CN116024650A - Crystal pulling process and monocrystalline silicon - Google Patents
Crystal pulling process and monocrystalline silicon Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 292
- 238000000034 method Methods 0.000 title claims abstract description 65
- 230000008569 process Effects 0.000 title claims abstract description 61
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 47
- 238000001816 cooling Methods 0.000 claims abstract description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000001514 detection method Methods 0.000 claims abstract description 4
- 238000006073 displacement reaction Methods 0.000 claims description 12
- 238000010008 shearing Methods 0.000 abstract description 7
- 230000008859 change Effects 0.000 abstract description 6
- 230000001276 controlling effect Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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Abstract
The invention discloses a crystal pulling process and monocrystalline silicon, wherein the crystal pulling process comprises the following steps: presetting a preset diameter of a crystal; after the weight of the crystal is detected, the crucible elevation of the crucible is adjusted according to the weight of the crystal; after detecting the length of the crystal, adjusting the position of the water cooling screen to the position of the equal-diameter liquid port distance according to the length of the crystal; after detecting the diameter of the crystal, adjusting the preset lifting pull speed of the lifting pull head according to the diameter of the crystal; after the length of the detection crystal is the preset length, the preset lifting pull speed of the lifting head is adjusted to the set highest pull speed. According to the crystal pulling process, the crucible is automatically set to be raised according to the change of the weight of the crystal, so that the position of the liquid level in the crucible relative to the heater is kept unchanged, the water cooling screen slowly descends to the equal-diameter liquid opening distance position, after the length of the crystal is the preset length, the preset lifting pull speed of the lifting pull head is slowly lifted to the set highest pull speed, and the breaking bud phenomenon of 0-500mm of the crystal head caused by shearing stress in the temperature gradient forming process is relieved.
Description
Technical Field
The invention relates to the technical field of crystal pulling, in particular to a crystal pulling process and monocrystalline silicon.
Background
In the process of pulling a single crystal, the breaking bud is one of the main problems of single crystal pulling failure, and the existing theory considers that the main factor of the breaking bud is caused by excessive impurities in a quartz crucible, especially in the initial drawing process of constant diameter after shoulder turning, once the setting of crystal turning speed (crystal turning) and crucible rotation speed (crucible turning) is unreasonable, the friction between molten silicon and the quartz crucible is increased, so that the impurities in the quartz crucible enter the silicon liquid, and the breaking bud is easy to cause. In the drawing process, if the temperature setting of the thermal field is unreasonable, the aggregation of impurities at the head of the crystal is accelerated by the heat convection of the solution, the crystal without growth stripes is easy to grow, and the risk of breaking the buds is further accelerated. Once the bud is broken, not only is production interrupted, but also the waste of resources is caused, and the production cost is increased. The existing process is to lift the crucible to the equal diameter liquid port distance to provide an equal diameter temperature gradient to realize the process of high-efficiency crystal pulling on the basis of fixed water cooling screen position; in the prior art, a constant diameter temperature gradient is formed by lifting the crucible, but the whole melt can generate great temperature oscillation along with the lifting of the crucible in the process, so that the phenomenon of high head broken bud ratio in the constant diameter process with overlong relaxation time is caused.
Disclosure of Invention
In view of the above, the invention provides a crystal pulling process and monocrystalline silicon, which can alleviate the breaking of the head 0-500mm caused by shearing stress in the formation process of temperature gradient.
The invention provides a crystal pulling process, which comprises the following steps:
presetting a preset diameter of a crystal;
after detecting the weight of the crystal, adjusting the crucible lifting of the crucible according to the weight of the crystal;
after detecting the length of the crystal, adjusting the position of the water cooling screen to the position of the equal-diameter liquid port distance according to the length of the crystal;
after detecting the diameter of the crystal, adjusting the preset lifting pull speed of the lifting pull head according to the diameter of the crystal;
after detecting that the length of the crystal is a preset length, adjusting the preset lifting pull speed of the lifting head to the set highest pull speed.
Optionally, the detecting the weight of the crystal includes: and a weight sensor for controlling the single crystal furnace detects the weight of the crystal.
Optionally, the adjusting the crucible elevation of the crucible according to the weight of the crystal includes: the crucible lifting of the crucible is the descending height of the liquid in the crucible in unit time, and the liquid level height of the liquid in the crucible is calculated by the following formula: m is M H ＝M h0-h Wherein M is H The mass of the crystal with the equal diameter length of H; m is M h0-h The mass is reduced for the solution when the level in the crucible drops from h0 to h.
Optionally, the detecting the length of the crystal includes: and controlling a position sensor to detect the displacement of the pull head, wherein the difference value between the displacement of the pull head and the initial position of the pull head is the crystal length.
Optionally, when the length of the crystal is 0-1500mm, the descending rate of the water cooling screen gradually decreases in the process of growing the length of the crystal; when the length of the crystal is more than 1500mm, the position of the water cooling screen is unchanged.
Optionally, the adjusting the position of the water cooling screen according to the length of the crystal includes:
when the length of the crystal is 0-50mm, the initial position of the water cooling screen is 20mm, and the position of the water cooling screen is lowered by 0.1mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 50-150mm, the position of the water cooling screen is lowered by 0.05mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 150-600mm, the position of the water cooling screen is lowered by 0.013mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 600-1000mm, the position of the water cooling screen is lowered by 0.005mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 1000-1500mm, the position of the water cooling screen is lowered by 0.004mm every 1mm of the length of the crystal is increased.
Optionally, the detecting the diameter of the crystal includes: and controlling an image acquisition device to detect the diameter of the crystal.
Optionally, when the length of the crystal is 0-300mm, the crystal grows freely, the actual pulling speed of the pulling head is smaller than the preset pulling speed of the pulling head, and the actual pulling speed is 75-85mm/h; when the length of the crystal is greater than 300mm, the preset lifting pull speed of the lifting head is increased.
Optionally, when the length of the crystal is 0-1500mm, the pull rate of the pull head gradually decreases during the growth of the length of the crystal; when the length of the crystal is 1500-2500mm, the preset lifting pull speed of the lifting head is kept unchanged; when the length of the crystal is more than 2500mm, the preset lifting pull speed of the lifting head is gradually reduced in the length growing process of the crystal.
Optionally, the adjusting the preset lifting speed of the lifting head includes:
when the length of the crystal is 0-50mm, the preset lifting pull speed of the lifting head is increased by 0.1mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 50-150mm, the preset lifting pull speed of the lifting head is increased by 0.03mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 150-300mm, the preset lifting pull speed of the lifting head is increased by 0.027mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 300-600mm, the preset lifting pull speed of the lifting head is increased by 0.013mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 600-1000mm, the preset lifting pull speed of the lifting head is increased by 0.0125mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 1000-1500mm, the preset lifting pull speed of the lifting head is increased by 0.006mm every 1mm of the length of the crystal.
Optionally, the set maximum pull rate is 112mm/h.
The invention also provides monocrystalline silicon, which is prepared by the crystal pulling process.
Compared with the prior art, the crystal pulling process and the monocrystalline silicon provided by the invention at least realize the following beneficial effects:
the invention provides a crystal pulling process and monocrystalline silicon, wherein the crystal pulling process is used for slowly reducing a water cooling screen to an equal-diameter liquid port distance in a mode of ensuring that the relative positions of liquid in a crucible and a heater are unchanged, so that the rapid and stable growth of crystals is realized. According to the embodiment, the crucible is automatically set to be raised according to the change of the weight of the crystal, so that the position of the liquid level of the liquid in the crucible relative to the heater is kept unchanged, at the moment, the water cooling screen slowly descends to the equal-diameter liquid port distance position, after the length of the crystal is the preset length, the preset lifting pull speed of the lifting pull head is slowly lifted to the set highest pull speed, the breaking bud phenomenon of 0-500mm of the crystal head caused by shearing stress in the temperature gradient forming process is relieved, the breaking rate of 0-500mm of the equal-diameter length of the crystal is reduced to 15%, the oxygen content of the single crystal can be reduced, and meanwhile, the crystal pulling state in the furnace is kept stable.
Of course, it is not necessary for any one product embodying the invention to achieve all of the technical effects described above at the same time.
Other features of the present invention and its advantages will become apparent from the following detailed description of exemplary embodiments of the invention, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
FIG. 1 is a flow chart of a crystal pulling process provided in this embodiment;
fig. 2 is a schematic structural diagram of a single crystal silicon according to the present embodiment.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless it is specifically stated otherwise.
The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of exemplary embodiments may have different values.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.
Referring to FIG. 1, FIG. 1 is a flow chart of a crystal pulling process provided in this embodiment; the embodiment provides a crystal pulling process, which comprises the following steps:
s1, presetting a preset diameter of a crystal;
specifically, the preset diameter of the crystal in this embodiment ranges from 249mm to 253mm, and the preset diameter of the crystal may be 249mm, 250mm, 251mm, 252mm or 253mm;
s2, after the weight of the crystal is detected, the crucible elevation of the crucible is adjusted according to the weight of the crystal;
specifically, in this embodiment, a weight sensor controlling the single crystal furnace detects the weight of the crystal. The weight sensor may be of the type ZRN603A. According to the embodiment, the crucible is automatically set to be raised according to the change of the weight of the crystal, so that the position of the liquid level in the crucible relative to the heater is unchanged.
S3, after detecting the length of the crystal, adjusting the position of the water cooling screen to the position of the equal-diameter liquid port distance according to the length of the crystal;
specifically, in this embodiment, the length of the detected crystal may be detected by controlling the position sensor of the single crystal furnace to detect the displacement of the pull head, and the difference between the displacement and the initial position of the pull head is the length of the crystal; the model of the position sensor may be AH201; that is, the seed crystal is fixed on the pulling head, the pulling head pulls and lifts to grow crystals, the lifting distance of the pulling head is the length of the crystals, the initial position of the pulling head is recorded, the position sensor controlling the single crystal furnace detects the displacement of the pulling head, and the difference between the detected displacement of the pulling head and the initial position of the pulling head is the length of the crystals.
S4, after the diameter of the crystal is detected, adjusting the preset lifting pull speed of the lifting pull head according to the diameter of the crystal;
specifically, the diameter of the detection crystal in this embodiment may be controlled by controlling the diameter of the detection crystal of the image acquisition device, and the image acquisition device may specifically be a CCD (charge coupled device, chinese full name: charge coupled device, may be referred to as a CCD image sensor) camera; according to the difference value between the actual diameter of the crystal detected by the CCD camera and the preset diameter of the crystal, the preset lifting pull speed of the lifting head is calculated, and the specific formula is as follows:
v＝C+Kp·e+Ki·∫edt+Kd·(de/dt)；
wherein v is the preset lifting pull speed of the lifting head; e is the difference between the preset diameter and the actual diameter of the crystal; kp, ki, kd are the tuning parameters of PID (Proportion, integration, differentiation, differential proportional integral derivative) controller; c is a constant in a control system of the single crystal furnace; t is time;
when the length of the crystal is 0mm, kp may be 3, ki may be 0.05, and Kd may be 3; when the length of the crystal is 1500mm, kp may be 3, ki may be 0.05, and Kd may be 2.8; when the length of the crystal is 4000mm, kp may be 3, ki may be 0.05, and Kd may be 2.4; the values of Kp and Ki remain unchanged during the growth of the crystal length; when the crystal length is 0-1500mm, the value of Kd is reduced from 3 to 2.8 at a constant speed along with the increase of the crystal length; when the crystal length is 1500-4000mm, the value of Kd is reduced from 2.8 to 2.4 at a constant speed along with the increase of the crystal length.
S5, after detecting that the length of the crystal is the preset length, adjusting the preset lifting pull speed of the lifting pull head to the set highest pull speed.
Specifically, in this embodiment, the length of the detected crystal may be detected by controlling the position sensor of the single crystal furnace to detect the displacement of the pull head, and the difference between the displacement and the initial position of the pull head is the length of the crystal; that is, the seed crystal is fixed on the pulling head, the pulling head pulls and lifts to grow crystals, the lifting distance of the pulling head is the length of the crystals, the initial position of the pulling head is recorded, the position sensor controlling the single crystal furnace detects the displacement of the pulling head, and the difference between the detected displacement of the pulling head and the initial position of the pulling head is the length of the crystals. The preset length of the crystal is 300-800mm, the preset length of the crystal can be 300mm, 500mm, 600mm or 800mm, and the highest pulling speed can be 112mm/h.
According to the embodiment, the crystal pulling process provided by the embodiment at least realizes the following beneficial effects:
the embodiment provides a crystal pulling process, which slowly reduces a water cooling screen to an equal-diameter liquid port distance by ensuring that the relative position of liquid in a crucible and a heater is unchanged, so as to realize the rapid and stable growth process of crystals. According to the embodiment, the crucible is automatically set to be raised according to the change of the weight of the crystal, so that the position of the liquid level of the liquid in the crucible relative to the heater is kept unchanged, at the moment, the water cooling screen slowly descends to the equal-diameter liquid port distance position, after the length of the crystal is the preset length, the preset lifting pull speed of the lifting pull head is slowly lifted to the set highest pull speed, the breaking bud phenomenon of 0-500mm of the crystal head caused by shearing stress in the temperature gradient forming process is relieved, the breaking rate of 0-500mm of the equal-diameter length of the crystal is reduced to 15%, the oxygen content of the single crystal can be reduced, and meanwhile, the crystal pulling state in the furnace is kept stable.
In some alternative embodiments, adjusting the crucible elevation of the crucible based on the weight of the crystal includes: the crucible lifting of the crucible is the descending height of the liquid in the crucible in unit time, and the calculation formula of the liquid level height of the liquid in the crucible is as follows: m is M H ＝M h0-h Wherein M is H Is equal-diameter length of crystalMass when H; m is M h0-h The mass is reduced for the solution when the level in the crucible drops from h0 to h.
Specifically, according to the principle of conservation of mass, the mass and the liquid level in the crucible are equal to H when the constant diameter length of the crystal is H 0 The mass of the solution decreases when it drops to h, which is equal, the following formula can be derived:
M H ＝M h0-h ；
h＝g(H)；
wherein M is H The mass of the crystal with the equal diameter length of H; m is M h0-h Reducing the mass of the solution when the liquid level in the crucible is reduced from h0 to h; ρ l Is the density of the liquid in the crucible; v (V) l Is the volume of liquid in the crucible; d (D) l Is the diameter of the liquid in the crucible; ρ s Is the density of the crystals; v (V) s Is the volume of the crystal; d (D) s Is the diameter of the crystal; h is the isodiametric length H of the crystal; h is the liquid level h of the liquid in the crucible; h is a 0 Is the liquid level h of the liquid in the crucible 0 The method comprises the steps of carrying out a first treatment on the surface of the g (H) is the crucible lift of the crucible;
the height of the liquid level of the liquid in the crucible in unit time is the lifting speed of the crucible;
in some alternative embodiments, the rate of decrease of the water-cooled screen gradually decreases during the growth of the length of the crystal when the length of the crystal is 0-1500 mm; when the length of the crystal is more than 1500mm, the position of the water cooling screen is unchanged.
Specifically, in this embodiment, adjusting the position of the water-cooled screen according to the length of the crystal specifically includes:
when the length of the crystal is 0-50mm, the initial position of the water cooling screen is 20mm, and when the length of the crystal is increased by 1mm, the position of the water cooling screen is reduced by 0.1mm;
when the length of the crystal is 50-150mm, the position of the water cooling screen is lowered by 0.05mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 150-600mm, the position of the water cooling screen is lowered by 0.013mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 600-1000mm, the position of the water cooling screen is lowered by 0.005mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 1000-1500mm, the position of the water cooling screen is lowered by 0.004mm every 1mm of the length of the crystal.
According to the length adjustment water-cooling screen position of crystal, improve the stability of control, in the crystal growth process, the length of crystal increases gradually, and the position of water-cooling screen descends gradually to the decline rate of water-cooling screen reduces gradually, and liquid in the crucible is unchangeable with the heater relative position, slowly descends the water-cooling screen, makes the crystal grow steadily fast, adjusts the temperature field, and then has slowed down the disconnected bud phenomenon of crystal head 0-500mm that the shearing stress caused in the temperature gradient formation process.
In some alternative embodiments, when the length of the crystal is 0-300mm, the crystal grows freely, the actual pulling speed of the pulling head is smaller than the preset lifting pulling speed of the Yu Di pulling head, and the actual pulling speed is 75-85mm/h; when the length of the crystal is more than 300mm, the preset lifting pull speed of the lifting head is increased.
Specifically, when the length of the crystal is less than or equal to 300mm, the single crystal furnace control system does not carry out closed loop investment on the growth control of the crystal, and the actual pulling speed of the pulling head is 75-85mm/h; when the length of the crystal is greater than 300mm, the single crystal furnace control system inputs a closed loop for the growth of the crystal, the closed loop control system realizes the actual pulling speed lifting process of the lifting head, and the liquid port distance value is detected to be greater than or equal to 20mm through a CCD camera in the whole process, so that the process is ensured to be safe and reliable. The crystal length variable is calculated by the position difference value of a pulse encoder in an upper shaft pulling system of the single crystal furnace, and because the crystal growth environment is complex and changeable, in order to ensure that the crystal diameter meets the requirement in the production process, the target diameter, namely the preset diameter, is set, and the PID controller is used for real-time adjustment and control, so that the instantaneous pulling speed change amplitude is larger. However, in order to achieve efficient production process and optimal cost, the growth speed of the crystal is generally required to be controlled, and the system adjusts the temperature field through the difference value between the actual average pulling speed and the set pulling speed so as to achieve the growth speed of the crystal set in the slope table, thereby achieving efficient production.
In some alternative embodiments, when the length of the crystal is 0-1500mm, the pull rate of the pull head gradually decreases during the growth of the length of the crystal; when the length of the crystal is 1500-2500mm, the preset lifting pull speed of the lifting head is kept unchanged; when the length of the crystal is more than 2500mm, the preset lifting pull speed of the lifting head is gradually reduced in the length growing process of the crystal. In the crystal growth process, the position of the pull head is continuously raised, the growth speed of the crystal is controlled by the pull speed of the pull head, and the temperature field is regulated to achieve the set growth speed of the crystal, so that the high-efficiency production is realized; when the length of the crystal is 0-1500mm, the pulling rate of the pulling head is gradually reduced in the length growing process of the crystal, the pulling rate is gradually increased more gradually, the growth interface of the crystal is more stable, and the breaking bud phenomenon of 0-500mm at the head of the crystal caused by shearing stress in the temperature gradient forming process is slowed down; when the length of the crystal is 1500-2500mm, the crystal grows stably, and the preset lifting pull speed of the lifting head is unchanged; when the length of the crystal is greater than 2500mm, the preset lifting pull speed of the lifting head is gradually reduced, and the influence of broken wires is relieved.
Specifically, in this embodiment, the preset lifting speed of the lifting head is adjusted, which specifically includes:
when the length of the crystal is 0-50mm, the preset lifting pull speed of the lifting head is increased by 0.1mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 50-150mm, the preset lifting pull speed of the lifting head is increased by 0.03mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 150-300mm, the preset lifting pull speed of the lifting head is increased by 0.027mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 300-600mm, the preset lifting pull speed of the lifting head is increased by 0.013mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 600-1000mm, the preset lifting pull speed of the lifting head is increased by 0.0125mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 1000-1500mm, the preset lifting pull speed of the lifting pull head is increased by 0.006mm every 1mm of the length of the crystal.
The following table is a table of the isodiametric slope of the crystal.
Referring to fig. 2, fig. 2 is a schematic view showing the structure of a single crystal silicon according to the present embodiment; the present embodiment also provides a single crystal silicon made by the crystal pulling process of any of the above embodiments.
Specifically, the monocrystalline silicon provided in this embodiment includes a seeding portion 1, a shoulder portion 2, a shoulder portion 3, an isodiametric portion 4, and a terminating portion 5. The monocrystalline silicon provided by the embodiment is prepared by adopting the crystal pulling process of any one of the embodiments, so that the phenomenon of breaking off the bud of the head part of the crystal by 0-500mm can be avoided, and the quality of the prepared monocrystalline silicon is better.
According to the embodiment, the crystal pulling process and the monocrystalline silicon provided by the invention have the following beneficial effects:
the invention provides a crystal pulling process and monocrystalline silicon, wherein the crystal pulling process is used for slowly reducing a water cooling screen to an equal-diameter liquid port distance in a mode of ensuring that the relative positions of liquid in a crucible and a heater are unchanged, so that the rapid and stable growth of crystals is realized. According to the embodiment, the crucible is automatically set to be raised according to the change of the weight of the crystal, so that the position of the liquid level of the liquid in the crucible relative to the heater is kept unchanged, at the moment, the water cooling screen slowly descends to the equal-diameter liquid port distance position, after the length of the crystal is the preset length, the preset lifting pull speed of the lifting pull head is slowly lifted to the set highest pull speed, the breaking bud phenomenon of 0-500mm of the crystal head caused by shearing stress in the temperature gradient forming process is relieved, the breaking rate of 0-500mm of the equal-diameter length of the crystal is reduced to 15%, the oxygen content of the single crystal can be reduced, and meanwhile, the crystal pulling state in the furnace is kept stable.
While certain specific embodiments of the invention have been described in detail by way of example, it will be appreciated by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (12)
1. A crystal pulling process, comprising:
presetting a preset diameter of a crystal;
after detecting the weight of the crystal, adjusting the crucible lifting of the crucible according to the weight of the crystal;
after detecting the length of the crystal, adjusting the position of the water cooling screen to the position of the equal-diameter liquid port distance according to the length of the crystal;
after detecting the diameter of the crystal, adjusting the preset lifting pull speed of the lifting pull head according to the diameter of the crystal;
after detecting that the length of the crystal is a preset length, adjusting the preset lifting pull speed of the lifting head to the set highest pull speed.
2. A crystal pulling process as defined in claim 1, wherein: the weight of the detection crystal comprises: and a weight sensor for controlling the single crystal furnace detects the weight of the crystal.
3. A crystal pulling process as defined in claim 1, wherein: the crucible lifting of the crucible is adjusted according to the weight of the crystal, and the method comprises the following steps: the crucible lifting of the crucible is the descending height of the liquid in the crucible in unit time, and the liquid level height of the liquid in the crucible is calculated by the following formula: m is M H ＝M h0-h Wherein M is H The mass of the crystal is equal to the mass when the equal diameter length of the crystal is H; m is M h0-h For the height of the liquid level in the crucible to be from h 0 The solution at the time of drop to h reduces the mass.
4. A crystal pulling process as defined in claim 1, wherein: the detecting the length of the crystal comprises: and controlling a position sensor to detect the displacement of the pull head, wherein the difference value between the displacement of the pull head and the initial position of the pull head is the crystal length.
5. A crystal pulling process as defined in claim 1, wherein: when the length of the crystal is 0-1500mm, the descending rate of the water cooling screen is gradually reduced in the process of increasing the length of the crystal; when the length of the crystal is more than 1500mm, the position of the water cooling screen is unchanged.
6. A crystal pulling process as defined in claim 5, wherein: the adjusting the position of the water cooling screen according to the length of the crystal comprises the following steps:
when the length of the crystal is 0-50mm, the initial position of the water cooling screen is 20mm, and the position of the water cooling screen is lowered by 0.1mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 50-150mm, the position of the water cooling screen is lowered by 0.05mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 150-600mm, the position of the water cooling screen is lowered by 0.013mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 600-1000mm, the position of the water cooling screen is lowered by 0.005mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 1000-1500mm, the position of the water cooling screen is lowered by 0.004mm every 1mm of the length of the crystal is increased.
7. A crystal pulling process as defined in claim 1, wherein: the detecting the diameter of the crystal comprises: and controlling an image acquisition device to detect the diameter of the crystal.
8. A crystal pulling process as defined in claim 1, wherein: when the length of the crystal is 0-300mm, the crystal grows freely, the actual pulling speed of the pulling head is smaller than the preset lifting pulling speed of the pulling head, and the actual pulling speed is 75-85mm/h; when the length of the crystal is greater than 300mm, the preset lifting pull speed of the lifting head is increased.
9. A crystal pulling process as defined in claim 1, wherein: when the length of the crystal is 0-1500mm, the pull rate of the pull head is gradually reduced in the process of increasing the length of the crystal; when the length of the crystal is 1500-2500mm, the preset lifting pull speed of the lifting head is kept unchanged; when the length of the crystal is more than 2500mm, the preset lifting pull speed of the lifting head is gradually reduced in the length growing process of the crystal.
10. A crystal pulling process as defined in claim 9, wherein: the adjusting the preset lifting pull speed of the lifting head comprises the following steps:
when the length of the crystal is 0-50mm, the preset lifting pull speed of the lifting head is increased by 0.1mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 50-150mm, the preset lifting pull speed of the lifting head is increased by 0.03mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 150-300mm, the preset lifting pull speed of the lifting head is increased by 0.027mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 300-600mm, the preset lifting pull speed of the lifting head is increased by 0.013mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 600-1000mm, the preset lifting pull speed of the lifting head is increased by 0.0125mm when the length of the crystal is increased by 1mm;
when the length of the crystal is 1000-1500mm, the preset lifting pull speed of the lifting head is increased by 0.006mm every 1mm of the length of the crystal.
11. A crystal pulling process as defined in claim 1, wherein: the set maximum pull rate is 112mm/h.
12. Single crystal silicon produced by a crystal pulling process as claimed in any one of claims 1 to 11.
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