CN116053909B - High-energy end pump pulse laser - Google Patents

High-energy end pump pulse laser Download PDF

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CN116053909B
CN116053909B CN202310339941.7A CN202310339941A CN116053909B CN 116053909 B CN116053909 B CN 116053909B CN 202310339941 A CN202310339941 A CN 202310339941A CN 116053909 B CN116053909 B CN 116053909B
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crystal
bars
pumping source
lens group
laser
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CN116053909A (en
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吴权
姜明
李洪威
宋志胜
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Beijing Zhongxing Times Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/042—Arrangements for thermal management for solid state lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet
    • H01S3/1643—YAG

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Lasers (AREA)

Abstract

The invention discloses a high-energy end pump pulse laser, which comprises a pumping source, a heat radiation module acting on the pumping source, a focusing lens group, a total reflection lens, nd, YAG crystals, polaroids, quarter wave plates, electro-optical Q-switching crystals, a wedge lens group and an output lens, wherein the focusing lens group, the total reflection lens, the Nd are sequentially arranged along an emission light path of the pumping source; the pumping source adopts at least two bars with different dominant wavelengths to form an LD array module, and characteristic peaks of absorption spectrums of 790nm-820 nm are selected as the dominant wavelengths by the at least two bars with different dominant wavelengths. The wide spectrum LD array module of the pump source is formed by selecting the bars with multiple wavelengths, so that the absorption of the front end face of the Nd-YAG crystal on the focused pump light is reduced under the premise of ensuring enough energy storage of the pulse laser at different temperatures, and the crystal heat effect is reduced.

Description

High-energy end pump pulse laser
Technical Field
The invention belongs to the technical field of laser diode pumping all-solid-state laser, and particularly relates to a high-energy (more than 100mJ energy) end pumping pulse laser capable of inhibiting ASE and parasitic oscillation.
Background
The light source of the laser measuring device adopted in the laser guidance field still adopts an all-solid-state laser, and according to different LD pumping modes, two methods of side pumping and end pumping are generally adopted, the greatest difference between the two methods is that the pumping sources irradiate the crystal, the side pumping is that the pumping sources form a ring to wrap the crystal to excite the pumping, the end pumping is that the pumping sources irradiate the light-emitting end face of the crystal through optical fiber conduction, the two methods have advantages, and different schemes can be selected to design the laser under different combat platform requirements.
For a pulse laser for realizing high-energy laser output by a conventional side pumping scheme, for a side pumping module with higher peak power of more than 6kW, the pumping uniformity directly determines the beam quality, and because the number of bars is large, the design difficulty of the pumping uniformity of the side pumping module is high and is easily influenced by temperature due to the fact that the number of bars is limited by the heat dissipation, indium welding and packaging processes of the bars. The advantage of end pumping can just make up for the deficiency of side pumping, when realizing better mode matching, can obtain the laser output of better beam quality relative to side pumping scheme, the laser beam divergence angle is little, and the facula mode is more near the Gaussian distribution output that center is strong, edge fade, in implementing laser guidance process, good facula distribution is favorable to the facula tracker to realize the calculation to target position coordinate to improve guidance precision.
For realizing a high-energy pulse laser with the energy of more than 100mJ, a relatively mature and easy-to-realize technical route is a side-pump scheme, the end pump is usually required to realize the energy output of 100mJ through an oscillating stage and an amplifying stage MOPA technical route, the single-rod oscillating stage is not easy to realize the high-energy output, the root cause is that two important technical bottlenecks exist, namely, under the condition of dynamic Q adjustment, two core problems of Amplified Spontaneous Emission (ASE) and parasitic oscillation exist, if the design parameters can be optimized from the selection of a laser resonant cavity and device parameters, a certain method can be found to inhibit the two core problems, and under the condition that the single rod is not amplified, the laser energy with the energy of more than 100mJ is output, so that the method is feasible in theory.
Therefore, there is a need for a pulsed laser capable of achieving high energy, high beam quality laser spot output for end pumps with ASE and parasitic oscillations suppressed.
Disclosure of Invention
Aiming at the problem that the end-pumped laser in the prior art cannot realize high-energy and high-quality light beam output due to ASE and parasitic oscillation, the invention aims to provide a pulse laser capable of inhibiting the ASE and parasitic oscillation, and the pulse laser can also output high-quality light beams with the amplitude of more than 100 mJ.
In order to achieve the technical purpose, the invention adopts the following technical scheme:
a high-energy end pump pulse laser comprises a pumping source, a heat radiation module acting on the pumping source, a focusing lens group, a total reflection lens, nd: YAG crystals, a polaroid, a quarter wave plate, an electro-optical Q-switching crystal, a wedge lens group and an output lens, wherein the focusing lens group, the total reflection lens, the Nd: YAG crystals, the polaroid, the quarter wave plate, the electro-optical Q-switching crystal, the wedge lens group and the output lens are sequentially arranged along an emission light path of the pumping source;
the pumping source adopts at least two bars with different dominant wavelengths to form an LD array module, and the characteristic peaks of absorption spectrums with the wavelengths of 790nm-820 nm are selected as the dominant wavelengths by the at least two bars with different dominant wavelengths;
the spectrum range of the dominant wavelength of each bar is at least M-6~M nanometers or M-3 to M+3 nanometers or M to M+6 nanometers, wherein M is the dominant wavelength of the bar.
By adopting the technical scheme, the wide spectrum LD array module of the pump source is formed by selecting the bars with multiple wavelengths in the absorption spectrum range of the Nd-YAG crystal, so that the absorption of the front end face of the Nd-YAG crystal to the focused pump light is reduced under the premise of ensuring enough energy storage of the laser at different temperatures, and the crystal heat effect is reduced.
In an embodiment, the LD array module is formed by arranging three bars with dominant wavelengths of 796nm, 808nm and 814nm along the fast axis direction. The three wavelengths are selected based on the absorption characteristics of the Nd: YAG crystal for the pump light, since the Nd: YAG crystal has the highest absorption coefficient at the three dominant wavelengths.
In an embodiment, the three bars of 796nm, 808nm and 814nm are respectively 4-10, each bar has a power of 200W, and the power of the LD array module formed by these bars is at least 4kW. When the working temperature is higher, the wavelength of the 796nm bar drifts to the right, so that the number of 796nm bars can be properly increased and the numbers of 808nm bars and 814nm bars can be reduced when the high-temperature environment works.
In one embodiment, the Nd: YAG crystal is a cylindrical crystal rod mounted between an upper crystal heat sink and a lower crystal heat sink, and a cylindrical channel is formed between the upper crystal heat sink and the lower crystal heat sink that accommodates the rod-shaped Nd: YAG crystal. The structure is favorable for fixing the cylindrical crystal rod and effectively conducting away heat generated in the process of reflecting laser by the Nd-YAG crystal.
In one placeIn an embodiment, nd in the Nd-YAG crystal 3+ The doping concentration of the (C) is 0.1% -0.2%. Because the LD focusing light spot focused on the front end of the crystal rod is small, absorption saturation is easy to generate, thereby increasing thermal effect to deteriorate light beam quality, limiting the conversion of pump energy storage into laser energy of effective oscillation, and adopting 0.1% -0.2% of Nd: YAG crystal with low doping concentration can reduce absorption of pump light at the focusing end surface position on the premise of guaranteeing absorption length, thereby slowing down thermal effect and inhibiting ASE and parasitic oscillation.
Preferably, the inner wall of the cylindrical passage is machined to a rough surface. This definition causes spontaneous emission light generated inside the crystal rod to become diffused diffuse reflection light after passing through the roughened surface, thereby suppressing generation of ASE and parasitic oscillation.
In one embodiment, the output mirror uses a VRM ultra-high-si mirror with an amplification rate of 1.3-1.5 as the concave-convex unstable cavity. The high-order coefficient n of the ultra-high mirror takes mode matching as a principle to take values, so that the values of 2a and 2b of the film layer flat-top distribution are matched with the curvature radius and the central reflectivity of the resonant cavity mirror, while the ultra-high mirror suppresses the oscillation of the high-order mode to lose a part of energy, ASE and parasitic oscillation are suppressed at the same time, the negative influence of ASE on the laser energy is far greater than the energy lost after the suppression of the high-order mode, and the improvement of the laser energy output is facilitated by comprehensive consideration.
In one embodiment, the total reflection mirror is a concave mirror. This definition may concentrate weaker light to the location to be observed.
In one embodiment, the heat dissipation module comprises an LD heat sink, a TEC refrigerator, wherein the TEC refrigerator is located between the pump source and the LD heat sink.
Compared with the prior art, the invention improves the capacity of inhibiting ASE and parasitic oscillation of the high-energy pulse laser by analyzing the mechanism of ASE and parasitic oscillation generation, and provides the following improvements:
(1) The pump source selects multi-wavelength bars in the absorption spectrum range of the Nd-YAG crystal to form a wide spectrum LD array module of the pump source, so that the absorption of the front end surface of the Nd-YAG crystal to focused pump light is reduced on the premise of ensuring enough energy storage of the pulse laser at different temperatures, and the crystal heat effect is reduced.
(2) Nd in Nd-YAG crystal gain medium 3+ The ion adopts 0.1% -0.2% low doping concentration, and on the premise of guaranteeing the absorption length, the absorption of pump light at the focusing end face position can be reduced, so that the thermal effect is slowed down, and ASE and parasitic oscillation can be inhibited.
(3) The inner walls of the upper and lower crystal heat sinks are processed into rough surfaces, so that spontaneous radiation light generated in the crystal rod is changed into diffused diffuse reflection light after passing through the rough surfaces, and ASE and parasitic oscillation are restrained.
(4) The VRM ultra-high-si mirror is adopted as an concave-convex unstable cavity of the output mirror, the mode matching of the volume of the laser mode in the cavity and the pumping light spot is realized, the pumping uniformity can be improved, the overlapping factor of the effective laser gain light spot and the pumping light spot in the cross section is more approximate to 1, the effective oscillation in the cavity is increased, the influence of parasitic oscillation on the laser light spot is reduced, and the laser light spot output with high-beam quality Gaussian distribution is realized.
Drawings
FIG. 1 is a schematic diagram of a resonant cavity of one embodiment of a high-energy end pump pulse laser of the present application;
FIG. 2 is a schematic diagram of the high-energy end-pumped laser of FIG. 1;
FIG. 3 is a schematic diagram of a crystal heat sink;
fig. 4 is a schematic diagram of the positional installation between a Nd-YAG crystal and a crystal heat sink.
The figure indicates: the device comprises a 1-pumping source, a 2-radiating module, a 21-TEC refrigerator, a 22-LD radiator, a 3-focusing lens group, a 4-total reflecting mirror, a 5-Nd YAG crystal, a 6-polaroid, a 7-quarter wave plate, an 8-electro-optic Q-switching crystal, a 9-wedge lens group, a 10-output lens, an 11-upper crystal heat sink, a 12-lower crystal heat sink and a 13-cylindrical channel.
Description of the embodiments
The invention will be further described with reference to examples and drawings, to which reference is made, but which are not intended to limit the scope of the invention.
Several high-energy end-pumped laser embodiments are presented below.
As shown in fig. 1, embodiment 1 provides a high-energy end pump pulse laser, which comprises a pump source, a heat dissipation module, a focusing lens group, a total reflection mirror, an Nd: YAG crystal, a polaroid, a quarter wave plate, an electro-optic Q-switched crystal, a wedge lens group and an output lens, wherein the focusing lens group, the total reflection mirror, the Nd: YAG crystal, the polaroid, the quarter wave plate, the electro-optic Q-switched crystal, the wedge lens group and the output lens are sequentially arranged along an emission light path of the pump source. The pumping source adopts a multi-wavelength LD array module.
Generally, as shown in fig. 2, the pump source, the focusing lens group, the total reflection lens, the Nd: YAG crystal, the polaroid, the quarter wave plate, the electro-optic Q-switching crystal, the wedge lens group and the output lens are collinearly arranged on the base A, and the heat dissipation module is positioned on one side of the pump source to cool and dissipate heat.
Specifically, the heat dissipation module may have the following structure: the system comprises an LD radiator and a TEC refrigerator, wherein the TEC refrigerator is positioned between a pumping source and the LD radiator. The principle of the TEC refrigerator is to precisely control the temperature of a pumping source by utilizing the Peltier effect of a semiconductor.
In general, in order to achieve an output of 100mJ energy or more, the pulse laser having the above-described structure is required to have a pump source with a peak power of 4kW at 808nm, calculated from 10% optical efficiency, at a repetition rate of 20Hz and a pump current pulse width of 230 μs.
However, the pump light with a single wavelength of 808nm has a high absorption coefficient and obvious thermal effect, and in this embodiment, the at least two bars with different dominant wavelengths are arranged in the pump source to form the LD array module, where characteristic peaks of absorption spectrums with the dominant wavelengths of 730 nm-760 nm or 780 nm-630 nm are selected as the dominant wavelengths, preferably characteristic peaks of absorption spectrums with the dominant wavelengths of 790 nm-630 nm are selected at intervals, and the spectrum ranges of the unfolded spectrums at the temperature T are preferably continuously distributed.
The LD array module with the multi-wavelength bars can enable the pulse laser to reduce the absorption of the front end face of the Nd-YAG crystal on the focused pump light under the premise of ensuring enough energy storage at different temperatures, thereby reducing the crystal thermal effect.
In practical implementation, the LD array module selects three dominant wavelength bars, namely 796nm, 808nm and 814nm, which are arranged along the fast axis direction to form an elliptical light spot with a pumping light spot of about 15mm×10mm (fast axis×slow axis).
In one embodiment, at least 20 bars are installed, each bar having a power of 200W, such that the power of the LD array module is at least 4kW.
Specifically, each of the 796nm, 808nm and 814nm bars is selectively allocated in proportion according to the different scenes (such as low-temperature or high-temperature environments) in which the pulse laser is applied. Taking a high temperature environment as an example, since the 796nm wavelength drifts to around 808nm at a high temperature, considering that the absorption coefficient is maximum around 808nm of Nd: YAG crystal, the number of bars at the 796nm wavelength can be appropriately increased, and the numbers of bars at 808nm and 814nm wavelengths can be reduced. The opposite is true in low temperature environment, so that the pulse laser can work within the range of-40 ℃ to 60 ℃.
By reasonably designing the focusing lens group, the light spots in the fast and slow axis directions can be focused at the same position in the Nd-YAG crystal, and the size of the focused light spots is an important factor affecting ASE and parasitic oscillation in the cavity at first.
In one embodiment, a cylindrical Nd: YAG crystal with the diameter of 5mm is adopted, and focused light spots are respectively compressed by a focusing mirror and then shaped into light spots with the size of about 3-3.5 mm after the speed axes are respectively compressed by the focusing mirror.
In general, nd is considered by those skilled in the art 3+ The performance of the laser will be significantly reduced when the doping concentration is lower than 0.5%, and the applicant has found that when Nd in the Nd: YAG crystal 3+ When the doping concentration is reduced to 0.1% -0.2%, the absorption of pump light at the focusing end face position can be reduced on the premise of ensuring the absorption length, so that the thermal effect is slowed down, ASE and parasitic oscillation can be inhibited, and unexpected effects are obtained.
As shown in fig. 3 and 4, when a cylindrical crystal is used as the Nd-YAG crystal, a cylindrical channel needs to be formed between the upper crystal heat sink and the lower crystal heat sink to accommodate the rod-shaped Nd-YAG crystal, and as the effect of reflection of the side surface of the Nd-YAG crystal on ASE and parasitic oscillation is great, as a further improvement, the inner wall of the cylindrical channel (i.e., the inner wall of the upper and lower crystal heat sinks) is processed into a rough surface, which damages the reflection of spontaneous emission light, and the spontaneous emission light generated inside the Nd-YAG crystal becomes diffused diffuse reflection light after passing through the rough surface, so that the generation of ASE and parasitic oscillation can be suppressed, and the laser energy is significantly improved during the Q-switched dynamic light operation.
In another embodiment, the resonant cavity adopts an concave-convex unstable cavity design, the total reflection mirror adopts a flat concave mirror, the output mirror adopts a VRM ultra-high-si mirror with the amplification ratio of 1.3-1.5 as the concave-convex unstable cavity, the confined laser can inhibit ASE and parasitic oscillation while inhibiting high-order mode oscillation, and the mode volume is limited, but the negative influence of ASE on laser energy is far greater than the energy lost after high-order mode inhibition, and the laser energy output can be improved by optimizing the value of the high-order coefficient n of the ultra-high-si film layer and selecting the flat-top distribution value (the value corresponding to the flat-top distribution 2a and 2b in the film coating parameters) matched with the resonant cavity parameter.
The above describes in detail a high energy end pumped laser provided by the present application. The description of the specific embodiments is only intended to facilitate an understanding of the method of the present application and its core ideas. It should be noted that it would be obvious to those skilled in the art that various improvements and modifications can be made to the present application without departing from the principles of the present application, and such improvements and modifications fall within the scope of the claims of the present application.

Claims (6)

1. The high-energy end pump pulse laser is characterized by comprising a pumping source, a heat radiation module acting on the pumping source, a focusing lens group, a total reflection lens, nd: YAG crystals, a polaroid, a quarter wave plate, an electro-optical Q-switching crystal, a wedge lens group and an output lens, wherein the focusing lens group, the total reflection lens, the Nd: YAG crystals, the polaroid, the quarter wave plate, the electro-optical Q-switching crystal, the wedge lens group and the output lens are sequentially and linearly arranged along an emission light path of the pumping source;
the pumping source adopts three kinds of bars with different dominant wavelengths of 796nm, 808nm and 814nm to be arranged along the fast axis direction to form an LD array module, wherein the number of the bars with the three kinds of dominant wavelengths of 796nm, 808nm and 814nm is 4-10 respectively, and the power of the LD array module formed by the bars is at least 4kW;
the radiating module comprises an LD radiator and a TEC refrigerator, wherein the TEC refrigerator is positioned between the pumping source and the LD radiator, and the Nd-YAG crystal is a cylindrical crystal rod.
2. A high energy end pumped laser as defined in claim 1, wherein said cylindrical crystal rod is mounted between an upper crystal heat sink and a lower crystal heat sink, and wherein a cylindrical channel is formed between the upper crystal heat sink and the lower crystal heat sink for receiving the cylindrical crystal rod.
3. The high-energy end pumped laser of claim 2, wherein said Nd is Nd in a YAG crystal 3+ The doping concentration of the (C) is 0.1% -0.2%.
4. A high energy end pumped laser as defined in claim 2, wherein the inner wall of said cylindrical passage is roughened.
5. The high-energy end pump pulse laser according to claim 1, wherein the output mirror adopts a VRM ultra-high-si mirror with an amplification rate of 1.3-1.5 as the concave-convex unstable cavity.
6. The high energy end pumped laser of claim 1, wherein said total reflection mirror is a concave mirror.
CN202310339941.7A 2023-04-03 2023-04-03 High-energy end pump pulse laser Active CN116053909B (en)

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GB2357369A (en) * 1999-12-16 2001-06-20 Advanced Optical Technology Lt A solid state laser
CN105591267B (en) * 2016-03-22 2019-01-25 中国人民解放军武汉军械士官学校 A kind of multi wavelength pumping exempts from temperature control solid state laser and multi-wavelength selection method
CN113889831A (en) * 2021-05-28 2022-01-04 中国科学院理化技术研究所 Compact type strip pulse laser
CN113809630A (en) * 2021-09-13 2021-12-17 山东大学 YAG ultra-short pulse laser amplifier with side pump
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