CN116037944A - Method for preparing micron-scale/nano-scale graded spherical copper powder by using plasma - Google Patents

Method for preparing micron-scale/nano-scale graded spherical copper powder by using plasma Download PDF

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CN116037944A
CN116037944A CN202211579251.0A CN202211579251A CN116037944A CN 116037944 A CN116037944 A CN 116037944A CN 202211579251 A CN202211579251 A CN 202211579251A CN 116037944 A CN116037944 A CN 116037944A
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刘彬
刘咏
曹远奎
廖涛
朱刚强
王笑
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Jiangxi Yongtai Powder Metallurgy Co ltd
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Abstract

本发明公开了一种等离子体制备微米级/纳米级分级球形铜粉的方法,将不规则形态的原料铜粉置于振动送粉器中,通过振动送粉器和载气将原料铜粉送入反应腔室,控制反应腔室的压力为10~15psig,原料铜粉被位于反应腔室顶部中心的等离子体发生器发射的等离子焰矩汽化为铜蒸汽,铜蒸汽接触有控温装置的反应腔壁冷却球化获得球形铜粉,其中纳米级的球形铜粉粘附于反应腔室壁中,微米级的球形铜粉则落入位于反应腔室壁下方的底部收集罐中;所述底部收集罐的顶部侧面设置有排气口。本发明制备的铜粉末不仅具有微米级/纳米级两种尺度,还具有球形度好、球化率高、杂质含量低的特点,所得产品的性能优良,广泛应用于导电、润滑和催化等领域。

Figure 202211579251

The invention discloses a method for preparing micron/nanometer graded spherical copper powder by plasma. The raw material copper powder with irregular shape is placed in a vibrating powder feeder, and the raw material copper powder is fed through the vibrating powder feeder and carrier gas. Into the reaction chamber, the pressure of the reaction chamber is controlled at 10-15 psig, the raw copper powder is vaporized into copper vapor by the plasma flame moment emitted by the plasma generator located at the top center of the reaction chamber, and the copper vapor contacts the reaction with a temperature control device The chamber wall is cooled and spheroidized to obtain spherical copper powder, wherein the nano-scale spherical copper powder adheres to the wall of the reaction chamber, and the micron-scale spherical copper powder falls into the bottom collection tank located below the reaction chamber wall; the bottom The top side of the collection tank is provided with an exhaust port. The copper powder prepared by the present invention not only has two scales of micron scale/nano scale, but also has the characteristics of good sphericity, high spheroidization rate, and low impurity content. .

Figure 202211579251

Description

一种等离子体制备微米级/纳米级分级球形铜粉的方法A method for plasma preparation of micron/nanometer graded spherical copper powder

技术领域technical field

本发明属于金属技术材料制备领域,具体涉及一种等离子体制备微米级/纳米级分级球形铜粉的方法。The invention belongs to the field of metal technology material preparation, and in particular relates to a method for preparing micron-level/nano-level graded spherical copper powder by plasma.

背景技术Background technique

铜元素是人类生命体所必需的微量元素,参与多种生理机制,且金属铜具有优良的塑性、耐磨性、耐腐蚀性和导电导热性,故而铜已被广泛应用于运输,航空航天,电子信息,外科生物材料和能源领域。然而传统的金属制造方法对材料利用率低且制得的产品结构简单,无法满足科技进步带来的市场需求。因此增材制造技术应运而生,其为低成本、高效率的三维复杂零件制备提供了一条可行的途径。用于增材制造的金属粉末要求球形度高,流动性好,显然普通铜粉不能满足要求。Copper is an essential trace element for human life, and it participates in various physiological mechanisms, and metal copper has excellent plasticity, wear resistance, corrosion resistance and electrical and thermal conductivity, so copper has been widely used in transportation, aerospace, Electronic information, surgical biomaterials and energy fields. However, the traditional metal manufacturing method has a low material utilization rate and a simple product structure, which cannot meet the market demand brought about by technological progress. Therefore, additive manufacturing technology came into being, which provides a feasible way for low-cost and high-efficiency preparation of three-dimensional complex parts. The metal powder used for additive manufacturing requires high sphericity and good fluidity. Obviously, ordinary copper powder cannot meet the requirements.

球形铜粉作为一种特殊的高性能粉末,能最大限度地消除团聚的影响,且粉体内部的缺陷得以改善,同时球形铜粉分布均匀,表面形貌规则,粉体的堆积密度显著增大。其中,微米级球形铜粉可用于增材制造领域,纳米级球形铜粉在金属注射成型、球栅电子封装、热喷涂等工业生产领域也具有举足轻重的地位。目前国内外制备微米/纳米球形铜粉的主流技术仍是化学还原、电化学、雾化制粉等方法。随着科学技术的发展,为谋求球形铜粉的综合性能得以提升,制备纳米铜粉的各类方法也层出不穷。等离子体由于具有极高的能量密度、温度极高、无电极污染且可进行灵活控制而经常被用作热源,成为制备具有稳定成分、高球形度和良好分散性的球形金属粉末的极好方法。等离子体的加热效率极高,其中心温度最高可以达到10000℃,足以使所有难熔金属颗粒在通过加热区时发生熔化甚至汽化,液滴在表面张力的作用下凝结成球形,并以极大的冷却速度离开加热区,从而实现颗粒的快速熔化和快速冷却,最终获得具有高球形度和良好流动性的球形粉末。As a special high-performance powder, spherical copper powder can eliminate the influence of agglomeration to the greatest extent, and the internal defects of the powder can be improved. At the same time, the spherical copper powder is evenly distributed, the surface morphology is regular, and the bulk density of the powder is significantly increased. . Among them, micron-sized spherical copper powder can be used in the field of additive manufacturing, and nano-sized spherical copper powder also plays a pivotal role in industrial production fields such as metal injection molding, ball grid electronic packaging, and thermal spraying. At present, the mainstream technologies for preparing micro/nano spherical copper powder at home and abroad are still chemical reduction, electrochemical, atomization and other methods. With the development of science and technology, in order to improve the comprehensive performance of spherical copper powder, various methods of preparing nano-copper powder emerge in an endless stream. Plasma is often used as a heat source due to its extremely high energy density, extremely high temperature, no electrode contamination, and flexible control, making it an excellent method for preparing spherical metal powders with stable composition, high sphericity, and good dispersion . The heating efficiency of the plasma is extremely high, and its central temperature can reach up to 10,000°C, which is enough to melt or even vaporize all refractory metal particles when passing through the heating zone. The cooling speed leaves the heating zone, so as to realize the rapid melting and rapid cooling of the particles, and finally obtain the spherical powder with high sphericity and good fluidity.

例如,中国发明专利CN109513944A,通过将一定化学成分的铜合金熔炼锻造成棒料,再利用等离子旋转电极制粉设备把合金棒料熔融成液滴,然后在离心力的作用下破碎成更为细小的液滴,经快速凝固成为球形粉末,得到所需高纯度、高球形度的铜合金粉末。中国发明专利CN109824052A,采用等离子体作为热源,以高纯气体MClx作为原料,当原料气体通过等离子高温区时,与H2发生气相还原反应,生成的高纯单质气体M在经过冷却区后再快速冷凝成所需纳米粉体。For example, the Chinese invention patent CN109513944A melts and forges a copper alloy with a certain chemical composition into a bar, and then uses a plasma rotating electrode powder making equipment to melt the alloy bar into droplets, and then breaks it into smaller particles under the action of centrifugal force. The liquid droplets are quickly solidified into spherical powder, and the desired high-purity, high-sphericity copper alloy powder is obtained. Chinese invention patent CN109824052A uses plasma as a heat source and high-purity gas MCl x as a raw material. When the raw material gas passes through the plasma high-temperature zone, it undergoes a gas-phase reduction reaction with H 2 . Quickly condense into the desired nanopowder.

综上,上述方法普遍存在着无法同时制备微米级/纳米级球形粉末且制得的粉末易团聚氧化、产品稳定性差等不同的问题,难以满足现代社会对单质铜粉体越来越高的质量及多样化要求。因此,开发一种制备工艺简单、可同时制备高性能微米级/纳米级球形粉末的方法是很有必要的。In summary, the above-mentioned methods generally have different problems such as the inability to prepare micron-scale/nano-scale spherical powders at the same time, and the prepared powders are easy to agglomerate and oxidize, and the product stability is poor. and diverse requirements. Therefore, it is necessary to develop a method that has a simple preparation process and can simultaneously prepare high-performance micron-scale/nano-scale spherical powders.

发明内容Contents of the invention

针对上述技术的所存在的各类问题,本发明旨在提供一种等离子体制备微米级/纳米级分级球形铜粉的方法,本发明的方法简便快捷,能够同步制得微米级与纳米级的粉末,且所制得的微米级与纳米级的粉末球形度高、流动性好、纯度高。Aiming at the various problems existing in the above-mentioned technologies, the present invention aims to provide a method for preparing micron-scale/nano-scale graded spherical copper powder by plasma. The method of the present invention is simple and fast, and can simultaneously produce micron-scale and nano-scale powder, and the prepared micron-scale and nano-scale powders have high sphericity, good fluidity and high purity.

为了实现上述目的,本发明采用如下技术方案:In order to achieve the above object, the present invention adopts the following technical solutions:

本发明一种等离子体制备微米级/纳米级分级球形铜粉的方法,将不规则形态的原料铜粉置于振动送粉器中,通过振动送粉器和载气将原料铜粉送入反应腔室,控制反应腔室的压力为10~15psig,原料铜粉被位于反应腔室顶部中心的等离子体发生器发射的等离子焰矩汽化为铜蒸汽,铜蒸汽接触有控温装置的反应腔壁冷却球化获得球形铜粉,其中纳米级的球形铜粉粘附于等离子体反应腔室壁中,微米级的球形铜粉则落入位于等离子体反应腔室壁下方的底部收集罐中;所述底部收集罐的顶部侧面设置有排气口。The invention discloses a method for preparing micron-level/nano-level graded spherical copper powder by plasma. The raw material copper powder of irregular shape is placed in a vibrating powder feeder, and the raw material copper powder is sent into the reaction through the vibrating powder feeder and carrier gas. Chamber, control the pressure of the reaction chamber to 10-15 psig, the raw copper powder is vaporized into copper vapor by the plasma flame moment emitted by the plasma generator located at the top center of the reaction chamber, and the copper vapor contacts the reaction chamber wall with a temperature control device Cooling spheroidization obtains spherical copper powder, wherein the nano-scale spherical copper powder adheres to the wall of the plasma reaction chamber, and the micron-scale spherical copper powder falls into the bottom collection tank located below the plasma reaction chamber wall; The top side of the bottom collection tank is provided with an exhaust port.

本发明基于感应等离子球化制粉系统,原料铜粉末通常轴向输送到等离子体放电的中心,在粉末颗粒接触到等离子体时,瞬间被加热熔化或直接汽化。汽化后的铜蒸汽接触到低温区及通有冷却水的反应器壁首先液化成细小的铜液滴,继而在快速冷凝过程中在表面张力的作用下发生凝固,通过调控反应室中的气压及气体的流量,使得大部分质量轻、粘度高的纳米级球形铜粉粘附在反应器腔壁,小部分质量轻的纳米级球形铜粉则被排气口除去,而质量重、微米级的球形铜粉则落入底部收集罐中,先收集底部收集罐中微米级球形铜粉,再通过在反应器内部增设的螺旋刮粉装置获得腔壁上纳米尺寸的球形铜粉,采用本发明的方法能够同步制得微米级与纳米级的球形粉末。The present invention is based on the induction plasma spheroidization pulverizing system. The raw copper powder is usually axially transported to the center of the plasma discharge, and when the powder particles touch the plasma, they are instantly heated and melted or directly vaporized. The vaporized copper vapor contacts the low-temperature zone and the reactor wall with cooling water firstly liquefies into fine copper droplets, and then solidifies under the action of surface tension during the rapid condensation process. By adjusting the pressure in the reaction chamber and The flow rate of the gas makes most of the light-weight and high-viscosity nano-scale spherical copper powder adhere to the wall of the reactor chamber, and a small part of the light-weight nano-scale spherical copper powder is removed by the exhaust port, while the heavy and micron-scale copper powder The spherical copper powder falls into the bottom collection tank, first collects the micron-sized spherical copper powder in the bottom collection tank, and then obtains the nanometer-sized spherical copper powder on the cavity wall through the spiral scraping device added inside the reactor. The method can simultaneously prepare spherical powders of micron and nanometer levels.

等离子炬出口处的等离子气体中包含了粉末熔融液滴或蒸汽,经过进一步处理,在载气进入排气口前将其从气流中抽出,以去除杂质气体。由于没有任何电极材料与等离子气体接触,故本发明提供的是一种无污染的粉末加工方法。这一特性特别适合于制备高纯度粉末,对粉末的熔点几乎没有限制。感应耦合高频无电极等离子体放电还可通过杂质的挥发或反应性挥发来减少杂质。制备过程中较低沸点的杂质从颗粒基质中逸出。该过程可将大粒径的铜粉或还原铜粉直接“一步式”生成微米级/纳米级球形铜粉的同时使粉末中杂质含量大大降低。The plasma gas at the exit of the plasma torch, which contains powder molten droplets or vapor, is further processed to remove the carrier gas from the gas stream before it enters the exhaust port to remove impurity gases. Since no electrode material is in contact with the plasma gas, the present invention provides a pollution-free powder processing method. This property is especially suitable for the preparation of high-purity powders, with almost no restrictions on the melting point of the powder. Inductively coupled high-frequency electrodeless plasma discharge can also reduce impurities through their volatilization or reactive volatilization. Impurities with lower boiling points escape from the granular matrix during preparation. This process can directly generate micron/nanometer spherical copper powder in one step from large particle size copper powder or reduced copper powder, while greatly reducing the impurity content in the powder.

优选的方案,所述原料铜粉的粒径为100~400目。In a preferred solution, the particle size of the raw copper powder is 100-400 mesh.

优选的方案,所述原料铜粉先经还原处理获得还原铜粉,再将还原铜粉置于振动送粉器中,所述还原铜粉的氧含量≤800ppm。In a preferred solution, the raw copper powder is firstly reduced to obtain reduced copper powder, and then the reduced copper powder is placed in a vibrating powder feeder, and the oxygen content of the reduced copper powder is ≤ 800 ppm.

进一步的优选,所述还原处理时,氢气通量为500~2000mL/min,优选为1000mL/min,所述还原处理的温度为200~400℃,优选为250℃,所述还原处理的时间为3~6h,优选4h。Further preferably, during the reduction treatment, the hydrogen flux is 500-2000mL/min, preferably 1000mL/min, the temperature of the reduction treatment is 200-400°C, preferably 250°C, and the reduction treatment time is 3~6h, preferably 4h.

在实际操作过程中,原料铜粉送入反应腔室前,先将反应腔室进行气体置换,排出装置中所有杂质气体,同时充入保护气氛阻止外界空气进入,并检测装置真空泄露与高压系统测漏。In the actual operation process, before the raw copper powder is sent into the reaction chamber, the reaction chamber is first replaced with gas, all impurity gases in the device are discharged, and a protective atmosphere is filled at the same time to prevent the outside air from entering, and the vacuum leak of the device and the high-pressure system are detected. leak test.

优选的方案,所述振动送粉器和载气将原料铜粉送入反应腔室时,控制振动频率为90~120Hz,优选115Hz,振动幅度为20~90μm,优选60~68μm;送粉速率为1.5~80g/min,优选6~7.5g/min。In a preferred solution, when the vibrating powder feeder and the carrier gas send the raw copper powder into the reaction chamber, the vibration frequency is controlled to be 90-120 Hz, preferably 115 Hz, and the vibration amplitude is 20-90 μm, preferably 60-68 μm; the powder feeding rate It is 1.5 to 80 g/min, preferably 6 to 7.5 g/min.

优选的方案,所述载气选自氩气、氮气、氦气中的至少一种。In a preferred solution, the carrier gas is selected from at least one of argon, nitrogen, and helium.

优选的方案,所述反应腔室通入非氧化气氛作为等离子气,所述非氧化气氛选自氩气,或氩气与氢气的混合气氛,所述载气与等离子气的流量之比为1~12:4~35,优选1:2。In a preferred solution, the reaction chamber is fed with a non-oxidizing atmosphere as the plasma gas, the non-oxidizing atmosphere is selected from argon, or a mixed atmosphere of argon and hydrogen, and the ratio of the flow rate of the carrier gas to the plasma gas is 1 ~12:4~35, preferably 1:2.

进一步的优选,所述氢气流量为0~10slpm,优选7.5slpm,氩气的流量为10~107slpm,优选40~46slpm。Further preferably, the hydrogen flow rate is 0-10 slpm, preferably 7.5 slpm, and the argon flow rate is 10-107 slpm, preferably 40-46 slpm.

在实际操作过程中,待等离子处于激发状态,通入等离子气,并使设备的实际功率达到预设值。In the actual operation process, when the plasma is in an excited state, the plasma gas is introduced, and the actual power of the equipment reaches the preset value.

进一步的优选,当铜粉选自非还原铜粉时,所述非氧化气氛选自氩气与氢气的混合气氛。Further preferably, when the copper powder is selected from non-reduced copper powder, the non-oxidizing atmosphere is selected from a mixed atmosphere of argon and hydrogen.

优选的方案,所述等离子体发生器的功率为10~15kw。In a preferred solution, the power of the plasma generator is 10-15kw.

优选的方案,所述反应腔室的内壁设置有螺旋刮粉装置。在实际操作过程中,先收集底部收集罐中微米级球形铜粉,再通过在反应器内部增设螺旋刮粉装置,获得腔壁上纳米尺寸的球形铜粉。In a preferred solution, the inner wall of the reaction chamber is provided with a spiral powder scraping device. In the actual operation process, first collect the micron-sized spherical copper powder in the bottom collection tank, and then add a spiral powder scraping device inside the reactor to obtain nano-sized spherical copper powder on the cavity wall.

原理与优势Principles and advantages

本发明采用还原铜粉或者先对原料铜粉进行氢化还原的预处理,以获得氧含量较低的还原铜粉。在外加电流产生的磁场作用下,采用的惰性气体氩气经电离后形成稳定的高密度等离子体流,其温度极高,可高达11000℃。当预处理过后的还原铜粉经振动送粉器和载气的输送,到达等离子焰矩高温区间时,低熔点的铜粉末会被瞬间汽化,铜蒸汽瞬时充满整个反应腔。在接触有控温装置的反应腔壁后,铜蒸汽先转化为熔融液滴,在表面张力作用下球化。通过调控反应室中的气压及各种气体的流量,使得大部分质量轻、粘度高的纳米级球形铜粉粘附在反应器腔壁,小部分质量轻的纳米级球形铜粉则被排气口除去,而质量重、微米级的球形铜粉则落入底部收集罐中,先收集底部收集罐中微米级球形铜粉,再通过在反应器内部增设的螺旋刮粉装置获得腔壁上纳米尺寸的球形铜粉。The present invention adopts reduced copper powder or performs hydrogenation reduction pretreatment on raw copper powder to obtain reduced copper powder with lower oxygen content. Under the action of the magnetic field generated by the applied current, the inert gas argon used is ionized to form a stable high-density plasma flow, and its temperature is extremely high, up to 11000 °C. When the pretreated reduced copper powder is transported by the vibrating powder feeder and the carrier gas, and reaches the high temperature range of the plasma flame moment, the copper powder with a low melting point will be vaporized instantly, and the copper vapor will instantly fill the entire reaction chamber. After contacting the wall of the reaction chamber with a temperature control device, the copper vapor is first converted into molten droplets, which are spheroidized under the action of surface tension. By adjusting the air pressure in the reaction chamber and the flow rate of various gases, most of the light-weight and high-viscosity nano-scale spherical copper powder adheres to the wall of the reactor cavity, and a small part of the light-weight nano-scale spherical copper powder is exhausted. The heavy, micron-sized spherical copper powder falls into the bottom collection tank, first collects the micron-sized spherical copper powder in the bottom collection tank, and then obtains nano Size of spherical copper powder.

本发明相比于现有技术具有以下有益效果:Compared with the prior art, the present invention has the following beneficial effects:

1.本发明可实现纳米级和微米级球形铜粉同时制备,所选原料粉末粒度范围广,杂质含量要求低,所得粉末球形度好、球化率高,在获得所需球形粉末的同时能够提升粉末纯度。1. The present invention can realize the simultaneous preparation of nano-scale and micron-scale spherical copper powder. The selected raw material powder has a wide particle size range and low impurity content requirements. The obtained powder has good sphericity and high spheroidization rate. Improves powder purity.

2.本发明工艺流程简单,“一步式”制备方式使实验周期大大缩短的同时收粉率得以提高,同时可以通过改变工作电流以改变实际工作功率,达到对等离子矩温度和产物粒径进行控制的效果。2. The technological process of the present invention is simple, and the "one-step" preparation method greatly shortens the experimental cycle and improves the powder collection rate. At the same time, the actual working power can be changed by changing the working current to achieve control of the plasma moment temperature and product particle size Effect.

附图说明Description of drawings

图1为本发明所述的一种等离子体制备纳米球形铜粉的装置结构示意图。Fig. 1 is a schematic structural diagram of a device for preparing nano-spherical copper powder by plasma according to the present invention.

图2为本发明实施例1中未等离子球化前铜粉末的扫描电镜显微图。Fig. 2 is a scanning electron micrograph of copper powder before plasma spheroidization in Example 1 of the present invention.

图3为本发明实施例1中制备的微米球形铜粉的扫描电镜显微图。Fig. 3 is a scanning electron micrograph of the micron-spherical copper powder prepared in Example 1 of the present invention.

图4为本发明实施例1中制备的纳米球形铜粉的扫描电镜显微图。FIG. 4 is a scanning electron micrograph of the nano-spherical copper powder prepared in Example 1 of the present invention.

图5为本发明对比例1中制备的微米球形铜粉的扫描电镜显微图。FIG. 5 is a scanning electron micrograph of the micron-spherical copper powder prepared in Comparative Example 1 of the present invention.

具体实施方式Detailed ways

为了便于理解本发明,下文将结合说明书附图和较佳的实施例对本文发明做更全面、细致地描述,但本发明的保护范围并不限于以下具体实施例。In order to facilitate the understanding of the present invention, the invention will be described more comprehensively and in detail below in conjunction with the accompanying drawings and preferred embodiments, but the protection scope of the present invention is not limited to the following specific embodiments.

除非另有定义,下文中所使用的所有专业术语与本领域技术人员通常理解含义相同。本文中所使用的专业术语只是为了描述具体实施例的目的,并不是旨在限制本发明的保护范围。Unless otherwise defined, all technical terms used hereinafter have the same meanings as commonly understood by those skilled in the art. The terminology used herein is only for the purpose of describing specific embodiments, and is not intended to limit the protection scope of the present invention.

除非另有特别说明,本发明中用到的各种原材料、试剂、仪器和设备等均可通过市场购买得到或者可通过现有方法制备得到。Unless otherwise specified, various raw materials, reagents, instruments and equipment used in the present invention can be purchased from the market or prepared by existing methods.

实施例1Example 1

球形铜粉的制备(还原铜粉、不加氢气):Preparation of spherical copper powder (reduced copper powder, without adding hydrogen):

首先,将纯度为99.9%,粒度为300目(48μm)的原料铜粉置于管式氢气炉中,按照氢化工艺路线,控制炉内温度为250℃,氢气通量设置为1000mL/min,恒温4个小时;第二,将得到的还原铜粉装入振动送粉器中,打开设备冷却水,通过气体净化系统排出装置中所有杂质·气体,同时充入惰性保护气氛氩气,控制氩气的流量为17slpm;第三,待系统自检无真空泄露且反应室内空气等杂质气体排尽后,关闭氩气并打开真空泵;第三,通过送粉控制器调节振动频率为115Hz、振动幅度为68μm来控制该状态下铜粉的实际送粉速率为6g/min;第四,打开氩气气源并调节载气调压阀至60mm(5slpm)、等离子气调压阀至40mm(10slpm)、氩气调压阀至80mm(28slpm),手动设置反应室内压力为3.80psig;第五,切换到高频模式,增大电压值至4V,待实际电流稳定至2.2A后,增加反应室压力至7.0psig的同时稳定实际电流值,压力每次增加2.0psig重复上述步骤,直至压力达到15psig;第六,当实际功率、反应室内气压稳定后,此时等离子焰矩温度趋于稳定,开始以前面所设置的送粉速率恒定送粉;第七,送粉结束后,关闭高频模式,关闭所有气源,系统自动熄火停机,待整个装置冷却到室温后,取出收集罐中的粉末,通过反应器内部增设的螺旋刮粉装置,收集粘附在反应室腔壁的纳米球形铜粉。Firstly, the raw copper powder with a purity of 99.9% and a particle size of 300 mesh (48 μm) was placed in a tubular hydrogen furnace. According to the hydrogenation process route, the temperature in the furnace was controlled at 250 °C, the hydrogen flux was set at 1000 mL/min, and the temperature was constant. 4 hours; second, put the obtained reduced copper powder into the vibrating powder feeder, turn on the cooling water of the equipment, discharge all impurities and gases in the device through the gas purification system, and fill in an inert protective atmosphere of argon at the same time to control the argon The flow rate is 17slpm; thirdly, after the system self-test has no vacuum leakage and the air and other impurity gases in the reaction chamber are exhausted, turn off the argon gas and turn on the vacuum pump; thirdly, adjust the vibration frequency to 115Hz and the vibration amplitude to 68μm to control the actual powder feeding rate of copper powder in this state is 6g/min; Fourth, open the argon gas source and adjust the carrier gas pressure regulating valve to 60mm (5slpm), the plasma gas pressure regulating valve to 40mm (10slpm), Argon pressure regulating valve to 80mm (28slpm), manually set the pressure in the reaction chamber to 3.80psig; fifth, switch to high frequency mode, increase the voltage value to 4V, after the actual current stabilizes to 2.2A, increase the pressure in the reaction chamber to While stabilizing the actual current value at 7.0 psig, the pressure is increased by 2.0 psig each time and repeat the above steps until the pressure reaches 15 psig; sixth, when the actual power and the pressure in the reaction chamber are stabilized, the temperature of the plasma flame moment tends to be stable at this time, and start to The set powder feeding rate is constant; seventh, after the powder feeding is completed, turn off the high-frequency mode, turn off all air sources, and the system will automatically turn off and stop. After the whole device cools down to room temperature, take out the powder in the collection tank and pass the reaction The spiral powder scraping device added inside the device collects the nano-spherical copper powder adhering to the wall of the reaction chamber.

图1为本发明所述的一种等离子体制备纳米球形铜粉的装置结构示意图。图2为本实施例中原料铜粉的SEM微观形貌照片。图3为本实施例中制备得到的微米球形铜粉的SEM微观形貌照片,由图3可知,微米球形铜粉的球形度好,表面光洁度好,粒度分布均匀,大部分粉末粒径在20-50μm之间。图4为本实施例中制备得到的纳米球形铜粉的SEM微观形貌照片,由4可知,纳米球形铜粉的球形度好,表面光洁度好,粒度分布均处于100nm以内。Fig. 1 is a schematic structural diagram of a device for preparing nano-spherical copper powder by plasma according to the present invention. FIG. 2 is a SEM microscopic photo of the raw copper powder in this embodiment. Fig. 3 is the SEM microscopic appearance photograph of the micron spherical copper powder prepared in the present embodiment, as can be seen from Fig. 3, the spherical degree of micron spherical copper powder is good, and surface finish is good, and particle size distribution is uniform, and most of powder particle diameters are in 20 Between -50μm. Fig. 4 is the SEM microscopic topography photo of the nano-spherical copper powder prepared in this embodiment, as can be seen from 4, the nano-spherical copper powder has good sphericity, good surface finish, and particle size distribution is within 100nm.

实施例2Example 2

球形铜粉的制备(非还原铜粉、加氢气):Preparation of spherical copper powder (non-reduced copper powder, hydrogenation):

首先,将纯度为99.9%,粒度为300目(48μm)的铜粉装入振动送粉器中,打开设备冷却水,通过气体净化系统排出装置中所有杂质气体,同时充入惰性保护气氛氩气,控制氩气的流量为17slpm;第二,待系统自检无真空泄露且反应室内空气等杂质气体排尽后,关闭氩气并打开真空泵;第三,通过送粉控制器调节振动频率为115Hz、振动幅度为68μm来控制该状态下铜粉的实际送粉速率为6g/min;第四,打开氩气气源并调节载气调压阀至60mm(5slpm)、等离子气调压阀至40mm(10slpm)、氩气调压阀至80mm(28slpm),手动设置反应室内压力为3.80psig;第五,切换到高频模式,增大电压值至4V,待实际电流稳定至2.2A后,增加反应室压力至7.0psig的同时稳定实际电流值,压力每次增加2.0psig重复上述步骤,随着反应室气压增至11.0psig时打开氢气气源并调节氢气调压阀至15mm(7.5slpm),维持实际电流至2.23A,再每次增加1.0psig压力值重复上述步骤,具体功率与压力及氢气流量对照表如表1;第六,当实际功率、反应室内气压稳定后,此时等离子焰矩温度趋于稳定,开始以前面所设置的送粉速率恒定送粉;第七,送粉结束后,关闭高频模式,关闭所有气源,系统自动熄火停机,待整个装置冷却到室温后,取出收集罐中的微米球形铜粉,通过反应器内部增设的螺旋刮粉装置,收集粘附在反应室腔壁的纳米球形铜粉。First, put copper powder with a purity of 99.9% and a particle size of 300 mesh (48 μm) into the vibrating powder feeder, turn on the cooling water of the equipment, discharge all impurity gases in the device through the gas purification system, and fill it with an inert protective atmosphere of argon , control the flow rate of argon gas to 17slpm; secondly, after the system self-checks that there is no vacuum leak and the impurity gas such as air in the reaction chamber is exhausted, turn off the argon gas and turn on the vacuum pump; thirdly, adjust the vibration frequency to 115Hz through the powder feeding controller , The vibration amplitude is 68μm to control the actual powder feeding rate of copper powder in this state to 6g/min; Fourth, turn on the argon gas source and adjust the carrier gas pressure regulating valve to 60mm (5slpm), the plasma gas pressure regulating valve to 40mm (10slpm), argon pressure regulating valve to 80mm (28slpm), manually set the pressure in the reaction chamber to 3.80psig; fifth, switch to high frequency mode, increase the voltage value to 4V, after the actual current stabilizes to 2.2A, increase When the pressure in the reaction chamber reaches 7.0 psig, the actual current value is stabilized, and the pressure is increased by 2.0 psig each time. Repeat the above steps. When the pressure in the reaction chamber increases to 11.0 psig, turn on the hydrogen gas source and adjust the hydrogen pressure regulating valve to 15 mm (7.5 slpm). Maintain the actual current to 2.23A, and then repeat the above steps by increasing the pressure value by 1.0 psig each time. The specific power, pressure and hydrogen flow comparison table are shown in Table 1; sixth, when the actual power and the pressure in the reaction chamber are stable, the plasma flame moment The temperature tends to be stable, and start to feed powder at the previously set powder feeding rate; seventh, after the powder feeding is completed, turn off the high-frequency mode, turn off all air sources, and the system will automatically turn off and stop. After the whole device cools down to room temperature, take it out The micron-spherical copper powder in the collection tank is collected by the spiral powder scraping device added inside the reactor to collect the nano-spherical copper powder adhering to the wall of the reaction chamber.

由于铜粉易氧化且球化实验前未进行氢化还原处理,实验中又通入大量的氢气,导致制备的粉末湿度较高、粘性较大易团聚,但仍制得微米及纳米球形铜粉。其中,球形铜粉的球形度好,大部分微米级铜粉粒径在50μm左右,纳米球形铜粉粒度分布均处于100nm内。Because the copper powder is easy to oxidize and the hydrogenation reduction treatment was not carried out before the spheroidization experiment, and a large amount of hydrogen gas was introduced in the experiment, resulting in high humidity, high viscosity and easy agglomeration of the prepared powder, but the micron and nanometer spherical copper powder was still obtained. Among them, the spherical copper powder has a good sphericity, the particle size of most micron-sized copper powder is about 50 μm, and the particle size distribution of the nano-spherical copper powder is within 100 nm.

表1功率与气压及氢气流量对照表Table 1 Power and air pressure and hydrogen flow comparison table

Figure BDA0003988460460000071
Figure BDA0003988460460000071

对比例1Comparative example 1

球形铜粉的制备(降低等离子球化功率至9KW,反应室气压至9.0psig):Preparation of spherical copper powder (reduce plasma spheroidizing power to 9KW, reaction chamber pressure to 9.0psig):

首先,将纯度为99.9%,粒度为300目(48μm)的铜粉装入振动送粉器中,打开设备冷却水,通过气体净化系统排出装置中所有杂质气体,同时充入惰性保护气氛氩气,控制氩气的流量为17slpm;第二,待系统自检无真空泄露且反应室内空气等杂质气体排尽后,关闭氩气并打开真空泵;第三,通过送粉控制器调节振动频率为110Hz、振动幅度为60μm来控制该状态下铜粉的实际送粉速率为8g/min;第四,打开氩气气源并调节载气调压阀至60mm(5slpm)、等离子气调压阀至40mm(10slpm)、氩气调压阀至80mm(28slpm),手动设置反应室内压力为3.80psig;第五,切换到高频模式,增大电压值至4V,待实际电流稳定至2.15A后,增加反应室压力至7.0psig的同时稳定实际电流值,压力增加2.0psig重复上述步骤,随着反应室气压增至9.0psig时停止加压,并将等离子球化功率调整至9KW;第六,当实际功率、反应室内气压稳定后,此时等离子焰矩温度趋于稳定,开始以前面所设置的送粉速率恒定送粉;第七,送粉结束后,关闭高频模式,关闭所有气源,系统自动熄火停机,待整个装置冷却到室温后,取出收集罐中的粉末,通过反应器内部增设的螺旋刮粉装置,收集粘附在反应室腔壁的纳米球形铜粉。First, put copper powder with a purity of 99.9% and a particle size of 300 mesh (48 μm) into the vibrating powder feeder, turn on the cooling water of the equipment, discharge all impurity gases in the device through the gas purification system, and fill it with an inert protective atmosphere of argon , control the flow rate of argon gas to 17slpm; secondly, after the system self-checks that there is no vacuum leak and the impurity gas such as air in the reaction chamber is exhausted, turn off the argon gas and turn on the vacuum pump; thirdly, adjust the vibration frequency to 110Hz through the powder feeding controller , The vibration amplitude is 60μm to control the actual powder feeding rate of copper powder in this state to 8g/min; Fourth, turn on the argon gas source and adjust the carrier gas pressure regulating valve to 60mm (5slpm), the plasma gas pressure regulating valve to 40mm (10slpm), the argon pressure regulating valve to 80mm (28slpm), manually set the pressure in the reaction chamber to 3.80psig; fifth, switch to high frequency mode, increase the voltage value to 4V, after the actual current stabilizes to 2.15A, increase When the pressure of the reaction chamber reaches 7.0 psig, the actual current value is stabilized, and the pressure is increased by 2.0 psig to repeat the above steps. When the pressure of the reaction chamber increases to 9.0 psig, the pressure is stopped, and the plasma spheroidizing power is adjusted to 9KW; sixth, when the actual After the power and the air pressure in the reaction chamber are stabilized, the temperature of the plasma flame moment tends to be stable at this time, and the powder feeding rate starts to be constant at the previously set powder feeding rate; seventh, after the powder feeding is completed, turn off the high-frequency mode, turn off all gas sources, and the system After the whole device is cooled to room temperature, the powder in the collection tank is taken out, and the nano-spherical copper powder adhering to the wall of the reaction chamber is collected through the spiral powder scraping device added inside the reactor.

图5为本实施例中制备得到的微米球形铜粉的SEM微观形貌照片,由图5可知,由于气压不足,导致下落的纳米颗粒不能完全由排气口除去,落于底部收集罐中,导致制备的微米球形铜粉中存在部分纳米粉末。Fig. 5 is the SEM microscopic topography photo of the micron spherical copper powder prepared in the present embodiment, as can be seen from Fig. 5, due to insufficient air pressure, the falling nanoparticles cannot be completely removed by the exhaust port, and fall in the bottom collecting tank. As a result, some nanopowder exists in the prepared micron spherical copper powder.

Claims (10)

1. A method for preparing micron-scale/nano-scale graded spherical copper powder by using plasma is characterized by comprising the following steps: placing raw copper powder in an irregular form into a vibration powder feeder, feeding the raw copper powder into a reaction chamber through the vibration powder feeder and carrier gas, controlling the pressure of the reaction chamber to be 10-15 psig, enabling the raw copper powder to be gasified into copper vapor by plasma flame moment emitted by a plasma generator positioned at the center of the top of the reaction chamber, enabling the copper vapor to contact with a reaction chamber wall with a temperature control device to be cooled and spheroidized to obtain spherical copper powder, wherein nano-scale spherical copper powder is adhered to the wall of the plasma reaction chamber, and enabling the micro-scale spherical copper powder to fall into a bottom collecting tank positioned below the wall of the plasma reaction chamber; the top side of the bottom collecting tank is provided with an exhaust port.
2. The method for preparing micron/nanometer grade graded spherical copper powder by using the plasma according to claim 1, wherein the method comprises the following steps: the grain diameter of the raw copper powder is 100-400 meshes.
3. A method for preparing micron/nanometer grade graded spherical copper powder by using plasma according to claim 1 or 2, wherein: the raw copper powder is subjected to reduction treatment to obtain reduced copper powder, and then the reduced copper powder is placed in a vibration powder feeder, wherein the oxygen content of the reduced copper powder is less than or equal to 800ppm.
4. A method for preparing micron/nanometer grade graded spherical copper powder by using plasma according to claim 3, wherein: during the reduction treatment, the hydrogen flux is 500-2000 mL/min, the temperature of the reduction treatment is 200-400 ℃, and the time of the reduction treatment is 3-6 h.
5. The method for preparing micron/nanometer grade graded spherical copper powder by using the plasma according to claim 1, wherein the method comprises the following steps: when the vibration powder feeder and carrier gas feed the raw copper powder into the reaction chamber, the vibration frequency is controlled to be 90-120 Hz, the vibration amplitude is 20-90 mu m, and the powder feeding speed is 1.5-80 g/min.
6. A method for preparing micron/nanometer grade graded spherical copper powder by using plasma according to claim 1 or 5, wherein the method comprises the following steps: the carrier gas is selected from at least one of argon, nitrogen and helium.
7. The method for preparing micron/nanometer grade graded spherical copper powder by using the plasma according to claim 1, wherein the method comprises the following steps: the non-oxidizing atmosphere is introduced into the reaction chamber as plasma gas, wherein the non-oxidizing atmosphere is selected from argon or a mixed atmosphere of argon and hydrogen, the flow ratio of carrier gas to plasma gas is 1-12:4-35, the flow of hydrogen is 0-10 slpm, and the flow of argon is 10-107 slpm.
8. The method for preparing micron/nanometer grade graded spherical copper powder by using the plasma according to claim 7, wherein the method comprises the following steps: when the raw copper powder is selected from non-reducing copper powder, the non-oxidizing atmosphere is selected from a mixed atmosphere of argon and hydrogen.
9. The method for preparing micron/nanometer grade graded spherical copper powder by using the plasma according to claim 1, wherein the method comprises the following steps: the power of the plasma generator is 10-15 kw.
10. The method for preparing micron/nanometer grade graded spherical copper powder by using the plasma according to claim 1, wherein the method comprises the following steps: the inner wall of the reaction chamber is provided with a spiral powder scraping device.
CN202211579251.0A 2022-12-08 2022-12-08 Method for preparing micron-scale/nano-scale graded spherical copper powder by using plasma Pending CN116037944A (en)

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