CN116046171A - Temperature monitoring method and system for high-voltage switch equipment - Google Patents
Temperature monitoring method and system for high-voltage switch equipment Download PDFInfo
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Abstract
The invention belongs to the technical field of high-voltage switch equipment, and particularly relates to a temperature monitoring method and system for high-voltage switch equipment. The system comprises an infrared temperature sensor and a data processing unit; the infrared temperature sensor is arranged at the position of the high-voltage switch equipment, which is provided with an observation window, and is used for measuring the temperature of the internal conductor in real time through glass of the observation window to obtain the measured temperature at each moment and sending the measured temperature to the data processing unit; the data processing unit is used for converting the measured temperature at each moment into the conductor temperature at each moment. The invention uses the infrared temperature sensor to measure the temperature of the internal conductor through the glass of the observation window, and further uses the measured temperature to calculate the conductor temperature. The method can realize real-time accurate monitoring of the conductor temperature of the single high-voltage switch equipment, is little affected by the environment, has high reliability, is convenient for realizing deep secondary fusion, provides historical data auxiliary decision, and greatly reduces manpower investigation and main station data pressure.
Description
Technical Field
The invention belongs to the technical field of high-voltage switch equipment, and particularly relates to a temperature monitoring method and system for high-voltage switch equipment.
Background
In the power system, the high-voltage switch is widely applied to bus connection of a power transmission line and a power plant substation, and can not only enable a power grid to run in sections, but also isolate faults and facilitate maintenance. The high-voltage switch is easy to oxidize the moving contact and the static contact due to high temperature when running with high current in time, and easy to scatter the static contact when severe, thereby causing faults such as short circuit. Thus, monitoring the temperature of the high voltage switchgear is necessary. The current most high-voltage switch equipment adopts the temperature monitoring mode of arranging the sensor in the station, the data communication difficulty between the equipment is big, the data form is non-uniform, the fusion degree with primary equipment is lower, the influence of external environment is easy, and the omnibearing temperature monitoring and the history record from a single equipment conductor to the shell are difficult to realize, and the customization state evaluation and the fault early warning are difficult to carry out for different equipment.
Disclosure of Invention
The invention aims to provide a temperature monitoring method and a system for high-voltage switch equipment, which are used for solving the problems that in the prior art, communication data between settings is difficult and single equipment temperature monitoring is difficult to realize due to the fact that a sensor is arranged in a station for temperature monitoring.
In order to solve the technical problems, the invention provides a temperature monitoring system of high-voltage switch equipment, which comprises an infrared temperature sensor and a data processing unit; the infrared temperature sensor is arranged at the position of the high-voltage switch equipment, which is provided with an observation window, and is used for measuring the temperature of the internal conductor in real time through glass of the observation window to obtain the measured temperature at each moment and sending the measured temperature to the data processing unit; the data processing unit is used for converting the measured temperature at each moment into the conductor temperature at each moment.
The beneficial effects are as follows: according to the invention, an infrared temperature sensor is deployed at the position of the high-voltage switch equipment with the observation window, the infrared temperature sensor is utilized to measure the temperature of an internal conductor through glass of the observation window, and then the conductor temperature is obtained by calculation through the measured temperature. The method can realize real-time accurate monitoring of the conductor temperature of the single high-voltage switch equipment, is little affected by the environment, has high reliability, is convenient for realizing deep secondary fusion, provides historical data auxiliary decision, and greatly reduces manpower investigation and main station data pressure. In addition, the data of the data detected by the infrared temperature sensor can be displayed through the image, so that the temperature data can be displayed more intuitively.
Further, the conversion method adopted by the data processing unit is as follows: multiplying the measured temperature by the absorptivity to obtain a conductor temperature, the absorptivity being:
β＝(1－τ 1 +τ 2 +τ 3 p－τ 4 l 2 －τ 5 lp－τ 6 p 2 ) 1/4
wherein τ 1 ～τ 6 For temperature compensation coefficient, p is the SF of high-voltage switch air chamber 6 The pressure value, l, is the infrared viewing window to conductor distance.
The beneficial effects are as follows: using high-voltage switching chambers SF 6 The absorption rate can be accurately calculated by the pressure value and the distance from the infrared observation window to the conductor, and the conductor temperature can be accurately calculated by the absorption rate.
Further, the high-voltage switch observation window is made of glass with infrared light transmittance being larger than a certain degree.
The beneficial effects are as follows: the glass with high infrared light transmittance is selected, so that the detection accuracy of the infrared sensor can be improved.
The high-voltage switch equipment is characterized by further comprising a temperature measurement terminal and a plurality of probes, wherein the probes are arranged at positions of the high-voltage switch equipment, which are not provided with observation windows, and are used for measuring the temperature of each part of the shell and the ambient temperature in real time, sending the temperature measurement terminal to the data processing unit; the data processing unit is also used for inputting the current time temperature sent by the temperature measuring terminal into the constructed conductor temperature prediction model to obtain the conductor temperature at the current time; the conductor temperature prediction model is trained by using the temperatures of all parts of the historical shell, the historical environment temperature and the corresponding historical conductor temperature as training data.
The beneficial effects are as follows: the conductor temperature is considered to influence the environment temperature and the high-voltage switch shell temperature, so that the conductor temperature is deduced by utilizing the temperatures of all parts of the shell and the environment temperature, and a conductor temperature prediction model is obtained by training historical data, so that conductor temperature prediction can be accurately carried out.
Further, the plurality of probes are used for measuring temperatures of at least two parts of the side face of the shell, the top of the shell and the bottom of the shell.
The beneficial effects are as follows: the conductor temperature can be predicted by using the temperatures of a plurality of parts of the housing, so that the conductor temperature prediction accuracy can be improved.
Further, the data processing unit comprises a main control board, a serial port board, an optical port board and a power board; the main control board performs data interaction with the temperature measuring terminal through the serial port board, and performs data interaction with the infrared temperature sensor through the optical port board; the power panel is used for supplying power to the data processing unit.
In order to solve the technical problems, the invention also provides a temperature monitoring method of the high-voltage switch equipment, wherein an infrared sensor is deployed at the position of the high-voltage switch equipment with an observation window, and the temperature of an internal conductor is measured in real time by utilizing the infrared temperature sensor through glass of the observation window to obtain the measured temperature at each moment; the measured temperatures at the respective times are converted into conductor temperatures at the respective times.
The beneficial effects are as follows: according to the invention, an infrared temperature sensor is deployed at the position of the high-voltage switch equipment with the observation window, the infrared temperature sensor is utilized to measure the temperature of an internal conductor through glass of the observation window, and then the conductor temperature is obtained by calculation through the measured temperature. The method can realize real-time accurate monitoring of the conductor temperature of the single high-voltage switch equipment, is little affected by the environment, has high reliability, is convenient for realizing deep secondary fusion, provides historical data auxiliary decision, and greatly reduces manpower investigation and main station data pressure. In addition, the data of the data detected by the infrared temperature sensor can be displayed through the image, so that the temperature data can be displayed more intuitively.
Further, the adopted conversion method is as follows: multiplying the measured temperature by the absorptivity to obtain a conductor temperature, the absorptivity being:
β＝(1－τ 1 +τ 2 +τ 3 p－τ 4 l 2 －τ 5 lp－τ 6 p 2 ) 1/4
wherein τ 1 ～τ 6 For temperature compensation coefficient, p is the SF of high-voltage switch air chamber 6 The pressure value, l isInfrared viewing window to conductor distance.
The beneficial effects are as follows: using high-voltage switching chambers SF 6 The absorption rate can be accurately calculated by the pressure value and the distance from the infrared observation window to the conductor, and the conductor temperature can be accurately calculated by the absorption rate.
Further, a probe and a temperature measuring terminal are deployed at the position of the high-voltage switch equipment without an observation window, the temperature of each part of the shell and the ambient temperature are obtained by the probe and the temperature measuring terminal, and the obtained temperature is input into a constructed conductor temperature prediction model to obtain the internal conductor temperature; the conductor temperature prediction model is trained by using the temperatures of all parts of the historical shell, the historical environment temperature and the corresponding historical conductor temperature as training data.
The beneficial effects are as follows: the conductor temperature is considered to influence the environment temperature and the high-voltage switch shell temperature, so that the conductor temperature is deduced by utilizing the temperatures of all parts of the shell and the environment temperature, and a conductor temperature prediction model is obtained by training historical data, so that conductor temperature prediction can be accurately carried out.
Further, the temperature of each portion includes measuring the temperature of at least two portions of the side surface of the housing, the top of the housing, and the bottom of the housing.
The beneficial effects are as follows: the conductor temperature can be predicted by using the temperatures of a plurality of parts of the housing, so that the conductor temperature prediction accuracy can be improved.
Drawings
FIG. 1 is a schematic block diagram of a high voltage switchgear temperature monitoring system of the present invention;
FIG. 2 is a schematic diagram of a BP neural network used in the present invention;
fig. 3 is a graph of the relationship between infrared band and absorbance.
Detailed Description
The invention adopts different temperature monitoring modes aiming at different high-voltage switch equipment so as to realize accurate monitoring of the temperature of the internal conductor of the high-voltage switch. The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent.
System embodiment:
the invention discloses a temperature monitoring system of high-voltage switch equipment, which is shown in figure 1 and comprises a lumped data processing unit and a temperature monitoring module. The lumped data processing unit is arranged in the intelligent component cabinet of the high-voltage switch equipment and comprises 1 main control board, 2 optical port boards, 2 serial port boards and 1 power panel, and supports 8 pairs of optical ports and 32 paths of serial ports. The system comprises a main control board, a digital twin platform, a digital control device and a digital control device, wherein a Linux operating system is arranged in the main control board, supports external display transposition or remote connection for human-computer interaction, comprises 1 serial port, 1 USB port, 2 optical ports and a wireless transmission module, and communicates with the substation control device/digital twin platform through MMS protocol. The main control board is internally provided with a temperature monitoring analysis algorithm, so that the abnormal temperature rise point positioning of the equipment and more accurate omnibearing temperature state monitoring evaluation can be realized, the on-site storage of historical data is supported, and the processing result is uploaded to a station control layer device (server). The power panel mainly provides power for a circuit module in the device, the power panel is wide in power input, supports DC220V/AC220V and outputs 24V power.
Different temperature monitoring modules are arranged at different positions of the high-voltage switch equipment, and correspondingly adopted temperature monitoring methods are different. Distributed optical fiber temperature measuring points can be arranged at key positions of shells such as GIS buses and circuit breakers. The optical fiber temperature measurement terminal is connected with the optical fiber probe and is communicated with the serial port board of the lumped data processing unit through RS485, the temperature of the shell is collected, and the real-time temperature of the shell of the equipment is uploaded to the lumped data processing unit. The optical fiber temperature measuring terminal supports at most 12 optical fiber temperature measuring probes and at most 6 infrared temperature sensors. The infrared temperature sensor is arranged at a position suitable for placing an observation window, such as a disconnecting switch, a grounding switch and the like, and the surface temperature of the contact/conductor can be directly observed through special infrared glass.
When the optical fiber temperature measuring point is installed, a proper deployment position can be selected according to different shell structures and installation spaces. The selectable positions are the top and bottom of the shell, the position of +/-40 degrees of the side surface of the shell and the position of 0 degrees of the side surface of the shell, and an optical fiber probe is additionally installed to a position which is 1m-1.5m away from the radial direction of the conductor for measuring the ambient temperature. The lumped data processing unit is internally provided with an artificial neural network algorithm based on a GIS temperature field effect physical simulation model, can decouple temperature data in an optical signal, and fits internal conductor temperature by measuring the position temperature of a shell to form a temperature curve and a history record. Specific: the artificial neural network algorithm can adopt a BP neural network, specifically as shown in fig. 2, trains the BP neural network by using the temperatures of all parts of a historical shell, the historical environment temperature and the corresponding historical conductor temperature as training data to obtain a conductor temperature prediction model, further obtains the temperatures of all parts of the shell of the high-voltage switch equipment and the environment temperature, and inputs the temperatures and the environment temperature into the constructed conductor temperature prediction model to obtain the internal conductor temperature.
Before the infrared sensor is installed, the observation window is required to be modified to be made of glass with high infrared transmittance, germanium glass is used as the optimal choice, and the relation between a specific infrared band and the absorption rate is shown in fig. 3. The lumped data processing unit is internally provided with an infrared compensation algorithm, and the conductor temperature can be obtained by carrying out compensation calculation on temperature distribution image data captured by an infrared probe.
Conductor temperature t=measurement temperature t×absorptivity β
Absorption rate β= (1- τ) 1 +τ 2 +τ 3 p－τ 4 l 2 －τ 5 lp－τ 6 p 2 ) 1/4
Wherein τ * And (1-6) is a temperature compensation coefficient; p is the SF6 pressure value of the isolating switch air chamber; l is the infrared viewing window to inner conductor (e.g., contact) distance.
The main control board can realize the positioning of the abnormal temperature rise point of the equipment and the more accurate monitoring and evaluation of the omnibearing temperature state by using the method, support the on-site storage of the historical data and upload the processing result to the station control layer device (server).
In summary, the invention combines infrared and optical fiber temperature measurement modes, realizes the temperature monitoring of key parts of the high-voltage switch equipment, is highly integrated with primary equipment, develops a lumped data processing unit, realizes the omnibearing temperature monitoring and data fusion, has little influence by environment, has high reliability, realizes deep secondary fusion, provides historical data auxiliary decision, supports digital twin, greatly reduces manpower investigation and master station data pressure, realizes the omnibearing monitoring and fault positioning of the temperature state of the high-voltage switch equipment, and greatly improves the intelligent level of the high-voltage switch equipment.
Method embodiment:
the invention relates to a temperature monitoring method of high-voltage switch equipment, which comprises the following specific means:
an infrared sensor is deployed at the position of the high-voltage switch equipment with an observation window, and the temperature of an internal conductor is measured in real time by utilizing the glass of the observation window through the infrared temperature sensor, so as to obtain the measured temperature at each moment; the measured temperature at each time is converted to a conductor temperature at each time using the following formula: conductor temperature t=measurement temperature t×absorptivity β, absorptivity β= (1- τ) 1 +τ 2 +τ 3 p－τ 4 l 2 －τ 5 lp－τ 6 p 2 ) 1/4 ，τ * And (1-6) is a temperature compensation coefficient; p is the SF6 pressure value of the isolating switch air chamber; l is the infrared viewing window to inner conductor distance.
A probe and a temperature measuring terminal are deployed at the position of the high-voltage switch equipment, which is not provided with an observation window, the temperature of each part of the shell and the ambient temperature are obtained by the probe and the temperature measuring terminal, and the obtained temperature is input into a constructed conductor temperature prediction model to obtain the internal conductor temperature; the conductor temperature prediction model can be obtained by selecting a BP neural network model and training by using the temperatures of all parts of a historical shell, the historical environment temperature and the corresponding historical conductor temperature as training data.
Claims (10)
1. The high-voltage switch equipment temperature monitoring system is characterized by comprising an infrared temperature sensor and a data processing unit; the infrared temperature sensor is arranged at the position of the high-voltage switch equipment, which is provided with an observation window, and is used for measuring the temperature of the internal conductor in real time through glass of the observation window to obtain the measured temperature at each moment and sending the measured temperature to the data processing unit; the data processing unit is used for converting the measured temperature at each moment into the conductor temperature at each moment.
2. The high voltage switchgear temperature monitoring system according to claim 1, wherein the data processing unit employs a scaling method of: multiplying the measured temperature by the absorptivity to obtain a conductor temperature, the absorptivity being:
β＝(1－τ 1 +τ 2 +τ 3 p－τ 4 l 2 －τ 5 lp－τ 6 p 2 ) 1/4
wherein τ 1 ～τ 6 For temperature compensation coefficient, p is the SF of high-voltage switch air chamber 6 The pressure value, l, is the infrared viewing window to conductor distance.
3. The system according to claim 1 or 2, wherein the high-voltage switch observation window is made of glass with infrared transmittance greater than a certain degree.
4. The high-voltage switch equipment temperature monitoring system according to claim 1, further comprising a temperature measuring terminal and a plurality of probes, wherein the probes are arranged at positions of the high-voltage switch equipment without an observation window and are used for measuring the temperature of each part of the shell and the ambient temperature in real time, and the temperatures are sent to the temperature measuring terminal and are sent to the data processing unit by the temperature measuring terminal;
the data processing unit is also used for inputting the current time temperature sent by the temperature measuring terminal into the constructed conductor temperature prediction model to obtain the conductor temperature at the current time; the conductor temperature prediction model is trained by using the temperatures of all parts of the historical shell, the historical environment temperature and the corresponding historical conductor temperature as training data.
5. The high voltage switchgear temperature monitoring system of claim 4 wherein the plurality of probes are configured to measure temperatures at least two locations in the side of the enclosure, the top of the enclosure, and the bottom of the enclosure.
6. The high voltage switchgear temperature monitoring system of claim 4, wherein the data processing unit comprises a main control board, a serial port board, an optical port board, and a power board; the main control board performs data interaction with the temperature measuring terminal through the serial port board, and performs data interaction with the infrared temperature sensor through the optical port board; the power panel is used for supplying power to the data processing unit.
7. The temperature monitoring method of the high-voltage switch equipment is characterized in that an infrared sensor is deployed at the position of the high-voltage switch equipment with an observation window, and the temperature of an internal conductor is measured in real time by utilizing the infrared temperature sensor through glass of the observation window to obtain the measured temperature at each moment; the measured temperatures at the respective times are converted into conductor temperatures at the respective times.
8. The method for monitoring the temperature of high-voltage switchgear according to claim 7, characterized in that the conversion method used is: multiplying the measured temperature by the absorptivity to obtain a conductor temperature, the absorptivity being:
β＝(1－τ 1 +τ 2 +τ 3 p－τ 4 l 2 －τ 5 lp－τ 6 p 2 ) 1/4
wherein τ 1 ～τ 6 For temperature compensation coefficient, p is the SF of high-voltage switch air chamber 6 The pressure value, l, is the infrared viewing window to conductor distance.
9. The method for monitoring the temperature of the high-voltage switch equipment according to claim 7, wherein a probe and a temperature measuring terminal are deployed at a position of the high-voltage switch equipment, which is not provided with an observation window, the temperature of each part of the shell and the ambient temperature are obtained by the probe and the temperature measuring terminal, and the obtained temperature is input into a constructed conductor temperature prediction model to obtain the internal conductor temperature; the conductor temperature prediction model is trained by using the temperatures of all parts of the historical shell, the historical environment temperature and the corresponding historical conductor temperature as training data.
10. The method of claim 9, wherein measuring the temperature at each location includes measuring the temperature at least two locations of the housing side angles, the housing top, and the housing bottom.
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| CN202211628372.XA CN116046171A (en) | 2022-12-17 | 2022-12-17 | Temperature monitoring method and system for high-voltage switch equipment |
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| CN118067350A (en) * | 2024-04-16 | 2024-05-24 | 中国空气动力研究与发展中心计算空气动力研究所 | Wind tunnel experiment bin |
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| CN118067350A (en) * | 2024-04-16 | 2024-05-24 | 中国空气动力研究与发展中心计算空气动力研究所 | Wind tunnel experiment bin |
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