CN115966502A - Manufacturing method of high-temperature ion implantation electrostatic chuck - Google Patents
Manufacturing method of high-temperature ion implantation electrostatic chuck Download PDFInfo
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- CN115966502A CN115966502A CN202310003479.3A CN202310003479A CN115966502A CN 115966502 A CN115966502 A CN 115966502A CN 202310003479 A CN202310003479 A CN 202310003479A CN 115966502 A CN115966502 A CN 115966502A
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the field of chuck manufacturing, in particular to a manufacturing method of a high-temperature ion implantation electrostatic chuck. The high-temperature ion implantation electrostatic chuck adopts a form of combining a plurality of layers of functional components, the main material component of the chuck is alumina, the functional components comprise a heating layer, a heat conduction layer, a heat insulation layer component and a mounting base layer, the heat conduction layer component is formed by compounding crystalline and amorphous inorganic non-metallic materials containing alumina, quartz, feldspar and the like, and the composite material has a thermal expansion coefficient similar to that of each component layer of the electrostatic chuck, so that the defect of the existing electrostatic chuck caused by uneven thermal expansion coefficient is overcome.
Description
Technical Field
The invention relates to the field of chuck manufacturing, in particular to a manufacturing method of a high-temperature ion implantation electrostatic chuck.
Background
Ion implanters are one of the major tools in semiconductor wafer fabrication. The ion beam formed by the ion source bombards the specific area of the wafer at a certain angle, changes the electrical characteristics of the characteristic area of the wafer to make the wafer present specific functions, and finally turns the wafer into a complex circuit through other complex and harsh processes.
In a typical ion implantation process, an electrostatic chuck main clamps a wafer to realize inclination of a certain angle, and prevents the wafer from being tilted and falling due to temperature rise in the wafer while an ion beam bombards a specific doping region of the wafer, and meanwhile, the temperature control of the wafer in a process is realized by matching with other auxiliary devices or processes.
Typical silicon process ion implanters typically employ both ambient and low temperature ion implantation, such as ceramic electrostatic chucks, polymer electrostatic chucks, silicone rubber electrostatic chucks, and the like, to achieve ideal clamping of the silicon wafer during ion beam implantation. In some embodiments, a ceramic electrostatic chuck is most suitable for ion implantation processes involving an assist gas such as helium. In other embodiments, the polymer electrostatic chuck, the silicone rubber electrostatic chuck, is suitable for ion implantation processes without the participation of an assist gas.
Conventional electrostatic chucks are comprised of at least three or more layers of components. The first component or process layer in contact with the wafer is made of a relatively dielectric, normally high dielectric insulating material or a compound material with semiconducting properties in a known manner, and the first component layer must provide a stable, safe and reliable electrostatic field after application of a relatively high voltage. In the coulomb mechanics model electrostatic chuck embodiment, the dielectric material of the first layer component is preferably an organic or inorganic substance with a high dielectric constant, such as a polymer, alumina, silicone rubber, yttria, and in this embodiment, the dielectric material must have a low electron transport capability and not short circuit when a high voltage is applied. In the electrostatic chuck embodiment of the tess thermal back force model, the first component layer is typically formed by high temperature sintering using alumina as the host material and doped with suitable titania or aluminum nitride as the host material and doped with suitable titania to form a structural layer having a bulk resistivity in a range (typically 109 to 1013) and semiconductor properties. In other embodiments of the electrostatic chuck based on the thermal back force model, the epoxy resin may be used as a main body to be doped with a conductive material having oxidation resistance, and a structural layer having a certain bulk resistivity range (usually 109 to 1013) and semiconductor characteristics may be prepared by chemical reaction curing or thermal forming.
The second component layer or adhesive layer is a relatively high coefficient of thermal conductivity, low coefficient of expansion adhesive layer, in this embodiment the adhesive layer of the first and third component layers, with one or more hybrid materials such as epoxy or acrylic, within acceptable temperature ranges.
In this embodiment, the third component layer or heater layer is a heater unit made of alumina or aluminum nitride ceramic, which must provide a sufficient heat source for a particular temperature ion implantation process. The alumina or aluminum nitride heater fabrication is well known to those of ordinary skill in the art and is therefore not described with respect to the heater generating the heat source. In this embodiment, heat generated by the heating layer is transferred in a heat transfer manner through the second component layer to the upper wafer of the first component layer. In another embodiment, no external thermal drive is required for the ion process, and therefore the third component layer or thermal barrier layer is a metal alloy with good thermal conductivity, preferably a 6061 series aluminum alloy, to maintain the overall temperature of the electrostatic chuck at an acceptable temperature to protect the safety of the connection components, in this embodiment, as will be described in more detail below with respect to the thermal barrier layer or thermal barrier layer.
In connection with the above embodiment, the fourth component layer or the metal mounting base is preferably made of a series of aluminum alloys with good thermal conductivity to protect the safety of the components attached to the layer, and the overall temperature of the electrostatic chuck is maintained at an acceptable temperature. Generally, the layer structure of the fourth component is formed by machining a plurality of aluminum alloy parts on the top layer, and then is assisted by one or more of a brazing process, friction stir welding and ion beam welding to finish the inner heat dissipation water channel and the auxiliary gas channel of the layer. In this embodiment, the fourth component layer and the third component layer are bonded by the second component layer, and an adhesive layer with a higher thermal coefficient and a low expansion coefficient is selected.
Although the combination structure in the above embodiments is already commonly used in ion implantation, there still exist many disadvantages. First, the design of the assembly in this embodiment is intended to achieve the ion implantation process with normal temperature, low temperature ion or lower heating requirements for the silicon wafer, typically within 250 ℃. However, in the third generation semiconductor compound ion implantation process, a higher temperature is required to successfully realize the implantation process, particularly, in the silicon carbide ion implantation process, the wafer needs to be heated to more than 500 ℃, and the use temperature of the prepared organic adhesive such as epoxy resin is within 200 ℃, which cannot bear the temperature required in the compound semiconductor ion implantation process. In addition, the thermal expansion coefficient of alumina at 20 ℃ is about 6.3, that of aluminum alloy is about 23.2, and that of epoxy resin is about 45. In addition, the thermal expansion coefficient of the epoxy resin increased from 45 to 63 and the thermal expansion coefficient of the alumina increased from 6.3 to 9.7 in the range of 200 ℃. The expansion rate of the aluminum alloy is 3 times that of aluminum oxide and 1.5 times that of epoxy resin. To meet the temperature time required for the first component layer of the electrostatic chuck, the third component layer needs to provide a higher heating temperature. Therefore, various problems arise in the combination of the component layers due to temperature changes during heating of the electrostatic chuck.
In the above embodiments, the electrostatic chuck components are assembled by using an adhesive such as epoxy resin at normal temperature and normal pressure, and the materials of the components have stable thermal expansion coefficients and physical structures at the temperature assembly. The third component layer heater temperature rises, the thermally conductive adhesive layer epoxy between the third and fourth component layers, and the fourth component layer all expand at different rates of thermal expansion. The aluminum alloy of the fourth component layer 130 has a greater expansion rate than the aluminum oxide of the third component layer, which has a greater expansion rate than the thermally conductive bond coat epoxy. Under the interaction force of the thermal expansion of the third component layer and the fourth component layer, the thermal conductive adhesive layer epoxy resin can be caused to break, and under the condition of repeated temperature rise and temperature drop, the thermal conductive adhesive layer epoxy resin can also be accelerated to age until the adhesive property is lost. In this embodiment, the second component layer epoxy resin also suffers from the above problem of losing adhesive performance due to uneven contact surface stress.
For the third generation of compound high temperature ion implantation technology, the electrostatic chuck needs to satisfy the capability of continuous working in the extreme high temperature environment and can provide stable high temperature for the compound wafer ion implantation process.
Therefore, in order to comply with the advanced development of the high temperature ion implantation technology of the compound, an electrostatic chuck and heater assembly structure having high tolerance to temperature difference and high temperature heating function is necessary.
Disclosure of Invention
The present invention is directed to a method for manufacturing a high temperature ion implantation electrostatic chuck, which solves the above problems of the related art. In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a high temperature ion implantation electrostatic chuck, includes the wafer, the bottom fixedly connected with high temperature electrostatic chuck and the heater assembly of wafer, the axle center of wafer and the axle center of high temperature electrostatic chuck and heater assembly are in same vertical line setting.
Preferably, the high-temperature electrostatic chuck and heater assembly comprises a first component layer and a composite thermal insulation layer, the top end of the first component layer is fixedly connected with the bottom end of the wafer, a ceramic heating layer is bonded to the bottom end of the first component layer, two groups of bearing support columns are fixedly connected to the bottom end of the ceramic heating layer, the two groups of bearing support columns are symmetrically arranged about the axis of the ceramic heating layer, the inner wall of the composite thermal insulation layer is fixedly sleeved with the outer surface of the bearing support column, and an installation base is horizontally arranged below the composite thermal insulation layer;
the bottom end of the first component layer is provided with an inwards concave mounting groove.
Preferably, first part layer is including insulating glaze layer and bonding glaze layer, the bottom on insulating glaze layer is fixed the setting with the top on first part layer, insulating glaze layer and wafer are the level setting, the outer wall on bonding glaze layer and the mounting groove inner wall fixed connection of first part layer bottom, bonding glaze layer is located between first part layer and the ceramic heating layer.
Preferably, the ceramic heating layer comprises a heating layer mounting surface, the side wall of the heating layer mounting surface is fixedly connected with the side wall of the ceramic heating layer, and the side wall of the heating layer mounting surface is fixedly connected with an alumina temperature sensor through a bolt.
Preferably, the installation base includes output channel, output channel's outer wall is the cover with the inner wall of installation base and is established, output channel's outer wall and output channel's inner wall are close-fitting.
Preferably, the main component of the first component layer is alumina, and the outer surface of the first component layer is provided with a conducting circuit formed by machining.
A method for manufacturing a high-temperature ion implantation electrostatic chuck is characterized in that: the method comprises the following steps:
s1, firstly, manufacturing an adsorption layer, wherein the dielectric layer generally uses an insulating material with a high relative dielectric constant and an insulator and conductive mixed semiconductor material, wherein the internal electrode material is preferably selected from aluminum, copper, tungsten, molybdenum and the like or other conductive materials, and then the heating layer is manufactured by injecting alumina and aluminum nitride;
s2, in order to increase the combination effect of the functional components, the electrostatic chuck, the alumina adsorption layer, the alumina heating layer and the metal heat dissipation base are combined together by using epoxy resin or silicone rubber, so that the electrostatic chuck with the heating structure has the working temperature within 200 ℃;
s3, mixing alumina, quartz, feldspar and borax to form a glaze, wherein the content of the alumina is not lower than 75%, sintering the glaze to enable the glaze to have the characteristic of similar thermal expansion coefficient to that of the alumina adsorption layer and the alumina heating layer, and bonding the alumina adsorption layer and the alumina heating layer together through a bonding agent formed by sintering the glaze;
s4, mixing alumina, quartz, feldspar and borax according to a certain proportion to form glaze slurry, then forming a glaze layer with the thickness not less than 0.1mm on the electrode surface of the first component layer in a coating, silk-screen printing, soaking and other modes, then placing the first component layer coated with the raw glaze layer into a vacuum or reducing atmosphere sintering furnace, and forming an insulating glaze layer with the thermal expansion coefficient close to that of the alumina through a series of sintering processes;
s5, sintering and molding the first component layer of the alumina on the insulating glaze layer 311 at the top layer, then machining a groove at the back, embedding the ceramic heating layer to the groove, applying glaze on the contact surface for filling, then placing the first component layer and the ceramic heating layer into a vacuum or reducing atmosphere sintering furnace, forming a bonding glaze layer with a thermal expansion coefficient close to that of the alumina through a series of sintering processes, wherein the preferable sintering temperature of the bonding glaze layer is about 1180-1250 ℃, bonding the alumina temperature sensor to the ceramic heating layer by using low-temperature glaze with a sintering temperature of 780-880 ℃ after finishing the first component layer and the ceramic heating layer, then placing the whole component into the vacuum or reducing atmosphere sintering furnace, and forming a low-temperature bonding glaze layer with a thermal expansion coefficient close to that of the alumina through a series of sintering processes;
and S6, fixing the output pipeline in the mounting base by one or more of a brazing process, friction stir welding and ion beam welding, and finally bonding the wafer, the assembled first component layer, the ceramic heating layer, the composite heat insulation layer and the mounting base in sequence.
Compared with the prior art, the invention has the beneficial effects that:
the assembly structure adopts a form of combining a plurality of layers of functional components, the main material component of the assembly structure is alumina, the functional components comprise a heating layer, a heat conduction layer, a heat insulation layer component and a mounting base layer, the heat conduction layer component is compounded by crystalline and amorphous inorganic non-metallic materials containing alumina, quartz, feldspar and the like, and the composite material has a thermal expansion coefficient close to that of each component layer of the electrostatic chuck, so that the defect of the existing electrostatic chuck caused by uneven thermal expansion coefficient is overcome.
In the invention, the heat conduction layer composite material layer is also called as a glaze layer, and the components of the glaze layer are inorganic non-metal mixtures such as alumina, quartz and feldspar. Since the main component of the modified glaze layer is alumina, the modified glaze layer not only has the characteristics of alumina ceramics, but also has a molding method similar to the alumina ceramics method. The combination of each key functional part of the electrostatic chuck is carried out by using glaze with the similar thermal expansion coefficient with alumina ceramics, so that the electrostatic chuck can better resist the high-temperature condition required by the high-temperature ion implantation of compounds.
Drawings
FIG. 1 is a schematic view of the main assembly of the present invention;
FIG. 2 is a schematic rear view of the assembly of the present invention;
fig. 3 is an enlarged schematic view of a portion a in fig. 2 according to the present invention.
In the figure: 1. a wafer; 100. a high temperature electrostatic chuck and heater assembly; 110. a first component layer; 111. an insulating glaze layer; 112. a bonding glaze layer; 120. a ceramic heating layer; 121. a heating layer mounting surface; 130. a load bearing strut; 140. a composite heat insulation layer; 150. installing a base; 151. and (6) an output channel.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a worker skilled in the art based on the embodiments of the present invention without making creative efforts, shall fall within the protection scope of the present invention.
Referring to fig. 1 to 3, the present invention provides a technical solution: the utility model provides a high temperature ion implantation electrostatic chuck, includes wafer 1, and the bottom fixedly connected with high temperature electrostatic chuck of wafer 1 and heater assembly 100, the axle center of wafer 1 and the axle center of high temperature electrostatic chuck and heater assembly 100 are in same vertical line setting.
In this embodiment, as shown in fig. 1, fig. 2 and fig. 3, the high temperature electrostatic chuck and heater assembly 100 includes a first component layer 110 and a composite heat insulation layer 140, a top end of the first component layer 110 is fixedly connected to a bottom end of the wafer 1, a ceramic heating layer 120 is bonded to the bottom end of the first component layer 110, two groups of bearing pillars 130 are fixedly connected to a bottom end of the ceramic heating layer 120, the two groups of bearing pillars 130 are symmetrically arranged about an axis of the ceramic heating layer 120, an inner wall of the composite heat insulation layer 140 is fixedly sleeved with an outer surface of the bearing pillars 130, and an installation base 150 is horizontally disposed below the composite heat insulation layer 140;
the mounting groove of indent is seted up to the bottom on first part layer 110, through the setting of first part layer and ceramic heating layer, is convenient for carry out the temperature transmission, makes things convenient for the use of device.
In this embodiment, as shown in fig. 1, 2 and 3, the first component layer 110 includes an insulating glaze layer 111 and a bonding glaze layer 112, a bottom end of the insulating glaze layer 111 is fixedly disposed on a top end of the first component layer 110, the insulating glaze layer 111 is horizontally disposed on the wafer 1, an outer wall of the bonding glaze layer 112 is fixedly connected to an inner wall of the mounting groove at the bottom end of the first component layer 110, the bonding glaze layer 112 is located between the first component layer 110 and the ceramic heating layer 120, a fixing structure between the mounting groove inside the first component layer 110 and the ceramic heating layer 120 is increased by the bonding glaze layer 112, and a gap between the mounting groove and the ceramic heating layer 120 can be filled.
In this embodiment, as shown in fig. 1, fig. 2 and fig. 3, the ceramic heating layer 120 includes a heating layer mounting surface 121, a side wall of the heating layer mounting surface 121 is fixedly connected to a side wall of the ceramic heating layer 120, and an alumina temperature sensor is fixedly connected to the side wall of the heating layer mounting surface 121 through a bolt, so that the current state of the ceramic heating layer 120 is monitored through the alumina temperature sensor, and normal use of the device is facilitated.
In this embodiment, as shown in fig. 1, fig. 2 and fig. 3, the mounting base 150 includes an output channel 151, an outer wall of the output channel 151 is sleeved on an inner wall of the mounting base 150, an outer wall of the output channel 151 is precisely attached to the inner wall of the output channel 151, and through the arrangement of the output channel 151, gas or liquid flows through an output pipeline, so as to facilitate subsequent operations such as heat dissipation, and facilitate the use of the device.
In this embodiment, as shown in fig. 1, fig. 2 and fig. 3, the main component of the first component layer 110 is alumina, and the outer surface of the first component layer 110 has a conductive circuit formed by mechanical processing, so that the electrostatic chuck is more resistant to the high temperature condition required by the high temperature ion implantation of the compound through the arrangement of the alumina.
In this embodiment, as shown in fig. 1 to 3, a method for manufacturing a high temperature ion implantation electrostatic chuck is characterized in that: the method comprises the following steps:
s1, firstly, manufacturing an adsorption layer, wherein the dielectric layer generally uses an insulating material with a high relative dielectric constant and an insulator and conductive mixed semiconductor material, wherein the internal electrode material is preferably selected from aluminum, copper, tungsten, molybdenum and the like or other conductive materials, and then the heating layer is manufactured by injecting alumina and aluminum nitride;
s2, in order to increase the combination effect of the functional components, the electrostatic chuck, the alumina adsorption layer, the alumina heating layer and the metal heat dissipation base are combined together by using epoxy resin or silicone rubber, so that the electrostatic chuck with the heating structure has the working temperature within 200 ℃;
s3, mixing alumina, quartz, feldspar and borax to form a glaze, wherein the content of the alumina is not lower than 75%, sintering the glaze to enable the glaze to have the characteristic of similar thermal expansion coefficient to that of the alumina adsorption layer and the alumina heating layer, and bonding the alumina adsorption layer and the alumina heating layer together through a bonding agent formed by sintering the glaze;
s4, mixing alumina, quartz, feldspar and borax according to a certain proportion to form glaze slurry, then forming a glaze layer with the thickness not less than 0.1mm on the electrode surface of the first component layer 110 in a coating, silk-screen printing, soaking and other modes, then placing the first component layer 110 coated with the raw glaze layer into a vacuum or reducing atmosphere sintering furnace, and forming an insulating glaze layer 111 with the thermal expansion coefficient close to that of the alumina through a series of sintering processes;
s5, after the first component layer 110 of alumina is sintered and molded on the insulating glaze layer 111311 of the top layer, the back of the first component layer is machined to form a groove, the ceramic heating layer 120 is embedded to the groove, and the contact surface is filled with glazing materials.
Placing the first component layer 110 and the ceramic heating layer 120 into a vacuum or reducing atmosphere sintering furnace, forming a bonding glaze layer 112 with a thermal expansion coefficient close to that of alumina through a series of sintering processes, wherein the preferable sintering temperature of the bonding glaze layer 112 is about 1180-1250 ℃, bonding the alumina temperature sensor to the ceramic heating layer 120 by using a low-temperature glaze with a sintering temperature of 780-880 ℃ after the first component layer 110 and the ceramic heating layer 120 are finished, then placing the whole component into the vacuum or reducing atmosphere sintering furnace, and forming a low-temperature bonding glaze layer 112 with a thermal expansion coefficient close to that of alumina through a series of sintering processes;
s6, fixing the output pipeline inside the mounting base 150 by one or more of the processes of brazing, friction stir welding and ion beam welding, and finally bonding the wafer 1, the assembled first component layer 110, the ceramic heating layer 120, the composite heat-insulating layer 140 and the mounting base 150 in sequence.
The foregoing shows and describes the general principles, principal features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the preferred embodiments of the present invention are described in the above embodiments and the description, and are not intended to limit the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (7)
1. A high temperature ion implantation electrostatic chuck comprising a wafer (1), characterized in that: the bottom end of the wafer (1) is fixedly connected with a high-temperature electrostatic chuck and heater assembly (100), and the axis of the wafer (1) and the axis of the high-temperature electrostatic chuck and heater assembly (100) are arranged on the same vertical line.
2. A high temperature ion implantation electrostatic chuck as recited in claim 1, wherein: the high-temperature electrostatic chuck and heater assembly (100) comprises a first component layer (110) and a composite heat insulation layer (140), the top end of the first component layer (110) is fixedly connected with the bottom end of a wafer (1), a ceramic heating layer (120) is bonded to the bottom end of the first component layer (110), the bottom end of the ceramic heating layer (120) is fixedly connected with bearing support columns (130), the bearing support columns (130) are symmetrically arranged in two groups about the axis of the ceramic heating layer (120), the inner wall of the composite heat insulation layer (140) is fixedly sleeved with the outer surface of the bearing support column (130), and a mounting base (150) is horizontally arranged below the composite heat insulation layer (140);
the bottom end of the first component layer (110) is provided with an inwards concave mounting groove.
3. A high temperature ion implantation electrostatic chuck as recited in claim 2, wherein: first part layer (110) is including insulating glaze layer (111) and bonding glaze layer (112), the bottom of insulating glaze layer (111) is fixed the setting with the top of first part layer (110), insulating glaze layer (111) is the level setting with wafer (1), the outer wall of bonding glaze layer (112) and the mounting groove inner wall fixed connection of first part layer (110) bottom, bonding glaze layer (112) are located between first part layer (110) and ceramic heating layer (120).
4. A high temperature ion implantation electrostatic chuck as recited in claim 2, wherein: the ceramic heating layer (120) comprises a heating layer mounting surface (121), the side wall of the heating layer mounting surface (121) is fixedly connected with the side wall of the ceramic heating layer (120), and the side wall of the heating layer mounting surface (121) is fixedly connected with an alumina temperature sensor through a bolt.
5. A high temperature ion implantation electrostatic chuck as recited in claim 2, wherein: installation base (150) include output channel (151), the outer wall of output channel (151) is the cover with the inner wall of installation base (150) and sets up, the outer wall of output channel (151) is laminated with the inner wall of output channel (151) is accurate.
6. A high temperature ion implantation electrostatic chuck as recited in claim 2, wherein: the main component of the first component layer (110) is alumina, and the outer surface of the first component layer (110) is provided with a conducting circuit formed by machining.
7. A method of manufacturing a high temperature ion implantation electrostatic chuck as defined in claim 1, wherein: the method comprises the following steps:
s1, firstly, manufacturing an adsorption layer, wherein the dielectric layer generally uses an insulating material with a high relative dielectric constant and an insulator and conductive mixed semiconductor material, wherein the internal electrode material is preferably selected from aluminum, copper, tungsten, molybdenum and the like or other conductive materials, and then the heating layer is manufactured by injecting alumina and aluminum nitride;
s2, in order to increase the combination effect of the functional components, the electrostatic chuck, the alumina adsorption layer, the alumina heating layer and the metal heat dissipation base are combined together by using epoxy resin or silicone rubber, so that the electrostatic chuck with the heating structure has the working temperature within 200 ℃;
s3, mixing alumina, quartz, feldspar and borax to form a glaze, wherein the content of the alumina is not lower than 75%, sintering the glaze to enable the glaze to have the characteristic of similar thermal expansion coefficient to that of the alumina adsorption layer and the alumina heating layer, and bonding the alumina adsorption layer and the alumina heating layer together through a bonding agent formed by sintering the glaze;
and S4, mixing the alumina, the quartz, the feldspar and the borax according to a certain proportion to form glaze slurry, and then coating, silk-screening, soaking and the like to form a glaze layer with the thickness of not less than 0.1mm on the electrode group surface of the first component layer (110). Then, the first component layer (110) coated with the raw glaze layer is placed in a vacuum or reducing atmosphere sintering furnace, and an insulating glaze layer (111) with the thermal expansion coefficient close to that of alumina is formed after a series of sintering processes;
s5, sintering and forming the first component layer (110) of the aluminum oxide on the insulating glaze layer (111) 311 of the top layer, then machining a groove on the back, embedding the ceramic heating layer (120) to the groove, and filling the contact surface with a glaze material. Then, placing the first component layer (110) and the ceramic heating layer (120) into a vacuum or reducing atmosphere sintering furnace, forming a bonding glaze layer (112) with a thermal expansion coefficient close to that of alumina through a series of sintering processes, wherein the preferable sintering temperature of the bonding glaze layer (112) is about 1180-1250 ℃, after the first component layer (110) and the ceramic heating layer (120) are finished, bonding the alumina temperature sensor to the ceramic heating layer (120) by using a low-temperature glaze with a sintering temperature of 780-880 ℃, then placing the whole component into the vacuum or reducing atmosphere sintering furnace, and forming the low-temperature bonding glaze layer (112) with a thermal expansion coefficient close to that of alumina through a series of sintering processes;
s6, fixing the output pipeline inside the mounting base (150) by one or more of a brazing process, friction stir welding and ion beam welding, and finally bonding the wafer (1), the assembled first component layer (110), the ceramic heating layer (120), the composite heat insulation layer (140) and the mounting base (150) in sequence.
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| CN112582330A (en) * | 2021-02-22 | 2021-03-30 | 北京中硅泰克精密技术有限公司 | Semiconductor processing equipment and electrostatic chuck assembly thereof |
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| US20020075624A1 (en) * | 1999-05-07 | 2002-06-20 | Applied Materials, Inc. | Electrostatic chuck bonded to base with a bond layer and method |
| CN102105976A (en) * | 2008-06-05 | 2011-06-22 | 瓦里安半导体设备公司 | Improved multilayer electrostatic chuck wafer platen |
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