CN116034148A - Polishing composition for silicon substrate - Google Patents
Polishing composition for silicon substrate Download PDFInfo
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- CN116034148A CN116034148A CN202080104225.5A CN202080104225A CN116034148A CN 116034148 A CN116034148 A CN 116034148A CN 202080104225 A CN202080104225 A CN 202080104225A CN 116034148 A CN116034148 A CN 116034148A
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- China
- Prior art keywords
- component
- polishing
- polishing composition
- silicon substrate
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- 238000005498 polishing Methods 0.000 title claims abstract description 258
- 239000000203 mixture Substances 0.000 title claims abstract description 138
- 239000000758 substrate Substances 0.000 title claims abstract description 123
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 80
- 239000010703 silicon Substances 0.000 title claims abstract description 80
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 125000003277 amino group Chemical group 0.000 claims abstract description 38
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 47
- VVJKKWFAADXIJK-UHFFFAOYSA-N Allylamine Chemical compound NCC=C VVJKKWFAADXIJK-UHFFFAOYSA-N 0.000 claims description 34
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 19
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 13
- 150000001875 compounds Chemical group 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920000083 poly(allylamine) Polymers 0.000 claims description 11
- DYUWTXWIYMHBQS-UHFFFAOYSA-N n-prop-2-enylprop-2-en-1-amine Chemical compound C=CCNCC=C DYUWTXWIYMHBQS-UHFFFAOYSA-N 0.000 claims description 10
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 claims description 4
- 125000006575 electron-withdrawing group Chemical group 0.000 claims description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 4
- 239000000178 monomer Substances 0.000 claims description 4
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 claims description 3
- 125000001302 tertiary amino group Chemical group 0.000 claims description 3
- 238000004378 air conditioning Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 44
- 239000012141 concentrate Substances 0.000 abstract description 29
- 230000006872 improvement Effects 0.000 abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 22
- CTKINSOISVBQLD-UHFFFAOYSA-N Glycidol Chemical compound OCC1CO1 CTKINSOISVBQLD-UHFFFAOYSA-N 0.000 description 21
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 17
- 230000004048 modification Effects 0.000 description 15
- 238000012986 modification Methods 0.000 description 15
- -1 alkyl glycidyl ether Chemical compound 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 230000002776 aggregation Effects 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 239000011164 primary particle Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000004220 aggregation Methods 0.000 description 8
- 229910021529 ammonia Inorganic materials 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000011163 secondary particle Substances 0.000 description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- 239000008119 colloidal silica Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000005481 NMR spectroscopy Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 3
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002296 dynamic light scattering Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 238000004438 BET method Methods 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-ZSJDYOACSA-N Heavy water Chemical compound [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 229920002873 Polyethylenimine Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000001099 ammonium carbonate Substances 0.000 description 2
- 150000003868 ammonium compounds Chemical class 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 239000000413 hydrolysate Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- BBBUAWSVILPJLL-UHFFFAOYSA-N 2-(2-ethylhexoxymethyl)oxirane Chemical compound CCCCC(CC)COCC1CO1 BBBUAWSVILPJLL-UHFFFAOYSA-N 0.000 description 1
- LKMJVFRMDSNFRT-UHFFFAOYSA-N 2-(methoxymethyl)oxirane Chemical compound COCC1CO1 LKMJVFRMDSNFRT-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 description 1
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-O N-dimethylethanolamine Chemical compound C[NH+](C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-O 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 description 1
- 235000012538 ammonium bicarbonate Nutrition 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 230000009881 electrostatic interaction Effects 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- ZQXSMRAEXCEDJD-UHFFFAOYSA-N n-ethenylformamide Chemical compound C=CNC=O ZQXSMRAEXCEDJD-UHFFFAOYSA-N 0.000 description 1
- WGESLFUSXZBFQF-UHFFFAOYSA-N n-methyl-n-prop-2-enylprop-2-en-1-amine Chemical compound C=CCN(C)CC=C WGESLFUSXZBFQF-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229960005141 piperazine Drugs 0.000 description 1
- 229960003506 piperazine hexahydrate Drugs 0.000 description 1
- AVRVZRUEXIEGMP-UHFFFAOYSA-N piperazine;hexahydrate Chemical compound O.O.O.O.O.O.C1CNCCN1 AVRVZRUEXIEGMP-UHFFFAOYSA-N 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 238000000954 titration curve Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention provides a polishing composition for a silicon substrate, which can achieve both an improvement in polishing rate and storage stability of a concentrate. In one embodiment, the present invention relates to a polishing composition for a silicon substrate, which contains the following component a and the following component B, and has a pH of greater than 8.5 and 14 or less. Component A: silica particles; component B: an amino group-containing water-soluble polymer having a pKa of 5 to 8.5.
Description
Technical Field
The present invention relates to a polishing composition for a silicon substrate, a polishing method using the same, and a method for manufacturing a semiconductor substrate.
Background
As a polishing composition used for polishing a silicon substrate for manufacturing a semiconductor substrate, a polishing composition containing silica particles is known. In such a polishing composition, defects (LPD: light point defects, bright point defects) occur on the surface of the silicon substrate due to aggregation of silica particles, and clogging of a filter is a problem when the polishing composition is filtered to remove aggregates (for example, refer to japanese unexamined patent publication No. 2008-53415). Further, polishing liquid compositions containing a water-soluble polymer compound for improving the polishing rate are known (see JP-A2007-19093 and JP-A11-116942).
In japanese patent application laid-open No. 2008-53415, a polishing composition containing at least one water-soluble polymer selected from polyvinylpyrrolidone and poly-N-vinylformamide and a base is proposed in order to reduce LPD.
Japanese patent application laid-open No. 2007-19093 proposes a polishing composition containing a water-soluble polymer compound containing a nitrogen-containing group such as polyethyleneimine.
In Japanese patent application laid-open No. 11-116942, a polishing composition containing Hydroxyethylcellulose (HEC) is proposed in order to improve the polishing rate and the wettability of the surface of the object to be polished.
Disclosure of Invention
In one embodiment, the present invention relates to a polishing composition for a silicon substrate, which contains the following component a and the following component B, and has a pH of greater than 8.5 and 14 or less.
Component A: silica particles
Component B: amino group-containing water-soluble polymer having pKa of 5 to 8.5 inclusive
The present invention relates to a polishing method for a silicon substrate, which comprises a step of polishing a silicon substrate to be polished with the polishing composition of the present invention.
The present invention relates to a method for manufacturing a semiconductor substrate, including: polishing a silicon substrate to be polished with the polishing composition of the present invention; and a step of cleaning the polished silicon substrate.
Detailed Description
However, the polishing rate is not satisfactory for polishing using the polishing liquid composition of Japanese patent application laid-open No. 2008-53415.
When the polishing composition of JP-A2007-19093 is used, there is a problem that silica particles are aggregated by a water-soluble polymer compound containing a nitrogen-containing group, and the surface state of a silicon substrate such as scratches is deteriorated.
When the polishing composition containing HEC of japanese patent application laid-open No. 11-116942 is used, aggregates of silica particles are likely to be generated, and even if the polishing composition is filtered, clogging of the filter occurs immediately, so that there is a problem in that the polishing composition cannot be filtered immediately before polishing.
In general, the polishing composition is stored and transported in the form of a concentrate, and storage stability in the form of a concentrate is also required.
The invention provides a polishing liquid composition for silicon substrate, which can improve polishing speed and storage stability of concentrate, and a polishing method for silicon substrate and a manufacturing method for semiconductor substrate using the same.
The invention is based on the following insight: by using a polishing composition for a silicon substrate, which contains silica particles and an amino group-containing water-soluble polymer having a pKa of 5 to 8.5, and has a pH of more than 8.5 and 14, the silicon substrate can be polished at high speed, and the storage stability of the concentrate is excellent.
That is, the present invention relates to a polishing composition for a silicon substrate (hereinafter, also referred to as "polishing composition of the present invention") containing the following component a and the following component B, and having a pH of more than 8.5 and 14 or less.
Component A: silica particles
Component B: amino group-containing water-soluble polymer having pKa of 5 to 8.5 inclusive
According to one or more embodiments of the present invention, a polishing composition for a silicon substrate that can achieve both an improvement in polishing rate and storage stability of a concentrate can be provided.
The details of the effect expression mechanism of the present invention are not clear, but are presumed as follows.
Under alkaline polishing conditions with a pH value of more than 8.5 and less than 14, both the silicon dioxide abrasive particles and the silicon substrate to be polished have negative charges, and electrostatic repulsive force is always generated. In order to increase the polishing rate, it is effective to alleviate the electrostatic repulsive force, and the negative charges on both surfaces can be alleviated by the cationic substance, but in doing so, the following new problems arise: agglomeration of silica particles occurs, and the storage stability of the polishing composition, particularly the storage stability of the concentrate of the polishing composition, is lowered.
Accordingly, focusing on the water-soluble polymer having an amino group, it is considered that the water-soluble polymer having an amino group (component B) having a pKa smaller than the pH of the polishing composition has low cationicity, and is adsorbed to silica particles (component a) and a silicon substrate to be polished due to van der waals force of the whole molecule as a main factor, compared with electrostatic interaction with the amino group. Therefore, it is considered that the electrostatic repulsive force between the silica particles (component a) and the silicon substrate to be polished can be moderately relaxed, and the aggregation of the silica particles can be suppressed, thereby achieving both the improvement of the polishing rate and the storage stability.
However, the present invention is not limited to these mechanisms.
[ polished silicon substrate ]
The polishing composition of the present invention is a polishing composition for a silicon substrate, and is useful, for example, in a polishing step for polishing a silicon substrate to be polished in a method for producing a semiconductor substrate, or in a polishing step for polishing a silicon substrate to be polished in a method for polishing a silicon substrate. As a silicon substrate to be polished by using the polishing composition of the present invention, a silicon substrate or the like may be mentioned in one or more embodiments, and in one or more embodiments, a single crystal silicon substrate, a polycrystalline silicon substrate, a substrate having a polycrystalline silicon film, a SiN substrate or the like may be mentioned, and from the viewpoint of exerting the effect of the polishing composition of the present invention, a single crystal silicon substrate or a polycrystalline silicon substrate is preferable, and a single crystal silicon substrate is more preferable.
[ silica particles (component A) ]
The polishing composition of the present invention contains silica particles (hereinafter also referred to as "component a") as an abrasive. As component a, there may be mentioned: colloidal silica, fumed silica, crushed silica, silica obtained by modifying the surface of the above-mentioned silica, or the like; colloidal silica is preferred from the viewpoint of both the improvement of polishing rate and storage stability and the improvement of surface quality by reducing surface roughness (haze), surface defects, scratches, and the like. The component A may be 1 kind or 2 or more kinds.
The form of use of the component a is preferably a slurry form from the viewpoint of operability. In the case where the component a contained in the polishing composition of the present invention is colloidal silica, the colloidal silica is preferably colloidal silica obtained from a hydrolysate of an alkoxysilane in view of preventing contamination of a silicon substrate by an alkali metal, an alkaline earth metal, or the like. Silica particles obtained from a hydrolysate of an alkoxysilane can be produced by a conventionally known method.
The average primary particle diameter of the component a is preferably 10nm or more, more preferably 20nm or more, further preferably 30nm or more from the viewpoint of maintaining the polishing rate, and is preferably 50nm or less, more preferably 45nm or less, further preferably 40nm or less from the viewpoint of improving the storage stability and from the viewpoint of reducing surface roughness (haze), surface defects, scratches and the like and improving the surface quality. From the same viewpoint, the average primary particle diameter of the component A is preferably 10nm to 50nm, more preferably 20nm to 45nm, still more preferably 30nm to 40 nm.
In the present invention, the average primary particle diameter of the component A uses a specific surface area S (m) calculated by the nitrogen adsorption method (BET method) 2 /g). The average primary particle diameter value is a value measured by the method described in examples.
The average secondary particle diameter of the component a is preferably 20nm or more, more preferably 30nm or more, further preferably 40nm or more, further preferably 60nm or more from the viewpoint of maintaining the polishing rate, and is preferably 100nm or less, more preferably 90nm or less, further preferably 80nm or less from the viewpoint of improving the storage stability and from the viewpoint of reducing surface roughness (haze), surface defects, scratches and the like and improving the surface quality. From the same viewpoint, the average secondary particle diameter of the component A is preferably 20nm to 100nm, more preferably 40nm to 90nm, still more preferably 60nm to 80 nm.
In the present invention, the average secondary particle diameter is a value measured by a Dynamic Light Scattering (DLS) method, and is a value measured by the method described in examples.
The aggregation degree of the component a is preferably 3 or less, more preferably 2.5 or less, and further preferably 2.3 or less from the viewpoint of improving the storage stability and the viewpoint of improving the surface quality, and is preferably 1.1 or more, more preferably 1.5 or more, and further preferably 1.8 or more from the viewpoint of improving the polishing rate and the storage stability and the viewpoint of improving the surface quality.
In the present invention, the aggregation level of the component a is a coefficient indicating the shape of silica particles, and is calculated by the following formula.
Aggregation = average secondary particle diameter/average primary particle diameter
As a method for adjusting the degree of aggregation of component A, for example, the methods described in JP-A-6-254383, JP-A-11-214338, JP-A-11-60232, JP-A-2005-060217, JP-A-2005-060219 and the like can be used.
The shape of the component a is preferably a so-called ball shape and/or a so-called cocoon shape from the viewpoint of both the improvement of the polishing rate and the storage stability and the improvement of the surface quality.
From the viewpoint of improving the polishing rate, the content of component A in the polishing composition of the present invention is represented by SiO 2 The amount of the catalyst is preferably 0.01 mass% or more, more preferably 0.05 mass% or more, further preferably 0.07 mass% or more, and from the viewpoint of improving the storage stability and the surface quality, it is preferably 2.5 mass% or less, more preferably 1 mass% or less, further preferably 0.8 mass% or less. Therefore, the content of the component a in the polishing composition of the present invention is preferably 0.01 mass% or more and 2.5 mass% or less, more preferably 0.05 mass% or more and 1 mass% or less, and still more preferably 0.07 mass% or more and 0.8 mass% or less. When the component a is a combination of 2 or more, the content of the component a means the total content thereof.
In the case where the silicon substrate to be polished is a single crystal silicon substrate, the content of the component a in the polishing composition of the present invention is still more preferably 0.5 mass% or less, still more preferably 0.3 mass% or less, still more preferably 0.2 mass% or less, from the viewpoint of improving the storage stability and improving the surface quality. Accordingly, the content of the component a in the polishing composition of the present invention is still more preferably 0.07 mass% or more and 0.5 mass% or less, still more preferably 0.07 mass% or more and 0.3 mass% or less, still more preferably 0.07 mass% or more and 0.2 mass% or less.
In the case where the silicon substrate to be polished is a polysilicon substrate, the content of the component a in the polishing composition of the present invention is still more preferably 0.1 mass% or more, still more preferably 0.2 mass% or more, still more preferably 0.3 mass% or more, from the viewpoint of improving the polishing rate. Accordingly, the content of the component a in the polishing composition of the present invention is still more preferably 0.1 mass% or more and 0.8 mass% or less, still more preferably 0.2 mass% or more and 0.8 mass% or less, still more preferably 0.3 mass% or more and 0.8 mass% or less.
[ Water-soluble Polymer (component B) containing amino groups having a pKa of 5 to 8.5 inclusive ]
The polishing composition of the present invention contains an amino group-containing water-soluble polymer (hereinafter, also referred to as "component B") having a pKa of 5 or more and 8.5 or less. The component B is considered to be capable of adjusting Zeta potential of the silica particles (component a) and the silicon substrate to be polished, reducing electrostatic repulsive force between the silica particles (component a) and the silicon substrate to be polished, and suppressing aggregation of the silica particles. In the present invention, "water-soluble" means having a solubility of 0.5g/100mL or more, preferably 2g/100mL or more in water (20 ℃).
The pKa of the component B is 5 or more, preferably 5.5 or more, more preferably 5.9 or more, and even more preferably 6.3 or more from the viewpoint of improving the polishing rate, and is 8.5 or less, preferably 8.3 or less, more preferably 8.1 or less, and even more preferably 8 or less from the viewpoint of improving the surface quality.
In the case where component B is component B1 described below, the pKa of component B is more preferably 6.5 or more from the viewpoint of improving the polishing rate, and is more preferably 7.7 or less, more preferably 7.4 or less, and still more preferably 7.1 or less from the viewpoint of improving the surface quality.
In the case where component B is component B2 described below, the pKa of component B is more preferably 6.6 or more, still more preferably 6.9 or more, still more preferably 7.1 or more, from the viewpoint of improving the polishing rate, and is more preferably 7.8 or less, still more preferably 7.6 or less, still more preferably 7.4 or less, from the viewpoint of improving the surface quality.
As component B, it is preferable to include a structural unit derived from 1 or more monomers selected from allylamine and diallylamine from the viewpoint of improving the polishing rate and improving the storage stability. From the viewpoint of availability, in one or more embodiments, component B is preferably an amino group-containing water-soluble polymer containing a structural unit derived from allylamine (hereinafter, also referred to as "component B1"), and in one or more embodiments, component B is preferably an amino group-containing water-soluble polymer containing a structural unit derived from diallylamine (hereinafter, also referred to as "component B2").
( Component B1: amino group-containing water-soluble polymer comprising allylamine-derived structural unit )
In one or more embodiments, at least a part of the amino groups in the structural unit derived from allylamine preferably has a steric hindrance group from the viewpoint of both improvement of the polishing rate and storage stability and the viewpoint of availability. In the present invention, the steric hindrance group means a substituent capable of shielding the nitrogen atom of the amino group of the component B to inhibit cationization, i.e., to reduce the steric bulk (bulk) of pKa. From the same viewpoint, the amino group having a steric hindrance group is preferably a secondary amino group or a tertiary amino group containing a hydrocarbon group having 3 or more and 11 or less carbon atoms having a hydroxyl group. The carbon number of the hydrocarbon group is preferably 3 or more from the viewpoint of improving the shielding property of the amino group (suppressing cationization of the nitrogen atom of the amino group) and the viewpoint of improving the polishing rate and the storage stability, and is preferably 11 or less, more preferably 7 or less, still more preferably 5 or less, and still more preferably 4 or less from the viewpoint of improving the water solubility and the availability.
Amino groups having a sterically hindered group are in one or more embodiments modification groups to amino groups based on glycidyl derivatives, and in one or more embodiments groups derived from the reaction of amino groups in the structural units of allylamine with glycidyl derivatives. At least a part of all amino groups of the component B1 is modified by a glycidyl derivative to be amino groups having a steric hindrance group. The equivalent weight (hereinafter also referred to as "glycidol modification ratio") of the glycidol derivative to the number of amino groups (1 equivalent) in the structural unit derived from allylamine is preferably 0.3 or more, more preferably 0.5 or more, further preferably 0.8 or more, further preferably 1 or more, preferably more than 1.1, more preferably 1.2 or more, further preferably 1.3 or more, further preferably 1.4 or more, further preferably 1.5 or more, and the polishing rate is preferably 4 or less, more preferably 3 or less, further preferably 2.5 or less, further preferably 2 or less, further preferably 1.9 or less, further preferably 1.6 or less, from the viewpoint of improving the storage stability and the surface quality.
In the present invention, the glycidol modification ratio is used 13 C-NMR (nuclear magnetic resonance ) and values measured by the methods described in the examples. However, the glycidol modification ratio can also be measured by the following method (1) or (2).
(1) The amino equivalent of the allylamine polymer used as the reaction raw material and the molar number of the glycidyl derivative can be determined.
(2) The nitrogen content N (mass%) of the reaction product of the glycidyl derivative and the allylamine polymer can be determined and found according to the following formula.
Glycidol modification ratio=a/B
Here, a= (molecular weight of 100-n×allylamine monomer/14)/glycidyl derivative molecular weight, b=n/14.
Examples of the glycidyl derivative include glycidol and alkyl glycidyl ether, and from the viewpoint of availability and the viewpoint of both improvement of the polishing rate and storage stability, glycidol is preferable. The alkyl group of the alkyl glycidyl ether is preferably an alkyl group having 1 to 8 carbon atoms from the viewpoint of availability, and examples thereof include methyl, ethyl, propyl, butyl, and 2-ethylhexyl groups. Specific examples of the alkyl glycidyl ether include methyl glycidyl ether and 2-ethylhexyl glycidyl ether.
As component B1, in one or more embodiments, polyallylamine having at least a part of the amino groups with steric hindrance groups may be exemplified, and in one or more embodiments, the reaction product of polyallylamine and a glycidyl derivative may be exemplified.
In one or more embodiments, the component B1 is, for example, a compound (glycidol-modified polyallylamine) containing a structural unit of the following formula (I).
[ chemical formula 1]
In the formula (I), R 1 R is R 2 A hydrogen atom or a sterically hindered group, respectively. Examples of the steric hindrance group include a modification group derived from a glycidyl derivative, and in one or more embodiments, 1 mol adduct or 2 mol adduct of glycidyl, and in one or more embodiments, may include-CH 2 CH(OH)CH 2 (OH)、-CH 2 CH(OH)CH 2 O-CH 2 CH(OH)CH 2 (OH) and the like.
( Component B2: amino group-containing water-soluble polymer comprising diallylamine-derived structural unit )
In one or more embodiments, at least a part of the amino groups in the structural units derived from diallylamine preferably have an electron withdrawing group at the β -or γ -position of the amino group, from the viewpoint of both improvement of the polishing rate and storage stability. Examples of the electron withdrawing group include a group represented by the following formula (II).
[ chemical formula 2]
In one or more embodiments, the component B2 may be a compound including a structural unit derived from diallylamine and a structural unit derived from sulfur dioxide, for example, a compound including a structural unit represented by the following formula (III).
[ chemical formula 3]
In the formula (III), R 3 Is an alkyl group having 1 to 3 carbon atoms optionally having a hydroxyl group. From the viewpoint of availability and economy, R 3 Preferably methyl. N+m=1, and n and m are 0 or 1. From the same point of view, a compound in which m=1 and n=0 is preferable. It is to be noted that a mixture of a compound in which m=1 and n=0 and a compound in which m=0 and n=1 may be used.
In one or more embodiments, the component B2 may be a compound including a structural unit represented by the following formula (IV), for example, a methyldiallylamine/sulfur dioxide copolymer.
[ chemical formula 4]
The weight average molecular weight of the component B is preferably 800 or more, more preferably 1,000 or more, further preferably 1,500 or more, further preferably 2,000 or more from the viewpoint of improving the polishing rate, and is preferably 100,000 or less, more preferably 50,000 or less, further preferably 30,000 or less, further preferably 20,000 or less, further preferably 15,000 or less, further preferably 12,000 or less from the viewpoint of both improving the polishing rate and the storage stability and reducing the surface roughness and the surface defects. The weight average molecular weight of component B in the present invention can be measured, for example, by the method described in examples.
In the case where component B is component B1, the weight average molecular weight of component B is preferably 800 or more, more preferably 1,000 or more, still more preferably 1,500 or more, still more preferably 2,000 or more, preferably 3,000 or more, still more preferably 5,000 or more, still more preferably 6,000 or more, still more preferably 7,000 or more, from the viewpoint of improving the polishing rate and the storage stability, and from the viewpoint of reducing the surface roughness and the surface defects, it is preferably 100,000 or less, more preferably 50,000 or less, still more preferably 30,000 or less, still more preferably 20,000 or less, still more preferably 15,000 or less, still more preferably 12,000 or less, and still more preferably 10,000 or less.
When component B is component B2, the weight average molecular weight of component B is preferably 800 or more, more preferably 1,000 or more, still more preferably 1,500 or more, still more preferably 2,000 or more, from the viewpoint of improving the polishing rate and the storage stability, and from the viewpoint of reducing the surface roughness and surface defects, it is preferably 100,000 or less, more preferably 50,000 or less, still more preferably 30,000 or less, still more preferably 20,000 or less, still more preferably 15,000 or less, still more preferably 12,000 or less, still more preferably 10,000 or less, still more preferably 7,000 or less, still more preferably 5,000 or less, and still more preferably 4,000 or less.
The content of component B in the polishing composition of the present invention is preferably 10 mass ppm or more, more preferably 20 mass ppm or more, further preferably 30 mass ppm or more, from the viewpoint of both improvement of the polishing rate and storage stability, and is preferably 200 mass ppm or less, more preferably 150 mass ppm or less, further preferably 120 mass ppm or less, from the same viewpoint. In the present invention, 1 mass% is 10,000 mass ppm (the same applies hereinafter).
The ratio of the content of component B to the content of component a (mass ratio B/a) in the polishing composition of the present invention is preferably 0.008 or more, more preferably 0.016 or more, further preferably 0.025 or more, and from the viewpoint of improving the polishing rate, preferably 0.16 or less, more preferably 0.12 or less, further preferably 0.09 or less.
[ Water ]
In one or more embodiments, the polishing composition of the present invention may also comprise water. Examples of the water include ion-exchanged water and ultrapure water. The water content in the polishing composition of the present invention may be, for example, the balance of component a, component B, and any of the following components.
[ Nitrogen-containing basic Compound (component C) ]
In one or more embodiments, the polishing composition of the present invention preferably further contains a nitrogen-containing basic compound (hereinafter, also referred to as "component C") from the viewpoint of adjusting the pH. As component C, a water-soluble nitrogen-containing basic compound is preferable from the viewpoint of both the improvement of the polishing rate and the storage stability and the improvement of the surface quality. In the present invention, "water-soluble" means having a solubility of 0.5g/100mL or more, preferably 2g/100mL or more in water (20 ℃). In the present invention, the term "water-soluble nitrogen-containing basic" means a nitrogen-containing compound which exhibits basicity when dissolved in water. In one or more embodiments, the component C is not composed of a water-soluble polymer containing an amino group (component B). The component C may be 1 or a combination of 2 or more.
As component C, in one or more embodiments, at least 1 selected from the group consisting of amine compounds and ammonium compounds may be mentioned. Examples of the component C include 1 or 2 or more kinds selected from ammonia, ammonium hydroxide, ammonium carbonate, ammonium bicarbonate, dimethylamine, trimethylamine, diethylamine, triethylamine, monoethanolamine, diethanolamine, triethanolamine, N-methylethanolamine, N-methyl-N, N-diethanolamine, N-dimethylethanolamine, N-diethylethanolamine, N-dibutylethanolamine, N- (. Beta. -aminoethyl) ethanolamine, monoisopropanolamine, triisopropanolamine, ethylenediamine, hexamethylenediamine, piperazine hexahydrate, anhydrous piperazine, 1- (2-aminoethyl) piperazine, N-methylpiperazine, diethylenetriamine, tetramethylammonium hydroxide, and hydroxylamine. Among them, ammonia or a mixture of ammonia and hydroxylamine is preferable as component C, and ammonia is more preferable from the viewpoint of improving the polishing rate and the storage stability.
When the polishing composition of the present invention contains component C, the content of component C in the polishing composition of the present invention is preferably 5 mass ppm or more, more preferably 10 mass ppm or more, still more preferably 20 mass ppm or more, from the viewpoint of improving the storage stability, from the viewpoint of improving the surface quality, and from the viewpoint of suppressing corrosion of the silicon substrate, preferably 500 mass ppm or less, more preferably 300 mass ppm or less, still more preferably 150 mass ppm or less, and still more preferably 100 mass ppm or less, from the viewpoint of improving the polishing rate. From the same viewpoint, the content of component C in the polishing composition of the present invention is preferably 5 mass ppm or more and 500 mass ppm or less, more preferably 10 mass ppm or more and 300 mass ppm or less, still more preferably 20 mass ppm or more and 150 mass ppm or less, and still more preferably 20 mass ppm or more and 100 mass ppm or less. When the component C is a combination of 2 or more, the content of the component C means the total content thereof.
When the polishing composition of the present invention contains component C, the ratio C/a (mass ratio C/a) of the content of component C to the content of component a in the polishing composition of the present invention is preferably 0.002 or more, more preferably 0.01 or more, still more preferably 0.015 or more, still more preferably 0.025 or more, and is preferably 1 or less, more preferably 0.5 or less, still more preferably 0.1 or less, still more preferably 0.08 or less, from the viewpoint of improving the storage stability, the viewpoint of improving the surface quality, and the viewpoint of inhibiting the corrosion of the silicon substrate, in terms of improving the polishing rate. From the same viewpoint, the mass ratio C/a in the polishing composition of the present invention is preferably 0.002 or more and 1 or less, more preferably 0.01 or more and 0.5 or less, still more preferably 0.015 or more and 0.1 or less, and still more preferably 0.025 or more and 0.08 or less.
[ other Components ]
The polishing composition of the present invention may further contain other components within a range that does not impair the effects of the present invention. Examples of the other components include water-soluble polymers other than component B, pH adjusters other than component C, preservatives, alcohols, chelating agents, and oxidizing agents in one or more embodiments.
[ pH value ]
The pH of the polishing composition of the present invention is preferably 9 or more, more preferably 9.5 or more, more preferably 10 or more, in terms of both improvement of the polishing rate and storage stability, and is 14 or less, preferably 13 or less, more preferably 12.5 or less, more preferably 12 or less, more preferably 11.5 or less, more preferably 11 or less, in terms of improvement of the surface quality. From the same viewpoint, the pH of the polishing composition of the present invention is greater than 8.5 and 14 or less, more preferably 9 or more and 13 or less, still more preferably 9 or more and 12.5 or less, still more preferably 9 or more and 12 or less, still more preferably 9.5 or more and 11.5 or less, still more preferably 10 or more and 11 or less. The pH of the polishing composition of the present invention can be adjusted using component C and a known pH adjuster. In the present invention, the pH is measured by the method described in examples.
[pH－pKa]
From the viewpoint of both the improvement of the polishing rate and the storage stability and the improvement of the surface quality, the pH of the polishing composition of the present invention is preferably greater than the pKa of component B. Specifically, from the viewpoint of improving the polishing rate and the storage stability, the difference between the pH and pKa (pH-pKa) is preferably greater than 0, more preferably 0.5 or more, more preferably 1 or more, more preferably 1.5 or more, more preferably 2 or more, more preferably 2.5 or more, and from the viewpoint of improving the surface quality, it is preferably 7 or less, more preferably 6 or less, more preferably 5.5 or less, more preferably 5 or less, more preferably 4.5 or less, more preferably 4 or less, more preferably 3.5 or less.
The polishing composition of the present invention can be produced, for example, by blending component a and component B, and further, if necessary, water, component C, and other components by a known method. That is, the polishing composition of the present invention can be produced by blending at least the component a and the component B. Accordingly, the present invention relates to a method for producing a polishing composition, which comprises a step of blending at least a component a and a component B. In the present invention, "mixing" includes mixing the component a, the component B, and if necessary, the water, the component C, and other components simultaneously or in any order. The above-mentioned blending can be performed using, for example, a homogenizing mixer, a homogenizer, an ultrasonic disperser, a wet ball mill, a bead mill, or the like. The preferable blending amount of each component in the method for producing a polishing composition of the present invention may be the same as the preferable content of each component in the polishing composition of the present invention.
In the present invention, the "content of each component in the polishing composition" refers to the content of each component at the time of use, that is, at the time of starting to use the polishing composition for polishing.
From the standpoint of storage and transportation, the polishing composition of the invention can be manufactured as a concentrate and diluted at the time of use. The dilution ratio is preferably 2 times or more, more preferably 10 times or more, further preferably 30 times or more, further preferably 50 times or more, from the viewpoint of manufacturing and transportation costs and from the viewpoint of storage stability, and is preferably 180 times or less, more preferably 140 times or less, further preferably 100 times or less, further preferably 70 times or less, from the viewpoint of storage stability. The concentrate of the polishing composition of the present invention can be used after being diluted with water so that the content of each component becomes the above-mentioned content (i.e., the content in the case of use). In the present invention, the term "in use" of the concentrate of the polishing composition means a state in which the concentrate of the polishing composition is diluted.
[ polishing liquid kit ]
In another aspect, the present invention relates to a polishing composition kit (hereinafter, also referred to as "the kit of the present invention") for use in producing the polishing composition of the present invention. According to the kit of the present invention, a polishing composition that can achieve both an improvement in polishing rate and storage stability of a concentrate can be obtained.
In one or more embodiments, the polishing slurry kit including a solution containing component a, component B, and component C is exemplified as the kit of the present invention. The solution may contain the other components as required. The above solution may be diluted with water as needed when used.
[ polishing method for silicon substrate ]
In another aspect, the present invention relates to a method for polishing a silicon substrate (hereinafter, also referred to as "the polishing method of the present invention"), which comprises a step of polishing a silicon substrate to be polished (hereinafter, also referred to as "the polishing step") using the polishing composition of the present invention. According to the polishing method of the present invention, since the polishing composition of the present invention is used, both an improvement in polishing rate and an improvement in surface quality can be achieved.
In the polishing step in the polishing method of the present invention, for example, the silicon substrate to be polished is pressed against a platen to which a polishing pad is attached, and the silicon substrate to be polished is polished at a polishing pressure of 3 to 20 kPa. In the present invention, the polishing pressure means a pressure applied to a platen of a polished surface of a silicon substrate to be polished at the time of polishing.
In the polishing step in the polishing method of the present invention, for example, the silicon substrate to be polished is pressed against a platen to which a polishing pad is attached, and the silicon substrate to be polished is polished at a temperature of 15 ℃ to 40 ℃. The temperature of the polishing composition and the surface temperature of the polishing pad are preferably 15 ℃ or more or 20 ℃ or more, and more preferably 40 ℃ or less or 30 ℃ or less, from the viewpoint of improving the polishing rate and reducing the surface quality such as surface roughness (haze).
[ method for manufacturing semiconductor substrate ]
Another aspect of the present invention relates to a method for manufacturing a semiconductor substrate (hereinafter, also referred to as "the method for manufacturing a semiconductor substrate of the present invention"), comprising: a step of polishing a silicon substrate to be polished using the polishing composition of the present invention (hereinafter, also referred to as "polishing step"); and a step of cleaning the polished silicon substrate (hereinafter, also referred to as "cleaning step"). According to the method for producing a semiconductor substrate of the present invention, by using the polishing composition of the present invention, both the improvement in polishing rate and the storage stability of the concentrate can be achieved, and therefore, a high-quality semiconductor substrate can be produced with high productivity and at low cost.
The polishing step in the method for manufacturing a semiconductor substrate of the present invention may include, for example: a grinding (rough polishing) step of planarizing a single crystal silicon substrate obtained by cutting a single crystal silicon ingot into a thin disk shape; and a finish polishing step of polishing the silicon substrate after etching the ground single crystal, thereby mirror-polishing the surface of the single crystal silicon substrate. The polishing composition of the present invention is more preferably used in the finish polishing step from the viewpoint of both improvement in polishing rate and improvement in surface quality.
The polishing step in the method for manufacturing a semiconductor substrate of the present invention may include, for example: a step of removing and planarizing irregularities of a polysilicon film on a silicon substrate having a silicon oxide film and a silicon nitride film by a Chemical Vapor Deposition (CVD) method; and a step of polishing the silicon oxide film and the silicon nitride film directly below and the polysilicon film simultaneously to planarize them. In view of both the improvement of the polishing rate and the improvement of the surface quality, the polishing composition of the present invention is more preferably used in a step of removing the irregularities of the polysilicon film and planarizing the same.
The polishing step in the method for producing a semiconductor substrate of the present invention may be performed under the same conditions (polishing pressure, polishing liquid composition, surface temperature of polishing pad, etc.) as in the polishing step in the method for producing a semiconductor substrate of the present invention described above.
In one or more embodiments, the method for producing a semiconductor substrate according to the present invention may further include a dilution step of diluting the concentrate of the polishing composition according to the present invention before the polishing step. The diluting medium may be, for example, water.
In the cleaning step in the method for manufacturing a semiconductor substrate of the present invention, it is preferable to perform inorganic cleaning in view of reducing the residue on the surface of the silicon substrate. Examples of the cleaning agent used for cleaning the inorganic substance include inorganic cleaning agents containing at least 1 selected from hydrogen peroxide, ammonia, hydrochloric acid, sulfuric acid, hydrofluoric acid and ozone water.
In one or more embodiments of the method for manufacturing a semiconductor substrate according to the present invention, the method may further include a step of washing the washed silicon substrate with water and drying the washed silicon substrate after the washing step.
The invention also relates to one or more of the following embodiments.
< 1 > a polishing composition for silicon substrates comprising the following component A and the following component B, wherein the pH is more than 8.5, preferably 9 or more, more preferably 9.5 or more, still more preferably 10 or more, and 14 or less, preferably 13 or less, more preferably 12.5 or less, more preferably 12 or less, still more preferably 11.5 or less, still more preferably 11 or less.
Component A: silica particles
Component B: an amino group-containing water-soluble polymer having a pKa of 5 or more, preferably 5.5 or more, more preferably 5.9 or more, more preferably 6.3 or more and 8.5 or less, preferably 8.3 or less, more preferably 8.1 or less, more preferably 8 or less
The polishing composition of < 2 > as described in < 1 > has a difference between pH and pKa (pH-pKa) of more than 0, preferably 0.5 or more, more preferably 1 or more, still more preferably 1.5 or more, still more preferably 2 or more, still more preferably 2.5 or more, and 7 or less, preferably 6 or less, still more preferably 5.5 or less, still more preferably 5 or less, still more preferably 4.5 or less, still more preferably 4 or less, and still more preferably 3.5 or less.
The polishing composition of < 3 > as defined in < 1 > or < 2 >, wherein component B contains a structural unit derived from 1 or more monomers selected from allylamine and diallylamine, preferably diallylamine.
The polishing composition according to claim 4 < 3, wherein at least a part of amino groups in the structural unit derived from allylamine has a steric hindrance.
The polishing composition of < 5 > as defined in < 3 > or < 4 >, wherein at least a part of the amino groups in the structural unit derived from allylamine are secondary amino groups or tertiary amino groups containing a hydrocarbon group having 3 to 11 carbon atoms inclusive having a hydroxyl group.
< 6 > the polishing composition as claimed in any one of < 1 > to < 5 >, wherein component B is a reaction product of polyallylamine and a glycidyl derivative, preferably a glycidylmodified polyallylamine.
The polishing composition of < 7 > as defined in < 3 >, wherein at least a part of the amino groups in the structural unit derived from diallylamine has an electron-withdrawing group at the β -or γ -position, preferably a group represented by the following formula (II).
[ chemical formula 5]
The polishing composition according to any one of < 8 > to < 1 > to < 7 >, wherein component B is a compound comprising a structural unit represented by the following formula (III).
[ chemical formula 6]
In the formula (III), R 3 Is an alkyl group having 1 to 3 carbon atoms optionally having a hydroxyl group, preferably a methyl group, n+m=1, preferably m=1 and n=0.
The polishing composition of any one of < 9 > to < 1 > to < 8 >, wherein the ratio of the content of component B to the content of component a (mass ratio B/a) in the polishing composition of the present invention is 0.008 or more, preferably 0.016 or more, more preferably 0.025 or more, and 0.16 or less, preferably 0.12 or less, more preferably 0.09 or less.
The polishing composition of any one of < 10 > to < 1 > to < 9 >, wherein the polishing composition of the invention comprises a nitrogen-containing basic compound (component C), preferably comprises a water-soluble nitrogen-containing basic compound, more preferably comprises at least 1 selected from an amine compound and an ammonium compound, and further preferably comprises ammonia.
In the case where the polishing composition of the present invention contains component C, the ratio C/A (mass ratio C/A) of the content of component C to the content of component A in the polishing composition of the present invention is 0.002 or more, preferably 0.01 or more, more preferably 0.015 or more, still more preferably 0.025 or more, and 1 or less, preferably 0.5 or less, more preferably 0.1 or less, still more preferably 0.08 or less.
A polishing method for a silicon substrate comprising the step of polishing a silicon substrate to be polished with the polishing composition according to any one of < 1 > to < 11 >.
The polishing method according to claim 13 < 12, wherein the silicon substrate to be polished is a single crystal silicon substrate or a polycrystalline silicon substrate, preferably a single crystal silicon substrate.
A method for manufacturing a semiconductor substrate, comprising: a step of polishing a silicon substrate to be polished with the polishing composition according to any one of < 1 > to < 11 >; a kind of electronic device with high-pressure air-conditioning system
And cleaning the polished silicon substrate.
Examples (example)
The present invention will be described in further detail with reference to examples, but these are illustrative examples, and the present invention is not limited to these examples.
1. Preparation of polishing composition
(concentrate of polishing composition)
Silica particles (component a) shown in tables 1 to 2, water-soluble polymer (component B or non-component B) shown in tables 1 to 2, ammonia (component C), and ultrapure water were stirred and mixed to obtain a concentrate (60-fold) of the polishing composition. The pH value of the concentrate at 25 ℃ is 10.6-11.0.
(polishing composition)
The above concentrate was diluted 60 times with ion-exchanged water to obtain polishing liquid compositions of examples 1 to 9 and comparative examples 1 to 3. The content of each component in tables 1 and 2 is the content (mass% or mass ppm, active ingredient) of each component at the time of use of the diluted polishing composition. The content of ultrapure water is the balance excluding the component A, the component B or the non-component B and the component C. The pH at 25℃of each polishing composition (at the time of use) was 10.3.
The pH at 25℃is a value measured by a pH meter (HM-30G, tokyo electric wave Co., ltd.) and is obtained by immersing an electrode of the pH meter in the polishing composition or its concentrate for 1 minute.
The following components are used as the component a, the component B, the non-component B and the component C for preparing each polishing composition.
(component A)
Colloidal silica [ average primary particle size 35nm, average secondary particle size 70nm, aggregation degree 2.0]
(component B)
B1: methyldiallylamine-Sulfur dioxide copolymer [ manufactured by Nittobo Medical Co., ltd., PAS-2201, weight average molecular weight 3,000]
B2: glycidol modified polyallylamine (glycidol modification ratio: 2.0) [ weight average molecular weight 11,000 manufactured by Nittobo Medical Co., ltd.)
B3: glycidol modified polyallylamine (glycidol modification ratio: 1.8) [ weight average molecular weight 10,200 manufactured by Nittobo Medical Co., ltd.)
B4: glycidol modified polyallylamine (glycidol modification ratio: 1.5) [ weight average molecular weight 8,900 manufactured by Nittobo Medical Co., ltd.)
B5: glycidol modified polyallylamine (glycidol modification ratio: 1.0) [ weight average molecular weight 6,900 manufactured by Nittobo Medical Co., ltd.)
(non-component B)
B6: allylamine (free) Polymer [ Nittobo Medical PAA-03, weight average molecular weight 3,000]
B7: polyethyleneimine (manufactured by Japanese catalyst Co., ltd., SP-200, weight average molecular weight 10,000)
(component C)
Ammonia [28 mass% aqueous ammonia, manufactured by Shore chemical Co., ltd., special grade reagent ]
2. Method for measuring various parameters
(1) Measurement of average Primary particle diameter of silica particles (component A)
The average primary particle diameter (nm) of component A was determined by using the specific surface area S (m) calculated by the BET (nitrogen adsorption) method 2 And/g) is calculated by the following formula.
Average primary particle diameter (nm) =2727/S
After the following [ pretreatment ], the measurement sample was accurately weighed at about 0.1g to 4 positions below the decimal point and placed in a measurement unit, and immediately before the specific surface area was measured, the sample was dried under an atmosphere at 110℃for 30 minutes, and then the specific surface area S of the component A was measured by a nitrogen adsorption method (BET method) using a specific surface area measuring apparatus (Micromeritics automatic specific surface area measuring apparatus "Flowsorb III2305", manufactured by Shimadzu corporation).
[ pretreatment ]
(a) The pH of the slurry-like component A was adjusted to 2.5.+ -. 0.1 by means of an aqueous nitric acid solution.
(b) The slurry-like component A having a pH of 2.5.+ -. 0.1 was collected in a dish and dried in a hot air dryer at 150℃for 1 hour.
(c) After drying, the obtained sample was finely pulverized with an agate mortar.
(d) The crushed sample was suspended in ion-exchanged water at 40℃and filtered by a membrane filter having a pore size of 1. Mu.m.
(e) The filtrate on the filter was washed 5 times with 20g of ion-exchanged water (40 ℃ C.).
(f) The filter with the attached filter was taken into a petri dish and allowed to dry for 4 hours under an atmosphere of 110 ℃.
(g) The dried filtrate (component a) was taken out without mixing with filter chips, and finely pulverized with a mortar to obtain a measurement sample.
(2) Average secondary particle diameter of silica particles (component A)
After adding the abrasive to ion-exchanged water so that the concentration of the component A became 0.25 mass%, the obtained aqueous dispersion was added to Disposable Sizing Cuvette (10 mm unit made of polystyrene) until the height from the bottom became 10mm, and the average secondary particle diameter (nm) of the component A was measured by a dynamic light scattering method (device name: "Zetasizer Nano ZS", manufactured by Sysmex corporation).
(3) Determination of weight average molecular weight of Water-soluble Polymer
The weight average molecular weight of the water-soluble polymer (component B, non-component B) was calculated based on peaks in a chromatogram obtained by applying a Gel Permeation Chromatography (GPC) method under the following conditions.
< measurement conditions of Water-soluble Polymer >
The device comprises: HLC-8320GPC (Tosoh Co., ltd., detector integrated)
Column: alpha-M+alpha-M
Eluent: 0.15mol/L Na 2 SO 4 ，1％CH 3 COOH/water
Flow rate: 1.0mL/min
Column temperature: 40 DEG C
A detector: shodex RI SE-61 differential refraction detector
Standard substance: monodisperse polyethylene glycols of known molecular weight
(4) Determination of pKa
Potential difference titration was performed with respect to an aqueous solution of component B adjusted to 1M by using an HM-41K type pH meter (manufactured by Toyama DKK Co., ltd.) with 0.1M-hydrochloric acid at room temperature. pKa was calculated from the obtained titration curve.
(5) Glycidol modification ratio
Glycidyl modification rate use 13 C-NMR.
< measurement Condition >
Sample: 200mg of glycidol-modified polyallylamine was dissolved in 0.6mL of heavy water
The using device comprises: 400MHz 13 C-NMR (Agilent 400-MR DD2 manufactured by Agilent technologies Co., ltd.)
Measurement conditions: 13 C-NMr measurement, pulse Interval time of 5 seconds, measurement of tetramethylsilane as a standard peak (σ:0.0 ppm)
Cumulative number of times: 5000 times
Peak ranges for integration:
a:71.0 to 72.3ppm (integral value of peak of C bonded with secondary hydroxyl group of glycidol after reaction with amino group)
B:32.0 to 41.0ppm (integral value of peaks of backbone C of allylamine)
< glycidol modification Rate >)
The glycidol modification ratio (the ratio of the equivalent amount of glycidol to the equivalent amount of amino group) was determined by the following formula.
Glycidol modification ratio (equivalent ratio) =2a/B
3. Evaluation of polishing compositions of examples 1 to 7 and comparative examples 1 to 2
(1) Polishing method and the like
Each polishing composition was filtered by a filter (miniaturized filter cartridge "MCP-LX-C10S", manufactured by Advantech corporation) immediately before polishing, and the silicon substrate described below was subjected to finish polishing and cleaning under the following polishing conditions.
< polished silicon substrate >)
Monocrystalline silicon substrate [ silicon single-sided mirror substrate with diameter of 200mm, conductivity type: p, crystal orientation: 100. resistivity: 0.1 Ω & cm or more and less than 100 Ω & cm ]
The single crystal silicon substrate was subjected to rough polishing in advance using a commercially available polishing composition (manufactured by Fujimi Incorporated, GLANZOX 1302). The haze of the single crystal silicon substrate subjected to rough polishing and finish polishing is 2 to 3ppm.
< finishing conditions >
Grinding machine: single-sided 8 inch grinder "GRIND-X SPP600s" (manufactured by Gangen work)
Polishing pad: suede pad (manufactured by Toray Coatex Co., ltd., ASKER hardness: 64, thickness: 1.37mm, hair length: 450 μm, opening diameter: 60 μm)
Silicon substrate polishing pressure: 100g/cm 2
Platen rotational speed: 60rpm
Grinding time: for 5 minutes
Feed rate of polishing composition: 150g/min
Temperature of the polishing composition: 23 DEG C
Carrier rotation speed: 62rpm
Measurement of surface roughness (haze) of silicon substrate
Values (DWO haze) in a dark-field wide oblique incidence channel (DWO) measured using a surface roughness measuring device "Surfscan SP1-DLS" (manufactured by KLA Tencor corporation) were used.
< cleaning method >)
After finish polishing, the silicon substrate was subjected to ozone cleaning and dilute hydrofluoric acid cleaning in the following manner. In the ozone cleaning, an aqueous solution containing 20ppm of ozone was sprayed from a nozzle at a flow rate of 1L/min toward the center of a silicon substrate rotated at 600rpm for 3 minutes. At this time, the temperature of the ozone water was set to normal temperature. Then dilute hydrofluoric acid cleaning is carried out. In the dilute hydrofluoric acid cleaning, an aqueous solution containing 0.5 mass% of ammonium bifluoride (superfine, nacalai Tesque Co.) was sprayed from a nozzle at a flow rate of 1L/min toward the center of a silicon substrate rotated at 600rpm for 6 seconds. The ozone cleaning and dilute hydrofluoric acid cleaning are taken as 1 group, 2 groups are performed in total, and finally rotary drying is performed. The silicon substrate was rotated at 1,500rpm in spin drying.
(2) Evaluation of polishing Rate
The weight of each silicon substrate before and after polishing was measured using a precision balance (manufactured by Sartorius corporation, "BP-210S"), and the obtained weight difference was divided by the density, area, and polishing time of the silicon substrate to determine the single-sided polishing rate per unit time. The results are shown in table 1. The weight of the polished silicon substrate is the weight of the silicon substrate after the above-described finish polishing and cleaning.
(3) Evaluation of storage stability of concentrate
100g of each concentrate of the polishing composition was placed in a 100ml spiral tube and sealed, and the storage stability after 1 day was evaluated on the basis of the following evaluation. The concentrate of the polishing composition was stored in a room at 23 ℃. The results are shown in table 1.
< evaluation criterion >
A: the concentrate of the polishing composition was prepared without generating aggregates and separation after 1 day, and maintained dispersion stability.
B: the concentrate of the polishing composition was prepared to slightly produce aggregates and separated after 1 day.
C: the concentrate of the polishing composition was prepared to produce a condensate and separated after 1 day.
TABLE 1
As shown in table 1, it was found that the polishing compositions of examples 1 to 7 were improved in polishing rate and also improved in storage stability of the concentrate, compared with the polishing compositions of comparative examples 1 to 2.
4. Evaluation of polishing compositions of examples 8 to 9 and comparative example 3
(1) Grinding method
Each polishing composition was filtered by a filter (miniaturized filter cartridge "MCP-LX-C10S", manufactured by Advantech corporation) immediately before polishing, and the silicon substrate described below was polished under the same polishing conditions as in (1) above, and then cleaned by the same cleaning method as in (1) above.
< polished silicon substrate >)
Polysilicon substrate [ SiO by plasma CVD method ] 2 Film and method for producing the same
Deposited on a silicon single-sided mirror substrate (conductivity: P, crystal orientation: 100, resistivity: 0.1 Ω & cm or more and less than 100 Ω & cm) having a diameter of 200mm, and then a polysilicon film is formed by a plasma CVD method>
Depositing the resulting substrate]
(2) Evaluation of polishing Rate
The polishing rate of the substrate to be polished was evaluated by using the polysilicon substrate in the same manner as in (2) above. The results are shown in table 2.
(3) Evaluation of storage stability of concentrate
The storage stability of the concentrate was evaluated in the same manner as in (3) above. The results are shown in table 2.
TABLE 2
As shown in table 2, it is clear that the polishing compositions of examples 8 to 9 are superior to the polishing composition of comparative example 3 in both improvement of polishing rate and preservation stability of the concentrate.
Industrial applicability
When the polishing composition of the present invention is used, both the improvement of polishing rate and the storage stability can be achieved. Therefore, the polishing composition of the present invention is useful as a polishing composition used in various semiconductor substrate manufacturing processes, in particular, as a polishing composition for finish polishing of a silicon substrate.
Claims (10)
1. A polishing composition for a silicon substrate comprising the following component A and the following component B, having a pH of more than 8.5 and 14 or less,
component A: the silica particles are used as a base material for the silica particles,
component B: an amino group-containing water-soluble polymer having a pKa of 5 to 8.5.
2. The polishing composition according to claim 1, wherein component B comprises a structural unit derived from 1 or more monomers selected from the group consisting of allylamine and diallylamine.
3. The polishing composition according to claim 2, wherein at least a part of amino groups in the structural unit derived from allylamine has a steric group.
4. The polishing composition according to claim 2 or 3, wherein at least a part of the amino groups in the structural unit derived from allylamine are secondary amino groups or tertiary amino groups containing a hydrocarbon group having 3 to 11 carbon atoms inclusive and having a hydroxyl group.
5. The polishing composition according to any one of claims 1 to 4, wherein component B is a reaction product of polyallylamine and a glycidyl derivative.
6. The polishing composition according to claim 2, wherein at least a part of amino groups in the structural unit derived from diallylamine has an electron-withdrawing group at β -position or γ -position.
7. The polishing composition according to claim 1, 2 or 6, wherein component B is a compound comprising a structural unit represented by the following formula (III),
in the formula (III), R 3 Is an alkyl group having 1 to 3 carbon atoms optionally having a hydroxyl group, and n+m=1.
8. A polishing method for a silicon substrate, comprising the step of polishing a silicon substrate to be polished with the polishing composition according to any one of claims 1 to 7.
9. The polishing method according to claim 8, wherein the silicon substrate to be polished is a single crystal silicon substrate or a polycrystalline silicon substrate.
10. A method of manufacturing a semiconductor substrate, comprising:
a step of polishing a silicon substrate to be polished using the polishing composition according to any one of claims 1 to 7; a kind of electronic device with high-pressure air-conditioning system
And cleaning the polished silicon substrate.
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| PCT/JP2020/038324 WO2022074831A1 (en) | 2020-10-09 | 2020-10-09 | Polishing liquid composition for silicon substrate |
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| JPWO2016143323A1 (en) * | 2015-03-11 | 2017-12-21 | 株式会社フジミインコーポレーテッド | Polishing composition and silicon substrate polishing method |
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