CN116031623A - Thin film sensor, preparation method thereof and electronic equipment - Google Patents

Abstract

The disclosure provides a thin film sensor, a preparation method thereof and electronic equipment, belongs to the technical field of wireless communication, and solves the problem of low transmittance of the existing thin film sensor. The thin film sensor of the present disclosure includes: a dielectric substrate; the conductive grid is arranged on the dielectric substrate; the conductive grid comprises a plurality of first conductive wires and a plurality of second conductive wires which are arranged in a crossing way; the first conductive wire extends along a first direction, and the second conductive wire extends along a second direction; the first conductive wires comprise a plurality of first sub-conductive wires which extend along a first direction and are arranged side by side, and the distance between the first sub-conductive wires is smaller than the distance between the first conductive wires; and/or the second conductive wires comprise a plurality of second sub conductive wires which extend along the second direction and are arranged side by side, and the spacing between the second sub conductive wires is smaller than the spacing between the second conductive wires.

Description

Thin film sensor, preparation method thereof and electronic equipment

Technical Field

The disclosure belongs to the technical field of wireless communication, and particularly relates to a thin film sensor, a preparation method thereof and electronic equipment.

Background

The transparent antenna is an antenna structure which is made of a specific metal structure and meets a certain transmittance, and has a nearly completely transparent effect visually.

Disclosure of Invention

The disclosure aims to at least solve one of the technical problems in the prior art, and provides a thin film sensor, a preparation method thereof and electronic equipment.

In a first aspect, embodiments of the present disclosure provide a thin film sensor, comprising:

a dielectric substrate;

a conductive mesh disposed on the dielectric substrate; the conductive grid comprises a plurality of first conductive wires and a plurality of second conductive wires which are arranged in a crossing manner; the first conductive line extends along a first direction, and the second conductive line extends along a second direction; wherein, the liquid crystal display device comprises a liquid crystal display device,

the first conductive wires comprise a plurality of first sub-conductive wires which extend along the first direction and are arranged side by side, and the interval between the first sub-conductive wires is smaller than the interval between the first conductive wires; and/or the second conductive wires comprise a plurality of second sub-conductive wires which extend along the second direction and are arranged side by side, and the spacing between the second sub-conductive wires is smaller than the spacing between the second conductive wires.

Optionally, when the first conductive line includes a plurality of first sub conductive lines extending in the first direction and arranged side by side, a pitch ratio between the first sub conductive lines and the first conductive lines is 1:2; and/or when the second conductive lines comprise a plurality of second sub conductive lines extending along the second direction and arranged side by side, the spacing ratio between the second sub conductive lines and the second conductive lines is 1:2.

Optionally, when the first conductive line includes a plurality of first sub conductive lines extending in the first direction and arranged side by side, a pitch between any adjacent first sub conductive lines is equal; and/or when the second conductive line comprises a plurality of second sub conductive lines extending along the second direction and arranged side by side, the intervals between any adjacent second sub conductive lines are equal.

Optionally, when the first conductive line includes a plurality of first sub conductive lines extending in the first direction and arranged side by side, a pitch ratio between a line width of any one of the first sub conductive lines and any adjacent first sub conductive line is 1:1; and/or when the second conductive line comprises a plurality of second sub-conductive lines extending along the second direction and arranged side by side, the spacing ratio between the line width of any one second sub-conductive line and the second sub-conductive line arranged adjacently is 1:1.

Optionally, when the first conductive line includes a plurality of first sub conductive lines extending in the first direction and arranged side by side, and the second conductive line includes a plurality of second sub conductive lines extending in the second direction and arranged side by side, line widths of the first sub conductive lines and the second sub conductive lines are equal; the first sub-conductive lines arranged arbitrarily adjacent to each other are equal in line pitch to the second sub-conductive lines arranged arbitrarily adjacent to each other.

Optionally, the line widths of the first sub-conductive lines and the second sub-conductive lines are 2-4 μm, and the line spacing between the first sub-conductive lines arranged arbitrarily adjacent and the second sub-conductive lines arranged arbitrarily adjacent is 2-4 μm.

Optionally, the dielectric substrate includes a substrate and a dielectric layer, the dielectric layer includes a plurality of first grooves and a plurality of second grooves, the first sub-conductive lines are disposed in the first grooves, and the second sub-conductive lines are disposed in the second grooves.

Optionally, the thin film sensor further comprises a protective layer, and the protective layer is arranged on one side of the dielectric layer, which is away from the substrate.

Optionally, the conductive mesh comprises a first sub-conductive mesh and a second sub-conductive mesh; the dielectric substrate comprises a first surface and a second surface which are oppositely arranged, the first sub-conductive grids are arranged on the first surface of the dielectric substrate, and the second sub-conductive grids are arranged on the second surface of the dielectric substrate.

In a second aspect, an embodiment of the present disclosure provides a method for manufacturing a thin film sensor, including:

providing a dielectric substrate;

forming a conductive grid on the dielectric substrate; the conductive grid comprises a plurality of first conductive wires and a plurality of second conductive wires which are arranged in a crossing manner; the first conductive line extends along a first direction, and the second conductive line extends along a second direction; wherein, the liquid crystal display device comprises a liquid crystal display device,

the first conductive wires comprise a plurality of first sub-conductive wires which extend along the first direction and are arranged side by side, and the interval between the first sub-conductive wires is smaller than the interval between the first conductive wires; and/or the second conductive wires comprise a plurality of second sub-conductive wires which extend along the second direction and are arranged side by side, and the spacing between the second sub-conductive wires is smaller than the spacing between the second conductive wires.

Optionally, forming the conductive grid on the dielectric substrate specifically includes:

forming a seed layer on the dielectric substrate;

forming a sacrificial layer on one side of the seed layer, which is away from the dielectric substrate;

forming a pattern of the sacrificial layer with grid-shaped grooves through a patterning process;

and forming a metal material in the groove through an electroplating process, and removing materials of the sacrificial layer and the seed layer, which are non-overlapped with the metal material, of the orthographic projection on the dielectric substrate to form a conductive grid.

In a third aspect, embodiments of the present disclosure provide an electronic device including the thin film sensor described above.

Drawings

FIG. 1 is a schematic diagram of an exemplary thin film sensor;

FIG. 2 is a schematic diagram of a thin film sensor according to an embodiment of the present disclosure;

FIG. 3 is a schematic diagram of another thin film sensor according to an embodiment of the present disclosure;

FIG. 4 is a schematic diagram of a further thin film sensor provided by an embodiment of the present disclosure;

FIG. 5 is a light field distribution diagram of the thin film sensor of FIG. 1;

FIG. 6 is a light field distribution diagram of the thin film sensor of FIG. 4;

FIG. 7 is a comparison of electric field profiles;

FIG. 8 is a graph showing transmittance contrast;

FIG. 9 is a schematic structural view of yet another thin film sensor provided in an embodiment of the present disclosure;

FIG. 10 is a cross-sectional view of the thin film sensor of FIG. 9 taken along the direction A-A;

fig. 11 is a flowchart of a method for forming a first sub-conductive line according to an embodiment of the disclosure.

Detailed Description

In order that those skilled in the art will better understand the technical solutions of the present disclosure, the present disclosure will be described in further detail with reference to the accompanying drawings and detailed description.

Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Likewise, the terms "a," "an," or "the" and similar terms do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.

It should be noted that, fig. 1 is a schematic structural diagram of an exemplary thin film sensor, and as shown in fig. 1, the thin film sensor includes: a dielectric substrate 1 and a conductive mesh disposed on the dielectric substrate 1. Taking a thin film sensor as an example of a transparent antenna, the conductive mesh may be a radiation layer. The radiation layer can be used as a receiving unit of the antenna structure and can also be used as a transmitting unit of the antenna structure.

In order to ensure good light transmittance of the radiation layer, the radiation layer needs to be patterned, for example, the radiation layer may be in a conductive grid shape made of a metal material. It will be appreciated that the radiation layer may also be formed by other patterns, such as diamond-shaped, triangular-shaped, etc. pattern block electrodes, which are not shown here. As can be seen from fig. 1, a conductive grid is arranged on a dielectric substrate 1, the conductive grid comprises a plurality of first conductive wires 2 and a plurality of second conductive wires 3 which are arranged in a crossing manner, wherein the first conductive wires 2 extend along a first direction, the second conductive wires 3 extend along a second direction, and the first direction is perpendicular to the second direction. The conductive grid shown in fig. 1 has a wide line width due to the material and the forming process of the conductive grid, and seriously affects the light transmittance of the thin film sensor, thereby affecting the use experience of a user.

It should be noted that the conductive mesh is not limited to be applied to an antenna structure, and may be used in a touch panel as a touch electrode. Of course, the conductive mesh may also be used in various metal lines, which are not listed here.

In order to solve the above technical problems, a thin film sensor, a manufacturing method thereof and an electronic device are provided in the embodiments of the present disclosure, and the thin film sensor, the manufacturing method thereof and the electronic device provided in the embodiments of the present disclosure will be described in further detail below with reference to the accompanying drawings and detailed description.

In a first aspect, embodiments of the present disclosure provide a thin film sensor that includes a dielectric substrate and a conductive mesh disposed on the dielectric substrate.

Specifically, the conductive mesh includes a plurality of first conductive lines and a plurality of second conductive lines disposed to cross each other, the first conductive lines extending in a first direction, and the second conductive lines extending in a second direction. The first conductive wires comprise a plurality of first sub-conductive wires which extend along a first direction and are arranged side by side, and the distance between the first sub-conductive wires is smaller than the distance between the first conductive wires; and/or the second conductive wires comprise a plurality of second sub conductive wires which extend along the second direction and are arranged side by side, and the spacing between the second sub conductive wires is smaller than the spacing between the second conductive wires.

That is, the first conductive line includes a plurality of first sub conductive lines extending in the first direction and arranged side by side, and a pitch between the first sub conductive lines is smaller than a pitch between the first conductive lines, or the second conductive line includes a plurality of second sub conductive lines extending in the second direction and arranged side by side, and a pitch between the second sub conductive lines is smaller than a pitch between the second conductive lines. Or, the first conductive line includes a plurality of first sub conductive lines extending along the first direction and arranged side by side, a pitch between the first sub conductive lines is smaller than a pitch between the first conductive lines, and the second conductive line includes a plurality of second sub conductive lines extending along the second direction and arranged side by side, a pitch between the second sub conductive lines is smaller than a pitch between the second conductive lines.

In this embodiment, since the conductive lines are arranged as a plurality of sub-conductive lines arranged at intervals, that is, each sub-conductive line has a gap therebetween, the transmission area of the thin film sensor is increased, and the transmittance of the thin film sensor is further increased.

The disclosure is illustrated below by way of several preferred embodiments:

fig. 2 is a schematic structural diagram of a thin film sensor according to an embodiment of the present disclosure, and as shown in fig. 2, the thin film sensor includes a dielectric substrate 1 and a conductive grid disposed on the dielectric substrate 1. The conductive grid comprises a plurality of first conductive lines 2 and a plurality of second conductive lines 3 arranged crosswise, the first conductive lines 2 extending in a first direction and the second conductive lines 3 extending in a second direction. Wherein the first conductive lines 2 include a plurality of first sub-conductive lines 21 extending in the first direction and arranged side by side, and a distance D between the first sub-conductive lines 21 is smaller than a distance D between the first conductive lines 2. In this embodiment, the first conductive line 2 is divided into two first sub-conductive lines 21, that is, the sum of the line widths of the two first sub-conductive lines 21 is equal to the line width of the first conductive line 2.

The dielectric substrate 1 may be a flexible substrate, and the material of the dielectric substrate may be a flexible material such as polyimide, so as to improve flexibility of the display module, so that the display module can have properties such as being bendable and bendable, so as to facilitate expanding an application range of the display module. Of course, the dielectric substrate 1 may be a rigid substrate, and the material thereof may specifically be a rigid material such as glass, acryl, etc., so as to ensure that the dielectric substrate 1 can effectively support the display panel thereon. The material of the dielectric substrate 1 can be determined according to the actual requirement of the product. The dielectric substrate 1 may have a single-layer structure or a multilayer structure. For example, the dielectric substrate 1 may include a polyimide layer, a buffer layer, and a polyimide layer stacked in this order. Note that, the structure of the dielectric substrate 1 is not limited thereto, and may be determined according to actual requirements.

The materials of the first conductive line 2 and the second conductive line 3 may be the same or different, and this embodiment will be described by taking the example that the materials of the first conductive line 2 and the second conductive line 3 are the same. For example, the material of the conductive line includes, but is not limited to, one or more of copper, titanium, aluminum, silver.

In the present embodiment, since the first conductive line 2 is split into two first sub-conductive lines 21 disposed at intervals, the transmission area of the thin film sensor can be increased, thereby increasing the transmittance of the thin film sensor.

In the present embodiment, the first conductive line 2 is divided into two first sub-conductive lines 21, and the number of the first sub-conductive lines 21 may be selected according to the situation, and is not particularly limited herein.

Fig. 3 is a schematic structural diagram of another thin film sensor according to an embodiment of the present disclosure, and as shown in fig. 3, the thin film sensor includes a dielectric substrate 1 and a conductive grid disposed on the dielectric substrate 1. The conductive grid comprises a plurality of first conductive lines 2 and a plurality of second conductive lines 3 arranged crosswise, the first conductive lines 2 extending in a first direction and the second conductive lines 3 extending in a second direction. Wherein the second conductive wires 3 include two second sub-conductive wires 31 extending in the second direction and arranged side by side, and a space between the second sub-conductive wires 31 is smaller than a space between the second conductive wires 3. In this embodiment, the second conductive line 3 is divided into two second sub-conductive lines 31, that is, the sum of the line widths of the two second sub-conductive lines 31 is equal to the line width of the second conductive line 3.

The dielectric substrate 1 may be a flexible substrate, and the material of the dielectric substrate may be a flexible material such as polyimide, so as to improve flexibility of the display module, so that the display module can have properties such as being bendable and bendable, so as to facilitate expanding an application range of the display module. Of course, the dielectric substrate 1 may be a rigid substrate, and the material thereof may specifically be a rigid material such as glass, acryl, etc., so as to ensure that the dielectric substrate 1 can effectively support the display panel thereon. The material of the dielectric substrate 1 can be determined according to the actual requirement of the product. The dielectric substrate 1 may have a single-layer structure or a multilayer structure. For example, the dielectric substrate 1 may include a polyimide layer, a buffer layer, and a polyimide layer stacked in this order. Note that, the structure of the dielectric substrate 1 is not limited thereto, and may be determined according to actual requirements.

The materials of the first conductive line 2 and the second conductive line 3 may be the same or different, and this embodiment will be described by taking the example that the materials of the first conductive line 2 and the second conductive line 3 are the same. For example, the material of the conductive line includes, but is not limited to, one or more of copper, titanium, aluminum, silver.

In the present embodiment, since the second conductive line 3 is split into two second sub-conductive lines 31 arranged at intervals, the transmission area of the thin film sensor can be increased, thereby increasing the transmittance of the thin film sensor.

In the present embodiment, the second conductive line 3 is divided into two second sub-conductive lines 31, and the number of the second sub-conductive lines 31 may be selected according to the situation, which is not particularly limited herein.

Fig. 4 is a schematic structural diagram of another thin film sensor provided in the implementation of the present disclosure, and as shown in fig. 4, the thin film sensor includes a dielectric substrate 1 and a conductive grid disposed on the dielectric substrate. The conductive grid comprises a plurality of first conductive lines 2 and a plurality of second conductive lines 3 arranged crosswise, the first conductive lines 2 extending in a first direction and the second conductive lines 3 extending in a second direction. Wherein the first conductive line 2 includes two first sub-conductive lines 21 extending along a first direction and arranged side by side, a space between the first sub-conductive lines 21 is smaller than a space between the first conductive lines 2, and the second conductive line 3 includes two second sub-conductive lines 31 extending along a second direction and arranged side by side, and a space between the second sub-conductive lines 31 is smaller than a space between the second conductive lines 3. The present embodiment divides the first conductive line 2 into two first sub-conductive lines 21 (i.e., the sum of the line widths of the two first sub-conductive lines 21 is equal to the line width of the first conductive line 2), and divides the second conductive line 3 into two second sub-conductive lines 31 (i.e., the sum of the line widths of the two second sub-conductive lines 31 is equal to the line width of the second conductive line 3).

The dielectric substrate 1 may be a flexible substrate, and the material of the dielectric substrate may be a flexible material such as polyimide, so as to improve flexibility of the display module, so that the display module can have properties such as being bendable and bendable, so as to facilitate expanding an application range of the display module. Of course, the dielectric substrate 1 may be a rigid substrate, and the material thereof may specifically be a rigid material such as glass, acryl, etc., so as to ensure that the dielectric substrate 1 can effectively support the display panel thereon. The material of the dielectric substrate 1 can be determined according to the actual requirement of the product. The dielectric substrate 1 may have a single-layer structure or a multilayer structure. For example, the dielectric substrate 1 may include a polyimide layer, a buffer layer, and a polyimide layer stacked in this order. Note that, the structure of the dielectric substrate 1 is not limited thereto, and may be determined according to actual requirements.

The materials of the first conductive line 2 and the second conductive line 3 may be the same or different, and this embodiment will be described by taking the example that the materials of the first conductive line 2 and the second conductive line 3 are the same. For example, the material of the conductive line includes, but is not limited to, one or more of copper, titanium, aluminum, silver.

In the present embodiment, since the first conductive line 2 is split into two first sub-conductive lines 21 disposed at intervals and the second conductive line 3 is split into two second sub-conductive lines 31 disposed at intervals, the transmission area of the thin film sensor can be further improved and the transmittance of the thin film sensor can be improved as compared with the thin film sensor shown in fig. 2 and 3.

In some of the present embodiments, as shown in fig. 4, the ratio of the spacing D1 between the first sub-conductive lines 21 to the spacing D1 between the first conductive lines 2 may be selected according to circumstances. Similarly, the ratio of the spacing D2 between the second sub-conductive lines 31 to the spacing D2 between the second conductive lines 3 may be selected according to circumstances. In this embodiment, the ratio of the distance D1 between the first sub-conductive lines 21 to the distance D1 between the first conductive lines 2 is preferably 1:2, and the ratio of the distance D2 between the second sub-conductive lines 31 to the distance D2 between the second conductive lines 3 is preferably 1:2. Note that the pitch between the respective sub-conductive lines, and the pitch between the respective conductive lines may be selected according to the pitch ratio between the sub-conductive lines and the conductive lines. For example, the pitch between the individual sub-conductive lines may be selected to be 2 μm, and the pitch between the individual conductive lines may be selected to be 4 μm.

In some of the present embodiments, when the first conductive lines include a plurality of first sub-conductive lines 21, the pitch between any adjacently disposed first sub-conductive lines 21 may be selected according to circumstances. Similarly, when the second conductive line includes a plurality of second sub-conductive lines 21, the pitch between any adjacent second sub-conductive lines 31 may be selected according to circumstances. In the present embodiment, it is preferable that the pitches between the first sub-conductive lines 21 and the pitches between the second sub-conductive lines 31 are equal.

In some embodiments, as shown in fig. 4, a ratio of the line width w1 of any one first sub-conductive line 21 to the space d1 between any adjacently disposed first sub-conductive lines 21 may be selected according to circumstances. Similarly, the ratio of the line width d2 of any one of the second sub-conductive lines 31 to the space d2 between any adjacent second sub-conductive lines 31 may be selected according to circumstances. In this embodiment, it is preferable that the ratio of the line width w1 of any one of the first sub-conductive lines 21 to the space d1 between any adjacent first sub-conductive lines 21 is 1:1, and the ratio of the line width w2 of any one of the second sub-conductive lines 31 to the space d2 between any adjacent second sub-conductive lines 31 is 1:1. It should be noted that, the line width w1 of the first sub-conductive line 21 and the distance d1 between any adjacent first sub-conductive lines 21 may be selected according to the ratio of the line width w1 of any one first sub-conductive line 21 to the distance d1 between any adjacent first sub-conductive lines 21. For example, the line width w1 of the first sub-conductive lines 21 is selected to be 2 μm, and the pitch d1 between any adjacently disposed first sub-conductive lines 21 is selected to be 2 μm.

In some embodiments, as shown in fig. 4, the line width w1 of the first sub-conductive line 21 and the line width w2 of the second sub-conductive line 31 may be equal, and the line spacing d1 of the first sub-conductive line 21 and the line spacing d2 of the second sub-conductive line 31 disposed arbitrarily adjacently may be equal. The line width w1 of the first sub-conductive line 21 and the line width w2 of the second sub-conductive line 31 are in the range of 2-4 μm, and the line spacing d1 of any adjacent first sub-conductive line 21 and the line spacing d2 of any adjacent second sub-conductive line 31 may be in the range of 2-4 μm. Preferably, the line widths of the first sub-conductive lines 21 and the second sub-conductive lines 31 are each 2 μm, and the line pitches of the first sub-conductive lines 21 and the second sub-conductive lines 31 disposed adjacently are each 2 μm.

Fig. 5 is a light field distribution diagram of the thin film sensor shown in fig. 1, fig. 6 is a light field distribution diagram of the thin film sensor shown in fig. 4, fig. 7 is a comparison diagram of an electric field distribution diagram, and fig. 8 is a transmittance comparison diagram. As shown in fig. 5-6, the thin film sensor provided by the present disclosure has a light transmittance that is greater than that of the existing thin film sensor. As shown in fig. 7, curve a represents the electric field distribution curve of the thin film sensor shown in fig. 1, and curve B represents the electric field distribution curve of the thin film sensor shown in fig. 4. As shown in fig. 8, a curve C represents an electric field distribution curve of the thin film sensor shown in fig. 1, and a curve D represents an electric field distribution curve of the thin film sensor shown in fig. 4, as can be seen from fig. 8, since the conductive wires are arranged as a plurality of sub-conductive wires arranged at intervals in the thin film sensor provided in the embodiment of the disclosure, the transmittance of the conductive mesh is significantly enhanced.

In some embodiments, the dielectric substrate may include a substrate and a dielectric layer including a plurality of first grooves in which the first sub-conductive lines are disposed and a plurality of second grooves in which the second sub-conductive lines are disposed.

Specifically, fig. 9 is a schematic structural diagram of still another thin film sensor according to an embodiment of the present disclosure, and fig. 10 is a cross-sectional view of the thin film sensor shown in fig. 9 along A-A direction, as shown in fig. 9-10, including a dielectric substrate 1 and a conductive grid disposed on the dielectric substrate. The conductive grid comprises a plurality of first conductive lines 2 and a plurality of second conductive lines 3 arranged crosswise, the first conductive lines 2 extending in a first direction and the second conductive lines 3 extending in a second direction. Wherein the first conductive line 2 includes two first sub-conductive lines 21 extending along a first direction and arranged side by side, a space between the first sub-conductive lines 21 is smaller than a space between the first conductive lines 2, and the second conductive line 3 includes two second sub-conductive lines 31 extending along a second direction and arranged side by side, and a space between the second sub-conductive lines 31 is smaller than a space between the second conductive lines 3. The dielectric substrate 1 comprises a substrate 11 and a dielectric layer 12 arranged on the substrate, the dielectric layer 12 is provided with a first groove 10, and a first sub-conductive wire 21 is arranged in the first groove 10.

In some embodiments, the thin film sensor further comprises a protective layer disposed on a side of the dielectric layer facing away from the substrate. Through setting up the protective layer, can protect electrically conductive net, prevent that electrically conductive net from receiving the damage.

In some embodiments, a thin film sensor includes a substrate base and a conductive mesh. The substrate base plate has a first surface and a second surface, i.e., an upper surface and a lower surface, disposed opposite to each other. The conductive grids comprise a first sub-conductive grid and a second sub-conductive grid, and the first sub-conductive grid and the second sub-conductive grid are respectively positioned on the upper surface and the lower surface of the substrate. Taking a thin film sensor as an example of a transparent antenna, the first sub-conductive grid may be a radiation layer, and the second sub-conductive grid may be a ground layer. The radiation layer can be used as a receiving unit of the antenna structure and can also be used as a transmitting unit of the antenna structure.

In this embodiment, since the conductive wires in the conductive mesh are arranged as a plurality of sub-conductive wires arranged at intervals, that is, each sub-conductive wire has a gap therebetween, the transmission area of the thin film sensor is increased, and the transmittance of the thin film sensor is further increased.

In a second aspect, an embodiment of the present disclosure provides a method for manufacturing a thin film sensor, including:

s1, providing a dielectric substrate. The dielectric substrate can be a flexible substrate, and the material of the dielectric substrate can be flexible materials such as polyimide, so that the flexibility of the display module is improved, and the display module can have the performances of being bendable, bendable and the like, so that the application range of the display module is widened. Of course, the dielectric substrate may be a rigid substrate, and the material of the dielectric substrate may be a rigid material such as glass, acryl, etc., so as to ensure that the dielectric substrate can effectively support the display panel thereon. The material of the dielectric substrate can be determined according to the actual requirement of the product. In addition, the dielectric substrate may have a single-layer structure or a multi-layer structure. For example, the dielectric substrate may include a polyimide layer, a buffer layer, and a polyimide layer stacked in this order. It should be noted that the structure of the dielectric substrate is not limited thereto, and the structure thereof may be determined according to actual requirements.

S2, forming a conductive grid on the dielectric substrate, wherein the conductive grid comprises a plurality of first conductive wires and a plurality of second conductive wires which are arranged in a crossing manner, the first conductive wires extend along a first direction, and the second conductive wires extend along a second direction; the first conductive wires comprise a plurality of first sub-conductive wires which extend along a first direction and are arranged side by side, and the distance between the first sub-conductive wires is smaller than the distance between the first conductive wires; and/or the second conductive wires comprise a plurality of second sub conductive wires which extend along the second direction and are arranged side by side, and the spacing between the second sub conductive wires is smaller than the spacing between the second conductive wires.

In some embodiments, forming the conductive mesh on the dielectric substrate specifically includes:

s11, forming a seed layer on the dielectric substrate.

S12, forming a sacrificial layer on one side of the seed layer, which is away from the dielectric substrate.

S13, forming a pattern of the sacrificial layer with grid-shaped grooves through a composition process, wherein the seed layer is exposed at the grooves;

and S14, forming a metal material in the groove through an electroplating process, and removing materials of the sacrificial layer and the seed layer, which are projected on the dielectric substrate in a front mode and are not overlapped with the metal material, so as to form the conductive grid.

The following describes an example of a method of forming the first sub-conductive line 21:

as shown in fig. 11, the method for forming the first sub-conductive line 21 includes:

s111, a dielectric substrate 111 is provided.

In some embodiments, the medium substrate 111 may be a flexible film, and the flexible film material may be at least one of a COP film, polyimide (PI) or polyethylene terephthalate (PET), where in S1, the flexible COP film may be attached to the glass substrate by a transparent optical adhesive (OCA adhesive), and then the glass substrate with the COP film formed thereon is cleaned.

S112, a seed layer 112 is formed on the dielectric substrate 111, where the seed layer 112 may be a metal film, such as a copper film, an aluminum film, a silver film, etc., deposited sequentially by a sputtering process, etc., and in this embodiment, the seed layer is exemplified by a copper film.

And S113, forming a sacrificial layer 113 on one side of the seed layer 112, which is away from the dielectric substrate 111, and forming a groove on the sacrificial layer through a patterning process, wherein the seed layer 111 is exposed at the groove. In some examples, the sacrificial layer 113 may be selected from low temperature curable organic curable glue having a thickness of about 2.5 μm to about 3.5 μm. The width of the grooves on the sacrificial layer 113 is about 2 μm to 3 μm, and the corresponding depth is 2 μm to 3 μm, and the specific depth of the grooves depends on the thickness of the sacrificial layer. Of course, the sacrificial layer 113 in the embodiment of the disclosure is not limited to the organic curing glue, and insulating dielectric layer materials such as silicon oxide and silicon nitride may be used. The organic curing glue is selected as the sacrificial layer material in the implementation of the present disclosure to ensure that the sidewalls of the formed grooves are perpendicular to the surface of the dielectric substrate 111, which is helpful for the uniformity of the line width of the conductive grid formed subsequently.

And S114, forming a metal material in the groove through an electroplating process. The method specifically comprises the following steps: placing the side of the dielectric substrate 11 with the groove on a carrier of an electroplating machine, pressing on an electric welding disk (pad), placing the carrier into a hole filling electroplating bath (special hole filling electrolyte is used in the bath), adding current, keeping the surface of the dielectric substrate 111 continuously and rapidly flowing with the electroplating liquid, obtaining electrons from cations in the electroplating liquid on the side wall of the groove to form atoms to deposit on the side wall, and mainly depositing metallic copper (deposition speed is 0.5-3 um/min) in the groove at high speed and extremely small (0.005-0.05 um/min) on the sacrificial layer 113 by the special hole filling electrolyte with special proportion. The metal copper on the side wall of the groove is gradually grown and thick along with the increase of time, even the groove can be completely filled, and finally the dielectric substrate is taken out and washed by deionized water.

S115, removing the materials of the sacrificial layer 113 and the seed layer 112, which are not overlapped with the metal material, from the front projection on the dielectric substrate 111 to form the first sub-wires 21.

It should be noted that, in this embodiment, an example is taken in which one sub-conductive line is formed on the dielectric substrate, and it is understood that the principle of forming a plurality of conductive lines on the dielectric substrate is the same as that of forming one sub-conductive line on the dielectric substrate, and will not be described herein.

In a third aspect, embodiments of the present disclosure provide an electronic device including the thin film sensor described above. The electronic device may be, for example, a mobile phone, a tablet computer, an electronic watch, a sports bracelet, a notebook computer, etc. The technical effects of the electronic device may be referred to the above discussion of the technical effects of the thin film sensor, and will not be repeated herein.

It is to be understood that the above embodiments are merely exemplary embodiments employed to illustrate the principles of the present disclosure, however, the present disclosure is not limited thereto. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the disclosure, and are also considered to be within the scope of the disclosure.

Claims (12)

1. A thin film sensor, comprising:

a dielectric substrate;

a conductive mesh disposed on the dielectric substrate; the conductive grid comprises a plurality of first conductive wires and a plurality of second conductive wires which are arranged in a crossing manner; the first conductive line extends along a first direction, and the second conductive line extends along a second direction; wherein, the liquid crystal display device comprises a liquid crystal display device,

the first conductive wires comprise a plurality of first sub-conductive wires which extend along the first direction and are arranged side by side, and the interval between the first sub-conductive wires is smaller than the interval between the first conductive wires; and/or the second conductive wires comprise a plurality of second sub-conductive wires which extend along the second direction and are arranged side by side, and the spacing between the second sub-conductive wires is smaller than the spacing between the second conductive wires.

2. The thin film sensor according to claim 1, wherein when the first conductive line includes a plurality of first sub-conductive lines extending in the first direction and arranged side by side, a pitch ratio between the first sub-conductive lines and the first conductive line is 1:2; and/or when the second conductive lines comprise a plurality of second sub conductive lines extending along the second direction and arranged side by side, the spacing ratio between the second sub conductive lines and the second conductive lines is 1:2.

3. The thin film sensor according to claim 1, wherein when the first conductive line includes a plurality of first sub-conductive lines extending in the first direction and arranged side by side, a pitch between any adjacent first sub-conductive lines is equal; and/or when the second conductive line comprises a plurality of second sub conductive lines extending along the second direction and arranged side by side, the intervals between any adjacent second sub conductive lines are equal.

4. The thin film sensor according to claim 1, wherein when the first conductive line includes a plurality of first sub-conductive lines extending in the first direction and arranged side by side, a pitch ratio between a line width of any one of the first sub-conductive lines and any adjacent first sub-conductive line is 1:1; and/or when the second conductive line comprises a plurality of second sub-conductive lines extending along the second direction and arranged side by side, the spacing ratio between the line width of any one second sub-conductive line and the second sub-conductive line arranged adjacently is 1:1.

5. The thin film sensor according to claim 1, wherein when the first conductive line includes a plurality of first sub conductive lines extending in the first direction and arranged side by side, and the second conductive line includes a plurality of second sub conductive lines extending in the second direction and arranged side by side, line widths of the first sub conductive lines and the second sub conductive lines are equal; the first sub-conductive lines arranged arbitrarily adjacent to each other are equal in line pitch to the second sub-conductive lines arranged arbitrarily adjacent to each other.

6. The thin film sensor according to claim 5, wherein line widths of the first sub-conductive lines and the second sub-conductive lines are each 2 to 4 μm, and line pitches of the first sub-conductive lines disposed arbitrarily adjacently and the second sub-conductive lines disposed arbitrarily adjacently are each 2 to 4 μm.

7. The thin film sensor of claim 1, wherein the dielectric substrate comprises a substrate and a dielectric layer, the dielectric layer comprising a plurality of first grooves and a plurality of second grooves, the first sub-conductive lines disposed in the first grooves and the second sub-conductive lines disposed in the second grooves.

8. The thin film sensor of claim 7, further comprising a protective layer disposed on a side of the dielectric layer facing away from the substrate base plate.

9. The thin film sensor of claim 1, wherein the conductive mesh comprises a first sub-conductive mesh and a second sub-conductive mesh; the dielectric substrate comprises a first surface and a second surface which are oppositely arranged, the first sub-conductive grids are arranged on the first surface of the dielectric substrate, and the second sub-conductive grids are arranged on the second surface of the dielectric substrate.

10. A method of manufacturing a thin film sensor, comprising:

providing a dielectric substrate;

forming a conductive grid on the dielectric substrate; the conductive grid comprises a plurality of first conductive wires and a plurality of second conductive wires which are arranged in a crossing manner; the first conductive line extends along a first direction, and the second conductive line extends along a second direction; wherein, the liquid crystal display device comprises a liquid crystal display device,

the first conductive wires comprise a plurality of first sub-conductive wires which extend along the first direction and are arranged side by side, and the interval between the first sub-conductive wires is smaller than the interval between the first conductive wires; and/or the second conductive wires comprise a plurality of second sub-conductive wires which extend along the second direction and are arranged side by side, and the spacing between the second sub-conductive wires is smaller than the spacing between the second conductive wires.

11. The method of manufacturing a thin film sensor according to claim 10, wherein forming a conductive mesh on the dielectric substrate specifically comprises:

forming a seed layer on the dielectric substrate;

forming a sacrificial layer on one side of the seed layer, which is away from the dielectric substrate;

forming a pattern of the sacrificial layer with grid-shaped grooves through a patterning process;

and forming a metal material in the groove through an electroplating process, and removing materials of the sacrificial layer and the seed layer, which are non-overlapped with the metal material, of the orthographic projection on the dielectric substrate to form a conductive grid.

12. An electronic device, comprising: the thin film sensor of claims 1-9.

Images