CN116009157A - Mode-jump-preventing optical path system for silicon optical chip and method thereof - Google Patents
Mode-jump-preventing optical path system for silicon optical chip and method thereof Download PDFInfo
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Abstract
The invention provides a mode-jump prevention optical path system for a silicon optical chip and a method thereof, wherein the mode-jump prevention optical path system comprises the following steps: the 2MHzDither generating module is used for sending 2MHz square wave scrambling signal data insensitive to temperature and transmitting the square wave scrambling signal data to the operational amplification module; the operational amplification module receives the square wave scrambling signal data of 2MHz, which is insensitive to temperature, to generate a Dither signal, and flexibly adjusts the duty ratio of the Dither signal according to the requirement; resistance module: the resistance module is used for controlling the current intensity of the Dither signal to be 1% -5% of the bias current amplitude; the DFB laser module is used for loading the Dither signal after receiving the control current intensity into the DFB laser so as to prevent the mode jump of the DFB laser; the technical problems that the DFB laser is easy to generate mode jump, component interference, large heat productivity of the DFB laser and the like are avoided, the space occupied by an optical path system is reduced, and the stable use of the DFB laser is ensured.
Description
Technical Field
The invention relates to the technical field of silicon optical chips, in particular to a mode-jump-preventing optical path system for a silicon optical chip and a mode-jump-preventing optical path method for the silicon optical chip.
Background
At present, the optical communication industry enters a rapid development stage, and an optical module plays a central role in the optical communication industry. As the optical module rate is higher, silicon optical chips with high integration are more and more favored. The scheme of adopting the silicon optical chip can provide more possibility for the placement of other parts.
The existing silicon optical chip has the following technical problems:
1) The silicon optical chip generally needs an external high-power Distributed Feedback (DFB) laser, and the high-power Distributed Feedback (DFB) laser is easy to have the problem of mode-jump;
2) The high-power Distributed Feedback (DFB) laser has large heating value, and has a heat dissipation problem because the distance between the high-power Distributed Feedback (DFB) laser and chips such as a silicon optical chip is too short;
3) The distance between the coupled optical waveguides provided for the laser is usually smaller, such as 250 μm, and the distance between adjacent optical paths of the optical path system in the conventional free space coupling scheme is usually 1000 μm, which has the problem of component interference;
4) Aiming at the problem that the space between the silicon optical chip and the optical waveguide is smaller, a feasible solution cannot be provided, and the space occupied by an optical path system is increased.
Disclosure of Invention
In order to solve the technical problems, the mode-jump prevention optical path system and the mode-jump prevention optical path system method for the silicon optical chip provided by the invention avoid the technical problems that a DFB laser is easy to jump mode, component interference and large in heating value of the DFB laser and the like, reduce the occupied space of the optical path system and ensure the stable use of the DFB laser.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a mode-jump prevention optical path system for a silicon optical chip, comprising:
the 2MHzDither generation module is used for sending 2MHz square wave scrambling signal data insensitive to temperature and transmitting the square wave scrambling signal data to the operational amplification module;
the operational amplification module receives the square wave scrambling signal data of 2MHz, which is insensitive to temperature, to generate Dither signals, and flexibly adjusts the duty ratio of the Dither signals according to the requirement;
resistance module: the resistance module is used for controlling the current intensity of the Dither signal to be 1% -5% of the bias current amplitude;
and the DFB laser module is used for loading the Dither signal after receiving the control current intensity into the DFB laser so as to prevent the mode jump of the DFB laser.
The mode-jump prevention optical path system and the mode-jump prevention optical path method for the silicon optical chip provided by the invention avoid the technical problems that the DFB laser is easy to jump mode, the components interfere, the heating value of the DFB laser is large, the occupied space of the optical path system is reduced, and the stable use of the DFB laser is ensured.
As a preferred technical scheme, the method comprises the following steps: the semiconductor refrigerator, semiconductor refrigerator's cold junction is one side, semiconductor refrigerator's another side is semiconductor refrigerator's hot junction, DFB laser set up in semiconductor refrigerator's cold junction is last, semiconductor refrigerator's cold junction is equipped with thermistor.
As a preferred technical solution, the semiconductor refrigerator includes:
the resistance testing module of the thermistor is used for testing resistance data of the thermistor and transmitting the resistance data of the thermistor to the temperature module of the laser;
the temperature module of the laser is used for calculating the temperature data of the laser according to the received resistance data of the measured thermistor and transmitting the temperature data of the laser to the current control module of the semiconductor refrigerator;
the current control module of the semiconductor refrigerator is used for regulating and controlling the current of the semiconductor refrigerator according to the temperature data of the laser so as to realize regulating and controlling the temperature of the DFB laser.
As a preferred technical scheme, the DFB laser is configured to emit divergent laser, and a collimating lens, an isolator, and a polarization beam splitter prism are sequentially disposed in an incident direction of the divergent laser, so that a split optical path is two paths, and the two paths are a transverse electric mode optical signal and a transverse magnetic mode optical signal.
As the preferable technical scheme, the converging lens and the multi-beam splitter chip are sequentially arranged in the incidence direction of the transverse electric mode optical signals so as to uniformly divide 1-path transverse electric mode optical signals into multiple paths of transverse electric mode optical signals, the multi-beam splitter chip is arranged on the side face of the waveguide end of the silicon optical chip, the multiple paths of transverse electric mode optical signals enter the light-entering waveguide of the silicon optical chip through the light-exiting waveguide so as to realize that 1 DFB laser can provide multiple light-entering transverse electric mode optical signals, and the light waveguide spacing separated by the multi-beam splitter chip is matched with the light-entering waveguide spacing of the silicon optical chip.
As the preferable technical scheme, a photodiode chip is arranged in the incidence direction of the transverse magnetic mode optical signal, the center of the photodiode chip is positioned on the optical path optical axis of the transverse magnetic mode optical signal, the photodiode chip is used for converting the optical signal into an electric signal, an optical signal intensity monitoring module is arranged on the photodiode chip, and the optical signal intensity monitoring module is used for monitoring the intensity of the transverse magnetic mode optical signal.
As a preferred technical scheme, the method comprises the following steps: the transverse electric mode optical signal intensity estimation module is used for calculating transverse electric mode optical signal intensity data according to the received transverse magnetic mode optical signal intensity data and transmitting the transverse electric mode optical signal intensity data to the working current control module of the DFB laser;
the working current control module of the DFB laser regulates and controls the working current of the DFB laser according to the intensity of the received transverse electric mode optical signal so as to realize the adjustment of the light intensity of the optical signal emitted by the DFB laser.
The invention provides a method for preventing a mode jump light path of a silicon optical chip, which comprises the following steps:
s1, sending out 2MHz square wave scrambling signal data insensitive to temperature;
s2, generating a Dither signal through square wave scrambling signal data of 2MHz, which is insensitive to temperature, and flexibly adjusting the duty ratio of the Dither signal according to the requirement;
s3, controlling the current intensity of the D ither signal to be 1% -5% of the bias current amplitude;
s4, loading the Dither signal after controlling the current intensity in the DFB laser to prevent the mode jump of the DFB laser.
As a preferred technical scheme, the method further comprises the following steps:
s5, divergent laser emitted by a D ither signal DFB laser is loaded, the incidence of the divergent laser is changed into collimated light through a collimating lens, then the collimated light passes through an isolator, and finally the collimated light passes through a polarization beam splitting prism to be divided into two paths, wherein the two paths are a transverse electric mode optical signal and a transverse magnetic mode optical signal;
the polarization beam splitter prism separates and transmits the transverse electric mode optical signals, the transverse electric mode optical signals are converged into an optical input waveguide of the multi-beam splitter chip through the converging lens, 1 path of transverse electric mode optical signals in the multi-beam splitter chip are uniformly divided into multiple paths of transverse electric mode optical signals, and the multiple paths of transverse electric mode optical signals enter the optical input waveguide of the silicon optical chip through the optical output waveguide so as to realize that 1 DFB laser loaded with Dither signals provides multiple paths of transverse electric mode optical signals;
the transverse magnetic mode optical signals separated and reflected by the polarization beam splitter prism are vertically folded to enter the photodiode chip, the transverse magnetic mode optical signals entering the photodiode chip are converted into electric signals, the intensity of the transverse magnetic mode optical signals is monitored, the intensity of the transverse magnetic mode optical signals is calculated by multiplying the calculated coefficient, and the working current of the DFB laser is regulated according to the intensity of the transverse electric mode optical signals so as to regulate the light intensity of the optical signals of the DFB laser.
As a preferred technical solution, step S4 further comprises the following steps:
the Dither signal loaded DFB laser is placed on the cold end of the semiconductor refrigerator, a thermistor is arranged at the cold end of the semiconductor refrigerator, the temperature of the DFB laser is calculated by measuring the resistance value of the thermistor, and the current of the semiconductor refrigerator is regulated according to the temperature of the DFB laser so as to regulate the temperature of the DFB laser.
The invention provides a mode-jump prevention optical path system for a silicon optical chip and a method thereof, aiming at the problem of mode-jump of a high-power DFB laser, dither signals (disturbance signals) are loaded into the laser to prevent the mode-jump; aiming at the problem that the space between the silicon optical chip and the optical waveguide is smaller, a chip with a plurality of optical splitters is adopted for transition, so that the space occupied by an optical path system is greatly reduced; aiming at the heat dissipation problem, the distance between the DFB laser and other chips is increased, a heat source is physically isolated, and a TEC (semiconductor refrigerator) is placed below the DFB laser to control the heat; and a PBS (polarization beam splitter) is also used for separating out useless TM mode (transverse magnetic mode) optical signals in the optical path for monitoring feedback, so that the light intensity of the optical signals of the DFB laser is regulated, and the stable use of the DFB laser is ensured.
Drawings
FIG. 1 is a schematic diagram of a Dither signal loading circuit according to the present invention;
FIG. 2 is a top view of the anti-mode-jump optical path system for a silicon optical chip provided by the present invention;
FIG. 3 is a side view of the anti-mode-jump optical path system for a silicon optical chip provided by the present invention;
FIG. 4 is a top view of a transverse electric mode optical signal path in an anti-mode jump optical path system for a silicon optical chip provided by the present invention;
FIG. 5 is a schematic diagram of a silicon optical chip and a multi-splitter chip provided by the present invention;
FIG. 6 is a top view of a transverse magnetic mode optical signal path in an anti-mode jump optical path system for a silicon optical chip provided by the present invention;
FIG. 7 is a schematic spectrum diagram of a provided normal DFB laser
FIG. 8 is a schematic diagram of a spectrum of a DFB laser provided with mode hops occurring;
FIG. 9 is a schematic diagram of a spectrum of a DFB laser after Dither is loaded when mode hopping occurs according to the present invention;
fig. 10 is a schematic diagram of a semiconductor refrigerator in a mode-jump preventing optical path system for a silicon optical chip according to the present invention;
FIG. 11 is a schematic diagram of polarization beam splitting prism in the anti-mode jump optical path system for silicon optical chip according to the present invention;
FIG. 12 is a circuit diagram of a semiconductor refrigerator in an anti-mode-jump optical path system for a silicon optical chip provided by the present invention;
FIG. 13 is a circuit block diagram of the anti-mode-jump optical path system for a silicon optical chip according to the present invention;
wherein, 1-2 MHzDither generating module; 2-a resistor module; 3-an operational amplification module; a 4-DFB laser; a 5-collimating lens; a 6-isolator; 7-a polarization beam splitter prism; 8-a converging lens; 9-a multi-splitter chip; 10-silicon photonics chip; 11-a photodiode chip; 12-semiconductor refrigerator; 13-cold end of semiconductor refrigerator; a hot side of the 14-semiconductor refrigerator; 15-a semiconductor refrigerator direct current power supply; 16-ceramic electrodes; 17-N-type and P-type semiconductors; 18-transverse electric mode optical signals; 19-transverse magnetic mode optical signal.
Detailed Description
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
It will be appreciated that the present invention achieves the objects of the invention by some embodiments, as shown in fig. 1, a mode-jump prevention optical path system for a silicon optical chip, comprising:
the device comprises a 2MHzDither generating module 1, wherein the 2MHzDither generating module 1 is used for sending square wave scrambling signal data of 2MHz insensitive to temperature and transmitting the square wave scrambling signal data to an operational amplification module 3;
the operational amplification module 3 receives the square wave scrambling signal data of 2MHz, which is insensitive to temperature, to generate Dither signals, and flexibly adjusts the duty ratio of the Dither signals according to the requirement;
resistor module 2: the resistor module 2 is used for controlling the current intensity of the Dither signal to be 1% -5% of the bias current amplitude;
a DFB laser module for loading the Di ther signal after receiving the control current intensity into the DFB laser 4 to enable prevention of mode-hopping of the DFB laser 4; the Dither signal is generated by a square wave scrambling signal of 2MHz, which is insensitive to temperature, through the operational amplification module 3, the duty ratio of the Dither signal can be flexibly adjusted according to the requirement, the current intensity is about 1% -5% of the amplitude of Ibias (bias current), and the D ither signal after receiving the control current intensity is loaded in the DFB laser 4, so that the mode-jump problem of the laser can be effectively prevented.
As shown in fig. 2-4, one side of the semiconductor refrigerator 12 is a cold end 13 of the semiconductor refrigerator, the other side of the semiconductor refrigerator 12 is a hot end 14 of the semiconductor refrigerator, the DFB laser 4 is arranged on the cold end 13 of the semiconductor refrigerator, and the cold end 13 of the semiconductor refrigerator is provided with a thermistor (not shown); the semiconductor refrigerator 12 includes: the resistance testing module of the thermistor is used for testing resistance data of the thermistor and transmitting the resistance data of the thermistor to the temperature module of the laser; the temperature module of the laser is used for calculating the temperature data of the laser according to the received resistance data of the measured thermistor and transmitting the temperature data of the laser to the current control module of the semiconductor refrigerator; the current control module of the semiconductor refrigerator is used for regulating and controlling the current of the semiconductor refrigerator according to the temperature data of the laser so as to realize regulating and controlling the temperature of the DFB laser; the DFB laser is used for emitting divergent laser, and a collimating lens, an isolator and a polarization beam splitting prism are sequentially arranged in the incidence direction of the divergent laser so as to realize that a beam splitting path is divided into two paths, wherein the two paths are a transverse electric mode optical signal 18 and a transverse magnetic mode optical signal 19; as shown in fig. 5, the converging lens 8 and the multi-beam splitter chip 9 are sequentially arranged in the incident direction of the transverse electric mode optical signal 18 so as to uniformly divide 1 path of transverse electric mode optical signal 18 into multiple paths of transverse electric mode optical signals 18, the multi-beam splitter chip 9 is arranged on the side surface of the waveguide end of the silicon optical chip 10, the multiple paths of transverse electric mode optical signals 18 enter the light-entering waveguide of the silicon optical chip 10 through the light-exiting waveguide so as to realize that 1 DFB laser 4 provides multiple light-entering transverse electric mode optical signals 18, and the light-entering waveguide spacing of the multi-beam splitter chip 9 is matched with the light-entering waveguide spacing of the silicon optical chip 10; as shown in fig. 6, a photodiode chip 11 is disposed in the incident direction of the transverse magnetic mode optical signal 19, the center of the photodiode chip 11 is located on the optical axis of the optical path of the transverse magnetic mode optical signal 19, the photodiode chip 11 is used for converting an optical signal into an electrical signal, and an optical signal intensity monitoring module is disposed on the photodiode chip 11 and is used for monitoring the intensity of the transverse magnetic mode optical signal; the transverse electric mode optical signal intensity calculating module is used for calculating transverse electric mode optical signal intensity data according to the received transverse magnetic mode optical signal intensity data and transmitting the transverse electric mode optical signal intensity data to the working current control module of the DFB laser; the working current control module of the DFB laser regulates and controls the working current of the DFB laser according to the intensity of the received transverse electric mode optical signal so as to realize the regulation of the light intensity of the optical signal emitted by the DFB laser 4;
the semiconductor refrigerator 12 and the silicon optical chip 10 are fixed in advance; the high-power DFB laser 4 is fixed on the semiconductor refrigerator 12; the 1X 4 optical splitter chip 9 is fixed on the side surface of the waveguide end of the silicon optical chip 10, and the 4 light-out waveguides of the 1X 4 optical splitter chip are precisely aligned with the 4 light-in waveguides of the silicon optical chip; the collimating lens 5, the isolator 6, the polarization splitting prism 7 (PBS) and the converging lens 8 are respectively fixed, the centers of the components are positioned on the optical path optical axis of the transverse electric mode optical signal 18, the photodiode chip 11 is vertically fixed, and the centers of the components are positioned on the optical path optical axis of the transverse magnetic mode optical signal 19; divergent laser emitted by a Dither signal high-power DFB laser 4 is loaded, the divergent laser is firstly changed into collimated light through a collimating lens 5, then the collimated light passes through an isolator 6 and finally passes through a polarization beam splitter prism 7 to realize that a beam splitting path is divided into two paths of light paths, one path of the two paths of light paths passes through the polarization beam splitter prism 7 to transmit and split a transverse electric mode light signal 18, the split transverse electric mode light signal 18 passes through a converging lens 8 and is converged into an optical waveguide of a 1X 4 beam splitter chip 9, 1 path of light is uniformly split into 4 paths of light inside the 1X 4 beam splitter chip 9, the 4 optical paths of light are provided by 1 DFB laser 4 through the optical waveguide entering the optical waveguide of a silicon optical chip 10, and the split transverse electric mode light signal 18 accounts for about 95 percent of total light intensity; the other of the two paths of light paths reflects and separates a transverse magnetic mode light signal 19 through a polarization beam splitter prism 7, the light path of the transverse magnetic mode light signal 19 is vertically folded and is emitted into a photodiode chip 11, the photodiode chip 11 converts the light signal into an electric signal, the transverse magnetic mode light signal entering the photodiode chip 11 is converted into the electric signal, the intensity of the transverse magnetic mode light signal is monitored, the intensity of the transverse magnetic mode light signal is calculated by multiplying the calculated coefficient by the intensity of the transverse magnetic mode light signal to calculate the intensity of the transverse electric mode light signal 18, the working current of the DFB laser 4 is regulated according to the intensity of the transverse electric mode light signal 18, and the light emitting power of the DFB laser 4 is regulated in a feedback manner so as to regulate the light intensity of the light signal of the DFB laser 4, thereby realizing the monitoring, feedback and regulation of the laser signal emitted by the DFB laser 4.
As shown in FIG. 3, the high-power DFB laser 4 is placed on the semiconductor refrigerator 12 (TEC), is far away from other chips such as the silicon optical chip 10, physically isolates a heat source, and effectively dissipates heat through the semiconductor refrigerator 12 (TEC), thereby realizing efficient heat management.
As shown in fig. 7, the normal DFB laser spectrum, single peak, SMSR (side mode suppression ratio) >36, because there is mode competition in the DFB laser 4, when the conditions such as current and temperature change, the resonant cavity length of the DFB laser 4 may change, and the center wavelength jumps, as shown in fig. 8, the center wavelength jumps from the left peak to the right peak, and at this time, double peaks appear, the SMSR is only 10-20, the optical power is reduced, and the communication quality is seriously affected (the quality of an eye diagram is affected). As shown in fig. 9, the present application loads the Dither signal to the DFB laser 4, and compensates for the signal defect by calculation when the mode jump occurs, stabilizes the optical power, and improves the SMSR (side mode suppression ratio).
As shown in fig. 10, tec= Thermo E l ectr i c Coo l er semiconductor refrigerator is made using the peltier effect of semiconductor materials; the peltier effect refers to a phenomenon in which when a direct current passes through a couple composed of two semiconductor materials, one end absorbs heat and the other end releases heat; the heavily doped N-type and P-type bismuth telluride is mainly used as semiconductor materials of TEC, and bismuth telluride elements are electrically connected in series and generate heat in parallel; the semiconductor refrigerator 12 includes N-type and P-type semiconductors 17, the N-type and P-type semiconductors 17 being connected together by electrodes and sandwiched between two ceramic electrodes 16; when current flows from the semiconductor refrigerator 12, heat generated by the current is transferred from one side of the semiconductor refrigerator 12 to the other side, a hot end and a cold end are generated on the semiconductor refrigerator 12, and note that the hot end and the cold end are not absolute, positive and negative of a direct current power supply are regulated, and the hot end and the cold end can be exchanged, namely the heating and cooling principles of the semiconductor refrigerator 12; one side of the semiconductor refrigerator 12 is a cold end 13 of the semiconductor refrigerator, the other side of the semiconductor refrigerator 12 is a hot end 14 of the semiconductor refrigerator, the DFB laser 4 is fixed on the cold end 13 of the semiconductor refrigerator, the hot end 14 of the semiconductor refrigerator is fixed on a substrate (the bottom of a shell), the semiconductor refrigerator 12 transfers heat generated by the DFB laser 4 from the cold end to the hot end, the hot end is used for radiating heat, and the hot end radiates the heat through the shell;
at the cold end 13 of the semiconductor refrigerator, and next to the DFB laser 4, a thermistor (thermal stor) is placed. Since the thermistor is immediately adjacent to the DFB laser 4, the temperature of the thermistor can be considered to be the same as the temperature of the laser; at different temperatures, the resistance of the thermistor is different, the temperature of the DFB laser 4 is calculated by measuring the resistance of the thermistor, and then the current of the semiconductor refrigerator (TEC) 12 is regulated to regulate the temperature of the laser;
the high-power DFB laser 4 is placed on the semiconductor refrigerator 12 (TEC) and is far away from other chips such as the silicon optical chip 10, so that a heat source is physically isolated, and the semiconductor refrigerator 12 (TEC) is used for effectively radiating heat, so that effective thermal management is realized;
as shown in fig. 11, the laser beam emitted from the DFB laser 4 is linear polarized light mainly including a Transverse Electric (TE) mode optical signal 18, and is mixed with a small amount of linear polarized light of a Transverse Magnetic (TM) mode optical signal 19; for the silicon optical chip 10 receiving optical signals, only the optical signal 18 of Transverse Electric (TE) mode can be received, and the optical signal 19 of Transverse Magnetic (TM) mode is useless; the polarization splitting Prism (PBS) 7 is an optical element for splitting an incident light beam into two light beams having mutually perpendicular propagation directions, and the two split light beams are both linearly polarized light beams having mutually perpendicular polarization directions, and in this case, a Transverse Electric (TE) mode light signal 18 is transmitted and a Transverse Magnetic (TM) mode light signal 19 is reflected perpendicularly.
The invention provides a method for preventing a mode jump light path of a silicon optical chip, which comprises the following steps:
s1, sending out 2MHz square wave scrambling signal data insensitive to temperature;
s2, generating a Dither signal through square wave scrambling signal data of 2MHz, which is insensitive to temperature, and flexibly adjusting the duty ratio of the Dither signal according to the requirement;
s3, controlling the current intensity of the D ither signal to be 1% -5% of the bias current amplitude;
s4, loading a D (i) signal after controlling the current intensity into the DFB laser 4 to prevent the mode jump of the DFB laser 4, placing the DFB laser 4 loaded with the Dither signal on a cold end 13 of a semiconductor refrigerator, arranging a thermistor (not shown) on the cold end 13 of the semiconductor refrigerator, calculating the temperature of the DFB laser 4 by measuring the resistance value of the thermistor (not shown), and regulating the current of the semiconductor refrigerator 12 according to the temperature of the DFB laser 4 to realize regulation of the temperature of the DFB laser 4;
s5, divergent laser emitted by a D ither signal DFB laser 4 is loaded, the incidence of the divergent laser is changed into collimated light through a collimating lens 5, then the collimated light passes through an isolator 6, and finally the collimated light passes through a polarization beam splitter prism 7 and is divided into two paths, namely a transverse electric mode optical signal 18 and a transverse magnetic mode optical signal 19;
the polarization beam splitter prism 7 separates and transmits the transverse electric mode optical signals 18, the transverse electric mode optical signals are converged by the converging lens 8 and enter the light-entering waveguide of the multi-beam splitter chip 9, 1-path transverse electric mode optical signals 18 in the multi-beam splitter chip 9 are uniformly divided into multiple paths of transverse electric mode optical signals 18, and the multiple paths of transverse electric mode optical signals 18 enter the light-entering waveguide of the silicon optical chip 10 through the light-exiting waveguide so as to realize that 1 DFB laser 4 loaded with D i ther signals provides multiple paths of light-entering transverse electric mode optical signals 18;
the transverse magnetic mode optical signal 19 separated and reflected by the polarization beam splitter prism 7 is vertically folded to enter the photodiode chip 11, the transverse magnetic mode optical signal 19 entering the photodiode chip 11 is converted into an electric signal, the intensity of the transverse magnetic mode optical signal 19 is monitored, the intensity of the transverse magnetic mode optical signal 19 is multiplied by an estimation coefficient to calculate the intensity of the transverse electric mode optical signal 18, and the working current of the DFB laser 4 is regulated according to the intensity of the transverse electric mode optical signal 18 so as to regulate the light intensity of the optical signal of the DFB laser 4.
The invention also provides a computer readable storage medium having stored thereon a computer program which when executed by a processor implements a method for mode-jump prevention optical path for a silicon optical chip as described in any of the above.
The invention provides a mode-jump prevention optical path system for a silicon optical chip and a method thereof, aiming at the problem of mode-jump of a high-power DFB laser, dither signals (disturbance signals) are loaded into the DFB laser to prevent the mode-jump; aiming at the problem that the space between the silicon optical chip and the optical waveguide is smaller, a chip with a plurality of optical splitters is adopted for transition, so that the space occupied by an optical path system is greatly reduced; aiming at the heat dissipation problem, the distance between the DFB laser and other chips is increased, a heat source is physically isolated, and a TEC (semiconductor refrigerator) is placed below the DFB laser to control the heat; and a PBS (polarization beam splitter) is also used for separating out useless TM mode (transverse magnetic mode) optical signals in the optical path for monitoring feedback, so that the light intensity of the optical signals of the DFB laser is regulated, and the stable use of the DFB laser is ensured.
It will be understood that the invention has been described in terms of several embodiments, and that various changes and equivalents may be made to these features and embodiments by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiments disclosed, but that the invention will include all modifications and equivalents falling within the scope of the claims of the present application. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (10)
1. A mode-jump prevention optical path system for a silicon optical chip, comprising:
the 2MHzDither generating module is used for sending 2MHz square wave scrambling signal data insensitive to temperature and transmitting the square wave scrambling signal data to the operational amplification module;
the operational amplification module receives the square wave scrambling signal data of 2MHz, which is insensitive to temperature, to generate a Dither signal, and flexibly adjusts the duty ratio of the Dither signal according to the requirement;
resistance module: the resistance module is used for controlling the current intensity of the Dither signal to be 1% -5% of the bias current amplitude;
and the DFB laser module is used for loading the Dither signal after receiving the control current intensity into the DFB laser so as to prevent the mode jump of the DFB laser.
2. The anti-mode jump optical path system for a silicon optical chip of claim 1, comprising: the semiconductor refrigerator, semiconductor refrigerator's cold junction is one side, semiconductor refrigerator's another side is semiconductor refrigerator's hot junction, DFB laser set up in semiconductor refrigerator's cold junction is last, semiconductor refrigerator's cold junction is equipped with thermistor.
3. The anti-mode jump optical path system for a silicon optical chip of claim 2, wherein the semiconductor refrigerator comprises:
the resistance testing module of the thermistor is used for testing resistance data of the thermistor and transmitting the resistance data of the thermistor to the temperature module of the laser;
the temperature module of the laser is used for calculating the temperature data of the laser according to the received resistance data of the measured thermistor and transmitting the temperature data of the laser to the current control module of the semiconductor refrigerator;
the current control module of the semiconductor refrigerator is used for regulating and controlling the current of the semiconductor refrigerator according to the temperature data of the laser so as to realize regulating and controlling the temperature of the DFB laser.
4. The system of claim 1, wherein the DFB laser is configured to emit divergent laser light, and a collimating lens, an isolator, and a polarization splitting prism are sequentially disposed in an incident direction of the divergent laser light to enable the split optical path to be two optical paths, and the two optical paths are a transverse electric mode optical signal and a transverse magnetic mode optical signal.
5. The anti-mode jump optical path system for silicon optical chip according to claim 4, wherein a converging lens and a multi-beam splitter chip are sequentially arranged in the incident direction of the transverse electric mode optical signal to uniformly divide 1-path transverse electric mode optical signal into multiple paths of transverse electric mode optical signals, the multi-beam splitter chip is arranged on the side face of the waveguide end of the silicon optical chip, the multiple paths of transverse electric mode optical signals enter the light-entering waveguide of the silicon optical chip through the light-exiting waveguide to realize that 1 DFB laser provides multiple light-entering transverse electric mode optical signals, and the light-exiting waveguide spacing of the multi-beam splitter chip is matched with the light-entering waveguide spacing of the silicon optical chip.
6. The optical path system for preventing mode jump of a silicon optical chip according to claim 4, wherein a photodiode chip is arranged in the incidence direction of the transverse magnetic mode optical signal, the center of the photodiode chip is located on the optical path optical axis of the transverse magnetic mode optical signal, the photodiode chip is used for converting the optical signal into an electric signal, and an optical signal intensity monitoring module is arranged on the photodiode chip and is used for monitoring the intensity of the transverse magnetic mode optical signal.
7. The anti-mode jump optical path system for a silicon optical chip of claim 6, comprising: the transverse electric mode optical signal intensity estimation module is used for calculating transverse electric mode optical signal intensity data according to the received transverse magnetic mode optical signal intensity data and transmitting the transverse electric mode optical signal intensity data to the working current control module of the DFB laser;
the working current control module of the DFB laser regulates and controls the working current of the DFB laser according to the intensity of the received transverse electric mode optical signal so as to realize the adjustment of the light intensity of the optical signal emitted by the DFB laser.
8. A method for preventing a mode jump light path of a silicon optical chip, comprising the steps of:
s1, sending out 2MHz square wave scrambling signal data insensitive to temperature;
s2, generating a Dither signal through square wave scrambling signal data of 2MHz, which is insensitive to temperature, and flexibly adjusting the duty ratio of the Dither signal according to the requirement;
s3, controlling the current intensity of the Dither signal to be 1% -5% of the bias current amplitude;
s4, the Dither signal after controlling the current intensity is loaded in the DFB laser so as to prevent the mode jump of the DFB laser.
9. The method for preventing a mode jump optical path of a silicon optical chip according to claim 8, further comprising the steps of:
s5, divergent laser emitted by a Dither signal DFB laser is loaded, the divergent laser is firstly changed into collimated light through a collimating lens, then the collimated light passes through an isolator, and finally the collimated light passes through a polarization beam splitter prism to be divided into two paths, wherein the two paths are a transverse electric mode optical signal and a transverse magnetic mode optical signal;
the polarization beam splitter prism separates and transmits the transverse electric mode optical signals, the transverse electric mode optical signals are converged into an optical input waveguide of the multi-beam splitter chip through the converging lens, 1 path of transverse electric mode optical signals in the multi-beam splitter chip are uniformly divided into multiple paths of transverse electric mode optical signals, and the multiple paths of transverse electric mode optical signals enter the optical input waveguide of the silicon optical chip through the optical output waveguide so as to realize that 1 DFB laser loaded with the Dither signals provides multiple paths of transverse electric mode optical signals;
the transverse magnetic mode optical signals separated and reflected by the polarization beam splitter prism are vertically folded to enter the photodiode chip, the transverse magnetic mode optical signals entering the photodiode chip are converted into electric signals, the intensity of the transverse magnetic mode optical signals is monitored, the intensity of the transverse magnetic mode optical signals is calculated by multiplying the calculated coefficient, and the working current of the DFB laser is regulated according to the intensity of the transverse electric mode optical signals so as to regulate the light intensity of the optical signals of the DFB laser.
10. The method for preventing a mode jump optical path of a silicon optical chip according to claim 9, wherein the step S4 further comprises the steps of:
the DFB laser loaded with the Dither signal is placed on the cold end of the semiconductor refrigerator, a thermistor is arranged at the cold end of the semiconductor refrigerator, the temperature of the DFB laser is calculated by measuring the resistance value of the thermistor, and the current of the semiconductor refrigerator is regulated according to the temperature of the DFB laser so as to regulate the temperature of the DFB laser.
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