN116054952A - Monolithic integrated OTDM signal generation chip based on Nyquist optical pulse - Google Patents

Monolithic integrated OTDM signal generation chip based on Nyquist optical pulse Download PDF

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Publication number
CN116054952A
CN116054952A CN202310040416.5A CN202310040416A CN116054952A CN 116054952 A CN116054952 A CN 116054952A CN 202310040416 A CN202310040416 A CN 202310040416A CN 116054952 A CN116054952 A CN 116054952A
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optical
mach
zehnder modulator
nyquist
optical pulse
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万萦菲
吉晨
郭清水
王启超
熊祎缇
池超旦
刘奕利
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Zhejiang Lab
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Zhejiang Lab
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50Transmitters
    • H04B10/516Details of coding or modulation
    • H04B10/524Pulse modulation
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50Transmitters
    • H04B10/501Structural aspects
    • H04B10/503Laser transmitters
    • H04B10/505Laser transmitters using external modulation
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04QSELECTING
    • H04Q11/00Selecting arrangements for multiplex systems
    • H04Q11/0001Selecting arrangements for multiplex systems using optical switching
    • H04Q11/0003Details
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04QSELECTING
    • H04Q11/00Selecting arrangements for multiplex systems
    • H04Q11/04Selecting arrangements for multiplex systems for time-division multiplexing
    • H04Q11/0421Circuit arrangements therefor

Abstract

The invention discloses a single-chip integrated OTDM signal generating chip based on Nyquist optical pulse, which comprises a semiconductor material substrate, a distributed feedback laser integrated on the substrate, a first Mach-Zehnder modulator, a second Mach-Zehnder modulator, a semiconductor optical amplifier, a 1×m multimode interference coupler, an optical delay line array, a Mach-Zehnder modulator array and an m×1 multimode interference coupler. The first Mach-Zehnder modulator and the second Mach-Zehnder modulator are cascaded and are used for modulating continuous laser into periodically-adjustable Nyquist optical pulses; the optical delay line array is used for changing the relative delay of the optical pulse signals, and the m paths of optical pulse signals are modulated by the Mach-Zehnder modulator and are combined by the m multiplied by 1 multimode interference coupler. The chip replaces the traditional mode-locked laser with the DFB laser and the two Mach-Zehnder modulators in cascade connection to serve as an on-chip OTDM light source, and high-speed OTDM signal transmission can be achieved.

Description

Monolithic integrated OTDM signal generation chip based on Nyquist optical pulse
Technical Field
The invention belongs to the technical field of photon integration, and particularly relates to a monolithic integrated OTDM signal generating chip based on Nyquist optical pulses.
Background
With the high-speed development of cloud computing and data centers, on-chip integrated optical interconnection and optical processing are key technologies for breaking through traditional electronic bottlenecks by virtue of unique advantages in integration level, speed, bandwidth, power consumption and the like. The OTDM technology uses wideband photoelectric device to replace electronic device, avoids the bandwidth limitation caused by high-speed electronic device, and realizes ultra-high speed transmission by transmitting multiple paths of optical signals in different time slots of the same channel in a time division multiplexing mode, thus achieving the purpose of greatly expanding capacity.
In the prior art, the optical time division multiplexing technology requires a light source to generate ultra-narrow optical pulses with high repetition rate and quite small duty ratio, and the narrower the pulse width is, the more paths can be multiplexed, and the wider the spectrum width is. Light sources that meet these requirements are mainly fiber ring mode-locked lasers, semiconductor mode-locked lasers, electro-absorption modulated lasers (EML), gain-switched DFB lasers, etc. The optical fiber annular mode-locked laser has a complex structure and is difficult to integrate on-chip; the semiconductor mode-locked laser is easy to generate chirp phenomenon, and the pulse quality is low; the pulse width generated by the electroabsorption modulation laser is wider, so that multiplexing cannot be realized; the gain switch semiconductor laser has high technical requirements on a modulation circuit and low output laser power.
In summary, in the prior art, OTDM light sources based on mode-locked lasers, electro-absorption modulated lasers (EML), and gain-switched DFB lasers are difficult to be applied to monolithically integrated OTDM signal generating chips due to complicated structures, insufficient quality of generated optical pulses, and the like. On the premise, the Nyquist optical pulse generated by the DFB laser light source and the cascade Mach-Zehnder modulator has the advantages of high spectrum utilization rate, narrow pulse width, high repeatability and the like, and is an ideal low-cost OTDM chip light source. However, the current OTDM signal generating chip based on Nyquist optical pulse monolithic integration still lacks a specific implementation method. Therefore, how to provide an OTDM signal generating chip with low cost, easy integration and high signal quality is one of the problems to be solved.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a monolithic integrated OTDM signal generating chip based on Nyquist optical pulses.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a first aspect of an embodiment of the present invention provides a monolithically integrated OTDM signal generating chip based on Nyquist optical pulses, including:
a substrate of a semiconductor material having a base,
the distributed feedback laser, the first Mach-Zehnder modulator, the second Mach-Zehnder modulator, the semiconductor optical amplifier, the 1×m multimode interference coupler, the optical delay line array, the Mach-Zehnder modulator array and the m×1 multimode interference coupler are integrated on the semiconductor material substrate and are connected in sequence; wherein m is a self-defined positive integer.
Further, any two components of the distributed feedback laser, the first Mach-Zehnder modulator, the second Mach-Zehnder modulator, the semiconductor optical amplifier, the 1×m multimode interference coupler, the optical delay line array, the Mach-Zehnder modulator array and the m×1 multimode interference coupler are connected through a passive waveguide structure.
Further, the distributed feedback laser is used for generating a continuous optical signal and transmitting the continuous optical signal to the first Mach-Zehnder modulator;
the first Mach-Zehnder modulator externally modulates the received continuous optical signal and transmits the output optical signal to the second Mach-Zehnder modulator;
the second Mach-Zehnder modulator externally modulates the received optical signal and outputs Nyquist optical pulses;
the semiconductor optical amplifier is used for gaining the Nyquist optical pulse output by the second Mach-Zehnder modulator;
the 1 Xm multimode interference coupler comprises 1 input end and m output ends, wherein the input end receives Nyquist optical pulses after amplification gain, and the m output ends are connected with m paths of optical delay lines in the optical delay line array 7;
the optical delay line array comprises m paths of optical delay lines, and relative delay is provided for m paths of equal-power optical pulse signals output by the 1 Xm multimode interference coupler respectively and independently;
the Mach-Zehnder modulator array comprises m Mach-Zehnder modulators, and each Mach-Zehnder modulator MZI carries out high-speed external modulation on optical signals received on a corresponding channel and then transmits the optical signals to the m multiplied by 1 multimode interference coupler;
the m×1 multimode interference coupler comprises m input ends and 1 output end, and is used for coupling the received m channels of optical signals to the 1-path optical waveguide so as to realize time division multiplexing.
Further, the first Mach-Zehnder modulator loads an external radio frequency signal and a direct current bias voltage according to the transmission rate requirement, externally modulates a received continuous optical signal, outputs 3 flat optical frequency combs with locked phases, and transmits the signals to the second Mach-Zehnder modulator; and the frequency of the radio frequency signal of the first Mach-Zehnder modulator is 3 times that of the radio frequency signal loaded on the second Mach-Zehnder modulator.
Further, the second mach-zehnder modulator loads an external radio frequency signal and a direct current bias voltage according to a transmission rate requirement, and externally modulates a received optical signal to obtain 9 phase-locked flat optical frequency combs, wherein the 9 phase-locked flat optical frequency combs are sine function-shaped Nyquist optical pulses in a time domain.
Further, the optical delay line array sets the relative delay time of the nth path of optical delay line array to be (N-1)/mF, where n=1.2 … m and F is the repetition frequency of the Nyquist optical pulse.
Further, each Mach-Zehnder modulator in the Mach-Zehnder modulator array carries out F Gbps-PAM4 high-speed modulation on the optical signals received on the corresponding channel, so that the single-channel data transmission rate reaches 2F Gbps, and the total transmission rate reaches 8F Gbps, wherein F is the repetition frequency of Nyquist optical pulses.
Further, m is 4.
A second aspect of an embodiment of the present invention provides a Nyquist optical pulse-based monolithically integrated OTDM signal generating circuit, which is characterized by comprising a circuit board main body and a Nyquist optical pulse-based monolithically integrated OTDM signal generating chip as claimed in any one of claims 1 to 8, wherein the Nyquist optical pulse-based monolithically integrated OTDM signal generating chip is disposed on the circuit board main body.
A third aspect of an embodiment of the present invention provides a Nyquist optical pulse based monolithically integrated OTDM signal generating device, which is characterized by comprising a housing and the Nyquist optical pulse based monolithically integrated OTDM signal generating circuit as claimed in claim 9, wherein the Nyquist optical pulse based monolithically integrated OTDM signal generating circuit is arranged on the housing.
Compared with the prior art, the invention has the following beneficial effects: the invention provides a single-chip integrated OTDM signal generating chip based on Nyquist optical pulse, which replaces the traditional OTDM light source with Nyquist optical pulse, realizes the single-chip integration of a laser, a modulator, a semiconductor optical amplifier, a multimode interference coupler and an optical delay line array by photon integrated PIC technology, has small chip size, low cost and low bandwidth requirement on a Mach-Zehnder modulator of a single channel, and can realize high-speed OTDM signal transmission.
Drawings
Other features, objects and advantages of the present invention will become more apparent upon reading of the detailed description of non-limiting embodiments made with reference to the following drawings.
Fig. 1 is a schematic structural diagram of a monolithic integrated OTDM signal generating chip based on Nyquist optical pulses according to the present invention.
Fig. 2 is a schematic structural diagram of a monolithically integrated OTDM signal generating chip based on Nyquist optical pulses according to embodiment 1.
Fig. 3 is a 3-wire optical comb spectrum diagram corresponding to 3 optical frequency combs output by the first mach-zehnder modulator MZM.
Fig. 4 is a time domain waveform diagram of the output of the first mach-zehnder modulator MZM.
Fig. 5 is a 9-wire optical comb spectrum diagram corresponding to 9 optical frequency combs output by the second mach-zehnder modulator MZM.
Fig. 6 is a time domain waveform diagram of the output of the second mach-zehnder modulator MZM.
Fig. 7 is an eye diagram of an OTDM signal generating chip after single-channel PAM4 modulation.
Fig. 8 is an eye diagram of an OTDM signal generating chip modulated by four-channel PAM4 and after combination.
In the figure: a semiconductor material substrate-1; a distributed feedback laser DFB-2; a first Mach-Zehnder modulator MZI-3; a second Mach-Zehnder modulator MZI-4; a semiconductor optical amplifier SOA-5;1 Xm multimode interference coupler MMI-601;1 x 4 multimode interference coupler MMI-602; an optical delay line array-7; mach-Zehnder modulator array MZI-8; m×1 multimode interference coupler MMI-901;4 x 1 multimode interference coupler MMI-902.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the invention. Rather, they are merely examples of apparatus and methods consistent with aspects of the invention as detailed in the accompanying claims.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any or all possible combinations of one or more of the associated listed items.
It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, these information should not be limited by these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the invention. The word "if" as used herein may be interpreted as "at … …" or "at … …" or "responsive to a determination", depending on the context.
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
Fig. 1 is a schematic structural diagram of a monolithic integrated OTDM signal generating chip based on Nyquist optical pulses according to the present invention. Comprising the following steps:
a substrate 1 of a semiconductor material,
and a distributed feedback laser 2, a first mach-zehnder modulator 3, a second mach-zehnder modulator 4, a semiconductor optical amplifier 5, a 1 x m multimode interference coupler 601, an optical delay line array 7, a mach-zehnder modulator array 8, and an m x 1 multimode interference coupler 901, which are integrated on the semiconductor material substrate 1 and connected in this order; wherein m is a self-defined positive integer.
The chip provided by the invention replaces the traditional mode-locked laser by cascading the DFB laser and the two Mach-Zehnder modulators to serve as an on-chip OTDM light source.
The solid lines connecting the above components in fig. 1 represent passive waveguide structures, through which the connection of the above components and the transmission of optical signals between the components are performed, where the transmission direction of the optical signals between the components is the direction indicated by the arrow in fig. 1.
The working process of the monolithically integrated OTDM signal generating chip based on Nyquist optical pulse provided by the invention is as follows: the first Mach-Zehnder modulator and the second Mach-Zehnder modulator are cascaded and are used for modulating continuous laser emitted by the distributed feedback laser into periodically-adjustable Nyquist optical pulses; the semiconductor optical amplifier provides gain for the channel; the 1×m multimode interference coupler divides the optical pulse equal power into m paths of optical pulse signals, the optical delay line array is used for changing the relative delay of the optical pulse signals, and the m paths of optical pulse signals are modulated by the Mach-Zehnder modulator and are combined by the m×1 multimode interference coupler.
Specifically, the distributed feedback laser DFB 2 is configured to generate a continuous optical signal and transmit the continuous optical signal to the first mach-zehnder modulator MZI 3.
The first mach-zehnder modulator MZI 3 loads an external radio frequency signal and a dc bias voltage according to a transmission rate requirement, externally modulates a received continuous optical signal to output 3 flat optical frequency combs (fig. 3) with locked phases, and transmits the signals to the second mach-zehnder modulator MZI 4. The time domain sinc waveform of the MZM output of the first mach-zehnder modulator is shown in fig. 4.
The second mach-zehnder modulator MZI 4 loads an external radio frequency signal and a direct current bias voltage according to the transmission rate requirement, and further externally modulates the received optical signal to obtain 9 phase-locked flat optical frequency combs (fig. 5), where the 9 phase-locked flat optical frequency combs are Nyquist optical pulses in a sinc function shape in the time domain (fig. 6).
Further, the Nyquist optical pulse has a rectangular frequency spectrum, and its time domain pulse waveform has the shape of a sinc function (i.e., sin (x)/x).
In particular, the frequency of the radio frequency signal of the first mach-zehnder modulator MZI 3 is 3 times the frequency of the radio frequency signal loaded on the second mach-zehnder modulator MZI 4. Because the two modulated signals satisfy the relation of 3 times of frequency, 9 flat optical frequency combs which correspond to Nyquist optical pulses in the time domain can be generated in the frequency domain through cascading of the first Mach-Zehnder modulator MZI 3 and the second Mach-Zehnder modulator MZI 4.
The frequency of the radio frequency signal loaded on the second mach-zehnder modulator is the repetition frequency F of the Nyquist optical pulse, and the repetition frequency F of the Nyquist optical pulse can be adjusted according to the transmission rate requirement.
The semiconductor optical amplifier SOA5 amplifies the Nyquist optical pulse output from the second mach-zehnder modulator and inputs the amplified signal to the 1×m multimode interference coupler MMI 601.
The 1×m multimode interference coupler MMI 601 includes 1 input end and m output ends, where the 1 input end is connected to the output end of the second mach-zehnder modulator MZI 4, and the m output ends are respectively connected to m optical delay lines in the optical delay line array 7.
The m optical delay lines in the optical delay line array 7 are used for equally dividing the 1 optical signal output by the semiconductor optical amplifier SOA5 into m optical signals. The m paths of optical signals are respectively transmitted in the m paths of optical delay lines, different optical delay lines are designed to be different lengths, and different relative delays are respectively provided for the m paths of equal-power optical pulse signals, so that the time division multiplexing of the optical signals is realized. After different delays, the m paths of optical signals are respectively input into m Mach-Zehnder modulators in the Mach-Zehnder modulator array MZI 8.
Further, the optical delay line array 7 sets the relative delay time of the nth optical delay line array to be (N-1)/mF, where n=1.2 … m and F is the repetition frequency of the Nyquist optical pulse.
Each mach-zehnder modulator in the mach-zehnder modulator array MZI 8 performs high-speed external modulation on the optical signal received on the corresponding channel, and then transmits the optical signal to the mx 1 multimode interference coupler MMI 901.
Further, each Mach-Zehnder modulator in the Mach-Zehnder modulator array carries out F Gbps-PAM4 high-speed modulation on the optical signals received on the corresponding channel, so that the single-channel data transmission rate reaches 2F Gbps, and the total transmission rate reaches 8F Gbps, wherein F is the repetition frequency of Nyquist optical pulses.
The m×1 multimode interference coupler MMI 901 includes m input ends and 1 output end, where the m input ends are respectively connected with m mach-zehnder modulators in the mach-zehnder modulator array MZI 8, and are used to couple the received optical signals of m channels onto the 1-path optical waveguide, so as to implement time division multiplexing.
Example 1
In this example, when m prefers 4, a monolithically integrated OTDM signal generating chip based on Nyquist optical pulses provided by the present invention will be further described.
Fig. 2 is a schematic diagram of a monolithically integrated OTDM signal generating chip based on Nyquist optical pulses according to an embodiment of the present invention. As shown in fig. 2, the Nyquist optical pulse-based monolithically integrated OTDM signal generating chip includes a semiconductor material substrate 1, and a distributed feedback laser DFB 2, a first mach-zehnder modulator MZI 3, a second mach-zehnder modulator MZI 4, a semiconductor optical amplifier SOA5, a 1×4 multimode interference coupler MMI 602, an optical delay line array 7, a mach-zehnder modulator array MZI 8, and a 4×1 multimode interference coupler MMI 902, which are integrated on the semiconductor material substrate 1 and sequentially connected through a passive waveguide structure.
In particular, in this example, the optical delay line array comprises 4 optical delay lines, each of which individually provides a relative delay for the 4 equal power optical pulse signals. According to the transmission requirement, the optical delay line array 7 designs different optical delay lines with different lengths, so that the relative delay time of the nth optical delay line array is (N-1)/4F, where n=1, 2,3,4, and F is the repetition frequency of Nyquist optical pulses.
In this example, the mach-zehnder modulator array includes 4 mach-zehnder modulators, each of which performs F Gbps-PAM4 high-speed modulation on the optical signal received on the corresponding channel, so that the single-channel data transmission rate reaches 2F Gbps. The 4×1 multimode interference coupler MMI 902 couples the received 4-channel optical signals onto a 1-channel optical waveguide to achieve time division multiplexing. The total transmission rate of the 4 paths reaches 8F Gbps, wherein F is the repetition frequency of Nyquist optical pulses.
Example 2
In one embodiment of the invention, a monolithically integrated OTDM signal generating chip is fabricated using Photonic Integrated (PIC) technology. And integrating the distributed feedback laser, the Mach-Zehnder modulator, the semiconductor optical amplifier, the multimode interference coupler and the optical delay line array on the same III-V compound semiconductor material substrate through multiple MOCVD epitaxial growth so as to realize monolithic integration of a plurality of active devices and passive devices.
The iii-v compound semiconductor material may be any one of InP, gaAs, inGaAs, inGaAsP, and the specific material selected may be determined according to practical applications, and is not limited herein.
Example 3
In one embodiment of the present invention, simulation testing was performed on the Nyquist optical pulse-based monolithically integrated OTDM signal generating chip provided in embodiment 2. When m=4, the repetition frequency of Nyquist optical pulse is 20GHz, the total transmission rate is 4×20gbaud/s, and the total transmission rate is 4×20×2=160 Gbit/s in PAM4 modulation format. The first Mach-Zehnder modulator MZI radio frequency: 60GHz. The second Mach-Zehnder modulator MZI2 radio frequency: 20GHz. The relative delay time of the optical delay line array is respectively 0ps, 12.5ps, 25ps and 37.5ps.
The eye diagram of the OTDM signal generating chip modulated by single-channel PAM4 is shown in fig. 7. The OTDM signal generating chip is modulated by four-channel PAM4 and the combined eye diagram is shown in fig. 8. As can be seen from fig. 7 and 8, each pulse of the single channel is separated by 50ps, and after OTDM multiplexing and combining, the pulse is separated by 12.5ps.
In summary, the invention provides a monolithic integrated OTDM signal generating chip based on Nyquist optical pulse, which replaces the traditional OTDM light source with Nyquist optical pulse, and implements monolithic integration of a laser, a modulator, a semiconductor optical amplifier, a multimode interference coupler and an optical delay line array by using a photonic integrated PIC technology.
It should be noted that, the embodiment of the present invention further provides a Nyquist optical pulse-based monolithic integrated OTDM signal generating circuit, which may include a circuit board main body and the Nyquist optical pulse-based monolithic integrated OTDM signal generating chip in the foregoing embodiment, where the Nyquist optical pulse-based monolithic integrated OTDM signal generating chip is disposed on the circuit board main body.
The embodiment of the invention also provides a Nyquist optical pulse-based monolithic integrated OTDM signal generating device, which can comprise a shell and the Nyquist optical pulse-based monolithic integrated OTDM signal generating circuit in the embodiment, wherein the Nyquist optical pulse-based monolithic integrated OTDM signal generating circuit is arranged on the shell.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains. The specification and examples are to be regarded in an illustrative manner only.
It is to be understood that the present application is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof.

Claims (10)

1. A Nyquist optical pulse-based monolithically integrated OTDM signal generating chip comprising:
a substrate (1) of semiconductor material,
the distributed feedback laser (2), the first Mach-Zehnder modulator (3), the second Mach-Zehnder modulator (4), the semiconductor optical amplifier (5), the 1×m multimode interference coupler (601), the optical delay line array (7), the Mach-Zehnder modulator array (8) and the m×1 multimode interference coupler (901) are integrated on the semiconductor material substrate (1) and are connected in sequence; wherein m is a self-defined positive integer.
2. The Nyquist optical pulse based monolithically integrated OTDM signal generating chip of claim 1, wherein any two components of the distributed feedback laser (2), the first mach-zehnder modulator (3), the second mach-zehnder modulator (4), the semiconductor optical amplifier (5), the 1 x m multimode interference coupler (601), the optical delay line array (7), the mach-zehnder modulator array (8) and the m x 1 multimode interference coupler (901) are connected by a passive waveguide structure.
3. A Nyquist optical pulse based monolithically integrated OTDM signal generating chip according to claim 1, characterized in that the distributed feedback laser (2) is adapted to generate a continuous optical signal and to transmit to the first mach-zehnder modulator (3);
the first Mach-Zehnder modulator (3) externally modulates the received continuous optical signal and transmits the output optical signal to the second Mach-Zehnder modulator (4);
the second Mach-Zehnder modulator (4) externally modulates the received optical signal and outputs a Nyquist optical pulse;
the semiconductor optical amplifier (5) is used for gaining the Nyquist optical pulse output by the second Mach-Zehnder modulator (4);
the 1 Xm multimode interference coupler (601) comprises 1 input end and m output ends, wherein the input end receives Nyquist optical pulses after amplification gain, and the m output ends are connected with m paths of optical delay lines in the optical delay line array 7;
the optical delay line array (7) comprises m paths of optical delay lines, and the m paths of equal-power optical pulse signals output by the 1 Xm multimode interference coupler (601) are respectively and independently delayed;
the Mach-Zehnder modulator array (8) comprises m Mach-Zehnder modulators, and each Mach-Zehnder modulator MZI carries out high-speed external modulation on an optical signal received on a corresponding channel and then transmits the optical signal to the m multiplied by 1 multimode interference coupler (901);
the m×1 multimode interference coupler (901) includes m input ends and 1 output end, and is configured to couple the received optical signals of m channels onto a 1-path optical waveguide, so as to implement time division multiplexing.
4. A Nyquist optical pulse based monolithic integrated OTDM signal generating chip as in claim 1 or 3, wherein the first mach-zehnder modulator (3) loads external radio frequency signals and dc bias voltages according to transmission rate requirements, externally modulates the received continuous optical signals, outputs 3 phase locked flat optical frequency combs, and transmits to the second mach-zehnder modulator (4); and the frequency of the radio frequency signal of the first Mach-Zehnder modulator is 3 times that of the radio frequency signal loaded on the second Mach-Zehnder modulator.
5. A monolithically integrated OTDM signal generating chip based on a Nyquist optical pulse according to claim 1 or 3, wherein the second mach-zehnder modulator (4) loads an external radio frequency signal and a dc bias voltage according to a transmission rate requirement, and externally modulates the received optical signal to obtain 9 phase-locked flat optical frequency combs, and the 9 phase-locked flat optical frequency combs are Nyquist optical pulses in a sinc function shape in a time domain.
6. A Nyquist optical pulse based monolithically integrated OTDM signal generating chip according to claim 1 or 3, wherein the optical delay line array (7) sets the N-th optical delay line array relative delay time to (N-1)/mF, where N = 1.2 … m and F is the repetition frequency of the Nyquist optical pulses.
7. A Nyquist optical pulse based monolithically integrated OTDM signal generating chip as claimed in claim 1 or 3, wherein each mach-zehnder modulator in the mach-zehnder modulator array performs F Gbps-PAM4 high speed modulation on the optical signal received on the corresponding channel to achieve a single channel data transmission rate of 2F Gbps and a total transmission rate of 8FGbps, wherein F is the repetition frequency of the Nyquist optical pulses.
8. The Nyquist optical pulse-based monolithically integrated OTDM signal generating chip as recited in claim 1, wherein m is 4.
9. A Nyquist optical pulse-based monolithically integrated OTDM signal generating circuit comprising a circuit board body and a Nyquist optical pulse-based monolithically integrated OTDM signal generating chip as claimed in any one of claims 1 to 8, wherein the Nyquist optical pulse-based monolithically integrated OTDM signal generating chip is disposed on the circuit board body.
10. A Nyquist optical pulse based monolithically integrated OTDM signal generating device comprising a housing and a Nyquist optical pulse based monolithically integrated OTDM signal generating circuit as claimed in claim 9, wherein the Nyquist optical pulse based monolithically integrated OTDM signal generating circuit is provided on the housing.
CN202310040416.5A 2023-01-11 2023-01-11 Monolithic integrated OTDM signal generation chip based on Nyquist optical pulse Pending CN116054952A (en)

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