CN116043195A - Heating device and ALD equipment - Google Patents

Heating device and ALD equipment Download PDF

Info

Publication number
CN116043195A
CN116043195A CN202310189792.0A CN202310189792A CN116043195A CN 116043195 A CN116043195 A CN 116043195A CN 202310189792 A CN202310189792 A CN 202310189792A CN 116043195 A CN116043195 A CN 116043195A
Authority
CN
China
Prior art keywords
heating
reflecting
reaction chamber
heating element
fixing plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310189792.0A
Other languages
Chinese (zh)
Inventor
万军
兰丽丽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Materials Technology and Engineering Inc
Original Assignee
Advanced Materials Technology and Engineering Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Materials Technology and Engineering Inc filed Critical Advanced Materials Technology and Engineering Inc
Priority to CN202310189792.0A priority Critical patent/CN116043195A/en
Publication of CN116043195A publication Critical patent/CN116043195A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The embodiment of the invention provides a heating device and ALD equipment, and relates to the technical field of coating. The heating device comprises a containing container, a reaction cavity and a heating component. The reaction chamber sets up in the holding container, and the reaction chamber is used for the coating film, and heating element sets up in the holding container to around in all surfaces of reaction chamber, in order to carry out the homogeneous heating to the whole of reaction chamber, improve heating efficiency, thereby promote coating film efficiency and coating film quality.

Description

Heating device and ALD equipment
Technical Field
The invention relates to the technical field of semiconductors, in particular to a heating device and ALD equipment.
Background
Atomic layer deposition is a coating method developed on the basis of chemical vapor deposition, and is a method capable of coating substances on the surface of a substrate layer by layer in a single atomic film mode. Atomic layer deposition is similar to common chemical deposition. However, during atomic layer deposition, the chemical reaction of a new atomic layer is directly related to the previous layer in such a way that only one atomic layer is deposited per reaction.
In the process of atomic layer deposition, atomic layer deposition must be performed at a certain temperature. Therefore, the reaction cavity in the ALD film plating equipment needs to be heated, so that the temperature of the reaction cavity reaches the temperature requirement of atomic layer deposition, atoms of a layer can be deposited on the substrate, and the atomic layer meets a certain thickness requirement.
The heating equipment in the existing ALD equipment generally causes uneven temperature in the reaction chamber, thereby reducing coating efficiency and coating quality.
Disclosure of Invention
The invention provides a heating device and ALD equipment, which can heat a reaction cavity integrally and uniformly.
Embodiments of the invention may be implemented as follows:
in a first aspect, the present invention provides a heating apparatus comprising a receiving container, a reaction chamber, and a heating assembly;
the reaction cavity is arranged in the accommodating container and is used for coating, and the heating component is arranged in the accommodating container and surrounds all the outer surfaces of the reaction cavity so as to heat the reaction cavity.
In an alternative embodiment, the heating assembly includes:
a first heating assembly located at the top of the reaction chamber;
a second heating element located at a side peripheral portion of the reaction chamber; and;
a third heating component positioned at the bottom of the reaction cavity;
the first heating component, the second heating component and the third heating component cover all outer surfaces of the reaction cavity so as to heat all the peripheries of all the outer surfaces of the reaction cavity.
In an alternative embodiment, the first heating assembly comprises a first reflecting mechanism and a first heating element, the second heating assembly comprises a second reflecting mechanism and a second heating element, and the third heating assembly comprises a third reflecting mechanism and a third heating element;
the first heating element, the second heating element and the third heating element are all arranged outside the reaction cavity at intervals, the first heating element is arranged at intervals on the first reflecting mechanism, and the first reflecting mechanism is used for reflecting heat emitted by the first heating element;
the second heating parts are arranged at intervals on the second reflecting mechanism, and the second reflecting mechanism is used for reflecting heat emitted by the second heating parts;
the third heating parts are arranged at intervals on the third reflecting mechanism, and the third reflecting mechanism is used for reflecting heat emitted by the third heating parts.
In an alternative embodiment, the first reflecting mechanism and the third reflecting mechanism are both plate-shaped, and the first heating element is arranged between the reaction cavity and the first reflecting mechanism and is wound around the first reflecting mechanism;
the third heating piece is arranged between the reaction cavity and the third reflecting mechanism and is wound on the third reflecting mechanism.
In an alternative embodiment, the first reflection mechanism is provided with a first guiding-out hole, the third reflection mechanism is provided with a second guiding-out hole, the first guiding-out hole is used for the first heating element to penetrate out, and the second guiding-out hole is used for the third heating element to penetrate out.
In an alternative embodiment, the second reflecting mechanism is cylindrical, and the second heating element is disposed between the reaction chamber and the second reflecting mechanism and is wound around an inner wall of the second reflecting mechanism.
In an alternative embodiment, the first reflecting mechanism includes a first fixing plate and a plurality of first reflecting plates, the first fixing plate is fixedly connected with the top of the reaction chamber, and the plurality of first reflecting plates are all arranged in parallel on one side of the first fixing plate far away from the reaction chamber;
the second reflecting mechanism comprises two second fixing plates and a plurality of second reflecting plates, the two second fixing plates are fixedly connected with the bottom of the accommodating container, and the plurality of second reflecting plates are arranged between the two fixing plates in parallel;
the third reflection mechanism comprises a third fixing plate and a plurality of third reflection plates, wherein the third fixing plate is fixedly connected with the bottom of the accommodating container, and the third reflection plates are arranged on one side, away from the reaction cavity, of the third fixing plate in parallel.
In an alternative embodiment, the first fixing plate and the first reflecting plate are both provided with first through holes, and the first reflecting plate is fixed on the first fixing plate through bolts;
the second fixing plate and the second reflecting plate are respectively provided with a second through hole, and the second reflecting plate is fixed on the second fixing plate through bolts;
the third fixing plate and the third reflecting plate are respectively provided with a third through hole, and the third reflecting plate is fixed on the third fixing plate through bolts.
In an alternative embodiment, the first heating element, the second heating element and the third heating element are heating tubes.
In a second aspect, the present invention provides an ALD apparatus comprising a heating device according to any one of the preceding embodiments.
The heating device and the ALD equipment provided by the embodiment of the invention have the beneficial effects that: the heating component is arranged in the accommodating container and surrounds the periphery of the reaction cavity, so that the whole reaction cavity is uniformly heated, the heating efficiency is improved, and the coating efficiency and the coating quality are improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of an ALD apparatus according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a heating device according to an embodiment of the present invention;
FIG. 3 is a schematic view of a heating assembly according to an embodiment of the present invention;
FIG. 4 is a schematic view of a first heating assembly according to an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of a first heating assembly according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a second heating assembly according to an embodiment of the present invention;
FIG. 7 is a schematic cross-sectional view of a second heating assembly according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a third heating assembly according to an embodiment of the present invention;
fig. 9 is a schematic cross-sectional view of a third heating assembly according to an embodiment of the present invention.
Icon: a 10-ALD apparatus; 11-heating means; 100-accommodating containers; 200-reaction chamber; 300-a heating assembly; 310-a first heating assembly; 311-a first reflective mechanism; 3111-a first securing plate; 3112-a first reflective plate; 3113-a first lead-out hole; 3114-first through-holes; 312-a first heating element; 320-a second heating assembly; 321-a second reflective mechanism; 3211-a second securing plate; 3212-a second reflecting plate; 3213-a second via; 322-a second heating element; 330-a third heating assembly; 331-a third reflection mechanism; 3311—a third fixing plate; 3312—a third reflective plate; 3313-a second lead-out hole; 3314-third through hole; 332-third heating element.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
Referring to fig. 1-2, an ALD apparatus 10 for atomic layer deposition coating a wafer is provided.
The ALD apparatus 10 includes a heating device 11, the heating device 11 including a receiving container 100, a reaction chamber 200, and a heating assembly 300. The reaction chamber 200 is disposed in the container 100, the reaction chamber 200 is used for performing atomic layer deposition coating on a wafer, and the heating assembly 300 is disposed in the container 100 and surrounds all the outer surfaces of the reaction chamber 200 to heat the reaction chamber 200.
In this embodiment, the accommodating container 100 and the reaction chamber 200 are both closed containers, the heating assembly 300 is disposed inside the accommodating container 100, and the reaction chamber 200 is disposed inside the heating assembly 300. The heating assembly 300 surrounds the periphery of the reaction chamber 200 to uniformly heat the periphery of the reaction chamber 200, thereby ensuring heating efficiency and enabling coating to be smoothly performed.
It should be noted that, in the reaction process, the internal space of the accommodating container 100 is generally vacuumized, so that the heating assembly 300 can better heat the reaction chamber 200, and meanwhile, the heating assembly 300 is prevented from emitting heat to leak as much as possible, so that the heat emitted by the heating assembly 300 can be fully utilized, and the heating efficiency of the heating assembly 300 is improved.
Referring to fig. 3, the heating assembly 300 includes a first heating assembly 310, a second heating assembly 320 and a third heating assembly 330 sequentially connected, wherein the first heating assembly 310, the second heating assembly 320 and the third heating assembly 330 are respectively disposed at the top, the side periphery and the bottom of the reaction chamber 200 to cover all the outer surfaces of the reaction chamber 200 for heating all the outer surfaces of the reaction chamber 200.
In the present embodiment, the first heating assembly 310 is disposed at the top of the reaction chamber 200 to heat the top of the reaction chamber 200; the second heating assembly 320 is disposed at a side circumferential portion of the reaction chamber 200 to heat the side circumferential portion of the reaction chamber 200; the third heating assembly 330 is disposed at the bottom of the reaction chamber 200 to heat the bottom of the reaction chamber 200, thereby completely covering the heating assembly 300 on all the outer surfaces of the reaction chamber 200, and making the heat emitted by the heating assembly fully act on the whole reaction chamber 200, ensuring that the reaction chamber 200 is heated uniformly, and further improving the coating efficiency.
Specifically, the first heating element 310 is spaced from the top of the reaction chamber 200 and the top wall of the receiving container 100, the second heating element 320 is spaced from the side circumferential portion of the reaction chamber 200 and the inner wall of the receiving container 100, and the third heating element 330 is spaced from the bottom of the reaction chamber 200 and the bottom wall of the receiving container 100, so as to further improve the reflection efficiency.
It should be noted that the first heating assembly 310 is disposed on a chamber cover (not shown) of the reaction chamber 200, and the chamber cover is detachably disposed on the top of the reaction chamber 200. The first heating assembly 310 heats the top of the reaction chamber 200 only in the case that the chamber cover is provided at the top of the reaction chamber 200.
Referring to fig. 4 and 5, the first heating assembly 310 includes a first reflecting mechanism 311 and a first heating element 312, and the first reflecting mechanism 311 is configured to reflect heat emitted by the first heating element 312.
In this embodiment, the top of the reaction chamber 200 is heated by the first heating element 312, and meanwhile, the heat emitted by the first heating element 312 is reflected by the first reflection mechanism 311, so that the full utilization of heat is ensured, the reaction chamber 200 is heated more uniformly, the outward emission of heat can be reduced, and the situation that the temperature of the accommodating container 100 is too high and the cooling or heat dissipation equipment is required to cool and dissipate heat is avoided, so that the production cost is reduced.
Further, the first heating members 312 are spaced apart from the reaction chamber 200.
In this embodiment, the first heating elements 312 are disposed outside the chamber cover at the top of the reaction chamber 200 at intervals, so that the heating source can be fully covered on the top of the reaction chamber 200, and the first heating elements 312 are not in direct contact with the reaction chamber 200, so that more uniform heating can be ensured, and the heating efficiency is improved.
Further, the first heating elements 312 are disposed at intervals on the first reflection mechanism 311.
In the embodiment, the first heating elements 312 are fixed and arranged at intervals on the first reflecting mechanism 311, that is, a gap is formed between the first heating elements 312 and the first reflecting mechanism 311, so that heat emitted by the first heating elements 312 is prevented from being directly transferred to the first reflecting mechanism 311, and the efficiency of reflecting heat by the first reflecting mechanism 311 is improved.
Further, the first reflecting mechanism 311 includes a first fixing plate 3111 and a plurality of first reflecting plates 3112, the first fixing plate 3111 is fixedly connected to the top of the reaction chamber 200, and the plurality of first reflecting plates 3112 are disposed in parallel on a side of the first fixing plate 3111 away from the reaction chamber 200.
In this embodiment, the first fixing plates 3111 are fixedly and intermittently disposed at the top of the reaction chamber 200, and the first fixing plates 3111 and the plurality of first reflecting plates 3112 are all intermittently disposed to reduce heat transfer, so as to ensure that the heat of the first heating element 312 is sufficiently applied to the top of the reaction chamber 200.
Further, the first reflection mechanism 311 is plate-shaped, and the first heating element 312 is disposed between the reaction chamber 200 and the first reflection mechanism 311 and wound around the first reflection mechanism 311.
In the present embodiment, the first fixing plate 3111 and the first reflecting plate 3112 in the first reflecting mechanism 311 are circular flat plate-shaped and cover the top of the reaction chamber 200. The first reflection plates 3112 and the first heating elements 312 are disposed on opposite sides of the first fixing plate 3111, wherein the first reflection plates 3112 are disposed on a side far from the reaction chamber 200, the first heating elements 312 are disposed on a side near to the reaction chamber 200, and the first reflection plates 3112, the first fixing plate 3111 and the first heating elements 312 are disposed at intervals to improve reflection efficiency and heating efficiency.
Further, the first reflection mechanism 311 is provided with a first guiding hole 3113, and the first guiding hole 3113 is configured for the first heating element 312 to pass through.
In this embodiment, one end of the first heating member 312 is coiled from the center of the first fixed plate 3111 to be spirally coiled to ensure uniform heat generation. The other end of the first heating member 312 is wound to the first discharging hole 3113 and is penetrated out of the first discharging hole 3113, thereby achieving uniform heating of the top of the reaction chamber 200 by the first heating member 312.
Further, first through holes 3114 are opened in each of the first fixing plate 3111 and the first reflecting plate 3112, and the first reflecting plate 3112 is fixed to the first fixing plate 3111 by bolts.
In the present embodiment, bolts sequentially pass through the plurality of first reflection plates 3112 and the first fixing plates 3111 so that the plurality of first reflection plates 3112 and the first fixing plates 3111 disposed at intervals remain relatively fixed.
Referring to fig. 6 and 7, the second heating assembly 320 includes a second reflecting mechanism 321 and a second heating element 322, and the second reflecting mechanism 321 is configured to reflect heat emitted by the second heating element 322.
In this embodiment, the second heating element 322 heats the side periphery of the reaction chamber 200, and simultaneously, the second reflecting mechanism 321 reflects the heat emitted by the second heating element 322, so as to ensure that the heat is fully utilized, so that the reaction chamber 200 is heated more uniformly, and the heat emitted outwards can be reduced, thereby avoiding the excessive temperature of the accommodating container 100 and the need of cooling or heat dissipation by cooling equipment, and further reducing the production cost.
Further, the second heating elements 322 are spaced apart from the reaction chamber 200.
In this embodiment, the second heating elements 322 are disposed in the reaction chamber 200 at intervals, so that the heating source can fully cover the side periphery of the reaction chamber 200, and the second heating elements 322 are not in direct contact with the reaction chamber 200, so that more uniform heating can be ensured, and the heating efficiency is improved.
Further, the second heating elements 322 are disposed at intervals on the second reflecting mechanism 321.
In the embodiment, the second heating element 322 is fixed to the second reflecting mechanism 321 at intervals, that is, a gap is formed between the second heating element 322 and the second reflecting mechanism 321, so that heat emitted by the second heating element 322 is prevented from being directly transferred to the second reflecting mechanism 321, and therefore, the efficiency of reflecting heat by the second reflecting mechanism 321 is improved.
Further, the second reflecting mechanism 321 includes two second fixing plates 3211 and a plurality of second reflecting plates 3212, the two second fixing plates 3211 are fixedly connected to the bottom of the accommodating container 100, and the plurality of second reflecting plates 3212 are disposed between the two fixing plates in parallel.
In the present embodiment, one end of the second fixing plate 3211 is fixedly connected to the bottom wall of the receiving container 100, and the other end is connected to the first fixing plate 3111 of the first reflection mechanism 311. The second fixing plate 3211 surrounds a side circumference of the reaction chamber 200 to heat the side circumference of the reaction chamber 200 by the second heating member 322.
Further, the second reflecting mechanism 321 is cylindrical, and the second heating element 322 is disposed between the reaction chamber 200 and the second reflecting mechanism 321 and is wound around an inner wall of the second reflecting mechanism 321.
In the present embodiment, the second fixing plate 3211 and the second reflecting plate 3212 in the second reflecting mechanism 321 are both cylindrical, and the second reflecting mechanism 321 may be connected to the first reflecting mechanism 311 in a matching manner. The plurality of second reflecting plates 3212 are arranged between the two fixed plates at intervals, the plurality of second reflecting plates 3212 are not attached to each other, and heat reflection efficiency is improved. The second heating member 322 is disposed near the inner wall of the second fixing plate 3211 of the reaction chamber 200, and the second heating member 322 is wound in a spring shape to uniformly heat the side circumferential portion of the reaction chamber 200, thereby improving heating efficiency.
Further, the second fixing plate 3211 and the second reflecting plate 3212 are provided with second through holes 3213, and the second reflecting plate 3212 is fixed to the second fixing plate 3211 by bolts.
In the present embodiment, bolts sequentially pass through the plurality of second reflecting plates 3212 and the second fixing plates 3211 so that the plurality of second reflecting plates 3212 and the second fixing plates 3211 disposed at intervals remain relatively fixed.
Referring to fig. 8 and 9, the third heating assembly 330 includes a third reflecting mechanism 331 and a third heating member 332, and the third reflecting mechanism 331 is used for reflecting heat emitted from the third heating member 332.
In this embodiment, the bottom of the reaction chamber 200 is heated by the third heating element 332, and meanwhile, the heat emitted by the third heating element 332 is reflected by the third reflecting mechanism 331, so that the full utilization of heat is ensured, the reaction chamber 200 is heated more uniformly, the outward emission of heat can be reduced, and the situation that the temperature of the accommodating container 100 is too high and the cooling or heat dissipation equipment is required to cool and dissipate heat is avoided, so that the production cost is reduced.
Further, the third heating elements 332 are disposed at intervals outside the reaction chamber 200.
In this embodiment, the third heating elements 332 are disposed in the reaction chamber 200 at intervals, so that the heating source can fully cover the bottom of the reaction chamber 200, and the third heating elements 332 are not in direct contact with the reaction chamber 200, so that more uniform heating can be ensured, and the heating efficiency is improved.
Further, the third heating elements 332 are disposed at intervals on the third reflecting mechanism 331.
In the present embodiment, the third heating element 332 is fixed and disposed in the third reflecting mechanism 331 at intervals, that is, a gap is formed between the third heating element 332 and the third reflecting mechanism 331, so that the heat emitted by the third heating element 332 is prevented from being directly transferred to the third reflecting mechanism 331, and the efficiency of the third reflecting mechanism 331 for reflecting the heat is improved.
Further, the third reflecting mechanism 331 includes a third fixing plate 3311 and a plurality of third reflecting plates 3312, wherein the third fixing plate 3311 is fixedly connected to the bottom of the accommodating container 100, and the plurality of third reflecting plates 3312 are disposed in parallel on a side of the third fixing plate 3311 away from the reaction chamber 200.
In the present embodiment, the third reflecting mechanism 331 is disposed between the bottom wall of the reaction chamber 200 and the bottom wall of the accommodating container 100, the plurality of third reflecting plates 3312 and the third heating elements 332 are disposed on two opposite sides of the third fixing plate 3311, wherein the plurality of third reflecting plates 3312 are disposed on one side far from the reaction chamber 200, the third heating elements 332 are disposed on one side close to the reaction chamber 200, and the bottom wall of the accommodating container 100, the third reflecting plates 3312, the third fixing plate 3311, the third heating elements 332 and the bottom wall of the reaction chamber 200 are all disposed at intervals to improve the reflection efficiency and the heating efficiency.
Further, the third reflecting mechanism 331 has a plate shape, and the third heating element 332 is disposed between the reaction chamber 200 and the third reflecting mechanism 331 and is wound around the third reflecting mechanism 331.
In this embodiment, the third fixing plate 3311 of the third reflecting mechanism 331 is in a shape of a flat plate with a waist, the third fixing plate 3311 is adapted to the shape of the bottom wall of the reaction chamber 200 and covers the lower portion of the bottom wall of the reaction chamber 200, and the shape of the third reflecting plate 3312 is identical to the shape of the first reflecting plate 3112. The third heating member 332 is wound around a side of the third fixing plate 3311 near the reaction chamber 200 to uniformly heat the bottom wall of the reaction chamber 200.
Further, the third reflecting mechanism 331 is provided with a second guiding hole 3313, and the third heating element 332 penetrates through the second guiding hole 3313.
In this embodiment, one end of the third heating element 332 is coiled from the central portion of the third fixing plate 3311, the coiled shape is uniformly distributed as shown in fig. 8, and the other end of the third heating element 332 is coiled to the second guiding-out hole 3313 and penetrates out from the second guiding-out hole 3313, thereby realizing uniform heating of the bottom wall of the reaction chamber 200 by the third heating element 332.
Further, the third fixing plate 3311 and the third reflecting plate 3312 are each provided with a third through hole 3314, and the third reflecting plate 3312 is fixed to the third fixing plate 3311 by bolts.
In the present embodiment, bolts sequentially pass through the plurality of third reflective plates 3312 and the third fixing plate 3311 so that the plurality of third reflective plates 3312 and the third fixing plate 3311 arranged at intervals remain relatively fixed.
Referring to fig. 4 to 9 in combination, in practical applications, the number of the first reflection plates 3112, the second reflection plates 3212 and the third reflection plates 3312 may be set to be more than 10, and under the setting condition, when the temperature of the reaction chamber 200 reaches 200 ℃, the outer wall of the accommodating container 100 only reaches 40 ℃; when the temperature of the reaction chamber 200 reaches 600 ℃, the outer wall of the accommodating container 100 only reaches 80 ℃, and the heat insulation effect is good, so that a heat dissipation device such as a water cooling device is not needed to dissipate heat of the accommodating container 100, and the production cost is reduced.
It should be understood that the number and connection of the first fixing plate 3111 and the first reflecting plate 3112, the second fixing plate 3211 and the second reflecting plate 3212, and the third fixing plate 3311 and the third reflecting plate 3312 may be other arrangements, the winding manner of the first heating element 312, the second heating element 322, and the third heating element 332 may be other arrangements, and the first reflecting mechanism 311, the second reflecting mechanism 321, and the third reflecting mechanism 331 may be adaptively changed according to the structural shape of the reaction chamber 200, which is not limited herein.
Further, the first heating element 312, the second heating element 322 and the third heating element 332 are heating tubes.
In this embodiment, the heating pipes can be respectively fixed to the first reflection mechanism 311, the second reflection mechanism 321 and the third reflection mechanism 331 by means of fastening, so as to heat the reaction chamber 200, with fast heating rate and high efficiency.
In summary, the embodiment of the invention provides the heating device 11 and the ALD apparatus 10, wherein the heating assembly 300 surrounds the periphery of the reaction chamber 200 to uniformly heat the periphery of the reaction chamber 200, so as to ensure the heating efficiency, and thus the film plating is performed smoothly. The heating assembly 300 comprises a first heating assembly 310, a second heating assembly 320 and a third heating assembly 330 which are sequentially connected, wherein the first heating assembly 310, the second heating assembly 320 and the third heating assembly 330 are respectively arranged at the top, the side periphery and the bottom of the reaction cavity 200, so that the heating assembly 300 completely covers the periphery of the reaction cavity 200, heat emitted by the heating assembly fully acts on the whole reaction cavity 200, the reaction cavity 200 is ensured to be heated uniformly, and the coating efficiency is further improved. The first heating assembly 310 includes a first reflection mechanism 311 and a first heating member 312, the second heating assembly 320 includes a second reflection mechanism 321 and a second heating member 322, the third heating assembly 330 includes a third reflection mechanism 331 and a third heating member 332, the first reflection mechanism 311 is composed of a plurality of first reflection plates 3112, the second reflection mechanism 321 is composed of a plurality of second reflection plates 3212, and the third reflection mechanism 331 is composed of a plurality of third reflection plates 3312, thereby reducing heat transfer and enabling heat to sufficiently act on the reaction chamber 200, improving heating efficiency. The first heating element 312, the second heating element 322 and the third heating element are all heating tubes and uniformly wound around the first reflecting mechanism 311, the second reflecting mechanism 321 and the third reflecting mechanism 331, respectively, so as to uniformly heat the reaction chamber 200.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (10)

1. The heating device is characterized by comprising a containing container, a reaction cavity and a heating component;
the reaction cavity is arranged in the accommodating container and is used for coating, and the heating component is arranged in the accommodating container and surrounds all the outer surfaces of the reaction cavity so as to heat the reaction cavity.
2. The heating device of claim 1, wherein the heating assembly comprises:
a first heating assembly located at the top of the reaction chamber;
a second heating element located at a side peripheral portion of the reaction chamber; and;
a third heating component positioned at the bottom of the reaction cavity;
the first, second and third heating assemblies cover all outer surfaces of the reaction chamber to heat all outer surfaces of the reaction chamber.
3. The heating device of claim 2, wherein the first heating assembly comprises a first reflective mechanism and a first heating element, the second heating assembly comprises a second reflective mechanism and a second heating element, and the third heating assembly comprises a third reflective mechanism and a third heating element;
the first heating element, the second heating element and the third heating element are all arranged outside the reaction cavity at intervals, the first heating element is arranged at intervals on the first reflecting mechanism, and the first reflecting mechanism is used for reflecting heat emitted by the first heating element;
the second heating parts are arranged at intervals on the second reflecting mechanism, and the second reflecting mechanism is used for reflecting heat emitted by the second heating parts;
the third heating parts are arranged at intervals on the third reflecting mechanism, and the third reflecting mechanism is used for reflecting heat emitted by the third heating parts.
4. A heating apparatus according to claim 3, wherein the first reflecting means and the third reflecting means are each plate-shaped, and the first heating member is provided between the reaction chamber and the first reflecting means and around the first reflecting means;
the third heating piece is arranged between the reaction cavity and the third reflecting mechanism and is wound on the third reflecting mechanism.
5. A heating device according to claim 3, wherein the first reflecting means is provided with a first lead-out hole, the third reflecting means is provided with a second lead-out hole, the first lead-out hole is provided for the first heating element to pass through, and the second lead-out hole is provided for the third heating element to pass through.
6. A heating apparatus according to claim 3, wherein the second reflecting means has a cylindrical shape, and the second heating member is disposed between the reaction chamber and the second reflecting means and is wound around an inner wall of the second reflecting means.
7. The heating device of claim 3, wherein the first reflecting mechanism comprises a first fixing plate and a plurality of first reflecting plates, the first fixing plate is fixedly connected with the top of the reaction chamber, and the plurality of first reflecting plates are arranged on one side, away from the reaction chamber, of the first fixing plate in parallel;
the second reflecting mechanism comprises two second fixing plates and a plurality of second reflecting plates, the two second fixing plates are fixedly connected with the bottom of the accommodating container, and the plurality of second reflecting plates are arranged between the two fixing plates in parallel;
the third reflection mechanism comprises a third fixing plate and a plurality of third reflection plates, wherein the third fixing plate is fixedly connected with the bottom of the accommodating container, and the third reflection plates are arranged on one side, away from the reaction cavity, of the third fixing plate in parallel.
8. The heating device of claim 7, wherein the first fixing plate and the first reflecting plate are both provided with first through holes, and the first reflecting plate is fixed to the first fixing plate by bolts;
the second fixing plate and the second reflecting plate are respectively provided with a second through hole, and the second reflecting plate is fixed on the second fixing plate through bolts;
the third fixing plate and the third reflecting plate are respectively provided with a third through hole, and the third reflecting plate is fixed on the third fixing plate through bolts.
9. A heating device according to claim 3, wherein the first heating element, the second heating element and the third heating element are heating tubes.
10. An ALD apparatus comprising a heating device according to any one of claims 1 to 9.
CN202310189792.0A 2023-03-01 2023-03-01 Heating device and ALD equipment Pending CN116043195A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310189792.0A CN116043195A (en) 2023-03-01 2023-03-01 Heating device and ALD equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310189792.0A CN116043195A (en) 2023-03-01 2023-03-01 Heating device and ALD equipment

Publications (1)

Publication Number Publication Date
CN116043195A true CN116043195A (en) 2023-05-02

Family

ID=86129704

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310189792.0A Pending CN116043195A (en) 2023-03-01 2023-03-01 Heating device and ALD equipment

Country Status (1)

Country Link
CN (1) CN116043195A (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156008A (en) * 1999-11-24 2001-06-08 Ichiro Takahashi Heat treatment equipment for semiconductor wafer
JP2009033116A (en) * 2007-06-25 2009-02-12 Hitachi Kokusai Electric Inc Heating device, substrate-treating device, and method of manufacturing semiconductor device
CN112323045A (en) * 2020-12-03 2021-02-05 无锡市邑晶半导体科技有限公司 ALD reaction chamber
CN112359346A (en) * 2020-12-03 2021-02-12 无锡市邑晶半导体科技有限公司 ALD heating element
CN112458436A (en) * 2020-12-03 2021-03-09 无锡市邑晶半导体科技有限公司 ALD reactor
CN112481604A (en) * 2020-12-03 2021-03-12 无锡市邑晶半导体科技有限公司 ALD processing equipment and processing method
CN214694359U (en) * 2020-12-03 2021-11-12 无锡市邑晶半导体科技有限公司 ALD base member transfer device
CN114959659A (en) * 2022-03-31 2022-08-30 松山湖材料实验室 Heating device for sample heating

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156008A (en) * 1999-11-24 2001-06-08 Ichiro Takahashi Heat treatment equipment for semiconductor wafer
JP2009033116A (en) * 2007-06-25 2009-02-12 Hitachi Kokusai Electric Inc Heating device, substrate-treating device, and method of manufacturing semiconductor device
CN112323045A (en) * 2020-12-03 2021-02-05 无锡市邑晶半导体科技有限公司 ALD reaction chamber
CN112359346A (en) * 2020-12-03 2021-02-12 无锡市邑晶半导体科技有限公司 ALD heating element
CN112458436A (en) * 2020-12-03 2021-03-09 无锡市邑晶半导体科技有限公司 ALD reactor
CN112481604A (en) * 2020-12-03 2021-03-12 无锡市邑晶半导体科技有限公司 ALD processing equipment and processing method
CN214694359U (en) * 2020-12-03 2021-11-12 无锡市邑晶半导体科技有限公司 ALD base member transfer device
CN114959659A (en) * 2022-03-31 2022-08-30 松山湖材料实验室 Heating device for sample heating

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
明亮等: "《医用实验化学(第2版)》", 31 January 2022, 东南大学出版社, pages: 103 - 106 *

Similar Documents

Publication Publication Date Title
US10269541B2 (en) Workpiece processing chamber having a thermal controlled microwave window
US9679750B2 (en) Deposition apparatus
JP7557548B2 (en) Heating device and semiconductor processing device
US8733280B2 (en) Showerhead for processing chamber
US10508333B2 (en) Heating apparatus and substrate processing apparatus having the same
US20170110294A1 (en) System and method for treating substrate
CN102105253A (en) High temperature electrostatic chuck and using method
KR101481094B1 (en) Heating device of evaporation source
JP2008526005A (en) CVD reactor with RF-heated process chamber
CN116043195A (en) Heating device and ALD equipment
US10039157B2 (en) Workpiece processing chamber having a rotary microwave plasma source
CN103938186A (en) Tray, MOCVD reaction chamber and MOCVD device
KR102002316B1 (en) evaporation source and thin flim deposition apparatus having the same
WO2019000484A1 (en) Evaporation source heating system
US20150184290A1 (en) Radiation shielding for a cvd reactor
US10134567B2 (en) Microwave plasma processing apparatus
JPH10326788A (en) Heater unit and substrate treating device
WO1986006755A1 (en) Selective chemical vapor deposition method and apparatus
KR20150135107A (en) Wafer holder and deposition apparatus
US11703556B2 (en) Self-supporting flexible thermal radiation shield
KR101817040B1 (en) Vertical parylene coating vaporizing equipment
JP2000286464A (en) Thermoelectric module and manufacture of the same
US11312562B2 (en) Heat insulating container
JPH0338029A (en) Vapor growth equipment
KR20220104347A (en) Valve heating device of semiconductor equipment with constant temperature heating function

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Address after: 214000 Guanshan Road, Xinwu District, Wuxi City, Jiangsu Province

Applicant after: Wuxi Yiwen Microelectronics Technology Co.,Ltd.

Address before: 214000 Guanshan Road, Xinwu District, Wuxi City, Jiangsu Province

Applicant before: WUXI YIWEN ELECTRONIC TECHNOLOGY Co.,Ltd.