CN115976588A - Electrode preparation method based on micro-area metallization and solar cell - Google Patents

Electrode preparation method based on micro-area metallization and solar cell Download PDF

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CN115976588A
CN115976588A CN202111198158.0A CN202111198158A CN115976588A CN 115976588 A CN115976588 A CN 115976588A CN 202111198158 A CN202111198158 A CN 202111198158A CN 115976588 A CN115976588 A CN 115976588A
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electrode
groove
electroplating
plated
product
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苏晓东
邹帅
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Suzhou University
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Suzhou University
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Abstract

The invention discloses a preparation method of an electrode based on micro-area metallization and a solar cell, wherein the method comprises the following steps: preparing a groove corresponding to the electrode pattern on the template to form a female die; injecting plating solution containing metal ions into the groove of the female die; closely adsorbing the product to be plated with the female die so as to enable the plating solution in the groove to be in contact with the product to be plated; and forming an electrode corresponding to the shape of the groove on the surface of the product to be plated by chemical plating and/or electroplating. The preparation method of the electrode based on micro-area metallization does not need complex mask and graph windowing process, shortens the process flow and reduces the manufacturing cost; compared with the traditional electroplating process, the method can greatly reduce the consumption and consumption of the electroplating solution, thereby greatly reducing the difficulty and cost of waste liquid treatment.

Description

Electrode preparation method based on micro-area metallization and solar cell
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a preparation method of an electrode based on micro-area metallization and a solar cell.
Background
Electrode metallization is one of core preparation processes of solar cells, and the mainstream metallization process at present is to print conductive silver paste on the cells through a screen printing method by using an electrode pattern on a screen plate and to sinter the conductive silver paste. For a solar cell, the cost of a silver electrode is second to the second most cost composition of a silicon wafer, and especially for high-efficiency N-type cell technologies such as TopCon, HJT and the like which have high industrial attention at present, the cost of expensive silver paste accounts for more than 30% of the cost of the cell, and becomes one of important factors limiting the industrial popularization; in addition, the aspect ratio of the silver electrode is limited by the conventional screen printing process, which also hinders the further improvement of the battery efficiency.
In order to further reduce the cost of metallization of solar cells and improve the photoelectric conversion efficiency of solar cells, the preparation of metal electrodes of solar cells by using an electroplating method has been a hot spot of research by technicians in the industry. On the one hand, electroplating can use cheaper metal materials such as: the nickel, copper, tin and the like partially or completely replace silver, so that the cost of the electrode material is greatly reduced; on the other hand, the metal electrode prepared by the electroplating method is finer, the refractive index is lower, and the resistance of the metal wire is smaller, so that the photoelectric conversion efficiency of the battery can be further improved.
The existing electroplating process is not applied to a large scale in the solar cell industry because of a plurality of difficulties. On one hand, the process is more and the technology is complex, such as: the Topcon battery is based on a SiNx medium layer as an electroplating mask, and an electrode patterning windowing step is required; in the HJT cell, metal electrodes are plated on a transparent conductive film, and a mask and an electrode patterning windowing step are required to be separately prepared. On the other hand, the amount of waste liquid is large and difficult to process, which has become the most critical factor for restricting the large-scale application of electroplating technology in the solar cell industry.
Therefore, in order to solve the above technical problems, it is necessary to provide an electrode preparation method based on micro-area metallization and a solar cell.
Disclosure of Invention
In view of the above, the present invention provides a method for preparing an electrode based on micro-area metallization and a solar cell, so as to solve the problems of more processes, complex process, large waste liquid amount and difficult treatment faced by the existing electroplating process.
In order to achieve the above object, an embodiment of the present invention provides the following technical solutions:
a method of preparing an electrode based on micro-area metallization, the method comprising:
preparing a groove corresponding to the electrode pattern on the template to form a female die;
injecting plating solution containing metal ions into the groove of the female die;
closely adsorbing the product to be plated with the female die so as to enable the plating solution in the groove to be in contact with the product to be plated;
and chemically plating and/or electroplating the surface of the product to be plated to form an electrode corresponding to the shape of the groove.
In one embodiment, the template is made of a non-conductive material or a combination of a conductive material and a non-conductive material; preferably, the template is made of one or more of ceramic template, engineering plastic or metal with an insulating layer.
In one embodiment, the electrode pattern is an H-pattern electrode pattern, and includes a plurality of main gate lines distributed in parallel and a plurality of sub-gate lines distributed perpendicular to the main gate lines; the grooves on the template comprise a plurality of main grooves corresponding to the main grid lines and a plurality of auxiliary grooves corresponding to the auxiliary grid lines, and the main grooves are communicated with the auxiliary grooves.
In one embodiment, the number of the main grooves is 2-36, the width is 50 μm-1000 μm, the number of the auxiliary grooves is 90-160, and the width is 10 μm-50 μm;
and/or the depth of the main groove and the auxiliary groove is greater than or equal to 1 μm;
and/or the distance between the adjacent auxiliary grooves is 0.5 mm-1.5 mm.
In one embodiment, the template is provided with a liquid inlet and a liquid outlet which are communicated with the groove from the side wall.
In one embodiment, the template is provided with a plurality of vacuum adsorption holes, and the product to be plated and the female die are tightly adsorbed through vacuum negative pressure.
In one embodiment, the plating solution is an electroless plating solution or a plating solution, and the metal ions in the plating solution include any one or a combination of Ni ions, cu ions, ag ions, or Sn ions.
In one embodiment, the step of forming an electrode corresponding to the shape of the groove on the surface of the product to be plated by electroplating comprises the following steps:
connecting the electroplating solution in the groove with the anode of an external power supply through a metal anode, and connecting a product to be plated with the cathode of the external power supply;
the voltage of the external power supply is 0.1V-10V, and the current is 0.5A/dm 2 ～5A/dm 2 And under the process condition, electroplating on the surface of the product to be plated to form an electrode corresponding to the shape of the groove.
In one embodiment, the method further comprises:
and forming an electrode consisting of a plurality of metal layers on the surface of the product to be plated by chemical plating and/or electroplating.
The technical scheme provided by another embodiment of the invention is as follows:
a solar cell comprises an electrode, wherein the electrode is prepared by the method.
The invention has the following beneficial effects:
the preparation method of the electrode based on micro-area metallization does not need complex mask and graph windowing process, shortens the process flow and reduces the manufacturing cost;
compared with the traditional electroplating process, the method can greatly reduce the consumption and consumption of the electroplating solution, thereby greatly reducing the difficulty and cost of waste liquid treatment.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic flow chart of the method for preparing an electrode based on micro-area metallization according to the present invention;
FIG. 2 is a schematic view of the structure of the female mold of the present invention;
FIG. 3 is a partial schematic view of a female mold of the present invention;
FIG. 4 is a schematic view showing the adsorption of the product to be plated to the female mold in the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the invention discloses a preparation method of an electrode based on micro-area metallization, which comprises the following steps:
1. grooves 12 corresponding to the electrode pattern are prepared on a template 11 to form a negative mold 10 shown in fig. 2 and 3.
The template 11 is made of a non-conductive material or a combination of a conductive material and a non-conductive material. For example, the material for making the template may be one or a combination of a plurality of ceramic templates, engineering plastics, or metals with insulating layers, and the like, and the fine processing technology is adopted to process the grooves 12 on the template, and the fine processing of the grooves belongs to the prior art in the mechanical field, and is not described here again.
The method is used for preparing the electrode on the solar cell, the electrode pattern is an H-pattern electrode pattern, and the electrode pattern comprises a plurality of main grid lines which are distributed in parallel and a plurality of auxiliary grid lines which are distributed perpendicular to the main grid lines; the grooves 12 on the template 11 include a plurality of main grooves 121 corresponding to the main grid lines and a plurality of sub-grooves 122 corresponding to the sub-grid lines, and the main grooves 121 are communicated with the sub-grooves 122.
Preferably, the number of the main grooves 121 is 2 to 36, the width is 50 μm to 1000 μm, the number of the sub grooves 122 is 90 to 160, and the width is 10 μm to 50 μm; the depth of the main groove 121 and the sub-groove 122 is greater than or equal to 1 μm; the distance between adjacent auxiliary grooves 122 is 0.5mm to 1.5mm.
Further, a plurality of vacuum adsorption holes 13 are formed on the template 11 so that the product to be plated is tightly adsorbed with the female die through vacuum negative pressure.
2. And injecting a plating solution containing metal ions into the groove of the female die.
Wherein, the plating solution is an electroless plating solution or a plating solution, and preferably, the metal ions in the plating solution comprise any one or a combination of more of Ni ions, cu ions, ag ions, sn ions and the like.
Referring to fig. 2, the template is provided with a liquid inlet hole 141 and a liquid outlet hole 142 communicating with the groove from the side wall, preferably, the liquid inlet hole 141 has a level higher than that of the liquid outlet hole 142, and in the process of electroless plating or electroplating, electroless plating solution or electroplating solution is in a circulating state, and is injected into the groove through the liquid inlet hole 141 and discharged from the groove through the liquid outlet hole 142.
When chemical plating solution is adopted for chemical plating, the chemical plating solution is filled in the groove, and the surface of a product to be plated forms an electrode corresponding to the shape of the groove through chemical plating.
When the electroplating solution is adopted for electroplating, the electroplating solution is connected with the anode of an external power supply through a metal anode, and the metal anode is a Ni, cu, ag or Sn metal anode corresponding to metal ions in the electroplating solution and is contacted with the electroplating solution in the groove of the template. In addition, the mold plate is formed with mounting holes (not shown) for mounting a lead wire therein to electrically connect the metal anode to a positive electrode of an external power source.
3. And (3) closely adsorbing the product to be plated with the female die so as to enable the plating solution in the groove to be in contact with the product to be plated.
Referring to fig. 4, the product 20 to be plated is placed on the surface of the female mold, and the product 20 to be plated and the female mold 10 are tightly adsorbed by vacuum negative pressure, so that the plating solution contacts the product to be plated only in the electrode pattern region and does not diffuse to other regions.
Further, in the electroplating process, the product to be plated is connected with the negative electrode of the external power supply through the conductive clamp or the conductive brush.
It should be understood that, in the present invention, the sequence of step 2 and step 3 is not limited, and the plating solution may be injected into the groove first, and then the product to be plated is tightly adsorbed to the female mold; or the product to be plated can be closely adsorbed with the female die at first, and then the plating solution is injected into the groove.
4. And forming an electrode corresponding to the shape of the groove on the surface of the product to be plated by chemical plating and/or electroplating.
In the electroplating process, an external power supply is connected, the voltage of the external power supply is controlled to be 0.1V-10V, and the current is controlled to be 0.5A/dm 2 ～5A/dm 2 And electroplating the surface of the product to be plated to form an H-pattern electrode corresponding to the H-pattern electrode pattern.
In the chemical plating process, an external power supply is not needed, and an H-pattern electrode corresponding to the H-pattern electrode pattern can be formed on the surface of a product to be plated only by chemical plating solution.
The electrode can form a single-layer metal electrode on the surface of a product to be plated through a one-time chemical plating or electroplating process, and can also form an electrode consisting of multiple metal layers on the surface of the product to be plated through multiple chemical plating and/or electroplating processes.
The present invention is further illustrated by the following specific examples.
Example 1:
the electrode preparation method in this embodiment is applied to the preparation of front and back electrodes of a Heterojunction (HJT) solar cell, where the heterojunction solar cell includes a substrate, a first amorphous silicon thin film on the front surface of the substrate, a second amorphous silicon thin film on the back surface of the substrate, a first conductive film on the first amorphous silicon thin film, a second conductive film on the second amorphous silicon thin film, a first electrode (front electrode) on the first conductive film, and a second electrode (back electrode) on the second conductive film, and the first conductive film and the second conductive film in this embodiment are described by taking a TCO as an example.
The preparation method of the front first electrode in this embodiment is specifically as follows:
firstly, placing an HJT epitaxial structure (a substrate, an amorphous silicon film and a conductive film) on a female die, injecting electroplating liquid containing Ni ions into grooves (a main groove and an auxiliary groove) of the female die, wherein the shape of the grooves corresponds to an H-pattern electrode pattern;
the electroplating solution is connected with the anode of an external power supply through a Ni anode, and the TCO conducting film of the HJT epitaxial structure is connected with the cathode of the external power supply to be communicated with the outsideAfter the power supply is connected, a Ni seed layer is electroplated in a micro-area, the voltage of the external power supply is controlled to be 0.1V-10V, and the current is controlled to be 0.5A/dm 2 ～5A/dm 2 The electroplating time is 30s, and the thickness of the Ni seed layer is 100 nm-500 nm;
after cleaning, placing the HJT epitaxial structure electroplated with the Ni seed layer on another female die, injecting electroplating solution containing Cu ions into grooves (a main groove and an auxiliary groove) of the female die, wherein the shape of the grooves corresponds to the H-pattern electrode pattern;
the electroplating solution is connected with the anode of an external power supply through a Cu anode, the HJT epitaxial structure is connected with the cathode of the external power supply, and after the external power supply is switched on, the micro-area electroplating of a Cu layer is carried out, the voltage of the external power supply is controlled to be 0.1-10V, and the current is controlled to be 1A/dm 2 ～5A/dm 2 The electroplating time is 300s, and the thickness of the Cu layer is 8-15 μm;
after cleaning, placing the HJT epitaxial structure electroplated with the Cu layer on another female die, injecting electroplating solution containing Sn ions into grooves (a main groove and an auxiliary groove) of the female die, wherein the shape of the groove corresponds to the H-pattern electrode pattern;
the electroplating solution is connected with the anode of an external power supply through a Sn anode, the HJT epitaxial structure is connected with the cathode of the external power supply, and after the external power supply is switched on, the micro-area electroplating of the Sn covering layer is carried out, the voltage of the external power supply is controlled to be 0.1V-10V, and the current is controlled to be 0.5A/dm 2 ～5A/dm 2 The electroplating time is 30s, and the thickness of the Sn covering layer is 100 nm-500 nm;
and cleaning after electroplating, heating and drying, and finally compounding the first electrode by using a Ni seed layer, a Cu layer and an Sn covering layer.
In this embodiment, the preparation method of the back second electrode is the same as that of the front first electrode, and is not repeated here.
Example 2:
the electrode preparation method in this embodiment is applied to the preparation of the front and back electrodes of the Heterojunction (HJT) solar cell, and the structure of the heterojunction solar cell is completely the same as that in embodiment 1, and is not described herein again.
The preparation method of the front first electrode in this embodiment is specifically as follows:
firstly, placing an HJT epitaxial structure (a substrate, an amorphous silicon film and a conductive film) on a female die, injecting electroplating solution containing Ni ions into grooves (a main groove and an auxiliary groove) of the female die, wherein the shape of the grooves corresponds to an H-pattern electrode pattern;
the electroplating solution is connected with the anode of an external power supply through a Ni anode, the TCO conductive film of the HJT epitaxial structure is connected with the cathode of the external power supply, and after the external power supply is connected, the micro-area electroplating of a Ni seed layer is carried out, the voltage of the external power supply is controlled to be 0.1V-10V, and the current is controlled to be 0.5A/dm 2 ～5A/dm 2 The electroplating time is 30s, and the thickness of the Ni seed layer is 100 nm-500 nm;
then pumping the electroplating solution containing Ni ions away from the groove of the female die, cleaning the groove and the deposited micro-area in situ, and injecting the electroplating solution containing Cu ions into the groove of the female die;
placing the HJT epitaxial structure electroplated with the Ni seed layer on a female die, and injecting electroplating liquid containing Cu ions into grooves (a main groove and an auxiliary groove) of the female die;
the electroplating solution is connected with the anode of an external power supply through a Cu anode, the HJT epitaxial structure is connected with the cathode of the external power supply, and after the external power supply is switched on, the micro-area electroplating of a Cu layer is carried out, the voltage of the external power supply is controlled to be 0.1-10V, and the current is controlled to be 1A/dm 2 ～5A/dm 2 The electroplating time is 300s, and the thickness of the Cu layer is 8-15 μm;
then, pumping the electroplating solution containing Cu ions out of the groove of the female die, carrying out in-situ cleaning on the groove and the deposited micro-area, and then injecting the electroplating solution containing Sn ions into the groove of the female die;
placing the HJT epitaxial structure electroplated with the Cu layer on a female die, and injecting electroplating solution containing Sn ions into grooves (a main groove and an auxiliary groove) of the female die;
the electroplating solution is connected with the anode of an external power supply through a Sn anode, the HJT epitaxial structure is connected with the cathode of the external power supply, and after the external power supply is connected, the micro-area electroplating of a Sn covering layer is carried out, the voltage of the external power supply is controlled to be 0.1V-10V, and the current is controlled to be 0.5A/dm 2 ～5A/dm 2 The electroplating time is 30s, and the thickness of the Sn covering layer is 100 nm-500 nm;
and after the electroplating is finished, in-situ cleaning is carried out, heating and drying are carried out, and finally the first electrode is formed by compounding a Ni seed layer, a Cu layer and a Sn covering layer.
In this embodiment, the preparation method of the back second electrode is the same as that of the front first electrode, and is not repeated here.
Example 3:
the electrode preparation method in this embodiment is applied to preparation of a first electrode on the front surface and a second electrode on the back surface of a passivation contact (Topcon) solar cell, wherein the passivation contact solar cell comprises a first passivation layer on the front surface and a second passivation layer on the back surface, and the first passivation layer and the second passivation layer in this embodiment are made of SiNx or SiNx/Al 2 O 3 The description is given for the sake of example.
The preparation method of the front first electrode in this embodiment is specifically as follows:
firstly, completing windowing of an H-pattern electrode pattern on a first passivation layer on the front surface of a Topcon epitaxial structure, then placing the Topcon epitaxial structure on a female die, injecting a chemical plating solution containing Ni ions into grooves (a main groove and a secondary groove) of the female die, wherein the shape of the grooves corresponds to the H-pattern electrode pattern;
depositing a Ni seed layer in an H-pattern electrode pattern area of the Topcon epitaxial structure by chemical plating, wherein the thickness of the Ni seed layer is 50 nm-500 nm;
after cleaning, placing the Topcon epitaxial structure chemically plated with the Ni seed layer on another female die, injecting electroplating solution containing Cu ions into grooves (a main groove and an auxiliary groove) of the female die, wherein the shape of the groove corresponds to the H-pattern electrode pattern;
the electroplating solution is connected with the anode of an external power supply through a Cu anode, the HJT epitaxial structure is connected with the cathode of the external power supply, and after the external power supply is connected, a micro-area electroplating Cu layer is carried out, the voltage of the external power supply is controlled to be 0.1V-10V, and the current is controlled to be 1A/dm 2 ～5A/dm 2 The electroplating time is 300s, and the thickness of the Cu layer is 8-15 μm;
after cleaning, placing the Topcon epitaxial structure electroplated with the Cu layer on another female die, injecting electroplating solution containing Sn ions into grooves (a main groove and an auxiliary groove) of the female die, wherein the shape of the groove corresponds to the H-pattern electrode pattern;
the plating solution passes through Sn anodeThe electrode is connected with the anode of an external power supply, the HJT epitaxial structure is connected with the cathode of the external power supply, the Sn covering layer is electroplated in a micro-area after the external power supply is connected, and the voltage of the external power supply is controlled to be 0.1-10V and the current is controlled to be 0.5A/dm 2 ～5A/dm 2 The electroplating time is 30s, and the thickness of the Sn covering layer is 100 nm-500 nm;
and cleaning after the electroplating is finished, heating and drying, and finally compounding the first electrode by using a Ni seed layer, a Cu layer and a Sn covering layer.
In this embodiment, the preparation method of the back second electrode is the same as that of the front first electrode, and is not repeated here.
Comparative example 1:
the electrode preparation method in this comparative example is applied to the preparation of the front and back electrodes of a Heterojunction (HJT) solar cell, which has the same structure as that of example 1 and will not be described herein again.
The method for preparing the front first electrode in this comparative example is specifically as follows:
firstly, coating a negative photoresist on the surface of the HJT epitaxial structure, wherein the thickness of the photoresist is 12-15 mu m; then, carrying out selective ultraviolet exposure on the mask layer by using a local shading plate, and exposing and developing the H-pattern;
completely immersing the sample with the H-pattern mask in a plating bath containing Ni ion plating solution, connecting the sample with a power supply cathode, and plating a Ni seed layer after the power supply is switched on, wherein the power supply voltage is 0.1-10V, and the current is 0.5A/dm 2 ～5A/dm 2 The electroplating time is 30s, and the thickness of the Ni seed layer is 100-500 nm;
taking out and putting into a rinsing bath for cleaning, then completely immersing the HJT epitaxial structure electroplated with the Ni seed layer into a plating bath containing Cu ion plating solution, and electroplating Cu after switching on a power supply, wherein the power supply voltage is 0.1-10V, and the current is 1A/dm 2 ～5A/dm 2 The electroplating time is 300s, and the thickness of the Cu layer is 8-15 μm;
taking out, washing in water washing tank, immersing the HJT epitaxial structure plated with Cu layer in electroplating bath containing Sn ion electroplating solution, and powering onPlating Sn coating layer, wherein the power voltage is 0.1V-10V and the current is 0.5A/dm 2 ～5A/dm 2 The electroplating time is 30s, and the thickness of the Sn covering layer is 100 nm-500 nm;
and finally, taking out the HJT epitaxial structure, putting the HJT epitaxial structure into a rinsing bath for cleaning, and heating and drying.
For current electroplating technology in the comparative example, the plating bath size is great usually, need dispose more plating solution, and wait to plate the product and need immerse in the plating solution completely, and the surface can take out more plating solution and get into the wash bowl usually when taking out to lead to the waste of a large amount of plating solutions, increased the waste liquid treatment cost and the degree of difficulty simultaneously.
In the embodiments 1 to 3, the method for preparing the electrode by micro-area metallization is adopted, the consumption of the electroplating solution is less, only the area to be plated of the product contacts the electroplating solution, and the waste of the drawing-out after the electroplating of the product is avoided; meanwhile, complex mask and pattern windowing processes are not needed, the process flow is shortened, and the manufacturing cost is reduced.
It should be understood that the electrode preparation method in the above embodiments is described by taking the application to HJT and Topcon solar cells as an example, and in other embodiments, the electrode shape is not limited to the H-pattern electrode pattern in the above embodiments, and may also be an electrode with other shapes, and all the electrode preparations that implement micro-region metallization by using the template + groove structure are within the protection scope of the present invention.
According to the technical scheme, the invention has the following advantages:
the preparation method of the electrode based on micro-area metallization does not need complex mask and graph windowing process, shortens the process flow and reduces the manufacturing cost;
compared with the traditional electroplating process, the method can greatly reduce the consumption and consumption of the electroplating solution, thereby greatly reducing the difficulty and cost of waste liquid treatment.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.

Claims (10)

1. A method for preparing an electrode based on micro-area metallization, the method comprising:
preparing a groove corresponding to the electrode pattern on the template to form a female die;
injecting plating solution containing metal ions into the groove of the female die;
closely adsorbing the product to be plated with the female die so as to enable the plating solution in the groove to be in contact with the product to be plated;
and chemically plating and/or electroplating the surface of the product to be plated to form an electrode corresponding to the shape of the groove.
2. The method for preparing the electrode based on the micro-area metallization, according to the claim 1, characterized in that the template is made of a non-conductive material or a combination of a conductive material and a non-conductive material; preferably, the template is made of one or more of ceramic template, engineering plastic or metal with an insulating layer.
3. The method for preparing an electrode based on micro-region metallization according to claim 1, wherein the electrode pattern is an H-pattern electrode pattern, and comprises a plurality of main grid lines distributed in parallel and a plurality of auxiliary grid lines distributed perpendicular to the main grid lines; the grooves on the template comprise a plurality of main grooves corresponding to the main grid lines and a plurality of auxiliary grooves corresponding to the auxiliary grid lines, and the main grooves are communicated with the auxiliary grooves.
4. The method for preparing an electrode based on micro-area metallization according to claim 3, wherein the number of the main grooves is 2 to 36, the width is 50 μm to 1000 μm, the number of the auxiliary grooves is 90 to 160, and the width is 10 μm to 50 μm;
and/or the depth of the main groove and the auxiliary groove is greater than or equal to 1 μm;
and/or the distance between the adjacent auxiliary grooves is 0.5 mm-1.5 mm.
5. The method of claim 1, wherein the template has liquid inlet and outlet holes extending from the sidewall to the recess.
6. The method for preparing an electrode based on micro-area metallization as claimed in claim 1, wherein a plurality of vacuum adsorption holes are formed on the template, and the product to be plated is tightly adsorbed with the female mold through vacuum negative pressure.
7. The method for preparing an electrode based on micro-region metallization according to claim 1, wherein the plating solution is an electroless plating solution or a plating solution, and the metal ions in the plating solution comprise any one or more of Ni ions, cu ions, ag ions or Sn ions.
8. The method for preparing an electrode based on micro-area metallization according to claim 1, wherein the electrode corresponding to the shape of the groove is formed on the surface of the product to be plated by electroplating, and the method comprises the following specific steps:
connecting the electroplating solution in the groove with the anode of an external power supply through a metal anode, and connecting the product to be plated with the cathode of the external power supply;
is connected externally toThe power supply voltage is 0.1V-10V and the current is 0.5A/dm 2 ～5A/dm 2 And under the process condition, electroplating on the surface of the product to be plated to form an electrode corresponding to the shape of the groove.
9. The method of claim 8, further comprising:
and chemically plating and/or electroplating the surface of the product to be plated to form an electrode consisting of a plurality of metal layers.
10. A solar cell comprising an electrode, wherein the electrode is prepared by the method of any one of claims 1 to 9.
CN202111198158.0A 2021-10-14 2021-10-14 Electrode preparation method based on micro-area metallization and solar cell Pending CN115976588A (en)

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