CN116031333B - Monitoring method for TOPCON battery tunneling oxide passivation contact process - Google Patents
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Abstract
The invention relates to the technical field of solar cells, in particular to a monitoring method of a TOPCON cell tunneling oxide passivation contact process. The invention monitors the stability of the process of 'tunnel oxide passivation contact' in battery production through a specific process flow, and the specific process flow comprises the steps of selecting a monocrystalline raw silicon wafer with the resistivity of 1.2-1.8 omega cm, polishing the raw silicon wafer, preparing a tunnel oxide passivation contact structure, performing phosphorus doping, plating a silicon nitride anti-reflection film, sintering at high temperature and testing Sinton. Through the Sinton test, the stability of the tunneling oxide passivation contact process can be accurately monitored according to the ideal open-circuit voltage and reverse current saturation density of the obtained silicon wafer, the test period of the battery is indirectly shortened, and the generation of a large number of unqualified batteries or low-efficiency batteries is avoided.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a monitoring method of a TOPCON cell tunneling oxide passivation contact process.
Background
TOPCon batteries have good stability and higher efficiency potential, and are prepared using TOPCon (Tunnel Oxide Passivated Contact) technology. TOPCon technology is a novel passivation contact technology that achieves passivation by plating an ultra-thin silicon oxide layer and doped thin film silicon on the surface of a silicon substrate of a battery. The ultrathin silicon oxide layer can reduce the lower tunneling resistance of the surface of the battery, and the doped film silicon layer can provide field passivation and enable carriers to selectively penetrate, so that a good passivation contact structure is formed with the silicon substrate.
At present, a TOPCON technology is used for preparing a solar cell, and a process method of alkali texturing, boron diffusion, wet etching, back polishing, tunneling oxide passivation contact, back phosphorus doping, wet etching, winding plating cleaning, aluminum oxide passivation, front and back coating, screen printing and sintering is usually adopted, wherein the stability of the process of the tunneling oxide passivation contact is critical, the stability of the process is closely related to accessories of equipment used in the process, the aging or replacement of the equipment accessories directly influences the stability of the process, and whether the process is stable or not directly influences the quality of the obtained cell. If the battery product is finally obtained and then the battery efficiency is found to be unqualified through testing, a large amount of time can be consumed to check each step of process so as to find the problem, thus a large amount of unqualified TOPCO batteries or low-efficiency batteries can be generated, further resources and time are wasted, and the industrialized production is seriously influenced. However, there is no method for rapidly monitoring the process stability of the tunnel oxide passivation contact.
Disclosure of Invention
Aiming at the technical problems, the invention provides a monitoring method of a TOPCON battery tunneling oxide passivation contact process, which has simple flow and short time consumption, can track the influence trend of the whole process period of tunneling oxide passivation contact on the battery efficiency, timely reflect the problems of the process or equipment, and avoid a large number of unqualified batteries or low-efficiency batteries.
In order to solve the technical problems, the invention adopts the following technical scheme:
the invention provides a monitoring method of a TOPCON battery tunneling oxide passivation contact process, which comprises the following process steps:
s1, polishing a monocrystalline raw silicon wafer with resistivity of 1.2-1.8 omega cm;
s2, sequentially preparing a tunneling oxide layer and a polycrystalline silicon passivation layer on the surface of the monocrystalline raw silicon wafer subjected to polishing treatment, and then carrying out phosphorus doping;
s3, plating a silicon nitride antireflection film on the surface of the monocrystalline raw silicon wafer after phosphorus doping;
s4, sintering at a high temperature;
s5, sinton test, if the ideal open-circuit voltage iVoc is more than or equal to 740mV, the reverse saturation current density J0 is less than or equal to 5fA/cm 2 And the passivation contact process of the tunneling oxide layer is stable.
According to the monitoring method of the TOPCON battery tunneling oxide passivation contact process, the screened monocrystalline raw silicon wafer with the resistivity in the range of 1.2-1.8 omega cm is subjected to polishing treatment, tunneling oxide passivation contact, phosphorus doping, silicon nitride antireflection film plating, high-temperature sintering and Sinton testing in sequence, so that the stability of the tunneling oxide passivation contact in the 5 th step process of conventional TOPCON battery production is monitored, the qualification rate and the battery efficiency of the obtained battery are not affected, and a large number of unqualified batteries or low-efficiency batteries caused by unstable processes are avoided. The monitoring method is simple in flow and short in time consumption, the stability of the tunneling oxide passivation contact process can be accurately monitored by monitoring the ideal open-circuit voltage and the reverse current saturation density through the Sinton test, the test period of the tunneling oxide passivation contact process is obviously shortened, and the speed of searching the tunneling oxide passivation contact process problem in the production line is accelerated.
With reference to the first aspect, the resistivity of the monocrystalline raw silicon wafer in S1 is 1.4-1.6 Ω cm, and the silicon wafer in the resistivity range can minimize the influence of the resistivity due to the uneven raw silicon wafer on the determination of the process parameters.
In combination with the first aspect, the single crystal raw silicon wafer is subjected to double-sided alkali polishing treatment in S1, the liquid medicine used for polishing contains alkali and polishing additive, the alkali is potassium hydroxide and/or sodium hydroxide, the concentration is 1.0-1.5wt%, the concentration of the polishing additive is 0.4-0.6wt%, and the polishing temperature is 50-60 ℃. The polishing time is preferably 2 to 4 minutes.
Preferably, the polishing treatment further comprises pre-cleaning the monocrystalline silicon wafer with a pre-cleaning liquid composed of potassium hydroxide and/or sodium hydroxide and hydrogen peroxide before polishing by using the liquid medicine, wherein the concentration of the hydrogen peroxide is 5.0-6.0wt%, the temperature of the liquid medicine is controlled at 50-55 ℃, and the cleaning time is 1-2min.
With reference to the first aspect, the reflectivity of the surface polished to the silicon wafer in S1 is not less than 42%, and the reflectivity is measured by using a D8 reflectometer.
With reference to the first aspect, the oxidation temperature for preparing the passivation contact structure of the tunneling oxide layer in S2 is 600+ -15deg.C, O 2 Flow rate of 18000+/-1000 sccm; the thicknesses of the tunneling oxide layer and the polysilicon passivation layer are respectively 1-2nm and 60-200nm.
In combination with the first aspect, the deposition temperature of the phosphorus doping process in S2 is 890+/-10 ℃, the cooling temperature is 700+/-10 ℃, and the uniform diffusion during the phosphorus doping can be ensured in the temperature range; the sheet resistance of the phosphorus doped silicon wafer obtained was 36.+ -.5. Omega/port.
In combination with the first aspect, in S3, the silicon nitride antireflection film is coated on the two sides of the monocrystalline silicon wafer, wherein the silicon nitride antireflection film comprises a low refractive index silicon nitride film, a high refractive index silicon nitride film and a silicon oxynitride film, the power used for coating is preferably 9000-10000W, 10000-12000W and 10000-12000W in sequence, and the pressure used for coating is preferably 1700mtorr; the coating temperature is 480-540 ℃.
With reference to the first aspect, the thickness of the film coated on the monocrystalline raw silicon piece in S3 is 65+/-5 nm, and the refractive index after film coating is 2.0-2.1.
With the combination of the first aspect, the belt speed of the conveyor belt is 10-15m/min during the high-temperature sintering in S4; the temperature of each temperature zone of high-temperature sintering is set as follows: 400-800 ℃.
The TOPCON battery tunneling oxide passivation contact process monitoring method provided by the invention can be used for rapidly monitoring the stability of the tunneling oxide passivation contact process, is simple in flow and short in time consumption, avoids the situation that the conventional process flow can only be used for checking the problem in the production line after the battery is obtained and the performance of the tested battery is found to be unqualified or low in efficiency, saves the time consumed when the problem of searching the process production line when the obtained battery is unqualified or the battery efficiency is low, and also avoids the occurrence of a large number of unqualified batteries or low-efficiency batteries.
Drawings
Fig. 1 is a process flow chart of the monitoring method provided by the invention.
Detailed Description
The present invention will be described in further detail with reference to specific embodiments in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are merely illustrative
The invention is to be interpreted as illustrative and not limiting.
Example 1
The embodiment of the invention provides a method for monitoring the performance of a TOPCON battery tunneling oxide passivation contact structure, which comprises the following specific process steps:
s1, selecting 5 monocrystalline raw silicon wafers with resistivity of 1.4-1.6 omega cm, and polishing, wherein the specific polishing steps are as follows:
(1) And (3) pre-cleaning: formulation of KOH and H 2 O 2 The mixed solution of (2) is used as a liquid medicine to carry out pre-cleaning on the silicon wafer, the concentration of KOH is 1.0 weight percent, and H 2 O 2 The concentration of the mixture is 5.0 weight percent, the temperature of the liquid medicine is 50 ℃, and the reaction is carried out for 1 minute;
(2) Washing: removing the residual liquid medicine in the cleaning step before the surface of the silicon wafer by using deionized water;
(3) Polishing: the polishing liquid medicine is a mixture of KOH and an alkali polishing additive, wherein the concentration of KOH is 1.5wt%, the concentration of the polishing additive is 0.4wt%, the reaction temperature is 50 ℃, the reaction time is 2 minutes, and the uniformity of the liquid medicine is ensured by adopting a circulating and bubbling mode in the tank body;
(4) Post-cleaning: preparing a mixed solution of HCl and HF, post-cleaning the silicon wafer, wherein the concentration of the HCl is 4.0wt% and the concentration of the HF is 2.0wt%, and then using cold water for slow-pulling cleaning;
(5) And (3) drying: and drying the silicon wafer at 80 ℃.
And the surface reflectivity of the dried silicon wafer is 43% by using a D8 reflectometer.
S2, sequentially preparing a tunneling oxide layer and a polycrystalline silicon passivation layer on the surface of the monocrystalline raw silicon wafer subjected to S1 polishing treatment, and then carrying out phosphorus doping, wherein the specific steps are as follows:
s2.1, preparing a tunneling oxide layer and a polycrystalline silicon passivation layer:
(1) Initial oxidation: the temperature of the temperature zone is 600+/-15 ℃, the oxidation time is 10 minutes, and O 2 The flow rate is 18000sccm;
(2) Oxidation maintenance: the temperature in the temperature zone is kept unchanged for 25 minutes;
(3) And (3) vacuumizing: the temperature in the temperature zone is kept unchanged, the pressure is 10mbar, and the temperature is kept for 2 minutes;
(4) And (3) deposition purging: the temperature in the temperature zone is kept unchanged, and SiH is introduced 4 Dividing the furnace into three sections of air inlet, and keeping the flow from the furnace mouth to the furnace tail for 2 minutes at 270sccm,350sccm and 480sccm respectively;
(5) And (3) vacuumizing: introducing SiH 4 Three sections of air are introduced, and the flow rates from the furnace mouth to the furnace tail are 500sccm,500sccm and 500sccm respectively, and the furnace is kept for 2 minutes;
(6) And (3) deposition: introducing SiH 4 Three sections of air are introduced, and the flow rates from the furnace mouth to the furnace tail are 150sccm,270sccm and 300sccm respectively, and the furnace is kept for 25 minutes.
The thickness of the tunneling oxide layer and the thickness of the polysilicon layer of the silicon wafer obtained by testing are respectively 1.8nm and 120nm.
S2.2, specific steps of phosphorus doping:
(1) Leak detection: the pressure in the equipment is less than-200 Pa;
(2) Heating: the temperature in the temperature zone is 890+/-10 ℃ for 3 minutes, the jump is carried out according to the temperature, and the large flow N is generated 2 And a small flow N 2 Is controlled at 9slm and 100sccm;
(3) And (3) pre-purifying: the temperature in the temperature zone is 890+/-10 ℃, the time is 3 minutes, and the flow rate of N is large 2 And a small flow N 2 Is controlled to be 12slm and 1000sccm, O 2 The flow rate is 500sccm;
(4) And (3) deposition: the temperature in the temperature zone is 890+/-10 ℃, the time is 25 minutes, and the flow rate of N is large 2 And a small flow N 2 Is controlled to be 12slm and 1000sccm, O 2 The flow rate is 150sccm;
(5) Propelling: the temperature in the temperature zone is 890+/-10 ℃, the time is 5 minutes, and the flow rate of N is large 2 And a small flow N 2 Is controlled to be 5slm and 500sccm, O 2 The flow rate is 50sccm;
(6) Post-purification: the temperature of the temperature zone is 700 ℃, the time is 1 minute, and the high flow N is obtained 2 Is controlled to 14slm, O 2 The flow rate is 800sccm;
(7) And (3) cooling: the temperature of the temperature zone is 700 ℃ and the time is 3 minutes, the jump is carried out according to the temperature, and large-flow N is introduced 2 The flow rate was 15slm.
The resulting silicon wafer was tested for a sheet resistance of 38Ω/port.
S3, plating a silicon nitride antireflection film on the surface of the monocrystalline raw silicon wafer doped with phosphorus and completing the tunneling oxide layer and the polycrystalline silicon passivation layer, wherein the specific steps are as follows:
(1) Plating a low refractive index silicon nitride film: temperature of 480 ℃, time of 100s, NH 3 /SiN 4 =3.5, power 9000W, pressure 1700mtorr;
(2) Plating a high refractive index silicon nitride film: temperature: 480 ℃, 120s, NH 3 /SiN 4 =13.5, power 10000W, pressure 1700mtorr;
(3) Silicon oxynitride film plating: temperature: 480 ℃, time 400s, NH 3 /SiN 4 /N 2 O=10:1:3.5, power 10000W, pressure 1700mtorr.
The silicon nitride antireflection film of the obtained silicon wafer was tested to have a thickness of 68nm and a refractive index of 2.0.
S4, sintering at a high temperature:
high-temperature sintering is carried out on the monocrystalline raw silicon piece obtained by the process, wherein the belt speed of a conveyor belt is set to be 10m/min during sintering, and the temperature of each temperature zone is set as follows in sequence: 400 ℃/450 ℃/500 ℃/550 ℃/630 ℃/750 ℃/790 ℃/790 ℃/790 ℃/790 ℃/680 ℃/680 ℃.
S5, sinton test:
the obtained single crystal silicon wafer was subjected to a Sinton test, and the test results are shown in Table 1.
Example 2
The embodiment of the invention provides a monitoring method of a TOPCON battery tunneling oxide passivation contact process, which comprises the following specific process steps:
s1, selecting 5 monocrystalline raw silicon wafers with resistivity of 1.4-1.6 omega cm in the same batch as that of the embodiment 1, and polishing, wherein the specific polishing steps are as follows;
(1) And (3) pre-cleaning: formulation of KOH and H 2 O 2 The mixed solution of (2) is used as a liquid medicine to carry out pre-cleaning on the silicon wafer, the concentration of KOH is 1.5 weight percent, and H 2 O 2 The concentration of (2) is 6.0wt%, the temperature of the liquid medicine is 55 ℃, and the reaction is carried out for 2 minutes；
(2) Washing: removing the residual liquid medicine in the cleaning step before the surface of the silicon wafer by using deionized water;
(3) Polishing: the polishing liquid medicine is a mixture of KOH and an alkali polishing additive, wherein the concentration of KOH is 1.5wt%, the concentration of the polishing additive is 0.6wt%, the reaction temperature is 60 ℃, the reaction time is 4 minutes, and the uniformity of the liquid medicine is ensured by adopting a circulating and bubbling mode in the tank body;
(4) Post-cleaning: preparing a mixed solution of HCl and HF, post-cleaning the silicon wafer, wherein the concentration of the HCl is 5.0wt% and the concentration of the HF is 3.0wt%, and then using cold water for slow-pulling cleaning;
(5) And (3) drying: and drying the silicon wafer at 90 ℃.
And the surface reflectivity of the dried silicon wafer is 42.5% by using a D8 reflectometer.
S2, sequentially preparing a tunneling oxide layer and a polycrystalline silicon passivation layer on the surface of the monocrystalline raw silicon wafer subjected to S1 polishing treatment, and then carrying out phosphorus doping, wherein the specific steps are as follows:
s2.1, preparing a tunneling oxide layer and a polycrystalline silicon passivation layer:
(1) Initial oxidation: the temperature of the temperature zone is 600+/-15 ℃, the oxidation time is 11 minutes, and O 2 The flow rate is 18000sccm;
(2) Oxidation maintenance: the temperature in the temperature zone is kept unchanged for 28 minutes;
(3) And (3) vacuumizing: the temperature in the temperature zone is kept unchanged, the pressure is 10mbar, and the temperature is kept for 2 minutes;
(4) And (3) deposition purging: the temperature in the temperature zone is kept unchanged, and SiH is introduced 4 Dividing the furnace into three sections of air inlet, and keeping the flow from the furnace mouth to the furnace tail for 3 minutes at 270sccm,350sccm and 480sccm respectively;
(5) And (3) vacuumizing: introducing SiH 4 Three sections of air are introduced, and the flow rates from the furnace mouth to the furnace tail are 500sccm,500sccm and 500sccm respectively, and the furnace is kept for 3 minutes;
(6) And (3) deposition: introducing SiH 4 Three sections of air are introduced, and the flow rates from the furnace mouth to the furnace tail are 150sccm,270sccm and 300sccm respectively, and the furnace is kept for 30 minutes.
The thickness of the tunneling oxide layer and the thickness of the polysilicon layer of the silicon wafer obtained by the test are respectively 1.8nm and 125nm.
S2.2, specific steps of phosphorus doping:
(1) Leak detection: the pressure in the equipment is less than-200 Pa;
(2) Heating: the temperature in the temperature zone is 890+/-10 ℃ for 30 minutes, the jump is carried out according to the temperature, and the large flow N is generated 2 And a small flow N 2 Is controlled at 9slm and 100sccm;
(3) And (3) pre-purifying: the temperature in the temperature zone is 890+/-10 ℃, the time is 3 minutes, and the flow rate of N is large 2 And a small flow N 2 Is controlled to be 12slm and 1000sccm, O 2 The flow rate is 500sccm;
(4) And (3) deposition: the temperature in the temperature zone is 890+/-10 ℃, the time is 25 minutes, and the flow rate of N is large 2 And a small flow N 2 Is controlled to be 12slm and 1000sccm, O 2 The flow rate is 150sccm;
(5) Propelling: the temperature in the temperature zone is 890+/-10 ℃, the time is 5 minutes, and the flow rate of N is large 2 And a small flow N 2 Is controlled to be 5slm and 500sccm, O 2 The flow rate is 50sccm;
(6) Post-purification: the temperature of the temperature zone is 700 ℃, the time is 2 minutes, and the high flow N is obtained 2 Is controlled to 14slm, O 2 The flow rate is 800sccm;
(7) And (3) cooling: the temperature of the temperature zone is 700 ℃ and the time is 30 minutes, the jump is carried out according to the temperature, and large-flow N is introduced 2 The flow rate was 15slm.
The square resistance of the resulting silicon wafer was tested to be 39 Ω/port.
S3, plating a silicon nitride antireflection film on the surface of the monocrystalline raw silicon wafer doped with phosphorus and completing the tunneling oxide layer and the polycrystalline silicon passivation layer, wherein the specific steps are as follows:
(1) Plating a low refractive index silicon nitride film: temperature 540 ℃, time 120s, NH 3 /SiN 4 =5.5, power 10000W, pressure 1700mtorr;
(2) Plating a high refractive index silicon nitride film: temperature: 540 ℃, time 150s, NH 3 /SiN 4 =15.5, power 12000W, pressure 1700mtorr;
(3) Silicon oxynitride film plating: temperature: 540 ℃, 450s, NH 3 /SiN 4 /N 2 O=11:1:4, power 12000W, pressure 1700mtorr.
The silicon nitride antireflection film of the obtained silicon wafer was tested to have a thickness of 65nm and a refractive index of 2.0.
S4, sintering at a high temperature:
high-temperature sintering is carried out on the monocrystalline raw silicon piece obtained by the process, wherein the belt speed of a conveyor belt is set to be 15m/min during sintering, and the temperature of each temperature zone is set as follows in sequence: 400 ℃/450 ℃/500 ℃/550 ℃/620 ℃/700 ℃/750 ℃/800 ℃/800 ℃/800 ℃/700 ℃/700 ℃ which is the same as the temperature of the glass.
S5, sinton test:
the obtained raw silicon wafer was subjected to a Sinton test, and the test results are shown in Table 1.
Comparative examples 1 to 2
The specific process steps of the method for monitoring the performance of the TOPCon battery tunneling oxide passivation contact structure provided by the comparative examples 1-2 are similar to those of the example 1, and the difference is that the process of plating the silicon nitride anti-reflection film on the surface of the single crystal raw silicon wafer after the phosphorus doping in the step S3 of the example 1 is not performed, and the specific parameters of the rest process steps are the same as those of the corresponding process steps in the example 1, namely, the process flow is as follows:
s1, polishing a monocrystalline raw silicon wafer with resistivity of 1.2-1.8 omega cm;
s2, sequentially preparing a tunneling oxide layer and a polycrystalline silicon passivation layer on the surface of the monocrystalline raw silicon wafer subjected to polishing treatment, and then carrying out phosphorus doping;
s3, sintering at a high temperature;
s4, sinton testing.
TABLE 1 results of Sinton test performed for examples 1-2 and comparative examples 1-2
As can be seen from the data in Table 1, the process flow of the monitoring method does not include "at completion of phosphorus dopingWhen the silicon nitride antireflection film is plated on the surface of the monocrystalline raw silicon wafer, the Sinton test shows that the minority carrier lifetime of the silicon wafer is extremely unstable, the data of the single face J0 and the iVoc between the silicon wafers are also quite different, and the process flow provided in comparative examples 1-2 cannot monitor the stability of the tunneling oxide passivation contact process. The silicon chips obtained in examples 1-2 have relatively stable minority carrier lifetime after Sinton test, and meet the ideal open-circuit voltage iVoc of more than or equal to 740mV and reverse saturation current density J0 of less than or equal to 5fA/cm 2 The requirement of the tunnel oxide passivation contact process is stable, and the tunnel oxide passivation contact process can be used for producing batteries.
Test example
After monitoring and proving process stability of the "tunnel oxide passivation contact" process in the battery production line using the process flow in example 1, batteries were prepared using the "tunnel oxide passivation contact" process conditions obtained after monitoring in example 1 and battery efficiencies of the obtained batteries were tested, and the results are shown in table 2.
Table 2 test results of example 1 and the battery obtained by the normal process
As can be seen from the test data of the battery efficiency in the table 2, the monitoring method provided by the invention can judge whether the stability of the tunneling oxide passivation contact process in the battery production line is qualified or not through the result of the Sinton test, and the process flow is simple and takes short time, so that the situation that a large number of unqualified batteries are generated when unqualified batteries or low battery efficiency are detected is avoided.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, or alternatives falling within the spirit and principles of the invention.
Claims (9)
1. A monitoring method of TOPCON battery tunnel oxide passivation contact process is characterized by comprising the following specific process steps:
s1, polishing a monocrystalline raw silicon wafer with resistivity of 1.2-1.8 omega cm;
s2, sequentially preparing a tunneling oxide layer and a polycrystalline silicon passivation layer on the surface of the monocrystalline raw silicon wafer subjected to polishing treatment, and then carrying out phosphorus doping;
s3, plating a silicon nitride antireflection film on the surface of the monocrystalline raw silicon wafer after phosphorus doping;
s4, sintering at a high temperature;
s5, sinton test, if the ideal open-circuit voltage iVoc is more than or equal to 740mV, the reverse saturation current density J0 is less than or equal to 5fA/cm 2 And the passivation contact process of the tunneling oxide layer is stable.
2. The method for monitoring a TOPCon cell tunneling oxide passivation contact process according to claim 1, wherein the resistivity of the single crystal raw silicon wafer in S1 is 1.4-1.6 Ω cm.
3. The monitoring method of the TOPCON battery tunneling oxide passivation contact process according to claim 1, wherein in S1, double-sided alkali polishing treatment is carried out on the monocrystalline silicon piece, the liquid medicine used for polishing contains alkali and polishing additive, the alkali is potassium hydroxide and/or sodium hydroxide, and the concentration is 1.0-1.5wt%; the polishing temperature is 50-60 ℃.
4. The method for monitoring a TOPCon cell tunnel oxide passivation contact process according to claim 1, wherein the surface reflectivity of the silicon wafer polished in S1 is not less than 42%.
5. The monitoring method of the TOPCON battery tunneling oxide passivation contact process according to claim 1, wherein the oxidation temperature of the tunneling oxide prepared in S2 is 600+/-15 ℃; the thicknesses of the tunneling oxide layer and the polysilicon passivation layer are respectively 1-2nm and 60-200nm.
6. The monitoring method of the TOPCON battery tunneling oxide passivation contact process according to claim 1, wherein the deposition temperature of the phosphorus doping process in S2 is 890+/-10 ℃ and the cooling temperature is 700+/-10 ℃; s2, the square resistance of the silicon wafer obtained by doping phosphorus into the silicon wafer is 36+/-5 omega/mouth.
7. The monitoring method of the TOPCON cell tunneling oxide passivation contact process according to claim 1, wherein in S3, silicon nitride anti-reflection films are plated on both sides of the monocrystalline silicon wafer, and the silicon nitride anti-reflection films comprise a low refractive index silicon nitride film, a high refractive index silicon nitride film and a silicon oxynitride film; the coating temperature is 480-540 ℃.
8. The monitoring method of the TOPCON battery tunneling oxide passivation contact process according to claim 1, wherein the thickness of the film coated on the monocrystalline silicon piece in S3 is 65+/-5 nm, and the refractive index after film coating is 2.0-2.1.
9. The monitoring method of the TOPCON battery tunneling oxide passivation contact process according to claim 1, wherein the belt speed of the conveyor belt during S4 high temperature sintering is 10-15m/min; the temperature of each temperature zone of high-temperature sintering is set as follows: 400-800 ℃.
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| CN115241083A (en) * | 2022-07-29 | 2022-10-25 | 英利能源发展有限公司 | Method for rapidly monitoring stability of polishing solution |
| CN115513313A (en) * | 2022-09-27 | 2022-12-23 | 英利能源发展有限公司 | Single-side texturing monocrystalline silicon wafer preparation method of TOPCon battery piece |
| CN115832069A (en) * | 2023-02-13 | 2023-03-21 | 通威太阳能(眉山)有限公司 | Passivation contact structure, solar cell, preparation method and photovoltaic module |
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