CN115987246A - High-isolation surface acoustic wave duplexer and multiplexer - Google Patents
High-isolation surface acoustic wave duplexer and multiplexer Download PDFInfo
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- CN115987246A CN115987246A CN202310052615.8A CN202310052615A CN115987246A CN 115987246 A CN115987246 A CN 115987246A CN 202310052615 A CN202310052615 A CN 202310052615A CN 115987246 A CN115987246 A CN 115987246A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The application relates to a high isolation surface acoustic wave duplexer and multiplexer, and relates to the field of surface acoustic wave devices. According to the high-isolation surface acoustic wave duplexer/high-isolation surface acoustic wave multiplexer, the reflector electrode of the surface acoustic wave ladder filter is electrically connected with the grounding terminal, so that electromagnetic interference is reduced, and the isolation of the surface acoustic wave duplexer/surface acoustic wave multiplexer is improved; in addition, the arrangement that the reflector electrode electrically connected with the grounding terminal is electrically connected with the conductive strip patterns can further reduce electromagnetic interference and improve the isolation of the surface acoustic wave duplexer/surface acoustic wave multiplexer; the isolation of the surface acoustic wave duplexer/surface acoustic wave multiplexer is improved under the condition that the period, the aperture and the number of fingers of a certain resonator in a surface acoustic wave duplexer/surface acoustic wave multiplexer chip are not changed and a surface acoustic wave duplexer/surface acoustic wave multiplexer packaging substrate is not changed.
Description
Technical Field
The application relates to the technical field of surface acoustic wave devices, in particular to a high-isolation surface acoustic wave duplexer and a multiplexer.
Background
The surface acoustic wave device has the characteristics of low cost, small volume, multiple functions and the like, and is widely applied to the fields of radar, communication, navigation, identification and the like.
The most commonly used surface acoustic wave devices in communication of mobile phones include surface acoustic wave filters, surface acoustic wave duplexers, and surface acoustic wave multiplexers. For the surface acoustic wave duplexer and the surface acoustic wave multiplexer, sufficient isolation degree needs to be provided outside the passband so as to avoid the influence of signal crosstalk of different filters on the normal work of other filters.
However, as a common problem in the industry, a surface acoustic wave duplexer and a surface acoustic wave multiplexer that can simply and effectively improve the isolation outside the passband without increasing the passband differential loss and the design complexity is generally lacking at present.
Disclosure of Invention
The utility model aims at providing a high isolation surface acoustic wave duplexer and multiplexer to solve and to be able to make surface acoustic wave duplexer/surface acoustic wave multiplexer's isolation obtain the problem of promoting under the condition that does not change the interdigital transducer cycle, aperture and the finger number of a certain resonator in the surface acoustic wave duplexer/surface acoustic wave multiplexer chip, also change surface acoustic wave duplexer/surface acoustic wave multiplexer packaging substrate.
In order to achieve the purpose, the technical scheme adopted by the application is as follows:
on one hand, the application provides a high-isolation surface acoustic wave duplexer which comprises a piezoelectric substrate, wherein an antenna terminal and two independent terminals which are distributed at intervals are integrated on the piezoelectric substrate, surface acoustic wave filters are integrated between each independent terminal and the antenna terminal, and each surface acoustic wave filter is electrically connected with at least one grounding terminal;
at least one of the surface acoustic wave filters is:
the surface acoustic wave ladder filter consists of at least one surface acoustic wave series arm resonator and at least one surface acoustic wave parallel arm resonator;
the surface acoustic wave series arm resonator and the surface acoustic wave parallel arm resonator both include:
two reflector electrodes integrated on the piezoelectric substrate and an interdigital transducer electrode located between the two reflector electrodes;
at least one of the reflector electrodes of at least one of the SAW ladder filters is electrically connected to at least one of the ground terminals.
In one possible implementation manner, a conductive strip pattern is further integrated on the piezoelectric substrate; at least one of the reflector electrodes electrically connected to the ground terminal is electrically connected to the conductive strip pattern.
In one possible implementation, the line length of the conductive elongated stripe pattern is not less than λ; wherein λ is a maximum period among periods that all the interdigital transducer electrodes in all the surface acoustic wave ladder filters have.
In one possible implementation, the pattern of conductive strips is in the form of straight strips, curved strips, or bent strips.
In one possible implementation, the piezoelectric substrate is a bulk material having piezoelectricity.
In one possible implementation, the piezoelectric substrate is composed of a bulk material having no piezoelectricity and a thin film material having piezoelectricity on the bulk material.
On the other hand, the application provides a high-isolation surface acoustic wave multiplexer, which comprises a piezoelectric substrate, wherein an antenna terminal and at least three independent terminals distributed at intervals are integrated on the piezoelectric substrate, a surface acoustic wave filter is integrated between each independent terminal and the antenna terminal, and each surface acoustic wave filter is electrically connected with at least one grounding terminal;
at least one of the surface acoustic wave filters is:
the surface acoustic wave ladder filter consists of at least one surface acoustic wave series arm resonator and at least one surface acoustic wave parallel arm resonator;
the surface acoustic wave series arm resonator and the surface acoustic wave parallel arm resonator both include:
two reflector electrodes integrated on the piezoelectric substrate and an interdigital transducer electrode located between the two reflector electrodes;
at least one of the reflector electrodes of at least one of the SAW ladder filters is electrically connected to at least one of the ground terminals.
In one possible implementation manner, a conductive strip pattern is further integrated on the piezoelectric substrate; at least one of the reflector electrodes electrically connected to the ground terminal is electrically connected to the conductive strip pattern.
In one possible implementation, the line length of the conductive elongated stripe pattern is not less than λ; wherein λ is a maximum period among periods that all the interdigital transducer electrodes in all the surface acoustic wave ladder filters have.
In one possible implementation, the pattern of conductive strips is in the form of straight strips, curved strips, or bent strips.
In one possible implementation, the piezoelectric substrate is a bulk material having piezoelectricity.
In one possible implementation, the piezoelectric substrate is composed of a bulk material having no piezoelectricity and a thin film material having piezoelectricity on the bulk material.
In another aspect, the present application provides a communication device including a high-isolation surface acoustic wave duplexer as described above or a high-isolation surface acoustic wave multiplexer as described above.
The beneficial effect that technical scheme that this application provided brought includes at least:
the reflector electrode of the acoustic surface wave ladder filter is electrically connected with the grounding terminal, so that the electromagnetic interference is reduced, and the isolation of the acoustic surface wave duplexer/acoustic surface wave multiplexer is improved; in addition, the arrangement that the reflector electrode electrically connected with the grounding terminal is electrically connected with the conductive strip pattern can further reduce electromagnetic interference and improve the isolation of the surface acoustic wave duplexer/surface acoustic wave multiplexer; the isolation of the surface acoustic wave duplexer/surface acoustic wave multiplexer is improved under the condition that the period, the aperture and the number of fingers of a certain resonator in a surface acoustic wave duplexer/surface acoustic wave multiplexer chip are not changed and a surface acoustic wave duplexer/surface acoustic wave multiplexer packaging substrate is not changed.
Drawings
The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiment(s) of the application and together with the description serve to explain the application and not limit the application. In the drawings:
fig. 1 is a schematic circuit diagram illustrating a high-isolation surface acoustic wave duplexer according to an embodiment of the present application;
fig. 2 is a graph showing a comparison of the isolation performance of a high-isolation surface acoustic wave duplexer (solid line) provided in the embodiment of the present application and a conventional surface acoustic wave duplexer (dotted line);
fig. 3 is a schematic circuit diagram illustrating a high-isolation surface acoustic wave duplexer provided in the second embodiment of the present application;
fig. 4 is a graph showing a comparison of the isolation performance of the high-isolation surface acoustic wave duplexer (solid line) provided in the second embodiment of the present application and the isolation performance of the conventional surface acoustic wave duplexer (broken line).
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The present application will be further described with reference to the following drawings and examples.
Example one
Fig. 1 shows a schematic circuit structure diagram of a high-isolation surface acoustic wave duplexer provided in an embodiment of the present application, where the high-isolation surface acoustic wave duplexer 100 includes a piezoelectric substrate 149, and one antenna terminal 121, a first independent terminal 101, and a second independent terminal 102 are integrated on the piezoelectric substrate 149, where the first independent terminal 101 and the second independent terminal 102 are distributed at an interval.
A first saw filter 111 is integrated between the first independent terminal 101 and the antenna terminal 121, and a second saw filter 112 is integrated between the second independent terminal 102 and the antenna terminal 121. The first saw filter 111 is electrically connected with a first ground terminal 131 and a second ground terminal 132, and the second saw filter 112 is electrically connected with a third ground terminal 133 and a fourth ground terminal 134.
Specifically, referring to fig. 1, saw filter one 111 is a saw ladder filter. The surface acoustic wave filter one 111 has a series branch connecting the independent terminal one 101 and the antenna terminal 121, and the series branch connects the surface acoustic wave series arm resonator one 141 and the surface acoustic wave series arm resonator two 142 in series with each other; a surface acoustic wave parallel arm resonator one 145 is arranged in a parallel branch connecting a connection point of the surface acoustic wave series arm resonator one 141 and the surface acoustic wave series arm resonator two 142 with the ground terminal one 131; a second surface acoustic wave parallel arm resonator 146 is disposed in a parallel branch connecting a connection point between the second surface acoustic wave series arm resonator 142 and the first individual terminal 101 and the second ground terminal 132.
The first surface acoustic wave series arm resonator 141 includes a first reflector electrode 141A, a second reflector electrode 141B, and a first interdigital transducer electrode 141C between the first reflector electrode 141A and the second reflector electrode 141B, which are integrated on the piezoelectric substrate 149.
The second surface acoustic wave series arm resonator 142 includes a third reflector electrode 142A, a fourth reflector electrode 142B, and a second interdigital transducer electrode 142C between the third reflector electrode 142A and the fourth reflector electrode 142B, which are integrated on the piezoelectric substrate 149.
The saw arm resonator one 145 includes a reflector electrode five 145A, a reflector electrode six 145B, and an interdigital transducer electrode three 145C between the reflector electrode five 145A and the reflector electrode six 145B, integrated on the piezoelectric substrate 149.
The surface acoustic wave parallel arm resonator two 146 includes a reflector electrode seven 146A, a reflector electrode eight 146B and an interdigital transducer electrode four 146C between the reflector electrode seven 146A and the reflector electrode eight 146B, which are integrated on the piezoelectric substrate 149.
Correspondingly, referring to fig. 1, the second saw filter 112 is also a saw ladder filter. The second saw filter 112 has a series arm connecting the second independent terminal 102 and the antenna terminal 121, and the series arm connects the third saw series arm resonator 143 and the fourth saw series arm resonator 144 in series with each other; a surface acoustic wave parallel arm resonator three 147 is arranged in a parallel arm connecting a connection point of the surface acoustic wave series arm resonator three 143 and the surface acoustic wave series arm resonator four 144 and the ground terminal three 133; a surface acoustic wave parallel arm resonator four 148 is disposed in the parallel branch connecting the connection point of the surface acoustic wave series arm resonator four 144 and the second independent terminal 102 and the ground terminal four 134.
The surface acoustic wave series arm resonator three 143 includes a reflector electrode nine 143A, a reflector electrode ten 143B, and an interdigital transducer electrode five 143C between the reflector electrode nine 143A and the reflector electrode ten 143B, which are integrated on the piezoelectric substrate 149.
The surface acoustic wave series arm resonator four 144 includes a reflector electrode eleven 144A integrated on the piezoelectric substrate 149, a reflector electrode twelve 144B, and an interdigital transducer electrode six 144C located between the reflector electrode eleven 144A and the reflector electrode twelve 144B.
The surface acoustic wave parallel arm resonator three 147 includes a reflector electrode thirteen 147A, a reflector electrode fourteen 147B integrated on the piezoelectric substrate 149, and an interdigital transducer electrode seven 147C located between the reflector electrode thirteen 147A and the reflector electrode fourteen 147B.
The saw parallel arm resonator four 148 includes a reflector electrode fifteen 148A, a reflector electrode sixteen 148B, and an interdigital transducer electrode eight 148C between the reflector electrode fifteen 148A and the reflector electrode sixteen 148B, which are integrated on the piezoelectric substrate 149.
In fig. 1, at least one reflector electrode is electrically connected to at least one ground terminal in the saw filter one 111. In one example, the reflector electrode three 142A is electrically connected to the ground terminal two 132. Similarly, in the second saw filter 112, at least one of the reflector electrodes is electrically connected to at least one of the ground terminals. In one example, reflector electrode fifteen 148A is electrically connected with ground terminal four 134.
Effect verification:
fig. 2 shows a comparison graph of isolation performance between the high-isolation surface acoustic wave duplexer (solid line) and the conventional surface acoustic wave duplexer (dotted line), which shows that, compared with the conventional surface acoustic wave duplexer in which the reflector electrode of the surface acoustic wave ladder filter is not electrically connected to the ground terminal, the high-isolation surface acoustic wave duplexer in the first embodiment of the present invention exhibits better isolation performance without changing the period, the aperture and the number of fingers of the interdigital transducer electrode of the device and without changing the package substrate of the device, so that the isolation of the duplexer is improved by about 3 dB. This is because, when the reflector electrode of the surface acoustic wave ladder filter, particularly the reflector electrode of the surface acoustic wave ladder filter in the vicinity of the antenna terminal 121, is electrically connected to the ground terminal, the influence of electromagnetic interference on the antenna terminal 121 can be reduced, thereby improving the isolation of the duplexer.
Example two
Fig. 3 shows a schematic circuit structure diagram of a high-isolation surface acoustic wave duplexer 200 provided in the second embodiment of the present application, where the structure of the high-isolation surface acoustic wave duplexer 200 provided in this embodiment is basically the same as that of the first embodiment, except that a conductive strip pattern 251 is further integrated on the piezoelectric substrate 149 of the high-isolation surface acoustic wave duplexer 200 provided in this embodiment.
It is noted that the reflector electrode three 142A electrically connected to the ground terminal two 132 is electrically connected to the conductive strip pattern 251. The line length of the conductive elongated pattern 251 is not less than 10 λ; where λ is the maximum period among the periods that all interdigital transducer electrodes in all the surface acoustic wave ladder filters (here, the first surface acoustic wave filter 211 and the second surface acoustic wave filter 112 in fig. 3) have. Optionally, the conductive strip pattern 251 is in the form of a straight strip, a bent strip, or a bent strip.
Effect verification:
fig. 4 shows a comparison graph of the isolation performance of the high-isolation surface acoustic wave duplexer (solid line) and the conventional surface acoustic wave duplexer (dotted line), which shows that, compared with the conventional surface acoustic wave duplexer in which the reflector electrode of the surface acoustic wave ladder filter is not electrically connected to the ground terminal, the high-isolation surface acoustic wave duplexer in the second embodiment of the present invention exhibits better isolation performance without changing the period, the aperture and the number of fingers of the interdigital transducer electrode of the device and without changing the package substrate of the device, so that the isolation of the duplexer is improved by about 4 dB. Moreover, the isolation performance of the duplexer of the second embodiment of the present application is slightly better than that of the duplexer of the first embodiment of the present application because the conductive strip pattern 251 is similar to an inductive structure or a planar antenna structure, and the reflector electrode three 142A electrically connected to the ground terminal two 132 is electrically connected to the conductive strip pattern 251, so that the influence of electromagnetic interference on the antenna terminal 121 can be further reduced, and the isolation of the duplexer can be further improved.
It should be noted that in the first and second embodiments, the interdigital transducer electrodes (141C, 142C, 143C, 144C, 145C, 146C, 147C, 148C) and the reflector electrodes (141A, 142A, 143A, 144A, 145A, 146A, 147A, 148A, 141B, 142B, 143B, 144B, 145B, 146B, 147B, 148B) may be made of metals such as aluminum, copper, tungsten, gold, platinum, titanium, silver, chromium, and the like, or may be made of alloys of some metals. Alternatively, the piezoelectric substrate 149 is a bulk material having piezoelectricity, such as a piezoelectric single crystal material of quartz, lithium tantalate, lithium niobate, lithium tetraborate, bismuth germanate, bismuth silicate, langasite series, or the like. Alternatively, the piezoelectric substrate 149 may also be a composite piezoelectric material formed by combining a bulk material having no piezoelectricity and a thin film material having piezoelectricity on the bulk material; the bulk material without piezoelectricity is a common substrate in semiconductor component processing, and includes but is not limited to monocrystalline silicon, polycrystalline silicon, aluminum nitride, glass, silicon carbide, diamond and sapphire; the thin film material with piezoelectricity includes, but is not limited to, a lithium niobate piezoelectric thin film material, a lithium tantalate piezoelectric thin film material, a gallium nitride thin film with c-axis preferred orientation, an aluminum scandium nitride thin film with c-axis preferred orientation, and a zinc oxide thin film with c-axis preferred orientation.
In addition, the application also provides a high-isolation surface acoustic wave multiplexer, which comprises a piezoelectric substrate, wherein an antenna terminal and at least three independent terminals distributed at intervals are integrated on the piezoelectric substrate, for example, an independent terminal I and an independent terminal II … … independent terminal N are integrated on the piezoelectric substrate. A surface acoustic wave filter is integrated between each independent terminal and the antenna terminal, for example, a surface acoustic wave filter one corresponding to the independent terminal one, and a surface acoustic wave filter two … … corresponding to the independent terminal two are surface acoustic wave filters N corresponding to the independent terminal N. Each surface acoustic wave filter is electrically connected with at least one grounding terminal; at least one of the surface acoustic wave filters is: the surface acoustic wave ladder filter consists of at least one surface acoustic wave series arm resonator and at least one surface acoustic wave parallel arm resonator; the surface acoustic wave series arm resonator and the surface acoustic wave parallel arm resonator each include: two reflector electrodes integrated on the piezoelectric substrate and an interdigital transducer electrode located between the two reflector electrodes; at least one reflector electrode of at least one of the SAW ladder filters is electrically connected to at least one ground terminal.
In a preferred embodiment, the piezoelectric substrate further has a pattern of conductive strips integrated thereon; at least one reflector electrode electrically connected to the ground terminal is electrically connected to the conductive strip pattern. The line length of the conductive elongated pattern is not less than 10 lambda; where λ is the largest period among the periods that all the interdigital transducer electrodes in all the saw ladder filters have. Optionally the pattern of conductive strips is in the form of straight strips, curved strips or bent strips.
Alternatively, the piezoelectric substrate is a bulk material having piezoelectricity, such as a piezoelectric lithium tantalate wafer or a piezoelectric lithium niobate wafer.
Alternatively, the piezoelectric substrate is composed of a bulk material having no piezoelectricity and a thin film material having piezoelectricity on the bulk material, such as a piezoelectric lithium niobate thin film on a silicon wafer, a SiO2 thin film on a silicon wafer, and a pressurized lithium tantalate thin film.
It should be noted that, on the basis of the high-isolation surface acoustic wave duplexer, an independent terminal and a surface acoustic wave filter corresponding to the independent terminal are correspondingly added, and the principle is the same, so that a more detailed explanation is not given.
Finally, the application also provides a communication device comprising the high-isolation surface acoustic wave duplexer or the high-isolation surface acoustic wave multiplexer.
In summary, according to the acoustic surface wave ladder filter, the reflector electrode of the acoustic surface wave ladder filter is electrically connected with the grounding terminal, so that electromagnetic interference is reduced, and the isolation of the acoustic surface wave duplexer/acoustic surface wave multiplexer is improved; in addition, the arrangement that the reflector electrode electrically connected with the grounding terminal is electrically connected with the conductive strip patterns can further reduce electromagnetic interference and improve the isolation of the surface acoustic wave duplexer/surface acoustic wave multiplexer; the isolation of the surface acoustic wave duplexer/surface acoustic wave multiplexer is improved under the condition that the period, the aperture and the number of fingers of a certain resonator in a surface acoustic wave duplexer/surface acoustic wave multiplexer chip are not changed and a surface acoustic wave duplexer/surface acoustic wave multiplexer packaging substrate is not changed.
The above is only the preferred embodiment of the present application, and it should be noted that: it will be apparent to those skilled in the art that various modifications and enhancements can be made without departing from the principles of the application, and such modifications and enhancements are intended to be included within the scope of the application.
Claims (9)
1. A high-isolation surface acoustic wave duplexer comprises a piezoelectric substrate and is characterized in that an antenna terminal and two independent terminals distributed at intervals are integrated on the piezoelectric substrate, a surface acoustic wave filter is integrated between each independent terminal and the antenna terminal, and each surface acoustic wave filter is electrically connected with at least one grounding terminal;
at least one of the surface acoustic wave filters is:
the surface acoustic wave ladder filter consists of at least one surface acoustic wave series arm resonator and at least one surface acoustic wave parallel arm resonator;
the surface acoustic wave series arm resonator and the surface acoustic wave parallel arm resonator both include:
two reflector electrodes integrated on the piezoelectric substrate and an interdigital transducer electrode located between the two reflector electrodes;
at least one of the reflector electrodes of at least one of the SAW ladder filters is electrically connected to at least one of the ground terminals.
2. The high-isolation surface acoustic wave duplexer according to claim 1, wherein a pattern of conductive strips is further integrated on the piezoelectric substrate;
at least one of the reflector electrodes electrically connected to the ground terminal is electrically connected to the conductive strip pattern.
3. The high-isolation surface acoustic wave duplexer according to claim 2, wherein the line length of the conductive elongated strip pattern is not less than 10 λ;
wherein λ is a maximum period among periods that all the interdigital transducer electrodes in all the surface acoustic wave ladder filters have.
4. A high-isolation surface acoustic wave duplexer as claimed in claim 2, wherein the pattern of conductive strips is a straight strip, a bent strip or a meandering strip.
5. A high-isolation surface acoustic wave multiplexer comprises a piezoelectric substrate and is characterized in that an antenna terminal and at least three independent terminals distributed at intervals are integrated on the piezoelectric substrate, a surface acoustic wave filter is integrated between each independent terminal and the antenna terminal, and each surface acoustic wave filter is electrically connected with at least one grounding terminal;
at least one of the surface acoustic wave filters is:
the surface acoustic wave ladder filter consists of at least one surface acoustic wave series arm resonator and at least one surface acoustic wave parallel arm resonator;
the surface acoustic wave series arm resonator and the surface acoustic wave parallel arm resonator both include:
two reflector electrodes integrated on the piezoelectric substrate and an interdigital transducer electrode located between the two reflector electrodes;
at least one of the reflector electrodes of at least one of the SAW ladder filters is electrically connected to at least one of the ground terminals.
6. The high isolation surface acoustic wave multiplexer of claim 5, wherein said piezoelectric substrate further has a pattern of conductive strips integrated thereon;
at least one of the reflector electrodes electrically connected to the ground terminal is electrically connected to the conductive strip pattern.
7. The high isolation surface acoustic wave multiplexer of claim 6, wherein a line length of said pattern of conductive strips is not less than 10 λ;
wherein λ is a maximum period among periods that all the interdigital transducer electrodes in all the surface acoustic wave ladder filters have.
8. The high isolation surface acoustic wave multiplexer of claim 6, wherein said pattern of conductive strips is in the form of straight strips, curved strips, or bent strips.
9. A communication device comprising the high-isolation surface acoustic wave duplexer of claim 1 or the high-isolation surface acoustic wave multiplexer of claim 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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